Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures

Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI₃/MnBi₂Te₄ ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration to be half-covered by CrI₃, the exchange bias becomes positive with a very large exchange bias field exceeding 300 mT. Such sensitive manipulation is explained by the competition between the FM and AFM coupling at the interface of CrI₃ and MnBi₂Te₄, pointing to coverage-dependent interfacial magnetic interactions. Our work will facilitate the development of topological and antiferromagnetic devices.

A Van der Waals Interface Hosting Two Groups of Magnetic Skyrmions

Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion-based ultrahigh-density spin memory devices. Extending the field to 2D van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g., thickness, twist angle, and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. In this work, a van der Waals interface, formed by two 2D ferromagnets Cr₂ Ge₂ Te₆ and Fe₃ GeTe₂ with a Curie temperature of ≈65 and ≈205 K, respectively, hosting two groups of magnetic skyrmions, is reported. Two sets of topological Hall effect signals are observed below 6s0 K when Cr₂ Ge₂ Te₆ is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy, and supported by micromagnetic simulations. Interestingly, the magnetic skyrmions persist in the heterostructure with zero applied magnetic field. The results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases.

Manipulating Exchange Bias in a Van der Waals Ferromagnet

Spintronics applications of thin-film magnets require control and design of specific magnetic properties. Exchange bias, originating from the pinning of spins in a ferromagnet by these of an antiferromagnet, is a part of the highly important elements for spintronics applications. Here, an exchange bias of ≈90 mT in a van der Waals ferromagnet encapsulated by two antiferromagnets at 5 K, the value of which is highly tunable by the field coolings, is reported. The non-antisymmetric dependence of exchange bias on field cooling is explained through considering an uncompensated interfacial magnetic layer of an antiferromagnet with a noncollinear spin texture, and a weak antiferromagnetic order in the oxidized layer, at two ferromagnet/antiferromagnet interfaces. This work opens up new routes toward designing and controlling 2D spintronic devices made of atomically thin van der Waals magnets.

Epitaxial growth of bilayer Bi(110) on two-dimensional ferromagnetic Fe3GeTe2

Heterostructures of two-dimensional (2D) layered materials with selective compositions play an important role in creating novel functionalities. Effective interface coupling between 2D ferromagnet and electronic materials would enable the generation of exotic physical phenomena caused by intrinsic symmetry breaking and proximity effect at interfaces. Here, epitaxial growth of bilayer Bi(110) on 2D ferromagnetic Fe₃GeTe₂(FGT) with large magnetic anisotropy has been reported. Bilayer Bi(110) islands are found to extend along fixed lattice directions of FGT. The six preferred orientations could be divided into two groups of three-fold symmetry axes with the difference approximately to 26°. Moreover, dI/dVmeasurements confirm the existence of interface coupling between bilayer Bi(110) and FGT. A variation of the energy gap at the edges of bilayer Bi(110) is also observed which is modulated by the interface coupling strengths associated with its buckled atomic structure. This system provides a good platform for further study of the exotic electronic properties of epitaxial Bi(110) on 2D ferromagnetic substrate and promotes potential applications in the field of spin devices.

Enhancing Delta E Effect at High Temperatures of Galfenol/Ti/Single-Crystal Diamond Resonators for Magnetic Sensing

A conventional wisdom is that the sensing properties of magnetic sensors at high temperatures will be degraded due to the materials' deterioration. Here, the concept of high-temperature enhancing magnetic sensing is proposed based on the hybrid structure of SCD MEMS resonator functionalized with a high thermal-stable ferromagnetic galfenol (FeGa) film. The delta E effect of the magnetostrictive FeGa thin film on Ti/SCD cantilevers is investigated by varying the operating temperature from 300 to 773 K upon external magnetic fields. The multilayer structure magnetic sensor presents a high sensitivity of 71.1 Hz/mT and a low noise level of 10 nT/√Hz at 773 K for frequencies higher than 7.5 kHz. The high-temperature magnetic sensing performance exceeds those of the reported magnetic sensors. Furthermore, an anomalous behavior is observed on the delta E effect, which exhibits a positive temperature dependence with the law of Tⁿ. Based on the resonance frequency shift of the FeGa/Ti/SCD cantilever, the strain coupling in the multilayers of the FeGa/Ti/SCD structure under a magnetic field is strengthened with increasing temperature. The delta E effect shows a strong relationship with the azimuthal angle, θ, as a sine function at 300 and 773 K. This work provides a strategy to develop magnetic sensors for high-temperature applications with performance superior to that of the present ones.

A Dual-Gate MoS2 Photodetector Based on Interface Coupling Effect

2D transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS₂ photodetectors function under the photogating effect originated from the charge-trap mechanism, which is difficult for quantitative control. Such devices generally suffer from a poor compromise between response speed and responsivity (R) and large dark current. Here, a dual-gated (DG) MoS₂ phototransistor operating based on the interface coupling effect (ICE) is demonstrated. By simultaneously applying a negative top-gate voltage (V_TG ) and positive back-gate voltage (V_BG ) to the MoS₂ channel, the photogenerated holes can be effectively trapped in the depleted region under TG. An ultrahigh R of ≈10⁵ A W^-1 and detectivity (D*) of ≈10¹⁴ Jones are achieved in several devices with different thickness under P_in of 53 µW cm^-2 at V_TG = -5 V. Moreover, the response time of the DG phototransistor can also be modulated based on the ICE. Based on these systematic measurements of MoS₂ DG phototransistors, the results show that the ICE plays an important role in the modulation of photoelectric performances. The results also pave the way for the future optoelectrical application of 2D TMDs materials and prompt for further investigation in the DG structured phototransistors.

Emergent Topological Hall Effect in La0.7Sr0.3MnO3/SrIrO3 Heterostructures

Recently, perovskite oxide heterostructures have drawn great attention because multiple and complex coupling at the heterointerface may produce novel magnetic and electric phenomena that are not expected in homogeneous materials either in the bulk or in films. In this work, we report for the first time that an emergent giant topological Hall effect (THE), associated with a noncoplanar (NC) spin texture, can be induced in ferromagnetic (FM) La_0.7Sr_0.3MnO₃ thin films in a wide temperature range of up to 200 K by constructing La_0.7Sr_0.3MnO₃/SrIrO₃ epitaxial heterostructures on (001) SrTiO₃ substrates. This THE is not observed in La_0.7Sr_0.3MnO₃ single-layer films or La_0.7Sr_0.3MnO₃/SrTiO₃/SrIrO₃ trilayer heterostructures, indicating the relevance of the La_0.7Sr_0.3MnO₃/SrIrO₃ interface, where the Dzyaloshinskii-Moriya interaction due to strong spin-orbital coupling in SrIrO₃ may play a crucial role. The fictitious field associated with THE is independent of temperature in La_0.7Sr_0.3MnO₃/SrIrO₃ heterostructures, suggesting that the NC spin texture may be magnetic skyrmions. This work demonstrates the feasibility of using SrIrO₃ to generate novel magnetic and transport characteristics by interfacing with other correlated oxides, which might be useful to novel spintronic applications.

Voltage-Control of Magnetism in All-Solid-State and Solid/Liquid Magnetoelectric Composites

The control of magnetism by means of low-power electric fields, rather than dissipative flowing currents, has the potential to revolutionize conventional methods of data storage and processing, sensing, and actuation. A promising strategy relies on the utilization of magnetoelectric composites to finely tune the interplay between electric and magnetic degrees of freedom at the interface of two functional materials. Albeit early works predominantly focused on the magnetoelectric coupling at solid/solid interfaces; however, recently there has been an increased interest related to the opportunities offered by liquid-gating techniques. Here, a comparative overview on voltage control of magnetism in all-solid-state and solid/liquid composites is presented within the context of the principal coupling mediators, i.e., strain, charge carrier doping, and ionic intercalation. Further, an exhaustive and critical discussion is carried out, concerning the suitability of using the common definition of coupling coefficient α C = Δ M Δ E   to compare the strength of the interaction between electricity and magnetism among different magnetoelectric systems.

Polarization Rotation in Ultrathin Ferroelectrics Tailored by Interfacial Oxygen Octahedral Coupling

Multiple polar states and giant piezoelectric responses could be driven by polarization rotation in ferroelectric films, which have potential functionalities in modern material applications. Although theoretical calculations have predicted polarization rotation in pure PbTiO₃ films without domain walls and strains, direct experiment has rarely confirmed such polar states under this condition. Here, we observed that interfacial oxygen octahedral coupling (OOC) can introduce an oxygen octahedral rotation, which induces polarization rotation in single domain PbTiO₃ films with negligible strains. We have grown ultrathin PbTiO₃ films (3.2 nm) on both SrTiO₃ and Nb:SrTiO₃ substrates and applied aberration-corrected scanning transmission electron microscopy (STEM) to study the interfacial OOC effect. Atomic mappings unit cell by unit cell demonstrate that polarization rotation occurs in PbTiO₃ films on both substrates. The distortion of oxygen octahedra in PbTiO₃ is proven by annular bright-field STEM. The critical thickness for this polarization rotation is about 4 nm (10 unit cells), above which polarization rotation disappears. First-principles calculations manifest that the interfacial OOC is responsible for the polarization rotation state. These results may shed light on further understanding the polarization behavior in ultrathin ferroelectrics and be helpful to develop relevant devices as polarization rotation is known to be closely related to superior electromechanical responses.

Interface Coupling in Twisted Multilayer Graphene by Resonant Raman Spectroscopy of Layer Breathing Modes

Raman spectroscopy is the prime nondestructive characterization tool for graphene and related layered materials. The shear (C) and layer breathing modes (LBMs) are due to relative motions of the planes, either perpendicular or parallel to their normal. This allows one to directly probe the interlayer interactions in multilayer samples. Graphene and other two-dimensional (2d) crystals can be combined to form various hybrids and heterostructures, creating materials on demand with properties determined by the interlayer interaction. This is the case even for a single material, where multilayer stacks with different relative orientations have different optical and electronic properties. In twisted multilayer graphene there is a significant enhancement of the C modes due to resonance with new optically allowed electronic transitions, determined by the relative orientation of the layers. Here we show that this applies also to the LBMs, which can be now directly measured at room temperature. We find that twisting has a small effect on LBMs, quite different from the case of the C modes. This implies that the periodicity mismatch between two twisted layers mostly affects shear interactions. Our work shows that ultralow-frequency Raman spectroscopy is an ideal tool to uncover the interface coupling of 2d hybrids and heterostructures.