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Sun Q, Shi C, Xie W, Li Y, Zhang C, Wu J, Zheng Q, Deng H, Cheng S. Defect Synergistic Regulations of Li&Na Co-Doped Flexible Cu 2 ZnSn(S,Se) 4 Solar Cells Achieving over 10% Certified Efficiency. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2306740. [PMID: 38054649 PMCID: PMC10853737 DOI: 10.1002/advs.202306740] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2023] [Revised: 11/12/2023] [Indexed: 12/07/2023]
Abstract
Ion doping is an effective strategy for achieving high-performance flexible Cu2 ZnSn(S,Se)4 (CZTSSe) solar cells by defect regulations. Here, a Li&Na co-doped strategy is applied to synergistically regulate defects in CZTSSe bulks. The quality absorbers with the uniformly distributed Li and Na elements are obtained using the solution method, where the acetates (LiAc and NaAc) are as additives. The concentration of the harmful CuZn anti-site defects is decreased by 8.13% after Li incorporation, and that of the benign NaZn defects is increased by 36.91% after Na incorporation. Synergistic Li&Na co-doping enhances the carrier concentration and reduces the interfacial defects concentration by one order of magnitude. As a result, the flexible CZTSSe solar cell achieves a power conversion efficiency (PCE) of 10.53% with certified 10.12%. Because of the high PCE and the homogeneous property, the Li&Na co-doped device is fabricated to a large area (2.38 cm2 ) and obtains 9.41% PCE. The co-doping investigation to synergistically regulate defects provides a new perspective for efficient flexible CZTSSe solar cells.
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Affiliation(s)
- Quanzhen Sun
- Institute of Micro‐Nano Devices and Solar CellsCollege of Physics and Information EngineeringFuzhou UniversityFuzhou350108P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
| | - Chen Shi
- Institute of Micro‐Nano Devices and Solar CellsCollege of Physics and Information EngineeringFuzhou UniversityFuzhou350108P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
| | - Weihao Xie
- Institute of Micro‐Nano Devices and Solar CellsCollege of Physics and Information EngineeringFuzhou UniversityFuzhou350108P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
| | - Yifan Li
- Institute of Micro‐Nano Devices and Solar CellsCollege of Physics and Information EngineeringFuzhou UniversityFuzhou350108P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
| | - Caixia Zhang
- Institute of Micro‐Nano Devices and Solar CellsCollege of Physics and Information EngineeringFuzhou UniversityFuzhou350108P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
| | - Jionghua Wu
- Institute of Micro‐Nano Devices and Solar CellsCollege of Physics and Information EngineeringFuzhou UniversityFuzhou350108P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
| | - Qiao Zheng
- Institute of Micro‐Nano Devices and Solar CellsCollege of Physics and Information EngineeringFuzhou UniversityFuzhou350108P. R. China
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and EngineeringChangzhou213164P. R. China
| | - Hui Deng
- Institute of Micro‐Nano Devices and Solar CellsCollege of Physics and Information EngineeringFuzhou UniversityFuzhou350108P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
| | - Shuying Cheng
- Institute of Micro‐Nano Devices and Solar CellsCollege of Physics and Information EngineeringFuzhou UniversityFuzhou350108P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and EngineeringChangzhou213164P. R. China
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Kauk-Kuusik M, Timmo K, Pilvet M, Muska K, Danilson M, Krustok J, Josepson R, Mikli V, Grossberg-Kuusk M. Cu 2ZnSnS 4 monograin layer solar cells for flexible photovoltaic applications. JOURNAL OF MATERIALS CHEMISTRY. A 2023; 11:23640-23652. [PMID: 38014362 PMCID: PMC10644763 DOI: 10.1039/d3ta04541b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Accepted: 10/20/2023] [Indexed: 11/29/2023]
Abstract
Monograin powder technology is one possible path to developing sustainable, lightweight, flexible, and semi-transparent solar cells, which might be ideal for integration with various building and product elements. In recent years, the main research focus of monograin technology has centered around understanding the synthesis and optoelectronic properties of kesterite-type absorber materials. Among these, Cu2ZnSnS4 (CZTS) stands out as a promising solar cell absorber due to its favorable optical and electrical characteristics. CZTS is particularly appealing as its constituent elements are abundant and non-toxic, and it currently holds the record for highest power conversion efficiency (PCE) among emerging inorganic thin-film PV candidates. Despite its advantages, kesterite solar cells' PCE still falls significantly behind the theoretical maximum efficiency due to the large VOC deficit. This review explores various strategies aimed at improving VOC losses to enhance the overall performance of CZTS monograin layer solar cells. It was found that low-temperature post-annealing of CZTS powders reduced Cu-Zn disordering, increasing Eg by ∼100 meV and VOC values; however, achieving the optimal balance between ordered and disordered regions in kesterite materials is crucial for enhancing photovoltaic device performance due to the coexistence of ordered and disordered phases. CZTS alloying with Ag and Cd suppressed non-radiative recombination and increased short-circuit current density. Optimizing Ag content at 1% reduced CuZn antisite defects, but higher Ag levels compensated for acceptor defects, leading to reduced carrier density and decreased solar cell performance. Co-doping with Li and K resulted in an increased bandgap (1.57 eV) and improved VOC, but further optimization is required due to a relatively large difference between measured and theoretical VOC. Heterojunction modifications led to the most effective PCE improvement in CZTS-based solar cells, achieving an overall efficiency of 12.06%.
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Affiliation(s)
- Marit Kauk-Kuusik
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Kristi Timmo
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Maris Pilvet
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Katri Muska
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Mati Danilson
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Jüri Krustok
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Raavo Josepson
- Division of Physics, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Valdek Mikli
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
| | - Maarja Grossberg-Kuusk
- Laboratory of Photovoltaic Materials, Tallinn University of Technology Ehitajate tee 5 Tallinn Estonia
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He M, Yan C, Li J, Suryawanshi MP, Kim J, Green MA, Hao X. Kesterite Solar Cells: Insights into Current Strategies and Challenges. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2004313. [PMID: 33977066 PMCID: PMC8097387 DOI: 10.1002/advs.202004313] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2020] [Revised: 01/06/2021] [Indexed: 06/12/2023]
Abstract
Earth-abundant and environmentally benign kesterite Cu2ZnSn(S,Se)4 (CZTSSe) is a promising alternative to its cousin chalcopyrite Cu(In,Ga)(S,Se)2 (CIGS) for photovoltaic applications. However, the power conversion efficiency of CZTSSe solar cells has been stagnant at 12.6% for years, still far lower than that of CIGS (23.35%). In this report, insights into the latest cutting-edge strategies for further advance in the performance of kesterite solar cells is provided, particularly focusing on the postdeposition thermal treatment (for bare absorber, heterojunction, and completed device), alkali doping, and bandgap grading by engineering graded cation and/or anion alloying. These strategies, which have led to the step-change improvements in the power conversion efficiency of the counterpart CIGS solar cells, are also the most promising ones to achieve further efficiency breakthroughs for kesterite solar cells. Herein, the recent advances in kesterite solar cells along these pathways are reviewed, and more importantly, a comprehensive understanding of the underlying mechanisms is provided, and promising directions for the ongoing development of kesterite solar cells are proposed.
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Affiliation(s)
- Mingrui He
- School of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesNew South WalesSydneyNSW2052Australia
| | - Chang Yan
- School of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesNew South WalesSydneyNSW2052Australia
| | - Jianjun Li
- School of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesNew South WalesSydneyNSW2052Australia
| | - Mahesh P. Suryawanshi
- School of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesNew South WalesSydneyNSW2052Australia
| | - Jinhyeok Kim
- Department of Materials Science and EngineeringChonnam National UniversityGwangju61186Republic of Korea
| | - Martin A. Green
- School of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesNew South WalesSydneyNSW2052Australia
| | - Xiaojing Hao
- School of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesNew South WalesSydneyNSW2052Australia
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Zhou J, Xu X, Duan B, Shi J, Luo Y, Wu H, Li D, Meng Q. Research Progress of Metal(I) Substitution in Cu2ZnSn(S,Se)4 Thin Film Solar Cells. ACTA CHIMICA SINICA 2021. [DOI: 10.6023/a20100457] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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He W, Sui Y, Zeng F, Wang Z, Wang F, Yao B, Yang L. Enhancing the Performance of Aqueous Solution-Processed Cu 2ZnSn(S,Se) 4 Photovoltaic Materials by Mn 2+ Substitution. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E1250. [PMID: 32605150 PMCID: PMC7407762 DOI: 10.3390/nano10071250] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2020] [Revised: 06/19/2020] [Accepted: 06/23/2020] [Indexed: 12/02/2022]
Abstract
In this work, the Cu2MnxZn1-xSn(S,Se)4 (0 ≤ x ≤ 1) (CMZTSSe) alloy films were fabricated by a sol-gel method. Meanwhile, the effects of Mn substitution on the structural, morphological, electrical, optical, and device performance were studied systematically. The clear phase transformation from Cu2ZnSn(S,Se)4 (CZTSSe) with kesterite structure to Cu2MnSn(S,Se)4 (CMTSSe) with stannite structure was observed as x = 0.4. The scanning electron microscope (SEM) results show that the Mn can facilitate the grain growth of CMZTSSe alloy films. Since the x was 0.1, the uniform, compact, and smooth film was obtained. The results show that the band gap of the CMZTSSe film with a kesterite structure was incessantly increased in a scope of 1.024-1.054 eV with the increase of x from 0 to 0.3, and the band gap of the CMZTSSe film with stannite structure was incessantly decreased in a scope of 1.047-1.013 eV with the increase of x from 0.4 to 1. Meanwhile, compared to the power conversion efficiency (PCE) of pure CZTSSe device, the PCE of CMZTSSe (x = 0.1) device is improved from 3.61% to 4.90%, and about a maximum enhanced the open-circuit voltage (VOC) of 30 mV is achieved. The improvement is concerned with the enhancement of the grain size and decrease of the Cu instead of Zn (CuZn) anti-site defects. Therefore, it is believed that the adjunction of a small amount of Mn may be an appropriate approach to improve the PCE of CZTSSe solar cells.
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Affiliation(s)
- Wenjie He
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, China; (W.H.); (F.Z.); (Z.W.); (F.W.); (L.Y.)
| | - Yingrui Sui
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, China; (W.H.); (F.Z.); (Z.W.); (F.W.); (L.Y.)
| | - Fancong Zeng
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, China; (W.H.); (F.Z.); (Z.W.); (F.W.); (L.Y.)
| | - Zhanwu Wang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, China; (W.H.); (F.Z.); (Z.W.); (F.W.); (L.Y.)
| | - Fengyou Wang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, China; (W.H.); (F.Z.); (Z.W.); (F.W.); (L.Y.)
| | - Bin Yao
- State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130012, China;
| | - Lili Yang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, China; (W.H.); (F.Z.); (Z.W.); (F.W.); (L.Y.)
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Ishizuka S, Fons PJ. Lithium-Doping Effects in Cu(In,Ga)Se 2 Thin-Film and Photovoltaic Properties. ACS APPLIED MATERIALS & INTERFACES 2020; 12:25058-25065. [PMID: 32383588 DOI: 10.1021/acsami.0c06284] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The beneficial effects of heavy alkali metals such as K, Rb, and Cs in enhancing Cu(In,Ga)Se2 (CIGS) photovoltaic efficiencies are widely known, though the detailed mechanism is still open for discussion. In the present work, the effects of the lightest alkali metal, Li, on CIGS thin-film and device properties are focused upon and compared to the effects of heavy alkali metals. Till date, the beneficial effects of elemental Li on Cu2ZnSnS4 photovoltaic devices in enhancing efficiencies have been reported. On the other hand, it is shown in the present work that the beneficial effects of Li on CIGS are not so significant. In contrast to the effects of Na or Rb in enhancing CIGS(112) growth orientation, Li was revealed not to affect CIGS growth orientation. The most distinctive feature observed between Li and other alkali metals was the elemental depth profile in CIGS films. Namely, Na and heavier alkali metals show a concentration peak near the surface (relatively Cu-poor) region of CIGS films, whereas elemental Li showed no such trend, suggesting that Li has no significant effect on CIGS surface modification. Nonetheless, Li was found to have some effect in enhancing the PL peak intensity and photovoltaic performance of CIGS, though the effect is relatively small in comparison to that obtained with other alkali metals.
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Affiliation(s)
- Shogo Ishizuka
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
| | - Paul J Fons
- Department of Electronics and Electrical Engineering, Keio University, 4-1-1 Hiyoshi, Kohoku-ku, Yokohama, Kanagawa 223-8521, Japan
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Giraldo S, Jehl Z, Placidi M, Izquierdo-Roca V, Pérez-Rodríguez A, Saucedo E. Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1806692. [PMID: 30767308 DOI: 10.1002/adma.201806692] [Citation(s) in RCA: 74] [Impact Index Per Article: 14.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2018] [Revised: 12/18/2018] [Indexed: 06/09/2023]
Abstract
The latest progress and future perspectives of thin film photovoltaic kesterite technology are reviewed herein. Kesterite is currently the most promising emerging fully inorganic thin film photovoltaic technology based on critical raw-material-free and sustainable solutions. The positioning of kesterites in the frame of the emerging inorganic solar cells is first addressed, and the recent history of this family of materials briefly described. A review of the fast progress achieved earlier this decade is presented, toward the relative slowdown in the recent years partly explained by the large open-circuit voltage (VOC ) deficit recurrently observed even in the best solar cell devices in the literature. Then, through a comparison with the close cousin Cu(In,Ga)Se2 technology, doping and alloying strategies are proposed as critical for enhancing the conversion efficiency of kesterite. In the second section herein, intrinsic and extrinsic doping, as well as alloying strategies are reviewed, presenting the most relevant and recent results, and proposing possible pathways for future implementation. In the last section, a review on technological applications of kesterite is presented, going beyond conventional photovoltaic devices, and demonstrating their suitability as potential candidates in advanced tandem concepts, photocatalysis, thermoelectric, gas sensing, etc.
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Affiliation(s)
- Sergio Giraldo
- Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930, Sant Adrià de Besòs, Barcelona, Spain
| | - Zacharie Jehl
- Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930, Sant Adrià de Besòs, Barcelona, Spain
| | - Marcel Placidi
- Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930, Sant Adrià de Besòs, Barcelona, Spain
| | - Victor Izquierdo-Roca
- Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930, Sant Adrià de Besòs, Barcelona, Spain
| | - Alejandro Pérez-Rodríguez
- Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930, Sant Adrià de Besòs, Barcelona, Spain
- IN2UB, Departament d'Enginyeria Electrònica i Biomèdica, Universitat de Barcelona, Martí i Franquès, 1-11, 08028, Barcelona, Spain
| | - Edgardo Saucedo
- Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930, Sant Adrià de Besòs, Barcelona, Spain
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Gang MG, Shin SW, Suryawanshi MP, Ghorpade UV, Song Z, Jang JS, Yun JH, Cheong H, Yan Y, Kim JH. Band Tail Engineering in Kesterite Cu 2ZnSn(S,Se) 4 Thin-Film Solar Cells with 11.8% Efficiency. J Phys Chem Lett 2018; 9:4555-4561. [PMID: 30048140 DOI: 10.1021/acs.jpclett.8b01433] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Herein, we report a facile process, i.e., controlling the initial chamber pressure during the postdeposition annealing, to effectively lower the band tail states in the synthesized CZTSSe thin films. Through detailed analysis of the external quantum efficiency derivative ( dEQE/ dλ) and low-temperature photoluminescence (LTPL) data, we find that the band tail states are significantly influenced by the initial annealing pressure. After carefully optimizing the deposition processes and device design, we are able to synthesize kesterite CZTSSe thin films with energy differences between inflection of d(EQE)/dλ and LTPL as small as 10 meV. These kesterite CZTSSe thin films enable the fabrication of solar cells with a champion efficiency of 11.8% with a low Voc deficit of 582 mV. The results suggest that controlling the annealing process is an effective approach to reduce the band tail in kesterite CZTSSe thin films.
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Affiliation(s)
- Myeng Gil Gang
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering , Chonnam National University , 300, Yongbong-Dong , Buk-Gu, Gwangju 61186 , South Korea
| | - Seung Wook Shin
- Department of Physics and Astronomy and Wright Center for Photovoltaic Innovation and Commercialization , University of Toledo , Toledo , Ohio 43606 , United States
| | - Mahesh P Suryawanshi
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering , Chonnam National University , 300, Yongbong-Dong , Buk-Gu, Gwangju 61186 , South Korea
| | - Uma V Ghorpade
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering , Chonnam National University , 300, Yongbong-Dong , Buk-Gu, Gwangju 61186 , South Korea
| | - Zhaoning Song
- Department of Physics and Astronomy and Wright Center for Photovoltaic Innovation and Commercialization , University of Toledo , Toledo , Ohio 43606 , United States
| | - Jun Sung Jang
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering , Chonnam National University , 300, Yongbong-Dong , Buk-Gu, Gwangju 61186 , South Korea
| | - Jae Ho Yun
- Photovoltaic Laboratory , Korea Institute of Energy Research , 71-2, Jang-Dong , Yuesong-Gu, Daejeon 34129 , South Korea
| | - Hyeonsik Cheong
- Department of Physics , Sogang University , Seoul 121-742 , South Korea
| | - Yanfa Yan
- Department of Physics and Astronomy and Wright Center for Photovoltaic Innovation and Commercialization , University of Toledo , Toledo , Ohio 43606 , United States
| | - Jin Hyeok Kim
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering , Chonnam National University , 300, Yongbong-Dong , Buk-Gu, Gwangju 61186 , South Korea
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