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Popov G, Bačić G, Van Dijck C, Junkers LS, Weiß A, Mattinen M, Vihervaara A, Chundak M, Jalkanen P, Mizohata K, Leskelä M, Masuda JD, Barry ST, Ritala M, Kemell M. Atomic layer deposition of PbCl 2, PbBr 2 and mixed lead halide (Cl, Br, I) PbX nY 2-n thin films. Dalton Trans 2022; 51:15142-15157. [PMID: 36129328 DOI: 10.1039/d2dt02216h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Atomic layer deposition offers outstanding film uniformity and conformality on substrates with high aspect ratio features. These qualities are essential for mixed-halide perovskite films applied in tandem solar cells, transistors and light-emitting diodes. The optical and electronic properties of mixed-halide perovskites can be adjusted by adjusting the ratios of different halides. So far ALD is only capable of depositing iodine-based halide perovskites whereas other halide processes are lacking. We describe six new low temperature (≤100 °C) ALD processes for PbCl2 and PbBr2 that are crucial steps for the deposition of mixed-halide perovskites with ALD. Lead bis[bis(trimethylsilyl)amide]-GaCl3 and -TiBr4 processes yield the purest, crystalline, uniform and conformal films of PbCl2 and PbBr2 respectively. We show that these two processes in combination with a PbI2 process from the literature deposit mixed lead halide films. The four less optimal processes revealed that reaction by-products in lead halide deposition processes may cause film etching or incorporate themselves into the film.
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Affiliation(s)
- Georgi Popov
- Department of Chemistry, University of Helsinki, P. O. Box 55, FI-00014 Helsinki, Finland.
| | - Goran Bačić
- Department of Chemistry, Carleton University, 1125 Colonel By Drive, Ottawa, Ontario K1S 5B6, Canada
| | - Charlotte Van Dijck
- Department of Chemistry, University of Helsinki, P. O. Box 55, FI-00014 Helsinki, Finland.
| | - Laura S Junkers
- Department of Chemistry, University of Helsinki, P. O. Box 55, FI-00014 Helsinki, Finland.
| | - Alexander Weiß
- Department of Chemistry, University of Helsinki, P. O. Box 55, FI-00014 Helsinki, Finland.
| | - Miika Mattinen
- Department of Chemistry, University of Helsinki, P. O. Box 55, FI-00014 Helsinki, Finland.
| | - Anton Vihervaara
- Department of Chemistry, University of Helsinki, P. O. Box 55, FI-00014 Helsinki, Finland.
| | - Mykhailo Chundak
- Department of Chemistry, University of Helsinki, P. O. Box 55, FI-00014 Helsinki, Finland.
| | - Pasi Jalkanen
- Department of Physics, University of Helsinki, P. O. Box 43, FI-00014 Helsinki, Finland
| | - Kenichiro Mizohata
- Department of Physics, University of Helsinki, P. O. Box 43, FI-00014 Helsinki, Finland
| | - Markku Leskelä
- Department of Chemistry, University of Helsinki, P. O. Box 55, FI-00014 Helsinki, Finland.
| | - Jason D Masuda
- Department of Chemistry, Saint Mary's University, 923 Robie Street, Halifax, Nova Scotia B3H 3C3, Canada
| | - Seán T Barry
- Department of Chemistry, Carleton University, 1125 Colonel By Drive, Ottawa, Ontario K1S 5B6, Canada
| | - Mikko Ritala
- Department of Chemistry, University of Helsinki, P. O. Box 55, FI-00014 Helsinki, Finland.
| | - Marianna Kemell
- Department of Chemistry, University of Helsinki, P. O. Box 55, FI-00014 Helsinki, Finland.
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2
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Hadke S, Huang M, Chen C, Tay YF, Chen S, Tang J, Wong L. Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices. Chem Rev 2021; 122:10170-10265. [PMID: 34878268 DOI: 10.1021/acs.chemrev.1c00301] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Chalcogenide semiconductors offer excellent optoelectronic properties for their use in solar cells, exemplified by the commercialization of Cu(In,Ga)Se2- and CdTe-based photovoltaic technologies. Recently, several other chalcogenides have emerged as promising photoabsorbers for energy harvesting through the conversion of solar energy to electricity and fuels. The goal of this review is to summarize the development of emerging binary (Sb2X3, GeX, SnX), ternary (Cu2SnX3, Cu2GeX3, CuSbX2, AgBiX2), and quaternary (Cu2ZnSnX4, Ag2ZnSnX4, Cu2CdSnX4, Cu2ZnGeX4, Cu2BaSnX4) chalcogenides (X denotes S/Se), focusing especially on the comparative analysis of their optoelectronic performance metrics, electronic band structure, and point defect characteristics. The performance limiting factors of these photoabsorbers are discussed, together with suggestions for further improvement. Several relatively unexplored classes of chalcogenide compounds (such as chalcogenide perovskites, bichalcogenides, etc.) are highlighted, based on promising early reports on their optoelectronic properties. Finally, pathways for practical applications of emerging chalcogenides in solar energy harvesting are discussed against the backdrop of a market dominated by Si-based solar cells.
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Affiliation(s)
- Shreyash Hadke
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.,Energy Research Institute @ NTU (ERI@N), Interdisciplinary Graduate Programme, Nanyang Technological University, Singapore 637553, Singapore
| | - Menglin Huang
- Key Laboratory for Computational Physical Sciences (MOE), Key State Key Laboratory of ASIC and System and School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Chao Chen
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.,Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Ying Fan Tay
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.,Institute of Materials Research and Engineering (IMRE), Agency of Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Shiyou Chen
- Key Laboratory for Computational Physical Sciences (MOE), Key State Key Laboratory of ASIC and System and School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jiang Tang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.,Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Lydia Wong
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.,Singapore-HUJ Alliance for Research and Enterprise (SHARE), Nanomaterials for Energy and Energy-Water Nexus (NEW), Campus for Research Excellence and Technological Enterprise (CREATE), Singapore 138602, Singapore
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3
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Li T, Luo S, Wang X, Zhang L. Alternative Lone-Pair ns 2 -Cation-Based Semiconductors beyond Lead Halide Perovskites for Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008574. [PMID: 34060151 DOI: 10.1002/adma.202008574] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2020] [Revised: 03/22/2021] [Indexed: 06/12/2023]
Abstract
Lead halide perovskites have emerged in the last decade as advantageous high-performance optoelectronic semiconductors, and have undergone rapid development for diverse applications such as solar cells, light-emitting diodes , and photodetectors. While material instability and lead toxicity are still major concerns hindering their commercialization, they offer promising prospects and design principles for developing promising optoelectronic materials. The distinguished optoelectronic properties of lead halide perovskites stem from the Pb2+ cation with a lone-pair 6s2 electronic configuration embedded in a mixed covalent-ionic bonding lattice. Herein, we summarize alternative Pb-free semiconductors containing lone-pair ns2 cations, intending to offer insights for developing potential optoelectronic materials other than lead halide perovskites. We start with the physical underpinning of how the ns2 cations within the material lattice allow for superior optoelectronic properties. We then review the emerging Pb-free semiconductors containing ns2 cations in terms of structural dimensionality, which is crucial for optoelectronic performance. For each category of materials, the research progresses on crystal structures, electronic/optical properties, device applications, and recent efforts for performance enhancements are overviewed. Finally, the issues hindering the further developments of studied materials are surveyed along with possible strategies to overcome them, which also provides an outlook on the future research in this field.
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Affiliation(s)
- Tianshu Li
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Shulin Luo
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xinjiang Wang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Lijun Zhang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
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5
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Huang YT, Kavanagh SR, Scanlon DO, Walsh A, Hoye RLZ. Perovskite-inspired materials for photovoltaics and beyond-from design to devices. NANOTECHNOLOGY 2021; 32:132004. [PMID: 33260167 DOI: 10.1088/1361-6528/abcf6d] [Citation(s) in RCA: 38] [Impact Index Per Article: 12.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Lead-halide perovskites have demonstrated astonishing increases in power conversion efficiency in photovoltaics over the last decade. The most efficient perovskite devices now outperform industry-standard multi-crystalline silicon solar cells, despite the fact that perovskites are typically grown at low temperature using simple solution-based methods. However, the toxicity of lead and its ready solubility in water are concerns for widespread implementation. These challenges, alongside the many successes of the perovskites, have motivated significant efforts across multiple disciplines to find lead-free and stable alternatives which could mimic the ability of the perovskites to achieve high performance with low temperature, facile fabrication methods. This Review discusses the computational and experimental approaches that have been taken to discover lead-free perovskite-inspired materials, and the recent successes and challenges in synthesizing these compounds. The atomistic origins of the extraordinary performance exhibited by lead-halide perovskites in photovoltaic devices is discussed, alongside the key challenges in engineering such high-performance in alternative, next-generation materials. Beyond photovoltaics, this Review discusses the impact perovskite-inspired materials have had in spurring efforts to apply new materials in other optoelectronic applications, namely light-emitting diodes, photocatalysts, radiation detectors, thin film transistors and memristors. Finally, the prospects and key challenges faced by the field in advancing the development of perovskite-inspired materials towards realization in commercial devices is discussed.
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Affiliation(s)
- Yi-Teng Huang
- Department of Physics, University of Cambridge, JJ Thomson Ave, Cambridge CB3 0HE, United Kingdom
| | - Seán R Kavanagh
- Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom
- Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom
- Thomas Young Centre, University College London, Gower Street, London WC1E 6BT, United Kingdom
| | - David O Scanlon
- Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom
- Thomas Young Centre, University College London, Gower Street, London WC1E 6BT, United Kingdom
- Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE, United Kingdom
| | - Aron Walsh
- Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom
- Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea
| | - Robert L Z Hoye
- Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom
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Hossain MA, Khoo KT, Cui X, Poduval GK, Zhang T, Li X, Li WM, Hoex B. Atomic layer deposition enabling higher efficiency solar cells: A review. NANO MATERIALS SCIENCE 2020. [DOI: 10.1016/j.nanoms.2019.10.001] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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7
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In Situ Microgravimetric Study of Ion Exchanges in the Ternary Cu-In-S System Prepared by Atomic Layer Deposition. MATERIALS 2020; 13:ma13030645. [PMID: 32024105 PMCID: PMC7041370 DOI: 10.3390/ma13030645] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/17/2019] [Revised: 01/17/2020] [Accepted: 01/21/2020] [Indexed: 11/16/2022]
Abstract
Reaction mechanisms during the growth of multinary compounds by atomic layer deposition can be complex, especially for sulfide materials. For instance, the deposition of copper indium disulfide (CuInS2) shows a non-direct correlation between the cycle ratio, the growth per cycle of each binary growth cycles, i.e., CuxS and In2S3, and the film composition. This evidences side reactions that compete with the direct Atomic Layer Deposition (ALD) growth reactions and makes the deposition of large films very challenging. To develop a robust upscalable recipe, it is essential to understand the chemical surface reactions. In this study, reaction mechanisms in the Cu-In-S ternary system were investigated in-situ by using a quartz crystal microbalance system to monitor mass variations. Pure binary indium sulfide (In2S3) and copper sulfide (CuxS) thin film depositions on Al2O3 substrate were first studied. Then, precursors were transported to react on CuxS and In2S3 substrates. In this paper, gas-phase ion exchanges are discussed based on the recorded mass variations. A cation exchange between the copper precursor and the In2S3 is highlighted, and a solution to reduce it by controlling the thickness deposited for each stack of binary materials during the CuInS2 deposition is finally proposed.
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García RA, Cerdán-Pasarán A, Perez EAR, Pal M, Hernández MM, Mathews N. Phase pure CuSbS2 thin films by heat treatment of electrodeposited Sb2S3/Cu layers. J Solid State Electrochem 2020. [DOI: 10.1007/s10008-019-04475-3] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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9
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Oviroh PO, Akbarzadeh R, Pan D, Coetzee RAM, Jen TC. New development of atomic layer deposition: processes, methods and applications. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2019; 20:465-496. [PMID: 31164953 PMCID: PMC6534251 DOI: 10.1080/14686996.2019.1599694] [Citation(s) in RCA: 95] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2019] [Revised: 03/21/2019] [Accepted: 03/22/2019] [Indexed: 05/11/2023]
Abstract
Atomic layer deposition (ALD) is an ultra-thin film deposition technique that has found many applications owing to its distinct abilities. They include uniform deposition of conformal films with controllable thickness, even on complex three-dimensional surfaces, and can improve the efficiency of electronic devices. This technology has attracted significant interest both for fundamental understanding how the new functional materials can be synthesized by ALD and for numerous practical applications, particularly in advanced nanopatterning for microelectronics, energy storage systems, desalinations, catalysis and medical fields. This review introduces the progress made in ALD, both for computational and experimental methodologies, and provides an outlook of this emerging technology in comparison with other film deposition methods. It discusses experimental approaches and factors that affect the deposition and presents simulation methods, such as molecular dynamics and computational fluid dynamics, which help determine and predict effective ways to optimize ALD processes, hence enabling the reduction in cost, energy waste and adverse environmental impacts. Specific examples are chosen to illustrate the progress in ALD processes and applications that showed a considerable impact on other technologies.
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Affiliation(s)
- Peter Ozaveshe Oviroh
- Mechanical Engineering Science Department, Faculty of Engineering and the Built Environment, University of Johannesburg, Johannesburg, South Africa
| | - Rokhsareh Akbarzadeh
- Mechanical Engineering Science Department, Faculty of Engineering and the Built Environment, University of Johannesburg, Johannesburg, South Africa
| | - Dongqing Pan
- Department of Engineering Technology, University of North Alabama, Florence, AL, USA
| | - Rigardt Alfred Maarten Coetzee
- Mechanical Engineering Science Department, Faculty of Engineering and the Built Environment, University of Johannesburg, Johannesburg, South Africa
| | - Tien-Chien Jen
- Mechanical Engineering Science Department, Faculty of Engineering and the Built Environment, University of Johannesburg, Johannesburg, South Africa
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Peccerillo E, Durose K. Copper—antimony and copper—bismuth chalcogenides—Research opportunities and review for solar photovoltaics. ACTA ACUST UNITED AC 2018. [DOI: 10.1557/mre.2018.10] [Citation(s) in RCA: 31] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
AbstractThe ternary Cu-Sb- and Cu-Bi-chalcogenides present a rich range of compounds of potential use for large-scale photovoltaics from Earth abundant elements. This paper reviews the state of fundamental knowledge about them, and their technological status with regard to solar cells. Research targets and missing data are highlighted, which may provide opportunities to help realize the goal of sustainable photovoltaics.The family of ternary Cu-Sb- and Cu-Bi-chalcogenides and their solid solutions present a rich selection of potential candidates for Earth-abundant low toxicity photovoltaic (PV) absorber materials. Moreover, they have some novel features imparted by the ns2 lone pair of electrons on the Sb and Bi ions. This review evaluates them as electronic materials, including experimental and theoretical evaluations of their phases, thermodynamic stability, point defects, conductivity, optical data, and PV performances. Formation of the materials in bulk, thin film, and nanoforms and the properties of the materials are critically assessed with relevance to their suitability for PV devices. There is special emphasis on CuSbS2 and CuSbSe2 which form the mainstay of the device literature and provide the most insights into the present-day limitation of the device efficiencies to 3 or 4%. Missing features of the literature are highlighted and clear statements recommending potential research pathways are made, which may help advance the technological performance from its present stuck position.
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11
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Stroyuk O, Raevskaya A, Gaponik N. Solar light harvesting with multinary metal chalcogenide nanocrystals. Chem Soc Rev 2018; 47:5354-5422. [PMID: 29799031 DOI: 10.1039/c8cs00029h] [Citation(s) in RCA: 83] [Impact Index Per Article: 13.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
The paper reviews the state of the art in the synthesis of multinary (ternary, quaternary and more complex) metal chalcogenide nanocrystals (NCs) and their applications as a light absorbing or an auxiliary component of light-harvesting systems. This includes solid-state and liquid-junction solar cells and photocatalytic/photoelectrochemical systems designed for the conversion of solar light into the electric current or the accumulation of solar energy in the form of products of various chemical reactions. The review discusses general aspects of the light absorption and photophysical properties of multinary metal chalcogenide NCs, the modern state of the synthetic strategies applied to produce the multinary metal chalcogenide NCs and related nanoheterostructures, and recent achievements in the metal chalcogenide NC-based solar cells and the photocatalytic/photoelectrochemical systems. The review is concluded by an outlook with a critical discussion of the most promising ways and challenging aspects of further progress in the metal chalcogenide NC-based solar photovoltaics and photochemistry.
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Affiliation(s)
- Oleksandr Stroyuk
- L.V. Pysarzhevsky Institute of Physical Chemistry, National Academy of Sciences of Ukraine, 03028 Kyiv, Ukraine.
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Vinayakumar V, Shaji S, Avellaneda D, Aguilar-Martínez JA, Krishnan B. Copper antimony sulfide thin films for visible to near infrared photodetector applications. RSC Adv 2018; 8:31055-31065. [PMID: 35548774 PMCID: PMC9085606 DOI: 10.1039/c8ra05662e] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/02/2018] [Accepted: 08/22/2018] [Indexed: 01/14/2023] Open
Abstract
Ternary chalcostibite copper antimony sulfide (CuSbS2) is an emerging semiconductor material having applications in photovoltaics, energy storage and optoelectronics due to its high absorption coefficient, suitable bandgap, and it consists of non-toxic and earth abundant elements. CuSbS2 thin films are prepared by combining chemical bath deposition (antimony sulfide (Sb2S3)) and thermal evaporation (copper (Cu)) followed by a heat treatment and their application as visible to near infrared photodetectors is reported. Crystalline structure, elemental composition, chemical state, morphology and optoelectronic properties of the films were characterized by various techniques. The effect of three different Cu thicknesses (CAS 20, CAS 30 and CAS 40 nm) on the photodetection properties are evaluated under illumination using light emitting diodes (LEDs) and a laser. The photodetectors fabricated are successfully tested under different wavelengths, power densities and applied voltage and their photoresponse cyclic stability for each wavelength of illumination was recorded. From the sensitivity calculations, the sample with 20 nm Cu thickness (CAS 20) showed higher detection sensitivity for visible to near infrared wavelengths. Better responsivity results were obtained for CAS 40 because of its improved crystallinity and phase purity. Photodetector properties such as sensitivity and responsivity are evaluated for all the samples. These results are beneficial for cost effective and environment friendly photodetectors and optoelectronic devices based on CuSbS2 thin films. Copper antimony sulfide (CuSbS2) thin films for visible to near infrared photodetection![]()
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Affiliation(s)
- V. Vinayakumar
- Facultad de Ingeniería Mecánica y Eléctrica
- Universidad Autónoma de Nuevo León
- San Nicolás de los Garza
- Mexico
| | - S. Shaji
- Facultad de Ingeniería Mecánica y Eléctrica
- Universidad Autónoma de Nuevo León
- San Nicolás de los Garza
- Mexico
- Centro de Innovación
| | - D. Avellaneda
- Facultad de Ingeniería Mecánica y Eléctrica
- Universidad Autónoma de Nuevo León
- San Nicolás de los Garza
- Mexico
| | - J. A. Aguilar-Martínez
- Facultad de Ingeniería Mecánica y Eléctrica
- Universidad Autónoma de Nuevo León
- San Nicolás de los Garza
- Mexico
- Centro de Investigación e Innovación en Ingeniería Aeronáutica (CIIIA)
| | - B. Krishnan
- Facultad de Ingeniería Mecánica y Eléctrica
- Universidad Autónoma de Nuevo León
- San Nicolás de los Garza
- Mexico
- Centro de Innovación
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