1
|
Liu P, Ding EX, Xu Z, Cui X, Du M, Zeng W, Karakassides A, Zhang J, Zhang Q, Ahmed F, Jiang H, Hakonen P, Lipsanen H, Sun Z, Kauppinen EI. Wafer-Scale Fabrication of Wearable All-Carbon Nanotube Photodetector Arrays. ACS NANO 2024; 18:18900-18909. [PMID: 38997111 PMCID: PMC11271656 DOI: 10.1021/acsnano.4c01087] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Revised: 06/15/2024] [Accepted: 06/17/2024] [Indexed: 07/14/2024]
Abstract
With electronic devices evolving toward portable and high-performance wearables, the constraints of complex and wet processing technologies become apparent. This study presents a scalable photolithography/chemical-free method for crafting wearable all-carbon nanotube (CNT) photodetector device arrays. Laser-assisted patterning and dry deposition techniques directly assemble gas-phase CNTs into flexible devices without any lithography or lift-off processes. The resulting wafer-scale all-CNT photodetector arrays showcase excellent uniformity, wearability, environmental stability, and notable broadband photoresponse, boasting a high responsivity of 44 AW-1 and a simultaneous detectivity of 1.9 × 109 Jones. This research provides an efficient, versatile, and scalable strategy for manufacturing wearable all-CNT device arrays, allowing widespread adoption in wearable optoelectronics and multifunctional sensors.
Collapse
Affiliation(s)
- Peng Liu
- Department
of Applied Physics, Aalto University, Espoo FI-00076, Finland
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-00076, Finland
| | - Er-Xiong Ding
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-00076, Finland
| | - Zhenyu Xu
- Department
of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Xiaoqi Cui
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-00076, Finland
| | - Mingde Du
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-00076, Finland
| | - Weijun Zeng
- Department
of Applied Physics, Aalto University, Espoo FI-00076, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | | | - Jin Zhang
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-00076, Finland
| | - Qiang Zhang
- Department
of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Faisal Ahmed
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-00076, Finland
| | - Hua Jiang
- Department
of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Pertti Hakonen
- Department
of Applied Physics, Aalto University, Espoo FI-00076, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Harri Lipsanen
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-00076, Finland
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-00076, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Esko I. Kauppinen
- Department
of Applied Physics, Aalto University, Espoo FI-00076, Finland
| |
Collapse
|
2
|
Xiao Y, Zou G, Huo J, Sun T, Peng J, Li Z, Shen D, Liu L. Local modulation of Au/MoS 2 Schottky barriers using a top ZnO nanowire gate for high-performance photodetection. NANOSCALE HORIZONS 2024; 9:285-294. [PMID: 38063807 DOI: 10.1039/d3nh00448a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
Schottky junctions are commonly used for fabricating heterojunction-based 2D transition metal dichalcogenide (TMD) photodetectors, characteristically offering a wide detection range, high sensitivity and fast response. However, these devices often suffer from reduced detectivity due to the high dark current, making it challenging to discover a simple and efficient universal way to improve the photoelectric performances. Here, we demonstrate a novel approach for integrating ZnO nanowire gates into a MoS2-Au Schottky junction to improve the photoelectric performances of photodetectors by locally controlling the Schottky barrier. This strategy remarkably reduces the dark current level of the device without affecting its photocurrent and the Schottky detectivity can be modified to a maximum detectivity of 1.4 × 1013 Jones with -20 V NG bias. This work provides potential possibilities for tuning the band structure of other materials and optimizing the performance of heterojunction photodetectors.
Collapse
Affiliation(s)
- Yu Xiao
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Guisheng Zou
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Jinpeng Huo
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Tianming Sun
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
- College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, Shanxi Province, China
| | - Jin Peng
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Zehua Li
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Daozhi Shen
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Lei Liu
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| |
Collapse
|
3
|
Oh MJ, Son GC, Kim M, Jeon J, Kim YH, Son M. An Aqueous Process for Preparing Flexible Transparent Electrodes Using Non-Oxidized Graphene/Single-Walled Carbon Nanotube Hybrid Solution. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2249. [PMID: 37570566 PMCID: PMC10421273 DOI: 10.3390/nano13152249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Revised: 08/02/2023] [Accepted: 08/02/2023] [Indexed: 08/13/2023]
Abstract
In this study, we prepared flexible and transparent hybrid electrodes based on an aqueous solution of non-oxidized graphene and single-walled carbon nanotubes. We used a simple halogen intercalation method to obtain high-quality graphene flakes without a redox process and prepared hybrid films using aqueous solutions of graphene, single-walled carbon nanotubes, and sodium dodecyl sulfate surfactant. The hybrid films showed excellent electrode properties, such as an optical transmittance of ≥90%, a sheet resistance of ~3.5 kΩ/sq., a flexibility of up to ε = 3.6% ((R) = 1.4 mm), and a high mechanical stability, even after 103 bending cycles at ε = 2.0% ((R) = 2.5 mm). Using the hybrid electrodes, thin-film transistors (TFTs) were fabricated, which exhibited an electron mobility of ~6.7 cm2 V-1 s-1, a current on-off ratio of ~1.04 × 107, and a subthreshold voltage of ~0.122 V/decade. These electrical properties are comparable with those of TFTs fabricated using Al electrodes. This suggests the possibility of customizing flexible transparent electrodes within a carbon nanomaterial system.
Collapse
Affiliation(s)
- Min Jae Oh
- Artificial Intelligence & Energy Research Center, Korea Photonics Technology Institute (KOPTI), Gwangju 61007, Republic of Korea (J.J.)
| | - Gi-Cheol Son
- School of Materials Science and Engineering, Gwangju Institute of Science & Technology (GIST), Gwangju 61005, Republic of Korea
| | - Minkook Kim
- Artificial Intelligence & Energy Research Center, Korea Photonics Technology Institute (KOPTI), Gwangju 61007, Republic of Korea (J.J.)
| | - Junyoung Jeon
- Artificial Intelligence & Energy Research Center, Korea Photonics Technology Institute (KOPTI), Gwangju 61007, Republic of Korea (J.J.)
| | - Yong Hyun Kim
- Artificial Intelligence & Energy Research Center, Korea Photonics Technology Institute (KOPTI), Gwangju 61007, Republic of Korea (J.J.)
| | - Myungwoo Son
- Artificial Intelligence & Energy Research Center, Korea Photonics Technology Institute (KOPTI), Gwangju 61007, Republic of Korea (J.J.)
| |
Collapse
|
4
|
Fu N, Zhang J, He Y, Lv X, Guo S, Wang X, Zhao B, Chen G, Wang L. High-Sensitivity 2D MoS 2/1D MWCNT Hybrid Dimensional Heterostructure Photodetector. SENSORS (BASEL, SWITZERLAND) 2023; 23:3104. [PMID: 36991815 PMCID: PMC10056868 DOI: 10.3390/s23063104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 03/10/2023] [Accepted: 03/13/2023] [Indexed: 06/19/2023]
Abstract
A photodetector based on a hybrid dimensional heterostructure of laterally aligned multiwall carbon nanotubes (MWCNTs) and multilayered MoS2 was prepared using the micro-nano fixed-point transfer technique. Thanks to the high mobility of carbon nanotubes and the efficient interband absorption of MoS2, broadband detection from visible to near-infrared (520-1060 nm) was achieved. The test results demonstrate that the MWCNT-MoS2 heterostructure-based photodetector device exhibits an exceptional responsivity, detectivity, and external quantum efficiency. Specifically, the device demonstrated a responsivity of 3.67 × 103 A/W (λ = 520 nm, Vds = 1 V) and 718 A/W (λ = 1060 nm, Vds = 1 V). Moreover, the detectivity (D*) of the device was found to be 1.2 × 1010 Jones (λ = 520 nm) and 1.5 × 109 Jones (λ = 1060 nm), respectively. The device also demonstrated external quantum efficiency (EQE) values of approximately 8.77 × 105% (λ = 520 nm) and 8.41 × 104% (λ = 1060 nm). This work achieves visible and infrared detection based on mixed-dimensional heterostructures and provides a new option for optoelectronic devices based on low-dimensional materials.
Collapse
Affiliation(s)
- Nanxin Fu
- School of Materials and Chemistry, the University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Jiazhen Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yuan He
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xuyang Lv
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Shuguang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xingjun Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Bin Zhao
- School of Materials and Chemistry, the University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Gang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Lin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| |
Collapse
|