Performance Investigation of Multilayer MoS2 Thin-Film Transistors Fabricated via Mask-free Optically Induced Electrodeposition

Device simulation study of multilayer MoS2Schottky barrier field-effect transistors

Molybdenum disulfide (MoS2) is a representative two-dimensional layered transition-metal dichalcogenide semiconductor. Layer-number-dependent electronic properties are attractive in the development of nanomaterial-based electronics for a wide range of applications including sensors, switches, and amplifiers. MoS2field-effect transistors (FETs) have been studied as promising future nanoelectronic devices with desirable features of atomic-level thickness and high electrical properties. When a naturallyn-doped MoS2is contacted with metals, a strong Fermi-level pinning effect adjusts a Schottky barrier and influences its electronic characteristics significantly. In this study, we investigate multilayer MoS2Schottky barrier FETs (SBFETs), emphasizing the metal-contact impact on device performance via computational device modeling. We find thatp-type MoS2SBFETs may be built with appropriate metals and gate voltage control. Furthermore, we propose ambipolar multilayer MoS2SBFETs with asymmetric metal electrodes, which exhibit gate-voltage dependent ambipolar transport behavior through optimizing metal contacts in MoS2device. Introducing a dual-split gate geometry, the MoS2SBFETs can further operate in four distinct configurations:p - p,n - n,p - n, andn - p. Electrical characteristics are calculated, and improved performance of a high rectification ratio can be feasible as an attractive feature for efficient electrical and photonic devices.

Nanoscale molecular rectifiers

The use of molecules bridged between two electrodes as a stable rectifier is an important goal in molecular electronics. Until recently, however, and despite extensive experimental and theoretical work, many aspects of our fundamental understanding and practical challenges have remained unresolved and prevented the realization of such devices. Recent advances in custom-designed molecular systems with rectification ratios exceeding 10⁵ have now made these systems potentially competitive with existing silicon-based devices. Here, we provide an overview and critical analysis of recent progress in molecular rectification within single molecules, self-assembled monolayers, molecular multilayers, heterostructures, and metal-organic frameworks and coordination polymers. Examples of conceptually important and best-performing systems are discussed, alongside their rectification mechanisms. We present an outlook for the field, as well as prospects for the commercialization of molecular rectifiers.

Stacked printed MoS2 and Ag electrodes using electrohydrodynamic jet printing for thin-film transistors

Transition metal dichalcogenide-based thin-film transistors (TFTs) have drawn intense research attention, but they suffer from high cost of materials and complex methods. Directly printed transistors have been in the limelight due to low cost and an environmentally friendly technique. An electrohydrodynamic (EHD) jet printing technique was employed to pattern both MoS₂ active layer and Ag source and drain (S/D) electrodes. Printed MoS₂ lines were patterned on a silicon wafer using a precursor solution and simple annealing, and the patterns were transferred on other SiO₂ substrates for TFT fabrication. On top of the patterned MoS₂, Ag paste was also patterned for S/D electrodes using EHD jet printing. The printed TFTs had a high on-off current ratio exceeding 10⁵, low subthreshold slope, and better hysteresis behavior after transferring MoS₂ patterns. This result could be important for practical TFT applications and could be extended to other 2D materials.

Anisotropic slot waveguides with bulk transition metal dichalcogenides for crosstalk reduction and high-efficiency mode conversion

Conventional slot waveguides (CSWs) consisting of an isotropic low-index material sandwiched by two high-index silicon wires have been extensively used in functional photonic devices, including chemical sensing, optical modulating, and all-optical signal processing, due to its significantly enhanced electric field perpendicular to the interfaces in the slot layer. However, there are two drawbacks to be improved if the CSWs are used for signal transmission in photonic integrated circuits, including the crosstalk between waveguides and direct butting mode conversion efficiency (MCE) to a silicon (Si)-strip waveguide. In this study, we propose an anisotropic SW with bulk transition metal dichalcogenide (ASWTMD) to relieve the two shortcomings by replacing the isotropic low-index slot layer with a bulk molybdenum disulfide layer having a high refractive index and giant optical anisotropy. We demonstrated the crosstalk reduction (CR) of the proposed ASWTMD by analyzing the mode profile, power confinement, and coupling strength. We also investigated the MCE by examining the mode overlap ratio and power evolution. The proposed ASWTMD shows significant CR and superior MCE for the transverse electric and transverse magnetic modes compared to those of a CSW with a SiO₂-slot layer. The present design paves the possible extensibility to other transition metal dichalcogenides (TMDs) for designing state-of-the-art TMD-based photonic devices exploiting their extraordinary optical properties.

Parallel Manipulation and Flexible Assembly of Micro-Spiral via Optoelectronic Tweezers

Micro-spiral has a wide range of applications in smart materials, such as drug delivery, deformable materials, and micro-scale electronic devices by utilizing the manipulation of electric fields, magnetic fields, and flow fields. However, it is incredibly challenging to achieve a massively parallel manipulation of the micro-spiral to form a particular microstructure in these conventional methods. Here, a simple method is reported for assembling micro-spirals into various microstructures via optoelectronic tweezers (OETs), which can accurately manipulate the micro-/bio-particles by projecting light patterns. The manipulation force of micro-spiral is analyzed and simulated first by the finite element simulation. When the micro-spiral lies at the bottom of the microfluidic chip, it can be translated or rotated toward the target position by applying control forces simultaneously at multiple locations on the long axis of the micro-spiral. Through the OET manipulation, the length of the micro-spiral chain can reach 806.45 μm. Moreover, the different parallel manipulation modes are achieved by utilizing multiple light spots. The results show that the micro-spirulina can be manipulated by a real-time local light pattern and be flexibly assembled into design microstructures by OETs, such as a T-shape circuit, link lever, and micro-coil pairs of devices. This assembly method using OETs has promising potential in fabricating innovative materials and microdevices for practical engineering applications.

Optoelectronic tweezers: a versatile toolbox for nano-/micro-manipulation

This review covers the fundamentals, recent progress and state-of-the-art applications of optoelectronic tweezers technology, and demonstrates that optoelectronic tweezers technology is a versatile and powerful toolbox for nano-/micro-manipulation.

Interaction between positive and negative dielectric microparticles/microorganism in optoelectronic tweezers

Optoelectronic tweezers (OET) is a noncontact micromanipulation technology for controlling microparticles and cells. In the OET, it is necessary to configure a medium with different electrical properties to manipulate different particles and to avoid the interaction between two particles. Here, a new method exploiting the interaction between different dielectric properties of micro-objects to achieve the trapping, transport, and release of particles in the OET system was proposed. Besides, the effect of interaction between the micro-objects with positive and negative dielectric properties was simulated by the arbitrary Lagrangian-Eulerian (ALE) method. In addition, compared with conventional OET systems relying on fabrication processes involving the assembly of photoelectric materials, a contactless OET platform with an iPad-based wireless-control interface was established to achieve convenient control. Finally, this platform was used in the interaction of swimming microorganisms (positive-dielectric properties) with microparticles (negative-dielectric properties) at different scales. It showed that one particle could interact with 5 particles simultaneously, indicating that the interaction can be applied to enhance the high-throughput transportation capacities of the OET system and assemble some special microstructures. Owing to the low power, microorganisms were free from adverse influence during the experiment. In the future, the interaction of particles in a simple OET platform is a promising alternative in micro-nano manipulation for controlling drug release from uncontaminated cells in targeted therapy research.

A Review on Optoelectrokinetics-Based Manipulation and Fabrication of Micro/Nanomaterials

Optoelectrokinetics (OEK), a fusion of optics, electrokinetics, and microfluidics, has been demonstrated to offer a series of extraordinary advantages in the manipulation and fabrication of micro/nanomaterials, such as requiring no mask, programmability, flexibility, and rapidness. In this paper, we summarize a variety of differently structured OEK chips, followed by a discussion on how they are fabricated and the ways in which they work. We also review how three differently sized polystyrene beads can be separated simultaneously, how a variety of nanoparticles can be assembled, and how micro/nanomaterials can be fabricated into functional devices. Another focus of our paper is on mask-free fabrication and assembly of hydrogel-based micro/nanostructures and its possible applications in biological fields. We provide a summary of the current challenges facing the OEK technique and its future prospects at the end of this paper.

Challenges and recent advancements of functionalization of two-dimensional nanostructured molybdenum trioxide and dichalcogenides

Atomically thin two-dimensional (2D) semiconductors are the thinnest functional semiconducting materials available today. Among them, both molybdenum trioxide and chalcogenides (MT&Ds) represent key components within the family of different 2D semiconductors for various electronic, optoelectronic and electrochemical applications due to their unique electronic, optical, mechanical and electrochemical properties. However, despite great progress in research dedicated to the development and fabrication of 2D MT&Ds observed within the last decade, there are significant challenges that affected their charge transport behavior and fabrication on a large scale as well as there is high dependence of the carrier mobility on the thickness. In this article, we review the recent progress in the carrier mobility engineering of 2D MT&Ds and elaborate devised strategies dedicated to the optimization of MT&D properties. Specifically, the latest physical and chemical methods towards the surface functionalization and optimization of the major factors influencing the extrinsic transport at the electrode-2D semiconductor interface are discussed.

Wafer-scale transferred multilayer MoS2 for high performance field effect transistors

Chemical vapor deposition synthesis of semiconducting transition metal dichalcogenides (TMDs) offers a new route to build next-generation semiconductor devices. But realization of continuous and uniform multilayer (ML) TMD films is still limited by their specific growth kinetics, such as the competition between surface and interfacial energy. In this work, a layer-by-layer vacuum stacking transfer method is applied to obtain uniform and non-destructive ML-MoS₂ films. Back-gated field effect transistor (FET) arrays of 1L- and 2L-MoS₂ are fabricated on the same wafer, and their electrical performances are compared. We observe a significant increase of field-effect mobility for 2L-MoS₂ FETs, up to 32.5 cm² V^-1 s^-1, which is seven times higher than that of 1L-MoS₂ (4.5 cm² V^-1 s^-1). Then we also fabricated 1L-, 2L-, 3L-, and 4L-MoS₂ FETs to further investigate the thickness-dependent characteristics of transferred ML-MoS₂. Measurement results show a higher mobility but a smaller current on/off ratio as the layer number increases, suggesting that a balance between mobility and current on/off ratio can be achieved in 2L- and 3L-MoS₂ FETs. Dual-gated structure is also investigated to demonstrate an improved electrostatic control of the ML-MoS₂ channel.

Fabrication of Sub-Micrometer-Sized MoS2 Thin-Film Transistor by Phase Mode AFM Lithography

The phase mode atomic force microscopy (AFM) lithography and monolayer lift-off process are combined to fabricate electronics based on 2D materials (2DMs), which remove the need for pre-fabricating markers and increase the accuracy of the overlay and alignment. The promising phase mode of AFM lithography eliminates the drawbacks of the conventional force mode such as the over-cut, under-cut, debris effect, and severe tip wear. The planar size of MoS₂ thin-film transistors is shrunken down to sub-micrometer by the proposed method, and the fabricated devices demonstrate n-type characteristics. It offers a more flexible and easier way to fabricate prototypes of sub-micrometer-sized 2DMs based devices, and gives the opportunity to explore the size effect on the performance of 2DMs devices.

3D SERS substrate based on Au-Ag bi-metal nanoparticles/MoS2 hybrid with pyramid structure

It is very vital to construct the dense hot spots for the strong surface-enhanced Raman scattering (SERS) signals. We take full advantage of the MoS₂ edge-active sites induced from annealing the Ag film on the surface of the MoS₂. Furthermore, the composite structure of Au-Ag bi-metal nanoparticles (NPs)/MoS₂ hybrid with pyramid structure is obtained by the in situ grown AuNPs around AgNPs, which serves the optimal SERS performance (enhancement factor is ~9.67 × 10⁹) in experiment. Due to the introduction of AuNPs with the simple method, the denser hot spots contribute greatly to the stronger local electric field, which is also confirmed by the finite-different time-domain (FDTD) simulation. Therefore, the ultralow limit of detection (the LOD of 10^-13 and 10^-12 M respectively for the resonant R6G and non-resonant CV), quantitative detection and excellent reproducibility are achieved by the proposed SERS substrate. For practical application, the melamine molecule is detected with the LOD of 10^-10 M using the proposed SERS substrate that has the potential to be a food security sensor.

MoS2 Quantum Dots@TiO2 Nanotube Arrays: An Extended-Spectrum-Driven Photocatalyst for Solar Hydrogen Evolution

TiO₂ nanotube arrays (TiO₂ NTAs) decorated with molybdenum disulfide quantum dots (MoS₂ QDs) were synthesized by a facile electrodeposition method and used as a composite photocatalyst. MoS₂ QDs/TiO₂ NTAs showed enhanced photocatalytic activity compared with pristine TiO₂ NTAs for solar light-promoted H₂ evolution without adding any sacrificial agents or cocatalysts. The photocatalytic activity was influenced by the amount of MoS₂ QDs coated on TiO₂ NTAs. The optimal composition showed excellent photocatalytic activity, achieving H₂ evolution rates of 31.36, 5.29, and 1.67 μmol cm^-2  h^-1 corresponding to ultraviolet (UV, λ<420 nm), visible (Vis, λ≥420 nm), and near-infrared (NIR, λ>760) illumination, respectively. The improved photocatalytic activity was attributed to the decreased bandgap and the surface plasmonic properties of MoS₂ QDs/TiO₂ NTAs, which promoted electron-hole pair separation and the absorption capacity for Vis and NIR light. This study presents a facile approach for fabricating MoS₂ QDs/TiO₂ NTA heterostructures for efficient photocatalytic H₂ evolution, which will facilitate the development of designing new photocatalysts for environment and energy applications.

An ultrasensitive detection of miRNA-155 in breast cancer via direct hybridization assay using two-dimensional molybdenum disulfide field-effect transistor biosensor

MicroRNAs (miRNAs), critical biomarkers of acute and chronic diseases, play key regulatory roles in many biological processes. As a result, robust assay platforms to enable an accurate and efficient detection of low-level miRNAs in complex biological samples are of great significance. In this work, a label-free and direct hybridization assay using molybdenum disulfide (MoS₂) field-effect transistor (FET) biosensor has been developed for ultrasensitive detection of miRNA-155 as a breast cancer biomarker in human serum and cell-line samples. MoS₂, the novel 2D layered material with excellent physical and chemical properties, was prepared through sequential solvent exchange method and was used as an active channel material. MoS₂ was comprehensively characterized by spectroscopic and microscopic methods and it was applied for fabrication of FET device by drop-casting MoS₂ flacks suspension onto the FET surface. MoS₂ FET device showed a relatively low subthreshold swing of 48.10mV/decade and a high mobility of 1.98 × 10³cm²V^-1s^-1. Subsequently, probe miRNA-155 strands were immobilized on the surface of the MoS₂ FET device. Under optimized conditions detection limit of 0.03fM and concentration range 0.1fM to 10nM were achieved. The developed biosensor not only was capable to identification of fully matched versus one-base mismatch miRNA-155 sequence, but also it could detect target miRNA-155 in spiked real human serum and extracts from human breast cancer cell-line samples. This approach paves a way for label-free, early detection of miRNA as a biomarker in cancer diagnostics with very high sensitivity and good specificity, thus offering a significant potential for clinical application.