Combinatorial Reactive Sputtering of In2S3 as an Alternative Contact Layer for Thin Film Solar Cells

Idealizing Tauc Plot for Accurate Bandgap Determination of Semiconductor with Ultraviolet-Visible Spectroscopy: A Case Study for Cubic Boron Arsenide

The Tauc plot is widely used to determine the bandgap of semiconductors, but the actual plot often exhibits significant baseline absorption below the expected bandgap, leading to bandgap discrepancies from two different extrapolations. In this work, we first discuss the origin of baseline absorption and show that both extrapolation methods can produce significant errors by simulating Tauc plots with varying levels of baseline absorption. We then propose and experimentally verify a new method that idealizes the absorption spectrum by removing its baseline before constructing the Tauc plot. Finally, we apply this new method to cubic boron arsenide (c-BAs), resolve its bandgap discrepancies, and obtain a converging bandgap of 1.835 eV based on both previous and new transmission spectra. The method is applicable to both indirect and direct bandgap semiconductors with absorption spectrum measured via transmission or diffuse reflectance, which will become essential to obtain accurate values of their bandgaps.

A microfluidic-enabled combinatorial formulation and integrated inkjet printing platform for evaluating functionally graded material blends

Sample library preparation is a central step in the process of evaluating materials with the general aim of efficient library formulation while minimizing resource consumption. We demonstrate here the first implementation of a microfluidic-enabled thin film sample library formulation platform with integrated inkjet printing capability for directly patterning these libraries with reduced material wastage. System development and general performance screening protocol for these patterned thin films are described. We study the combinatorial formulation capabilities of this system by focusing on some practical case studies for probing the electrical conductivity in organic, biocompatible and electroactive polymer/additive (PEDOT:PSS/DMSO and PEDOT:PSS/EG) blends. Functionally-graded thin film libraries are prepared by mixing ink components and directly dispensing the processed blends into programmed geometries using the integrated platform. Electrical and morphological characterization of these printed thin film libraries is conducted to validate the formulation efficacy of the platform. Interrogating these printed libraries, we were able to iteratively identify the location of conductivity maxima for the studied blends and corroborate the morphological basis of this enhancement with established theories.

Structural and optical properties of amorphous Si-Ge-Te thin films prepared by combinatorial sputtering

The lack of order in amorphous chalcogenides offers them novel properties but also adds increased challenges in the discovery and design of advanced functional materials. The amorphous compositions in the Si–Ge–Te system are of interest for many applications such as optical data storage, optical sensors and Ovonic threshold switches. But an extended exploration of this system is still missing. In this study, magnetron co-sputtering is used for the combinatorial synthesis of thin film libraries, outside the glass formation domain. Compositional, structural and optical properties are investigated and discussed in the framework of topological constraint theory. The materials in the library are classified as stressed-rigid amorphous networks. The bandgap is heavily influenced by the Te content while the near-IR refractive index dependence on Ge concentration shows a minimum, which could be exploited in applications. A transition from a disordered to a more ordered amorphous network at 60 at% Te, is observed. The thermal stability study shows that the formed crystalline phases are dictated by the concentration of Ge and Te. New amorphous compositions in the Si–Ge–Te system were found and their properties explored, thus enabling an informed and rapid material selection and design for applications.

High-responsivity broadband photodetection of an ultra-thin In2S3/CIGS heterojunction on steel

${\rm{Cu}}({\rm{In}},{\rm{Ga}}){\rm{S}}{{\rm{e}}_2}$ (CIGS) is a promising light harvesting material for large-area broadband photodetection, but it has been rarely studied up to now. Here an In₂S₃/CIGS heterojunction photodiode on steel is shown to be highly broadband photo-sensitive, with a photoresponsivity over 0.8 A/W, an external quantum efficiency over 100%, and a detectivity over 8×10¹⁰ Jones from 505 to 910nm under a reverse bias of 1 V. Moreover, the CIGS photodiode exhibits an outstanding weak light detection ability (i.e., at light power density of ${{20}}\;\unicode{x00B5} {\rm{W/c}}{{\rm{m}}^2}$), reaching a record responsivity of 2.06 A/W, an impressive EQE of 293%, and a good detectivity of ${2.3} \times {{1}}{{{0}}^{11}}$ Jones at 870 nm under 1 V reverse bias. Importantly, the CIGS photodiode, working as a self-powered photodetector, under 0 V, shows a record detectivity of ${\sim}{3.4} \times {{1}}{{{0}}^{12}}$ Jones with a high responsivity of ${\sim}{0.44}\;{\rm{A/W}}$ and a high EQE of ${\sim}{{63}}\%$, at 870 nm.

A Facile Process for Partial Ag Substitution in Kesterite Cu2ZnSn(S,Se)4 Solar Cells Enabling a Device Efficiency of over 12

A cation substitution in Cu₂ZnSn(S,Se)₄ (CZTSSe) offers a viable strategy to reduce the open-circuit voltage (V_oc)-deficit by altering the characteristics of band-tail states, antisite defects, and related defect clusters. Herein, we report a facile single process, i.e., simply introducing a thin Ag layer on a metallic precursor, to effectively improve the device characteristics and performances in kesterite (Ag_x,Cu_1-x)₂ZnSn(S_y,Se_1-y)₄ (ACZTSSe) solar cells. Probing into the relationship between the external quantum efficiency derivative (dEQE/dλ) and device performances revealed the V_oc-deficit characteristics in the ACZTSSe solar cells as a function of Cu and Ag contents. The fabricated champion ACZTSSe solar cell device showed an efficiency of 12.07% and a record low V_oc-deficit of 561 mV. Thorough investigations into the mechanism underpinning the improved performance in the ACZTSSe device further revealed the improved band-tailing characteristic, effective minority carrier lifetime, and diode factors as well as reduced antisite defects and related defect clusters as compared to the CZTSSe device. This study demonstrates the feasibility of effectively suppressing antisite defects, related defect clusters, and band-tailing characteristics by simply introducing a thin Ag layer on a metallic precursor in the kesterite solar cells, which in turn effectively reduces the V_oc-deficit.

Local Cu Component Engineering to Achieve Continuous Carrier Transport for Enhanced Kesterite Solar Cells

Although the traditional Cu-poor architecture addresses many limitations for Cu₂ZnSn(S,Se)₄ solar cells, its further development still encounters a bottleneck in terms of efficiency, primarily arising from the inferior charge transport within the quasineutral region and enlarged recombination at back contact. On the contrary, the electrical benign kesterite compound with higher Cu content may compensate for these shortages, but it will degrade device performance more pronouncedly at front contact because of the Fermi level pinning and more electric shunts. Based on the electric disparities on their independent side, in this work, we propose a new status of Cu component by exploring a large grain/fine grain/large grain trilayer architecture with higher Cu content near back contact and lower Cu content near front contact. The benefits of this bottom Cu-higher strategy are that it imposes a concentration gradient to drive carrier diffusion toward front contact and decreases the valence band edge offset in the rear of the device to aid in hole extraction. Also, it maintains the Cu-poor architecture at the near surface to facilitate hole quasi-Fermi level splitting. In return, the local Cu component engineering-mediated electric advances contribute to the highest efficiency of 12.54% for kesterite solar cells using amine-thiol solution systems so far.

Combinatorial Synthesis of Oxysulfides in the Lanthanum-Bismuth-Copper System

Establishing synthesis methods for a target material constitutes a grand challenge in materials research, which is compounded with use-inspired specifications on the format of the material. Solar photochemistry using thin film materials is a promising technology for which many complex materials are being proposed, and the present work describes application of combinatorial methods to explore the synthesis of predicted La-Bi-Cu oxysulfide photocathodes, in particular alloys of LaCuOS and BiCuOS. The variation in concentration of three cations and two anions in thin film materials, and crystallization thereof, is achieved by a combination of reactive sputtering and thermal processes including reactive annealing and rapid thermal processing. Composition and structural characterization establish composition-processing-structure relationships that highlight the breadth of processing conditions required for synthesis of LaCuOS and BiCuOS. The relative irreducibility of La oxides and limited diffusion indicate the need for high temperature processing, which conflicts with the temperature limits for mitigating evaporation of Bi and S. Collectively the results indicate that alloys of these phases will require reactive annealing protocols that are uniquely tailored to each composition, motivating advancement of dynamic processing capabilities to further automate discovery of synthesis routes.

Influence of Substrate Temperature during InxSy Sputtering on Cu(In,Ga)Se2/Buffer Interface Properties and Solar Cell Performance

Indium sulfide (InxSy)—besides CdS and Zn(O,S)—is already used as a buffer layer in chalcopyrite-type thin-film solar cells and modules. We discuss the influence of the substrate temperature during very fast magnetron sputtering of InxSy buffer layers on the interface formation and the performance of Cu(In,Ga)Se2 solar cells. The substrate temperature was increased from room temperature up to 240 °C, and the highest power conversion efficiencies were obtained at a temperature plateau around 200 °C, with the best values around 15.3%. Industrially relevant in-line co-evaporated polycrystalline Cu(In,Ga)Se2 absorber layers were used, which yield solar cell efficiencies of up to 17.1% in combination with a solution-grown CdS buffer. The chemical composition of the InxSy buffer as well as of the Cu(In,Ga)Se2/InxSy interface was analyzed by time-of-flight secondary ion mass spectrometry. Changes from homogenous and stoichiometric In2S3 layers deposited at RT to inhomogenous and more sulfur-rich and indium-deficient compositions for higher temperatures were observed. This finding is accompanied with a pronounced copper depletion at the Cu(In,Ga)Se2 absorber surface, and a sodium accumulation in the InxSy buffer and at the absorber/buffer interface. These last two features seem to be the origin for achieving the highest conversion efficiencies at substrate temperatures around 200 °C.

COMBIgor: Data-Analysis Package for Combinatorial Materials Science

Combinatorial experiments involve synthesis of sample libraries with lateral composition gradients requiring spatially resolved characterization of structure and properties. Because of the maturation of combinatorial methods and their successful application in many fields, the modern combinatorial laboratory produces diverse and complex data sets requiring advanced analysis and visualization techniques. In order to utilize these large data sets to uncover new knowledge, the combinatorial scientist must engage in data science. For data science tasks, most laboratories adopt common-purpose data management and visualization software. However, processing and cross-correlating data from various measurement tools is no small task for such generic programs. Here we describe COMBIgor, a purpose-built open-source software package written in the commercial Igor Pro environment and designed to offer a systematic approach to loading, storing, processing, and visualizing combinatorial data. It includes (1) methods for loading and storing data sets from combinatorial libraries, (2) routines for streamlined data processing, and (3) data-analysis and -visualization features to construct figures. Most importantly, COMBIgor is designed to be easily customized by a laboratory, group, or individual in order to integrate additional instruments and data-processing algorithms. Utilizing the capabilities of COMBIgor can significantly reduce the burden of data management on the combinatorial scientist.

Thin-Film Processing Routes for Combinatorial Materials Investigations-A Review

High-throughput combinatorial investigations are transforming materials discovery, phase diagram development, and processing optimization. Thin-film deposition techniques are frequently used to fabricate sample libraries employed in these studies. Various adaptations of well-known thin-film chemical vapor deposition (CVD) and physical vapor deposition (PVD) techniques utilized for the synthesis of inorganic combinatorial thin-film materials libraries are reviewed, with novel processing approaches being highlighted. Methods for developing gradients in composition of other film properties are described. Issues and considerations specific to thin-film processing of combinatorial materials libraries are discussed, with some emphasis on catalytic applications.

An Inter-Laboratory Study of Zn-Sn-Ti-O Thin Films using High-Throughput Experimental Methods

High-throughput experimental (HTE) techniques are an increasingly important way to accelerate the rate of materials research and development for many technological applications. However, there are very few publications on the reproducibility of the HTE results obtained across different laboratories for the same materials system, and on the associated sample and data exchange standards. Here, we report a comparative study of Zn-Sn-Ti-O thin films materials using high-throughput experimental methods at National Institute of Standards and Technology (NIST) and National Renewable Energy Laboratory (NREL). The thin film sample libraries were synthesized by combinatorial physical vapor deposition (cosputtering and pulsed laser deposition) and characterized by spatially resolved techniques for composition, structure, thickness, optical, and electrical properties. The results of this study indicate that all these measurement techniques performed at two different laboratories show excellent qualitative agreement. The quantitative similarities and differences vary by measurement type, with 95% confidence interval of 0.1-0.2 eV for the band gap, 24-29 nm for film thickness, and 0.08 to 0.37 orders of magnitude for sheet resistance. Overall, this work serves as a case study for the feasibility of a High-Throughput Experimental Materials Collaboratory (HTE-MC) by demonstrating the exchange of high-throughput sample libraries, workflows, and data.

Materials processing using radio-frequency ion-sources: Ion-beam sputter-deposition and surface treatment

The capabilities of ion-beam techniques for thin-film processing, i.e., for materials deposition by ion-beam sputtering and surface treatment, are reviewed. The basic interaction mechanisms between ions and solids are summarized and related to materials processing by ion sources. Typical geometries of ion sources, targets, and samples are discussed for corresponding experimental apparatus. The versatility of ion-beam techniques in the preparation of thin films and multilayer structures is illustrated by several examples: ion-beam sputter-deposition of various binary oxide materials (including crystalline MgO, NiO, ZnO, Sn_xO_y, and Cu_xO_y) as well as combinatorial growth of materials libraries of amorphous ternary oxides. Furthermore, controlled ion-beam etching of surfaces is discussed.

Combinatorial Nitrogen Gradients in Sputtered Thin Films

High-throughput synthesis and characterization methods can significantly accelerate the rate of experimental research. For physical vapor deposition (PVD), these methods include combinatorial sputtering with intentional gradients of metal/metalloid composition, temperature, and thickness across the substrate. However, many other synthesis parameters still remain out of reach for combinatorial methods. Here, we extend combinatorial sputtering parameters to include gradients of gaseous elements in thin films. Specifically, a nitrogen gradient was generated in a thin film sample library by placing two MnTe sputtering sources with different gas flows (Ar and Ar/N₂) opposite of one another during the synthesis. The nitrogen content gradient was measured along the sample surface, correlating with the distance from the nitrogen source. The phase, composition, and optoelectronic properties of the resulting thin films change as a function of the nitrogen content. This work shows that gradients of gaseous elements can be generated in thin films synthesized by sputtering, expanding the boundaries of combinatorial science.

Chemically Deposited CdS Buffer/Kesterite Cu2ZnSnS4 Solar Cells: Relationship between CdS Thickness and Device Performance

Earth-abundant, copper-zinc-tin-sulfide (CZTS), kesterite, is an attractive absorber material for thin-film solar cells (TFSCs). However, the open-circuit voltage deficit (V_oc-deficit) resulting from a high recombination rate at the buffer/absorber interface is one of the major challenges that must be overcome to improve the performance of kesterite-based TFSCs. In this paper, we demonstrate the relationship between device parameters and performances for chemically deposited CdS buffer/CZTS-based heterojunction TFSCs as a function of buffer layer thickness, which could change the CdS/CZTS interface conditions such as conduction band or valence band offsets, to gain deeper insight and understanding about the V_oc-deficit behavior from a high recombination rate at the CdS buffer/kesterite interface. Experimental results show that device parameters and performances are strongly dependent on the CdS buffer thickness. We postulate two meaningful consequences: (i) Device parameters were improved up to a CdS buffer thickness of 70 nm, whereas they deteriorated at a thicker CdS buffer layer. The V_oc-deficit in the solar cells improved up to a CdS buffer thickness of 92 nm and then deteriorated at a thicker CdS buffer layer. (ii) The minimum values of the device parameters were obtained at 70 nm CdS thickness in the CZTS TFSCs. Finally, the highest conversion efficiency of 8.77% (V_oc: 494 mV, J_sc: 34.54 mA/cm², and FF: 51%) is obtained by applying a 70 nm thick CdS buffer to the Cu₂ZnSn(S,Se)₄ absorber layer.

Solubility limits in quaternary SnTe-based alloys

A combined theoretical and experimental approach was used to determine the equilibrium as well as non-equilibrium solubility lines in the quaternary Sn_1−yMn_yTe_1−xSe_x alloy space, revealing a large area of accessible metastable phase space.

Combinatorial Study of Gradient Ag-Al Thin Films: Microstructure, Phase Formation, Mechanical and Electrical Properties

A combinatorial approach is applied to rapidly deposit and screen Ag-Al thin films to evaluate the mechanical, tribological, and electrical properties as a function of chemical composition. Ag-Al thin films with large continuous composition gradients (6-60 atom % Al) were deposited by a custom-designed combinatorial magnetron sputtering system. X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), scanning and transmission electron microscopy (SEM and TEM), X-ray photoelectron spectroscopy (XPS), nanoindentation, and four-point electrical resistance screening were employed to characterize the chemical composition, structure, and physical properties of the films in a time-efficient way. For low Al contents (<13 atom %), a highly (111)-textured fcc phase was formed. At higher Al contents, a (002)-textured hcp solid solution phase was formed followed by a fcc phase in the most Al-rich regions. No indication of a μ phase was observed. The Ag-Al films with fcc-Ag matrix is prone to adhesive material transfer leading to a high friction coefficient (>1) and adhesive wear, similar to the behavior of pure Ag. In contrast, the hexagonal solid solution phase (from ca. 15 atom %Al) exhibited dramatically reduced friction coefficients (about 15% of that of the fcc phase) and dramatically reduced adhesive wear when tested against the pure Ag counter surface. The increase in contact resistance of the Ag-Al films is limited to only 50% higher than a pure Ag reference sample at the low friction and low wear region (19-27 atom %). This suggests that a hcp Ag-Al alloy can have a potential use in sliding electrical contact applications and in the future will replace pure Ag in specific electromechanical applications.

Combinatorial Chemical Bath Deposition of CdS Contacts for Chalcogenide Photovoltaics

Contact layers play an important role in thin film solar cells, but new material development and optimization of its thickness is usually a long and tedious process. A high-throughput experimental approach has been used to accelerate the rate of research in photovoltaic (PV) light absorbers and transparent conductive electrodes, however the combinatorial research on contact layers is less common. Here, we report on the chemical bath deposition (CBD) of CdS thin films by combinatorial dip coating technique and apply these contact layers to Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) light absorbers in PV devices. Combinatorial thickness steps of CdS thin films were achieved by removal of the substrate from the chemical bath, at regular intervals of time, and in equal distance increments. The trends in the photoconversion efficiency and in the spectral response of the PV devices as a function of thickness of CdS contacts were explained with the help of optical and morphological characterization of the CdS thin films. The maximum PV efficiency achieved for the combinatorial dip-coating CBD was similar to that for the PV devices processed using conventional CBD. The results of this study lead to the conclusion that combinatorial dip-coating can be used to accelerate the optimization of PV device performance of CdS and other candidate contact layers for a wide range of emerging absorbers.

Band Alignment Engineering at Cu2O/ZnO Heterointerfaces

Energy band alignments at heterointerfaces play a crucial role in defining the functionality of semiconductor devices, yet the search for material combinations with suitable band alignments remains a challenge for numerous applications. In this work, we demonstrate how changes in deposition conditions can dramatically influence the functional properties of an interface, even within the same material system. The energy band alignment at the heterointerface between Cu2O and ZnO was studied using photoelectron spectroscopy with stepwise deposition of ZnO onto Cu2O and vice versa. A large variation of energy band alignment depending on the deposition conditions of the substrate and the film is observed, with valence band offsets in the range ΔEVB = 1.45-2.7 eV. The variation of band alignment is accompanied by the occurrence or absence of band bending in either material. It can therefore be ascribed to a pinning of the Fermi level in ZnO and Cu2O, which can be traced back to oxygen vacancies in ZnO and to metallic precipitates in Cu2O. The intrinsic valence band offset for the interface, which is not modified by Fermi level pinning, is derived as ΔEVB ≈ 1.5 eV, being favorable for solar cell applications.

Integration of p-type β-In2S3 thin films on III-nitride heterostructures for multiple functional applications

We report conversion of n-type InN thin films on III-nitride heterostructures to p-type β-In₂S₃ by postgrowth heat treatments in a sulfur-vapor environment and address their photoelectrical and photocatalytic properties for functional integrations.