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For: Na JW, Rim YS, Kim HJ, Lee JH, Hong S, Kim HJ. Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process. ACS Appl Mater Interfaces 2017;9:29849-29856. [PMID: 28812360 DOI: 10.1021/acsami.7b06643] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Number Cited by Other Article(s)
1
Lee WJ, Choi JG, Sung S, Kim CH, Na S, Joo YC, Park S, Yoon MH. Rapid and Reliable Formation of Highly Densified Bilayer Oxide Dielectrics on Silicon Substrates via DUV Photoactivation for Low-Voltage Solution-Processed Oxide Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2021;13:2820-2828. [PMID: 33405507 DOI: 10.1021/acsami.0c18118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
2
Jeon SP, Heo JS, Kim I, Kim YH, Park SK. Enhanced Interfacial Integrity of Amorphous Oxide Thin-Film Transistors by Elemental Diffusion of Ternary Oxide Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2020;12:57996-58004. [PMID: 33332113 DOI: 10.1021/acsami.0c16068] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
3
Hong S, Na JW, Lee IS, Kim HT, Kang BH, Chung J, Kim HJ. Simultaneously Defined Semiconducting Channel Layer Using Electrohydrodynamic Jet Printing of a Passivation Layer for Oxide Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2020;12:39705-39712. [PMID: 32805908 DOI: 10.1021/acsami.0c07091] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
4
Sanctis S, Hoffmann RC, Koslowski N, Foro S, Bruns M, Schneider JJ. Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications. Chem Asian J 2018;13:3912-3919. [PMID: 30426698 DOI: 10.1002/asia.201801371] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/12/2018] [Revised: 10/07/2018] [Indexed: 11/08/2022]
5
Tak YJ, Hilt F, Keene S, Kim WG, Dauskardt RH, Salleo A, Kim HJ. High-Throughput Open-Air Plasma Activation of Metal-Oxide Thin Films with Low Thermal Budget. ACS APPLIED MATERIALS & INTERFACES 2018;10:37223-37232. [PMID: 30288973 DOI: 10.1021/acsami.8b12373] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
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