Electric-Field-Adjustable Time-Dependent Magnetoelectric Response in Martensitic FeRh Alloy

Robust Antiferromagnetic FeRh Films on Mica

FeRh shows an antiferromagnetic to ferromagnetic phase transition above room temperature, which permits its use as an antiferromagnetic memory element. However, its antiferromagnetic order is sensitive to small variations in crystallinity and composition, challenging its integration into flexible devices. Here, we show that flexible FeRh films of high crystalline quality can be synthesized by using mica as a substrate, followed by a mechanical exfoliation of the mica. The magnetic and transport data indicate that the FeRh films display a sharp antiferromagnetic to ferromagnetic phase transition. Magnetotransport data allow for the observation of two distinguishable resistance states, which are written after a field-cooling procedure. It is shown that the memory states are robust under the application of magnetic fields of up to 10 kOe.

High-speed metamagnetic switching of FeRh through Joule heating

Due to its proximity to room temperature and demonstrated high degree of temperature tunability, FeRh's metamagnetic ordering transition is attractive for novel high-performance computing devices seeking to use magnetism as the state variable. We demonstrate electrical control of the antiferromagnetic-to-ferromagnetic transition via Joule heating in FeRh wires. The magnetic transition of FeRh is accompanied by a change in resistivity, which can be probed electrically and allows for integration into switching devices. Finite element simulations based on abrupt state transition within each domain result in a globally smooth transition that agrees with the experimental findings and provides insight into the thermodynamics involved. We measure a 150 K decrease in transition temperature with currents up to 60 mA, limited only by the dimensions of the device. The sizeable shift in transition temperature scales with current density and wire length, suggesting the absolute resistance and heat dissipation of the substrate are also important. The FeRh phase change is evaluated by pulsed I-V using a variety of bias conditions. We demonstrate high speed (~ ns) memristor-like behavior and report device performance parameters such as switching speed and power consumption that compare favorably with state-of-the-art phase change memristive technologies.

Direct-Write of Nanoscale Domains with Tunable Metamagnetic Order in FeRh Thin Films

We have directly written nanoscale patterns of magnetic ordering in FeRh films using focused helium-ion beam irradiation. By varying the dose, we pattern arrays with metamagnetic transition temperatures that range from the as-grown film temperature to below room temperature. We employ transmission electron microscopy, X-ray diffraction, and temperature-dependent transport measurements to characterize the as-grown film, and magneto-optic Kerr effect imaging to quantify the He⁺ irradiation-induced changes to the magnetic order. Moreover, we demonstrate temperature-dependent optical microscopy and conductive atomic force microscopy as indirect probes of the metamagnetic transition that are sensitive to the differences in dielectric properties and electrical conductivity, respectively, of FeRh in the antiferromagnetic (AF) and ferromagnetic (FM) states. Using density functional theory, we quantify strain- and defect-induced changes in spin-flip energy to understand their influence on the metamagnetic transition temperature. This work holds promise for in-plane AF-FM spintronic devices, by reducing the need for multiple patterning steps or different materials, and potentially eliminating interfacial polarization losses due to cross material interfacial spin scattering.

Reversible control of magnetism in FeRh thin films

The multilayer of approximate structure MgO(100)/[nFe51Rh49(63 Å)/57Fe51Rh49(46 Å)]10 deposited at 200 °C is primarily of paramagnetic A1 phase and is fully converted to the magnetic B2 phase by annealing at 300 °C for 60 min. Subsequent irradiation by 120 keV Ne+ ions turns the thin film completely to the paramagnetic A1 phase. Repeated annealing at 300 °C for 60 min results in 100% magnetic B2 phase, i.e. a process that appears to be reversible at least twice. The A1 → B2 transformation takes place without any plane-perpendicular diffusion while Ne+ irradiation results in significant interlayer mixing.

Solid-state synthesis, magnetic and structural properties of interfacial B2-FeRh(001) layers in Rh/Fe(001) films

Here we first report results of the start of the solid-state reaction at the Rh/Fe(001) interface and the structural and magnetic phase transformations in 52Rh/48Fe(001), 45Rh/55Fe(001), 68Rh/32Fe(001) bilayers from room temperature to 800 °C. For all bilayers the non-magnetic nanocrystalline phase with a B2 structure (nfm-B2) is the first phase that is formed on the Rh/Fe(001) interface near 100 °C. Above 300 °C, without changing the nanocrystalline B2 structure, the phase grows into the low-magnetization modification α_lʹ (M_S^l ~ 825 emu/cm³) of the ferromagnetic α^ʹ phase which has a reversible α_lʹ ↔ αʺ transition. After annealing 52Rh/48Fe(001) bilayers above 600 °C the α_lʹ phase increases in grain size and either develops into α_hʹ with high magnetization (M_S^h ~ 1,220 emu/cm³) or remains in the α_lʹ phase. In contrast to α_lʹ, the α_hʹ ↔ αʺ transition in the α_hʹ films is completely suppressed. When the annealing temperature of the 45Rh/55Fe(001) samples is increased from 450 to 800 °C the low-magnetization nanocrystalline α_lʹ films develop into high crystalline perfection epitaxial α_hʹ(001) layers, which have a high magnetization of ~ 1,275 emu/cm³. α_hʹ(001) films do not undergo a transition to an antiferromagnetic αʺ phase. In 68Rh/32Fe(001) samples above 500 °C non-magnetic epitaxial γ(001) layers grow on the Fe(001) interface as a result of the solid-state reaction between the epitaxial α_lʹ(001) and polycrystalline Rh films. Our results demonstrate not only the complex nature of chemical interactions at the low-temperature synthesis of the nfm-B2 and α_lʹ phases in Rh/Fe(001) bilayers, but also establish their continuous link with chemical mechanisms underlying reversible α_lʹ ↔ αʺ transitions.

Magnetic response of FeRh to static and dynamic disorder

Atomic scale defects generated using focused ion as well as laser beams can activate ferromagnetism in initially non-ferromagnetic B2 ordered alloy thin film templates. Such defects can be induced locally, confining the ferromagnetic objects within well-defined nanoscale regions. The characterization of these atomic scale defects is challenging, and the mechanism for the emergence of ferromagnetism due to sensitive lattice disordering is unclear. Here we directly probe a variety of microscopic defects in systematically disordered B2 FeRh thin films that are initially antiferromagnetic and undergo a thermally-driven isostructural phase transition to a volatile ferromagnetic state. We show that the presence of static disorder i.e., the slight deviations of atoms from their equilibrium sites is sufficient to induce a non-volatile ferromagnetic state at room temperature. A static mean square relative displacement of 9 × 10-4 Å-2 is associated with the occurrence of non-volatile ferromagnetism and replicates a snapshot of the dynamic disorder observed in the thermally-driven ferromagnetic state. The equivalence of static and dynamic disorder with respect to the ferromagnetic behavior can provide insights into the emergence of ferromagnetic coupling as well as achieving tunable magnetic properties through defect manipulations in alloys.

Reversible, Electric-Field Induced Magneto-Ionic Control of Magnetism in Mesoporous Cobalt Ferrite Thin Films

The magnetic properties of mesoporous cobalt ferrite films can be largely tuned by the application of an electric field using a liquid dielectric electrolyte. By applying a negative voltage, the cobalt ferrite becomes reduced, leading to an increase in saturation magnetization of 15% (MS) and reduction in coercivity (HC) between 5-28%, depending on the voltage applied (-10 V to -50 V). These changes are mainly non-volatile so after removal of -10 V MS remains 12% higher (and HC 5% smaller) than the pristine sample. All changes can then be reversed with a positive voltage to recover the initial properties even after the application of -50 V. Similar studies were done on analogous films without induced porosity and the effects were much smaller, underscoring the importance of nanoporosity in our system. The different mechanisms possibly responsible for the observed effects are discussed and we conclude that our observations are compatible with voltage-driven oxygen migration (i.e., the magneto-ionic effect).

Voltage-Control of Magnetism in All-Solid-State and Solid/Liquid Magnetoelectric Composites

The control of magnetism by means of low-power electric fields, rather than dissipative flowing currents, has the potential to revolutionize conventional methods of data storage and processing, sensing, and actuation. A promising strategy relies on the utilization of magnetoelectric composites to finely tune the interplay between electric and magnetic degrees of freedom at the interface of two functional materials. Albeit early works predominantly focused on the magnetoelectric coupling at solid/solid interfaces; however, recently there has been an increased interest related to the opportunities offered by liquid-gating techniques. Here, a comparative overview on voltage control of magnetism in all-solid-state and solid/liquid composites is presented within the context of the principal coupling mediators, i.e., strain, charge carrier doping, and ionic intercalation. Further, an exhaustive and critical discussion is carried out, concerning the suitability of using the common definition of coupling coefficient α C = Δ M Δ E   to compare the strength of the interaction between electricity and magnetism among different magnetoelectric systems.

Disclosing odd symmetry, strain driven magnetic response of Co on Pt/PMN-PT (0 1 1)

An odd-symmetry magnetic response of multiferroic composites comprising ultrathin Co layers on Pt electrodes on [Pb(Mg_0.33Nb_0.67)O₃]_(1-x)[PbTiO₃] _x (PMN-PT) (0 1 1) piezoelectric substrates is observed upon electrical poling of the PMN-PT substrates: the magnetic easy axis of the Co rotates by 90° in-plane between oppositely poled ferroelectric states, mimicking the signature of a surface polarization charge driven effect, which however can be excluded from the presence of the thick Pt interlayer. The origin for this unexpected behavior is as an odd symmetry piezoelectric response of the PMN-PT substrate, as indicated by x-ray diffraction with applied poling, in combination with conventional magnetoelastic coupling. Ferroelectric characterization reveals corresponding features, possibly related to an unswitchable polarization component.

Large Magnetoelectric Effects in Electrodeposited Nanoporous Microdisks Driven by Effective Surface Charging and Magneto-Ionics

A synergetic approach to enhance magnetoelectric effects (i.e., control of magnetism with voltage) and improve energy efficiency in magnetically actuated devices is presented. The investigated material consists of an ordered array of Co-Pt microdisks, in which nanoporosity and partial oxidation are introduced during the synthetic procedure to synergetically boost the effects of electric field. The microdisks are grown by electrodeposition from an electrolyte containing an amphiphilic polymeric surfactant. The bath formulation is designed to favor the incorporation of oxygen in the form of cobalt oxide. A pronounced reduction of coercivity (88%) and a remarkable increase of Kerr signal amplitude (60%) are observed at room temperature upon subjecting the microdisks to negative voltages through an electrical double layer. These large voltage-induced changes in the magnetic properties of the microdisks are due to (i) the high surface-area-to-volume ratio with ultranarrow pore walls (sub-10 nm) that promote enhanced electric charge accumulation and (ii) magneto-ionic effects, where voltage-driven O^2- migration promotes a partial reduction of CoO to Co at room temperature. This simple and versatile procedure to fabricate patterned "nano-in-micro" magnetic motifs with adjustable voltage-driven magnetic properties is very appealing for energy-efficient magnetic recording systems and other magnetoelectronic devices.

Hidden Magnetic States Emergent Under Electric Field, In A Room Temperature Composite Magnetoelectric Multiferroic

The ability to control a magnetic phase with an electric field is of great current interest for a variety of low power electronics in which the magnetic state is used either for information storage or logic operations. Over the past several years, there has been a considerable amount of research on pathways to control the direction of magnetization with an electric field. More recently, an alternative pathway involving the change of the magnetic state (ferromagnet to antiferromagnet) has been proposed. In this paper, we demonstrate electric field control of the Anomalous Hall Transport in a metamagnetic FeRh thin film, accompanying an antiferromagnet (AFM) to ferromagnet (FM) phase transition. This approach provides us with a pathway to “hide” or “reveal” a given ferromagnetic region at zero magnetic field. By converting the AFM phase into the FM phase, the stray field, and hence sensitivity to external fields, is decreased or eliminated. Using detailed structural analyses of FeRh films of varying crystalline quality and chemical order, we relate the direct nanoscale origins of this memory effect to site disorder as well as variations of the net magnetic anisotropy of FM nuclei. Our work opens pathways toward a new generation of antiferromagnetic – ferromagnetic interactions for spintronics.