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Abstract
Efforts to design devices emulating complex cognitive abilities and response processes of biological systems have long been a coveted goal. Recent advancements in flexible electronics, mirroring human tissue's mechanical properties, hold significant promise. Artificial neuron devices, hinging on flexible artificial synapses, bioinspired sensors, and actuators, are meticulously engineered to mimic the biological systems. However, this field is in its infancy, requiring substantial groundwork to achieve autonomous systems with intelligent feedback, adaptability, and tangible problem-solving capabilities. This review provides a comprehensive overview of recent advancements in artificial neuron devices. It starts with fundamental principles of artificial synaptic devices and explores artificial sensory systems, integrating artificial synapses and bioinspired sensors to replicate all five human senses. A systematic presentation of artificial nervous systems follows, designed to emulate fundamental human nervous system functions. The review also discusses potential applications and outlines existing challenges, offering insights into future prospects. We aim for this review to illuminate the burgeoning field of artificial neuron devices, inspiring further innovation in this captivating area of research.
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Affiliation(s)
- Ke He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Cong Wang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yongli He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Jiangtao Su
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiaodong Chen
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore 636921, Singapore
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Park Y, Ro YG, Shin Y, Park C, Na S, Chang Y, Ko H. Multi-Layered Triboelectric Nanogenerators with Controllable Multiple Spikes for Low-Power Artificial Synaptic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2304598. [PMID: 37888859 PMCID: PMC10754122 DOI: 10.1002/advs.202304598] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2023] [Revised: 08/20/2023] [Indexed: 10/28/2023]
Abstract
In the domains of wearable electronics, robotics, and the Internet of Things, there is a demand for devices with low power consumption and the capability of multiplex sensing, memory, and learning. Triboelectric nanogenerators (TENGs) offer remarkable versatility in this regard, particularly when integrated with synaptic transistors that mimic biological synapses. However, conventional TENGs, generating only two spikes per cycle, have limitations when used in synaptic devices requiring repetitive high-frequency gating signals to perform various synaptic plasticity functions. Herein, a multi-layered micropatterned TENG (M-TENG) consisting of a polydimethylsiloxane (PDMS) film and a composite film that includes 1H,1H,2H,2H-perfluorooctyltrichlorosilane/BaTiO3 /PDMS are proposed. The M-TENG generates multiple spikes from a single touch by utilizing separate triboelectric charges at the multiple friction layers, along with a contact/separation delay achieved by distinct spacers between layers. This configuration allows the maximum triboelectric output charge of M-TENG to reach up to 7.52 nC, compared to 3.69 nC for a single-layered TENG. Furthermore, by integrating M-TENGs with an organic electrochemical transistor, the spike number multiplication property of M-TENGs is leveraged to demonstrate an artificial synaptic device with low energy consumption. As a proof-of-concept application, a robotic hand is operated through continuous memory training under repeated stimulations, successfully emulating long-term plasticity.
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Affiliation(s)
- Yong‐Jin Park
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)50, UNIST‐gilUlsan44919Republic of Korea
| | - Yun Goo Ro
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)50, UNIST‐gilUlsan44919Republic of Korea
| | - Young‐Eun Shin
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)50, UNIST‐gilUlsan44919Republic of Korea
| | - Cheolhong Park
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)50, UNIST‐gilUlsan44919Republic of Korea
| | - Sangyun Na
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)50, UNIST‐gilUlsan44919Republic of Korea
| | - Yoojin Chang
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)50, UNIST‐gilUlsan44919Republic of Korea
| | - Hyunhyub Ko
- School of Energy and Chemical EngineeringUlsan National Institute of Science and Technology (UNIST)50, UNIST‐gilUlsan44919Republic of Korea
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Ran Y, Lu W, Wang X, Qin Z, Qin X, Lu G, Hu Z, Zhu Y, Bu L, Lu G. High-performance asymmetric electrode structured light-stimulated synaptic transistor for artificial neural networks. MATERIALS HORIZONS 2023; 10:4438-4451. [PMID: 37489257 DOI: 10.1039/d3mh00775h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/26/2023]
Abstract
Photonics neuromorphic computing shows great prospects due to the advantages of low latency, low power consumption and high bandwidth. Transistors with asymmetric electrode structures are receiving increasing attention due to their low power consumption, high optical response, and simple preparation technology. However, intelligent optical synapses constructed by asymmetric electrodes are still lacking systematic research and mechanism analysis. Herein, we present an asymmetric electrode structure of the light-stimulated synaptic transistor (As-LSST) with a bulk heterojunction as the semiconductor layer. The As-LSST exhibits superior electrical properties, photosensitivity and multiple biological synaptic functions, including excitatory postsynaptic currents, paired-pulse facilitation, and long-term memory. Benefitting from the asymmetric electrode configuration, the devices can operate under a very low drain voltage of 1 × 10-7 V, and achieve an ultra-low energy consumption of 2.14 × 10-18 J per light stimulus event. Subsequently, As-LSST implemented the optical logic function and associative learning. Utilizing As-LSST, an artificial neural network (ANN) with ultra-high recognition rate (over 97.5%) of handwritten numbers was constructed. This work presents an easily-accessible concept for future neuromorphic computing and intelligent electronic devices.
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Affiliation(s)
- Yixin Ran
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Wanlong Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Zongze Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Xinsu Qin
- School of Chemistry, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710049, China
| | - Guanyu Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Zhen Hu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Yuanwei Zhu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
| | - Laju Bu
- School of Chemistry, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710049, China
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi Province, 710054, China.
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Bak J, Kim S, Park K, Yoon J, Yang M, Kim UJ, Hosono H, Park J, You B, Kwon O, Cho B, Park SW, Hahm MG, Lee M. Reinforcing Synaptic Plasticity of Defect-Tolerant States in Alloyed 2D Artificial Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:39539-39549. [PMID: 37614002 DOI: 10.1021/acsami.3c07578] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Abstract
While two-dimensional (2D) materials possess the desirable future of neuromorphic computing platforms, unstable charging and de-trapping processes, which are inherited from uncontrollable states, such as the interface trap between nanocrystals and dielectric layers, can deteriorate the synaptic plasticity in field-effect transistors. Here, we report a facile and effective strategy to promote artificial synaptic devices by providing physical doping in 2D transition-metal dichalcogenide nanomaterials. Our experiments demonstrate that the introduction of niobium (Nb) into 2D WSe2 nanomaterials produces charge trap levels in the band gap and retards the decay of the trapped charges, thereby accelerating the artificial synaptic plasticity by encouraging improved short-/long-term plasticity, increased multilevel states, lower power consumption, and better symmetry and asymmetry ratios. Density functional theory calculations also proved that the addition of Nb to 2D WSe2 generates defect tolerance levels, thereby governing the charging and de-trapping mechanisms of the synaptic devices. Physically doped electronic synapses are expected to be a promising strategy for the development of bioinspired artificial electronic devices.
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Affiliation(s)
- Jina Bak
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Seunggyu Kim
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Kyumin Park
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Jeechan Yoon
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Mino Yang
- Korea Basic Science Institute Seoul, 145 anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Un Jeong Kim
- Advanced Sensor Lab, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi 16678, Republic of Korea
| | - Hideo Hosono
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
| | - Jihyang Park
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Bolim You
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Ojun Kwon
- Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Byungjin Cho
- Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Sang-Won Park
- Department of Chemical and Materials Engineering, University of Suwon, 17 Wauan-gil, Bongdam-eup, Hwaseong, Gyeonggi 18323, Republic of Korea
| | - Myung Gwan Hahm
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Moonsang Lee
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
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Li K, Ji Q, Liang H, Hua Z, Hang X, Zeng L, Han H. Biomedical application of 2D nanomaterials in neuroscience. J Nanobiotechnology 2023; 21:181. [PMID: 37280681 DOI: 10.1186/s12951-023-01920-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Accepted: 05/05/2023] [Indexed: 06/08/2023] Open
Abstract
Two-dimensional (2D) nanomaterials, such as graphene, black phosphorus and transition metal dichalcogenides, have attracted increasing attention in biology and biomedicine. Their high mechanical stiffness, excellent electrical conductivity, optical transparency, and biocompatibility have led to rapid advances. Neuroscience is a complex field with many challenges, such as nervous system is difficult to repair and regenerate, as well as the early diagnosis and treatment of neurological diseases are also challenged. This review mainly focuses on the application of 2D nanomaterials in neuroscience. Firstly, we introduced various types of 2D nanomaterials. Secondly, due to the repairment and regeneration of nerve is an important problem in the field of neuroscience, we summarized the studies of 2D nanomaterials applied in neural repairment and regeneration based on their unique physicochemical properties and excellent biocompatibility. We also discussed the potential of 2D nanomaterial-based synaptic devices to mimic connections among neurons in the human brain due to their low-power switching capabilities and high mobility of charge carriers. In addition, we also reviewed the potential clinical application of various 2D nanomaterials in diagnosing and treating neurodegenerative diseases, neurological system disorders, as well as glioma. Finally, we discussed the challenge and future directions of 2D nanomaterials in neuroscience.
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Affiliation(s)
- Kangchen Li
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China
| | - Qianting Ji
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China
| | - Huanwei Liang
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China
| | - Zixuan Hua
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China
| | - Xinyi Hang
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China
| | - Linghui Zeng
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China.
| | - Haijun Han
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China.
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Zhang F, Li C, Li Z, Dong L, Zhao J. Recent progress in three-terminal artificial synapses based on 2D materials: from mechanisms to applications. MICROSYSTEMS & NANOENGINEERING 2023; 9:16. [PMID: 36817330 PMCID: PMC9935897 DOI: 10.1038/s41378-023-00487-2] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/12/2022] [Revised: 12/17/2022] [Accepted: 01/03/2023] [Indexed: 06/18/2023]
Abstract
Synapses are essential for the transmission of neural signals. Synaptic plasticity allows for changes in synaptic strength, enabling the brain to learn from experience. With the rapid development of neuromorphic electronics, tremendous efforts have been devoted to designing and fabricating electronic devices that can mimic synapse operating modes. This growing interest in the field will provide unprecedented opportunities for new hardware architectures for artificial intelligence. In this review, we focus on research of three-terminal artificial synapses based on two-dimensional (2D) materials regulated by electrical, optical and mechanical stimulation. In addition, we systematically summarize artificial synapse applications in various sensory systems, including bioplastic bionics, logical transformation, associative learning, image recognition, and multimodal pattern recognition. Finally, the current challenges and future perspectives involving integration, power consumption and functionality are outlined.
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Affiliation(s)
- Fanqing Zhang
- School of Mechatronical Engineering, Beijing Institute of Technology, 100081 Beijing, China
- Beijing Advanced Innovation Center for Intelligent Robots and Systems, Beijing Institute of Technology, 100081 Beijing, China
| | - Chunyang Li
- School of Mechatronical Engineering, Beijing Institute of Technology, 100081 Beijing, China
- Beijing Advanced Innovation Center for Intelligent Robots and Systems, Beijing Institute of Technology, 100081 Beijing, China
| | - Zhongyi Li
- School of Mechatronical Engineering, Beijing Institute of Technology, 100081 Beijing, China
- Beijing Advanced Innovation Center for Intelligent Robots and Systems, Beijing Institute of Technology, 100081 Beijing, China
| | - Lixin Dong
- Department of Biomedical Engineering, City University of Hong Kong, Kowloon Tong, 999077 Hong Kong, China
| | - Jing Zhao
- School of Mechatronical Engineering, Beijing Institute of Technology, 100081 Beijing, China
- Beijing Advanced Innovation Center for Intelligent Robots and Systems, Beijing Institute of Technology, 100081 Beijing, China
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Zhang Y, Wang Z, Liu J, Wan X, Yu Z, Zhang G, Han C, Li X, Liu W. Improving the linearity of synaptic plasticity of single-walled carbon nanotube field-effect transistors via CdSe quantum dots decoration. NANOTECHNOLOGY 2023; 34:175205. [PMID: 36689764 DOI: 10.1088/1361-6528/acb555] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Accepted: 01/23/2023] [Indexed: 06/17/2023]
Abstract
The linearity of synaptic plasticity of single-walled carbon nanotube field-effect transistor (SWCNT FET) was improved by CdSe quantum dots decoration. The linearity of synaptic plasticity in SWCNT FET with decorating QDs was further improved by reducing the P-type doping level from the atmosphere. The synaptic behavior of SWCNT FET is found to be dominated by the charging and discharging processes of interface traps and surface traps, which are predominantly composed of H2O/O2redox couples. The improved synaptic behavior is mainly due to the reduction of the interface trap charging process after QDs decoration. The inherent correlation between the device synaptic behavior and the electron capture process of the traps are investigated through charging-based trap characterization. This study provides an effective scheme for improving linearity and designing new-type SWCNT synaptic devices.
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Affiliation(s)
- Yantao Zhang
- Department of Microelectronics, School of Electronic and Information Engineering, Xi'an Jiaotong University, People's Republic of China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an Jiaotong University, People's Republic of China
| | - Zhong Wang
- Department of Microelectronics, School of Electronic and Information Engineering, Xi'an Jiaotong University, People's Republic of China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an Jiaotong University, People's Republic of China
| | - Jia Liu
- No. 24 Institute, Electronics Technology Group Corporation, People's Republic of China
| | - Xianjie Wan
- No. 24 Institute, Electronics Technology Group Corporation, People's Republic of China
| | - Zhou Yu
- No. 24 Institute, Electronics Technology Group Corporation, People's Republic of China
| | - Guohe Zhang
- Department of Microelectronics, School of Electronic and Information Engineering, Xi'an Jiaotong University, People's Republic of China
| | - Chuanyu Han
- Department of Microelectronics, School of Electronic and Information Engineering, Xi'an Jiaotong University, People's Republic of China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an Jiaotong University, People's Republic of China
| | - Xin Li
- Department of Microelectronics, School of Electronic and Information Engineering, Xi'an Jiaotong University, People's Republic of China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an Jiaotong University, People's Republic of China
| | - Weihua Liu
- Department of Microelectronics, School of Electronic and Information Engineering, Xi'an Jiaotong University, People's Republic of China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an Jiaotong University, People's Republic of China
- Research Institute of Xi'an Jiaotong University, Zhejiang 311215, People's Republic of China
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Kim JP, Kim SK, Park S, Kuk SH, Kim T, Kim BH, Ahn SH, Cho YH, Jeong Y, Choi SY, Kim S. Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference. NANO LETTERS 2023; 23:451-461. [PMID: 36637103 DOI: 10.1021/acs.nanolett.2c03453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The coming of the big-data era brought a need for power-efficient computing that cannot be realized in the Von Neumann architecture. Neuromorphic computing which is motivated by the human brain can greatly reduce power consumption through matrix multiplication, and a device that mimics a human synapse plays an important role. However, many synaptic devices suffer from limited linearity and symmetry without using incremental step pulse programming (ISPP). In this work, we demonstrated a charge-trap flash (CTF)-based synaptic transistor using trap-level engineered Al2O3/Ta2O5/Al2O3 gate stack for successful neuromorphic computing. This novel gate stack provided precise control of the conductance with more than 6 bits. We chose the appropriate bias for highly linear and symmetric modulation of conductance and realized it with very short (25 ns) identical pulses at low voltage, resulting in low power consumption and high reliability. Finally, we achieved high learning accuracy in the training of 60000 MNIST images.
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Affiliation(s)
- Joon Pyo Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - Seong Kwang Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - Seohak Park
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - Song-Hyeon Kuk
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - Taeyoon Kim
- Korea Institute of Science and Technology (KIST), Seoul02792, Republic of Korea
| | - Bong Ho Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - Seong-Hun Ahn
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - Yong-Hoon Cho
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - YeonJoo Jeong
- Korea Institute of Science and Technology (KIST), Seoul02792, Republic of Korea
| | - Sung-Yool Choi
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
| | - Sanghyeon Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea
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9
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Yan X, Qian JH, Sangwan VK, Hersam MC. Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108025. [PMID: 34813677 DOI: 10.1002/adma.202108025] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2021] [Revised: 11/07/2021] [Indexed: 06/13/2023]
Abstract
Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy-efficient information processing of the brain. While non-volatile memory (NVM) based on resistive switches, phase-change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi-terminal device concepts are required for more sophisticated bio-realistic functions. Of particular interest are memtransistors based on low-dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi-terminal NVM devices including dual-gated floating-gate memories, dual-gated ferroelectric transistors, and dual-gated van der Waals heterojunctions. The different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase-changes properties of nanomaterials. Finally, strategies for achieving wafer-scale integration of memtransistors and multi-terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.
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Affiliation(s)
- Xiaodong Yan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Justin H Qian
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
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10
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Programmable ferroelectric bionic vision hardware with selective attention for high-precision image classification. Nat Commun 2022; 13:7019. [PMID: 36384983 PMCID: PMC9669032 DOI: 10.1038/s41467-022-34565-2] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/24/2022] [Accepted: 10/28/2022] [Indexed: 11/18/2022] Open
Abstract
Selective attention is an efficient processing strategy to allocate computational resources for pivotal optical information. However, the hardware implementation of selective visual attention in conventional intelligent system is usually bulky and complex along with high computational cost. Here, programmable ferroelectric bionic vision hardware to emulate the selective attention is proposed. The tunneling effect of photogenerated carriers are controlled by dynamic variation of energy barrier, enabling the modulation of memory strength from 9.1% to 47.1% without peripheral storage unit. The molecular polarization of ferroelectric P(VDF-TrFE) layer enables a single device not only multiple nonvolatile states but also the implementation of selective attention. With these ferroelectric devices are arrayed together, UV light information can be selectively recorded and suppressed the with high current decibel level. Furthermore, the device with positive polarization exhibits high wavelength dependence in the image attention processing, and the fabricated ferroelectric sensory network exhibits high accuracy of 95.7% in the pattern classification for multi-wavelength images. This study can enrich the neuromorphic functions of bioinspired sensing devices and pave the way for profound implications of future bioinspired optoelectronics.
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Huang CH, Zhang Y, Nomura K. Reconfigurable Artificial Synapses with Excitatory and Inhibitory Response Enabled by an Ambipolar Oxide Thin-Film Transistor. ACS APPLIED MATERIALS & INTERFACES 2022; 14:22252-22262. [PMID: 35522905 DOI: 10.1021/acsami.1c24327] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A gate-tunable synaptic device controlling dynamically reconfigurable excitatory and inhibitory synaptic responses, which can emulate the fundamental synaptic responses for developing diverse functionalities of the biological nervous system, was developed using ambipolar oxide semiconductor thin-film transistors (TFTs). Since the balanced ambipolarity is significant, a boron-incorporated SnO (SnO:B) oxide semiconductor channel was newly developed to improve the ambipolar charge transports by reducing the subgap defect density, which was reduced to less than 1017 cm-3. The ambipolar SnO:B-TFT could be fabricated with a good reproductivity at the maximum process temperature of 250 °C and exhibited good TFT performances, such as a nearly zero switching voltage, the saturation mobility of ∼1.3 cm2 V-1 s-1, s-value of ∼1.1 V decade-1, and an on/off-current ratio of ∼8 × 103 for the p-channel mode, while ∼0.14 cm2 V-1 s-1, ∼2.2 V decade-1and ∼1 × 103 for n-channel modes, respectively. The ambipolar device imitated potentiation/depression behaviors in both excitatory and inhibitory synaptic responses by using the p- and n-channel transports by tuning a gate bias. The low-power consumptions of <20 and <2 nJ per pulse for the excitatory and inhibitory operations, respectively, were also achieved. The presented device operated under an ambient atmosphere and confirmed a good operation reliability over 5000 pulses and a long-term air environmental stability. The study presents the high potential of an ambipolar oxide-TFT-based synaptic device with a good manufacturability to develop emerging neuromorphic perception and computing hardware for next-generation artificial intelligence systems.
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Affiliation(s)
- Chi-Hsin Huang
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, United States
| | - Yong Zhang
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, United States
| | - Kenji Nomura
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, United States
- Material Science and Engineering Program, University of California San Diego, La Jolla, California 92093, United States
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12
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Nonvolatile Memories in Spiking Neural Network Architectures: Current and Emerging Trends. ELECTRONICS 2022. [DOI: 10.3390/electronics11101610] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
A sustainable computing scenario demands more energy-efficient processors. Neuromorphic systems mimic biological functions by employing spiking neural networks for achieving brain-like efficiency, speed, adaptability, and intelligence. Current trends in neuromorphic technologies address the challenges of investigating novel materials, systems, and architectures for enabling high-integration and extreme low-power brain-inspired computing. This review collects the most recent trends in exploiting the physical properties of nonvolatile memory technologies for implementing efficient in-memory and in-device computing with spike-based neuromorphic architectures.
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13
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Raeis-Hosseini N, Chen S, Papavassiliou C, Valov I. Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities. RSC Adv 2022; 12:14235-14245. [PMID: 35558855 PMCID: PMC9092617 DOI: 10.1039/d2ra02456j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2022] [Accepted: 05/05/2022] [Indexed: 11/21/2022] Open
Abstract
Electrochemical metallization memory (ECM) devices have been made by sub-stoichiometric deposition of a tantalum oxide switching film (Ta2O5-x ) using sputtering. We investigated the influence of zirconium as the active top electrode material in the lithographically fabricated ECM devices. A simple capacitor like (Pt/Zr/Ta2O5-x /Pt) structure represented the resistive switching memory. A cyclic voltammetry measurement demonstrated the electrochemical process of the memory device. The I-V characteristics of ECMs show stable bipolar resistive switching properties with reliable endurance and retention. The resistive switching mechanism results from the formation and rupture of a conductive filament characteristic of ECM. Our results suggest that Zr can be considered a potential active electrode in the ECMs for the next generation of nonvolatile nanoelectronics. We successfully showed that the ECM device can work under AC pulses to emulate the essential characteristics of an artificial synapse by further improvements.
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Affiliation(s)
- Niloufar Raeis-Hosseini
- Department of Electronics and Electrical Engineering, Imperial College London London SW7 2BT UK
| | - Shaochuan Chen
- Peter Gruenberg Institute, Research Centre Juelich Juelich 52425 Germany
| | - Christos Papavassiliou
- Department of Electronics and Electrical Engineering, Imperial College London London SW7 2BT UK
| | - Ilia Valov
- Peter Gruenberg Institute, Research Centre Juelich Juelich 52425 Germany.,Institute for Materials in Electrical Engineering II, RWTH Aachen University Sommerfeldstrasse 24 Aachen 52074 Germany
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14
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Shen CK, Chaurasiya R, Chen KT, Chen JS. Synaptic Emulation via Ferroelectric P(VDF-TrFE) Reinforced Charge Trapping/Detrapping in Zinc-Tin Oxide Transistor. ACS APPLIED MATERIALS & INTERFACES 2022; 14:16939-16948. [PMID: 35357811 DOI: 10.1021/acsami.2c03066] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Brain inspired artificial synapses are highly desirable for neuromorphic computing and are an alternative to a conventional computing system. Here, we report a simple and cost-effective ferroelectric capacitively coupled zinc-tin oxide (ZTO) thin-film transistor (TFT) topped with ferroelectric copolymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) for artificial synaptic devices. Ferroelectric dipoles enhance the charge trapping/detrapping effect in ZTO TFT, as confirmed by the transfer curve (ID-VG) analysis. This substantiates superior artificial synapse responses in ferroelectric-coupled ZTO TFT because the current potentiation and depression are individually improved. The ferroelectric-coupled ZTO TFT successfully emulates the essential features of the artificial synapse, including pair-pulsed facilitation (PPF) and potentiation/depression (P/D) characteristics. In addition, the device also mimics the memory consolidation behavior through intensified stimulation. This work demonstrates that the ferroelectric-coupled ZTO synaptic transistor possesses great potential as a hardware candidate for neuromorphic computing.
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Affiliation(s)
- Ching-Kang Shen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Rajneesh Chaurasiya
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Kuan-Ting Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Jen-Sue Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
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15
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Song MK, Song YW, Sung T, Namgung SD, Yoon JH, Lee YS, Nam KT, Kwon JY. Synaptic transistors based on a tyrosine-rich peptide for neuromorphic computing. RSC Adv 2021; 11:39619-39624. [PMID: 35494131 PMCID: PMC9044548 DOI: 10.1039/d1ra06492d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2021] [Accepted: 11/29/2021] [Indexed: 12/12/2022] Open
Abstract
In this article, we propose an artificial synaptic device based on a proton-conducting peptide material. By using the redox-active property of tyrosine, the Tyr-Tyr-Ala-Cys-Ala-Tyr-Tyr peptide film was utilized as a gate insulator that shows synaptic plasticity owing to the formation of proton electric double layers. The ion gating effects on the transfer characteristics and temporal current responses are shown. Further, timing-dependent responses, including paired-pulse facilitation, synaptic potentiation, and transition from short-term plasticity to long-term plasticity, have been demonstrated for the electrical emulation of biological synapses in the human brain. Herein, we provide a novel material platform that is bio-inspired and biocompatible for use in brain-mimetic electronic devices.
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Affiliation(s)
- Min-Kyu Song
- School of Integrated Technology, Yonsei University Incheon 21983 Republic of Korea
| | - Young-Woong Song
- School of Integrated Technology, Yonsei University Incheon 21983 Republic of Korea
| | - Taehoon Sung
- School of Integrated Technology, Yonsei University Incheon 21983 Republic of Korea
| | - Seok Daniel Namgung
- Department of Materials Science and Engineering, Seoul National University Seoul 08826 Republic of Korea
- Soft Foundry, Seoul National University Seoul 08826 Republic of Korea
| | - Jeong Hyun Yoon
- School of Integrated Technology, Yonsei University Incheon 21983 Republic of Korea
| | - Yoon-Sik Lee
- School of Chemical and Biological Engineering, Seoul National University Seoul 08826 Republic of Korea
| | - Ki Tae Nam
- Department of Materials Science and Engineering, Seoul National University Seoul 08826 Republic of Korea
- Soft Foundry, Seoul National University Seoul 08826 Republic of Korea
| | - Jang-Yeon Kwon
- School of Integrated Technology, Yonsei University Incheon 21983 Republic of Korea
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16
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Huang CH, Chang H, Yang TY, Wang YC, Chueh YL, Nomura K. Artificial Synapse Based on a 2D-SnO 2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:52822-52832. [PMID: 34714053 DOI: 10.1021/acsami.1c18329] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A new type of two-dimensional (2D) SnO2 semiconductor-based gate-tunable memristor, that is, a memtransistor, an integrated device of a memristor and a transistor, was demonstrated to advance next-generation neuromorphic computing technology. The polycrystalline 2D-SnO2 memristors derived from a low-temperature and vacuum-free liquid metal process offer several interesting resistive switching properties such as excellent digital/analog resistive switching, multistate storage, and gate-tunability function of resistance switching states. Significantly, the gate tunability function that is not achievable in conventional two-terminal memristors provides the capability to implement heterosynaptic analog switching by regulating gate bias for enabling complex neuromorphic learning. We successfully demonstrated that the gate-tunable synaptic device dynamically modulated the analog switching behavior with good linearity and an improved conductance change ratio for high recognition accuracy learning. The presented gate-tunable 2D-oxide memtransistor will advance neuromorphic device technology and open up new opportunities to design learning schemes with an extra degree of freedom.
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Affiliation(s)
- Chi-Hsin Huang
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Dr., La Jolla, California 92093, United States
| | - Hsuan Chang
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Dr., La Jolla, California 92093, United States
| | - Tzu-Yi Yang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yi-Chung Wang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kenji Nomura
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Dr., La Jolla, California 92093, United States
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17
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Wang L, Wang Y, Wen D. Tunable biological nonvolatile multilevel data storage devices. Phys Chem Chem Phys 2021; 23:24834-24841. [PMID: 34719695 DOI: 10.1039/d1cp04622e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The speed with which electronic products are updated is continuously increasing. Consequently, since waste electronic products can cause serious environmental pollution, the demand for electronic products made of biological materials is becoming increasingly urgent. Although biological memristors have significant advantages, their electrical characteristics still do not meet the requirements to be used in future nonvolatile memories. Therefore, how to control their electrical characteristics has become a popular topic of research. In this study, tunable biomemristors with an Al/tussah blood (TB)-carbon nanotube (CNT)/indium tin oxide (ITO)/glass structure were fabricated. Such a device exhibits stable bipolar resistance switching behavior and good retention characteristics (104 s). Experimental results show that the ON/OFF current ratio can be effectively controlled by modifying the CNT concentration in the TB-CNT composite film. Multilevel (8 levels, 3 bits per cell) storage capabilities can be achieved in the device by controlling its compliance current in order to achieve high-density storage. The resistance switching behavior originates from the formation and rupture of conductive oxygen vacancy filaments. TB is a promising natural biomaterial in the field of green electronics, and this research could blaze a new trail for the development of biological memory devices. Biomemristors with multilevel resistance states can be used as electronic synapses and are one of the choices for simulating biological synapses.
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Affiliation(s)
- Lu Wang
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China. .,HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
| | - Yuting Wang
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China. .,HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
| | - Dianzhong Wen
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China. .,HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
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18
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Kim Y, Park CH, An JS, Choi SH, Kim TW. Biocompatible artificial synapses based on a zein active layer obtained from maize for neuromorphic computing. Sci Rep 2021; 11:20633. [PMID: 34667193 PMCID: PMC8526676 DOI: 10.1038/s41598-021-00076-1] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/21/2021] [Accepted: 09/29/2021] [Indexed: 11/21/2022] Open
Abstract
Artificial synaptic devices based on natural organic materials are becoming the most desirable for extending their fields of applications to include wearable and implantable devices due to their biocompatibility, flexibility, lightweight, and scalability. Herein, we proposed a zein material, extracted from natural maize, as an active layer in an artificial synapse. The synaptic device exhibited notable digital-data storage and analog data processing capabilities. Remarkably, the zein-based synaptic device achieved recognition accuracy of up to 87% and exhibited clear digit-classification results on the learning and inference test. Moreover, the recognition accuracy of the zein-based artificial synapse was maintained within a difference of less than 2%, regardless of mechanically stressed conditions. We believe that this work will be an important asset toward the realization of wearable and implantable devices utilizing artificial synapses.
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Affiliation(s)
- Youngjin Kim
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Chul Hyeon Park
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Jun Seop An
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Seung-Hye Choi
- Center for Neuroscience, Brain Science Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Tae Whan Kim
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
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19
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Wan H, Zhao J, Lo LW, Cao Y, Sepúlveda N, Wang C. Multimodal Artificial Neurological Sensory-Memory System Based on Flexible Carbon Nanotube Synaptic Transistor. ACS NANO 2021; 15:14587-14597. [PMID: 34472329 DOI: 10.1021/acsnano.1c04298] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
As the initial stage in the formation of human intelligence, the sensory-memory system plays a critical role for human being to perceive, interact, and evolve with the environment. Electronic implementation of such biological sensory-memory system empowers the development of environment-interactive artificial intelligence (AI) that can learn and evolve with diversified external information, which could potentially broaden the application of the AI technology in the field of human-computer interaction. Here, we report a multimodal artificial sensory-memory system consisting of sensors for generating biomimetic visual, auditory, tactile inputs, and flexible carbon nanotube synaptic transistor that possesses synapse-like signal processing and memorizing behaviors. The transduction of physical signals into information-containing, presynaptic action potentials and the synaptic plasticity of the transistor in response to single and long-term action potential excitations have been systematically characterized. The bioreceptor-like sensing and synapse-like memorizing behaviors have also been demonstrated. On the basis of the memory and learning characteristics of the sensory-memory system, the well-known psychological model describing human memory, the "multistore memory" model, and the classical conditioning experiment that demonstrates the associative learning of brain, "Pavlov's dog's experiment", have both been implemented electronically using actual physical input signals as the sources of the stimuli. The biomimetic intelligence demonstrated in this neurological sensory-memory system shows its potential in promoting the advancement in multimodal, user-environment interactive AI.
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Affiliation(s)
| | | | | | - Yunqi Cao
- State Key Laboratory of Industrial Control Technology, College of Control Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Nelson Sepúlveda
- Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824, United States
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20
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Core-Shell Dual-Gate Nanowire Charge-Trap Memory for Synaptic Operations for Neuromorphic Applications. NANOMATERIALS 2021; 11:nano11071773. [PMID: 34361159 PMCID: PMC8308180 DOI: 10.3390/nano11071773] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2021] [Revised: 06/26/2021] [Accepted: 07/06/2021] [Indexed: 11/19/2022]
Abstract
This work showcases the physical insights of a core-shell dual-gate (CSDG) nanowire transistor as an artificial synaptic device with short/long-term potentiation and long-term depression (LTD) operation. Short-term potentiation (STP) is a temporary potentiation of a neural network, and it can be transformed into long-term potentiation (LTP) through repetitive stimulus. In this work, floating body effects and charge trapping are utilized to show the transition from STP to LTP while de-trapping the holes from the nitride layer shows the LTD operation. Furthermore, linearity and symmetry in conductance are achieved through optimal device design and biases. In a system-level simulation, with CSDG nanowire transistor a recognition accuracy of up to 92.28% is obtained in the Modified National Institute of Standards and Technology (MNIST) pattern recognition task. Complementary metal-oxide-semiconductor (CMOS) compatibility and high recognition accuracy makes the CSDG nanowire transistor a promising candidate for the implementation of neuromorphic hardware.
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21
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Gong Y, Xing X, Wang Y, Lv Z, Zhou Y, Han ST. Emerging MXenes for Functional Memories. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100006] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022] Open
Affiliation(s)
- Yue Gong
- Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China
| | - Xuechao Xing
- Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China
| | - Yan Wang
- Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China
| | - Ziyu Lv
- Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China
| | - Ye Zhou
- Institute for Advanced Study Shenzhen University Shenzhen 518060 P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China
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22
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Du C, Ren Y, Qu Z, Gao L, Zhai Y, Han ST, Zhou Y. Synaptic transistors and neuromorphic systems based on carbon nano-materials. NANOSCALE 2021; 13:7498-7522. [PMID: 33928966 DOI: 10.1039/d1nr00148e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Carbon-based materials possessing a nanometer size and unique electrical properties perfectly address the two critical issues of transistors, the low power consumption and scalability, and are considered as a promising material in next-generation synaptic devices. In this review, carbon-based synaptic transistors were systematically summarized. In the carbon nanotube section, the synthesis of carbon nanotubes, purification of carbon nanotubes, the effect of architecture on the device performance and related carbon nanotube-based devices for neuromorphic computing were discussed. In the graphene section, the synthesis of graphene and its derivative, as well as graphene-based devices for neuromorphic computing, was systematically studied. Finally, the current challenges for carbon-based synaptic transistors were discussed.
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Affiliation(s)
- Chunyu Du
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yanyun Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Zhiyang Qu
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Lili Gao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
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23
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Xiao W, Shan L, Zhang H, Fu Y, Zhao Y, Yang D, Jiao C, Sun G, Wang Q, He D. High photosensitivity light-controlled planar ZnO artificial synapse for neuromorphic computing. NANOSCALE 2021; 13:2502-2510. [PMID: 33471021 DOI: 10.1039/d0nr08082a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A light-controlled artificial synapse, which mimics the human brain has been considered to be one of the ideal candidates for the fundamental physical architecture of a neuromorphic computing system owing to the possible abilities of high bandwidth and low power calculation. However, the low photosensitivity of synapse devices can affect the accuracy of recognition and classification in neuromorphic computing tasks. In this work, a planar light-controlled artificial synapse having high photosensitivity (Ion/Ioff > 1000) with a high photocurrent and a low dark current is realized based on a ZnO thin film grown by radiofrequency sputtering. The synaptic functions of the human brain such as sensory memory, short-term memory, long-term memory, duration-time-dependent-plasticity, light-intensity-dependent-plasticity, learning-experience behavior, neural facilitation, and spike-timing-dependent plasticity are successfully emulated using persistent photoconductivity characteristic of a ZnO thin film. Furthermore, the high classification accuracy of 90%, 92%, and 86% after 40 epochs for file type datasets, small digits, and large digit is realized with a three-layer neural network based on backpropagation where the numerical weights in the network layer are mapped directly to the conductance states of the experimental synapse devices. Finally, characterization and analysis reveal that oxygen vacancy defects and chemisorbed oxygen on the surface of the ZnO film are the main factors that determine the performance of the device.
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Affiliation(s)
- Wei Xiao
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Linbo Shan
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Haitao Zhang
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Yujun Fu
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Yanfei Zhao
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Dongliang Yang
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Chaohui Jiao
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Guangzhi Sun
- Wuhan Secondary Ship Design and Research Institute, Wuhan 430064, China
| | - Qi Wang
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
| | - Deyan He
- Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China.
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24
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Lu K, Li X, Sun Q, Pang X, Chen J, Minari T, Liu X, Song Y. Solution-processed electronics for artificial synapses. MATERIALS HORIZONS 2021; 8:447-470. [PMID: 34821264 DOI: 10.1039/d0mh01520b] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Artificial synaptic devices and systems have become hot topics due to parallel computing, high plasticity, integration of storage, and processing to meet the challenges of the traditional Von Neumann computers. Currently, two-terminal memristors and three-terminal transistors have been mainly developed for high-density storage with high switching speed and high reliability because of the adjustable resistivity, controllable ion migration, and abundant choices of functional materials and fabrication processes. To achieve the low-cost, large-scale, and easy-process fabrication, solution-processed techniques have been extensively employed to develop synaptic electronics towards flexible and highly integrated three-dimensional (3D) neural networks. Herein, we have summarized and discussed solution-processed techniques in the fabrication of two-terminal memristors and three-terminal transistors for the application of artificial synaptic electronics mainly reported in the recent five years from the view of fabrication processes, functional materials, electronic operating mechanisms, and system applications. Furthermore, the challenges and prospects were discussed in depth to promote solution-processed techniques in the future development of artificial synapse with high performance and high integration.
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Affiliation(s)
- Kuakua Lu
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, P. R. China.
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25
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Abstract
Neuromorphic devices and systems have attracted attention as next-generation computing due to their high efficiency in processing complex data. So far, they have been demonstrated using both machine-learning software and complementary metal-oxide-semiconductor-based hardware. However, these approaches have drawbacks in power consumption and learning speed. An energy-efficient neuromorphic computing system requires hardware that can mimic the functions of a brain. Therefore, various materials have been introduced for the development of neuromorphic devices. Here, recent advances in neuromorphic devices are reviewed. First, the functions of biological synapses and neurons are discussed. Also, deep neural networks and spiking neural networks are described. Then, the operation mechanism and the neuromorphic functions of emerging devices are reviewed. Finally, the challenges and prospects for developing neuromorphic devices that use emerging materials are discussed.
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Affiliation(s)
- Min-Kyu Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Youngjun Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Ik-Jyae Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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Wan H, Cao Y, Lo LW, Zhao J, Sepúlveda N, Wang C. Flexible Carbon Nanotube Synaptic Transistor for Neurological Electronic Skin Applications. ACS NANO 2020; 14:10402-10412. [PMID: 32678612 DOI: 10.1021/acsnano.0c04259] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
There is an increasing interest in the development of memristive or artificial synaptic devices that emulate the neuronal activities for neuromorphic computing applications. While there have already been many reports on artificial synaptic transistors implemented on rigid substrates, the use of flexible devices could potentially enable an even broader range of applications. In this paper, we report artificial synaptic thin-film transistors built on an ultrathin flexible substrate using high carrier mobility semiconducting single-wall carbon nanotubes. The synaptic characteristics of the flexible synaptic transistor including long-term/short-term plasticity, spike-amplitude-dependent plasticity, spike-width-dependent plasticity, paired-pulse facilitation, and spike-time-dependent plasticity have all been systematically characterized. Furthermore, we have demonstrated a flexible neurological electronic skin and its peripheral nerve with a flexible ferroelectret nanogenerator (FENG) serving as the sensory mechanoreceptor that generates action potentials to be processed and transmitted by the artificial synapse. In such neurological electronic skin, the flexible FENG sensor converts the tactile input (magnitude and frequency of force) into presynaptic action potential pulses, which are then passed to the gate of the synaptic transistor to induce change in its postsynaptic current, mimicking the modulation of synaptic weight in a biological synapse. Our neurological electronic skin closely imitates the behavior of actual human skin, and it allows for instantaneous detection of force stimuli and offers biological synapse-like behavior to relay the stimulus signals to the next stage. The flexible sensory skin could potentially be used to interface with skeletal muscle fibers for applications in neuroprosthetic devices.
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Affiliation(s)
| | - Yunqi Cao
- Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824, United States
| | | | | | - Nelson Sepúlveda
- Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824, United States
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Sangwan VK, Hersam MC. Neuromorphic nanoelectronic materials. NATURE NANOTECHNOLOGY 2020; 15:517-528. [PMID: 32123381 DOI: 10.1038/s41565-020-0647-z] [Citation(s) in RCA: 199] [Impact Index Per Article: 49.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2019] [Accepted: 01/23/2020] [Indexed: 05/10/2023]
Abstract
Memristive and nanoionic devices have recently emerged as leading candidates for neuromorphic computing architectures. While top-down fabrication based on conventional bulk materials has enabled many early neuromorphic devices and circuits, bottom-up approaches based on low-dimensional nanomaterials have shown novel device functionality that often better mimics a biological neuron. In addition, the chemical, structural and compositional tunability of low-dimensional nanomaterials coupled with the permutational flexibility enabled by van der Waals heterostructures offers significant opportunities for artificial neural networks. In this Review, we present a critical survey of emerging neuromorphic devices and architectures enabled by quantum dots, metal nanoparticles, polymers, nanotubes, nanowires, two-dimensional layered materials and van der Waals heterojunctions with a particular emphasis on bio-inspired device responses that are uniquely enabled by low-dimensional topology, quantum confinement and interfaces. We also provide a forward-looking perspective on the opportunities and challenges of neuromorphic nanoelectronic materials in comparison with more mature technologies based on traditional bulk electronic materials.
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Affiliation(s)
- Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA.
- Department of Chemistry, Northwestern University, Evanston, IL, USA.
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA.
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Yu R, Li E, Wu X, Yan Y, He W, He L, Chen J, Chen H, Guo T. Electret-Based Organic Synaptic Transistor for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2020; 12:15446-15455. [PMID: 32153175 DOI: 10.1021/acsami.9b22925] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Neuromorphic computing inspired by the neural systems in human brain will overcome the issue of independent information processing and storage. An artificial synaptic device as a basic unit of a neuromorphic computing system can perform signal processing with low power consumption, and exploring different types of synaptic transistors is essential to provide suitable artificial synaptic devices for artificial intelligence. Hence, for the first time, an electret-based synaptic transistor (EST) is presented, which successfully shows synaptic behaviors including excitatory/inhibitory postsynaptic current, paired-pulse facilitation/depression, long-term memory, and high-pass filtering. Moreover, a neuromorphic computing simulation based on our EST is performed using the handwritten artificial neural network, which exhibits an excellent recognition accuracy (85.88%) after 120 learning epochs, higher than most reported organic synaptic transistors and close to the ideal accuracy (92.11%). Such a novel synaptic device enriches the diversity of synaptic transistors, laying the foundation for the diversified development of the next generation of neuromorphic computing systems.
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Affiliation(s)
- Rengjian Yu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Enlong Li
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Xiaomin Wu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Yujie Yan
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Weixin He
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Lihua He
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Jinwei Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
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29
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Dai M, Wu Z, Qi S, Huo C, Zhang Q, Zhang X, Webster TJ, Zhang H. Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications. Int J Nanomedicine 2020; 15:1863-1870. [PMID: 32231432 PMCID: PMC7085341 DOI: 10.2147/ijn.s207852] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2019] [Accepted: 08/28/2019] [Indexed: 12/05/2022] Open
Abstract
BACKGROUND Electronic devices which mimic the functionality of biological synapses are a large step to replicate the human brain for neuromorphic computing and for numerous medical research investigations. One of the representative synaptic behaviors is paired-pulse facilitation (PPF). It has been widely investigated because it is regarded to be related to biological memory. However, plasticity behavior is only part of the human brain memory behavior. METHODS Here, we present a phenomenon which is opposite to PPF, i.e., paired-pulse inhibition (PPI), in nano oxide devices for the first time. The research here suggests that rather than being enhanced, the phenomena of memory loss would also be possessed by such electronic devices. The device physics mechanism behind memory loss behavior was investigated. This mechanism is sustained by historical memory and degradation manufactured by device trauma to regulate characteristically stimulated origins of artificial transmission behaviors. RESULTS Under the trauma of a memory device, both the signal amplitude and signal time stimulated by a pulse are lower than the first signal stimulated by a previous pulse in the PPF, representing a new scenario in the struggle for memory. In this way, more typical human brain behaviors could be simulated, including the effect of age on latency and error generation, cerebellar infarct, trauma and memory loss pharmacological actions (such as those caused by hyoscines and nitrazepam). CONCLUSION Thus, this study developed a new approach for implementing the manner in which the brain works in semiconductor devices for improving medical research.
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Affiliation(s)
- Mingzhi Dai
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, People’s Republic of China
| | - Zhendong Wu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, People’s Republic of China
| | - Shaocheng Qi
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, People’s Republic of China
| | - Changhe Huo
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, People’s Republic of China
| | - Qiang Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, People’s Republic of China
| | - Xingye Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, People’s Republic of China
| | - Thomas J Webster
- Department of Chemical Engineering, Northeastern University, Boston, MA02115, USA
| | - Hengbo Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo315201, People’s Republic of China
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He C, Tang J, Shang DS, Tang J, Xi Y, Wang S, Li N, Zhang Q, Lu JK, Wei Z, Wang Q, Shen C, Li J, Shen S, Shen J, Yang R, Shi D, Wu H, Wang S, Zhang G. Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2020; 12:11945-11954. [PMID: 32052957 DOI: 10.1021/acsami.9b21747] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) materials and van der Waals heterostructures have attracted tremendous attention because of their appealing electronic, mechanical, and optoelectronic properties, which offer the possibility to extend the range of functionalities for diverse potential applications. Here, we fabricate a novel multiterminal device with dual-gate based on 2D material van der Waals heterostructures. Such a multiterminal device exhibited excellent nonvolatile multilevel resistance switching performance controlled by the source-drain voltage and back-gate voltage. Based on these features, heterosynaptic plasticity, in which the synaptic weight can be tuned by another modulatory interneuron, has been mimicked. A tunable analogue weight update (both on/off ratio and update nonlinearity) of synapse with high speed (50 ns) and low energy (∼7.3 fJ) programming has been achieved. These results demonstrate the great potential of the artificial synapse based on van der Waals heterostructures for neuromorphic computing.
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Affiliation(s)
- Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
| | - Jian Tang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Da-Shan Shang
- The Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Jianshi Tang
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yue Xi
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing 100084, China
| | - Shuopei Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan-Lake Materials Laboratory, Dongguan 523808, Guangdong Province, China
| | - Na Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Qingtian Zhang
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing 100084, China
| | - Ji-Kai Lu
- The Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Zheng Wei
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Cheng Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jiawei Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Shipeng Shen
- Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
| | - Jianxin Shen
- Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
| | - Rong Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing 100190, China
- Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China
- Songshan-Lake Materials Laboratory, Dongguan 523808, Guangdong Province, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing 100190, China
- Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China
- Songshan-Lake Materials Laboratory, Dongguan 523808, Guangdong Province, China
| | - Huaqiang Wu
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Shouguo Wang
- Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Science, University of Chinese Academy of Sciences, Beijing 100190, China
- Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China
- Songshan-Lake Materials Laboratory, Dongguan 523808, Guangdong Province, China
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Qian C, Oh S, Choi Y, Seo S, Sun J, Park JH, Cho JH. Rational Band Engineering of an Organic Double Heterojunction for Artificial Synaptic Devices with Enhanced State Retention and Linear Update of Synaptic Weight. ACS APPLIED MATERIALS & INTERFACES 2020; 12:10737-10745. [PMID: 32026673 DOI: 10.1021/acsami.9b22319] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Herein, we propose an organic double heterojunction to enable a nonvolatile step modulation of the conductance of an artificial synapse; the double heterojunction is composed of N,N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8), copper phthalocyanine (CuPc), and para-sexiphenyl (p-6P). The carrier confinement in the CuPc region present in the double-heterojunction structure enabled the nonvolatile modulation of the postsynaptic current. The proposed organic synapse exhibited an excellent conductance change, characteristic with a nonlinearity (NL) value below 0.01 in the long-term potentiation (LTP) region. Furthermore, the NL value for long-term depression (LTD) could be reduced effectively from 45 to 3.5 by a pulse modulation technique. A simple artificial neural network (ANN) was theoretically designed using the LTP/LTD characteristic curves of such organic synapses, and then, learning and recognition tasks were performed using Modified National Institute of Standards and Technology digit images. A four-amplitude weight update method enabled considerable enhancement of the recognition rate from 53 to 70%. Although the designed ANN was based on a single-layer perceptron model, a high maximum accuracy of 75% was achieved. These newly studied techniques for synaptic devices are expected to open up new possibilities for the realization of artificial synapses based on organic double heterojunctions.
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Affiliation(s)
- Chuan Qian
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 120-749, Republic of Korea
| | - Seyong Oh
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yongsuk Choi
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 120-749, Republic of Korea
| | - Seunghwan Seo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 120-749, Republic of Korea
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Choi Y, Kim JH, Qian C, Kang J, Hersam MC, Park JH, Cho JH. Gate-Tunable Synaptic Dynamics of Ferroelectric-Coupled Carbon-Nanotube Transistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:4707-4714. [PMID: 31878774 DOI: 10.1021/acsami.9b17742] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Artificial neural networks (ANNs) based on synaptic devices, which can simultaneously perform processing and storage of data, have superior computing performance compared to conventional von Neumann architectures. Here, we present a ferroelectric coupled artificial synaptic device with reliable weight update and storage properties for ANNs. The artificial synaptic device, which is based on a ferroelectric polymer capacitively coupled with an oxide dielectric via an electric-field-permeable, semiconducting single-walled carbon-nanotube channel, is successfully fabricated by inkjet printing. By controlling the ferroelectric polarization, synaptic dynamics, such as excitatory and inhibitory postsynaptic currents and long-term potentiation/depression characteristics, is successfully implemented in the artificial synaptic device. Furthermore, the constructed ANN, which is designed in consideration of the device-to-device variation within the synaptic array, efficiently executes the tasks of learning and recognition of the Modified National Institute of Standards and Technology numerical patterns.
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Affiliation(s)
- Yongsuk Choi
- Department of Chemical and Biomolecular Engineering , Yonsei University , Seoul 120-749 , Republic of Korea
| | | | - Chuan Qian
- Department of Chemical and Biomolecular Engineering , Yonsei University , Seoul 120-749 , Republic of Korea
| | | | - Mark C Hersam
- Department of Materials Science and Engineering, Department of Chemistry, and Department of Electrical and Computer Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | | | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering , Yonsei University , Seoul 120-749 , Republic of Korea
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33
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Kim S, Lee Y, Kim HD, Choi SJ. Parallel weight update protocol for a carbon nanotube synaptic transistor array for accelerating neuromorphic computing. NANOSCALE 2020; 12:2040-2046. [PMID: 31912838 DOI: 10.1039/c9nr08979a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Brain-inspired neuromorphic computing has the potential to overcome the inherent inefficiency of the conventional von Neumann architecture by using the massively parallel processing power of artificial neural networks. Neuromorphic parallel processing can be implemented naturally using the crossbar geometry of synaptic device arrays with Ohm's and Kirchhoff's laws. However, selective and parallel weight updates of the synaptic crossbar array are still very challenging due to the unavoidable crosstalk between adjacent devices and sneak path currents. Here, we experimentally demonstrate a weight update protocol in a carbon nanotube synaptic transistor array, where selective and parallel weight updates can be executed by exploiting the individually controllable three terminals of the synaptic device via a localized carrier trapping mechanism. The trained 9 × 8 synaptic array solves four different convolution operations simultaneously for the feature extraction of an image. The massive parallelism and robustness of the weight update protocol are important features toward effective manipulation of big data through neuromorphic computing systems.
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Affiliation(s)
- Sungho Kim
- Department of Electrical Engineering, Sejong University, Seoul 05006, Korea
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34
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Artificial 2D van der Waals Synapse Devices via Interfacial Engineering for Neuromorphic Systems. NANOMATERIALS 2020; 10:nano10010088. [PMID: 31906481 PMCID: PMC7022853 DOI: 10.3390/nano10010088] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2019] [Revised: 12/28/2019] [Accepted: 12/31/2019] [Indexed: 01/21/2023]
Abstract
Despite extensive investigations of a wide variety of artificial synapse devices aimed at realizing a neuromorphic hardware system, the identification of a physical parameter that modulates synaptic plasticity is still required. In this context, a novel two-dimensional architecture consisting of a NbSe2/WSe2/Nb2O5 heterostructure placed on an SiO2/p+ Si substrate was designed to overcome the limitations of the conventional silicon-based complementary metal-oxide semiconductor technology. NbSe2, WSe2, and Nb2O5 were used as the metal electrode, active channel, and conductance-modulating layer, respectively. Interestingly, it was found that the post-synaptic current was successfully modulated by the thickness of the interlayer Nb2O5, with a thicker interlayer inducing a higher synapse spike current and a stronger interaction in the sequential pulse mode. Introduction of the Nb2O5 interlayer can facilitate the realization of reliable and controllable synaptic devices for brain-inspired integrated neuromorphic systems.
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Corletto A, Shapter JG. Nanoscale Patterning of Carbon Nanotubes: Techniques, Applications, and Future. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 8:2001778. [PMID: 33437571 PMCID: PMC7788638 DOI: 10.1002/advs.202001778] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2020] [Revised: 07/30/2020] [Indexed: 05/09/2023]
Abstract
Carbon nanotube (CNT) devices and electronics are achieving maturity and directly competing or surpassing devices that use conventional materials. CNTs have demonstrated ballistic conduction, minimal scaling effects, high current capacity, low power requirements, and excellent optical/photonic properties; making them the ideal candidate for a new material to replace conventional materials in next-generation electronic and photonic systems. CNTs also demonstrate high stability and flexibility, allowing them to be used in flexible, printable, and/or biocompatible electronics. However, a major challenge to fully commercialize these devices is the scalable placement of CNTs into desired micro/nanopatterns and architectures to translate the superior properties of CNTs into macroscale devices. Precise and high throughput patterning becomes increasingly difficult at nanoscale resolution, but it is essential to fully realize the benefits of CNTs. The relatively long, high aspect ratio structures of CNTs must be preserved to maintain their functionalities, consequently making them more difficult to pattern than conventional materials like metals and polymers. This review comprehensively explores the recent development of innovative CNT patterning techniques with nanoscale lateral resolution. Each technique is critically analyzed and applications for the nanoscale-resolution approaches are demonstrated. Promising techniques and the challenges ahead for future devices and applications are discussed.
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Affiliation(s)
- Alexander Corletto
- Australian Institute for Bioengineering and NanotechnologyThe University of QueenslandBrisbaneQueensland4072Australia
| | - Joseph G. Shapter
- Australian Institute for Bioengineering and NanotechnologyThe University of QueenslandBrisbaneQueensland4072Australia
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36
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Kim S, Lee Y, Kim HD, Choi SJ. Precision-extension technique for accurate vector-matrix multiplication with a CNT transistor crossbar array. NANOSCALE 2019; 11:21449-21457. [PMID: 31682243 DOI: 10.1039/c9nr06715a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Most machine learning algorithms involve many multiply-accumulate operations, which dictate the computation time and energy required. Vector-matrix multiplications can be accelerated using resistive networks, which can be naturally implemented in a crossbar geometry by leveraging Kirchhoff's current law in a single readout step. However, practical computing tasks that require high precision are still very challenging to implement in a resistive crossbar array owing to intrinsic device variability and unavoidable crosstalk, such as sneak path currents through adjacent devices, which inherently result in low precision. Here, we experimentally demonstrate a precision-extension technique for a carbon nanotube (CNT) transistor crossbar array. High precision is attained through multiple devices operating together, each of which stores a portion of the required bit width. A 10 × 10 CNT transistor array can perform vector-matrix multiplication with high accuracy, making in-memory computing approaches attractive for high-performance computing environments.
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Affiliation(s)
- Sungho Kim
- Department of Electrical Engineering, Sejong University, Seoul 05006, Korea
| | - Yongwoo Lee
- School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
| | - Hee-Dong Kim
- Department of Electrical Engineering, Sejong University, Seoul 05006, Korea
| | - Sung-Jin Choi
- School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
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37
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Kang D, Kim J, Oh S, Park H, Dugasani SR, Kang B, Choi C, Choi R, Lee S, Park SH, Heo K, Park J. A Neuromorphic Device Implemented on a Salmon-DNA Electrolyte and its Application to Artificial Neural Networks. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1901265. [PMID: 31508292 PMCID: PMC6724472 DOI: 10.1002/advs.201901265] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2019] [Indexed: 05/24/2023]
Abstract
A bioinspired neuromorphic device operating as synapse and neuron simultaneously, which is fabricated on an electrolyte based on Cu2+-doped salmon deoxyribonucleic acid (S-DNA) is reported. Owing to the slow Cu2+ diffusion through the base pairing sites in the S-DNA electrolyte, the synaptic operation of the S-DNA device features special long-term plasticity with negative and positive nonlinearity values for potentiation and depression (αp and αd), respectively, which consequently improves the learning/recognition efficiency of S-DNA-based neural networks. Furthermore, the representative neuronal operation, "integrate-and-fire," is successfully emulated in this device by adjusting the duration time of the input voltage stimulus. In particular, by applying a Cu2+ doping technique to the S-DNA neuromorphic device, the characteristics for synaptic weight updating are enhanced (|αp|: 31→20, |αd|: 11→18, weight update margin: 33→287 nS) and also the threshold conditions for neuronal firing (amplitude and number of stimulus pulses) are modulated. The improved synaptic characteristics consequently increase the Modified National Institute of Standards and Technology (MNIST) pattern recognition rate from 38% to 44% (single-layer perceptron model) and from 89.42% to 91.61% (multilayer perceptron model). This neuromorphic device technology based on S-DNA is expected to contribute to the successful implementation of a future neuromorphic system that simultaneously satisfies high integration density and remarkable recognition accuracy.
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Affiliation(s)
- Dong‐Ho Kang
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
- School of Electrical and Electronic EngineeringNanyang Technological University50 Nanyang Avenue639798SingaporeSingapore
| | - Jeong‐Hoon Kim
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Seyong Oh
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Hyung‐Youl Park
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | | | - Beom‐Seok Kang
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Changhwan Choi
- Division of Materials Science and EngineeringHanyang UniversitySeoul133–791South Korea
| | - Rino Choi
- Material Science and EngineeringInha UniversityIncheon402–751South Korea
| | - Sungjoo Lee
- SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon440–746South Korea
| | - Sung Ha Park
- Department of PhysicsSungkyunkwan UniversitySuwon440‐746South Korea
| | - Keun Heo
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Jin‐Hong Park
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
- SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon440–746South Korea
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Baraban L, Ibarlucea B, Baek E, Cuniberti G. Hybrid Silicon Nanowire Devices and Their Functional Diversity. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1900522. [PMID: 31406669 PMCID: PMC6685480 DOI: 10.1002/advs.201900522] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2019] [Revised: 04/25/2019] [Indexed: 05/06/2023]
Abstract
In the pool of nanostructured materials, silicon nanostructures are known as conventionally used building blocks of commercially available electronic devices. Their application areas span from miniaturized elements of devices and circuits to ultrasensitive biosensors for diagnostics. In this Review, the current trends in the developments of silicon nanowire-based devices are summarized, and their functionalities, novel architectures, and applications are discussed from the point of view of analog electronics, arisen from the ability of (bio)chemical gating of the carrier channel. Hybrid nanowire-based devices are introduced and described as systems decorated by, e.g., organic complexes (biomolecules, polymers, and organic films), aimed to substantially extend their functionality, compared to traditional systems. Their functional diversity is explored considering their architecture as well as areas of their applications, outlining several groups of devices that benefit from the coatings. The first group is the biosensors that are able to represent label-free assays thanks to the attached biological receptors. The second group is represented by devices for optoelectronics that acquire higher optical sensitivity or efficiency due to the specific photosensitive decoration of the nanowires. Finally, the so-called new bioinspired neuromorphic devices are shown, which are aimed to mimic the functions of the biological cells, e.g., neurons and synapses.
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Affiliation(s)
- Larysa Baraban
- Max Bergmann Center of Biomaterials and Institute for Materials ScienceTechnische Universität Dresden01062DresdenGermany
- Center for Advancing Electronics Dresden (CfAED) TU Dresden01062DresdenGermany
| | - Bergoi Ibarlucea
- Max Bergmann Center of Biomaterials and Institute for Materials ScienceTechnische Universität Dresden01062DresdenGermany
- Center for Advancing Electronics Dresden (CfAED) TU Dresden01062DresdenGermany
| | - Eunhye Baek
- Max Bergmann Center of Biomaterials and Institute for Materials ScienceTechnische Universität Dresden01062DresdenGermany
- Center for Advancing Electronics Dresden (CfAED) TU Dresden01062DresdenGermany
| | - Gianaurelio Cuniberti
- Max Bergmann Center of Biomaterials and Institute for Materials ScienceTechnische Universität Dresden01062DresdenGermany
- Center for Advancing Electronics Dresden (CfAED) TU Dresden01062DresdenGermany
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Han H, Yu H, Wei H, Gong J, Xu W. Recent Progress in Three-Terminal Artificial Synapses: From Device to System. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1900695. [PMID: 30972944 DOI: 10.1002/smll.201900695] [Citation(s) in RCA: 83] [Impact Index Per Article: 16.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2019] [Revised: 03/03/2019] [Indexed: 05/28/2023]
Abstract
Synapses are essential to the transmission of nervous signals. Synaptic plasticity allows changes in synaptic strength that make a brain capable of learning from experience. During development of neuromorphic electronics, great efforts have been made to design and fabricate electronic devices that emulate synapses. Three-terminal artificial synapses have the merits of concurrently transmitting signals and learning. Inorganic and organic electronic synapses have mimicked plasticity and learning. Optoelectronic synapses and photonic synapses have the prospective benefits of low electrical energy loss, high bandwidth, and mechanical robustness. These artificial synapses provide new opportunities for the development of neuromorphic systems that can use parallel processing to manipulate datasets in real time. Synaptic devices have also been used to build artificial sensory systems. Here, recent progress in the development and application of three-terminal artificial synapses and artificial sensory systems is reviewed.
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Affiliation(s)
- Hong Han
- Institute of Optoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Tianjin, 300350, China
| | - Haiyang Yu
- Institute of Optoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Tianjin, 300350, China
| | - Huanhuan Wei
- Institute of Optoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Tianjin, 300350, China
| | - Jiangdong Gong
- Institute of Optoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Tianjin, 300350, China
| | - Wentao Xu
- Institute of Optoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300350, China
- Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Tianjin, 300350, China
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Shen SH, Wang XF, Tian Y, Li MR, Yang Y, Ren TL. Laser-reconfigured MoS 2/ZnO van der Waals synapse. NANOSCALE 2019; 11:11114-11120. [PMID: 31166339 DOI: 10.1039/c9nr01748h] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Inspired by biological neural systems, neuromorphic devices may lead to new computing paradigms for exploring cognition, learning and limits of parallel computation. Synapses form the basis of neuromorphic computing and have attracted significant research interest in recent years. Herein, a three-terminal transistor based on a transition metal sulfide and zinc oxide heterojunction is proposed for emulating biological synapses. The transistor exhibits an ON/OFF ratio (104) and significant rectifying behavior with forward-to-reverse bias current ratios of 104. The device demonstrates the essential synaptic behaviors, such as excitatory postsynaptic current, modulation of synaptic weight and paired-pulse facilitation. Furthermore, we show that the hysteretic effect of the transfer curves and the post-synapse current triggered by the presynaptic pulses can be modulated by illumination, and the current under illumination conditions is about 10 times greater than that in the dark. These synapses combine photonic with electric neuromorphic functions, thus showing the application prospects of the optoelectronic interfaces for integrated photonic circuits based on mixed-mode electro-optical operation. Hence, this work offers a new landscape for 2D-material electronics and encourages future research on neuro-electronics.
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Affiliation(s)
- Shu-Hong Shen
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China and Tsinghua Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Xue-Feng Wang
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China and Tsinghua Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Ye Tian
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China and Tsinghua Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Ming-Rui Li
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China and Tsinghua Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Yi Yang
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China and Tsinghua Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Tian-Ling Ren
- Institute of Microelectronics, Tsinghua University, Beijing 100084, China and Tsinghua Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
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41
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Ge C, Liu CX, Zhou QL, Zhang QH, Du JY, Li JK, Wang C, Gu L, Yang GZ, Jin KJ. A Ferrite Synaptic Transistor with Topotactic Transformation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1900379. [PMID: 30924206 DOI: 10.1002/adfm.201902702] [Citation(s) in RCA: 35] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2019] [Revised: 03/14/2019] [Indexed: 05/28/2023]
Abstract
Hardware implementation of artificial synaptic devices that emulate the functions of biological synapses is inspired by the biological neuromorphic system and has drawn considerable interest. Here, a three-terminal ferrite synaptic device based on a topotactic phase transition between crystalline phases is presented. The electrolyte-gating-controlled topotactic phase transformation between brownmillerite SrFeO2.5 and perovskite SrFeO3- δ is confirmed from the examination of the crystal and electronic structure. A synaptic transistor with electrolyte-gated ferrite films by harnessing gate-controllable multilevel conduction states, which originate from many distinct oxygen-deficient perovskite structures of SrFeOx induced by topotactic phase transformation, is successfully constructed. This three-terminal artificial synapse can mimic important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. Simulations of a neural network consisting of ferrite synaptic transistors indicate that the system offers high classification accuracy. These results provide insight into the potential application of advanced topotactic phase transformation materials for designing artificial synapses with high performance.
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Affiliation(s)
- Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Chang-Xiang Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Physics, Capital Normal University, Beijing, 100048, China
| | - Qing-Li Zhou
- Department of Physics, Capital Normal University, Beijing, 100048, China
| | - Qing-Hua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jian-Yu Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jian-Kun Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Guo-Zhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
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Gerasimov JY, Gabrielsson R, Forchheimer R, Stavrinidou E, Simon DT, Berggren M, Fabiano S. An Evolvable Organic Electrochemical Transistor for Neuromorphic Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1801339. [PMID: 30989020 PMCID: PMC6446606 DOI: 10.1002/advs.201801339] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2018] [Revised: 12/07/2018] [Indexed: 05/20/2023]
Abstract
An evolvable organic electrochemical transistor (OECT), operating in the hybrid accumulation-depletion mode is reported, which exhibits short-term and long-term memory functionalities. The transistor channel, formed by an electropolymerized conducting polymer, can be formed, modulated, and obliterated in situ and under operation. Enduring changes in channel conductance, analogous to long-term potentiation and depression, are attained by electropolymerization and electrochemical overoxidation of the channel material, respectively. Transient changes in channel conductance, analogous to short-term potentiation and depression, are accomplished by inducing nonequilibrium doping states within the transistor channel. By manipulating the input signal, the strength of the transistor response to a given stimulus can be modulated within a range that spans several orders of magnitude, producing behavior that is directly comparable to short- and long-term neuroplasticity. The evolvable transistor is further incorporated into a simple circuit that mimics classical conditioning. It is forecasted that OECTs that can be physically and electronically modulated under operation will bring about a new paradigm of machine learning based on evolvable organic electronics.
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Affiliation(s)
- Jennifer Y. Gerasimov
- Laboratory of Organic ElectronicsDepartment of Science and TechnologyLinköping UniversitySE‐601 74NorrköpingSweden
| | - Roger Gabrielsson
- Laboratory of Organic ElectronicsDepartment of Science and TechnologyLinköping UniversitySE‐601 74NorrköpingSweden
| | - Robert Forchheimer
- Department of Electrical EngineeringLinköping UniversitySE‐581 83LinköpingSweden
| | - Eleni Stavrinidou
- Laboratory of Organic ElectronicsDepartment of Science and TechnologyLinköping UniversitySE‐601 74NorrköpingSweden
| | - Daniel T. Simon
- Laboratory of Organic ElectronicsDepartment of Science and TechnologyLinköping UniversitySE‐601 74NorrköpingSweden
| | - Magnus Berggren
- Laboratory of Organic ElectronicsDepartment of Science and TechnologyLinköping UniversitySE‐601 74NorrköpingSweden
| | - Simone Fabiano
- Laboratory of Organic ElectronicsDepartment of Science and TechnologyLinköping UniversitySE‐601 74NorrköpingSweden
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43
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Chen Y, Yu H, Gong J, Ma M, Han H, Wei H, Xu W. Artificial synapses based on nanomaterials. NANOTECHNOLOGY 2019; 30:012001. [PMID: 30256764 DOI: 10.1088/1361-6528/aae470] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Artificial synapses emulate biological synaptic signals in neuromorphic systems to attain brain-like computation and autonomous learning behaviors in non-von-Neumann systems. Several classes of materials have been applied to this field to achieve numerous functionalities of biological synapses. Nanomaterials (NMs), such as one-dimensional (1D) and two-dimensional (2D) NMs have shown great potential due to their nanometer feature size (1D) and molecular-level thickness (2D). In this paper, we review the development of artificial synapses, and discuss state-of-the-art artificial synapses based on NMs.
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Affiliation(s)
- Yihang Chen
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, No. 38 Tongyan Road, Haihe Education Park, Tianjin 300350, People's Republic of China. Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, No. 38 Tongyan Road, Haihe Education Park, Tianjin 300350, People's Republic of China
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Zhang Z, Li T, Wu Y, Jia Y, Tan C, Xu X, Wang G, Lv J, Zhang W, He Y, Pei J, Ma C, Li G, Xu H, Shi L, Peng H, Li H. Truly Concomitant and Independently Expressed Short- and Long-Term Plasticity in a Bi 2 O 2 Se-Based Three-Terminal Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1805769. [PMID: 30461090 DOI: 10.1002/adma.201805769] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2018] [Revised: 10/29/2018] [Indexed: 06/09/2023]
Abstract
Concomitance of diverse synaptic plasticity across different timescales produces complex cognitive processes. To achieve comparable cognitive complexity in memristive neuromorphic systems, devices that are capable of emulating short-term (STP) and long-term plasticity (LTP) concomitantly are essential. In existing memristors, however, STP and LTP can only be induced selectively because of the inability to be decoupled using different loci and mechanisms. In this work, the first demonstration of truly concomitant STP and LTP is reported in a three-terminal memristor that uses independent physical phenomena to represent each form of plasticity. The emerging layered material Bi2 O2 Se is used for memristors for the first time, opening up the prospects for ultrathin, high-speed, and low-power neuromorphic devices. The concerted action of STP and LTP allows full-range modulation of the transient synaptic efficacy, from depression to facilitation, by stimulus frequency or intensity, providing a versatile device platform for neuromorphic function implementation. A heuristic recurrent neural circuitry model is developed to simulate the intricate "sleep-wake cycle autoregulation" process, in which the concomitance of STP and LTP is posited as a key factor in enabling this neural homeostasis. This work sheds new light on the development of generic memristor platforms for highly dynamic neuromorphic computing.
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Affiliation(s)
- Ziyang Zhang
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China
| | - Tianran Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Yujie Wu
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China
| | - Yinjun Jia
- School of Life Sciences, Tsinghua-Peking Joint Center for Life Sciences, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing, 100084, China
| | - Congwei Tan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Xintong Xu
- School of Aerospace Engineering, Tsinghua University, Beijing, 100084, China
| | - Guanrui Wang
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China
| | - Juan Lv
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China
| | - Wei Zhang
- School of Life Sciences, Tsinghua-Peking Joint Center for Life Sciences, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing, 100084, China
| | - Yuhan He
- Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
| | - Jing Pei
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China
| | - Cheng Ma
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China
| | - Guoqi Li
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China
| | - Haizheng Xu
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China
| | - Luping Shi
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Huanglong Li
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing, 100084, China
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Artificial optic-neural synapse for colored and color-mixed pattern recognition. Nat Commun 2018; 9:5106. [PMID: 30504804 PMCID: PMC6269540 DOI: 10.1038/s41467-018-07572-5] [Citation(s) in RCA: 227] [Impact Index Per Article: 37.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/08/2018] [Accepted: 11/06/2018] [Indexed: 11/25/2022] Open
Abstract
The priority of synaptic device researches has been given to prove the device potential for the emulation of synaptic dynamics and not to functionalize further synaptic devices for more complex learning. Here, we demonstrate an optic-neural synaptic device by implementing synaptic and optical-sensing functions together on h-BN/WSe2 heterostructure. This device mimics the colored and color-mixed pattern recognition capabilities of the human vision system when arranged in an optic-neural network. Our synaptic device demonstrates a close to linear weight update trajectory while providing a large number of stable conduction states with less than 1% variation per state. The device operates with low voltage spikes of 0.3 V and consumes only 66 fJ per spike. This consequently facilitates the demonstration of accurate and energy efficient colored and color-mixed pattern recognition. The work will be an important step toward neural networks that comprise neural sensing and training functions for more complex pattern recognition. Artificial neural networks can emulate the human vision because of their spike-based operation by employing memristors as synapses. Here, Seo et al. integrate synaptic and optical sensing functions in a single heterostructure, which enables accurate and energy-efficient recognition of colored patterns.
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46
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Kim S, Choi B, Lim M, Kim Y, Kim HD, Choi SJ. Synaptic Device Network Architecture with Feature Extraction for Unsupervised Image Classification. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1800521. [PMID: 30009414 DOI: 10.1002/smll.201800521] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2018] [Revised: 05/07/2018] [Indexed: 06/08/2023]
Abstract
For the efficient recognition and classification of numerous images, neuroinspired deep learning algorithms have demonstrated their substantial performance. Nevertheless, current deep learning algorithms that are performed on von Neumann machines face significant limitations due to their inherent inefficient energy consumption. Thus, alternative approaches (i.e., neuromorphic systems) are expected to provide more energy-efficient computing units. However, the implementation of the neuromorphic system is still challenging due to the uncertain impacts of synaptic device specifications on system performance. Moreover, only few studies are reported how to implement feature extraction algorithms on the neuromorphic system. Here, a synaptic device network architecture with a feature extraction algorithm inspired by the convolutional neural network is demonstrated. Its pattern recognition efficacy is validated using a device-to-system level simulation. The network can classify handwritten digits at up to a 90% recognition rate despite using fewer synaptic devices than the architecture without feature extraction.
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Affiliation(s)
- Sungho Kim
- Department of Electrical Engineering, Sejong University, Seoul, 05006, South Korea
| | - Bongsik Choi
- School of Electrical Engineering, Kookmin University, Seoul, 02707, South Korea
| | - Meehyun Lim
- Mechatronics R&D Center, Samsung Electronics, Gyonggi-do, 18448, South Korea
| | - Yeamin Kim
- School of Electrical Engineering, Kookmin University, Seoul, 02707, South Korea
| | - Hee-Dong Kim
- Department of Electrical Engineering, Sejong University, Seoul, 05006, South Korea
| | - Sung-Jin Choi
- School of Electrical Engineering, Kookmin University, Seoul, 02707, South Korea
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Sanchez Esqueda I, Yan X, Rutherglen C, Kane A, Cain T, Marsh P, Liu Q, Galatsis K, Wang H, Zhou C. Aligned Carbon Nanotube Synaptic Transistors for Large-Scale Neuromorphic Computing. ACS NANO 2018; 12:7352-7361. [PMID: 29944826 DOI: 10.1021/acsnano.8b03831] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
This paper presents aligned carbon nanotube (CNT) synaptic transistors for large-scale neuromorphic computing systems. The synaptic behavior of these devices is achieved via charge-trapping effects, commonly observed in carbon-based nanoelectronics. In this work, charge trapping in the high- k dielectric layer of top-gated CNT field-effect transistors (FETs) enables the gradual analog programmability of the CNT channel conductance with a large dynamic range ( i. e., large on/off ratio). Aligned CNT synaptic devices present significant improvements over conventional memristor technologies ( e. g., RRAM), which suffer from abrupt transitions in the conductance modulation and/or a small dynamic range. Here, we demonstrate exceptional uniformity of aligned CNT FET synaptic behavior, as well as significant robustness and nonvolatility via pulsed experiments, establishing their suitability for neural network implementations. Additionally, this technology is based on a wafer-level technique for constructing highly aligned arrays of CNTs with high semiconducting purity and is fully CMOS compatible, ensuring the practicality of large-scale CNT+CMOS neuromorphic systems. We also demonstrate fine-tunability of the aligned CNT synaptic behavior and discuss its application to adaptive online learning schemes and to homeostatic regulation of artificial neuron firing rates. We simulate the implementation of unsupervised learning for pattern recognition using a spike-timing-dependent-plasticity scheme, indicate system-level performance (as indicated by the recognition accuracy), and demonstrate improvements in the learning rate resulting from tuning the synaptic characteristics of aligned CNT devices.
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Affiliation(s)
- Ivan Sanchez Esqueda
- Information Sciences Institute , University of Southern California , Marina del Rey , California 90292 , United States
| | - Xiaodong Yan
- Ming Hsieh Department of Electrical Engineering , University of Southern California , Los Angeles , California 90089 , United States
| | | | - Alex Kane
- Carbonics Inc. , Culver City , California 90230 , United States
| | - Tyler Cain
- Carbonics Inc. , Culver City , California 90230 , United States
| | - Phil Marsh
- Carbonics Inc. , Culver City , California 90230 , United States
| | - Qingzhou Liu
- Ming Hsieh Department of Electrical Engineering , University of Southern California , Los Angeles , California 90089 , United States
| | - Kosmas Galatsis
- Carbonics Inc. , Culver City , California 90230 , United States
| | - Han Wang
- Ming Hsieh Department of Electrical Engineering , University of Southern California , Los Angeles , California 90089 , United States
| | - Chongwu Zhou
- Ming Hsieh Department of Electrical Engineering , University of Southern California , Los Angeles , California 90089 , United States
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Nirmalraj P, Dos Santos MC, Salazar Rios JM, Davila D, Vargas F, Scherf U, Loi MA. Polymer-Nanocarbon Topological and Electronic Interface. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2018; 34:6225-6230. [PMID: 29733657 DOI: 10.1021/acs.langmuir.8b00485] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The electronic structure of semiconducting carbon nanotubes selected through polymer functionalization is routinely verified by measuring the spectral van Hove singularity signature under ultraclean vacuum conditions. Interpreting the effect of unperturbed polymer adsorption on the nanotube energetic bands in solvent media is experimentally challenging owing to solvent molecular crowding around the hybrid complex. Here, a liquid-based scanning tunneling microscope and spectroscope operating in a noise-free laboratory is used to resolve the polymer-semiconducting carbon-nanotube-underlying graphene heterostructure in the presence of encompassing solvent molecules. The spectroscopic measurements highlight the role of polymer packing and graphene landscape on the electronic shifts induced in the nanotube energy bands. Together with molecular dynamics simulations, our experimental findings emphasize the necessity of recording physicochemical and electronic properties of liquid-phase solubilized hybrid materials in their native state.
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Affiliation(s)
- Peter Nirmalraj
- IBM Research - Zurich , Säumerstrasse 4 , CH-8803 Rüschlikon , Switzerland
- Adolphe Merkle Institute , University of Fribourg , Chemin des Verdiers 4 , CH-1700 Fribourg , Switzerland
| | - Maria Cristina Dos Santos
- Photophysics and OptoElectronics, Zernike Institute of Advanced Materials , University of Groningen , Groningen 9747 , The Netherlands
| | - Jorge Mario Salazar Rios
- Photophysics and OptoElectronics, Zernike Institute of Advanced Materials , University of Groningen , Groningen 9747 , The Netherlands
| | - Diana Davila
- IBM Research - Zurich , Säumerstrasse 4 , CH-8803 Rüschlikon , Switzerland
| | - Fiorella Vargas
- IBM Research - Zurich , Säumerstrasse 4 , CH-8803 Rüschlikon , Switzerland
| | - Ullrich Scherf
- Macromolecular Chemistry , Bergische Universität Wuppertal , Gauss-Str. 20 , D-42119 Wuppertal , Germany
| | - Maria Antonietta Loi
- Photophysics and OptoElectronics, Zernike Institute of Advanced Materials , University of Groningen , Groningen 9747 , The Netherlands
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Sarkar D, Tao J, Wang W, Lin Q, Yeung M, Ren C, Kapadia R. Mimicking Biological Synaptic Functionality with an Indium Phosphide Synaptic Device on Silicon for Scalable Neuromorphic Computing. ACS NANO 2018; 12:1656-1663. [PMID: 29328623 DOI: 10.1021/acsnano.7b08272] [Citation(s) in RCA: 33] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Neuromorphic or "brain-like" computation is a leading candidate for efficient, fault-tolerant processing of large-scale data as well as real-time sensing and transduction of complex multivariate systems and networks such as self-driving vehicles or Internet of Things applications. In biology, the synapse serves as an active memory unit in the neural system and is the component responsible for learning and memory. Electronically emulating this element via a compact, scalable technology which can be integrated in a three-dimensional (3-D) architecture is critical for future implementations of neuromorphic processors. However, present day 3-D transistor implementations of synapses are typically based on low-mobility semiconductor channels or technologies that are not scalable. Here, we demonstrate a crystalline indium phosphide (InP)-based artificial synapse for spiking neural networks that exhibits elasticity, short-term plasticity, long-term plasticity, metaplasticity, and spike timing-dependent plasticity, emulating the critical behaviors exhibited by biological synapses. Critically, we show that this crystalline InP device can be directly integrated via back-end processing on a Si wafer using a SiO2 buffer without the need for a crystalline seed, enabling neuromorphic devices that can be implemented in a scalable and 3-D architecture. Specifically, the device is a crystalline InP channel field-effect transistor that interacts with neuron spikes by modification of the population of filled traps in the MOS structure itself. Unlike other transistor-based implementations, we show that it is possible to mimic these biological functions without the use of external factors (e.g., surface adsorption of gas molecules) and without the need for the high electric fields necessary for traditional flash-based implementations. Finally, when exposed to neuronal spikes with a waveform similar to that observed in the brain, these devices exhibit the ability to learn without the need for any external potentiating/depressing circuits, mimicking the biological process of Hebbian learning.
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Affiliation(s)
- Debarghya Sarkar
- Ming Hsieh Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
| | - Jun Tao
- Ming Hsieh Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
| | - Wei Wang
- Ming Hsieh Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
| | - Qingfeng Lin
- Ming Hsieh Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
| | - Matthew Yeung
- Ming Hsieh Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
| | - Chenhao Ren
- Ming Hsieh Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
| | - Rehan Kapadia
- Ming Hsieh Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States
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Kim S, Lim M, Kim Y, Kim HD, Choi SJ. Impact of Synaptic Device Variations on Pattern Recognition Accuracy in a Hardware Neural Network. Sci Rep 2018; 8:2638. [PMID: 29422641 PMCID: PMC5805704 DOI: 10.1038/s41598-018-21057-x] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/02/2017] [Accepted: 01/29/2018] [Indexed: 11/25/2022] Open
Abstract
Neuromorphic systems (hardware neural networks) derive inspiration from biological neural systems and are expected to be a computing breakthrough beyond conventional von Neumann architecture. Interestingly, in neuromorphic systems, the processing and storing of information can be performed simultaneously by modulating the connection strength of a synaptic device (i.e., synaptic weight). Previously investigated synaptic devices can emulate the functionality of biological synapses successfully by utilizing various nano-electronic phenomena; however, the impact of intrinsic synaptic device variability on the system performance has not yet been studied. Here, we perform a device-to-system level simulation of different synaptic device variation parameters in a designed neuromorphic system that has the potential for unsupervised learning and pattern recognition. The effects of variations in parameters such as the weight modulation nonlinearity (NL), the minimum-maximum weight (Gmin and Gmax), and the weight update margin (ΔG) on the pattern recognition accuracy are analyzed quantitatively. These simulation results can provide guidelines for the continued design and optimization of a synaptic device for realizing a functional large-scale neuromorphic computing system.
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Affiliation(s)
- Sungho Kim
- Department of Electrical Engineering, Sejong University, Seoul, 05006, Korea
| | - Meehyun Lim
- Mechatronics R&D Center, Samsung Electronics, Gyonggi-do, 18448, Korea
| | - Yeamin Kim
- School of Electrical Engineering, Kookmin University, Seoul, 02707, Korea
| | - Hee-Dong Kim
- Department of Electrical Engineering, Sejong University, Seoul, 05006, Korea
| | - Sung-Jin Choi
- School of Electrical Engineering, Kookmin University, Seoul, 02707, Korea.
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