Catalyst Self-Assembly for Scalable Patterning of Sub 10 nm Ultrahigh Aspect Ratio Nanopores in Silicon

The Process and Mechanism of Preparing Nanoporous Silicon: Helium Ion Implantation

Ion implantation is an effective way to control performance in semiconductor technology. In this paper, the fabrication of 1~5 nm porous silicon by helium ion implantation was systemically studied, and the growth mechanism and regulation mechanism of helium bubbles in monocrystalline silicon at low temperatures were revealed. In this work, 100 keV He ions (1~7.5 × 10¹⁶ ions/cm²) were implanted into monocrystalline silicon at 115 °C~220 °C. There were three distinct stages in the growth of helium bubbles, showing different mechanisms of helium bubble formation. The minimum average diameter of a helium bubble is approximately 2.3 nm, and the maximum number density of the helium bubble is 4.2 × 10²³ m^-3 at 175 °C. The porous structure may not be obtained at injection temperatures below 115 °C or injection doses below 2.5 × 10¹⁶ ions/cm². In the process, both the ion implantation temperature and ion implantation dose affect the growth of helium bubbles in monocrystalline silicon. Our findings suggest an effective approach to the fabrication of 1~5 nm nanoporous silicon, challenging the classic view of the relationship between process temperature or dose and pore size of porous silicon, and some new theories are summarized.

Microfabrication of X-ray Optics by Metal Assisted Chemical Etching: A Review

High-aspect-ratio silicon micro- and nanostructures are technologically relevant in several applications, such as microelectronics, microelectromechanical systems, sensors, thermoelectric materials, battery anodes, solar cells, photonic devices, and X-ray optics. Microfabrication is usually achieved by dry-etch with reactive ions and KOH based wet-etch, metal assisted chemical etching (MacEtch) is emerging as a new etching technique that allows huge aspect ratio for feature size in the nanoscale. To date, a specialized review of MacEtch that considers both the fundamentals and X-ray optics applications is missing in the literature. This review aims to provide a comprehensive summary including: (i) fundamental mechanism; (ii) basics and roles to perform uniform etching in direction perpendicular to the <100> Si substrate; (iii) several examples of X-ray optics fabricated by MacEtch such as line gratings, circular gratings array, Fresnel zone plates, and other X-ray lenses; (iv) materials and methods for a full fabrication of absorbing gratings and the application in X-ray grating based interferometry; and (v) future perspectives of X-ray optics fabrication. The review provides researchers and engineers with an extensive and updated understanding of the principles and applications of MacEtch as a new technology for X-ray optics fabrication.

Enhancement of Pool Boiling Heat Transfer Using Aligned Silicon Nanowire Arrays

Enhancing the critical heat flux (CHF), which is the capacity of heat dissipation, is important to secure high stability in two-phase cooling systems. Coolant supply to a dry hot spot is a major mechanism to prevent surface burn-out for enhancing the CHF. Here, we demonstrate a more ready supply of coolant using aligned silicon nanowires (A-SiNWs), with a high aspect ratio (>10) compared to that of conventional random silicon nanowires (R-SiNWs), which have a disordered arrangement, for additional CHF improvement. We propose the volumetric wicking rate, which represents the coolant supply properties by considering both the liquid supply velocity and the amount of coolant (i.e., wicking coefficient and wetted volume, respectively). Through experimental approaches, we confirm that the CHF is enhanced as the volumetric wicking rate is increased. In good agreement with the fabrication hypothesis, A-SiNWs demonstrate higher coolant supply abilities than those of R-SiNWs. The longest (7 μm) A-SiNWs have the highest volumetric wicking rate (25.11 × 10^-3 mm³/s) and increase the CHF to 245.6 W/cm², which is the highest value obtained using nanowires among reported data (178 and 26% enhanced vs unmodulated plain surface and R-SiNWs, respectively). These well-aligned SiNWs can increase the CHF significantly with efficient coolant supply, and it can ensure high stability in extremely high thermal load systems. Moreover, our study provides nanoscale interfacial design strategies for further improvement of heat dissipation.

Ultra-high aspect ratio functional nanoporous silicon via nucleated catalysts

Large scale, sub-10 nm high aspect ratio nanoporous silicon is fabricatedviascalable sputtering and a solution-based process.

Designs and processes toward high-aspect-ratio nanostructures at the deep nanoscale: unconventional nanolithography and its applications

The patterning of high-resolution-featured deep-nanoscale structures with a high aspect ratio (AR) has received increasing attention in recent years as a promising technique for a wide range of applications, including electrical, optical, mechanical and biological systems. Despite extensive efforts to develop viable nanostructure fabrication processes, a superior technique enabling defect-free, high-resolution control over a large area is still required. In this review, we focus on recent important advances in the designs and processes of high-resolution nanostructures possessing a high AR, including hierarchical and 3D patterns. The unique applications of these materials are also discussed.