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Liu HY, Wu JY. Tunable Electronic Properties of Two-Dimensional GaSe 1-xTe x Alloys. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:818. [PMID: 36903697 PMCID: PMC10005243 DOI: 10.3390/nano13050818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/04/2023] [Revised: 02/18/2023] [Accepted: 02/21/2023] [Indexed: 06/18/2023]
Abstract
In this work, we performed a theoretical study on the electronic properties of monolayer GaSe1-xTex alloys using the first-principles calculations. The substitution of Se by Te results in the modification of a geometric structure, charge redistribution, and bandgap variation. These remarkable effects originate from the complex orbital hybridizations. We demonstrate that the energy bands, the spatial charge density, and the projected density of states (PDOS) of this alloy are strongly dependent on the substituted Te concentration.
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Affiliation(s)
- Hsin-Yi Liu
- Department of Physics/QTC/Hi-GEM, National Cheng Kung University, Tainan 701, Taiwan
| | - Jhao-Ying Wu
- Center of General Studies, National Kaohsiung University of Science and Technology, Kaohsiung 811, Taiwan
- Department of Energy and Refrigerating Air-Conditioning Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 811, Taiwan
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2
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Noh G, Song H, Choi H, Kim M, Jeong JH, Lee Y, Choi MY, Oh S, Jo MK, Woo DY, Jo Y, Park E, Moon E, Kim TS, Chai HJ, Huh W, Lee CH, Kim CJ, Yang H, Song S, Jeong HY, Kim YS, Lee GH, Lim J, Kim CG, Chung TM, Kwak JY, Kang K. Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge 4 Se 9. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204982. [PMID: 36000232 DOI: 10.1002/adma.202204982] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2022] [Revised: 08/12/2022] [Indexed: 06/15/2023]
Abstract
Van der Waals (vdW) heterostructures have drawn much interest over the last decade owing to their absence of dangling bonds and their intriguing low-dimensional properties. The emergence of 2D materials has enabled the achievement of significant progress in both the discovery of physical phenomena and the realization of superior devices. In this work, the group IV metal chalcogenide 2D-layered Ge4 Se9 is introduced as a new selection of insulating vdW material. 2D-layered Ge4 Se9 is synthesized with a rectangular shape using the metalcorganic chemical vapor deposition system using a liquid germanium precursor at 240 °C. By stacking the Ge4 Se9 and MoS2 , vdW heterostructure devices are fabricated with a giant memory window of 129 V by sweeping back gate range of ±80 V. The gate-independent decay time reveals that the large hysteresis is induced by the interfacial charge transfer, which originates from the low band offset. Moreover, repeatable conductance changes are observed over the 2250 pulses with low non-linearity values of 0.26 and 0.95 for potentiation and depression curves, respectively. The energy consumption of the MoS2 /Ge4 Se9 device is about 15 fJ for operating energy and the learning accuracy of image classification reaches 88.3%, which further proves the great potential of artificial synapses.
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Affiliation(s)
- Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
- Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Heenang Choi
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea
| | - Mingyu Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Jae Hwan Jeong
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Korea
| | - Yongjoon Lee
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Min-Yeong Choi
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Saeyoung Oh
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
- Operando Methodology and Measurement Team, Korea Research Institute of Standards & Science (KRISS), Daejeon, 34113, Korea
| | - Dong Yeon Woo
- Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea
| | - Yooyeon Jo
- Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea
| | - Eunpyo Park
- Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea
| | - Eoram Moon
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Woong Huh
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Korea
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Korea
- Advanced Materials Research Division, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea
| | - Cheol-Joo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Senugwoo Song
- Operando Methodology and Measurement Team, Korea Research Institute of Standards & Science (KRISS), Daejeon, 34113, Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Korea
| | - Yong-Sung Kim
- Low-Dimensional Material Team, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea
| | - Jongsun Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea
| | - Chang Gyoun Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea
| | - Taek-Mo Chung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea
| | - Joon Young Kwak
- Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea
- Division of Nanoscience and Technology, Korea University of Science and Technology (UST), Daejeon, 34113, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
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Hu H, Wang H, Sun Y, Li J, Wei J, Xie D, Zhu H. Out-of-plane and in-plane ferroelectricity of atom-thick two-dimensional InSe. NANOTECHNOLOGY 2021; 32:385202. [PMID: 34116515 DOI: 10.1088/1361-6528/ac0ac5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2021] [Accepted: 06/11/2021] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) ferroelectric materials are promising substitutes of three-dimensional perovskite based ferroelectric ceramic materials. Yet most studies have been focused on the construction of non-centrosymmetric 2D van der Waals materials and only a few are constructed experimentally. Herein, we experimentally demonstrate the co-existence of voltage-tunable out-of-plane (OOP) and in-plane (IP) ferroelectricity in few-layer InSe prepared by a solution-processable method and fabricate ferroelectric semiconductor channel transistors. The reversible polarization can initiate instant switch of resistance with high ON/OFF ratios and a comparable subthreshold swing of 160 mV/dec under gate modulation. The origins of such unique OOP and IP ferroelectricity of the centrosymmetric structure are theoretically analyzed.
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Affiliation(s)
- Haowen Hu
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Huaipeng Wang
- Beijing National Research Center for Information Science and Technology (BNRist), Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Yilin Sun
- Beijing National Research Center for Information Science and Technology (BNRist), Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
- School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Jiawei Li
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jinliang Wei
- Beijing National Research Center for Information Science and Technology (BNRist), Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Dan Xie
- Beijing National Research Center for Information Science and Technology (BNRist), Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Hongwei Zhu
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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Wang Y, Liu S, Li Q, Quhe R, Yang C, Guo Y, Zhang X, Pan Y, Li J, Zhang H, Xu L, Shi B, Tang H, Li Y, Yang J, Zhang Z, Xiao L, Pan F, Lu J. Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:056501. [PMID: 33761489 DOI: 10.1088/1361-6633/abf1d4] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2020] [Accepted: 03/24/2021] [Indexed: 06/12/2023]
Abstract
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal properties, which hold potential in electronic, optoelectronic, thermoelectric applications, and so forth. The field-effect transistor (FET), a semiconductor gated with at least three terminals, is pervasively exploited as the device geometry for these applications. For lack of effective and stable substitutional doping techniques, direct metal contact is often used in 2DSC FETs to inject carriers. A Schottky barrier (SB) generally exists in the metal-2DSC junction, which significantly affects and even dominates the performance of most 2DSC FETs. Therefore, low SB or Ohmic contact is highly preferred for approaching the intrinsic characteristics of the 2DSC channel. In this review, we systematically introduce the recent progress made in theoretical prediction of the SB height (SBH) in the 2DSC FETs and the efforts made both in theory and experiments to achieve low SB contacts. From the comparison between the theoretical and experimentally observed SBHs, the emerging first-principles quantum transport simulation turns out to be the most powerful theoretical tool to calculate the SBH of a 2DSC FET. Finally, we conclude this review from the viewpoints of state-of-the-art electrode designs for 2DSC FETs.
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Affiliation(s)
- Yangyang Wang
- Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, People's Republic of China
| | - Shiqi Liu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Qiuhui Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Chen Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ying Guo
- School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, People's Republic of China
| | - Xiuying Zhang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Yuanyuan Pan
- State Key Laboratory of Heavy Oil Processing, Institute of New Energy, College of Chemical Engineering, China University of Petroleum (East China), Qingdao, 266580, People's Republic of China
| | - Jingzhen Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Han Zhang
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Bowen Shi
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Hao Tang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ying Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, People's Republic of China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Lin Xiao
- Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, People's Republic of China
| | - Feng Pan
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen 518055, People's Republic of China
| | - Jing Lu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, People's Republic of China
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Wen S, Lan C, Li C, Zhou S, He T, Zhang R, Zou R, Hu H, Yin Y, Liu Y. Gate-bias instability of few-layer WSe 2 field effect transistors. RSC Adv 2021; 11:6818-6824. [PMID: 35423215 PMCID: PMC8694931 DOI: 10.1039/d0ra09376a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/04/2020] [Accepted: 02/03/2021] [Indexed: 11/26/2022] Open
Abstract
Semiconducting two-dimensional (2D) layered materials have shown great potential in next-generation electronics due to their novel electronic properties. However, the performance of field effect transistors (FETs) based on 2D materials is always environment-dependent and unstable under gate bias stress. Here, we report the environment-dependent performance and gate-induced instability of few-layer p-type WSe2-based FETs. We found that the hole mobility of the transistor drastically reduces in vacuum and further decreases after in situ annealing in vacuum compared with that in air, which can be recovered after exposure to air. The on-current of the WSe2 FET increases with positive gate bias stress time but decreases with negative gate bias stress time. For the double sweeping transfer curve, the transistor shows prominent hysteresis, which depends on both the sweeping rate and the sweeping range. Large hysteresis can be observed when a slow sweeping rate or large sweeping range is applied. In addition, such gate-induced instability can be reduced in vacuum and further reduced after in situ vacuum annealing. However, the gate-induced instability cannot be fully eliminated, which suggests both gases adsorbed on the device and defects in the WSe2 channel and/or the interface of WSe2/SiO2 are responsible for the gate-induced instability. Our results provide a deep understanding of the gate-induced instability in p-type WSe2 based transistors, which may shed light on the design of high-performance 2D material-based electronics. The performance of the few-layer p-type WSe2-based field effect transistor is sensitive to the environment and gate bias stress.![]()
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Novel two-dimensional Ga(In)S1-Se as high-efficiency OER catalysts for photocatalytic water splitting. J SOLID STATE CHEM 2020. [DOI: 10.1016/j.jssc.2020.121730] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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7
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Kumar AS, Wang M, Li Y, Fujita R, Gao XPA. Interfacial Charge Transfer and Gate-Induced Hysteresis in Monochalcogenide InSe/GaSe Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2020; 12:46854-46861. [PMID: 32955239 DOI: 10.1021/acsami.0c09635] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Heterostructures of two-dimensional (2D) van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and stacking of 2D monochalcogenides InSe and GaSe, we observe charge transfer between InSe and GaSe because of the 2D van der Waals interface formation and a strong hysteresis effect in the electron transport through the InSe layer when a gate voltage is applied through the GaSe layer. A gate voltage-dependent conductance decay rate is also observed. We relate these observations to the gate voltage-dependent dynamical charge transfer between InSe and GaSe layers.
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Affiliation(s)
- Arvind Shankar Kumar
- Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio 44106, United States
| | - Mingyuan Wang
- Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio 44106, United States
| | - Yancheng Li
- Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio 44106, United States
| | - Ryuji Fujita
- Department of Physics, Oxford University, Parks Road, Oxford OX1 3PU, U.K
| | - Xuan P A Gao
- Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio 44106, United States
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Wang Y, Gao J, Wei B, Han Y, Wang C, Gao Y, Liu H, Han L, Zhang Y. Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications. NANOSCALE 2020; 12:18356-18362. [PMID: 32870216 DOI: 10.1039/d0nr04120c] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Indium selenide (InSe) photodetection devices attract significant research interest. However, InSe is unstable and degrades rapidly in ambient conditions, thus it is still a challenge to fabricate stable optoelectronic devices. In this work, multilayer InSe FETs are fabricated, and their photoresponse properties are investigated. Both positive and negative photoconductivities are observed for the first time in the same InSe FET in a wide spectral range from 450 nm to 660 nm, which can be tuned through changing either the gate bias or the source-drain bias. A physical mechanism is proposed to explain the dual-photoresponse phenomenon in our devices. Based on the proposed physical mechanism, as a proof of concept, a facile and simple approach is used to eliminate the negative photoconductivity of the InSe FET. Our results will offer valuable strategies for stable multilayer InSe optoelectronic device design, and a practical scheme for improving the performance of other transition metal dichalcogenide devices as well.
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Affiliation(s)
- Yanhao Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China.
| | - Jianwei Gao
- Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China.
| | - Bin Wei
- School of Microelectronics, Shandong University, Jinan 250010, China
| | - Yingkuan Han
- School of Microelectronics, Shandong University, Jinan 250010, China
| | - Chao Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China.
| | - Yakun Gao
- Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China.
| | - Hong Liu
- State Key Laboratory of Crystal Materials, Shandong University, Jinan 250010, China. and Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250010, China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China.
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao 266237, China.
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9
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Liu L, Wu L, Wang A, Liu H, Ma R, Wu K, Chen J, Zhou Z, Tian Y, Yang H, Shen C, Bao L, Qin Z, Pantelides ST, Gao HJ. Ferroelectric-Gated InSe Photodetectors with High On/Off Ratios and Photoresponsivity. NANO LETTERS 2020; 20:6666-6673. [PMID: 32822183 DOI: 10.1021/acs.nanolett.0c02448] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Indium selenide (InSe) has a high electron mobility and tunable direct band gap, enabling its potential applications to electronic and optoelectronic devices. Here, we report the fabrication of InSe photodetectors with high on/off ratios and ultrahigh photoresponsivity, using ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer films as the top-gate dielectric. Benefiting from the successful suppression of the dark current down to ∼10-14A in the InSe channel by tuning the three different polarization states in ferroelectric P(VDF-TrFE) and improved interface properties using h-BN as a substrate, the ferroelectric-gated InSe photodetectors show a high on/off ratio of over 108, a high photoresponsivity up to 14 250 AW-1, a high detectivity up to 1.63 × 1013 Jones, and a fast response time of 600 μs even at zero-gate voltage. The present results highlight the role of ferroelectric P(VDF-TrFE) in tuning the carrier transport of InSe and may provide an avenue for the development of InSe-based photodetectors.
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Affiliation(s)
- Li Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Liangmei Wu
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Aiwei Wang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Hongtao Liu
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Ruisong Ma
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Kang Wu
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Jiancui Chen
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Zhang Zhou
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Haitao Yang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Chengmin Shen
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Lihong Bao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Sokrates T Pantelides
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
- Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Hong-Jun Gao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
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10
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Chen F, Cui A, Wang X, Gao C, Xu L, Jiang K, Zhang J, Hu Z, Chu J. Lattice vibration characteristics in layered InSe films and the electronic behavior of field-effect transistors. NANOTECHNOLOGY 2020; 31:335702. [PMID: 32344392 DOI: 10.1088/1361-6528/ab8df1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Understanding how temperature affects the structural and electronic properties for two-dimensional (2D) semiconductors could promote the application and development of nanoelectronic devices. Here, the temperature dependence of lattice structure for indium selenide (InSe) nanosheets and the corresponding electronic properties of 3 nm indium-deposited InSe field-effect transistors (FETs) are systematically demonstrated. Analyses of Raman spectra suggest that the difference of phonon frequency (Δω) for the A[Formula: see text] mode is found to be 3.14 cm-1, which is larger than that of the E[Formula: see text] mode due to the stronger electron-phonon coupling for the A[Formula: see text] mode. The device performance based on indium-deposited InSe is systematically explained using Kelvin probe force microscopy (KPFM) and the predicted energy band structure. Furthermore, FETs based on temperature and variable thickness InSe flakes are designed as applicable devices. Our findings are of fundamental importance to explain the underlying physics in intrinsic InSe transistors and improve further applications.
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Affiliation(s)
- Fangfang Chen
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
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11
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Luo P, Zhuge F, Zhang Q, Chen Y, Lv L, Huang Y, Li H, Zhai T. Doping engineering and functionalization of two-dimensional metal chalcogenides. NANOSCALE HORIZONS 2019; 4:26-51. [PMID: 32254144 DOI: 10.1039/c8nh00150b] [Citation(s) in RCA: 106] [Impact Index Per Article: 21.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the-art technology. To pursue ultimate performance, precisely controlled doping engineering of 2D MXs is desired for tailoring their physical and chemical properties in functional devices. In this review, we highlight the recent progress in the doping engineering of 2D MXs, covering that enabled by substitution, exterior charge transfer, intercalation and the electrostatic doping mechanism. A variety of novel doping engineering examples leading to Janus structures, defect curing effects, zero-valent intercalation and deliberately devised floating gate modulation will be discussed together with their intriguing application prospects. The choice of doping strategies and sources for functionalizing MXs will be provided to facilitate ongoing research in this field toward multifunctional applications.
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Affiliation(s)
- Peng Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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Wells SA, Henning A, Gish JT, Sangwan VK, Lauhon LJ, Hersam MC. Suppressing Ambient Degradation of Exfoliated InSe Nanosheet Devices via Seeded Atomic Layer Deposition Encapsulation. NANO LETTERS 2018; 18:7876-7882. [PMID: 30418785 DOI: 10.1021/acs.nanolett.8b03689] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
With exceptional charge carrier mobilities and a direct bandgap at most thicknesses, indium selenide (InSe) is an emerging layered semiconductor that has generated significant interest for electronic and optoelectronic applications. However, exfoliated InSe nanosheets are susceptible to rapid degradation in ambient conditions, thus limiting their technological potential. In addition to morphological changes upon ambient exposure, the mobilities and current modulation on/off ratios of InSe transistors, as well as the responsivities of InSe photodetectors, decrease by over 3 orders of magnitude within 12 h of ambient exposure. In an effort to mitigate these deleterious effects, here we present an encapsulation scheme based on seeded atomic layer deposition that provides pinhole-free growth of alumina without compromising the intrinsic electronic properties of the underlying InSe. In particular, this encapsulation provides reproducible InSe field-effect transistor characteristics and InSe photodetector responsivities in excess of 107 A/W following ambient exposure for time periods on the order of months. Because atomic layer deposition is a highly scalable and manufacturable process, this work will accelerate ongoing efforts to integrate InSe nanosheets into electronic and optoelectronic technologies.
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Affiliation(s)
- Spencer A Wells
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Alex Henning
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - J Tyler Gish
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Vinod K Sangwan
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Mark C Hersam
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
- Department of Chemistry , Northwestern University , Evanston , Illinois 60208 , United States
- Department of Electrical Engineering and Computer Science , Northwestern University , Evanston , Illinois 60208 , United States
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Fan Y, Liu X, Wang J, Ai H, Zhao M. Silicene and germanene on InSe substrates: structures and tunable electronic properties. Phys Chem Chem Phys 2018; 20:11369-11377. [DOI: 10.1039/c8cp00610e] [Citation(s) in RCA: 32] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/31/2023]
Abstract
The tunable electronic properties of Si/InSe and Ge/InSe HLs by applying an external electric field or strain.
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Affiliation(s)
- Yingcai Fan
- Department of Assets Management
- School of Information and Electronic Engineering
- Shandong Technology and Business University
- Yantai 264005
- China
| | - Xiaobiao Liu
- School of Physics and State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Junru Wang
- School of Physics and State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Haoqiang Ai
- School of Physics and State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Mingwen Zhao
- School of Physics and State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
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Shi B, Wang Y, Li J, Zhang X, Yan J, Liu S, Yang J, Pan Y, Zhang H, Yang J, Pan F, Lu J. n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors. Phys Chem Chem Phys 2018; 20:24641-24651. [DOI: 10.1039/c8cp04615h] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We explore the contact properties of monolayer InSe transistors and obtain n-type Ohmic/p-type Schottky contacts.
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Politano A, Chiarello G, Samnakay R, Liu G, Gürbulak B, Duman S, Balandin AA, Boukhvalov DW. The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices. NANOSCALE 2016; 8:8474-8479. [PMID: 27049751 DOI: 10.1039/c6nr01262k] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We demonstrate that, in contrast to most two-dimensional materials, ultrathin flakes of InSe are stable under ambient conditions. Despite their ambient stability, InSe-based nanodevices show an environmental p-type doping, suppressed by capping InSe with hexagonal boron nitride. By means of transport experiments, density functional theory and vibrational spectroscopy, we attribute the p-type doping assumed by uncapped InSe under an ambient atmosphere to the decomposition of water at Se vacancies. We have estimated the site-dependent adsorption energy of O2, N2, H2O, CO and CO2 on InSe. A stable adsorption is found only for the case of H2O, with a charge transfer of only 0.01 electrons per water molecule.
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Affiliation(s)
- A Politano
- Università degli Studi della Calabria, Dipartimento di Fisica, 87036 Rende, Italy.
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