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Ahmadi M, Atul A, de Graaf S, van der Veer E, Meise A, Tavabi AH, Heggen M, Dunin-Borkowski RE, Ahmadi M, Kooi BJ. Atomically Resolved Phase Coexistence in VO 2 Thin Films. ACS NANO 2024; 18:13496-13505. [PMID: 38752408 PMCID: PMC11140831 DOI: 10.1021/acsnano.3c10745] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 04/22/2024] [Accepted: 05/01/2024] [Indexed: 05/29/2024]
Abstract
Concurrent structural and electronic transformations in VO2 thin films are of 2-fold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real-space atomic structure analysis in which the oxygen atomic columns are also resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. Strain analysis suggests that the presence of the M2 phase is related to local strain gradients near the TiO2/VO2 interface. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) by utilizing atomic-resolution electron microscopy. Our approach can be used to unravel the structural transitions in a wide range of correlated oxides, offering substantial implications for, e.g., optoelectronics and ferroelectrics.
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Affiliation(s)
- Masoud Ahmadi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Atul Atul
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Sytze de Graaf
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Ewout van der Veer
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Ansgar Meise
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Amir Hossein Tavabi
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Marc Heggen
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Rafal E. Dunin-Borkowski
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Majid Ahmadi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
| | - Bart J. Kooi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, 9747 AG Groningen, The Netherlands
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2
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Guo X, Liu X, Zafar Z, Cheng G, Li Y, Nan H, Lin L, Zou J. Effects of oxygen vacancies and interfacial strain on the metal-insulator transition of VO 2 nanobeams. Phys Chem Chem Phys 2024; 26:10737-10745. [PMID: 38516809 DOI: 10.1039/d3cp06040c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
The role of oxygen vacancies and interfacial strain on the metal-insulator transition (MIT) behavior of high-quality VO2 nanobeams (NBs) synthesized on SiO2/Si substrates employing V2O5 as a precursor has been investigated in this research. Selective oxygen vacancies have been generated by argon plasma irradiation. The MIT is progressively suppressed as the duration of plasma processing increases; in addition, the temperature of MIT (TMIT) drops by up to 95 K relative to the pristine VO2 NBs. Incorporating oxygen vacancies into VO2 may increase its electron concentration, which might shift the Fermi levels upward, strengthen the electronic orbital overlap of the V-V chains, and further stabilize the metallic phase at lower temperatures, based on first-principles calculations. Furthermore, in order to evaluate the influence of substrate-induced strain in our situation, the MIT in two distinct types of VO2 NB samples is examined without metal contacts by using the distinctive light scattering characteristics of the metal (M) and insulator (I) phases (i.e., M/I domains) by optical microscopy. It is found that the domain structures in the "clamped" NBs persisted up to ∼453 K, while the "released" NBs (transferred to a new substrate) did not exhibit any domain structures and turned into an entirely M phase with a dark contrast above ∼348 K. When combined with first-principles calculations, the electronic orbital occupancy in the rutile phase contributes to explaining the interfacial strain-induced modulation of MIT. The current findings shed light on how interfacial strain and oxygen vacancies impact MIT behavior. It also suggests several types of control strategies for MIT in VO2 NBs, which are essential for a broader spectrum of VO2 NB applications.
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Affiliation(s)
- Xitao Guo
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Xin Liu
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Zainab Zafar
- Experimental Physics Division, National Centre for Physics, Islamabad 44000, Pakistan
| | - Guiquan Cheng
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Yunhai Li
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China.
| | - Haiyan Nan
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China.
| | - Lianghua Lin
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Jijun Zou
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
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3
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Pellegrino AL, Lo Presti F, Papari GP, Koral C, Andreone A, Malandrino G. Highly Tunable MOCVD Process of Vanadium Dioxide Thin Films: Relationship between Structural/Morphological Features and Electrodynamic Properties. SENSORS (BASEL, SWITZERLAND) 2023; 23:7270. [PMID: 37631806 PMCID: PMC10458005 DOI: 10.3390/s23167270] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 08/11/2023] [Accepted: 08/16/2023] [Indexed: 08/27/2023]
Abstract
The monoclinic structures of vanadium dioxide are widely studied as appealing systems due to a plethora of functional properties in several technological fields. In particular, the possibility to obtain the VO2 material in the form of thin film with a high control of structure and morphology represents a key issue for their use in THz devices and sensors. Herein, a fine control of the crystal habit has been addressed through an in-depth study of the metal organic chemical vapor deposition (MOCVD) synthetic approach. The focus is devoted to the key operative parameters such as deposition temperature inside the reactor in order to stabilize the P21/c or the C2/m monoclinic VO2 structures. Furthermore, the compositional purity, the morphology and the thickness of the VO2 films have been assessed through energy dispersive X-ray (EDX) analyses and field-emission scanning electron microscopy (FE-SEM), respectively. THz time domain spectroscopy is used to validate at very high frequency the functional properties of the as-prepared VO2 films.
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Affiliation(s)
- Anna Lucia Pellegrino
- Dipartimento di Scienze Chimiche, Università di Catania, and INSTM UdR Catania, Viale A. Doria 6, I-95125 Catania, Italy; (A.L.P.); (F.L.P.)
| | - Francesca Lo Presti
- Dipartimento di Scienze Chimiche, Università di Catania, and INSTM UdR Catania, Viale A. Doria 6, I-95125 Catania, Italy; (A.L.P.); (F.L.P.)
| | - Gian Paolo Papari
- Dipartimento di Fisica “E. Pancini”, Università di Napoli “Federico II”, Via Cinthia, I-80126 Napoli, Italy; (G.P.P.); (A.A.)
- Naples Research Unit, Institute for Superconducting and Other Innovative Materials and Devices (SPIN), Consiglio Nazionale delle Ricerche (CNR), Via Cinthia, I-80126 Napoli, Italy
- Naples Division, Istituto Nazionale di Fisica Nucleare (INFN), Via Cinthia, I-80126 Napoli, Italy;
| | - Can Koral
- Naples Division, Istituto Nazionale di Fisica Nucleare (INFN), Via Cinthia, I-80126 Napoli, Italy;
- Department of Science, University of Basilicata, Viale dell’Ateneo Lucano 10, I-85100 Potenza, Italy
| | - Antonello Andreone
- Dipartimento di Fisica “E. Pancini”, Università di Napoli “Federico II”, Via Cinthia, I-80126 Napoli, Italy; (G.P.P.); (A.A.)
- Naples Research Unit, Institute for Superconducting and Other Innovative Materials and Devices (SPIN), Consiglio Nazionale delle Ricerche (CNR), Via Cinthia, I-80126 Napoli, Italy
- Naples Division, Istituto Nazionale di Fisica Nucleare (INFN), Via Cinthia, I-80126 Napoli, Italy;
| | - Graziella Malandrino
- Dipartimento di Scienze Chimiche, Università di Catania, and INSTM UdR Catania, Viale A. Doria 6, I-95125 Catania, Italy; (A.L.P.); (F.L.P.)
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Lee YJ, Hong K, Na K, Yang J, Lee TH, Kim B, Bark CW, Kim JY, Park SH, Lee S, Jang HW. Nonvolatile Control of Metal-Insulator Transition in VO 2 by Ferroelectric Gating. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203097. [PMID: 35713476 DOI: 10.1002/adma.202203097] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Revised: 06/09/2022] [Indexed: 06/15/2023]
Abstract
Controlling phase transitions in correlated materials yields emergent functional properties, providing new aspects to future electronics and a fundamental understanding of condensed matter systems. With vanadium dioxide (VO2 ), a representative correlated material, an approach to control a metal-insulator transition (MIT) behavior is developed by employing a heteroepitaxial structure with a ferroelectric BiFeO3 (BFO) layer to modulate the interaction of correlated electrons. Owing to the defect-alleviated interfaces, the enhanced coupling between the correlated electrons and ferroelectric polarization is successfully demonstrated by showing a nonvolatile control of MIT of VO2 at room temperature. The ferroelectrically-tunable MIT can be realized through the Mott transistor (VO2 /BFO/SrRuO3 ) with a remanent polarization of 80 µC cm-2 , leading to a nonvolatile MIT behavior through the reversible electrical conductance with a large on/off ratio (≈102 ), long retention time (≈104 s), and high endurance (≈103 cycles). Furthermore, the structural phase transition of VO2 is corroborated by ferroelectric polarization through in situ Raman mapping analysis. This study provides novel design principles for heteroepitaxial correlated materials and innovative insight to modulate multifunctional properties.
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Affiliation(s)
- Yoon Jung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Kootak Hong
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Department of Material Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Kyeongho Na
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Jiwoong Yang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Tae Hyung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Byungsoo Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Chung Wung Bark
- Department of Electrical Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, South Korea
| | - Jae Young Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sung Hyuk Park
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sanghan Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
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5
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Martínez J, Mosquera-Vargas E, Fuenzalida V, Flores M, Bolaños G, Diosa J. Surface and Electrical Characterization of Bilayers Based on BiFeO3 and VO2. NANOMATERIALS 2022; 12:nano12152578. [PMID: 35957006 PMCID: PMC9370327 DOI: 10.3390/nano12152578] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2022] [Revised: 07/22/2022] [Accepted: 07/23/2022] [Indexed: 12/04/2022]
Abstract
Thin films of BiFeO3, VO2, and BiFeO3/VO2 were grown on SrTiO3(100) and Al2O3(0001) monocrystalline substrates using radio frequency and direct current sputtering techniques. To observe the effect of the coupling between these materials, the surface of the films was characterized by profilometry, atomic force microscopy, and X-ray photoelectron spectroscopy. The heterostructures, monolayers, and bilayers based on BiFeO3 and VO2 grew with good adhesion and without delamination or signs of incompatibility between the layers. A good granular arrangement and RMS roughness between 1 and 5 nm for the individual layers (VO2 and BiFeO3) and between 6 and 18 nm for the bilayers (BiFeO3/VO2) were observed. Their grain size is between 20 nm and 26 nm for the individual layers and between 63 nm and 67 nm for the bilayers. X-ray photoelectron spectroscopy measurements show a higher proportion of V4+, Bi3+, and Fe3+ in the films obtained. The homogeneous ordering, low roughness, and oxidation states on the obtained surface show a good coupling in these films. The I-V curves show ohmic behavior at room temperature and change with increasing temperature. The effect of coupling these materials in a thin film shows the appearance of hysteresis cycles, I-V and R-T, which is typical of materials with high potential in applications, such as resistive memories and solar cells.
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Affiliation(s)
- Jhonatan Martínez
- Grupo de Transiciones de Fase y Materiales Funcionales, Departamento de Física, FCNE, Universidad del Valle, Santiago de Cali 76001, Colombia;
| | - Edgar Mosquera-Vargas
- Grupo de Transiciones de Fase y Materiales Funcionales, Departamento de Física, FCNE, Universidad del Valle, Santiago de Cali 76001, Colombia;
- Centro de Excelencia en Nuevos Materiales (CENM), Universidad del Valle, Santiago de Cali 76001, Colombia
- Correspondence: (E.M.-V.); (G.B.); (J.D.)
| | - Víctor Fuenzalida
- Laboratorio de Superficies y Nanomateriales, Departamento de Física, FCFM, Universidad de Chile, Av. Blanco Encalada 2008, Santiago de Chile 837.0415, Chile; (V.F.); (M.F.)
| | - Marcos Flores
- Laboratorio de Superficies y Nanomateriales, Departamento de Física, FCFM, Universidad de Chile, Av. Blanco Encalada 2008, Santiago de Chile 837.0415, Chile; (V.F.); (M.F.)
| | - Gilberto Bolaños
- Grupo de Física de Bajas Temperaturas, Universidad del Cauca, Popayán 190002, Colombia
- Correspondence: (E.M.-V.); (G.B.); (J.D.)
| | - Jesús Diosa
- Grupo de Transiciones de Fase y Materiales Funcionales, Departamento de Física, FCNE, Universidad del Valle, Santiago de Cali 76001, Colombia;
- Centro de Excelencia en Nuevos Materiales (CENM), Universidad del Valle, Santiago de Cali 76001, Colombia
- Correspondence: (E.M.-V.); (G.B.); (J.D.)
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6
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Koch D, Manzhos S, Chaker M. The Role of Local DFT+ U Minima in the First-Principles Modeling of the Metal-Insulator Transition in Vanadium Dioxide. J Phys Chem A 2022; 126:3604-3611. [PMID: 35639019 DOI: 10.1021/acs.jpca.2c03097] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
The DFT+U method is frequently employed to improve the first-principles description of strongly correlated materials. However, it is prone to deliver metastable electronic minima. While these local minima of the DFT+U method are often considered to be computational artifacts, their physical meaning and relationship to true excited states remains unclear. In this work, the possibility of theoretically modeling transformations in the solid state that require thermal or optical excitations of electrons is explored, taking into account the metastable states of the computationally undemanding DFT+U formalism. For this purpose, we choose to examine the example of the VO2 metal-insulator transition. Metastable states that are located on different electronic potential energy surfaces are found to correspond to experimentally observed VO2 phases. The identified metastable electronic states can be used to model the collapse of the VO2 band gap at elevated temperatures and upon photoexcitation as well as other monoclinic-monoclinic phase transformations. The results suggest that local DFT+U minima can indeed carry physical meaning, while they remain under-reported in theoretical literature on transition metal oxides like VO2.
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Affiliation(s)
- Daniel Koch
- Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, 1650 boulevard Lionel Boulet, Varennes, QC J3X 1P7, Canada
| | - Sergei Manzhos
- School of Materials and Chemical Technology, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8552, Japan
| | - Mohamed Chaker
- Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, 1650 boulevard Lionel Boulet, Varennes, QC J3X 1P7, Canada
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7
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Li B, Li L, Ren H, Lu Y, Peng F, Chen Y, Hu C, Zhang G, Zou C. Photoassisted Electron-Ion Synergic Doping Induced Phase Transition of n-VO 2/p-GaN Thin-Film Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43562-43572. [PMID: 34468117 DOI: 10.1021/acsami.1c10401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
As a typical correlated metal oxide, vanadium dioxide (VO2) shows specific metal-insulator transition (MIT) properties and demonstrates great potential applications in ultrafast optoelectronic switch, resistive memory, and neuromorphic devices. Effective control of the MIT process is essential for improving the device performance. In the current study, we have first proposed a photoassisted ion-doping method to modulate the phase transition of the VO2 layer based on the photovoltaic effect and electron-ion synergic doping in acid solution. Experimental results show that, for the prepared n-VO2/p-GaN nanojunction, this photoassisted strategy can effectively dope the n-VO2 layer by H+, Al3+, or Mg2+ ions under light radiation and trigger consecutive insulator-metal-insulator transitions. If combined with standard lithography or electron beam etching processes, selective doping with nanoscale size area can also be achieved. This photoassisted doping method not only shows a facile route for MIT modulation via a doping route under ambient conditions but also supplies some clues for photosensitive detection in the future.
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Affiliation(s)
- Bowen Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
| | - Liang Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
| | - Hui Ren
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
| | - Yuan Lu
- State Key Laboratory of Pulsed Power Laser Technology, NUDT, Hefei 230037, P. R. China
- Infrared and Low Temperature Plasma Key Laboratory of Anhui Province, NUDT, Hefei 230037, P. R. China
| | - Fangfang Peng
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei 230029, P. R. China
| | - Yuliang Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
| | - Changlong Hu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
| | - Guobin Zhang
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
- Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230029, P. R. China
| | - Chongwen Zou
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
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8
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Han K, Wu L, Cao Y, Wang H, Ye C, Huang K, Motapothula M, Xing H, Li X, Qi DC, Li X, Renshaw Wang X. Enhanced Metal-Insulator Transition in Freestanding VO 2 Down to 5 nm Thickness. ACS APPLIED MATERIALS & INTERFACES 2021; 13:16688-16693. [PMID: 33793182 DOI: 10.1021/acsami.1c01581] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Ultrathin freestanding membranes with a pronounced metal-insulator transition (MIT) have huge potential for future flexible electronic applications as well as provide a unique aspect for the study of lattice-electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm) is typically detrimental to the MIT in epitaxial films, and even catastrophic for their freestanding form. Here, we report an enhanced MIT in VO2-based freestanding membranes, with a lateral size up to millimeters and the VO2 thickness down to 5 nm. The VO2 membranes were detached by dissolving a Sr3Al2O6 sacrificial layer between the VO2 thin film and the c-Al2O3(0001) substrate, allowing the transfer onto arbitrary surfaces. Furthermore, the MIT in the VO2 membrane was greatly enhanced by inserting an intermediate Al2O3 buffer layer. In comparison with the best available ultrathin VO2 membranes, the enhancement of MIT is over 400% at a 5 nm VO2 thickness and more than 1 order of magnitude for VO2 above 10 nm. Our study widens the spectrum of functionality in ultrathin and large-scale membranes and enables the potential integration of MIT into flexible electronics and photonics.
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Affiliation(s)
- Kun Han
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371, Singapore
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Liang Wu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371, Singapore
- School of Material Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093, China
| | - Yu Cao
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3 117583, Singapore
| | - Hanyu Wang
- Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China
| | - Chen Ye
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371, Singapore
| | - Ke Huang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371, Singapore
| | - M Motapothula
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-75120, Sweden
- Department of Physics, SRM University AP, Amaravati, Andhra Pradesh 522-502, India
| | - Hongna Xing
- School of Physics, Northwest University, Xi'an 710069, China
| | - Xinghua Li
- School of Physics, Northwest University, Xi'an 710069, China
| | - Dong-Chen Qi
- Centre for Materials Science, School of Chemistry and Physics, Queensland University of Technology, Brisbane, Queensland 4001, Australia
| | - Xiao Li
- Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China
| | - X Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
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9
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Sajjadizadeh HS, Ahmadzadeh H, Goharshadi EK, Aziznezhad M. Engineering of a high-efficiency water splitting photoanode by synergistic effects of doping, compositing, and coupling on TiO2 nanoparticles. Electrochim Acta 2020. [DOI: 10.1016/j.electacta.2020.137149] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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10
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Zhou J, Xie M, Ji H, Cui A, Ye Y, Jiang K, Shang L, Zhang J, Hu Z, Chu J. Mixed-Dimensional Van der Waals Heterostructure Photodetector. ACS APPLIED MATERIALS & INTERFACES 2020; 12:18674-18682. [PMID: 32208640 DOI: 10.1021/acsami.0c01076] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Van der Waals (vdW) heterostructures, integrated two-dimensional (2D) materials with various functional materials, provide a distinctive platform for next-generation optoelectronics with unique flexibility and high performance. However, exploring the vdW heterostructures combined with strongly correlated electronic materials is hitherto rare. Herein, a novel temperature-sensitive photodetector based on the GaSe/VO2 mixed-dimensional vdW heterostructure is discovered. Compared with previous devices, our photodetector exhibits excellent enhanced performance, with an external quantum efficiency of up to 109.6% and the highest responsivity (358.1 mA·W-1) under a 405 nm laser. Interestingly, we show that the heterostructure overcomes the limitation of a single material under the interaction between VO2 and GaSe, where the photoresponse is highly sensitive to temperature and can be further vanished at the critical value. The metal-insulator transition of VO2, which controls the peculiar band-structure evolution across the heterointerface, is demonstrated to manipulate the photoresponse variation. This study enables us to elucidate the method of manipulating 2D materials by strongly correlated electronic materials, paving the way for developing high-performance and special optoelectronic applications.
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Affiliation(s)
- Jiaoyan Zhou
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Mingzhang Xie
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Huan Ji
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Anyang Cui
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Yan Ye
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
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11
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Guan H, Zhang D, Yang Y, Liu Y, Zhong A, He Q, Qi J, Fan P. A Novel Method for Notable Reducing Phase Transition Temperature of VO 2 Films for Smart Energy Efficient Windows. NANOMATERIALS 2019; 10:nano10010058. [PMID: 31881791 PMCID: PMC7023470 DOI: 10.3390/nano10010058] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/06/2019] [Revised: 12/19/2019] [Accepted: 12/20/2019] [Indexed: 11/23/2022]
Abstract
Although Vanadium dioxide (VO2) has a potential application value for smart energy efficient windows because of its unique phase transition characteristic, there are still many obstacles that need to be overcome. One challenge is to reduce its high transition temperature (ζc = 68 °C) to near room temperature without causing its phase transition performance degradation. In this paper, a novel method was employed that covered a 3 nm ultra-thin heavy Cr-doped VO2 layer on the pure VO2 films. Compared with the as-grown pure VO2, obviously, phase transition temperature decreasing from 59.5 °C to 48.0 °C was observed. Different from previous doping techniques, almost no phase transition performance weakening occurred. Based on the microstructure and electrical parameters measurement results, the mechanism of ζc reducing was discussed. The upper ultra-thin heavy Cr-doped layer may act as the induced role of phase transition. With temperature increasing, carrier concentration increased from the upper heavy Cr-doped layer to the bottom pure VO2 layer by diffusion, and induced the carrier concentration reach to phase transition critical value from top to bottom gradually. The present method is not only a simpler technique, but also avoids expensive alloy targets.
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12
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Bohaichuk SM, Muñoz Rojo M, Pitner G, McClellan CJ, Lian F, Li J, Jeong J, Samant MG, Parkin SSP, Wong HSP, Pop E. Localized Triggering of the Insulator-Metal Transition in VO 2 Using a Single Carbon Nanotube. ACS NANO 2019; 13:11070-11077. [PMID: 31393698 DOI: 10.1021/acsnano.9b03397] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about the IMT at nanoscale dimensions. To shed light on this problem, here we use ∼1 nm-wide carbon nanotube (CNT) heaters to trigger the IMT in VO2. Single metallic CNTs switch the adjacent VO2 at less than half the voltage and power required by control devices without a CNT, with switching power as low as ∼85 μW at 300 nm device lengths. We also obtain potential and temperature maps of devices during operation using Kelvin probe microscopy and scanning thermal microscopy. Comparing these with three-dimensional electrothermal simulations, we find that the local heating of the VO2 by the CNT plays a key role in the IMT. These results demonstrate the ability to trigger IMT in VO2 using nanoscale heaters and highlight the significance of thermal engineering to improve device behavior.
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Affiliation(s)
- Stephanie M Bohaichuk
- Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States
| | - Miguel Muñoz Rojo
- Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States
- Department of Thermal and Fluid Engineering , University of Twente , 7500 AE Enschede , The Netherlands
| | - Gregory Pitner
- Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States
| | - Connor J McClellan
- Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States
| | - Feifei Lian
- Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States
| | - Jason Li
- Asylum Research , Santa Barbara , California 93117 , United States
| | - Jaewoo Jeong
- IBM Almaden Research Center , San Jose , California 95120 , United States
| | - Mahesh G Samant
- IBM Almaden Research Center , San Jose , California 95120 , United States
| | - Stuart S P Parkin
- IBM Almaden Research Center , San Jose , California 95120 , United States
| | - H-S Philip Wong
- Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States
| | - Eric Pop
- Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States
- Department of Materials Science and Engineering , Stanford University , Stanford , California 94305 , United States
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13
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Tadeo IJ, Mukhokosi EP, Krupanidhi SB, Umarji AM. Low-cost VO 2(M1) thin films synthesized by ultrasonic nebulized spray pyrolysis of an aqueous combustion mixture for IR photodetection. RSC Adv 2019; 9:9983-9992. [PMID: 35520889 PMCID: PMC9062365 DOI: 10.1039/c9ra00189a] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2019] [Accepted: 02/27/2019] [Indexed: 01/13/2023] Open
Abstract
We report detailed structural, electrical transport and IR photoresponse properties of large area VO2(M1) thin films deposited by a simple cost-effective two-step technique. Phase purity was confirmed by XRD and Raman spectroscopy studies. The high quality of the films was further established by a phase change from low temperature monoclinic phase to high temperature tetragonal rutile phase at 68 °C from temperature dependent Raman studies. An optical band gap of 0.75 eV was estimated from UV-visible spectroscopy. FTIR studies showed 60% reflectance change at λ = 7.7 μm from low reflectivity at low temperature to high reflectivity at high temperature in a transition temperature of 68 °C. Electrical characterization showed a first order transition of the films with a resistance change of four orders of magnitude and TCR of -3.3% K-1 at 30 °C. Hall-effect measurements revealed the n-type nature of VO2 thin films with room temperature Hall mobility, μ e of 0.097 cm2 V-1 s-1, conductivity, σ of 0.102 Ω-1 cm-1 and carrier concentration, n e = 5.36 × 1017 cm-3. In addition, we fabricated a high photoresponsive IR photodetector based on VO2(M1) thin films with excellent stability and reproducibility in ambient conditions using a low-cost method. The VO2(M1) photodetector exhibited high sensitivity, responsivity, quantum efficiency, detectivity and photoconductive gain of 5.18%, 1.54 mA W-1, 0.18%, 3.53 × 1010 jones and 9.99 × 103 respectively upon illumination with a 1064 nm laser at a power density of 200 mW cm-2 and 10 V bias voltage at room temperature.
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Affiliation(s)
- Inyalot Jude Tadeo
- Materials Research Centre, Indian Institute of Science Bengaluru 560012 India +91-80-23607316 +91-80-22932944
| | - Emma P Mukhokosi
- Materials Research Centre, Indian Institute of Science Bengaluru 560012 India +91-80-23607316 +91-80-22932944
| | - Saluru B Krupanidhi
- Materials Research Centre, Indian Institute of Science Bengaluru 560012 India +91-80-23607316 +91-80-22932944
| | - Arun M Umarji
- Materials Research Centre, Indian Institute of Science Bengaluru 560012 India +91-80-23607316 +91-80-22932944
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14
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Kim JE, Shin JY, Jang HS, Jeon JW, Hong WG, Kim HJ, Choi J, Kim GT, Kim BH, Park J, Choi YJ, Park JY. Influence of hydrogen incorporation on conductivity and work function of VO 2 nanowires. NANOSCALE 2019; 11:4219-4225. [PMID: 30806433 DOI: 10.1039/c9nr00245f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report improved conductance by reducing the work function via incorporation of hydrogen into VO2 nanowires. The VO2 nanowires were prepared using the chemical vapor deposition method with V2O5 powder on silicon substrates at 850 °C. Hydrogenation was carried out using the high-pressure hydrogenation method. Raman spectroscopy confirmed that the incorporated hydrogen atoms resulted in a change in the lattice constant of the VO2 nanowires (NWs). To quantitatively measure the work function of the nanowires, Kelvin probe force microscopy (KPFM) was employed at ambient conditions. We found that the work function decreased with increasing H2 pressure, which also resulted in increased conductance. This is associated with hydrogen diffused into the VO2 that acts as a donor to elevate the Fermi level, which was also confirmed by KPFM. From these results, tuning of the reversible electrical properties of VO2 NWs, including the conductance and work function, can be achieved by incorporating hydrogen at relatively moderate temperatures.
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Affiliation(s)
- Jae-Eun Kim
- Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon, 34141, Republic of Korea.
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15
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Zhou J, Xie M, Cui A, Zhou B, Jiang K, Shang L, Hu Z, Chu J. Manipulating Behaviors from Heavy Tungsten Doping on Interband Electronic Transition and Orbital Structure Variation of Vanadium Dioxide Films. ACS APPLIED MATERIALS & INTERFACES 2018; 10:30548-30557. [PMID: 30105904 DOI: 10.1021/acsami.8b09909] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Vanadium dioxide (VO2) with a metal-insulator transition (MIT) has been supposed as a candidate for optoelectronic devices. However, the MIT temperature ( TMIT) above room temperature limits its application scope. Here, high-quality V1- xW xO2 films have been prepared by pulsed laser deposition. On the basis of temperature-dependent transmittance and Raman spectra, it was found that TMIT increases from 241 to 279 K, when increasing the doping concentration in the range of 0.16 ≤ x ≤ 0.20. The interband electronic transitions and orbital structures of V1- xW xO2 films have been investigated via fitting transmittance spectra. Moreover, with the aid of first-principles calculations, an effective orbital theory has been proposed to explain the unique phenomenon. When the W doping concentration increases, the π* and dII orbitals shift toward the π orbital. Meanwhile, the energy gap between the π* and dII orbitals decreases at the insulator state. It indicates that the bandwidth is narrowed, which impedes MIT. In addition, the overlap of the π* and dII orbitals increases at the metal state, and more doping electrons occupy the π* orbital induced by increasing W doping concentration. It manifests that the Mott insulating state becomes more stable, which further improves TMIT. The present work provides a feasible approach to tune TMIT via orbital variation and can be helpful in developing the potential VO2-based optoelectronic devices.
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Affiliation(s)
- Jiaoyan Zhou
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
| | - Mingzhang Xie
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
| | - Anyang Cui
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
| | - Bin Zhou
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
| | - Kai Jiang
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
| | - Liyan Shang
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
| | - Zhigao Hu
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
- Collaborative Innovation Center of Extreme Optics , Shanxi University , Taiyuan , Shanxi 030006 , China
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE) and Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Electronic Engineering , East China Normal University , Shanghai 200241 , China
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16
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Ko E, Shin J, Shin C. Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors. NANO CONVERGENCE 2018; 5:2. [PMID: 29399434 PMCID: PMC5787217 DOI: 10.1186/s40580-018-0135-4] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2017] [Accepted: 01/11/2018] [Indexed: 06/07/2023]
Abstract
Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance FET), in which a threshold selector is added to an electrode (e.g., source or drain) of conventional field effect transistor. Although the concept of the aforementioned two devices was presented more or less recently, numerous studies have been published. In this review paper, by reviewing the published studies over the last decade, we shall de-brief and discuss the history and the future perspectives of NCFET/phase FET, respectively. The background, experimental investigation, and future direction for developing the aforementioned two representative steep switching devices (i.e., NCFET and phase FET/negative resistance FET) are to be discussed in detail.
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Affiliation(s)
- Eunah Ko
- Department of Electrical and Computer Engineering, University of Seoul, Seoul, 02504 South Korea
| | - Jaemin Shin
- Department of Electrical and Computer Engineering, University of Seoul, Seoul, 02504 South Korea
| | - Changhwan Shin
- Department of Electrical and Computer Engineering, University of Seoul, Seoul, 02504 South Korea
- SK Hynix, 2091, Gyeongchung-daero, Bubal-eup, Icheon-si, Gyeonggi-do South Korea
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17
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Zhang J, Zhao Z, Li J, Jin H, Rehman F, Chen P, Jiang Y, Chen C, Cao M, Zhao Y. Evolution of Structural and Electrical Properties of Oxygen-Deficient VO 2 under Low Temperature Heating Process. ACS APPLIED MATERIALS & INTERFACES 2017; 9:27135-27141. [PMID: 28753266 DOI: 10.1021/acsami.7b05792] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Structural stability and functional performances of vanadium dioxide (VO2) are strongly influenced by oxygen vacancies. However, the mechanism of metal-insulator transition (MIT) influenced by defects is still under debate. Here, we study the evolution of structure and electrical property of oxygen-deficient VO2 by a low temperature annealing process (LTP) based on a truss-structured VO2 nanonet. The oxygenation process of the oxygen-deficient VO2 is greatly prolonged, which enables us to probe the gradual change of properties of the oxygen-deficient VO2. A continuous lattice reduction is observed during LTP. No recrystallization and structural collapse of the VO2 nanonet can be found after LTP. The valence-band X-ray photoelectron spectroscopy (XPS) measurements indicate that the oxygen deficiency strongly affects the energy level of the valence band edge. Correspondingly, the resistance changes of the VO2 films from 1 to 4.5 orders of magnitude are achieved by LTP. The effect of oxygen vacancy on the electric field driven MIT is investigated. The threshold value of voltage triggering the MIT decreases with increasing the oxygen vacancy concentration. This work demonstrates a novel and effective way to control the content of oxygen vacancies in VO2 and the obvious impact of oxygen vacancy on MIT, facilitating further research on the role of oxygen vacancy in structure and MIT of VO2, which is important for the deep understanding of MIT and exploiting innovative functional application of VO2.
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Affiliation(s)
- Jiasong Zhang
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
- Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Zhengjing Zhao
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
| | - Jingbo Li
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
| | - Haibo Jin
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
| | - Fida Rehman
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
| | - Pengwan Chen
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
| | - Yijie Jiang
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
- Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Chunxu Chen
- Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Maosheng Cao
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
| | - Yongjie Zhao
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
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18
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Synthesis and thermochromic property studies on W doped VO 2 films fabricated by sol-gel method. Sci Rep 2017; 7:6132. [PMID: 28733653 PMCID: PMC5522425 DOI: 10.1038/s41598-017-05229-9] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/03/2017] [Accepted: 05/25/2017] [Indexed: 11/13/2022] Open
Abstract
Tungsten-doped VO2 thin films have been synthesized by a modified sol–gel process and followed by a post annealing. Vanadium pentoxide and tungstic acid as raw materials with the addition of hydrogen peroxide, concentrated hydrochloric acid (catalyst) and oxalic acid used as reducing agent were reacted in isobutanol. Finally, the uniform sol of vanadyl oxalate in isobutanol solvent was obtained as precursor. Detailed study suggested that W doped in VO2 introduces additional electron carriers and induces the formation of V3+. Post annealing under vacuum promotes the releasing of chemical stress and generates oxygen vacancies in the samples. Temperature dependent transmittance study revealed that the releasing of chemical stress and deliberately introducing oxygen vacancies in W-doped VO2 films have positive effects on enhancing its switching ability in the infrared transmittance as the metal-insulator transition (MIT) occurs. The largest switching of transmittance was obtained about 48% in the infrared range at 43 °C in 1.5%W doped VO2 films, which is significantly larger than the reported ones. The findings in this work open a new way to synthesize the novel and thermochromic W doped VO2 films with facility and low cost. Therefore, it has extensive application to construct smart windows and electronic devices.
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19
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Sohn JI, Cha SN, Son SB, Kim JM, Welland ME, Hong WK. Metastable state-induced consecutive step-like negative differential resistance behaviors in single crystalline VO 2 nanobeams. NANOSCALE 2017; 9:8200-8206. [PMID: 28580984 DOI: 10.1039/c7nr00318h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We demonstrate the current-dependent consecutive appearance of two different negative differential resistance (NDR) transitions in a single crystalline VO2 nanobeam epitaxially grown on a c-cut sapphire substrate. It is revealed that the first NDR occurs at an approximately constant current level as a result of the carrier injection-induced transition, independent of a thermally induced phase transition. In contrast, it is observed that the second NDR exhibits a temperature-dependent behavior and current values triggering the metal-insulator transition (MIT) are strongly mediated by Joule heating effects in a phase coexisting temperature range. Moreover, we find that the electrically and thermally triggered MIT behavior can be closely related with the alternate occurrence of current-induced multiple insulating and metallic phase coexistence in the nanobeam. These findings indicate that the current density passing through VO2 plays a critical role in both the electrical and structural phase transitions.
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Affiliation(s)
- Jung Inn Sohn
- Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, UK.
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20
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Influence of Discharge Current on Phase Transition Properties of High Quality Polycrystalline VO₂ Thin Film Fabricated by HiPIMS. MATERIALS 2017; 10:ma10060633. [PMID: 28772990 PMCID: PMC5554014 DOI: 10.3390/ma10060633] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2017] [Revised: 06/04/2017] [Accepted: 06/06/2017] [Indexed: 11/17/2022]
Abstract
To fabricate high-quality polycrystalline VO₂ thin film with a metal-insulator transition (MIT) temperature less than 50 °C, high-power impulse magnetron sputtering with different discharge currents was employed in this study. The as-deposited VO₂ films were characterized by a four-point probe resistivity measurement system, visible-near infrared (IR) transmittance spectra, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The resistivity results revealed that all the as-deposited films had a high resistance change in the phase transition process, and the MIT temperature decreased with the increased discharge current, where little deterioration in the phase transition properties, such as the resistance and transmittance changes, could be found. Additionally, XRD patterns at various temperatures exhibited that some reverse deformations that existed in the MIT process of the VO₂ film, with a large amount of preferred crystalline orientations. The decrease of the MIT temperature with little deterioration on phase transition properties could be attributed to the reduction of the preferred grain orientations.
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21
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Abbas K, Hwang J, Bae G, Choi H, Kang DJ. Control of Multilevel Resistance in Vanadium Dioxide by Electric Field Using Hybrid Dielectrics. ACS APPLIED MATERIALS & INTERFACES 2017; 9:13571-13576. [PMID: 28351132 DOI: 10.1021/acsami.6b16424] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We investigate the effect of electric field on VO2 back-gated field effect transistor (FET) devices. Using hybrid dielectric layers, we demonstrate the highest resistance modulation on the order of 102 in VO2 at a positive gate bias of 80 V (1.6 MV/cm). VO2 FET devices are prepared on SiO2 substrates of different thicknesses (100-300 nm) and hybrid dielectric layers of Al2O3/SiO2 (500 nm). For thicknesses less than 300 nm, no electric-field effects are observed, whereas for a 300 nm thickness, a small decrease in resistance is observed under a 0.2 MV/cm electric field. Under the electrostatic effect, the carrier concentration increases in VO2 devices, decreasing the resistance and the transition temperature from 66.75 to 64 °C. The leakage analysis shows that the interface quality of VO2 films on hybrid dielectric layers can be further improved. These studies suggest a multilevel fast resistance switching with the electric field and give an insight into the gate-source leakage current, which limits the phase transition in VO2 in an electric field.
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Affiliation(s)
- Kaleem Abbas
- Department of Physics and Energy Science, Sungkyunkwan University , 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do, Republic of Korea
| | - Jaeseok Hwang
- Department of Physics and Energy Science, Sungkyunkwan University , 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do, Republic of Korea
| | - Garam Bae
- Department of Physics and Energy Science, Sungkyunkwan University , 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do, Republic of Korea
| | - Hongsoo Choi
- Department of Robotics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST) , 711-873 Daegu, Republic of Korea
| | - Dae Joon Kang
- Department of Physics and Energy Science, Sungkyunkwan University , 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do, Republic of Korea
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22
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Fan L, Chen Y, Liu Q, Chen S, Zhu L, Meng Q, Wang B, Zhang Q, Ren H, Zou C. Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO 2 Film. ACS APPLIED MATERIALS & INTERFACES 2016; 8:32971-32977. [PMID: 27934180 DOI: 10.1021/acsami.6b12831] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
In this work, high-quality VO2 epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO2/GaN film device, we observed that the infrared transmittance and resistance of VO2 films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO2 in infrared range, an optoelectronic memory device was achieved. This memory device was operated under the "electrical writing-optical reading" mode, which shows promising applications in VO2-based optoelectronic device in the future.
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Affiliation(s)
- Lele Fan
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology , Yancheng 224051, China
- National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei, 230029, China
| | - Yuliang Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei, 230029, China
| | - Qianghu Liu
- Science and Technology on Electro-optical Information Security Control Laboratory, Tianjin 300300, China
| | - Shi Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei, 230029, China
| | - Lei Zhu
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology , Yancheng 224051, China
| | - Qiangqiang Meng
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology , Yancheng 224051, China
| | - Baolin Wang
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology , Yancheng 224051, China
- School of Physical Science and Technology, Nanjing Normal University , Nanjing 210023, People's Republic of China
| | - Qinfang Zhang
- Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology , Yancheng 224051, China
| | - Hui Ren
- National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei, 230029, China
| | - Chongwen Zou
- National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei, 230029, China
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Li D, Sharma AA, Gala DK, Shukla N, Paik H, Datta S, Schlom DG, Bain JA, Skowronski M. Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices. ACS APPLIED MATERIALS & INTERFACES 2016; 8:12908-12914. [PMID: 27136956 DOI: 10.1021/acsami.6b03501] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model.
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Affiliation(s)
| | | | | | - Nikhil Shukla
- Department of Electrical Engineering, University of Notre Dame , Notre Dame, Indiana 46556, United States
| | - Hanjong Paik
- Department of Material Science and Engineering, Cornell University , Ithaca, New York 14853, United States
| | - Suman Datta
- Department of Electrical Engineering, University of Notre Dame , Notre Dame, Indiana 46556, United States
| | - Darrell G Schlom
- Department of Material Science and Engineering, Cornell University , Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science , Ithaca, New York 14853, United States
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24
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High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation. Sci Rep 2016; 6:19496. [PMID: 26783076 PMCID: PMC4726073 DOI: 10.1038/srep19496] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/27/2015] [Accepted: 12/14/2015] [Indexed: 11/12/2022] Open
Abstract
Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems.
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25
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Yajima T, Nishimura T, Toriumi A. Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics. Nat Commun 2015; 6:10104. [PMID: 26657761 PMCID: PMC4682056 DOI: 10.1038/ncomms10104] [Citation(s) in RCA: 32] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/27/2015] [Accepted: 11/03/2015] [Indexed: 11/09/2022] Open
Abstract
The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal-insulator transitions. Metal-insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor channels will enable us to significantly modulate transistor current. However, such gate-controlled metal-insulator transitions have been challenging because of the limited number of electrons accumulated by gate dielectrics, or possible electrochemical reaction in ionic liquid gate. Here we achieve a positive-bias gate-controlled metal-insulator transition near the transition temperature. A significant number of electrons were accumulated via a high-permittivity TiO2 gate dielectric with subnanometre equivalent oxide thickness in the inverse-Schottky-gate geometry. An abrupt transition in the VO2 channel is further exploited, leading to a significant current modulation far beyond the capacitive coupling. This solid-state operation enables us to discuss the electrostatic mechanism as well as the collective nature of gate-controlled metal-insulator transitions, paving the pathway for developing functional field effect transistors.
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Affiliation(s)
- Takeaki Yajima
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.,JST-CREST, Tokyo 113-8656, Japan
| | - Tomonori Nishimura
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.,JST-CREST, Tokyo 113-8656, Japan
| | - Akira Toriumi
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.,JST-CREST, Tokyo 113-8656, Japan
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26
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Wang X, Gao H. Distinguishing the Photothermal and Photoinjection Effects in Vanadium Dioxide Nanowires. NANO LETTERS 2015; 15:7037-7042. [PMID: 26422776 DOI: 10.1021/acs.nanolett.5b03086] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Vanadium dioxide (VO2) has drawn significant attention for its unique metal-to-insulator transition near the room temperature. The high electrical resistivity below the transition temperature (∼68 °C) is a result of the strong electron correlation with the assistance of lattice (Peierls) distortion. Theoretical calculations indicated that the strong interelectron interactions might induce intriguing optoelectronic phenomena, such as the multiple exciton generation (MEG), a process desirable for efficient optoelectronics and photovoltaics. However, the resistivity of VO2 is quite temperature sensitive, and therefore, the light-induced conductivity in VO2 has often been attributed to the photothermal effects. In this work, we distinguished the photothermal and photoinjection effects in VO2 nanowires by varying the chopping frequency of the optical illumination. We found that, in our VO2 nanowires, the relatively slow photothermal processes can be well suppressed when the chopping frequency is >2 kHz, whereas the fast photoinjection component (direct photoexcitation of charge carriers) remains constant at all chopping frequencies. By separating the photothermal and photoinjection processes, our work set the basis for further studies of carrier dynamics under optical excitations in strongly correlated materials.
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Affiliation(s)
- Xi Wang
- Department of Physics and ‡Materials Science Program, Florida State University , Tallahassee, Florida 32306, United States
| | - Hanwei Gao
- Department of Physics and ‡Materials Science Program, Florida State University , Tallahassee, Florida 32306, United States
- National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States
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