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Hu J, Li J, Lu G, Zhang D, Cai Q, Wang X, Fang Z, Zhang H, Long Z, Pan J, Dai X, Ye Z, He H. Monoammonium Modified Dion-Jacobson Quasi-2D Perovskite for High Efficiency Pure-Blue Light Emitting Diodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402786. [PMID: 38966898 DOI: 10.1002/smll.202402786] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2024] [Revised: 06/27/2024] [Indexed: 07/06/2024]
Abstract
Quasi-2D perovskites exhibit impressive optoelectronic properties and hold significant promise for future light-emitting devices. However, the efficiency of perovskite light-emitting diodes (PeLEDs) is seriously limited by defect-induced nonradiative recombination and imbalanced charge injection. Here, the defect states are passivated and charge injection balance is effectively improved by introducing the additive cyclohexanemethylammonium (CHMA) to bromide-based Dion-Jacobson (D-J) structure quasi-2D perovskite emission layer. CHMA participates in the crystallization of perovskite, leading to high quality film composed of compact and well-contacted grains with enhanced hole transportation and less defects. As a result, the corresponding PeLEDs exhibit stable pure blue emission at 466 nm with a maximum external quantum efficiency (EQE) of 9.22%. According to current knowledge, this represents the highest EQE reported for pure-blue PeLEDs based on quasi-2D bromide perovskite thin films. These findings underscore the potential of quasi-2D perovskites for advanced light-emitting devices and pave the way for further advancements in PeLEDs.
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Affiliation(s)
- Jiazheng Hu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Jing Li
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou, 310014, China
| | - Guochao Lu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Dingshuo Zhang
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Qiuting Cai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Xinyang Wang
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Zhishan Fang
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Haoran Zhang
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Zaishang Long
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Jun Pan
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou, 310014, China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi, 030000, China
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi, 030000, China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi, 030000, China
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Zhuang D, Wang Y, Cai Q, Zhai L, Huang H, Yang G, Yang Y, Zhang L, Zou C. Restraint of Nonradiative Recombination via Modulation of n-Phase Distribution through Interfacial Lithium Salt Insertion for High-Performance Pure-Blue Perovskite LEDs. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31274-31282. [PMID: 38842415 DOI: 10.1021/acsami.4c03752] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Quasi-two-dimensional perovskite has been widely used in blue perovskite light-emitting diodes. However, the performance of these devices is still hampered by random phase distribution, nonradiative recombination, and imbalanced carrier transport. In this work, an effective strategy is proposed to mitigate these limitations by inserting lithium salts at the interfaces between the hole transport layer (HTL) and the perovskite layer. The perovskite film on the inserted Li2CO3 layer exhibits reasonable n-value redistribution, which leads to the repressive nonradiation recombination and enhanced carrier transport. Moreover, the inserted Li2CO3 layer also improves the electrical conductivity of PEDOT:PSS and hinders indium ion diffusion from the PEDOT:PSS layer to the perovskite film, which inhibits exciton quenching and nonradiative recombination loss at the HTL/perovskite interface. Taking advantage of these merits, we have successfully fabricated efficient pure-blue PeLEDs with an external quantum efficiency of 6.2% at 472 nm and a luminance of 726 cd cm-2. The restraint of nonradiative recombination at the interface offers a promising approach for efficient pure-blue PeLEDs.
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Affiliation(s)
- Dicai Zhuang
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325027, China
| | - Yingyu Wang
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325027, China
| | - Qiuting Cai
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Lanlan Zhai
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325027, China
| | - He Huang
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325027, China
| | - Guanghong Yang
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325027, China
| | - Yun Yang
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325027, China
| | - Lijie Zhang
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325027, China
| | - Chao Zou
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325027, China
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Zhao J, Chen F, Jia H, Wang L, Liu P, Luo T, Guan L, Li X, Yin Z, Tang A. Boosting Cu─In─Zn─S-based Quantum-Dot Light-Emitting Diodes Enabled by Engineering Cu─NiO x/PEDOT:PSS Bilayered Hole-Injection Layer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307115. [PMID: 38059744 DOI: 10.1002/smll.202307115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Revised: 11/10/2023] [Indexed: 12/08/2023]
Abstract
The imbalance of charge injection is considered to be a major factor that limits the device performance of cadmium-free quantum-dot light-emitting diodes (QLEDs). In this work, high-performance cadmium-free Cu─In─Zn─S(CIZS)-based QLEDs are designed and fabricated through tailoring interfacial energy level alignment and improving the balance of charge injection. This is achieved by introducing a bilayered hole-injection layer (HIL) of Cu-doped NiOx (Cu─NiOx)/Poly(3,4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT:PSS). High-quality Cu─NiOx film is prepared through a novel and straightforward sol-gel procedure. Multiple experimental characterizations and theoretical calculations show that the incorporation of Cu2+ ions can regulate the energy level structure of NiOx and enhance the hole mobility. The state-of-art CIZS-based QLEDs with Cu─NiOx/PEDOT:PSS bilayered HIL exhibit the maximum external quantum efficiency of 6.04% and half-life time of 48 min, which is 1.3 times and four times of the device with only PEDOT:PSS HIL. The work provides a new pathway for developing high-performance cadmium-free QLEDs.
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Affiliation(s)
- Jinxing Zhao
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Fei Chen
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, 475004, China
| | - Haoran Jia
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Lijin Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Ping Liu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Tao Luo
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Li Guan
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Xu Li
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Zhe Yin
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
| | - Aiwei Tang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing, 100044, China
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Liu J, Wu H, Liu Y, Wang ZG. Colorimetric Sensor Based on the Oxidase-Mimic Supramolecular Catalyst for Selective and Sensitive Biomolecular Detection. ACS APPLIED MATERIALS & INTERFACES 2023; 15:48945-48951. [PMID: 37823579 DOI: 10.1021/acsami.3c09940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
We have engineered a colorimetric sensor capable of selective and sensitive detection of amino acids. This sensor employs a supramolecular copper-dependent oxidase mimic as the probe, stemming from our prior research. The oxidase mimic is constructed through the self-assembly of commercially available guanosine monophosphate (GMP), Fmoc-lysine, and Cu2+. It catalyzes the formation of a red product with a maximum absorbance at 510 nm. The changes in color and absorbance are responsive to both the concentrations and types of amino acids present. This effect is most pronounced in the presence of histidine, with a detection limit (LOD) of 6.4 nM. Furthermore, the catalytic probe can distinguish histidine from histamine and imidazole propionate, as well as 1-methyl-histidine from 3-methyl-histidine, based on their distinct coordination capacities with copper. This underscores the high selectivity of the sensing platform. Both theoretical simulations and experimental results (including UV-vis spectra, fluorescence, and EPR) indicate that the amino acids may engage in copper center coordination, thereby impeding O2 access to copper─a pivotal aspect of the oxidase catalysis. This sensing platform, characteristic of its swift response, simple fabrication, and exceptional sensitivity and selectivity, can also be applied to detect other biological analytes such as nucleotides. It holds potential for use in environmental and biochemical analyses.
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Affiliation(s)
- Junhong Liu
- State Key Laboratory of Organic-Inorganic Composites, Key Lab of Biomedical Materials of Natural Macromolecules (Beijing University of Chemical Technology, Ministry of Education), Beijing Laboratory of Biomedical Materials, College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Haifeng Wu
- State Key Laboratory of Organic-Inorganic Composites, Key Lab of Biomedical Materials of Natural Macromolecules (Beijing University of Chemical Technology, Ministry of Education), Beijing Laboratory of Biomedical Materials, College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yuanxi Liu
- State Key Laboratory of Organic-Inorganic Composites, Key Lab of Biomedical Materials of Natural Macromolecules (Beijing University of Chemical Technology, Ministry of Education), Beijing Laboratory of Biomedical Materials, College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Zhen-Gang Wang
- State Key Laboratory of Organic-Inorganic Composites, Key Lab of Biomedical Materials of Natural Macromolecules (Beijing University of Chemical Technology, Ministry of Education), Beijing Laboratory of Biomedical Materials, College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
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Wang W, Li Y, Duan Y, Qiu M, An H, Peng Z. Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection. MICROMACHINES 2022; 14:mi14010011. [PMID: 36677071 PMCID: PMC9863841 DOI: 10.3390/mi14010011] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Revised: 12/14/2022] [Accepted: 12/19/2022] [Indexed: 06/01/2023]
Abstract
Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is widely used in optoelectronic devices due to its excellent hole current conductivity and suitable work function. However, imbalanced carrier injection in the PEDOT:PSS layer impedes obtaining high-performance perovskite light-emitting diodes (PeLEDs). In this work, a novel poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))diphenylamine)] (TFB) is applied as the hole transport layers (HTLs) to facilitate the hole injection with cascade-like energy alignment between PEDOT:PSS and methylammonium lead tribromide (MAPbBr3) film. Our results indicate that the introduced TFB layer did not affect the surface morphology or lead to any additional surface defects of the perovskite film. Consequently, the optimal PeLEDs with TFB HTLs show a maximum current efficiency and external quantum efficiency (EQE) of 21.26 cd A-1 and 6.68%, respectively. Such EQE is 2.5 times higher than that of the control devices without TFB layers. This work provides a facile and robust route to optimize the device structure and improve the performance of PeLEDs.
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Affiliation(s)
- Weigao Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yiyang Li
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yu Duan
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Mingxia Qiu
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China
| | - Hua An
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Zhengchun Peng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
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Ye F, Yan H, Liu S, Liu B, Zhang Z, Tian M, Zheng T, Lan X, Huang J, Meng C, Xu P, Li G. Interface Engineering with Quaternary Ammonium-Based Ionic Liquids toward Efficient Blue Perovskite Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2022; 14:50393-50400. [PMID: 36282150 DOI: 10.1021/acsami.2c15144] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) have become a hot research topic in recent years and can now achieve an external quantum efficiency (EQE) of over 22% for green and red devices. However, the efficiency of blue PeLEDs, which are essential for display applications, lags far behind their green and red counterparts. The interface of the PeLEDs has a critical influence on the carrier transport and exciton recombination dynamics, and interface engineering is considered to be an effective strategy to improve the device performance. Herein, quaternary ammonium-based ionic liquids serve as an interfacial modification layer to significantly improve the device efficiency and stability. The interaction of quaternary ammonium cations with Pb(Br/Cl)6 octahedra promotes nucleation sites, which significantly improves the morphology of perovskite films and reduces the formation of defects in films. In addition, ion migration is also effectively suppressed in the device. As a result, with tributylmethylammonium bromide (TMAB) used as the interface layer, the EQE of the device is successfully increased from 3.5 to 6.7%, and the operational stability with a half-lifetime (T50) is increased by over 12 times. Our work provides a new class of interface modification materials toward high-performance blue PeLEDs.
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Affiliation(s)
- Fanghao Ye
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Huibo Yan
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Siyang Liu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Baoxing Liu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Zhiqing Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Mengyao Tian
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Ting Zheng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Xi Lan
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Jincheng Huang
- College of Energy and Power Engineering, Changsha University of Science and Technology, Changsha, Hunan 410114, China
| | - Chunfeng Meng
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu 212003, China
| | - Ping Xu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Guijun Li
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
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