Inverted Quantum-Dot Light Emitting Diode Using Solution Processed p-Type WOx Doped PEDOT:PSS and Li Doped ZnO Charge Generation Layer

On the Fate of Lithium Ions in Sol-Gel Derived Zinc Oxide Nanocrystals

Among diverse chemical synthetic approaches to zinc oxide nanocrystals (ZnO NCs), ubiquitous inorganic sol-gel methodology proved crucial for advancements in ZnO-based nanoscience. Strikingly, unlike the exquisite level of control over morphology and size dispersity achieved in ZnO NC syntheses, the purity of the crystalline phase, as well as the understanding of the surface structure and the character of the inorganic-organic interface, have been limited to vague descriptors until very recently. Herein, ZnO NCs applying the standard sol-gel synthetic protocol are synthesized with zinc acetate and lithium hydroxide and tracked the integration of lithium (Li) cations into the interior and exterior of nanoparticles by combining various techniques, including advanced solid-state NMR methods. In contrast to common views, it is demonstrated that Li+ ions remain kinetically trapped in the inorganic core, enter into a shallow subsurface layer, and generate "swelling" of the surface and interface regions. Thus, this work enabled both the determination of the NCs' structural imperfections and an in-depth understanding of the unappreciated role of the Li+ ions in impacting the doping and the passivation of sol-gel-derived ZnO nanomaterials.

Bright and Stable Yellow Quantum Dot Light-Emitting Diodes Through Core-Shell Nanostructure Engineering

Solution-processed and efficient yellow quantum dot light-emitting diodes (QLEDs) are considered key optoelectronic devices for lighting, display, and signal indication. However, limited synthesis routes for yellow quantum dots (QDs), combined with inferior stress-relaxation of the core-shell interface, pose challenges to their commercialization. Herein, a nanostructure tailoring strategy for high-quality yellow CdZnSe/ZnSe/ZnS core/shell QDs using a "stepwise high-temperature nucleation-shell growth" method is introduced. The synthesized CdZnSe-based QDs effectively smoothed the release stress of the core-shell interface and revealed a near-unit photoluminescence quantum yield, with nonblinking behavior and matched energy level, which accelerated radiative recombination and charge injection balance for device operation. Consequently, the yellow CdZnSe-based QLEDs exhibited a peak external quantum efficiency of 23.7%, a maximum luminance of 686 050 cd m-2, and a current efficiency of 103.2 cd A-1, along with an operating half-lifetime of 428 523 h at 100 cd m-2. To the best of the knowledge, the luminance and operational stability of the device are found to be the highest values reported for yellow LEDs. Moreover, devices with electroluminescence (EL) peaks at 570-605 nm exhibited excellent EQEs, surpassing 20%. The work is expected to significantly push the development of RGBY-based display panels and white LEDs.

Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies

Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.

Optimizing ZnO-Quantum Dot Interface with Thiol as Ligand Modification for High-Performance Quantum Dot Light-Emitting Diodes

As the electron transport layer in quantum dot light-emitting diodes (QLEDs), ZnO suffers from excessive electrons that lead to luminescence quenching of the quantum dots (QDs) and charge-imbalance in QLEDs. Therefore, the interplay between ZnO and QDs requires an in-depth understanding. In this study, DFT and COSMOSL simulations are employed to investigate the effect of sulfur atoms on ZnO. Based on the simulations, thiol ligands (specifically 2-hydroxy-1-ethanethiol) to modify the ZnO nanocrystals are adopted. This modification alleviates the excess electrons without causing any additional issues in the charge injection in QLEDs. This modification strategy proves to be effective in improving the performance of red-emitting QLEDs, achieving an external quantum efficiency of over 23% and a remarkably long lifetime T95 of >12 000 h at 1000 cd m-2 . Importantly, the relationship between ZnO layers with different electronic properties and their effect on the adjacent QDs through a single QD measurement is investigated. These findings show that the ZnO surface defects and electronic properties can significantly impact the device performance, highlighting the importance of optimizing the ZnO-QD interface, and showcasing a promising ligand strategy for the development of highly efficient QLEDs.

Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics

The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

Advances and Challenges in Heavy-Metal-Free InP Quantum Dot Light-Emitting Diodes

Light-emitting diodes based on colloidal quantum dots (QLEDs) show a good prospect in commercial application due to their narrow spectral linewidths, wide color range, excellent luminance efficiency, and long operating lifetime. However, the toxicity of heavy-metal elements, such as Cd-based QLEDs or Pb-based perovskite QLEDs, with excellent performance, will inevitably pose a serious threat to people’s health and the environment. Among heavy-metal-free materials, InP quantum dots (QDs) have been paid special attention, because of their wide emission, which can, in principle, be tuned throughout the whole visible and near-infrared range by changing their size, and InP QDs are generally regarded as one of the most promising materials for heavy-metal-free QLEDs for the next generation displays and solid-state lighting. In this review, the great progress of QLEDs, based on the fundamental structure and photophysical properties of InP QDs, is illustrated systematically. In addition, the remarkable achievements of QLEDs, based on their modification of materials, such as ligands exchange of InP QDs, and the optimization of the charge transport layer, are summarized. Finally, an outlook is shown about the challenge faced by QLED, as well as possible pathway to enhancing the device performance. This review provides an overview of the recent developments of InP QLED applications and outlines the challenges for achieving the high-performance devices.

Efficient flexible quantum-dot light-emitting diodes with unipolar charge injection

The exfoliation between the electrode film and the adjacent functional layer is still a big challenge for the flexible light emitting diodes, especially for the devices dependent on the direct charge injection from the electrodes. To address this issue, we design a flexible quantum-dot light-emitting diodes (QLEDs) with a charge-generation layer (CGL) on the bottom electrode as the electron supplier. The CGL consisting of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/ZnO can provide sufficient electron injection into the QDs, enabling a balanced charge injection. As a result, the CGL-based QLED exhibits a peak external quantum efficiency 18.6%, over 25% enhancement in comparison with the device with ZnO as the electron transport layer. Moreover, the residual electrons in the ZnO can be pulled back to the PEDOT:PSS/ZnO interface by the storage holes in the CGL, which are released and accelerates the electron injection during the next driving voltage pulse, hence improving the electroluminescence response speed of the QLEDs.

Flexible CdSe/ZnS Quantum-Dot Light-Emitting Diodes with Higher Efficiency than Rigid Devices

Fabrication of high-performance, flexible quantum-dot light-emitting diodes (QLEDs) requires the reliable manufacture of a flexible transparent electrode to replace the conventional brittle indium tin oxide (ITO) transparent electrode, along with flexible substrate planarization. We deposited a transparent oxide/metal/oxide (OMO) electrode on a polymer planarization layer and co-optimized both layers. The visible transmittance of the OMO electrode on a polyethylene terephthalate substrate increased markedly. Good electron supply and injection into an electron-transporting layer were achieved using WO_X/Ag/ WO_X and MoOx/Ag/MoO_X OMO electrodes. High-performance flexible QLEDs were fabricated from these electrodes; a QLED with a MoO_X/Ag/ MoO_X cathode and an SU-8 planarization layer had a current efficiency of 30.3 cd/A and luminance more than 7 × 10⁴ cd/m². The current efficiency was significantly higher than that of a rigid QLED with an ITO cathode and was higher than current efficiency values obtained from previously reported QLEDs that utilized the same quantum-dot and electron-transporting layer materials as our study.

Efficient Tandem Quantum-Dot LEDs Enabled by An Inorganic Semiconductor-Metal-Dielectric Interconnecting Layer Stack

Light-emitting diodes (LEDs) in a tandem configuration offer a strategy to realize high-performance, multicolor devices. Until now, though, the efficiency of tandem colloidal quantum dot LEDs (QLEDs) has been limited due to unpassivated interfaces and solvent damage originating from the materials processing requirements of interconnecting layers (ICLs). Here an ICL is reported consisting of a semiconductor-metal-dielectric stack that provides facile fabrication, materials stability, and good optoelectronic coupling. It is investigated experimentally how the ICL enables charge balance, suppresses current leakage, and prevents solvent damage to the underlying layers. As a result record efficiencies are reported for double-junction tandem QLEDs, whose emission wavelengths cover from blue to red light; i.e., external quantum efficiencies (EQEs) of 40% (average 37+/-2%) for red, 49% (average 45+/-2%) for yellow, 50% (average 46+/-2%) for green, and 24% (average 21+/-2%) for blue are achieved.

Highly Efficient and Super Stable Full-Color Quantum Dots Light-Emitting Diodes with Solution-Processed All-Inorganic Charge Transport Layers

High performance and super stable all-inorganic full-color quantum dot light-emitting diodes (QLEDs) are constructed by adopting solution-processed Mg-doped NiO_x (Mg-NiO_x ) nanoparticles as hole transport layer (HTL) and Al-doped ZnO (AZO) as electron transport layer (ETL). Mg-NiO_x nanoparticles possess the advantages of low-temperature solution processability, intrinsic stability, and controllable electronic properties. UV-ozone (UVO) treatment is applied to the Mg-NiO_x film to modulate its surface composition. By carefully controlling the UVO treating time, favorable energy levels can be achieved to minimize the energy barrier for hole injection. At the cathode side, Al-doping can reduce the conductivity of ZnO ETL and decrease the interface charge transfer, effectively, thus leading to more balanced charge injection and consequent high luminance and efficiency. The maximum luminance and EQE can reach as high as 38 444 cd m^-2 and 5.09% for R-QLEDs, 177 825 cd m^-2 and 10.1% for G-QLEDs, and 3103 cd m^-2 and 2.19% for B-QLEDs. The luminance values are the highest ever reported for all-inorganic QLEDs. Furthermore, the all-inorganic devices show much better resistance to water and oxygen existing in air. The results show that the ion-doped NiO_x and AZO nanoparticles would facilitate the design and development of highly efficient and super stable QLEDs.

Al-, Ga-, Mg-, or Li-doped zinc oxide nanoparticles as electron transport layers for quantum dot light-emitting diodes

Colloidal quantum dots and other semiconductor nanocrystals are essential components of next-generation lighting and display devices. Due to their easily tunable and narrow emission band and near-unity fluorescence quantum yield, they allow cost-efficient fabrication of bright, pure-color and wide-gamut light emitting diodes (LEDs) and displays. A critical improvement in the quantum dot LED (QLED) technology was achieved when zinc oxide nanoparticles (NPs) were first introduced as an electron transport layer (ETL) material, which tremendously enhanced the device brightness and current efficiency due to the high mobility of electrons in ZnO and favorable alignment of its energy bands. During the next decade, the strategy of ZnO NP doping allowed the fabrication of QLEDs with a brightness of about 200 000 cd/m2 and current efficiency over 60 cd/A. On the other hand, the known ZnO doping approaches rely on a very fine tuning of the energy levels of the ZnO NP conduction band minimum; hence, selection of the appropriate dopant that would ensure the best device characteristics is often ambiguous. Here we address this problem via detailed comparison of QLEDs whose ETLs are formed by a set of ZnO NPs doped with Al, Ga, Mg, or Li. Although magnesium-doped ZnO NPs are the most common ETL material used in recently designed QLEDs, our experiments have shown that their aluminum-doped counterparts ensure better device performance in terms of brightness, current efficiency and turn-on voltage. These findings allow us to suggest ZnO NPs doped with Al as the best ETL material to be used in future QLEDs.

High-Performance Quantum-Dot Light-Emitting Transistors Based on Vertical Organic Thin-Film Transistors

In this work, a novel vertical quantum-dot light-emitting transistor (VQLET) based on a vertical organic thin-film transistor is successfully fabricated. Benefiting from the new vertical architecture, the VQLET is able to afford an extremely high current density, which allows most of the organic thin film transistors (OTFT) even with low mobility (for instance, poly(3-hexylthiophene)) to drive a quantum-dot light-emitting diode (QLED), which was previously unavailable. Moreover, the hole injection barrier could be modulated by the additional gate electrode, which precisely optimizes the charge balance in the device, a critical issue in QLED, resulting in the precise control of current density and brightness of the VQLET. The VQLET shows a high performance with a maximum current efficiency of 37 cd/A. Furthermore, integrating OTFT and QLED into a single device, the VQLET features drastic advantages by realizing active matrix quantum-dot light-emitting diodes (AMQLEDs), which significantly reduces the number of transistors and frees the large area fraction occupied by transistors. Hence, these results indicate that the VQLET provides a new strategy for realizing a low-cost, solution-processed, high-performance OTFT-AMQLED for the flat panel display technology. Moreover, the novel design offers a unique method to exquisitely control the charge balance and maximize the efficiency the QLED.

Blue quantum dot light-emitting diodes with high luminance by improving the charge transfer balance

The development of blue quantum dot light-emitting diodes (QLEDs) lags far behind that of the red and green ones, which hinders the practical commercialization of QLEDs. Balancing the charge transfer still remains a challenging task, because blue QD emitters have a deeper valence band (VB) that creates a great injection barrier impeding the hole transfer. Herein, we demonstrate that the charge transfer balance can be improved by using a tert-butyldimethylsilyl chloride-modified poly(p-phenylene benzobisoxazole) (TBS-PBO) blocking layer. The TBS-PBO acts well in blocking excess electron injection and preserving the emission efficiency of the QD emitter. Compared to the insulating blocking layers, TBS-PBO has good conductivity, thus keeping the current density at a high level. Our device delivers a notable luminance of 4635 cd m-2 at an external quantum efficiency (EQE) maximum of 17.4%. To the best of our knowledge, the luminance with EQE > 17% is the highest one to be reported for blue QLEDs.

Structure optimization of perovskite quantum dot light-emitting diodes

Although all-inorganic perovskite light emitting diodes (PeLED) have satisfactory stability under an ambient atmosphere, producing devices with high performance is challenging. A device architecture with a reduced energy barrier between adjacent layers and optimized energy level alignment in the PeLED is critical to achieve high electroluminescence efficiency. In this study, we report the optimization of a CsPbBr3-based PeLED device structure with Li-doped TiO2 nanoparticles as the electron transport layer (ETL). Optimal Li doping balances charge carrier injection between the hole transport layer (HTL) and ETL, leading to superior performance in both devices. The turn-on voltages for devices with Li-doped TiO2 nanoparticles were significantly reduced from 7.7 V to 4.9 V and from 3 V to 2 V in the direct and inverted PeLED structures, respectively. The low turn-on voltage for green emission is one of the lowest values among the reported CsPbBr3-based PeLEDs. Further investigations show that the device with an inverted structure is superior to the device with a direct structure because the energy barrier for carrier injection was minimized. The inverted structure devices exhibited a current efficiency of 5.6 cd A-1 for the pristine TiO2 ETL, while it was 15.2 cd A-1 for the Li-doped TiO2 ETL, a factor of ∼2.7 enhancement at 5000 cd m-2.

Electron transport phenomena at the interface of Al electrode and heavily doped degenerate ZnO nanoparticles in quantum dot light emitting diode

ZnO nanoparticles (NPs) of 4-5 nm, widely adopted as an electron transport layer (ETL) in quantum dot light emitting diodes (QD-LEDs), were synthesized using the solution-precipitation process. It is notable that synthesized ZnO NPs are highly degenerate intrinsic semiconductors and their donor concentration can be increased up to N _D = 6.9 × 10²¹ cm^-3 by annealing at 140 °C in air. An optical bandgap increase of as large as 0.16-0.33 eV by degeneracy is explained well by the Burstein-Moss shift. In order to investigate the influence of intrinsic defects of ZnO NP ETLs on the performance of QD-LED devices without a combined annealing temperature between ZnO NP ETLs and the emissive QD layer, pre-annealed ZnO NPs at 60 °C, 90 °C, 140 °C, and 180 °C were spin-coated on the annealed QD layer without further post-annealing. As the annealing temperature increases from 60 °C to 180 °C, the defect density related to oxygen vacancy (V _O) in ZnO NPs is reduced from 34.4% to 17.8%, whereas the defect density of interstitial Zn (Zn_i) is increased. Increased Zn_i reduces the width (W) of the depletion region from 0.21 to 0.12 nm and lowers the Schottky barrier (Ф_B) between ZnO NPs and the Al electrode from 1.19 to 0.98 eV. We reveal for the first time that carrier conduction between ZnO NP ETLs and the Al electrode is largely affected by the concentration of Zn_i above the conduction band minimum, and effectively described by space charge limited current and trap charge limited current models.

Li and Mg Co-Doped Zinc Oxide Electron Transporting Layer for Highly Efficient Quantum Dot Light-Emitting Diodes

Zinc-oxide (ZnO) is widely used as an n-type electron transporting layer (ETL) for quantum dot (QD) light-emitting diode (QLED) because various metal doping can be possible and ZnO nanoparticle can be processed at low temperatures. We report here a Li- and Mg-doped ZnO, MLZO, which is used for ETL of highly efficient and long lifetime QLEDs. Co-doping, Mg and Li, in ZnO increases its band gap and electrical resistivity and thus can enhance charge balance in emission layer (EML). It is found also that the O-H concentration at the oxide surface decreases and exciton decay time of QDs on the metal oxide increases by co-doping in ZnO. The inverted green QLEDs with MLZO ETL exhibits the maximum current efficiency (CE_max) of 69.1 cd/A, power efficiency (PE_max) of 73.8 lm/W, and external quantum efficiency (EQE_max) of 18.4%. This is at least two times higher compared with the efficiencies of the QLEDs with Mg-doped ZnO ETL. The optimum Li and Mg concentrations are found to be 10% each. The deep-red, red, light-blue, and deep-blue QLEDs with MLZO ETLs exhibit the CE_max of 6.0, 22.3, 1.9, and 0.5 cd/A, respectively. The MLZO introduced here can be widely used as ETL of highly efficient QLEDs.

Fully Solution-Processed Tandem White Quantum-Dot Light-Emitting Diode with an External Quantum Efficiency Exceeding 25

Solution-processed electroluminescent tandem white quantum-dot light-emitting diodes (TWQLEDs) have the advantages of being low-cost and high-efficiency and having a wide color gamut combined with color filters, making this a promising backlight technology for high-resolution displays. However, TWQLEDs are rarely reported due to the challenge of designing device structures and the deterioration of film morphology with component layers that can be deposited from solutions. Here, we report an interconnecting layer with the optical, electrical, and mechanical properties required for fully solution-processed TWQLED. The optimized TWQLEDs exhibit a state-of-the-art current efficiency as high as 60.4 cd/A and an extremely high external quantum efficiency of 27.3% at a luminance of 100 000 cd/m². A high color gamut of 124% NTSC 1931 standard can be achieved when combined with commercial color filters. These results represent the highest performance for solution-processed WQLEDs, unlocking the great application potential of TWQLEDs as backlights for new-generation displays.

Low Work Function 2.81 eV Rb2CO3-Doped Polyethylenimine Ethoxylated for Inverted Organic Light-Emitting Diodes

We report a low work function (2.81 eV), Rb₂CO₃-doped polyethyleneimine ethoxylated (PEIE) which is used for highly efficient and long-lifetime, inverted organic light-emitting diodes (OLEDs). Doping Rb₂CO₃ into PEIE decreases the work function of Li-doped ZnO (LZO) by 1.0 eV and thus significantly improves electron injection ability into the emission layer (EML). The inverted OLED with PEIE:Rb₂CO₃ interfacial layer (IL) exhibits higher efficiency and longer operation lifetime than those of the device with a PEIE IL. It is found also that Mg-doped ZnO (MZO) can be used instead of LZO as electron transporting layer.

MZO/PEIE

Rb₂CO₃ shows a low work function of 2.81 eV. The OLED with MZO/PEIE:Rb₂CO₃ exhibits low operating voltage of 5.0 V at 1000 cd m^-2 and low efficiency roll-off of 11.8% at high luminance of 10 000 cd m^-2. The results are due to the suppressed exciton quenching at the MZO/organic EML interface.

Balancing the Electron and Hole Transfer for Efficient Quantum Dot Light-Emitting Diodes by Employing a Versatile Organic Electron-Blocking Layer

The electron-blocking layer (EBL) is important to balance the charge carrier transfer and achieve highly efficient quantum dot light-emitting diodes (QLEDs). Here, we report the utilization of a soluble tert-butyldimethylsilyl chloride-modified poly( p-phenylene benzobisoxazole) (TBS-PBO) as an EBL for simultaneous good charge carrier transfer balance while maintaining a high current density. We show that the versatile TBS-PBO blocks excess electron injection into the quantum dots (QDs), thus leading to better charge carrier transfer balance. It also restricts the undesired QD-to-EBL electron-transfer process, which preserves the superior emission capabilities of the emitter. As a consequence, the TBS-PBO device delivers an external quantum efficiency (EQE) maximum of 16.7% along with a remarkable current density as high as 139 mA/cm² with a brightness of 5484 cd/m². The current density of our device is higher than those of insulator EBL-based devices because of the higher conductivity of the TBS-PBO versus insulator EBL, thus helping achieve high luminance values ranging from 1414 to 20 000 cd/cm² with current densities ranging from 44 to 648 mA/cm² and EQE > 14%. We believe that these unconventional features of the present TBS-PBO-based QLEDs will expand the wide use of TBS-PBO as buffer layers in other advanced QLED applications.

Quantum-dot light-emitting diodes with a perfluorinated ionomer-doped copper-nickel oxide hole transporting layer

Herein, we report all solution-processed green quantum-dot light-emitting diodes (G-QLEDs) by introducing a perfluorinated ionomer (PFI, Nafion 117) into quantum dots (QDs) to improve hole injection. To reduce the energy level mismatch between the hole transporting layer (HTL) and QDs and exciton quenching on the metal-oxide surface, a PFI-mixed copper-doped nickel oxide (Cu-NiO) HTL was introduced for G-QLEDs. Mixing Cu-NiO with a PFI increases the work function and induces phase separation between Cu-NiO and PFI; thus, energy band bending occurs on the surface such that effective hole injection can be possible. The phase-separated PFI molecules on HTL affect the thickness and compactness of G-QDs and make a smooth interface between G-QDs and HTL. The G-QLED with a PFI and Cu-NiO mixture HTL exhibits the maximum current efficiency (CEmax), power efficiency (PEmax), and external quantum efficiency (EQEmax) of 7.3 cd A-1, 2.1 lm W-1, and 2.14%, respectively, which are about 4 times those of the QLED with a Cu-NiO HTL.

Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr3 Quantum Dot-Based Inverted Light-Emitting Diodes

All-inorganic perovskite light-emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve high performance of the device. Basically, device design, control of energy-level alignment, and reducing the energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr₃-based PeLED with an inverted architecture using lithium-doped TiO₂ nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to superior device performance. The device exhibits a current efficiency of 3 cd A^-1, a luminance efficiency of 2210 cd m^-2, and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest values among reported CsPbBr₃-based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium-doped TiO₂ compared to that for undoped TiO₂-based devices.

Efficient Red/Green/Blue Tandem Quantum-Dot Light-Emitting Diodes with External Quantum Efficiency Exceeding 21

Highly efficient tandem quantum-dot light-emitting diodes (QLEDs) are developed by using an interconnecting layer (ICL) with the structure of ZnMgO/Al/HATCN/MoO₃. The developed ICL exhibits high transparency, efficient charge generation/injection capability, and high robustness to resist solvent damage during deposition of the upper functional layers. With the proposed ICL, full color (red/green/blue, R/G/B) tandem QLEDs are demonstrated with extremely high current efficiency and external quantum efficiency (EQE): 17.9 cd/A and 21.4% for B-QLEDs, 121.5 cd/A and 27.6% for G-QLEDs, 41.5 cd/A and 23.1% for R-QLEDs. To the best of our knowledge, these are the highest values ever reported. In addition, the EQEs of R-, G-, and B-QLEDs all exceed 21%. The high efficiency can be well maintained over a wide range of luminance from 10² to 10⁴ cd/m². For example, even at a high brightness of 20 000 cd/m², the EQE of R-, G-, and B-QLEDs can still sustain its 96%, 99%, and 78% maximum value, respectively. The demonstrated full-color tandem QLEDs, with extremely high efficiency, long operational lifetime, low roll-off efficiency, and high color purity, would be ideal candidates to bring QLEDs into the next generation of full-color displays and the solid-state lighting market.

Blue Quantum Dot Light-Emitting Diodes with High Electroluminescent Efficiency

High-efficiency blue CdSe/ZnS quantum dots (QDs) have been synthesized for display application with emission peak over 460 nm with the purpose of reducing the harmful effect of short-wavelength light to human eyes. To reach a better charge balance, different size ZnO nanoparticles (NPs) were synthesized and electrical properties of ZnO NPs were analyzed. Quantum dot light-emitting diodes (QLEDs) based on as-prepared blue QDs and optimized ZnO NPs have been successfully fabricated. Using small-size ZnO NPs, we have obtained a maximum current efficiency (CE) of 14.1 cd A^-1 and a maximum external quantum efficiency (EQE) of 19.8% for QLEDs with an electroluminescence (EL) peak at 468 nm. To the best of our knowledge, this EQE is the highest value in comparison to the previous reports. The CIE 1931 color coordinates (0.136, 0.078) of this device are quite close to the standard (0.14, 0.08) of National Television System Committee (NTSC) 1953. The color saturation blue QLEDs show great promise for use in next-generation full-color displays.

Solution-Processed Metal-Oxide p-n Charge Generation Junction for High-Performance Inverted Quantum-Dot Light-Emitting Diodes

We report solution-processed metal-oxide p-n junction, Li-doped CuO (Li:CuO) and Li-doped ZnO (Li:ZnO), as a charge generation junction (CGJ) in quantum-dot light-emitting diode (QLED) at reverse bias. Efficient charge generation is demonstrated in a stack of air-annealed Li:CuO and Li:ZnO layers in QLEDs. Air annealing of Li:ZnO on Li:CuO turns out to be a key process to decrease oxygen vacancy (V_o) and increase the copper (II) oxide (CuO) fraction at the Li:CuO/Li:ZnO interface for efficient charge generation. Green QLEDs incorporating Li:CuO/Li:ZnO CGJ show the maximum current and power efficiencies of 35.4 cd/A and 33.5 lm/W, respectively.

High-efficiency inverted quantum dot light-emitting diodes with enhanced hole injection

Hybrid MoO₃/HAT-CN is employed as a hole injection layer (HIL) in green inverted colloidal quantum dot light-emitting devices (QLEDs). The hybrid HILs can be easily prepared and have been found to effectively improve the electroluminescent properties. The best performance device had an HIL of 1.5 nm-thick MoO₃/2.5 nm-thick HAT-CN and showed a turn-on voltage of 1.9 V, a maximum current efficiency (CE_max) of 41.3 cd A^-1, and maximum external quantum efficiency of 9.72%. Compared to the corresponding devices with the single MoO₃ or HAT-CN interlayer, the CE_max of the hole-only devices was improved by 1.6 or 1.5 times, respectively. The measured electrical performance shows that hole-only devices with hybrid HILs have a smaller leakage current density at low driving voltage and much enhanced hole injection current than the devices with single interlayers. It indicates that much improved electroluminescent efficiency in green inverted QLEDs with hybrid MoO₃/HAT-CN orginates from the significant enhancement of hole injection efficiency and suppression of space charge accumulation in the quantum dot-emitting region due to the improved balance of the charge carriers. The hybrid HILs can be extended to other color inverted QLEDs, which are favorable to achieve bright, highly efficient, and color saturation devices for display applications.

Colloidal quantum-dots surface and device structure engineering for high-performance light-emitting diodes

The application of colloidal quantum dots for light-emitting devices has attracted considerable attention in recent years, due to their unique optical properties such as size-dependent emission wavelength, sharp emission peak and high luminescent quantum yield. Tremendous efforts have been made to explore quantum dots for light-emission applications such as light-emitting diodes (LEDs) and light converters. The performance of quantum-dots-based light-emitting diodes (QD-LEDs) has been increasing rapidly in recent decades as the development of quantum-dots synthesis, surface-ligand engineering and device-architecture optimization. Recently, the external quantum efficiencies of red quantum-dots LEDs have exceeded 20.5% with good stability and narrow emission peak. In this review, we summarize the recent advances in QD-LEDs, focusing on quantum-dot surface engineering and device-architecture optimization.

Composition analysis of two different PEDOT:PSS commercial products used as an interface layer in Au/n-Si Schottky diode

The water based highly conductive transparent poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) polymer is a promising material for many optoelectronic device applications.

Quantum dot light-emitting diodes using a graphene oxide/PEDOT:PSS bilayer as hole injection layer

Adoption of graphene oxide/PEDOT:PSS as a HIL layer dramatically improves the electro-optical performance of QLED devices.

Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes

We report highly efficient inverted quantum-dot light emitting diodes (QLEDs) using an Al doped ZnO (AZO)/Li doped ZnO (LZO) stack electron transport layer (ETL). An introduction of the LZO layer on AZO improved the current and power efficiencies of the green (G-) QLEDs from 10.5 to 34.0 cd A^-1 and from 5.4 to 29.6 lm W^-1, respectively. The red (R-), G-, and blue (B-) QLEDs fabricated in this work exhibited the maximum external quantum efficiencies (EQEs) of 8.4, 12.5, and 4.3%, respectively. It is found from time-resolved photoluminescence (PL) and transient electroluminescence (EL) decay that exciton loss at the interface between the ETL and the emission layer can be significantly reduced by introducing LZO.

Very Bright and Efficient Microcavity Top-Emitting Quantum Dot Light-Emitting Diodes with Ag Electrodes

The microcavity effect in top-emitting quantum dot light-emitting diodes (TQLEDs) is theoretically and experimentally investigated. By carefully optimizing the cavity length, the thickness of the top Ag electrode and the thickness of the capping layer, very bright and efficient TQLEDs with external quantum efficiency (EQE) of 12.5% are demonstrated. Strong dependence of luminance and efficiency on cavity length is observed, in good agreement with theoretical calculation. By setting the normal-direction resonant wavelength around the peak wavelength of the intrinsic emission, highest luminance of 112 000 cd/m(2) (at a driving voltage of 7 V) and maximum current efficiency of 27.8 cd/A are achieved, representing a 12-fold and a 2.1-fold enhancement compared to 9000 cd/m(2) and 13.2 cd/A of the conventional bottom emitting devices, respectively, whereas the highest EQE of 12.5% is obtained by setting the resonant wavelength 30 nm longer than the peak wavelength of the intrinsic emission. Benefit from the very narrow spectrum of QDs and the low absorption of silver electrodes, the potential of microcavity effect can be fully exploited in TQLEDs.

A facile method for the synthesis of CuInS2–ZnS quantum dots with tunable photoluminescent properties

CuInS₂/CuInS₂–ZnS quantum dots showed excellent tunable photoluminescent properties, which demonstrate great potential for practical applications due to their non-toxicity and excellent optical properties.

Synthesis and evaluation of κ2-β-diketonate and β-ketoesterate tungsten(vi) oxo-alkoxide complexes as precursors for chemical vapor deposition of WOx thin films

β-Diketonate and β-ketoesterate tungsten(vi) oxo-alkoxide complexes were synthesized and CVD of WO_x from WO(OCH₂C(CH₃)₃)₃(tbac) was demonstrated.