Warm White Light Emitting Diodes with Gelatin-Coated AgInS2/ZnS Core/Shell Quantum Dots

Gelatin-Coated TiO2/Pd Hybrid: A Potentially Useful Nanomaterial to Enhance Antibacterial and Anticancer Properties

Hybrid nanomaterials have attracted considerable interest in biomedicine because of their fascinating characteristics and wide range of applications in targeted drug delivery, antibacterial activity, and cancer treatment. This study developed a gelatin-coated Titanium oxide/palladium (TiO2/Pd) hybrid nanomaterial to enhance the antibacterial and anticancer capabilities. Morphological and structural analyses were conducted to characterize the synthesized hybrid nanomaterial. The surface texture of the hybrid nanomaterials was examined by high-resolution transmission electron microscopy (HR-TEM) and field-emission scanning electron microscopy (FE-SEM). The FE-SEM image revealed the bulk of the spherically shaped particles and the aggregated tiny granules. Energy dispersive X-ray spectroscopy (EDS) revealed Ti, Pd, C, and O. X-ray diffraction (XRD) revealed the gelatin-coated TiO2/Pd to be in the anatase form. Fourier transform infrared spectroscopy examined the interactions among the gelatin-coated TiO2/Pd nanoparticles. The gelatin-coated TiO2/Pd nanomaterials exhibited high antibacterial activity against Escherichia coli (22 mm) and Bacillus subtilis (17 mm) compared to individual nanoparticles, confirming the synergistic effect. More importantly, the gelatin-coated TiO2/Pd hybrid nanomaterial exhibited remarkable cytotoxic effects on A549 lung cancer cells which shows a linear increase with the concentration of the nanomaterial. The hybrid nanomaterials displayed higher toxicity to cancer cells than the nanoparticles alone. Furthermore, the cytotoxic activity against human cancer cells was verified by the generation of reactive oxygen species and nuclear damage. Therefore, gelatin-coated TiO2/Pd nanomaterials have potential uses in treating cancer and bacterial infections.

Antibacterial Activity and Cytotoxicity Screening of Acyldepsipeptide-1 Analogues Conjugated to Silver/Indium/Sulphide Quantum Dots

The continuous rise in bacterial infections and antibiotic resistance is the driving force behind the search for new antibacterial agents with novel modes of action. Antimicrobial peptides (AMPs) have recently gained attention as promising antibiotic agents with the potential to treat drug-resistant infections. Several AMPs have shown a lower propensity towards developing resistance compared to conventional antibiotics. However, these peptides, especially acyldepsipeptides (ADEPs) present with unfavorable pharmacokinetic properties, such as high toxicity and low bioavailability. Different ways to improve these peptides to be drug-like molecules have been explored, and these include using biocompatible nano-carriers. ADEP1 analogues (SC005-8) conjugated to gelatin-capped Silver/Indium/Sulfide (AgInS2) quantum dots (QDs) improved the antibacterial activity against Gram-negative (Escherichia coli and Pseudomonas aeruginosa), and Gram-positive (Bacillus subtilis, Staphylococcus aureus and Methicillin-resistant Staphylococcus aureus) bacteria. The ADEP1 analogues exhibited minimum inhibition concentrations (MIC) between 63 and 500 µM, and minimum bactericidal concentrations (MBC) values between 125 and 750 µM. The AgInS2-ADEP1 analogue conjugates showed enhanced antibacterial activity as evident from the MIC and MBC values, i.e., 1.6-25 µM and 6.3-100 µM, respectively. The AgInS2-ADEP1 analogue conjugates were non-toxic against HEK-293 cells at concentrations that showed antibacterial activity. The findings reported herein could be helpful in the development of antibacterial treatment strategies.

One-pot synthesis of Ag-In-Ga-S nanocrystals embedded in a Ga2O3 matrix and enhancement of band-edge emission by Na+ doping

I-III-VI-based semiconductor quantum dots (QDs) have been intensively explored because of their unique controllable optoelectronic properties. Here we report one-pot synthesis of Na-doped Ag-In-Ga-S (AIGS) QDs incorporated in a Ga2O3 matrix. The obtained QDs showed a sharp band-edge photoluminescence peak at 557 nm without a broad-defect site emission. The PL quantum yield (QY) of such QDs was 58%, being much higher than that of AIGS QDs without Na+ doping, 29%. The obtained Na-doped AIGS/Ga2O3 composite particles were used as an emitting layer of green QD light-emitted diodes. A sharp electroluminescence (EL) peak was observed at 563 nm, being similar to that in the PL spectrum of the QDs used. The external quantum efficiency of the device was 0.6%.

Improved Luminous Efficiency of AgInS2 Quantum Dots and Zeolitic Imidazolate Framework-70 Composite for White Light Emitting Diode Applications

The application of multiple quantum dots (QDs) in the field of white light emitting diodes (WLEDs) is still an important challenge due to their low luminous efficiency and quenching phenomenon. In this paper, we prepared AgInS2 QDs/zeolitic imidazolate framework-70 (AIS/ZIF-70) composite by a microwave hydrothermal method. Owing to the high porosity and stability of ZIF-70, it could effectively prevent quenching issues due to the aggregation of QDs. Since the ZIF-70 and QDs were chemically bonded, the formation of the ZnS layer could effectively passivate the surface defect and thus the quantum yield reached 21.49 % in aqueous solution. The luminous efficiency (LE) of the assembled AIS/ZIF-based WLED was reinforced by 6.8 times with a molar ratio of AgIn/Zn=18, i. e. at 5.26 % molar fraction of ZIF-70. Moreover, the color rendering index (CRI) and correlated color temperature (CCT) of AIS/ZIF-based WLED were 84.3 and 3631 K, respectively, indicating its potential application in solid-state lighting.

A Review on Multiple I-III-VI Quantum Dots: Preparation and Enhanced Luminescence Properties

I-III-VI type QDs have unique optoelectronic properties such as low toxicity, tunable bandgaps, large Stokes shifts and a long photoluminescence lifetime, and their emission range can be continuously tuned in the visible to near-infrared light region by changing their chemical composition. Moreover, they can avoid the use of heavy metal elements such as Cd, Hg and Pb and highly toxic anions, i.e., Se, Te, P and As. These advantages make them promising candidates to replace traditional binary QDs in applications such as light-emitting diodes, solar cells, photodetectors, bioimaging fields, etc. Compared with binary QDs, multiple QDs contain many different types of metal ions. Therefore, the problem of different reaction rates between the metal ions arises, causing more defects inside the crystal and poor fluorescence properties of QDs, which can be effectively improved by doping metal ions (Zn²⁺, Mn²⁺ and Cu⁺) or surface coating. In this review, the luminous mechanism of I-III-VI type QDs based on their structure and composition is introduced. Meanwhile, we focus on the various synthesis methods and improvement strategies like metal ion doping and surface coating from recent years. The primary applications in the field of optoelectronics are also summarized. Finally, a perspective on the challenges and future perspectives of I-III-VI type QDs is proposed as well.

Narrow-Bandwidth Blue-Emitting Ag-Ga-Zn-S Semiconductor Nanocrystals for Quantum-Dot Light-Emitting Diodes

I-III-VI type semiconductor nanocrystals (NCs) have attracted considerable attention in the display field. Herein, we realized the synthesis of narrow-bandwidth blue-emitting Ag-Ga-Zn-S (AGZS) NCs via a facile one-pot method. Intriguingly, the Ag/Zn feeding ratio and Ag/Ga feeding ratio are crucial for the realization of narrow-bandwidth AGZS NCs. By choosing a Ag/Zn feeding ratio of 4:1 and Ag/Ga feeding ratio of 1:8, AGZS NCs demonstrate a typical blue emission at 470 nm with a narrow full width at half-maximum (fwhm) of 48 nm, which is mainly generated from the band-to-hole recombination rather than the donor-acceptor pair (DAP) recombination. Furthermore, a solution-processed quantum-dot light-emitting device based on AGZS NCs exhibits a narrow electroluminescent bandwidth of 53 nm and high luminance over 123.1 cd m^-2, as well as a high external quantum efficiency (EQE) of 0.40%. Our work highlights AGZS NCs with high color purity as an important candidate for blue-light-emitting devices.

Surface ligand chemistry on quaternary Ag(In x Ga1-x )S2 semiconductor quantum dots for improving photoluminescence properties

Ternary and quaternary semiconductor quantum dots (QDs) are candidates for cadmium-free alternatives. Among these, semiconductors containing elements from groups 11, 13, and 16 (i.e., I-III-VI2) are attracting increasing attention since they are direct semiconductors whose bandgap energies in the bulk state are tunable between visible and near infrared. The quaternary system of alloys consisting of silver indium sulfide (AgInS2; bandgap energy: E g = 1.8 eV) and silver gallium sulfide (AgGaS2; E g = 2.4 eV) (i.e., Ag[In x Ga1-x ]S2 (AIGS)) enables bandgap tuning over a wide range of visible light. However, the photoluminescence (PL) quantum yield (10-20%) of AIGS QDs is significantly lower than that of AgInS2 (60-70%). The present study investigates how to improve the PL quantum yield of AIGS QDs via surface ligand engineering. Firstly, the use of a mixture of oleic acid and oleylamine, instead of only oleylamine, as the solvent for the QD synthesis was attempted, and a threefold improvement of the PL quantum yield was achieved. Subsequently, a post-synthetic ligand exchange was performed. Although the addition of alkylphosphine, which is known as an L-type ligand, improved the PL efficiency only by 20%, the use of metal halides, which are categorized as Z-type ligands, demonstrated a twofold to threefold improvement of the PL quantum yield, with the highest value reaching 73.4%. The same procedure was applied to the band-edge emitting core/shell-like QDs that were synthesized in one batch based on our previous findings. While the as-prepared core/shell-like QDs exhibited a PL quantum yield of only 9%, the PL quantum yield increased to 49.5% after treatment with metal halides.

Facile aqueous synthesis of ZnInS quantum dots and its application for selective detection of Co2+Ions

The synthesis of ZnInS (ZIS) quantum dots (QDs) in aqueous medium using thioglycolic acid (TGA) and sodium citrate as dual capping agents has been reported. The as-synthesized ZIS QDs were water soluble, emitting at 512 nm and nearly spherical in shape with average particle size of 8.9 ± 1.4 nm. The as-synthesized ZIS QDs were tested for its fluorescence response against different metal ions and the results revealed that ZIS QDs were selectively quenched by Co²⁺ions compared to other ions. The fluorescence sensing experiment showed that ZIS QDs has a linear response against the concentration of Co²⁺ions (0.1-100μM ) with the detection limit of 0.099μM. Based on the transmission electron microscope and absorption spectroscopy analyzes, the fluorescence quenching is attributed to the formation of surface ligand-metal complex (TGA-Co²⁺ions) which caused aggregation of the QDs. The present method explores the synthesis of zero-dimentional ZIS QDs and its potential in the selective detection of Co²⁺ions in aqueous solution.

Flexible translucent chitosan-glycerin/QD nanocomposite glue for anti-counterfeiting films with strong adhesion and stability

With the rapid development of commodity circulation, more attention has been paid to the anticounterfeiting technology of commodities, including stability, universality and ease of distinguishing. The authors report the use of gelatin-chitosan-glycerin/QD nanocomposite-functionalized glue for luminescent anti-counterfeiting labels. As the blend and plasticizer, the addition of chitosan and glycerin effectively improved the flexibility and formability of the gelatin-chitosan-glycerin/QD composite films, which show excellent mechanical properties, including high transparency, luminescence and flexibility, and they are easy to prepare on a large scale, providing certain reference values for new anticounterfeiting technology applying a variety of morphologies.

Cu–Cd–Zn–S/ZnS core/shell quantum dot/polyvinyl alcohol flexible films for white light-emitting diodes

We present a facile route for the synthesis of water-soluble Cu–Cd–Zn–S/ZnS core/shell quantum dots (QDs) by simple pH regulation. The PL spectra of Cu–Cd–Zn–S/ZnS core/shell quantum dots can cover the whole visible light region in the case of only two ratios of Cu/Cd/Zn. The emission wavelength of Cu–Cd–Zn–S/ZnS QDs can be conveniently tuned from 474 to 515 and 548 to 629 nm by adjusting the pH value when the ratios of Cu/Cd/Zn are fixed at 1 : 5 : 80 and 1 : 5 : 10, respectively. It is worth noting that under the condition of a constant Cu/Cd/Zn ratio, the UV-vis absorption spectra do not change with the fluorescence spectra, indicating that the band gap of QDs remains unchanged during the change of pH value. The photoluminescence (PL) quantum yield of the as-prepared QDs with yellow emission is up to 76%. The QDs also show excellent chemical stability after the deposition of the ZnS shell. Luminescent and flexible films are fabricated by combining Cu–Cd–Zn–S QDs with polyvinyl alcohol (PVA). The QD/PVA flexible hybrid films are successfully applied on top of a conventional blue InGaN chip for remote-type warm-white LEDs. As-fabricated warm-white LEDs exhibit a higher color rendering index (CRI) of about 89.2 and a correlated color temperature (CCT) of 4308 K.

We present a facile route for the synthesis of water-soluble Cu–Cd–Zn–S/ZnS core/shell quantum dots (QDs) by simple pH regulation.

Enhancement of Fluorescence Emission for Tricolor Quantum Dots Assembled in Polysiloxane toward Solar Spectrum-Simulated White Light-Emitting Devices

Commercial white light-emitting diodes (LEDs) have the undesirable characteristics of blue-rich emission and low color rendering index (CRI), while the constituent quantum dots (QDs) suffer from aggregation-induced fluorescence quenching and poor stability. Herein, a strategy is developed to assemble tricolor QDs into a polysiloxane matrix using a polymer-mediated hybrid approach whereby the hybrid composite exhibits a significant enhancement of aggregation-dispersed emission, outstanding photostability, high thermal stability, and outstanding fluorescence recovery. Using the as-prepared hybrid fluorescent materials, the fabricated LEDs exhibit solar spectrum-simulated emission with adjustable Commission Internationale de L'Eclairage coordinates, correlated color temperature, and a recorded CRI of 97. Furthermore, they present no ultraviolet emission and weak blue emission, thus indicating an ideal healthy and high-CRI white LED lighting source.

Optical properties and colorimetry of gelatine gels prepared in different saline solutions

Gelatine has been widely used in many multidisciplinary research fields due to its biocompatibility. Using saline solutions in the gelation of gelatine allows for new properties to be incorporated into the prepared gels. This study examined the optical and colour properties of gelatine gels prepared in saline solutions, containing three different metal chlorides (NiCl₂·6H₂O, CoCl₂·6H₂O, and CrCl₃·6H₂O) with concentrations of up to 50%, to prepare three groups of gels. FTIR spectroscopy indicated a loss in the helical structure of the metal-containing gelatine gels, and a shift in the amide bands towards lower wavenumbers. From the thermogravimetric analysis (TGA), the starting degradation temperatures (SDTs) of the prepared gelatine gels were found to be correlated to the concentration of the gelling solutions. All SDTs were above 250 °C, making these gels suitable for standing temperatures beyond the daily range. UV-vis spectroscopy showed that d-d transitions were responsible for the colour properties of the metal-containing gelatine gels. It is concluded that the studied properties and the measured parameters were found to depend on both salt type and concentration. With the current findings, the prepared gels can be used as optical thermometers, colour-selective corner cube retroreflectors, laser components, and coatings for OLEDs.

Single-Component Color-Tunable Gd(pic)3: Eu3+ Phosphor Based on a Metal-Organic Framework for Near-UV White-Light-Emitting Diodes

Compared with their multicomponent analogues, single-component white-light-emitting diodes (WLEDs) can eliminate the disadvantages such as high cost, fluorescence self-absorption, poor machinability, and reproducibility, but how to produce white light with high quality in a single-phase host is still a big challenge. In the work, a series of Eu³⁺/Tb³⁺-doped Gd(pic)₃ and La(pic)₃ are obtained through solvothermal conditions with picolinic acid (Hpic) and lanthanide nitrate. Researchers could regularly modulate the emitting color of phosphors by adjusting the excitation wavelength as well as the relative concentration of Ln³⁺ ions to obtain white light. Different luminance values [especially quantum yield (QYs)] between host materials Gd(pic)₃ and La(pic)₃ are investigated, which shows that doping of Eu³⁺ into Gd(pic)₃ can improve QY to a great extent. By employing Gd_0.9512Eu_0.0488(pic)₃ and Gd_0.9141Eu_0.0451Tb_0.0408(pic)₃ as phosphors, we successfully fabricated two excellent near-ultraviolet (365 nm) WLEDs with CIE chromaticity coordinates (0.3052, 0.3462) and (0.3007, 0.3448), relatively low color-correlated temperature (6755, 7001 K), and high color rendering index (R _a = 71.8, 72.9). This approach may open a new prospect for developing single-phase near-ultraviolet phosphors with high efficiency.

Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

Stranski-Krastanov (SK) growth mode is widely adopted for the self-assembled growth of semiconductor quantum dots (QDs), wherein a relatively large critical thickness is essential and a thick wetting layer (WL) is formed beneath the QD layer. In this paper, we report the metal organic vapor phase epitaxy of green InGaN QDs, employing a growth interruption method to decrease the critical thickness and improve the morphology of QDs. The QDs exhibit similar photoluminescence properties with those grown by conventional SK mode, implying the existence of a WL. We experimentally verify that the formation of QDs, whether based on the SK mode or the growth interruption method, conforms to the phase separation theory. However, the density of QDs grown by the interruption method exhibits abnormal dependence on the strain when a quantum well (QW) is inserted beneath the QD layer. Furthermore, the underlying QW not only influences the morphology of the QDs but also plays as a reservoir of electrons, which helps enhance the photoluminescence and the electroluminescence of the QDs. The method of QD growth with improved morphology and luminescence by introducing the QW-QD coupled nanostructure is universally applicable to similar material systems. Furthermore, a 550 nm green light-emitting diode (LED) and a 526 nm superluminescent LED based on the nanostructure are demonstrated.

High-Bandwidth White-Light System Combining a Micro-LED with Perovskite Quantum Dots for Visible Light Communication

This work proposes a high-bandwidth white-light system consisting of a blue gallium nitride (GaN) micro-LED (μLED) exciting yellow-emitting CsPbBr_1.8I_1.2 perovskite quantum dots (YQDs) for high-speed real-time visible light communication (VLC). The packaged 80 μm × 80 μm blue-emitting μLED has a modulation bandwidth of ∼160 MHz and a peak emission wavelength of ∼445 nm. The achievable bandwidth of the white-light system is up to 85 MHz in the absence of filters and equalization technology. Meanwhile, the bandwidth of the YQDs as a color converter is as high as 73 MHz with the blue GaN μLED as the pump source. A maximum data rate of 300 Mbps can be achieved by taking advantage of the high bandwidth of the white-light system using the non-return-to-zero on-off keying (NRZ-OOK) modulation scheme. The resultant bit-error rate is 2.0 × 10^-3, well beneath the forward error correction criterion of 3.8 × 10^-3 required for error-free data transmission. In addition, the YQDs which we proposed as a color converter possess high stability for VLC. After half a year, the achievable bandwidths of the white-light system and the YQDs are still up to 83 and 70 MHz, respectively. This study provides the direction of developing high-bandwidth white-light system for both high-efficiency solid-state lighting and high-speed VLC.

A ZnS nanocrystal/reduced graphene oxide composite anode with enhanced electrochemical performances for lithium-ion batteries

A simple route for the preparation of ZnS nanocrystal/reduced graphene oxide (ZnS/RGO) by a hydrothermal synthesis process was achieved. The chemical composition, morphology, and structural characterization reveal that the ZnS/RGO composite is composed of sphalerite-phased ZnS nanocrystals uniformly dispersed on functional RGO sheets with a high specific surface area. The ZnS/RGO composite was utilized as an anode in the construction of a high-performance lithium-ion battery. The ZnS/RGO composite with appropriate RGO content exhibits a high reversible specific capacity (780 mA h g^-1), excellent cycle stability over 100 cycles (71.3% retention), and good rate performance at 2C (51.2% of its capacity when measured at a 0.1C rate). To further investigate this ZnS/RGO anode for practical use in full Li-ion cells, we tested the electrochemical performance of the ZnS/RGO anode at different cut-off voltages for the first time. The presence of RGO plays an important role in providing high conductivity as well as a substrate with a high surface area. This helps alleviate the typically problems associated with volume expansion and shrinkage during prolonged cycling. Additionally, the RGO provides multiple nucleation points that result in a uniformly dispersed film of nanosized ZnS that covers its surface. Thus, the high surface area RGO enables high electronic conductivity and fast charge transfer kinetics for ZnS lithiation/delithiation.

From Large-Scale Synthesis to Lighting Device Applications of Ternary I-III-VI Semiconductor Nanocrystals: Inspiring Greener Material Emitters

Quantum dots with fabulous size-dependent and color-tunable emissions remained as one of the most exciting inventories in nanomaterials for the last 3 decades. Even though a large number of such dot nanocrystals were developed, CdSe still remained as unbeatable and highly trusted lighting nanocrystals. Beyond these, the ternary I-III-VI family of nanocrystals emerged as the most widely accepted greener materials with efficient emissions tunable in visible as well as NIR spectral windows. These bring the high possibility of their implementation as lighting materials acceptable to the community and also to the environment. Keeping these in mind, in this Perspective, the latest developments of ternary I-III-VI nanocrystals from their large-scale synthesis to device applications are presented. Incorporating ZnS, tuning the composition, mixing with other nanocrystals, and doping with Mn ions, light-emitting devices of single color as well as for generating white light emissions are also discussed. In addition, the future prospects of these materials in lighting applications are also proposed.

AgInS2-ZnS Quantum Dots: Excited State Interactions with TiO2 and Photovoltaic Performance

Multinary quantum dots such as AgInS₂ and alloyed AgInS₂-ZnS are an emerging class of semiconductor materials for applications in photovoltaic and display devices. The nanocrystals of (AgInS₂)_x-(ZnS)_1-x (for x = 0.67) exhibit a broad emission with a maximum at 623 nm and interact strongly with TiO₂ nanostructures by injecting electrons from the excited state. The electron transfer rate constant as determined from transient absorption spectroscopy was 1.8 × 10¹⁰ s^-1. The photovoltaic performance was evaluated over a period of a few weeks to demonstrate the stability of AgInS₂-ZnS when utilized as sensitizers in solar cells. We report a power conversion efficiency of 2.25% of our champion cell 1 month after its fabrication. The limitations of AgInS₂-ZnS nanocrystals in achieving greater solar cell efficiency are discussed.

Temperature dependent photoluminescence of composition tunable ZnxAgInSe quantum dots and temperature sensor application

Quantum dots (QDs) exhibit not only wide tunability of luminescence but also complex optical properties because of the large degree of freedom in their structure and chemical composition. Quaternary Zn_xAgInSe QDs with different Zn/Ag ratios were synthesized and examined as temperature sensors. The relationship among the luminescence energy, emission intensity, and full-width at half-maximum (FWHM) of the emission band at different temperatures was investigated. To understand the photoluminescence mechanism, time-resolved photoluminescence spectra were recorded. Moreover, the dependence of the luminescence peak energy and FWHM on temperature was investigated, and a small deviation from the actual temperature was observed, indicative of the use of Zn_xAgInSe QDs as high sensitivity temperature sensors.

Synthetic strategies and biomedical applications of I–III–VI ternary quantum dots

In this review, we discuss recent advances of I–III–VI QDs with a major focus on synthesis and biomedical applications; advantages include low toxicity and fluorescent tuning in the biological window.

Beneficial effects of water in the colloidal synthesis of InP/ZnS core-shell quantum dots for optoelectronic applications

We demonstrate that the presence of a small amount of water as an impurity during the hot-injection synthesis can significantly decrease the emission lines full width at half-maximum (FWHM) and improve the quantum yield (QY) of InP/ZnS quantum dots (QDs). By utilizing the water present in the indium precursor and solvent, we obtained InP/ZnS QDs emitting around 530 nm with a FWHM as narrow as 46 nm and a QY up to 45%. Without water, the synthesized QDs have emission around 625 nm with a FWHM of 66 nm and a QY of about 33%. Absorption spectra, XRD and XPS analyses revealed that when water is present, an amorphous phosphate layer is formed over the InP QDs and inhibits the QD growth. This amorphous layer favors the formation of a very thick ZnS shell by decreasing the lattice mismatch between the InP core and the ZnS shell. We further show the possibility to tune the emission wavelengths of InP/ZnS QDs by simply adjusting the amount of water present in the system while keeping all the other reaction parameters (i.e., precursor concentration, reaction temperature and time) constant. As an example of their application in light-emitting diodes (LEDs), the green and red InP/ZnS QDs are combined with a blue LED chip to produce white light.

High color rendering index warm white light emitting diodes fabricated from AgInS2/ZnS quantum dot/PVA flexible hybrid films

A high color rendering warm-white LED is fabricated by fixing suitable thicknesses of the green and red AIS/ZnS QD/PVA luminescent films on top of a conventional blue InGaN chip.

Inorganic red perovskite quantum dot integrated blue chip: a promising candidate for high color-rendering in w-LEDs

Schematic representation of the generation of warm-white lightviaa red perovskite quantum dot (R-PQD) assisted YAG:Ce phosphor blend on a blue chip.