Enhanced Thermoelectric Performance of Nanostructured Bi2Te3 through Significant Phonon Scattering

Tailoring thermoelectric performance ofn-type Bi2Te3through defect engineering and conduction band convergence

Bi2Te3, an archetypical tetradymite, is recognised as a thermoelectric (TE) material of potential application around room temperature. However, large energy gap (ΔEc) between the light and heavy conduction bands results in inferior TE performance in pristine bulkn-type Bi2Te3. Herein, we propose enhancement in TE performance of pristinen-type Bi2Te3through purposefully manipulating defect profile and conduction band convergence mechanism. Twon-type Bi2Te3samples, S1 and S2, are prepared by melting method under different synthesis condition. The structural as well as microstructural evidence of the samples are obtained through powder x-ray diffraction and transmission electron microscopic study. Optothermal Raman spectroscopy is utilized for comprehensive study of temperature dependent phonon vibrational modes and total thermal conductivity (κ) of the samples which further validates the experimentally measured thermal conductivity. The Seebeck coefficient value is significantly increased from 235 μVK-1(sample S1) to 310 μVK-1(sample S2). This is further justified by conduction band convergence, where ΔEcis reduced from 0.10 eV to 0.05 eV, respectively. To verify the band convergence, the double band Pisarenko model is employed. Large power factor (PF) of 2190 μWm-1K-2and lowerκvalue leading toZTof 0.56 at 300 K is gained in S2. The obtainedPFandZTvalue are among the highest values reported for pristinen-type bulk Bi2Te3. In addition, appreciable value of TE quality factor and compatibility factor (2.7 V-1) at room temperature are also achieved, indicating the usefulness of the material in TE module.

Achieving High Thermoelectric Performance in ZnSe-Doped CuGaTe2 by Optimizing the Carrier Concentration and Reducing Thermal Conductivity

The CuGaTe2 thermoelectric material has garnered widespread attention as an inexpensive and nontoxic material for mid-temperature thermoelectric applications. However, its development has been hindered by its low intrinsic carrier concentration and high thermal conductivity. This study investigates the band structure and thermoelectric properties of (CuGaTe2)1-x (ZnSe)x (x = 0, 0.25%, 0.5%, 1%, 1.5%, and 2%). The research revealed that the incorporation of Zn and Se atoms enhanced the level of band degeneracy and electron density of states near Fermi level, significantly raising carrier concentration through the formation of Zn Ga - point defects. Simultaneously, when the doping content reached 1.5%, the ZnTe second phase emerged, collaborating with point defects and high-density dislocations, effectively scattering phonons and substantially reducing lattice thermal conductivity. Therefore, introducing ZnSe can simultaneously optimize the material's electrical and thermal transport properties. The (CuGaTe2)0.985(ZnSe)0.015 sample reaches peak ZT of 1.32 at 823 K, representing a 159% increase compared to pure CuGaTe2.

Selective Charge Carrier Transport and Bipolar Conduction in an Inorganic/Organic Bulk-Phase Composite: Optimization for Low-Temperature Thermoelectric Performance

Abundant conducting polymers are promising organic substances for low-temperature thermoelectric applications due to their inherently low thermal conductivities. By introducing a conducting polymer filler (PEDOT:PSS─poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonic acid)) into a representative inorganic thermoelectric matrix (Bi2Te3), a bulk-phase composite (i.e., inorganic matrix/organic filler) for low-temperature thermoelectric applications is proposed. This composite hosts an interfacial energy barrier between the inorganic and organic components, facilitating controlled carrier transport based on its energy level, known as the energy filtering effect, and thus the composite exhibits a highly improved Seebeck coefficient compared to pristine Bi2Te3. The composite also displays a completely different temperature dependence on the Seebeck coefficient from Bi2Te3 due to its distinct bipolar conduction tendency. By regulation of the energy filtering effect and bipolar conduction tendency, the composite undergoes noticeable variations in the Seebeck coefficient, resulting in a significantly enhanced power factor. Furthermore, the composite shows a substantially reduced thermal conductivity compared to Bi2Te3 because it has lower carrier/lattice thermal contributions, possibly attributed to its high carrier/phonon scattering probabilities. Owing to the superior power factor and reduced thermal conductivity, the composite exhibits markedly enhanced thermoelectric performance, achieving a maximum figure of merit of approximately 1.26 at 380 K and an average figure of merit of approximately 1.23 in the temperature range of 323-423 K. The performance of the composite is competitive with previously reported n-type Bi2Te3 binary or ternary analogues. Therefore, the composite is highly expected to be a promising n-type counterpart of p-type Bi2Te3-based alloys for various low-temperature thermoelectric applications.

Janus 2H-MXTe (M = Zr, Hf; X = S, Se) monolayers with outstanding thermoelectric properties and low lattice thermal conductivities

Two-dimensional (2D) materials have been one of the most popular objects in the research field of thermoelectric (TE) materials and have attracted substantial attention in recent years. Inspired by the synthesized 2H-MoSSe and numerous theoretical studies, we systematically investigated the electronic, thermal, and TE properties of Janus 2H-MXTe (M = Zr and Hf; X = S and Se) monolayers by using first-principles calculations. The phonon dispersion curves and AIMD simulations confirm the thermodynamic stabilities. Moreover, Janus 2H-MXTe were evaluated as indirect band-gap semiconductors with band gaps ranging from 0.56 to 0.90 eV using the HSE06 + SOC method. To evaluate the TE performance, firstly, we calculated the temperature-dependent carrier relaxation time with acoustic phonon scattering τac, impurity scattering τimp, and polarized scattering τpol. Secondly, the calculation of lattice thermal conductivity (κl) shows that these monolayers possess relatively poor κl with values of 3.4-5.4 W mK-1 at 300 K, which is caused by the low phonon lifetime and group velocity. After computing the electronic transport properties, we found that the n-type doped Janus 2H-MXTe monolayers exhibit a high Seebeck coefficient exceeding 200 μV K-1 at 300 K, resulting in a high TE power factor. Eventually, combining the electrical and thermal conductivities, the optimal dimensionless figure of merit (zT) at 300 K (900 K) can be obtained, which is 0.94 (3.63), 0.51 (2.57), 0.64 (2.72), and 0.50 (1.98) for n-type doping of ZrSeTe, HfSeTe, ZeSTe, and HfSTe monolayers. Particularly, the ZrSeTe monolayer shows the best TE performance with the maximal zT value. These results indicate the excellent application potential of Janus 2H-MXTe (M = Zr and Hf; X = S and Se) monolayers in TE materials.

Structural, Optical, Electrical, and Thermoelectric Properties of Bi2Se3 Films Deposited at a High Se/Bi Flow Rate

Low-temperature synthesis of Bi2Se3 thin film semiconductor thermoelectric materials is prepared by the plasma-enhanced chemical vapor deposition method. The Bi2Se3 film demonstrated excellent crystallinity due to the Se-rich environment. Experimental results show that the prepared Bi2Se3 film exhibited 90% higher transparency in the mid-IR region, demonstrating its potential as a functional material in the atmospheric window. Excellent mobility of 2094 cm2/V·s at room temperature is attributed to the n-type conductive properties of the film. Thermoelectrical properties indicate that with the increase in Se vapor, a slight decrease in conductivity of the film is observed at room temperature with an obvious increase in the Seebeck coefficient. In addition, Bi2Se3 thin film showed an enhanced power factor of as high as 3.41 μW/cmK2. Therefore, plasma-enhanced chemical vapor deposition (PECVD)-grown Bi2Se3 films on Al2O3 (001) substrates demonstrated promising thermoelectric properties.

Attaining High Figure of Merit in the N-Type Bi2Te2.7Se0.3-Ag2Te Composite System via Comprehensive Regulation of Its Thermoelectric Properties

n-Type Bi₂Te_2.7Se_0.3 (BTS) is the state-of-the-art thermoelectric material near room temperature. However, the figure of merit ZT of commercial BTS ingots is still limited and further improvement is imperative for their wide applications. Here, the results show that through dispersion of the Ag₂Te nanophase in BTS, one can not only elevate its power factor (PF) by as high as 14% (at 300 K) but also reduce its thermal conductivity κ_tot to as small as ∼29% (at 300 K). Experimental evidences show that the improved PF comes from both increased electron mobility via inhibited Te vacancies and enhanced thermopower due to energy filtering effect, while the reduction of κ_tot originates from the drop of both electronic thermal conductivity largely owing to the reduced number of vacancy V_Te^·· and intensified phonon scattering chiefly from the dispersed Ag₂Te nanophase. Consequently, the largest ZT_max = 1.31 (at 350 K) and average ZT_ave = 1.16 (300-500 K) are achieved for the Bi₂Te_2.7Se_0.3-0.3 wt % Ag₂Te composite sample, leading to a projected conversion efficiency η = 8.3% (300-500 K). The present results demonstrate that incorporation of nanophase Ag₂Te is an effective approach to boosting the thermoelectric performance of BTS.

Nanostructured Thermoelectric Films Synthesised by Spark Ablation and Their Oxidation Behaviour

Reducing the thermal conductivity of thermoelectric materials has been a field of intense research to improve the efficiency of thermoelectric devices. One approach is to create a nanostructured thermoelectric material that has a low thermal conductivity due to its high number of grain boundaries or voids, which scatter phonons. Here, we present a new method based on spark ablation nanoparticle generation to create nanostructured thermoelectric materials, demonstrated using Bi₂Te₃. The lowest achieved thermal conductivity was <0.1 W m-1 K-1 at room temperature with a mean nanoparticle size of 8±2 nm and a porosity of 44%. This is comparable to the best published nanostructured Bi₂Te₃ films. Oxidation is also shown to be a major issue for nanoporous materials such as the one here, illustrating the importance of immediate, air-tight packaging of such materials after synthesis and deposition.

Synergistic effect of alloying on thermoelectric properties of two-dimensional PdPQ (Q = S, Se)

Hosts of 2D materials exist, yet few allow compositional and structural tailoring as the MQ₂ (M = Mo, W; Q = S, Se) family does, for which various structural superlattices have been synthesized. Using thorough first-principles calculations, we show how bonding hierarchy contributes to the structural resilience of 2D PdPQ and allows for full-range alloying of sulfur and selenium. Within the structural unit of Pd₂P₂Q₂, the covalently-bonded [P₂Q₂]^4- polyanions hold the structure together with their molecular-like P-P bonds while ionically bonded Pd-Qs allow the S/Se substitution. Here, the bonding hierarchy imparts superior electronic and structural features to the PdPQ monolayers. As such, the flat-and-dispersive valence band and the eight degenerate valleys of the conduction band benefit the p-type and n-type thermoelectricity of pristine PdPQ, which can be further enhanced by alloying. The high-entropy alloying synergistically suppresses the lattice heat transport from 75 to 30 W m^-1 K^-1 and increases the band degeneracy of PdPQ monolayers, resulting in an overall improvement in zT. Combining these features, in a naïve approach, results in a large zT approaching two for both p-type and n-type doping. However, accurate fully-fledged electron-phonon calculations rebut this promise, showing that at high temperatures, the increased electron scattering results in a stagnant power factor in the flat-and-dispersive valence band. Using a realistic first-principles scattering, we finally calculate the thermoelectric efficiency of PdPQ (Q = S, Se) and highlight the importance of an accurate estimation of electron relaxation time for thermoelectric predictions.

Broad Temperature Plateau for High Thermoelectric Properties of n-Type Bi2Te2.7Se0.3 by 3D Printing-Driven Defect Engineering

High-energy-conversion Bi₂Te₃-based thermoelectric generators (TEGs) are needed to ensure that the assembled material has a high value of average figure of merit (ZT_ave). However, the inferior ZT_ave of the n-type leg severely restricts the large-scale applications of Bi₂Te₃-based TEGs. In this study, we achieved and reported a high peak ZT (1.33) of three-dimensional (3D)-printing n-type Bi₂Te_2.7Se_0.3. In addition, a superior ZT_ave of 1.23 at a temperature ranging from 300 to 500 K was achieved. The high value of ZT_ave was obtained by synergistically optimizing the electronic- and phonon-transport properties using the 3D-printing-driven defect engineering. The nonequilibrium solidification mechanism facilitated the multiscale defects formed during the 3D-printed process. Among the defects formed, the nanotwins triggered the energy-filtering effect, thus enhancing the Seebeck coefficient at a temperature range of 300-500 K. The effective scattering of wide-frequency phonons by multiscale defects reduced the lattice thermal conductivity close to the theoretical minimum of ∼0.35 W m^-1 k^-1. Given the advantages of 3D printing in freeform device shapes, we assembled and measured bionic honeycomb-shaped single-leg TEGs, exhibiting a record-high energy conversion efficiency (10.2%). This work demonstrates the great potential of defect engineering driven by selective laser melting 3D-printing technology for the rational design of advanced n-type Bi₂Te_2.7Se_0.3 thermoelectric material.

High Thermoelectric Performance of p-Type Bi0.4Sb1.6Te3+x Synthesized by Plasma-Assisted Ball Milling

The exploration of new synthesis methods is important for the improvement of the thermoelectric property of a material for the different mechanisms of microstructure fabrication, surface activity modulation, and particle refinement. Herein, we prepared p-Bi₂Te₃ bulk materials by a simple synthesis method of the plasma-assisted ball milling, which yielded finer nanopowders, higher texture of in-plane direction, and higher efficiency compared to the traditional ball milling, favoring the simultaneous improvement of electrical and thermal properties. When combined with the Te liquid sintering, nano-/microscale hierarchical pores were fabricated and the carrier mobility was also increased, which together resulted in the low lattice thermal conductivity of 0.52 W·m^-1·K^-1 and the high power factor of 43.4 μW·cm^-1·K^-2 at 300 K, as well as the ranking ahead zT of 1.4@375 K. Thus, this work demonstrated the advantages of plasma-assisted ball milling in highly efficient synthesis of p-type Bi₂Te₃ with promising thermoelectric performance, which can also be utilized to prepare other thermoelectric materials.

A Review of Key Properties of Thermoelectric Composites of Polymers and Inorganic Materials

This review focusses on the development of thermoelectric composites made of oxide or conventional inorganic materials, and polymers, with specific emphasis on those containing oxides. Discussion of the current state-of-the-art thermoelectric materials, including the individual constituent materials, i.e., conventional materials, oxides and polymers, is firstly presented to provide the reader with a comparison of the top-performing thermoelectric materials. Then, individual materials used in the inorganic/polymer composites are discussed to provide a comparison of the performance of the composites themselves. Finally, the addition of carbon-based compounds is discussed as a route to improving the thermoelectric performance. For each topic discussed, key thermoelectric properties are tabulated and comparative figures are presented for a wide array of materials.

Comprehensive Insight into p-Type Bi2Te3-Based Thermoelectrics near Room Temperature

Bi2Te3 is a well-recognized material for its unique properties in diverse thermoelectric applications near room temperature. The considerable efforts on Bi2Te3-based alloys have been extremely extensive in recent years, and thus the latest breakthroughs in high-performance p-type (Bi, Sb)2Te3 alloys are comprehensively reviewed to further implement applications. Effective strategies to further improve the thermoelectric performance are summarized from the perspective of enhancing the power factor and minimizing the lattice thermal conductivity. Furthermore, the surface states of topological insulators are investigated to provide a possibility of advancing (Bi, Sb)2Te3 thermoelectrics. Finally, future challenges and outlooks are overviewed. This review will provide potential guidance toward designing and developing high-efficient Bi2Te3-based and other thermoelectrics.

Accurate in situ measurements of thermoelectric transport properties at high pressure and high temperature

Regulating electron structure and electron-phonon coupling by means of pressure and temperature is an effective way to optimize thermoelectric properties. However, in situ testing of thermoelectric transport performance under pressure and temperature is hindered by technical constraints that obscure the intrinsic effects of pressure and temperature on thermoelectric properties. In the present study, a new reliable assembly was developed for testing the in situ thermoelectric transport performance of materials at high pressure and high temperature (HPHT). This reduces the influence of thermal effects on the test results and improves the success rate of in situ experiments at HPHT. The Seebeck coefficient and electrical resistivity of α-Cu₂Se were measured under HPHT, and the former was found to increase with increasing pressure and temperature; for the latter, although an increase in the pressure acted to lower the electrical resistivity, an increase in the temperature acted to increase it. On increasing pressure from 0.8 to 3 GPa at 333 K, the optimal power factor of α-Cu₂Se was increased by ∼76% from 2.36 × 10^-4-4.15 × 10^-4 W m^-1 K^-2, and the higher pressure meant that α-Cu₂Se had its maximum power factor at lower temperature. The present work is particularly important for understanding the thermoelectric mechanism under HPHT.

Optimized Thermoelectric Properties of Sulfide Compound Bi2SeS2 by Iodine Doping

The Te-free compound Bi2SeS2 is considered as a potential thermoelectric material with less environmentally hazardous composition. Herein, the effect of iodine (I) substitution on its thermoelectric transport properties was studied. The electrical conductivity was enhanced due to the increased carrier concentration caused by the carrier provided defect Ise. Thus, an enhanced power factor over 690 μWm−1K−2 was obtained at 300 K by combining a moderate Seebeck coefficient above 150 µV/K due to its large effective mass, which indicated iodine was an effective n-type dopant for Bi2SeS2. Furthermore, a large drop in the lattice thermal conductivity was observed due to the enhanced phonon scattering caused by nanoprecipitates, which resulted in a low total thermal conductivity (<0.95 Wm−1K−1) for all doped samples. Consequently, a maximum ZT value of 0.56 was achieved at 773 K for a Bi2Se1−xIxS2 (x = 1.1%) sample, a nearly threefold improvement compared to the undoped sample.

Ultralow Lattice Thermal Conductivity and Improved Thermoelectric Performance in Cl-Doped Bi2Te3-xSex Alloys

Bi2Te3-based alloys are the main materials for the construction of low- and medium-temperature thermoelectric modules. In this work, the microstructure and thermoelectric properties of Cl-doped Bi2Te3-xSex alloys were systematically investigated considering the high anisotropy inherent in these materials. The prepared samples have a highly oriented microstructure morphology, which results in very different thermal transport properties in two pressing directions. To accurately separate the lattice, electronic, and bipolar components of the thermal conductivity over the entire temperature range, we employed a two-band Kane model to the Cl-doped Bi2Te3-xSex alloys. It was established that Cl atoms act as electron donors, which tune the carrier concentration and effectively suppress the minority carrier transport in Bi2Te3-xSex alloys. The estimated value of the lattice thermal conductivity was found to be as low as 0.15 Wm-1 K-1 for Bi2Te3-x-ySexCly with x = 0.6 and y = 0.015 at 673 K in parallel to the pressing direction, which is among the lowest values reported for crystalline materials. The large reduction of the lattice thermal conductivity in both pressing directions for the investigated Bi2Te3-xSex alloys is connected with the different polarities of the Bi-(Te/Se)1 and Bi-(Te/Se)2 bonds, while the lone-pair (Te/Se) interactions are mainly responsible for the extremely low lattice thermal conductivity in the parallel direction. As a result of the enhanced power factor, suppressed bipolar conduction, and ultralow lattice thermal conductivity, a maximum ZT of 1.0 at 473 K has been received in the Bi2Te2.385Se0.6Cl0.015 sample.

Study of the Thermoelectric Properties of Bi2Te3/Sb2Te3 Core-Shell Heterojunction Nanostructures

Thermoelectric materials convert heat energy into electricity, hold promising capabilities for energy waste harvesting, and may be the future of sustainable energy utilization. In this work, we successfully synthesized core-shell Bi₂Te₃/Sb₂Te₃ (BTST) nanostructured heterojunctions via a two-step solution route. Samples with different Bi₂Te₃ core to Sb₂Te₃ shell ratios could be synthesized by controlling the reaction precursors. Scanning electron microscopy images show well-defined hexagonal nanoplates and the distinct interfaces between Bi₂Te₃ and Sb₂Te₃. The similarity of the area ratios with the precursor ratios indicates that the growth of the Sb₂Te₃ shell mostly took place on the lateral direction rather than the vertical. Transmission electron microscopy revealed the crystalline nature of the as-synthesized Bi₂Te₃ core and Sb₂Te₃ shell. Energy-dispersive X-ray spectroscopy verified the lateral growth of a Sb₂Te₃ shell on the Bi₂Te₃ core. Thermoelectric properties were measured on pellets obtained from powders via spark plasma sintering with two different directions, in-plane and out-of-plane, showing anisotropic properties due to the nanostructure alignment in the pellets. All samples showed a degenerate semiconducting character with the electrical resistivity increasing with the temperature. Starting from Sb₂Te₃, the electrical resistivity increases with the increase in amounts of Bi₂Te₃. Thermal conductivity is lowered due to the increase in interfaces and additional phonon scattering. We show that the out-of-plane direction of the BTST 1-3 sample (where 1-3 indicates the ratio of BT to ST) demonstrates a high Seebeck value of 145 μV/K at 500 K which may be attributed to an energy filtering effect across the heterojunction interfaces. The highest overall zT is observed for the BTST 1-3 sample in the out-of-plane direction at 500 K. The zT values increase continuously over the measured temperature range, indicating a probable higher value at increased temperatures.

Soft Organic Thermoelectric Materials: Principles, Current State of the Art and Applications

The enormous demand for waste heat utilization and burgeoning eco-friendly wearable materials has triggered huge interest in the development of thermoelectric materials that can harvest low-cost energy resources by converting waste heat to electricity efficiently. In particular, due to their high flexibility, nontoxicity, cost-effectivity, and promising applicability in various fields, organic thermoelectric materials are drawing more attention compared with their toxic, expensive, heavy, and brittle inorganic counterparts. Organic thermoelectric materials are approaching the figure of merit of the inorganic ones via the construction and optimization of unique transport pathways and device geometries. This review presents the recent development of the interdependence and decoupling principles of the thermoelectric efficiency parameters as well as the new achievements of high performance organic thermoelectric materials. Moreover, this review also discusses the advances in the thermoelectric devices with emphasis on their energy-related applications. It is believed that organic thermoelectric materials are emerging as green energy alternatives rivaling their conventional inorganic counterparts in the efficient and pure electricity harvesting from waste heat and solar thermal energy.

Removing the Oxygen-Induced Donor-like Effect for High Thermoelectric Performance in n-Type Bi2Te3-Based Compounds

Bismuth telluride-based alloys are the best performing thermoelectric materials near room temperature. Grain size refinement and nanostructuring are the core stratagems for improving thermoelectric and mechanical properties. However, the donor-like effect induced by grain size refinement strongly restricts the thermoelectric properties especially in the vicinity of room temperature. In this study, the formation mechanism for the donor-like effect in Bi₂Te₃-based compounds was revealed by synthesizing five batches of polycrystalline samples. We demonstrate that the donor-like effect in Bi₂Te₃-based compounds is strongly related to the vacancy defects (V_Bi^‴ and V_Te^···) induced by the fracturing process and oxygen in air for the first time. The oxygen-induced donor-like effect dramatically increases the carrier concentration from 2.5 × 10¹⁹ cm^-3 for the zone melting ingot and bulks sintered with powders ground under an inert atmosphere to 7.5 × 10¹⁹ cm^-3, which is largely beyond the optimum carrier concentration and seriously deteriorates the thermoelectric performance. Moreover, it is found that both avoiding exposure to air and eliminating the thermal vacancy defects (V_Bi^‴ and V_Te^···) via heat treatment before exposure to air can effectively remove the donor-like effect, producing almost the same carrier concentration and Seebeck coefficient as those of the zone melting ingot for these samples. Therefore, a defect equation of oxygen-induced donor-like effect was proposed and was further explicitly corroborated by positron annihilation measurement. With the removal of donor-like effect and improved texturing via multiple hot deformation (HD) processes, a maximum power factor of 3.5 mW m^-1 K^-2 and a reproducible maximum ZT value of 1.01 near room temperature are achieved. This newly proposed defect equation of the oxygen-induced donor-like effect will provide a guideline for developing higher-performance V₂VI₃ polycrystalline materials for near-room-temperature applications.

Enhancing the Thermoelectric and Mechanical Properties of Bi0.5Sb1.5Te3 Modulated by the Texture and Dense Dislocation Networks

Bi₂Te₃-based materials are dominating thermoelectrics for almost all of the room-temperature applications. To meet the future demands, both their thermoelectric (TE) and mechanical properties need to be further improved, which are the requisite for efficient TE modules applied in areas such as reliable micro-cooling. The conventional zone melting (ZM) and powder metallurgy (PM) methods fall short in preparing Bi₂Te₃-based alloys, which have both a highly textured structure for high TE properties and a fine-grained microstructure for high mechanical properties. Herein, a mechanical exfoliation combined with spark plasma sintering (ME-SPS) method is developed to prepare Bi_0.5Sb_1.5Te₃ with highly improved mechanical properties (correlated mainly to the dislocation networks), as well as significantly improved thermoelectric properties (correlated mainly to the texture structure). In the method, both the dislocation density and the orientation factor (F) can be tuned by the sintering pressure. At a sintering pressure of 20 MPa, an exceptional F of up to 0.8 is retained, leading to an excellent power factor of 4.8 mW m^-1 K^-2 that is much higher than that of the PM polycrystalline. Meanwhile, the method can readily induce high-density dislocations (up to ∼10¹⁰ cm^-2), improving the mechanical properties and reducing the lattice thermal conductivity as compared to the ZM ingot. In the exfoliated and then sintered (20 MPa) sample, the figure-of-merit ZT = 1.2 (at 350 K), which has increased by about ∼20%, and the compressive strength has also increased by ∼20%, compared to those of the ZM ingot, respectively. These results demonstrate that the ME-SPS method is highly effective in preparing high-performance Bi₂Te₃-based alloys, which are critical for TE modules in commercial applications at near-room temperature.

Zn-Induced Defect Complexity for the High Thermoelectric Performance of n-Type PbTe Compounds

Although defect engineering is the core strategy to improve thermoelectric properties, there are limited methods to effectively modulate the designed defects. Herein, we demonstrate that a high ZT value of 1.36 at 775 K and a high average ZT value of 0.99 in the temperature range from 300 to 825 K are realized in Zn-containing PbTe by designing complex defects. By combining first-principles calculations and experiments, we show that Zn atoms occupy both Pb sites and interstitial sites in PbTe and couple with each other. The contraction stress induced via substitutional Zn on Pb sites alleviates the swelling stress by Zn atoms occupying the interstitial sites and promotes the solubility of interstitial Zn atoms in the structure of PbTe. The stabilization of Zn impurity as a complex defect extends the region of PbTe phase stability toward Pb_0.995Zn_0.02Te, while the solid solution region in the other direction of the ternary phase diagram is much smaller. The evolution of defects in PbTe was further explicitly corroborated by aberration-corrected scanning transmission electron microscopy (Cs-corrected STEM) and positron annihilation measurement. The Zn atoms compensate the Pb vacancies (V_Pb) and Zn interstitials (Zn_i) significantly improve the electron concentration, producing a high carrier mobility of 1467.7 cm² V^-1 s^-1 for the Pb_0.995Zn_0.02Te sample. A high power factor of 4.11 mW m^-1 K^-2 is achieved for the Pb_0.995Zn_0.02Te sample at 306 K. This work provides new insights into understanding the nature and evolution of the defects in n-type PbTe as well as improving the electronic and thermal transport properties toward higher thermoelectric performance.

Realize High Thermoelectric Properties in n-Type Bi2Te2.7Se0.3/Y2O3 Nanocomposites by Constructing Heterointerfaces

Due to the excellent thermoelectric performance, bismuth telluride (Bi₂Te₃) compounds are highly promising for the thermoelectric conversion in the room temperature range. However, the inferior thermoelectric performance of the n-type leg severely restricts the applications of Bi₂Te₃-based thermoelectric couples. Herein, n-type Bi₂Te_2.7Se_0.3 (BTS)-based thermoelectric materials incorporated with nanosized Y₂O₃ (0.5-3 wt %) are prepared and their thermoelectric properties are systematically studied. The dramatically improved thermoelectric performance is ascribed to the realization of a multiscale feature of Y₂O₃ nanoparticle (NP)-induced interfacial decorations distributed along grain boundaries, which creates massive BTS/Y₂O₃ interfaces for the manipulation of carrier and phonon transport properties. The geometric phase analysis is employed to further confirm the condition of local strain in the BTS composite incorporated with Y₂O₃ NPs. Due to the presence of heterointerfaces and high density of dislocations in BTS matrices, the minimum lattice thermal conductivity (κ_l) of the nanocomposites (NCs) is dramatically suppressed from 0.76 to 0.37 W m^-1 K^-1. With the incorporation of 3 wt % Y₂O₃ NPs, the Vickers hardness of the BTS/Y₂O₃ NC is increased by about 32%. Overall, the BTS + 1.5 wt % Y₂O₃ NC maintains excellent thermoelectric properties (ZT_ave = 1.1) in the whole operative temperature range (300-500 K). The present strategy of implementing high-density heterogeneous interfaces by Y₂O₃ NP addition offers an applicable pathway for fabricating high-performance thermoelectric materials with both optimized thermoelectric properties and mechanical properties.

SnSe, the rising star thermoelectric material: a new paradigm in atomic blocks, building intriguing physical properties

Thermoelectric (TE) materials, which enable direct energy conversion between waste heat and electricity, have witnessed enormous and exciting developments over last several decades due to innovative breakthroughs both in materials and the synergistic optimization of structures and properties. Among the promising state-of-the-art materials for next-generation thermoelectrics, tin selenide (SnSe) has attracted rapidly growing research interest for its high TE performance and the intrinsic layered structure that leads to strong anisotropy. Moreover, complex interactions between lattice, charge, and orbital degrees of freedom in SnSe make up a large phase space for the optimization of its TE properties via the simultaneous tuning of structural and chemical features. Various techniques, especially advanced electron microscopy (AEM), have been devoted to exploring these critical multidiscipline correlations between TE properties and microstructures. In this review, we first focus on the intrinsic layered structure as well as the extrinsic structural "imperfectness" of various dimensions in SnSe as studied by AEM. Based on these characterization results, we give a comprehensive discussion on the current understanding of the structure-property relationship. We then point out the challenges and opportunities as provided by modern AEM techniques toward a deeper knowledge of SnSe based on electronic structures and lattice dynamics at the nanometer or even atomic scale, for example, the measurements of local charge and electric field distribution, phonon vibrations, bandgap, valence state, temperature, and resultant TE effects.

Excellent thermoelectric performance achieved in Bi2Te3/Bi2S3@Bi nanocomposites

A Bi2Te3/Bi2S3@Bi nanocomposite with a network microstructure was successfully synthesized via a hydrothermal method and spark plasma sintering. This composite was constructed from Bi2Te3 nanoparticles and Bi2S3@Bi nanowires, and its network structure is beneficial for obtaining excellent thermoelectric performance. A ZT peak of 1.2 at 450 K was realized for the nanocomposite sample.

Advanced Thermoelectric Design: From Materials and Structures to Devices

The long-standing popularity of thermoelectric materials has contributed to the creation of various thermoelectric devices and stimulated the development of strategies to improve their thermoelectric performance. In this review, we aim to comprehensively summarize the state-of-the-art strategies for the realization of high-performance thermoelectric materials and devices by establishing the links between synthesis, structural characteristics, properties, underlying chemistry and physics, including structural design (point defects, dislocations, interfaces, inclusions, and pores), multidimensional design (quantum dots/wires, nanoparticles, nanowires, nano- or microbelts, few-layered nanosheets, nano- or microplates, thin films, single crystals, and polycrystalline bulks), and advanced device design (thermoelectric modules, miniature generators and coolers, and flexible thermoelectric generators). The outline of each strategy starts with a concise presentation of their fundamentals and carefully selected examples. In the end, we point out the controversies, challenges, and outlooks toward the future development of thermoelectric materials and devices. Overall, this review will serve to help materials scientists, chemists, and physicists, particularly students and young researchers, in selecting suitable strategies for the improvement of thermoelectrics and potentially other relevant energy conversion technologies.

Tuning the thermoelectric response of silicene nanoribbons with vacancies

In this work, we present a thorough study of the thermoelectric properties of silicene nanoribbons in the presence of a random distribution of atomic vacancies. By using a linear approach within the Landauer formalism, we calculate phonon and electron thermal conductances, the electric conductance, the Seebeck coefficient and the figure of merit of the nanoribbons. We found a sizable reduction of the phonon thermal conductance as a function of the vacancy concentration over a wide range of temperature. At the same time, the electric properties are not severely deteriorated, leading to an overall remarkable thermoelectric efficiency. We conclude that the incorporation of vacancies paves the way for designing better and more efficient nanoscale thermoelectric devices.

Solvothermal synthesis of n-type Bi2(SexTe1-x)3 nanoplates for high-performance thermoelectric thin films on flexible substrates

To improve thermoelectric performance of materials, the utilization of low-dimensional materials with a multi-alloy system is a promising approach. We report on the enhanced thermoelectric properties of n-type Bi₂(Se_xTe_1-x)₃ nanoplates using solvothermal synthesis by tuning the composition of selenium (Se). Variation of the Se composition within nanoplates is demonstrated using X-ray diffraction and electron probe microanalysis. The calculated lattice parameters closely followed Vegard's law. However, when the Se composition was extremely high, an impurity phase was observed. At a reduced Se composition, regular-hexagonal-shaped nanoplates with a size of approximately 500 nm were produced. When the Se composition was increased, the shape distribution became random with sizes more than 5 μm. To measure the thermoelectric properties, nanoplate thin films (NPTs) were formed on a flexible substrate using drop-casting, followed by thermal annealing. The resulting NPTs sufficiently adhered to the substrate during the bending condition. The electrical conductivity of the NPTs increased with an increase in the Se composition, but it rapidly decreased at an extremely high Se composition because of the presence of the impurity phase. As a result, the Bi₂(Se_xTe_1-x)₃ NPTs exhibited the highest power factor of 4.1 μW/(cm∙K²) at a Se composition of x = 0.75. Therefore, it was demonstrated that the thermoelectric performance of Bi₂(Se_xTe_1-x)₃ nanoplates can be improved by tuning the Se composition.

High-Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

Tin selenide (SnSe) is one of the most promising candidates to realize environmentally friendly, cost-effective, and high-performance thermoelectrics, derived from its outstanding electrical transport properties by appropriate bandgaps and intrinsic low lattice thermal conductivity from its anharmonic layered structure. Advanced aqueous synthesis possesses various unique advantages including convenient morphology control, exceptional high doping solubility, and distinctive vacancy engineering. Considering that there is an urgent demand for a comprehensive survey on the aqueous synthesis technique applied to thermoelectric SnSe, herein, a thorough overview of aqueous synthesis, characterization, and thermoelectric performance in SnSe is provided. New insights into the aqueous synthesis-based strategies for improving the performance are provided, including vacancy synergy, crystallization design, solubility breakthrough, and local lattice imperfection engineering, and an attempt to build the inherent links between the aqueous synthesis-induced structural characteristics and the excellent thermoelectric performance is presented. Furthermore, the significant advantages and potentials of an aqueous synthesis route for fabricating SnSe-based 2D thermoelectric generators, including nanorods, nanobelts, and nanosheets, are also discussed. Finally, the controversy, strategy, and outlook toward future enhancement of SnSe-based thermoelectric materials are also provided. This Review guides the design of thermoelectric SnSe with high performance and provides new perspectives as a reference for other thermoelectric systems.

Few-layer hexagonal bismuth telluride (Bi2Te3) nanoplates with high-performance UV-Vis photodetection

It is widely known that the excellent intrinsic electronic and optoelectronic advantages of bismuthene and tellurene make them attractive for applications in transistors and logic and optoelectronic devices. However, their poor optoelectronic performances, such as photocurrent density and photoresponsivity, under ambient conditions severely hinder their practical application. To satisfy the demand of high-performance optoelectronic devices and topological insulators, bismuth telluride nanoplates (Bi2Te3 NPs) with different sizes, successfully synthesized by a solvothermal approach have been, for the first time, employed to fabricate a working electrode for photoelectrochemical (PEC)-type photodetection. It is demonstrated that the as-prepared Bi2Te3 NP-based photodetectors exhibit remarkably improved photocurrent density, enhanced photoresponsivity, and faster response time and recovery time in the UV-Vis region, compared to bismuthene and tellurene-based photodetectors. Additionally, the PEC stability measurements show that Bi2Te3 NPs have a comparable long-term stability for on/off switching behaviour for the bismuthene and tellurene-based photodetectors. Therefore, it is anticipated that the present work can provide fundamental acknowledgement of the optoelectronic performance of a PEC-type Bi2Te3 NP-based photodetector, shedding light on new designs of high-performance topological insulator-based optoelectronic devices.

Promising and Eco-Friendly Cu2 X-Based Thermoelectric Materials: Progress and Applications

Due to the nature of their liquid-like behavior and high dimensionless figure of merit, Cu₂ X (X = Te, Se, and S)-based thermoelectric materials have attracted extensive attention. The superionicity and Cu disorder at the high temperature can dramatically affect the electronic structure of Cu₂ X and in turn result in temperature-dependent carrier-transport properties. Here, the effective strategies in enhancing the thermoelectric performance of Cu₂ X-based thermoelectric materials are summarized, in which the proper optimization of carrier concentration and minimization of the lattice thermal conductivity are the main focus. Then, the stabilities, mechanical properties, and module assembly of Cu₂ X-based thermoelectric materials are investigated. Finally, the future directions for further improving the energy conversion efficiency of Cu₂ X-based thermoelectric materials are highlighted.

Modelling a Segmented Skutterudite-Based Thermoelectric Generator to Achieve Maximum Conversion Efficiency

Thermoelectric generator (TEG) modules generally have a low conversion efficiency. Among the reasons for the lower conversion efficiency is thermoelectric (TE) material mismatch. Hence, it is imperative to carefully select the TE material and optimize the design before any mass-scale production of the modules. Here, with the help of Comsol-Multiphysics (5.3) software, TE materials were carefully selected and the design was optimized to achieve a higher conversion efficiency. An initial module simulation (32 couples) of unsegmented skutterudite Ba0.1Yb0.2Fe0.1Co3.9Sb12 (n-type) and Ce0.5Yb0.5Fe3.25Co0.75Sb12 (p-type) TE materials was carried out. At the temperature gradient T∆ = 500 K, a maximum simulated conversion efficiency of 9.2% and a calculated efficiency of 10% were obtained. In optimization via segmentation, the selection of TE materials, considering compatibility factor (s) and ZT, was carefully done. On the cold side, Bi2Te3 (n-type) and Sb2Te3 (p-type) TE materials were added as part of the segmentation, and at the same temperature gradient, an open circuit voltage of 6.2 V matched a load output power of 45 W, and a maximum simulated conversion efficiency of 15.7% and a calculated efficiency of 17.2% were achieved. A significant increase in the output characteristics of the module shows that the segmentation is effective. The TEG shows promising output characteristics.

High Porosity in Nanostructured n-Type Bi2Te3 Obtaining Ultralow Lattice Thermal Conductivity

Porous structure possesses full potentials to develop high-performance thermoelectric materials with low lattice thermal conductivity. In this study, the n-type porous nanostructured Bi₂Te₃ pellet is fabricated by sintering Bi₂Te₃ nanoplates synthesized with a facile solvothermal method. With adequate sublimations of Bi₂TeO₅ during the spark plasma sintering, homogeneously distributed pores and dense grain boundaries are successfully introduced into the Bi₂Te₃ matrix, causing strong phonon scatterings, from which an ultralow lattice thermal conductivity of <0.1 W m^-1 K^-1 is achieved in the porous nanostructured Bi₂Te₃ pellet. With the well-maintained decent electrical performance, a power factor of 10.57 μW cm^-1 K^-2 at 420 K, as well as the reduced lattice thermal conductivity, secured a promising zT value of 0.97 at 420 K, which is among the highest values reported for pure n-type Bi₂Te₃. This study provides the insight of realizing ultralow lattice thermal conductivity by synergistic phonon scatterings of pores and nanostructure in the n-type Bi₂Te₃-based thermoelectric materials.

Thermoelectric Materials—Strategies for Improving Device Performance and Its Medical Applications

Thermoelectrics, in particular solid-state conversion of heat to electricity and vice versa, is expected to be a key energy harvesting and temperature management solution in coming years. There has been a resurgence in the search for new materials for advanced thermoelectric energy conversion applications and to enhance the properties of existing materials. In this paper, we review recent efforts on improving figure-of-merit (ZT) through alloying and nano structuring. As heatsink characteristics dictate the performance of thermoelectric modules, various types of heatsink designs has been investigated. Several reported strategies for improving ZT are critically assessed. A notable increase in figure-of-merit of thermoelectric materials (TE) has opened up new areas of applications especially in the medical field. Peltier cooling devices are widely employed for patient core temperature control, skin cooling, medical device and laboratory equipment cooling. Application of these devices in the medical field both in temperature control and power generation has been studied in detail. It is envisioned that this study will provide profound knowledge on the thermoelectric based materials and its role in medical applications.

Flexible Thermoelectric Materials and Generators: Challenges and Innovations

The urgent need for ecofriendly, stable, long-lifetime power sources is driving the booming market for miniaturized and integrated electronics, including wearable and medical implantable devices. Flexible thermoelectric materials and devices are receiving increasing attention, due to their capability to convert heat into electricity directly by conformably attaching them onto heat sources. Polymer-based flexible thermoelectric materials are particularly fascinating because of their intrinsic flexibility, affordability, and low toxicity. There are other promising alternatives including inorganic-based flexible thermoelectrics that have high energy-conversion efficiency, large power output, and stability at relatively high temperature. Herein, the state-of-the-art in the development of flexible thermoelectric materials and devices is summarized, including exploring the fundamentals behind the performance of flexible thermoelectric materials and devices by relating materials chemistry and physics to properties. By taking insights from carrier and phonon transport, the limitations of high-performance flexible thermoelectric materials and the underlying mechanisms associated with each optimization strategy are highlighted. Finally, the remaining challenges in flexible thermoelectric materials are discussed in conclusion, and suggestions and a framework to guide future development are provided, which may pave the way for a bright future for flexible thermoelectric devices in the energy market.

Precision Interface Engineering of an Atomic Layer in Bulk Bi2Te3 Alloys for High Thermoelectric Performance

Grafting nanotechnology on thermoelectric materials leads to significant advances in their performance. Creation of structural defects including nano-inclusion and interfaces via nanostructuring achieves higher thermoelectric efficiencies. However, it is still challenging to optimize the nanostructure via conventional fabrication techniques. The thermal instability of nanostructures remains an issue in the reproducibility of fabrication processes and long-term stability during operation. This work presents a versatile strategy to create numerous interfaces in a thermoelectric material via an atomic-layer deposition (ALD) technique. An extremely thin ZnO layer was conformally formed via ALD over the Bi_0.4Sb_1.6Te₃ powders, and numerous heterogeneous interfaces were generated from the formation of Bi_0.4Sb_1.6Te₃-ZnO core-shell structures even after high-temperature sintering. The incorporation of ALD-grown ZnO into the Bi_0.4Sb_1.6Te₃ matrix blocks phonon propagation and also provides tunability in electronic carrier density via impurity doping at the heterogeneous grain boundaries. The exquisite control in the ALD cycles provides a high thermoelectric performance of zT = 1.50 ± 0.15 (at 329-360 K). Specifically, ALD is an industry compatible technique that allows uniform and conformal coating over large quantities of powders. The study is promising in terms of the mass production of nanostructured thermoelectric materials with considerable improvements in performance via an industry compatible and reproducible route.

High performance broadband bismuth telluride tetradymite topological insulator photodiode

A small bulk gap and the presence of Dirac electrons due to conductive surface states make tetradymite topological insulators promising candidates for optoelectronic devices. In this work, we demonstrate a highly responsive Bi₂Te₃-Si heterostructure photodiode. The thermally evaporated Bi₂Te₃ film, exhibiting a nanocrystalline nature, shows p-type doping behavior due to bismuth vacancies. As a result of the work function difference between Bi₂Te₃ and p-type Si, charge transfer occurs and a Schottky barrier is formed. Using the thermionic emission model, the barrier height (Φ_B) is extracted to be ∼0.405 eV. For minimizing the effect of extrinsic defects, the photodiodes were capped with graphene or Si₃N₄. Since graphene acts as an efficient photoexcited carrier collector, the graphene capped device outperforms the Si₃N₄ capped device. The higher quality Bi₂Te₃ nanocrystalline film of the Si₃N₄ capped photodiode contributes to a one-order-of-magnitude improvement in responsivity at 1550 nm wavelength, as compared to the graphene capped photodiode. The Si₃N₄ capped photodiode shows photoresponse even at zero bias for 1550 nm wavelength. Built-in potential due to charge transfer at the interface of Bi₂Te₃ and Si capped with a graphene electrode exhibits the highest responsivity (8.9 A W^-1). Broadband photodetection is observed in both types of photodiodes.

Employing a Bifunctional Molybdate Precursor To Grow the Highly Crystalline MoS2 for High-Performance Field-Effect Transistors

Growth of the large-sized and high-quality MoS₂ single crystals for high-performance low-power electronic applications is an important step to pursue. Despite the significant improvement made in minimizing extrinsic MoS₂ contact resistance based on interfacial engineering of the devices, the electron mobility of field-effect transistors (FETs) made of a synthetic monolayer MoS₂ is yet far below the expected theoretical values, implying that the MoS₂ crystal quality needs to be further improved. Here, we demonstrate the high-performance two-terminal MoS₂ FETs with room-temperature electron mobility up to ∼90 cm² V^-1 s^-1 based on the sulfurization growth of the bifunctional precursor, sodium molybdate dihydrate. This unique transition-metal precursor, serving as both the crystalline Mo source and seed promotor (sodium), could facilitate the lateral growth of the highly crystalline monolayer MoS₂ crystals (edge length up to ∼260 μm). Substrate surface treatment with oxygen plasma prior to the deposition of the Mo precursor is fundamental to increase the wettability between the Mo source and the substrate, promoting the thinning and coalescence of the source clusters during the growth of large-sized MoS₂ single crystals. The control of growth temperature is also an essential step to grow a strictly monolayer MoS₂ crystal. A proof-of-concept for thermoelectric device integration utilizing monolayer MoS₂ sheds light on its potential in low-voltage and self-powered electronics.

Thermoelectric GeTe with Diverse Degrees of Freedom Having Secured Superhigh Performance

Driven by the ability to harvest waste heat into reusable electricity and the exclusive role of serving as the power generator for deep spacecraft, intensive endeavors are dedicated to enhancing the thermoelectric performance of ecofriendly materials. Herein, the most recent progress in superhigh-performance GeTe-based thermoelectric materials is reviewed with a focus on the crystal structures, phase transitions, resonant bondings, multiple valance bands, and phonon dispersions. These features diversify the degrees of freedom to tune the transport properties of electrons and phonons for GeTe. On the basis of the optimized carrier concentration, strategies of alignment of multiple valence bands and density-of-state resonant distortion are employed to further enhance the thermoelectric performance of GeTe-based materials. To decrease the thermal conductivity, methods of strengthening intrinsic phonon-phonon interactions and introducing various lattice imperfections as scattering centers are highlighted. An overview of thermoelectric devices assembled from GeTe-based thermoelectric materials is then presented. In conclusion, possible future directions for developing GeTe in thermoelectric applications are proposed. The achieved high thermoelectric performance in GeTe-based thermoelectric materials with rationally established strategies can act as a reference for broader materials to tailor their thermoelectric performance.

Synthesis of M-doped (M = Ag, Cu, In) Bi2Te3 nanoplates via a solvothermal method and cation exchange reaction

Cation-doped Bi₂Te₃ nanoplates were prepared via a cation exchange reaction between a cation solution and a Bi₂Te₃ nanoplate colloid.

Facile fabrication of one-dimensional Te/Cu2Te nanorod composites with improved thermoelectric power factor and low thermal conductivity

In this study, Te/Cu2Te nanorod composites were synthesized using various properties of Cu2Te, and their thermoelectric properties were investigated. The nanorods were synthesized through a solution phase mixing process, using polyvinylpyrrolidone (PVP). With increasing Cu2Te content, the composites exhibited a reduced Seebeck coefficient and enhanced electrical conductivity. These characteristic changes were due to the high electrical conductivity and low Seebeck coefficient of Cu2Te. The composite containing 30 wt.% of Cu2Te nanorods showed the maximum power factor (524.6 μV/K at room temperature). The two types of nanorods were assembled into a 1D nanostructure, and with this structure, thermal conductivity decreased owing to the strong phonon scattering effect. This nanorod composite had a dramatically improved ZT value of 0.3, which was ~545 times larger than that of pristine Te nanorods.

High Thermoelectric Performance in Crystallographically Textured n-Type Bi2Te3- xSe x Produced from Asymmetric Colloidal Nanocrystals

In the present work, we demonstrate crystallographically textured n-type Bi₂Te_{3- x}Se _x nanomaterials with exceptional thermoelectric figures of merit produced by consolidating disk-shaped Bi₂Te_{3- x}Se _x colloidal nanocrystals (NCs). Crystallographic texture was achieved by hot pressing the asymmetric NCs in the presence of an excess of tellurium. During the hot press, tellurium acted both as lubricant to facilitate the rotation of NCs lying close to normal to the pressure axis and as solvent to dissolve the NCs approximately aligned with the pressing direction, which afterward recrystallize with a preferential orientation. NC-based Bi₂Te_{3- x}Se _x nanomaterials showed very high electrical conductivities associated with large charge carrier concentrations, n. We hypothesize that such large n resulted from the presence of an excess of tellurium during processing, which introduced a high density of donor Te_Bi antisites. Additionally, the presence in between grains of traces of elemental Te, a narrow band gap semiconductor with a work function well below Bi₂Te_{3- x}Se _x, might further contribute to increase n through spillover of electrons, while at the same time blocking phonon propagation and hole transport through the nanomaterial. NC-based Bi₂Te_{3- x}Se _x nanomaterials were characterized by very low thermal conductivities in the pressing direction, which resulted in ZT values up to 1.31 at 438 K in this direction. This corresponds to a ca. 40% ZT enhancement from commercial ingots. Additionally, high ZT values were extended over wider temperature ranges due to reduced bipolar contribution to the Seebeck coefficient and the thermal conductivity. Average ZT values up to 1.15 over a wide temperature range, 320 to 500 K, were measured, which corresponds to a ca. 50% increase over commercial materials in the same temperature range. Contrary to most previous works, highest ZT values were obtained in the pressing direction, corresponding to the c crystallographic axis, due to the predominance of the thermal conductivity reduction over the electrical conductivity difference when comparing the two crystal directions.

Thermoelectric Performance of Sb2Te3-Based Alloys is Improved by Introducing PN Junctions

Interface engineering has been demonstrated to be an effective strategy for enhancing the thermoelectric (TE) performance of materials. However, a very typical interface in semiconductors, that is, the PN junction (PNJ), is scarcely adopted by the thermoelectrical community because of the coexistence of holes and electrons. Interestingly, our explorative results provide a definitively positive case that appropriate PNJs are able to enhance the TE performance of p-type Sb₂Te₃-based alloys. Specifically, owing to the formation of the charge-depletion layer and built-in electric field, the carrier concentration and transport can be optimized and thus the power factor is improved and the electronic thermal conductivity is decreased. Meanwhile, PNJs provide scattering centers for phonons, leading to a reduced lattice thermal conductivity. Consequently, the p-type (Bi₂Te₃)_0.15-(Sb₂Te₃)_0.85 composites comprising PNJs achieve a ∼131% improvement of the ZT value compared with the pure Sb₂Te₃. The increased ZT demonstrates the feasibility of improving the TE properties by introducing PNJs, which will open a new and effective avenue for designing TE alloys with high performance.

Flexible n-type thermoelectric composite films with enhanced performance through interface engineering and post-treatment

Flexible thermoelectric (TE) materials, which are devices that convert thermal gradients to electrical energy, have attracted interest for practical energy-harvesting/recovery applications. However, as compared with p-type materials, the progress on the development of n-type TE flexible materials has been slow due to difficulties involved in n-type doping techniques. This study used high mobility carbon nanotubes (CNTs) to a uniformly mixed hybrid-composite, resulting in an enhanced power factor by increasing electrical conductivity. The energy filtering effect and stoichiometric composition of the material used, bismuth telluride (Bi₂Te₃) correlated to a significant enhancement in TE performance, with a power factor of 225.9 μW m^-1K^-2 at room temperature: a factor of 65 higher than as-fabricated composite film. This paper describes a simplified synthesis for the preparation of the composite film that eliminates time-intensive and cost-prohibitive processing, traditionally seen during extrusion and dicing inorganic manufacturing. The resulting post-annealed composite film consisting of Bi₂Te₃ nanowire and CNTs demonstrate a promising candidate for material that can be used for an n-type TE device that has improved energy conversion efficiency.

Realizing zT of 2.3 in Ge1-x-y Sbx Iny Te via Reducing the Phase-Transition Temperature and Introducing Resonant Energy Doping

GeTe with rhombohedral-to-cubic phase transition is a promising lead-free thermoelectric candidate. Herein, theoretical studies reveal that cubic GeTe has superior thermoelectric behavior, which is linked to (1) the two valence bands to enhance the electronic transport coefficients and (2) stronger enharmonic phonon-phonon interactions to ensure a lower intrinsic thermal conductivity. Experimentally, based on Ge_1-x Sb_x Te with optimized carrier concentration, a record-high figure-of-merit of 2.3 is achieved via further doping with In, which induces the distortion of the density of states near the Fermi level. Moreover, Sb and In codoping reduces the phase-transition temperature to extend the better thermoelectric behavior of cubic GeTe to low temperature. Additionally, electronic microscopy characterization demonstrates grain boundaries, a high-density of stacking faults, and nanoscale precipitates, which together with the inevitable point defects result in a dramatically decreased thermal conductivity. The fundamental investigation and experimental demonstration provide an important direction for the development of high-performance Pb-free thermoelectric materials.

A p-type multi-wall carbon nanotube/Te nanorod composite with enhanced thermoelectric performance

In this study, multi-walled carbon nanotube (MWCNT)/tellurium (Te) nanorod composites with various MWCNT contents are prepared and their thermoelectric properties are investigated. The composite samples are prepared by mixing Te nanorods with surface-treated MWCNTs. Te nanorods are synthesized by solution phase mixing using polyvinylpyrrolidone (PVP). The MWCNTs used in this study are surface-treated with a solution consisting of H2SO4 and HNO3. With increasing MWCNT content, the composite samples exhibit a reduction in the Seebeck coefficient and enhanced electrical conductivity. The maximum power factor of 5.53 μW m K-2 is observed at 2% MWCNT at room temperature. The thermal conductivity of the composite reduced after the introduction of MWCNTs into the Te nanorod matrix; this is attributed to the generation of heterostructured interfaces between MWCNTs and the Te nanorods. At room temperature, the composites containing 2% MWCNTs exhibited the maximum thermoelectric figure of merit (ZT), which is ∼3.91 times larger than that of pure Te nanorods.