1
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Mahmoudi A, Bouaziz M, Chapuis N, Kremer G, Chaste J, Romanin D, Pala M, Bertran F, Fèvre PL, Gerber IC, Patriarche G, Oehler F, Wallart X, Ouerghi A. Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe 2 on GaP(111) Heterostructure. ACS NANO 2023; 17:21307-21316. [PMID: 37856436 DOI: 10.1021/acsnano.3c05818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2023]
Abstract
The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here, we demonstrate that a rhombohedral-stacked bilayer (AB stacking) can be obtained by molecular beam epitaxy growth of tungsten diselenide (WSe2) on a gallium phosphide (GaP) substrate. We confirm the presence of 3R-stacking of the WSe2 bilayer structure using scanning transmission electron microscopy (STEM) and micro-Raman spectroscopy. Also, we report high-resolution angle-resolved photoemission spectroscopy (ARPES) on our rhombohedral-stacked WSe2 bilayer grown on a GaP(111)B substrate. Our ARPES measurements confirm the expected valence band structure of WSe2 with the band maximum located at the Γ point of the Brillouin zone. The epitaxial growth of WSe2/GaP(111)B helps to understand the fundamental properties of these 2D/3D heterostructures, toward their implementation in future devices.
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Affiliation(s)
- Aymen Mahmoudi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Meryem Bouaziz
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Niels Chapuis
- Univ. Lille, CNRS, Centrale Lille, JUNIA ISEN, Univ. Polytechnique Hauts de France, UMR 8520-IEMN F59000 Lille, France
| | - Geoffroy Kremer
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Julien Chaste
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Davide Romanin
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Marco Pala
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - François Bertran
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Patrick Le Fèvre
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Iann C Gerber
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077 Toulouse, France
| | - Gilles Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Fabrice Oehler
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Xavier Wallart
- Univ. Lille, CNRS, Centrale Lille, JUNIA ISEN, Univ. Polytechnique Hauts de France, UMR 8520-IEMN F59000 Lille, France
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
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2
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Koussir H, Chernukha Y, Sthioul C, Haber E, Peric N, Biadala L, Capiod P, Berthe M, Lefebvre I, Wallart X, Grandidier B, Diener P. Large-Area Epitaxial Mott Insulating 1T-TaSe 2 Monolayer on GaP(111)B. NANO LETTERS 2023; 23:9413-9419. [PMID: 37820373 DOI: 10.1021/acs.nanolett.3c02813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Two-dimensional Mott materials have recently been reported in the dichalcogenide family with high potential for Mottronic applications. Nevertheless, their widespread use as a single or few layers is hampered by their limited device integration resulting from their growth on graphene, a metallic substrate. Here, we report on the fabrication of 1T-TaSe2 monolayers grown by molecular beam epitaxy on semiconducting gallium phosphide substrates. At the nanoscale, the charge density wave reconstruction and a moiré pattern resulting from the monolayer interaction with the substrate are observed by scanning tunneling microscopy. The fully open gap unveiled by tunneling spectroscopy, which can be further manipulated by the proximity of a metal tip, is confirmed by transport measurements from micrometric to millimetric scales, demonstrating a robust Mott insulating phase at up to 400 K.
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Affiliation(s)
- H Koussir
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - Y Chernukha
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - C Sthioul
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - E Haber
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - N Peric
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - L Biadala
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - P Capiod
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - M Berthe
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - I Lefebvre
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - X Wallart
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - B Grandidier
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - P Diener
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
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3
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Babar ZUD, Raza A, Cassinese A, Iannotti V. Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective. Molecules 2023; 28:molecules28052275. [PMID: 36903520 PMCID: PMC10005545 DOI: 10.3390/molecules28052275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 02/05/2023] [Accepted: 02/16/2023] [Indexed: 03/05/2023] Open
Abstract
Researchers have found various families of two-dimensional (2D) materials and associated heterostructures through detailed theoretical work and experimental efforts. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from micro to nano and pico scale. Two-dimensional van der Waals (vdW) materials and their heterostructures can be obtained to enable high-frequency broadband through a sophisticated combination of stacking order, orientation, and interlayer interactions. These heterostructures have been the focus of much recent research due to their potential applications in optoelectronics. Growing the layers of one kind of 2D material over the other, controlling absorption spectra via external bias, and external doping proposes an additional degree of freedom to modulate the properties of such materials. This mini review focuses on current state-of-the-art material design, manufacturing techniques, and strategies to design novel heterostructures. In addition to a discussion of fabrication techniques, it includes a comprehensive analysis of the electrical and optical properties of vdW heterostructures (vdWHs), particularly emphasizing the energy-band alignment. In the following sections, we discuss specific optoelectronic devices, such as light-emitting diodes (LEDs), photovoltaics, acoustic cavities, and biomedical photodetectors. Furthermore, this also includes a discussion of four different 2D-based photodetector configurations according to their stacking order. Moreover, we discuss the challenges that remain to be addressed in order to realize the full potential of these materials for optoelectronics applications. Finally, as future perspectives, we present some key directions and express our subjective assessment of upcoming trends in the field.
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Affiliation(s)
- Zaheer Ud Din Babar
- Scuola Superiore Meridionale (SSM), University of Naples Federico II, Largo S. Marcellino 10, 80138 Naples, Italy
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
| | - Ali Raza
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
| | - Antonio Cassinese
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
- CNR–SPIN (Institute for Superconductors, Oxides and Other Innovative Materials and Devices), Piazzale V. Tecchio 80, 80125 Naples, Italy
| | - Vincenzo Iannotti
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
- CNR–SPIN (Institute for Superconductors, Oxides and Other Innovative Materials and Devices), Piazzale V. Tecchio 80, 80125 Naples, Italy
- Correspondence:
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4
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Iordanidou K, Mitra R, Shetty N, Lara-Avila S, Dash S, Kubatkin S, Wiktor J. Electric Field and Strain Tuning of 2D Semiconductor van der Waals Heterostructures for Tunnel Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1762-1771. [PMID: 36537996 PMCID: PMC9837817 DOI: 10.1021/acsami.2c13151] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Accepted: 11/21/2022] [Indexed: 06/17/2023]
Abstract
Heterostacks consisting of low-dimensional materials are attractive candidates for future electronic nanodevices in the post-silicon era. In this paper, using first-principles calculations based on density functional theory (DFT), we explore the structural and electronic properties of MoTe2/ZrS2 heterostructures with various stacking patterns and thicknesses. Our simulations show that the valence band (VB) edge of MoTe2 is almost aligned with the conduction band (CB) edge of ZrS2, and (MoTe2)m/(ZrS2)m (m = 1, 2) heterostructures exhibit the long-sought broken gap band alignment, which is pivotal for realizing tunneling transistors. Electrons are found to spontaneously flow from MoTe2 to ZrS2, and the system resembles an ultrascaled parallel plate capacitor with an intrinsic electric field pointed from MoTe2 to ZrS2. The effects of strain and external electric fields on the electronic properties are also investigated. For vertical compressive strains, the charge transfer increases due to the decreased coupling between the layers, whereas tensile strains lead to the opposite behavior. For negative electric fields a transition from the type-III to the type-II band alignment is induced. In contrast, by increasing the positive electric fields, a larger overlap between the valence and conduction bands is observed, leading to a larger band-to-band tunneling (BTBT) current. Low-strained heterostructures with various rotation angles between the constituent layers are also considered. We find only small variations in the energies of the VB and CB edges with respect to the Fermi level, for different rotation angles up to 30°. Overall, our simulations offer insights into the fundamental properties of low-dimensional heterostructures and pave the way for their future application in energy-efficient electronic nanodevices.
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Affiliation(s)
| | - Richa Mitra
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Naveen Shetty
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Samuel Lara-Avila
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Saroj Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Sergey Kubatkin
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Julia Wiktor
- Department
of Physics, Chalmers University of Technology, SE-412 96Gothenburg, Sweden
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5
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Wolverson D, Smith B, Da Como E, Sayers C, Wan G, Pasquali L, Cattelan M. First-Principles Estimation of Core Level Shifts for Hf, Ta, W, and Re. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2022; 126:9135-9142. [PMID: 35686223 PMCID: PMC9169058 DOI: 10.1021/acs.jpcc.2c00981] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2022] [Revised: 04/28/2022] [Indexed: 05/14/2023]
Abstract
A simple first-principles approach is used to estimate the core level shifts observed in X-ray photoelectron spectroscopy for the 4f electrons of Hf, Ta, W, and Re; these elements were selected because their 4f levels are relatively close to the Fermi energy. The approach is first tested by modeling the surface core level shifts of low-index surfaces of the four elemental metals, followed by its application to the well-studied material TaSe2 in the commensurate charge density wave (CDW) phase, where agreement with experimental data is found to be good, showing that this approach can yield insights into modifications of the CDW. Finally, unterminated surface core level shifts in the hypothetical MXene Ta3C2 are modeled, and the potential of XPS for the investigation of the surface termination of MXenes is demonstrated.
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Affiliation(s)
- Daniel Wolverson
- Centre
for Nanoscience and Nanotechnology and Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Benjamin Smith
- Centre
for Nanoscience and Nanotechnology and Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Enrico Da Como
- Centre
for Nanoscience and Nanotechnology and Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Charles Sayers
- Centre
for Nanoscience and Nanotechnology and Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Gary Wan
- Centre
for Nano Science and Quantum Information, University of Bristol, Tyndall Avenue, Bristol BS8 1FD, United Kingdom
| | - Luca Pasquali
- Department
of Engineering, University of Modena and
Reggio Emilia, Via Vivarelli
10, Modena 41125, Italy
| | - Mattia Cattelan
- School
of Chemistry, University of Bristol, Cantocks Close, Bristol BS8 1TS, United
Kingdom
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6
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Ge Y, Wang F, Yang Y, Xu Y, Ye Y, Cai Y, Zhang Q, Cai S, Jiang D, Liu X, Liedberg B, Mao J, Wang Y. Atomically Thin TaSe 2 Film as a High-Performance Substrate for Surface-Enhanced Raman Scattering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107027. [PMID: 35246940 DOI: 10.1002/smll.202107027] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2021] [Revised: 02/08/2022] [Indexed: 06/14/2023]
Abstract
An atomically thin TaSe2 sample, approximately containing two to three layers of TaSe2 nanosheets with a diameter of 2.5 cm is prepared here for the first time and applied on the detection of various Raman-active molecules. It achieves a limit of detection of 10-10 m for rhodamine 6G molecules. The excellent surface-enhanced Raman scattering (SERS) performance and underlying mechanism of TaSe2 are revealed using spectrum analysis and density functional theory. The large adsorption energy and the abundance of filled electrons close to the Fermi level are found to play important roles in the chemical enhancement mechanism. Moreover, the TaSe2 film enables highly sensitive detection of bilirubin in serum and urine samples, highlighting the potential of using 2D SERS substrates for applications in clinical diagnosis, for example, in the diagnosis of jaundice caused by excess bilirubin in newborn children.
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Affiliation(s)
- Yuancai Ge
- School of Biomedical Engineering, School of Ophthalmology and Optometry, Wenzhou Medical University, Xueyuan Road 270, Wenzhou, 325027, China
| | - Fei Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China
| | - Ying Yang
- School of Biomedical Engineering, School of Ophthalmology and Optometry, Wenzhou Medical University, Xueyuan Road 270, Wenzhou, 325027, China
| | - Yi Xu
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Ying Ye
- School of Biomedical Engineering, School of Ophthalmology and Optometry, Wenzhou Medical University, Xueyuan Road 270, Wenzhou, 325027, China
| | - Yu Cai
- School of Biomedical Engineering, School of Ophthalmology and Optometry, Wenzhou Medical University, Xueyuan Road 270, Wenzhou, 325027, China
| | - Qingwen Zhang
- Wenzhou Institute, University of Chinese Academy of Sciences, Xinsan Road 16, Wenzhou, 325001, China
| | - Shengying Cai
- Wenzhou Institute, University of Chinese Academy of Sciences, Xinsan Road 16, Wenzhou, 325001, China
| | - DanFeng Jiang
- Wenzhou Institute, University of Chinese Academy of Sciences, Xinsan Road 16, Wenzhou, 325001, China
| | - Xiaohu Liu
- School of Biomedical Engineering, School of Ophthalmology and Optometry, Wenzhou Medical University, Xueyuan Road 270, Wenzhou, 325027, China
| | - Bo Liedberg
- Centre for Biomimetic Sensor Science, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Jian Mao
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China
| | - Yi Wang
- School of Biomedical Engineering, School of Ophthalmology and Optometry, Wenzhou Medical University, Xueyuan Road 270, Wenzhou, 325027, China
- Wenzhou Institute, University of Chinese Academy of Sciences, Xinsan Road 16, Wenzhou, 325001, China
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7
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Kumar A, Swami SK, Sharma R, Yadav S, Singh VN, Schneider JJ, Sinha OP, Srivastava R. A study on structural, optical, and electrical characteristics of perovskite CsPbBr 3 QD/2D-TiSe 2 nanosheet based nanocomposites for optoelectronic applications. Dalton Trans 2022; 51:4104-4112. [PMID: 35179542 DOI: 10.1039/d1dt03423e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Lead halide perovskite (CsPbBr3) quantum dots (QDs) and two-dimensional (2D) layered transition metal dichalcogenides have a significant application in solution-processed optoelectronic devices. Here, we report the oleylamine-assisted exfoliation of TiSe2 nanosheets (NSs) in dichlorobenzene with high concentration and stable dispersion. The functionalized TiSe2 NSs were used to synthesize the solution-processed perovskite CsPbBr3 QD/TiSe2 NS-based nanocomposite. The perovskite QDs and TiSe2 NSs were characterized by different techniques. The strong photoluminescence (PL) quenching and decreased lifetime decay of the nanocomposite indicates efficient charge transfer from photo-excited CsPbBr3 to TiSe2 NSs. The calculated charge-transfer rate constant (KET) from photo-excited CsPbBr3 to TiSe2 NSs increased from 1.50 × 108 to 2.79 × 108 s-1 in different concentrations of TiSe2 NSs (5 to 20 μg mL-1), respectively. Furthermore, the photo-currents of CsPbBr3 QD/TiSe2 NS nanocomposite devices were dramatically enhanced ∼2 times compared to pristine CsPbBr3 QD based devices, which supports the charge transfer and charge separation in nanocomposite devices.
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Affiliation(s)
- Ashish Kumar
- CSIR-National Physical Laboratory, Dr KS Krishnan Marg, New Delhi-110012, India. .,Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
| | - Sanjay Kumar Swami
- CSIR-National Physical Laboratory, Dr KS Krishnan Marg, New Delhi-110012, India.
| | - Rohit Sharma
- Amity Institute of Nanotechnology, Amity University UP, Noida, UP, India.
| | - Sandeep Yadav
- Technische Universität Darmstadt, Eduard-Zintl-Institut für Anorganische and Physikalische Chemie, Alarich-Weiss-Str.12, D-64287 Darmstadt, Germany
| | - V N Singh
- CSIR-National Physical Laboratory, Dr KS Krishnan Marg, New Delhi-110012, India. .,Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
| | - Joerg J Schneider
- Technische Universität Darmstadt, Eduard-Zintl-Institut für Anorganische and Physikalische Chemie, Alarich-Weiss-Str.12, D-64287 Darmstadt, Germany
| | - O P Sinha
- Amity Institute of Nanotechnology, Amity University UP, Noida, UP, India.
| | - Ritu Srivastava
- CSIR-National Physical Laboratory, Dr KS Krishnan Marg, New Delhi-110012, India. .,Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
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8
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Dandu M, Gupta G, Majumdar K. Negative Differential Photoconductance as a Signature of Nonradiative Energy Transfer in van der Waals Heterojunction. ACS NANO 2021; 15:16432-16441. [PMID: 34644047 DOI: 10.1021/acsnano.1c05844] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The physical proximity of layered materials in their van der Waals heterostructures (vdWhs) aids interfacial phenomena such as charge transfer (CT) and energy transfer (ET). Besides providing fundamental insights, CT and ET also offer routes to engineer optoelectronic properties of vdWhs. For example, harnessing ET in vdWhs can help to overcome the limitations of optical absorption imposed by the ultra-thin nature of layered materials and thus provide an opportunity for in situ enhancement of quantum efficiency for light-harvesting and sensing applications. While several spectroscopic studies on vdWhs probed the dynamics of CT and ET, the possible contribution of ET in the photocurrent generation remains largely unexplored. In this work, we investigate the role of nonradiative energy transfer (NRET) in the photocurrent through a vertical vdWh of SnSe2/MoS2/TaSe2. We observe an unusual negative differential photoconductance (NDPC) arising from the existence of NRET across the SnSe2/MoS2 junction. Modulation of the NRET-driven NDPC characteristics with optical power results in a striking transition of the photocurrent's power law from a sublinear to a superlinear regime. Our observations reveal the nontrivial influence of ET on the photoresponse of vdWhs, which offer insights to harness ET in synergy with CT for vdWh based next-generation optoelectronics.
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Affiliation(s)
- Medha Dandu
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Garima Gupta
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
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9
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Gbadamasi S, Mohiuddin M, Krishnamurthi V, Verma R, Khan MW, Pathak S, Kalantar-Zadeh K, Mahmood N. Interface chemistry of two-dimensional heterostructures - fundamentals to applications. Chem Soc Rev 2021; 50:4684-4729. [PMID: 33621294 DOI: 10.1039/d0cs01070g] [Citation(s) in RCA: 50] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Two-dimensional heterostructures (2D HSs) have emerged as a new class of materials where dissimilar 2D materials are combined to synergise their advantages and alleviate shortcomings. Such a combination of dissimilar components into 2D HSs offers fascinating properties and intriguing functionalities attributed to the newly formed heterointerface of constituent components. Understanding the nature of the surface and the complex heterointerface of HSs at the atomic level is crucial for realising the desired properties, designing innovative 2D HSs, and ultimately unlocking their full potential for practical applications. Therefore, this review provides the recent progress in the field of 2D HSs with a focus on the discussion of the fundamentals and the chemistry of heterointerfaces based on van der Waals (vdW) and covalent interactions. It also explains the challenges associated with the scalable synthesis and introduces possible methodologies to produce large quantities with good control over the heterointerface. Subsequently, it highlights the specialised characterisation techniques to reveal the heterointerface formation, chemistry and nature. Afterwards, we give an overview of the role of 2D HSs in various emerging applications, particularly in high-power batteries, bifunctional catalysts, electronics, and sensors. In the end, we present conclusions with the possible solutions to the associated challenges with the heterointerfaces and potential opportunities that can be adopted for innovative applications.
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10
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Yang L, Zhao R, Wu D, Xu T, Liu X, Nie Q, Dai S. Metallic 2H-Tantalum Selenide Nanomaterials as Saturable Absorber for Dual-Wavelength Q-Switched Fiber Laser. SENSORS (BASEL, SWITZERLAND) 2021; 21:E239. [PMID: 33401483 PMCID: PMC7796050 DOI: 10.3390/s21010239] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/11/2020] [Revised: 12/28/2020] [Accepted: 12/28/2020] [Indexed: 01/22/2023]
Abstract
A novel 2H-phase transition metal dichalcogenide (TMD)-tantalum selenide (TaSe2) with metallic bandgap structure is a potential photoelectric material. A band structure simulation of TaSe2 via ab initio method indicated its metallic property. An effective multilayered TaSe2 saturable absorber (SA) was fabricated using liquid-phase exfoliation and optically driven deposition. The prepared 2H-TaSe2 SA was successfully used for a dual-wavelength Q-switched fiber laser with the minimum pulse width of 2.95 μs and the maximum peak power of 64 W. The repetition rate of the maximum pulse energy of 89.9 kHz was at the level of 188.9 nJ. The metallic 2H-TaSe2 with satisfactory saturable absorbing capability is a promising candidate for pulsed laser applications.
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Affiliation(s)
- Lingling Yang
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China; (L.Y.); (R.Z.); (D.W.); (Q.N.); (S.D.)
| | - Ruwei Zhao
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China; (L.Y.); (R.Z.); (D.W.); (Q.N.); (S.D.)
| | - Duanduan Wu
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China; (L.Y.); (R.Z.); (D.W.); (Q.N.); (S.D.)
| | - Tianxiang Xu
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China; (L.Y.); (R.Z.); (D.W.); (Q.N.); (S.D.)
| | - Xiaobiao Liu
- School of Sciences, Henan Agricultural University, Zhengzhou 450002, China
| | - Qiuhua Nie
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China; (L.Y.); (R.Z.); (D.W.); (Q.N.); (S.D.)
| | - Shixun Dai
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China; (L.Y.); (R.Z.); (D.W.); (Q.N.); (S.D.)
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11
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Measuring the Electron–Phonon Interaction in Two-Dimensional Superconductors with He-Atom Scattering. CONDENSED MATTER 2020. [DOI: 10.3390/condmat5040079] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Helium-atom scattering (HAS) spectroscopy from conducting surfaces has been shown to provide direct information on the electron–phonon interaction, more specifically the mass-enhancement factor λ from the temperature dependence of the Debye–Waller exponent, and the mode-selected electron–phonon coupling constants λQν from the inelastic HAS intensities from individual surface phonons. The recent applications of the method to superconducting ultra-thin films, quasi-1D high-index surfaces, and layered transition-metal and topological pnictogen chalcogenides are briefly reviewed.
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12
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Prabhu M, Boden D, Rost MJ, Meyer J, Groot IMN. Structural Characterization of a Novel Two-Dimensional Material: Cobalt Sulfide Sheets on Au(111). J Phys Chem Lett 2020; 11:9038-9044. [PMID: 32986432 PMCID: PMC7649848 DOI: 10.1021/acs.jpclett.0c02268] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/24/2020] [Accepted: 09/28/2020] [Indexed: 06/11/2023]
Abstract
Transition metal dichalcogenides (TMDCs) are a type of two-dimensional (2D) material that has been widely investigated by both experimentalists and theoreticians because of their unique properties. In the case of cobalt sulfide, density functional theory (DFT) calculations on free-standing S-Co-S sheets suggest there are no stable 2D cobalt sulfide polymorphs, whereas experimental observations clearly show TMDC-like structures on Au(111). In this study, we resolve this disagreement by using a combination of experimental techniques and DFT calculations, considering the substrate explicitly. We find a 2D CoS(0001)-like sheet on Au(111) that delivers excellent agreement between theory and experiment. Uniquely this sheet exhibits a metallic character, contrary to most TMDCs, and exists due to the stabilizing interactions with the Au(111) substrate.
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Affiliation(s)
- Mahesh
K. Prabhu
- Leiden
Institute of Chemistry, Leiden University, P.O. Box 9502, 2300 RA Leiden, The Netherlands
| | - Dajo Boden
- Leiden
Institute of Chemistry, Leiden University, P.O. Box 9502, 2300 RA Leiden, The Netherlands
| | - Marcel J. Rost
- Huygens-Kamerlingh
Onnes Laboratory, Leiden Institute of Physics, Leiden University, P.O. Box 9504, 2300 RA Leiden, The Netherlands
| | - Jörg Meyer
- Leiden
Institute of Chemistry, Leiden University, P.O. Box 9502, 2300 RA Leiden, The Netherlands
| | - Irene M. N. Groot
- Leiden
Institute of Chemistry, Leiden University, P.O. Box 9502, 2300 RA Leiden, The Netherlands
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13
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Choi BK, Ulstrup S, Gunasekera SM, Kim J, Lim SY, Moreschini L, Oh JS, Chun SH, Jozwiak C, Bostwick A, Rotenberg E, Cheong H, Lyo IW, Mucha-Kruczynski M, Chang YJ. Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe 2. ACS NANO 2020; 14:7880-7891. [PMID: 32463224 DOI: 10.1021/acsnano.0c01054] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition-metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemission spectroscopy to study the electronic band structure of monolayer ReSe2, a semiconductor with a distorted 1T structure and in-plane anisotropy. By changing the polarization of incoming photons, we demonstrate that for ReSe2, in contrast to the 2H materials, the out-of-plane transition metal dz2 and chalcogen pz orbitals do not contribute significantly to the top of the valence band, which explains the reported weak changes in the electronic structure of this compound as a function of layer number. We estimate a band gap of 1.7 eV in pristine ReSe2 using scanning tunneling spectroscopy and explore the implications on the gap following surface doping with potassium. A lower bound of 1.4 eV is estimated for the gap in the fully doped case, suggesting that doping-dependent many-body effects significantly affect the electronic properties of ReSe2. Our results, supported by density functional theory calculations, provide insight into the mechanisms behind polarization-dependent optical properties of rhenium dichalcogenides and highlight their place among two-dimensional crystals.
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Affiliation(s)
- Byoung Ki Choi
- Department of Physics, University of Seoul, Seoul 02504, Republic of Korea
| | - Søren Ulstrup
- Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Surani M Gunasekera
- Centre for Nanoscience and Nanotechnology and Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Jiho Kim
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Soo Yeon Lim
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Luca Moreschini
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Ji Seop Oh
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Seung-Hyun Chun
- Department of Physics, Sejong University, Seoul 05006, Republic of Korea
| | - Chris Jozwiak
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Aaron Bostwick
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Eli Rotenberg
- Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - In-Whan Lyo
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Marcin Mucha-Kruczynski
- Centre for Nanoscience and Nanotechnology and Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Young Jun Chang
- Department of Physics, University of Seoul, Seoul 02504, Republic of Korea
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14
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Mortelmans W, Nalin Mehta A, Balaji Y, Sergeant S, Meng R, Houssa M, De Gendt S, Heyns M, Merckling C. On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides. ACS APPLIED MATERIALS & INTERFACES 2020; 12:27508-27517. [PMID: 32447952 DOI: 10.1021/acsami.0c05872] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Layered materials held together by weak van der Waals (vdW) interactions are a promising class of materials in the field of nanotechnology. Besides the potential for single layers, stacking of various vdW layers becomes even more promising since unique properties can hence be precisely engineered. The synthesis of stacked vdW layers, however, remains to date, hardly understood. Therefore, in this work, the vdW epitaxy of transition metal dichalcogenides (TMDs) on single-crystalline TMD templates is investigated in depth. It is demonstrated that the role of lattice mismatch is insignificant. More importantly is the role of surface energy, calculated using density functional theory, which plays an essential role in the activation energy for adatom diffusion, hence nucleation density. This in turn correlates with defect density since the stacking sequence in vdW epitaxy is generally poorly controlled. Moreover, the vapor pressure of the transition metal is also found to correlate with adatom diffusion. Consequently, the proposed study enables important and new insight in the vdW epitaxy of multilayer 2D homo-/heterostructures.
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Affiliation(s)
- Wouter Mortelmans
- Department of Materials Engineering, KU Leuven, Kasteelpark Arenberg 44, 3001 Leuven, Belgium
- Imec, Kapeldreef 75, 3001 Leuven, Belgium
| | - Ankit Nalin Mehta
- Imec, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200d, 3001 Leuven, Belgium
| | - Yashwanth Balaji
- Imec, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
| | | | - Ruishen Meng
- Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200d, 3001 Leuven, Belgium
| | - Michel Houssa
- Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200d, 3001 Leuven, Belgium
| | - Stefan De Gendt
- Imec, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Chemistry, KU Leuven, Celestijnenlaan 200f, 3001 Leuven, Belgium
| | - Marc Heyns
- Department of Materials Engineering, KU Leuven, Kasteelpark Arenberg 44, 3001 Leuven, Belgium
- Imec, Kapeldreef 75, 3001 Leuven, Belgium
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15
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Benedek G, Manson JR, Miret-Artés S. The Electron-Phonon Interaction of Low-Dimensional and Multi-Dimensional Materials from He Atom Scattering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002072. [PMID: 32412161 DOI: 10.1002/adma.202002072] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2020] [Revised: 04/14/2020] [Accepted: 04/22/2020] [Indexed: 06/11/2023]
Abstract
Atom scattering is becoming recognized as a sensitive probe of the electron-phonon interaction parameter λ at metal and metal-overlayer surfaces. Here, the theory is developed, linking λ to the thermal attenuation of atom scattering spectra (in particular, the Debye-Waller factor), to conducting materials of different dimensions, from quasi-1D systems such as W(110):H(1 × 1) and Bi(114), to quasi-2D layered chalcogenides, and high-dimensional surfaces such as quasicrystalline 2ML-Ba(0001)/Cu(001) and d-AlNiCo(00001). Values of λ obtained using He atoms compare favorably with known values for the bulk materials. The corresponding analysis indicates in addition, the number of layers contributing to the electron-phonon interaction, which is measured in an atom surface collision.
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Affiliation(s)
- Giorgio Benedek
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizabal, 4, Donostia-San Sebastian, 20018, Spain
- Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via Cozzi 55, Milano, 20125, Italy
| | - Joseph R Manson
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizabal, 4, Donostia-San Sebastian, 20018, Spain
- Department of Physics and Astronomy, Clemson University, Clemson, SC, 29634, USA
| | - Salvador Miret-Artés
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizabal, 4, Donostia-San Sebastian, 20018, Spain
- Instituto de Física Fundamental, Consejo Superior de Investigaciones Científicas, Serrano 123, Madrid, 28006, Spain
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16
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Hassan MS, Basera P, Bera S, Mittal M, Ray SK, Bhattacharya S, Sapra S. Enhanced Photocurrent Owing to Shuttling of Charge Carriers across 4-Aminothiophenol-Functionalized MoSe 2-CsPbBr 3 Nanohybrids. ACS APPLIED MATERIALS & INTERFACES 2020; 12:7317-7325. [PMID: 31933353 DOI: 10.1021/acsami.9b20050] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Mixed-dimensional van der Waals nanohybrids (MvNHs) of two-dimensional transition-metal dichalcogenides (TMDs) and zero-dimensional perovskites are highly promising candidates for high-performance photonic device applications. However, the growth of perovskites over the surface of TMDs has been a challenging task due to the distinguishable surface chemistry of these two different classes of materials. Here, we demonstrate a synthetic route for the design of MoSe2-CsPbBr3 MvNHs using a bifunctional ligand, i.e., 4-aminothiophenol. Close contact between these two materials is established via a bridge that leads to the formation of a donor-bridge-acceptor system. The presence of the small conjugated ligand facilitates faster charge diffusion across MoSe2-CsPbBr3 interfaces. Density functional theory calculations confirm the type-II band alignment of the constituents within the MvNHs. The MoSe2-CsPbBr3 nanohybrids show much higher photocurrent (∼2 × 104-fold photo-to-dark current ratio) as compared to both pure CsPbBr3 nanocrystals and pristine MoSe2 nanosheets owing to the synergistic effect of pronounced light-matter interactions followed by efficient charge separation and transportation. This study suggests the use of a bifunctional ligand to construct a nanohybrid system to tune the optoelectronic properties for potential applications in photovoltaic devices.
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Affiliation(s)
- Md Samim Hassan
- Department of Chemistry , Indian Institute of Technology Delhi , Hauz Khas , New Delhi 110016 , India
| | - Pooja Basera
- Department of Physics , Indian Institute of Technology Delhi , Hauz Khas , New Delhi 110016 , India
| | - Susnata Bera
- Department of Chemistry , Indian Institute of Technology Delhi , Hauz Khas , New Delhi 110016 , India
| | - Mona Mittal
- Department of Chemistry , Indian Institute of Technology Delhi , Hauz Khas , New Delhi 110016 , India
| | - Samit Kumar Ray
- Department of Physics , Indian Institute of Technology Kharagpur , Kharagpur 721302 , West Bengal , India
- S. N. Bose National Centre for Basic Sciences , Kolkata 700106 , India
| | - Saswata Bhattacharya
- Department of Physics , Indian Institute of Technology Delhi , Hauz Khas , New Delhi 110016 , India
| | - Sameer Sapra
- Department of Chemistry , Indian Institute of Technology Delhi , Hauz Khas , New Delhi 110016 , India
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17
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Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations. Nat Commun 2019; 10:5528. [PMID: 31797928 PMCID: PMC6893034 DOI: 10.1038/s41467-019-13488-5] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2019] [Accepted: 11/07/2019] [Indexed: 11/29/2022] Open
Abstract
Vertical van der Waals (vdW) heterostructures of 2D crystals with defined interlayer twist are of interest for band-structure engineering via twist moiré superlattice potentials. To date, twist-heterostructures have been realized by micromechanical stacking. Direct synthesis is hindered by the tendency toward equilibrium stacking without interlayer twist. Here, we demonstrate that growing a 2D crystal with fixed azimuthal alignment to the substrate followed by transformation of this intermediate enables a potentially scalable synthesis of twisted heterostructures. Microscopy during growth of ultrathin orthorhombic SnS on trigonal SnS2 shows that vdW epitaxy yields azimuthal order even for non-isotypic 2D crystals. Excess sulfur drives a spontaneous transformation of the few-layer SnS to SnS2, whose orientation – rotated 30° against the underlying SnS2 crystal – is defined by the SnS intermediate rather than the substrate. Preferential nucleation of additional SnS on such twisted domains repeats the process, promising the realization of complex twisted stacks by bottom-up synthesis. Vertically stacked twisted layers of two-dimensional materials can trigger exciting fundamental physics. Here, authors report controlled growth of 30° twisted few-layer SnS2 over SnS2 via van der Waals epitaxy of an SnS intermediate and its transformation in the presence of excess sulfur.
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18
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Tsai HS, Liu FW, Liou JW, Chi CC, Tang SY, Wang C, Ouyang H, Chueh YL, Liu C, Zhou S, Woon WY. Direct Synthesis of Large-Scale Multilayer TaSe 2 on SiO 2/Si Using Ion Beam Technology. ACS OMEGA 2019; 4:17536-17541. [PMID: 31656926 PMCID: PMC6812130 DOI: 10.1021/acsomega.9b02441] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2019] [Accepted: 09/24/2019] [Indexed: 05/28/2023]
Abstract
The multilayer 1T-TaSe2 is successfully synthesized by annealing a Se-implanted Ta thin film on the SiO2/Si substrate. Material analyses confirm the 1T (octahedral) structure and the quasi-2D nature of the prepared TaSe2. Temperature-dependent resistivity reveals that the multilayer 1T-TaSe2 obtained by our method undergoes a commensurate charge-density wave (CCDW) transition at around 500 K. This synthesis process has been applied to synthesize MoSe2 and HfSe2 and expanded for synthesis of one more transition-metal dichalcogenide (TMD) material. In addition, the main issue of the process, that is, the excess metal capping on the TMD layers, is solved by the reduction of thickness of the as-deposited metal thin film in this work.
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Affiliation(s)
- Hsu-Sheng Tsai
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
- Research
Center of Basic Space Science, Harbin Institute
of Technology, 150001 Harbin, China
| | - Fan-Wei Liu
- Department
of Materials Science and Engineering, National
Tsing Hua University, 30013 Hsinchu, Taiwan, R.O.C.
| | - Jhe-Wei Liou
- Department
of Physics, National Central University, 32001 Taoyuan, Taiwan, R. O. C.
| | - Chong-Chi Chi
- Department
of Materials Science and Engineering, National
Tsing Hua University, 30013 Hsinchu, Taiwan, R.O.C.
| | - Shin-Yi Tang
- Department
of Materials Science and Engineering, National
Tsing Hua University, 30013 Hsinchu, Taiwan, R.O.C.
| | - Changan Wang
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Hao Ouyang
- Department
of Materials Science and Engineering, National
Tsing Hua University, 30013 Hsinchu, Taiwan, R.O.C.
| | - Yu-Lun Chueh
- Department
of Materials Science and Engineering, National
Tsing Hua University, 30013 Hsinchu, Taiwan, R.O.C.
| | - Chaoming Liu
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
- Research
Center of Basic Space Science, Harbin Institute
of Technology, 150001 Harbin, China
| | - Shengqiang Zhou
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Wei-Yen Woon
- Department
of Physics, National Central University, 32001 Taoyuan, Taiwan, R. O. C.
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19
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Sumesh CK, Peter SC. Two-dimensional semiconductor transition metal based chalcogenide based heterostructures for water splitting applications. Dalton Trans 2019; 48:12772-12802. [DOI: 10.1039/c9dt01581g] [Citation(s) in RCA: 53] [Impact Index Per Article: 10.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Recent research and development is focused in an intensive manner to increase the efficiency of solar energy conversion into electrical energy via photovoltaics and photo-electrochemical reactions.
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Affiliation(s)
- C. K. Sumesh
- Department of Physical Sciences
- P. D. Patel Institute of Applied Sciences
- Charotar University of Science and Technology (CHARUSAT)
- Changa-388421
- India
| | - Sebastian C. Peter
- New Chemistry Unit
- Jawaharlal Nehru Centre for Advanced Scientific Research
- Bengaluru 560064
- India
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20
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Batzill M. Mirror twin grain boundaries in molybdenum dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:493001. [PMID: 30457114 DOI: 10.1088/1361-648x/aae9cf] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Mirror twin grain boundaries (MTBs) exist at the interface between two grains of 60° rotated hexagonal transition metal dichalcogenides (TMDC). These grain boundaries form a regular atomic structure that extends in one dimension and thus may be described as a one-dimensional (1D) lattice embedded in the 2D TMDC. In this review, the different atomic structures and compositions of these MTBs are discussed. The obvious formation of MTBs is by coalescence of two twinned grains. In addition, however, in MoSe2 and MoTe2 a different formation mechanism has been revealed for the formation of Mo-rich MTBs. It has been shown that excess Mo can be incorporated into the TMDC lattices. These excess Mo atoms can then reorganize into closed, triangular MTB-loops that can grow in size by adding more Mo atoms to them. This mechanism allows the formation of dense MTB networks in MoSe2 and MoTe2. Such MTB networks have been observed in samples grown by molecular beam epitaxy (MBE) and consequently their presence needs to be considered in understanding the properties of MBE grown MoSe2 and MoTe2. Density functional theory as well as photoemission spectroscopy of MTB networks have shown that MTBs exhibit dispersing 1D-bands that intersect the Fermi-level, thus suggesting that these are 1D electron systems. Consequently, experimental data have been interpreted to reveal a charge density wave (or Peierls) instability, as well as a Tomonaga-Luttinger liquid behavior for electrons confined in 1D. We discuss these observations and the controversies that remain in the interpretation of some data. The metallic properties of the MTBs and their formation in dense networks also sparked the potential use of such crystal modifications for making metallic contacts to MoTe2 or MoSe2. Moreover, these crystal modifications may also boost the catalytic properties of these materials.
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Affiliation(s)
- Matthias Batzill
- Department of Physics, University of South Florida, Tampa, FL 33620, United States of America
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21
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Shi J, Chen X, Zhao L, Gong Y, Hong M, Huan Y, Zhang Z, Yang P, Li Y, Zhang Q, Zhang Q, Gu L, Chen H, Wang J, Deng S, Xu N, Zhang Y. Chemical Vapor Deposition Grown Wafer-Scale 2D Tantalum Diselenide with Robust Charge-Density-Wave Order. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1804616. [PMID: 30589471 DOI: 10.1002/adma.201804616] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2018] [Revised: 08/21/2018] [Indexed: 06/09/2023]
Abstract
2D metallic transition metal dichalcogenides (MTMDCs) are benchmark systems for uncovering the dimensionality effect on fascinating quantum physics, such as charge-density-wave (CDW) order, unconventional superconductivity, and magnetism, etc. However, the scalable and thickness-tunable syntheses of such envisioned MTMDCs are still challenging. Meanwhile, the origin of CDW order at the 2D limit is controversial. Herein, the direct synthesis of wafer-scale uniform monolayer 2H-TaSe2 films and thickness-tunable flakes on Au foils by chemical vapor deposition is accomplished. Based on the thickness-tunable 2H-TaSe2, the robust periodic lattice distortions that relate to CDW orders by low-temperature transmission electron microscopy are directly visualized. Particularly, a phase diagram of the transition temperature from normal metallic to CDW phases with thickness by variable-temperature Raman characterizations is established. Intriguingly, dramatically enhanced transition temperature from bulk value ≈90 to ≈125 K is observed from monolayer 2H-TaSe2, which can be explained by the enhanced electron-phonon coupling mechanism. More importantly, an ultrahigh specific capacitance is also obtained for the as-grown TaSe2 on carbon cloth as supercapacitor electrodes. The results hereby open up novel avenues toward the large-scale preparation of high-quality MTMDCs, and shed light on their applications in exploring some fundamental issues.
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Affiliation(s)
- Jianping Shi
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
| | - Xuexian Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Liyun Zhao
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yue Gong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Min Hong
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yahuan Huan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhepeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Pengfei Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yong Li
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Qing Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
| | - Lin Gu
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Ningsheng Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
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22
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Wang D, Zhang X, Guo G, Gao S, Li X, Meng J, Yin Z, Liu H, Gao M, Cheng L, You J, Wang R. Large-Area Synthesis of Layered HfS 2(1- x )Se 2 x Alloys with Fully Tunable Chemical Compositions and Bandgaps. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1803285. [PMID: 30589474 DOI: 10.1002/adma.201803285] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2018] [Revised: 07/19/2018] [Indexed: 06/09/2023]
Abstract
Alloying transition metal dichalcogenides (TMDs) with different compositions is demonstrated as an effective way to acquire 2D semiconductors with widely tunable bandgaps. Herein, for the first time, the large-area synthesis of layered HfS2(1- x )Se2 x alloys with fully tunable chemical compositions on sapphire by chemical vapor deposition is reported, greatly expanding and enriching the family of 2D TMDs semiconductors. The configuration and high quality of their crystal structure are confirmed by various characterization techniques, and the bandgap of these alloys can be continually modulated from 2.64 to 1.94 eV with composition variations. Furthermore, prototype HfS2(1- x )Se2 x photodetectors with different Se compositions are fabricated, and the HfSe2 photodetector manifests the best performance among all the tested HfS2(1- x )Se2 x devices. Remarkably, by introducing a hexagonal boron nitride layer, the performance of the HfSe2 photodetector is greatly improved, exhibiting a high on/off ratio exceeding 105, an ultrafast response time of about 190 µs, and a high detectivity of 1012 Jones. This simple and controllable approach opens up a new way to produce high-quality 2D HfS2(1- x )Se2 x layers, which are highly qualified candidates for the next-generation application in high-performance optoelectronics.
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Affiliation(s)
- Denggui Wang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xingwang Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Gencai Guo
- College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Shihan Gao
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xingxing Li
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Junhua Meng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhigang Yin
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Heng Liu
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Menglei Gao
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Likun Cheng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jingbi You
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Ruzhi Wang
- College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, P. R. China
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23
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Han GH, Duong DL, Keum DH, Yun SJ, Lee YH. van der Waals Metallic Transition Metal Dichalcogenides. Chem Rev 2018; 118:6297-6336. [PMID: 29957928 DOI: 10.1021/acs.chemrev.7b00618] [Citation(s) in RCA: 103] [Impact Index Per Article: 17.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Abstract
Transition metal dichalcogenides are layered materials which are composed of transition metals and chalcogens of the group VIA in a 1:2 ratio. These layered materials have been extensively investigated over synthesis and optical and electrical properties for several decades. It can be insulators, semiconductors, or metals revealing all types of condensed matter properties from a magnetic lattice distorted to superconducting characteristics. Some of these also feature the topological manner. Instead of covering the semiconducting properties of transition metal dichalcogenides, which have been extensively revisited and reviewed elsewhere, here we present the structures of metallic transition metal dichalcogenides and their synthetic approaches for not only high-quality wafer-scale samples using conventional methods (e.g., chemical vapor transport, chemical vapor deposition) but also local small areas by a modification of the materials using Li intercalation, electron beam irradiation, light illumination, pressures, and strains. Some representative band structures of metallic transition metal dichalcogenides and their strong layer-dependence are reviewed and updated, both in theoretical calculations and experiments. In addition, we discuss the physical properties of metallic transition metal dichalcogenides such as periodic lattice distortion, magnetoresistance, superconductivity, topological insulator, and Weyl semimetal. Approaches to overcome current challenges related to these materials are also proposed.
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Affiliation(s)
- Gang Hee Han
- Center for Integrated Nanostructure Physics (CINAP) , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea.,Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP) , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea.,Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Dong Hoon Keum
- Center for Integrated Nanostructure Physics (CINAP) , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea.,Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Seok Joon Yun
- Center for Integrated Nanostructure Physics (CINAP) , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea.,Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP) , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea.,Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea.,Department of Physics , Sungkyunkwan University , Suwon 16419 , Republic of Korea
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24
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Tsipas P, Tsoutsou D, Fragkos S, Sant R, Alvarez C, Okuno H, Renaud G, Alcotte R, Baron T, Dimoulas A. Massless Dirac Fermions in ZrTe 2 Semimetal Grown on InAs(111) by van der Waals Epitaxy. ACS NANO 2018; 12:1696-1703. [PMID: 29314824 DOI: 10.1021/acsnano.7b08350] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Single and few layers of the two-dimensional (2D) semimetal ZrTe2 are grown by molecular beam epitaxy on InAs(111)/Si(111) substrates. Excellent rotational commensurability, van der Waals gap at the interface and moiré pattern are observed indicating good registry between the ZrTe2 epilayer and the substrate through weak van der Waals forces. The electronic band structure imaged by angle resolved photoelectron spectroscopy shows that valence and conduction bands cross at the Fermi level exhibiting abrupt linear dispersions. The latter indicates massless Dirac Fermions which are maintained down to the 2D limit suggesting that single-layer ZrTe2 could be considered as the electronic analogue of graphene.
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Affiliation(s)
- Polychronis Tsipas
- National Center for Scientific Research "Demokritos" , 15310 Athens, Greece
| | - Dimitra Tsoutsou
- National Center for Scientific Research "Demokritos" , 15310 Athens, Greece
| | - Sotirios Fragkos
- National Center for Scientific Research "Demokritos" , 15310 Athens, Greece
| | - Roberto Sant
- University Grenoble Alpes , 38400 Grenoble, France
- Néel Institute, CNRS , 38042 Grenoble, France
| | - Carlos Alvarez
- University Grenoble Alpes , 38400 Grenoble, France
- CEA/INAC-MEM , F-38054 Grenoble Cedex 9, France
| | - Hanako Okuno
- University Grenoble Alpes , 38400 Grenoble, France
- CEA/INAC-MEM , F-38054 Grenoble Cedex 9, France
| | - Gilles Renaud
- University Grenoble Alpes , 38400 Grenoble, France
- CEA/INAC-MEM , F-38054 Grenoble Cedex 9, France
| | - Reynald Alcotte
- Universite Grenoble Alpes, CNRS, CEA/Leti Minatec, LTM , F-38054 Grenoble Cedex 9, France
| | - Thierry Baron
- Universite Grenoble Alpes, CNRS, CEA/Leti Minatec, LTM , F-38054 Grenoble Cedex 9, France
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25
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Zhou K, Wickramaratne D, Ge S, Su S, De A, Lake RK. Interlayer resistance of misoriented MoS 2. Phys Chem Chem Phys 2018; 19:10406-10412. [PMID: 28379226 DOI: 10.1039/c6cp08927e] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Interlayer misorientation in transition metal dichalcogenides alters their interlayer distance, total energy, electronic band structure, and vibrational modes, but its effect on the interlayer resistance is not known. This study analyzes the interlayer resistance of misoriented bilayer MoS2 as a function of the misorientation angle, and it shows that interlayer misorientation exponentially increases the electron resistivity while leaving the hole resistivity almost unchanged. The physics, determined by the wave functions at the high symmetry points, are generic among the popular semiconducting transition metal dichalcogenides (TMDs). The asymmetrical effect of misorientation on the electron and hole transport may be exploited in the design and optimization of vertical transport devices such as a bipolar transistor. Density functional theory provides the interlayer coupling elements used for the resistivity calculations.
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Affiliation(s)
- Kuan Zhou
- Department of Physics and Astronomy, University of California, Riverside, CA 92521-0204
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26
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Aretouli KE, Tsoutsou D, Tsipas P, Marquez-Velasco J, Aminalragia Giamini S, Kelaidis N, Psycharis V, Dimoulas A. Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2016; 8:23222-23229. [PMID: 27537619 DOI: 10.1021/acsami.6b02933] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.
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Affiliation(s)
- Kleopatra Emmanouil Aretouli
- Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece
- University of Athens , Department of Physics, Section of Solid State Physics, 15684 Athens, Greece
| | - Dimitra Tsoutsou
- Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece
| | - Polychronis Tsipas
- Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece
| | - Jose Marquez-Velasco
- Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece
- National Technical University of Athens , Department of Physics, 15780 Athens, Greece
| | - Sigiava Aminalragia Giamini
- Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece
- University of Athens , Department of Physics, Section of Solid State Physics, 15684 Athens, Greece
| | - Nicolaos Kelaidis
- Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece
| | - Vassilis Psycharis
- Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece
| | - Athanasios Dimoulas
- Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece
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