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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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2
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Kang Y, Pei Y, He D, Xu H, Ma M, Yan J, Jiang C, Li W, Xiao X. Spatially selective p-type doping for constructing lateral WS 2 p-n homojunction via low-energy nitrogen ion implantation. LIGHT, SCIENCE & APPLICATIONS 2024; 13:127. [PMID: 38821920 PMCID: PMC11143290 DOI: 10.1038/s41377-024-01477-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 04/13/2024] [Accepted: 05/10/2024] [Indexed: 06/02/2024]
Abstract
The construction of lateral p-n junctions is very important and challenging in two-dimensional (2D) semiconductor manufacturing process. Previous researches have demonstrated that vertical p-n junction can be prepared simply by vertical stacking of 2D materials. However, interface pollution and large area scalability are challenges that are difficult to overcome with vertical stacking technology. Constructing 2D lateral p-n homojunction is an effective strategy to address these issues. Spatially selective p-type doping of 2D semiconductors is expected to construct lateral p-n homojunction. In this work, we have developed a low-energy ion implantation system that reduces the implanted energy to 300 eV. Low-energy implantation can form a shallow implantation depth, which is more suitable for modulating the electrical and optical properties of 2D materials. Hence, we utilize low-energy ion implantation to directly dope nitrogen ions into few-layer WS2 and successfully realize a precise regulation for WS2 with its conductivity type transforming from n-type to bipolar or even p-type conduction. Furthermore, the universality of this method is demonstrated by extending it to other 2D semiconductors, including WSe2, SnS2 and MoS2. Based on this method, a lateral WS2 p-n homojunction is fabricated, which exhibits significant rectification characteristics. A photodetector based on p-n junction with photovoltaic effect is also prepared, and the open circuit voltage can reach to 0.39 V. This work provides an effective way for controllable doping of 2D semiconductors.
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Affiliation(s)
- Yufan Kang
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Yongfeng Pei
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Dong He
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Hang Xu
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Mingjun Ma
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Jialu Yan
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Changzhong Jiang
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Wenqing Li
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China.
| | - Xiangheng Xiao
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China.
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3
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Bianchi MG, Risplendi F, Re Fiorentin M, Cicero G. Engineering the Electrical and Optical Properties of WS 2 Monolayers via Defect Control. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305162. [PMID: 38009517 PMCID: PMC10811516 DOI: 10.1002/advs.202305162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2023] [Revised: 09/25/2023] [Indexed: 11/29/2023]
Abstract
Two-dimensional (2D) materials as tungsten disulphide (WS2 ) are rising as the ideal platform for the next generation of nanoscale devices due to the excellent electric-transport and optical properties. However, the presence of defects in the as grown samples represents one of the main limiting factors for commercial applications. At the same time, WS2 properties are frequently tailored by introducing impurities at specific sites. Aim of this review paper is to present a complete description and discussion of the effects of both intentional and unintentional defects in WS2 , by an in depth analysis of the recent experimental and theoretical investigations reported in the literature. First, the most frequent intrinsic defects in WS2 are presented and their effects in the readily synthetized material are discussed. Possible solutions to remove and heal unintentional defects are also analyzed. Following, different doping schemes are reported, including the traditional substitution approach and innovative techniques based on the surface charge transfer with adsorbed atoms or molecules. The plethora of WS2 monolayer modifications presented in this review and the systematic analysis of the corresponding optical and electronic properties, represent strategic degrees of freedom the researchers may exploit to tailor WS2 optical and electronic properties for specific device applications.
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Affiliation(s)
- Michele Giovanni Bianchi
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Francesca Risplendi
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Michele Re Fiorentin
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Giancarlo Cicero
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
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4
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Das AK, Biswas S, Kayal A, Reber AC, Bhandary S, Chopra D, Mitra J, Khanna SN, Mandal S. Two-Dimensional Silver-Chalcogenolate-Based Cluster-Assembled Material: A p-type Semiconductor. NANO LETTERS 2023; 23:8923-8931. [PMID: 37725097 DOI: 10.1021/acs.nanolett.3c02269] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/21/2023]
Abstract
We have synthesized and characterized a new two-dimensional honeycomb architecture resembling a single-layer of atomically precise silver cluster-assembled material (CAM), [Ag12(StBu)6(CF3COO)6(4,4'-azopyridine)3] (Ag12-azo-bpy). The interlayer noncovalent van der Waals interactions within the single-crystals were successfully disrupted, leading to the creation of this unique structure. The optimized Ag12-azo-bpy CAM demonstrates a valence band that is localized on the Ag12 cluster node situated near the Fermi energy level. This localization induces electron injection from the linker to the cluster node, facilitating efficient charge transportation along the plane. Exploiting this single-layer structure as a distinctive platform for p-type channel material, it was employed in a field-effect transistor configuration. Remarkably, the transistor exhibits a high hole mobility of 1.215 cm2 V-1 s-1 and an impressive ON/OFF current ratio of ∼4500 at room-temperature.
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Affiliation(s)
- Anish Kumar Das
- School of Chemistry, Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram, Kerala 695551, India
| | - Sourav Biswas
- School of Chemistry, Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram, Kerala 695551, India
| | - Arijit Kayal
- School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram, Kerala 695551, India
| | - Arthur C Reber
- Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23220, United States
| | - Subhrajyoti Bhandary
- School of Chemistry, Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram, Kerala 695551, India
| | - Deepak Chopra
- Department of Chemistry, Indian Institute of Science Education and Research Bhopal, Madhya Pradesh 462066, India
| | - Joy Mitra
- School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram, Kerala 695551, India
| | - Shiv N Khanna
- Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23220, United States
| | - Sukhendu Mandal
- School of Chemistry, Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram, Kerala 695551, India
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5
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Ji C, Chang YH, Huang CS, Huang BR, Chen YT. Controllable Doping Characteristics for WS xSe y Monolayers Based on the Tunable S/Se Ratio. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2107. [PMID: 37513118 PMCID: PMC10385163 DOI: 10.3390/nano13142107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Revised: 07/10/2023] [Accepted: 07/13/2023] [Indexed: 07/30/2023]
Abstract
Transition metal dichalcogenides (TMDs) have attracted much attention because of their unique characteristics and potential applications in electronic devices. Recent reports have successfully demonstrated the growth of 2-dimensional MoSxSey, MoxWyS2, MoxWySe2, and WSxSey monolayers that exhibit tunable band gap energies. However, few works have examined the doping behavior of those 2D monolayers. This study synthesizes WSxSey monolayers using the CVD process, in which different heating temperatures are applied to sulfur powders to control the ratio of S to Se in WSxSey. Increasing the Se component in WSxSey monolayers produced an apparent electronic state transformation from p-type to n-type, recorded through energy band diagrams. Simultaneously, p-type characteristics gradually became clear as the S component was enhanced in WSxSey monolayers. In addition, Raman spectra showed a red shift of the WS2-related peaks, indicating n-doping behavior in the WSxSey monolayers. In contrast, with the increase of the sulfur component, the blue shift of the WSe2-related peaks in the Raman spectra involved the p-doping behavior of WSxSey monolayers. In addition, the optical band gap of the as-grown WSxSey monolayers from 1.97 eV to 1.61 eV is precisely tunable via the different chalcogenide heating temperatures. The results regarding the doping characteristics of WSxSey monolayers provide more options in electronic and optical design.
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Affiliation(s)
- Chen Ji
- Graduate Institute of Electro-Optical Engineering, Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 106335, Taiwan
| | - Yung-Huang Chang
- Bachelor Program in Industrial Technology, National Yunlin University of Science and Technology, Douliu 64002, Yunlin, Taiwan
| | - Chien-Sheng Huang
- Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliu 64002, Yunlin, Taiwan
| | - Bohr-Ran Huang
- Graduate Institute of Electro-Optical Engineering, Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 106335, Taiwan
| | - Yuan-Tsung Chen
- Graduate School of Materials Science, National Yunlin University of Science and Technology, Douliu 64002, Yunlin, Taiwan
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6
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Araujo FDV, Silva FWN, Zhang T, Zhou C, Lin Z, Perea-Lopez N, Rodrigues SF, Terrones M, Souza Filho AG, Alencar RS, Viana BC. Substrate-Induced Changes on the Optical Properties of Single-Layer WS 2. MATERIALS (BASEL, SWITZERLAND) 2023; 16:2591. [PMID: 37048884 PMCID: PMC10095963 DOI: 10.3390/ma16072591] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/16/2023] [Revised: 03/16/2023] [Accepted: 03/17/2023] [Indexed: 06/19/2023]
Abstract
Among the most studied semiconducting transition metal dichalcogenides (TMDCs), WS2 showed several advantages in comparison to their counterparts, such as a higher quantum yield, which is an important feature for quantum emission and lasing purposes. We studied transferred monolayers of WS2 on a drilled Si3N4 substrate in order to have insights about on how such heterostructure behaves from the Raman and photoluminescence (PL) measurements point of view. Our experimental findings showed that the Si3N4 substrate influences the optical properties of single-layer WS2. Beyond that, seeking to shed light on the causes of the PL quenching observed experimentally, we developed density functional theory (DFT) based calculations to study the thermodynamic stability of the heterojunction through quantum molecular dynamics (QMD) simulations as well as the electronic alignment of the energy levels in both materials. Our analysis showed that along with strain, a charge transfer mechanism plays an important role for the PL decrease.
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Affiliation(s)
- F. D. V. Araujo
- Instituto Federal de Educação, Ciência e Tecnologia do Piauí-Campus Campo Maior, Avenida Raimundo Doca da Silva, S/N-Fazendinha, Campo Maior 64280-000, Piauí, Brazil
- LIMAV—Laboratório Interdisciplinar de Materiais Avançados, Programa de Pós-Graduação em Engenharia e Ciência dos Materiais (PPGCM), Universidade Federal do Piauí, Teresina 64049-550, Piauí, Brazil
| | - F. W. N. Silva
- Instituto Federal de Educação, Ciência e Tecnologia do Maranhão-Campus Alcântara, Alcântara 65250-000, Maranhão, Brazil
- Programa de Pós-Graduação em Engenharia de Materiais (PPGEM), Instituto Federal de Educação, Ciência e Tecnologia do Maranhão-Campus Monte Castelo, Avenida Getúlio Vargas, Nº 04, São Luís 65030-005, Maranhão, Brazil
| | - T. Zhang
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - C. Zhou
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - Zhong Lin
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - Nestor Perea-Lopez
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - Samuel F. Rodrigues
- LIMAV—Laboratório Interdisciplinar de Materiais Avançados, Programa de Pós-Graduação em Engenharia e Ciência dos Materiais (PPGCM), Universidade Federal do Piauí, Teresina 64049-550, Piauí, Brazil
- Programa de Pós-Graduação em Engenharia de Materiais (PPGEM), Instituto Federal de Educação, Ciência e Tecnologia do Maranhão-Campus Monte Castelo, Avenida Getúlio Vargas, Nº 04, São Luís 65030-005, Maranhão, Brazil
| | - Mauricio Terrones
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | | | - R. S. Alencar
- Faculdade de Física, Universidade Federal do Pará, Belém 66075-110, Pará, Brazil
| | - Bartolomeu C. Viana
- LIMAV—Laboratório Interdisciplinar de Materiais Avançados, Programa de Pós-Graduação em Engenharia e Ciência dos Materiais (PPGCM), Universidade Federal do Piauí, Teresina 64049-550, Piauí, Brazil
- Departamento de Física, Campus Ministro Petrônio Portella, Universidade Federal do Piauí, Teresina 64049-550, Piauí, Brazil
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7
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Xie J, Meng G, Chen B, Li Z, Yin Z, Cheng Y. Vapor-Liquid-Solid Growth of Morphology-Tailorable WS 2 toward P-Type Monolayer Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:45716-45724. [PMID: 36183271 DOI: 10.1021/acsami.2c13812] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Although substantial efforts have been made, controllable synthesis of p-type WS2 remains a challenge. In this work, we employ NaCl as a seeding promoter to realize vapor-liquid-solid (VLS) growth of p-type WS2. Morphological evolution, including a one-dimensional (1D) nanowire to two-dimensional (2D) planar domain and 2D shape transition of WS2 domains, can be well-controlled by the growth temperature and sulfur introduction time. A high growth temperature is required to enable planar growth of 2D WS2, and a sulfur-rich environment is found to facilitate the growth of high-quality WS2. Raman and photoluminescence (PL) mappings demonstrate uniform crystallinity and high quantum efficiency of VLS-grown WS2. Moreover, monolayer WS2-based field-effect transistors (FETs) are fabricated, showing p-type conducting behavior, which is different from previous reported n-type FETs from WS2 grown by other methods. First-principles calculations show that the p-type behavior originates from the substitution of Na at the W site, which will form an additional acceptor level above the valence band maximum (VBM). This facile VLS growth method opens the avenue to realize the p-n WS2 homojunctions and p/n-WS2-based heterojunctions for monolayer wearable electronic, photonic, optoelectronic, and biosensing devices and should also be a great benefit to the development of 2D complementary metal-oxide-semiconductor (CMOS) circuit applications.
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Affiliation(s)
- Jinan Xie
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
| | - Guodong Meng
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
| | - Baiyi Chen
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
| | - Zhe Li
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
| | - Zongyou Yin
- Research School of Chemistry, The Australian National University, Canberra, Australian Capital Territory2601, Australia
| | - Yonghong Cheng
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
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8
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Qian Q, Wu W, Peng L, Wang Y, Tan AMZ, Liang L, Hus SM, Wang K, Choudhury TH, Redwing JM, Puretzky AA, Geohegan DB, Hennig RG, Ma X, Huang S. Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide. ACS NANO 2022; 16:7428-7437. [PMID: 35536919 DOI: 10.1021/acsnano.1c09809] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The electronic and optical properties of two-dimensional materials can be strongly influenced by defects, some of which can find significant implementations, such as controllable doping, prolonged valley lifetime, and single-photon emissions. In this work, we demonstrate that defects created by remote N2 plasma exposure in single-layer WS2 can induce a distinct low-energy photoluminescence (PL) peak at 1.59 eV, which is in sharp contrast to that caused by remote Ar plasma. This PL peak has a critical requirement on the N2 plasma exposure dose, which is strongest for WS2 with about 2.0% sulfur deficiencies (including substitutions and vacancies) and vanishes at 5.6% or higher sulfur deficiencies. Both experiments and first-principles calculations suggest that this 1.59 eV PL peak is caused by defects related to the sulfur substitutions by nitrogen, even though low-temperature PL measurements also reveal that not all the sulfur vacancies are remedied by the substitutional nitrogen. The distinct low-energy PL peak suggests that the substitutional nitrogen defect in single-layer WS2 can potentially serve as an isolated artificial atom for creating single-photon emitters, and its intensity can also be used to monitor the doping concentrations of substitutional nitrogen.
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Affiliation(s)
- Qingkai Qian
- Key Laboratory of Optoelectronic Technology and System (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Wenjing Wu
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Lintao Peng
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Yuanxi Wang
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Anne Marie Z Tan
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Saban M Hus
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tanushree H Choudhury
- 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joan M Redwing
- 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Richard G Hennig
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States
| | - Xuedan Ma
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Shengxi Huang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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9
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Kim Y, Woo WJ, Kim D, Lee S, Chung SM, Park J, Kim H. Atomic-Layer-Deposition-Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005907. [PMID: 33749055 DOI: 10.1002/adma.202005907] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2020] [Revised: 10/16/2020] [Indexed: 06/12/2023]
Abstract
Transition metal chalcogenides (TMCs) are a large family of 2D materials with different properties, and are promising candidates for a wide range of applications such as nanoelectronics, sensors, energy conversion, and energy storage. In the research of new materials, the development and investigation of industry-compatible synthesis techniques is of key importance. In this respect, it is important to study 2D TMC materials synthesized by the atomic layer deposition (ALD) technique, which is widely applied in industries. In addition to the synthesis of 2D TMCs, ALD is used to modulate the characteristic of 2D TMCs such as their carrier density and morphology. So far, the improvement of thin film uniformity without oxidation and the synthesis of low-dimensional nanomaterials on 2D TMCs have been the research focus. Herein, the synthesis and modulation of 2D TMCs by ALD is described, and the characteristics of ALD-based TMCs used in nanoelectronics, sensors, and energy applications are discussed.
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Affiliation(s)
- Youngjun Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
| | - Whang Je Woo
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
| | - Donghyun Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
| | - Sangyoon Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
| | - Seung-Min Chung
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
| | - Jusang Park
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
| | - Hyungjun Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
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10
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Sun J, Zhuang X, Fan Y, Guo S, Cheng Z, Liu D, Yin Y, Tian Y, Pang Z, Wei Z, Song X, Liao L, Chen F, Ho JC, Yang ZX. Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102323. [PMID: 34288454 DOI: 10.1002/smll.202102323] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2021] [Revised: 06/27/2021] [Indexed: 06/13/2023]
Abstract
The relative low hole mobility of p-channel building block device challenges the continued miniaturization of modern electronic chips. Metal-semiconductor junction is always an efficient strategy to control the carrier concentration of channel semiconductor, benefiting the carrier mobility regulation of building block device. In this work, complementary metal oxide semiconductor (CMOS)-compatible metals are selected to deposit on the surface of the important p-channel building block of GaSb nanowire field-effect-transistors (NWFETs), demonstrating the efficient strategy of hole mobility enhancement by metal-semiconductor junction. When deposited with lower work function metal of Al, the peak hole mobility of GaSb NWFET can be enhanced to as high as ≈3372 cm2 V-1 s-1 , showing three times than the un-deposited one. The as-studied metal-semiconductor junction is also efficient for the hole mobility enhancement of other p-channel devices, such as GaAs NWFET, GaAs film FET, and WSe2 FET. With the enhanced mobility, the as-constructed CMOS inverter shows good invert characteristics, showing a relatively high gain of ≈18.1. All results may be regarded as important advances to the next-generation electronics.
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Affiliation(s)
- Jiamin Sun
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Xinming Zhuang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yibo Fan
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Shuai Guo
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China
| | - Zichao Cheng
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Dong Liu
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Yanxue Yin
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yufeng Tian
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Zhiyong Pang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China
| | - Xiufeng Song
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Feng Chen
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zai-Xing Yang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
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11
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Gu Z, Zhang T, Luo J, Wang Y, Liu H, Chen L, Liu X, Yu W, Zhu H, Sun QQ, Zhang DW. MoS 2-on-AlN Enables High-Performance MoS 2 Field-Effect Transistors through Strain Engineering. ACS APPLIED MATERIALS & INTERFACES 2020; 12:54972-54979. [PMID: 33253522 DOI: 10.1021/acsami.0c16079] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Molybdenum disulfide (MoS2) has substantial application prospects in the field of electronic devices. The fabrication of devices of excellent quality based on MoS2 films is an important research direction. In this study, based on the atomic layer deposition technique, large-area MoS2 films were grown, and top-gate MoS2-based field-effect transistor arrays were fabricated on four substrates (AlN, GaN, sapphire, and SiO2). It was found that the interface defects that were introduced by lattice mismatch and roughness of the growth substrate could cause an exponential (102) drop in mobility. Because of the small lattice mismatch and excellent surface quality, transistors on the AlN substrate have shown an enhanced mobility (10.45 cm2 V-1 s-1) compared to transistors on the other substrates. This study proves that the AlN substrate is a superior substrate for large-area and high-performance MoS2 film synthesis. This result can also be applied in higher-level microelectronic systems, such as in digital logic circuit design.
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Affiliation(s)
- Zhenghao Gu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Tianbao Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Jiangliu Luo
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Yang Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Hao Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Lin Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Xinke Liu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore
| | - Wenjie Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai 200050, People's Republic of China
| | - Hao Zhu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Qing-Qing Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
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12
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Liu M, Wei S, Shahi S, Jaiswal HN, Paletti P, Fathipour S, Remškar M, Jiao J, Hwang W, Yao F, Li H. Enhanced carrier transport by transition metal doping in WS 2 field effect transistors. NANOSCALE 2020; 12:17253-17264. [PMID: 32329484 DOI: 10.1039/d0nr01573c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a "generalized" Cu doping by using randomly distributed Cu atoms along the channel and (ii) a "localized" Cu doping by adapting an ultrathin Cu layer at the metal-semiconductor interface. Compared to the pristine WS2 FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1-3 orders of magnitude, and consequently elevate electron mobilities by 5-7 times. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs.
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Affiliation(s)
- Maomao Liu
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA.
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13
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Lan C, Shi Z, Cao R, Li C, Zhang H. 2D materials beyond graphene toward Si integrated infrared optoelectronic devices. NANOSCALE 2020; 12:11784-11807. [PMID: 32462161 DOI: 10.1039/d0nr02574g] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.
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Affiliation(s)
- Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
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14
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Han S, Boguschewski C, Gao Y, Xiao L, Zhu J, van Loosdrecht PHM. Incoherent phonon population and exciton-exciton annihilation dynamics in monolayer WS 2 revealed by time-resolved Resonance Raman scattering. OPTICS EXPRESS 2019; 27:29949-29961. [PMID: 31684250 DOI: 10.1364/oe.27.029949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2019] [Accepted: 08/18/2019] [Indexed: 06/10/2023]
Abstract
Atomically thin layer transition metal dichalcogenides have been intensively investigated for their rich optical properties and potential applications on nano-electronics. In this work, we study the incoherent phonon and exciton population dynamics in monolayer WS2 by time-resolved Resonance Raman scattering spectroscopy. Upon excitation of the exciton transition, both Stokes and anti-Stokes scattering strength of the optical and the longitudinal acoustic two phonon modes exhibit large reduction. Based on the assumption of quasi-equilibrium distribution, the hidden phonon population dynamics is retrieved, which shows an instant build-up and a relaxation lifetime of ∼4 ps at the exciton density ∼1012cm-2. A phonon temperature rises of ∼20 K was identified due to the exciton excitation and relaxation. The exciton relaxation dynamics extracted from the transient vibrational Raman response shows strong excitation density dependence, signaling an important bi-molecular contribution to the decay. These results provide significant knowledge on the thermal dynamics after optical excitation, enhance the understanding of the fundamental exciton dynamics in two-dimensional transition metal materials, and demonstrate that time-resolved Resonance Raman scattering spectroscopy is a powerful method for exploring quasi-particle dynamics in optical materials.
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15
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Sun J, Peng M, Zhang Y, Zhang L, Peng R, Miao C, Liu D, Han M, Feng R, Ma Y, Dai Y, He L, Shan C, Pan A, Hu W, Yang ZX. Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors. NANO LETTERS 2019; 19:5920-5929. [PMID: 31374165 DOI: 10.1021/acs.nanolett.9b01503] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Owing to the relatively low hole mobility, the development of GaSb nanowire (NW) electronic and photoelectronic devices has stagnated in the past decade. During a typical catalyst-assisted chemical vapor deposition (CVD) process, the adopted metallic catalyst can be incorporated into the NW body to act as a slight dopant, thus regulating the electrical properties of the NW. In this work, we demonstrate the use of Sn as a catalyst and dopant for GaSb NWs in the surfactant-assisted CVD growth process. The Sn-catalyzed zinc-blende GaSb NWs are thin, long, and straight with good crystallinity, resulting in a record peak hole mobility of 1028 cm2 V-1 s-1. This high mobility is attributed to the slight doping of Sn atoms from the catalyst tip into the NW body, which is verified by the red-shifted photoluminescence peak of Sn-catalyzed GaSb NWs (0.69 eV) compared with that of Au-catalyzed NWs (0.74 eV). Furthermore, the parallel array NWs also show a high peak hole mobility of 170 cm2 V-1 s-1, a high responsivity of 61 A W-1, and fast rise and decay times of 195.1 and 380.4 μs, respectively, under the illumination of 1550 nm infrared light. All of the results demonstrate that the as-prepared Sn-catalyzed GaSb NWs are promising for application in next-generation electronics and optoelectronics.
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Affiliation(s)
- Jiamin Sun
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
- Shenzhen Research Institute of Shandong University , Shenzhen 518057 , P. R. China
| | - Meng Peng
- State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , P. R. China
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Yushuang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering , Hunan University , Changsha 410082 , P. R. China
| | - Lei Zhang
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System , Southeast University , Nanjing 210096 , P. R. China
| | - Rui Peng
- School of Physics , Shandong University , Jinan 250100 , P. R. China
| | - Chengcheng Miao
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
| | - Dong Liu
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
| | - Mingming Han
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
- Shenzhen Research Institute of Shandong University , Shenzhen 518057 , P. R. China
| | - Runfa Feng
- School of Physics , Shandong University , Jinan 250100 , P. R. China
| | - Yandong Ma
- School of Physics , Shandong University , Jinan 250100 , P. R. China
| | - Ying Dai
- School of Physics , Shandong University , Jinan 250100 , P. R. China
| | - Longbing He
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System , Southeast University , Nanjing 210096 , P. R. China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering , Zhengzhou University , Zhengzhou 450001 , China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering , Hunan University , Changsha 410082 , P. R. China
| | - Weida Hu
- State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , P. R. China
| | - Zai-Xing Yang
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
- Shenzhen Research Institute of Shandong University , Shenzhen 518057 , P. R. China
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16
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Lee E, Yoon YS, Kim DJ. Two-Dimensional Transition Metal Dichalcogenides and Metal Oxide Hybrids for Gas Sensing. ACS Sens 2018; 3:2045-2060. [PMID: 30270624 DOI: 10.1021/acssensors.8b01077] [Citation(s) in RCA: 142] [Impact Index Per Article: 23.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
Two-dimensional (2D) nanomaterials have demonstrated great potential in the field of gas sensing due to their layered structures. Especially for 2D transition metal dichalcogenides (TMDs), inherent high surface areas and their unique semiconducting properties with tunable band gaps make them compelling for sensing applications. In combination with the general benefits of 2D nanomaterials, the incorporation of metal oxides into 2D TMDs is a recent approach for improving the gas sensing performance of these materials by the synergistic effects of the hybridization. This Review aims to comprehend the sensing mechanisms and the synergistic effects of various hybridizations of 2D TMDs and metal oxides. The Review begins with the gas sensing mechanisms and synthesis methods of 2D TMDs. Achievements in recent research on 2D TMDs and their metal oxide hybrids for sensor applications are then comprehensively compiled. To clearly understand the collective benefits of TMDs and metal oxide hybrids, the hybridization effects are discussed in three aspects: geometrical, electronic, and chemical effects.
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Affiliation(s)
- Eunji Lee
- Materials Research and Education Center, Auburn University, Auburn, Alabama 36849, United States
| | - Young Soo Yoon
- Department of Chemical and Biological Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Dong-Joo Kim
- Materials Research and Education Center, Auburn University, Auburn, Alabama 36849, United States
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17
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Tang B, Yu ZG, Huang L, Chai J, Wong SL, Deng J, Yang W, Gong H, Wang S, Ang KW, Zhang YW, Chi D. Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS 2 Field-Effect Transistors by Atomic Nitrogen Treatment. ACS NANO 2018; 12:2506-2513. [PMID: 29505235 DOI: 10.1021/acsnano.7b08261] [Citation(s) in RCA: 48] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
We present a method for substitutional p-type doping in monolayer (1L) and few-layer (FL) WS2 using highly reactive nitrogen atoms. We demonstrate that the nitrogen-induced lattice distortion in atomically thin WS2 is negligible due to its low kinetic energy. The electrical characteristics of 1L/FL WS2 field-effect transistors (FETs) clearly show an n-channel to p-channel conversion with nitrogen incorporation. We investigate the defect formation energy and the origin of p-type conduction using first-principles calculations. We reveal that a defect state appears near the Fermi level, leading to a shallow acceptor level at 0.24 eV above the valence band maximum in nitrogen-doped 1L/FL WS2. This doping strategy enables a substitutional p-type doping in intrinsically n-type 1L/FL transition metal dichalcogenides (TMDCs) with tunable control of dopants, offering a method for realizing complementary metal-oxide-semiconductor FETs and optoelectronic devices on 1L/FL TMDCs by overcoming one of the major limits of TMDCs, that is, their n-type unipolar conduction.
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Affiliation(s)
- Baoshan Tang
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way , Innovis, 138634 Singapore
- Department of Materials Science and Engineering , National University of Singapore , 117576 Singapore
| | - Zhi Gen Yu
- Institute of High Performance Computing , A*STAR (Agency for Science, Technology and Research) , 1 Fusionopolis Way , Connexis North, 138632 Singapore
| | - Li Huang
- Department of Electrical and Computer Engineering , National University of Singapore , 117576 Singapore
| | - Jianwei Chai
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way , Innovis, 138634 Singapore
| | - Swee Liang Wong
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way , Innovis, 138634 Singapore
| | - Jie Deng
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way , Innovis, 138634 Singapore
| | - Weifeng Yang
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way , Innovis, 138634 Singapore
| | - Hao Gong
- Department of Materials Science and Engineering , National University of Singapore , 117576 Singapore
| | - Shijie Wang
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way , Innovis, 138634 Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering , National University of Singapore , 117576 Singapore
| | - Yong-Wei Zhang
- Institute of High Performance Computing , A*STAR (Agency for Science, Technology and Research) , 1 Fusionopolis Way , Connexis North, 138632 Singapore
| | - Dongzhi Chi
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way , Innovis, 138634 Singapore
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