Selective Chemical Response of Transition Metal Dichalcogenides and Metal Dichalcogenides in Ambient Conditions

Interfacial Se-O Bonds Modulating Spatial Charge Distribution in FeSe2/Nb:Fe2O3 with Rapid Hole Extraction for Efficient Photoelectrochemical Water Oxidation

Surface engineering is an effective strategy to improve the photoelectrochemical (PEC) catalytic activity of hematite, and the defect states with abundant coordinative unsaturation atoms can serve as anchoring sites for constructing intimate connections between semiconductors. On this basis, we anchored an ultrathin FeSe2 layer on Nb5+-doped Fe2O3 (FeSe2/Nb:Fe2O3) via interfacial Se-O chemical bonds to tune the surface potential. Density functional theory (DFT) calculations indicate that amorphous FeSe2 decoration could generate electron delocalization over the composite photoanodes so that the electron mobility was improved to a large extent. Furthermore, electrons could be transferred via the newly formed Se-O bonds at the interface and holes were collected at the surface of electrode for PEC water oxidation. The desired charge redistribution is in favor of suppressing charge recombination and extracting effective holes. Later, work function calculations and Mott-Schottky (M-S) plots demonstrate that a type-II heterojunction was formed in FeSe2/Nb:Fe2O3, which further expedited carrier separation. Except for spatial carrier modulation, the amorphous FeSe2 layer also provided abundant active sites for intermediates adsorption according to the d band center results. In consequence, the target photoanodes attained an improved photocurrent density of 2.42 mA cm-2 at 1.23 V versus the reversible hydrogen electrode (RHE), 2.5 times as that of the bare Fe2O3. This study proposed a defect-anchoring method to grow a close-connected layer via interfacial chemical bonds and revealed the spatial charge distribution effects of FeSe2 on Nb:Fe2O3, giving insights into rational designation in composite photoanodes.

Graphene nanoplatelets and other 2D-materials as protective means against the fading of coloured inks, dyes and paints

The present work demonstrates the ability of graphene nanoplatelets (GNPs) and other two-dimensional materials (2DMs) like tungsten disulfide (WS2), molybdenum disulfide (MoS2) and hexagonal boron nitride (hBN) to act as protective barriers against the fading of architectural paints and also inks/paints used in art. The results present a new approach for improving the lightfastness of colours of artworks and painted indoor/outdoor wall surfaces taking advantage of the remarkable properties of 2DMs. As shown herein, commercial inks and architectural paints of different colours doped with graphene nanoplatelets (GNPs), graphene oxide (GO), reduced graphene oxide (rGO) and other 2DMs, exhibit a superior resistance to fading under ultraviolet radiation or even under exposure to visible light. A spectroscopic study on these inks and dyes reveals that the peaks which are characteristic of the colour pigments are less affected from aging/fading when the GNPs and the other 2DMs are present. The protection mechanism for the GNPs and the other 2DMs differs. For GNPs, mainly their high surface area which leads to free radicals scavenging (especially hydroxyl radicals), and secondarily their UV absorption, are responsible for their protection effects, while for GO, a transition to rGO structures and consequently to 'smart' paints can be observed after the performed aging routes. In this way, the paint gets improved by time preventing or slowing its own fading and decolorization. For the other 2DMs, the transition-metal dichalcogenides performed better than hBN, even though they all absorb in the UV region. This can be ascribed to the facts that the formers also absorb in the visible, while hBN does not, while most importantly, they can trap reactive oxygen species (ROS) and corrosive gases in their structure as opposed to hBN. By conducting colorimetric measurements, we have discovered that the lifetime of the as-developed 2DM-doped inks and paints can be extended by up to ∼40%.

Bidimensional Engineered Amorphous a-SnO2 Interfaces: Synthesis and Gas Sensing Response to H2S and Humidity

Two-dimensional (2D) transition metal dichalcogenides (TMDs) and metal chalcogenides (MCs), despite their excellent gas sensing properties, are subjected to spontaneous oxidation in ambient air, negatively affecting the sensor's signal reproducibility in the long run. Taking advantage of spontaneous oxidation, we synthesized fully amorphous a-SnO₂ 2D flakes (≈30 nm thick) by annealing in air 2D SnSe₂ for two weeks at temperatures below the crystallization temperature of SnO₂ (T < 280 °C). These engineered a-SnO₂ interfaces, preserving all the precursor's 2D surface-to-volume features, are stable in dry/wet air up to 250 °C, with excellent baseline and sensor's signal reproducibility to H₂S (400 ppb to 1.5 ppm) and humidity (10-80% relative humidity (RH)) at 100 °C for one year. Specifically, by combined density functional theory and ab initio molecular dynamics, we demonstrated that H₂S and H₂O compete by dissociative chemisorption over the same a-SnO₂ adsorption sites, disclosing the humidity cross-response to H₂S sensing. Tests confirmed that humidity decreases the baseline resistance, hampers the H₂S sensor's signal (i.e., relative response (RR) = R_a/R_g), and increases the limit of detection (LOD). At 1 ppm, the H₂S sensor's signal decreases from an RR of 2.4 ± 0.1 at 0% RH to 1.9 ± 0.1 at 80% RH, while the LOD increases from 210 to 380 ppb. Utilizing a suitable thermal treatment, here, we report an amorphization procedure that can be easily extended to a large variety of TMDs and MCs, opening extraordinary applications for 2D layered amorphous metal oxide gas sensors.

Air Annealing Process for Threshold Voltage Tuning of MoTe2 FET

A stable doping technique for modifying the conduction behaviour of two-dimensional (2D) nanomaterial-based transistors is imperative for applications based on low-power complementary oxide thin-film transistors. Achieving an ambipolar feature with a controlled threshold voltage in both the p- and n-regimes is crucial for applying MoTe2-based devices as electronic devices because their native doping states are unipolar. In this study, a simple method to tune the threshold voltage of MoTe2 field-effect transistors (FETs) was investigated in order to realise an enhancement-mode MoTe2 thin-film transistor by implementing a facile method to modulate the carrier polarity based on the oxidative properties of MoTe2 FETs. Annealing in air induced a continuous p-doping effect in the devices without significant electrical degradation. Through a precise control of the duration and temperature of the post-annealing process, the tailoring technique induces hole doping, which results in a remarkable shift in transfer characteristics, thus leading to a charge neutrality point of the devices at zero gate bias. This study demonstrates the considerable potential of air heating as a reliable and economical post-processing method for precisely modifying the threshold voltage and further controlling the doping states of MoTe2-based FETs for use in logic inverters with 2D semiconductors.

Photoluminescence Lightening: Extraordinary Oxygen Modulated Dynamics in WS2 Monolayers

Transition metal dichalcogenide monolayers exhibit ultrahigh surface sensitivity since they expose all atoms to the surface and thereby influence their optoelectronic properties. Here, we report an intriguing lightening of the photoluminescence (PL) from the edge to the interior over time in the WS₂ monolayers grown by physical vapor deposition method, with the whole monolayer brightened eventually. Comprehensive optical studies reveal that the PL enhancement arises from the p doping induced by oxygen adsorption. First-principles calculations unveil that the dissociation of chemisorbed oxygen molecule plays a significant role; i.e., the dissociation at one site can largely promote the dissociation at a nearby site, facilitating the photoluminescence lightening. In addition, we further manipulate such PL brightening rate by controlling the oxygen concentration and the temperature. The presented results uncover the extraordinary surface chemistry and related mechanism in WS₂ monolayers, which deepens our insight into their unique PL evolution behavior.

Tin Diselenide (SnSe2) Van der Waals Semiconductor: Surface Chemical Reactivity, Ambient Stability, Chemical and Optical Sensors

Tin diselenide (SnSe₂) is a layered semiconductor with broad application capabilities in the fields of energy storage, photocatalysis, and photodetection. Here, we correlate the physicochemical properties of this van der Waals semiconductor to sensing applications for detecting chemical species (chemosensors) and millimeter waves (terahertz photodetectors) by combining experiments of high-resolution electron energy loss spectroscopy and X-ray photoelectron spectroscopy with density functional theory. The response of the pristine, defective, and oxidized SnSe₂ surface towards H₂, H₂O, H₂S, NH₃, and NO₂ analytes was investigated. Furthermore, the effects of the thickness were assessed for monolayer, bilayer, and bulk samples of SnSe₂. The formation of a sub-nanometric SnO₂ skin over the SnSe₂ surface (self-assembled SnO₂/SnSe₂ heterostructure) corresponds to a strong adsorption of all analytes. The formation of non-covalent bonds between SnO₂ and analytes corresponds to an increase of the magnitude of the transferred charge. The theoretical model nicely fits experimental data on gas response to analytes, validating the SnO₂/SnSe₂ heterostructure as a suitable playground for sensing of noxious gases, with sensitivities of 0.43, 2.13, 0.11, 1.06 [ppm]⁻¹ for H₂, H₂S, NH₃, and NO_2, respectively. The corresponding limit of detection is 5 ppm, 10 ppb, 250 ppb, and 400 ppb for H₂, H₂S, NH₃, and NO_2, respectively. Furthermore, SnSe₂-based sensors are also suitable for fast large-area imaging applications at room temperature for millimeter waves in the THz range.

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

The band alignment, interface states, interface coupling, and carrier transport of semiconductor heterojunctions (SHs) need to be well understood for the design and fabrication of various important semiconductor structures and devices. Scanning tunneling microscopy (STM) with high spatial resolution and scanning tunneling spectroscopy (STS) with high energy resolution are significantly contributing to the understanding on the important properties of SHs. In this work, the recent progress on the use of STM and STS to study lateral, vertical and bulk SHs is reviewed. The spatial structures of SHs with atomically flat surface have been examined with STM. The electronic band structures (e. g., the band offset, interface state, and space charge region) of SHs are measured with STS. Combined with the spatial structures and the tunneling spectra features, the mechanism for the carrier transport in the SH may be proposed.

Metallic Transition Metal Dichalcogenides of Group VIB: Preparation, Stabilization, and Energy Applications

Layered transition metal dichalcogenides (TMDs) of group VIB have been widely used in the realms of energy storage and conversions. Along with the existence of semiconducting states, their metallic phases have recently attracted numerous attentions owing to their fascinating physical and chemical properties. Many efforts have been devoted to obtain metallic TMDs with high purity and yield. Nevertheless, such metallic phase is thermodynamically metastable and tends to convert into semiconducting phase, which necessitates the exploration over effective strategies to ensure the stability. In this review, typical fabrication routes are introduced and those critical factors during preparation are elaborately discussed. Moreover, the stabilized strategies are summarized with concrete examples highlighting the key mechanisms toward efficient stabilization. Finally, emerging energy applications are overviewed. This review presents comprehensive research status of metallic group VIB TMDs, aiming to facilitate further scientific investigations and promote future practical applications in the fields of energy storage and conversion.

Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS2, WSe2, and WTe2

Two-dimensional (2D) tungsten disulfide (WS₂), tungsten diselenide (WSe₂), and tungsten ditelluride (WTe₂) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS₂, WSe₂, and WTe₂ using a complementary suite of experiments and theoretical calculations. High-quality 1L WS₂ has the highest Young's modulus (302.4 ± 24.1 GPa) and strength (47.0 ± 8.6 GPa) of the entire family, overpassing those of 1L WSe₂ (258.6 ± 38.3 and 38.0 ± 6.0 GPa, respectively) and WTe₂ (149.1 ± 9.4 and 6.4 ± 3.3 GPa, respectively). However, the elasticity and strength of WS₂ decrease most dramatically with increased thickness among the three materials. We interpret the phenomenon by the different tendencies for interlayer sliding in an equilibrium state and under in-plane strain and out-of-plane compression conditions in the indentation process, revealed by the finite element method and density functional theory calculations including van der Waals interactions. We also demonstrate that the mechanical properties of the high-quality 1-3L WS₂ and WSe₂ are largely stable in air for up to 20 weeks. Intriguingly, the 1-3L WSe₂ shows increased modulus and strength values with aging in the air. This is ascribed to oxygen doping, which reinforces the structure. The present study will facilitate the design and use of 2D tungsten dichalcogenides in applications such as strain engineering and flexible field-effect transistors.

Robust Room-Temperature NO2 Sensors from Exfoliated 2D Few-Layered CVD-Grown Bulk Tungsten Di-selenide (2H-WSe2)

We report a facile and robust room-temperature NO2 sensor fabricated using bi- and multi-layered 2H variant of tungsten di-selenide (2H-WSe2) nanosheets, exhibiting high sensing characteristics. A simple liquid-assisted exfoliation of 2H-WSe2, prepared using ambient pressure chemical vapor deposition, allows smooth integration of these nanosheets on transducers. Three sensor batches are fabricated by modulating the total number of layers (L) obtained from the total number of droplets from a homogeneous 2H-WSe2 dispersion, such as ∼2L, ∼5-6L, and ∼13-17L, respectively. The gas-sensing attributes of 2H-WSe2 nanosheets are investigated thoroughly. Room temperature (RT) experiments show that these devices are specifically tailored for NO2 detection. 2L WSe2 nanosheets deliver the best rapid response compared to ∼5-6L or ∼13-17L. The response of 2L WSe2 at RT is 250, 328, and 361% to 2, 4, and 6 ppm NO2, respectively. The sensor showed nearly the same response toward low NO2 concentration even after 9 months of testing, confirming its remarkable long-term stability. A selectivity study, performed at three working temperatures (RT, 100, and 150 °C), shows high selectivity at 150 and 100 °C. Full selectivity toward NO2 at RT confirms that 2H-WSe2 nanosheet-based sensors are ideal candidates for NO2 gas detection.

Self-Assembled SnO2/SnSe2 Heterostructures: A Suitable Platform for Ultrasensitive NO2 and H2 Sensing

By means of experiments and theory, the gas-sensing properties of tin diselenide (SnSe₂) were elucidated. We discover that, while the stoichiometric single crystal is chemically inert even in air, the nonstoichiometric sample assumes a subnanometric SnO₂ surface oxide layer once exposed to ambient atmosphere. The presence of Se vacancies induces the formation of a metastable SeO₂-like layer, which is finally transformed into a SnO₂ skin. Remarkably, the self-assembled SnO₂/SnSe_2-x heterostructure is particularly efficient in gas sensing, whereas the stoichiometric SnSe₂ sample does not show sensing properties. Congruently with the theoretical model, direct sensing tests carried out on SnO₂/SnSe_2-x at an operational temperature of 150 °C provided sensitivities of (1.06 ± 0.03) and (0.43 ± 0.02) [ppm]^-1 for NO₂ and H₂, respectively, in dry air. The corresponding calculated limits of detection are (0.36 ± 0.01) and (3.6 ± 0.1) ppm for NO₂ and H₂, respectively. No detectable changes in gas-sensing performances are observed in a time period extended above six months. Our results pave the way for a novel generation of ambient-stable gas sensor based on self-assembled heterostructures formed taking advantage on the natural interaction of substoichiometric van der Waals semiconductors with air.