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Wang Y, Lv P, Pan J, Chen J, Liu X, Hu M, Wan L, Cao K, Liu B, Ku Z, Cheng YB, Lu J. Grain Boundary Elimination via Recrystallization-Assisted Vapor Deposition for Efficient and Stable Perovskite Solar Cells and Modules. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304625. [PMID: 37466632 DOI: 10.1002/adma.202304625] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2023] [Revised: 07/16/2023] [Accepted: 07/17/2023] [Indexed: 07/20/2023]
Abstract
Vapor deposition is a promising technology for the mass production of perovskite solar cells. However, the efficiencies of solar cells and modules based on vapor-deposited perovskites are significantly lower than those fabricated using the solution method. Emerging evidence suggests that large defects are generated during vapor deposition owing to a specific top-down crystallization mechanism. Herein, a hybrid vapor deposition method combined with solvent-assisted recrystallization for fabricating high-quality large-area perovskite films with low defect densities is presented. It is demonstrated that an intermediate phase can be formed at the grain boundaries, which induces the secondary growth of small grains into large ones. Consequently, perovskite films with substantially reduced grain boundaries and defect densities are fabricated. Results of temperature-dependent charge-carrier dynamics show that the proposed method successfully suppresses all recombination reactions. Champion efficiencies of 21.9% for small-area (0.16 cm2 ) cells and 19.9% for large-area (10.0 cm2 ) solar modules under AM 1.5 G irradiation are achieved. Moreover, the modules exhibit high operational stability, i.e., they retain >92% of their initial efficiencies after 200 h of continuous operation.
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Affiliation(s)
- Yulong Wang
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, China
| | - Pin Lv
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, China
| | - Junye Pan
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, China
| | - Jiahui Chen
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, China
| | - Xinjie Liu
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, China
| | - Min Hu
- School of Electronic and Electrical Engineering, Hubei Province Engineering Research Center for Intelligent Micro-Nano Medical Equipment and Key Technologies, Wuhan Textile University, Wuhan, 430200, China
| | - Li Wan
- Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Faculty of Materials Science and Engineering, Hubei University, Wuhan, 430062, China
| | - Kun Cao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Baoshun Liu
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, China
| | - Zhiliang Ku
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| | - Yi-Bing Cheng
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
- Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory, Foshan, 528216, China
| | - Jianfeng Lu
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, China
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2
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Liu W, Shi T, Zhu J, Zhang Z, Li D, He X, Fan X, Meng L, Wang J, He R, Ge Y, Liu Y, Chu PK, Yu X. PbI 2 -DMSO Assisted In Situ Growth of Perovskite Wafers for Sensitive Direct X-Ray Detection. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 10:e2204512. [PMID: 36372541 PMCID: PMC9811467 DOI: 10.1002/advs.202204512] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/07/2022] [Revised: 10/01/2022] [Indexed: 06/16/2023]
Abstract
Although perovskite wafers with a scalable size and thickness are suitable for direct X-ray detection, polycrystalline perovskite wafers have drawbacks such as the high defect density, defective grain boundaries, and low crystallinity. Herein, PbI2 -DMSO powders are introduced into the MAPbI3 wafer to facilitate crystal growth. The PbI2 powders absorb a certain amount of DMSO to form the PbI2 -DMSO powders and PbI2 -DMSO is converted back into PbI2 under heating while releasing DMSO vapor. During isostatic pressing of the MAPbI3 wafer with the PbI2 -DMSO solid additive, the released DMSO vapor facilitates in situ growth in the MAPbI3 wafer with enhanced crystallinity and reduced defect density. A dense and compact MAPbI3 wafer with a high mobility-lifetime (µτ) product of 8.70 × 10-4 cm2 V-1 is produced. The MAPbI3 -based direct X-ray detector fabricated for demonstration shows a high sensitivity of 1.58 × 104 µC Gyair-1 cm-2 and a low detection limit of 410 nGyair s-1 .
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Affiliation(s)
- Wenjun Liu
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong518055China
- Nano Science and Technology InstituteUniversity of Science and Technology of ChinaSuzhou215123China
| | - Tongyu Shi
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong518055China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Jiongtao Zhu
- Research Center for Medical Artificial IntelligenceShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518055China
| | - Zhenyu Zhang
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong518055China
| | - Dong Li
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong518055China
| | - Xingchen He
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong518055China
| | - Xiongsheng Fan
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong518055China
| | - Lingqiang Meng
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong518055China
| | - Jiahong Wang
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong518055China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Rui He
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong518055China
| | - Yongshuai Ge
- University of Chinese Academy of SciencesBeijing100049P. R. China
- Research Center for Medical Artificial IntelligenceShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518055China
| | - Yanliang Liu
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong518055China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Paul K. Chu
- Department of PhysicsDepartment of Materials Science and Engineeringand Department of Biomedical EngineeringCity University of Hong KongTat Chee Avenue, KowloonHong KongChina
| | - Xue‐Feng Yu
- Materials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhenGuangdong518055China
- University of Chinese Academy of SciencesBeijing100049P. R. China
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3
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Du S, Yang J, Qu S, Lan Z, Sun T, Dong Y, Shang Z, Liu D, Yang Y, Yan L, Wang X, Huang H, Ji J, Cui P, Li Y, Li M. Impact of Precursor Concentration on Perovskite Crystallization for Efficient Wide-Bandgap Solar Cells. MATERIALS 2022; 15:ma15093185. [PMID: 35591518 PMCID: PMC9101143 DOI: 10.3390/ma15093185] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2022] [Revised: 04/19/2022] [Accepted: 04/25/2022] [Indexed: 02/04/2023]
Abstract
High-crystalline-quality wide-bandgap metal halide perovskite materials that achieve superior performance in perovskite solar cells (PSCs) have been widely explored. Precursor concentration plays a crucial role in the wide-bandgap perovskite crystallization process. Herein, we investigated the influence of precursor concentration on the morphology, crystallinity, optical property, and defect density of perovskite materials and the photoelectric performance of solar cells. We found that the precursor concentration was the key factor for accurately controlling the nucleation and crystal growth process, which determines the crystallization of perovskite materials. The precursor concentration based on Cs0.05FA0.8MA0.15Pb(I0.84Br0.16)3 perovskite was controlled from 0.8 M to 2.3 M. The perovskite grains grow larger with the increase in concentration, while the grain boundary and bulk defect decrease. After regulation and optimization, the champion PSC with the 2.0 M precursor concentration exhibits a power conversion efficiency (PCE) of 21.13%. The management of precursor concentration provides an effective way for obtaining high-crystalline-quality wide-bandgap perovskite materials and high-performance PSCs.
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Affiliation(s)
- Shuxian Du
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China; (S.D.); (S.Q.); (Z.L.); (Y.Y.); (L.Y.); (X.W.); (H.H.); (J.J.); (P.C.); (Y.L.)
| | - Jing Yang
- China Three Gorges Corporation, Institute of Science and Technology, Beijing 100038, China; (J.Y.); (T.S.); (Y.D.); (Z.S.); (D.L.)
| | - Shujie Qu
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China; (S.D.); (S.Q.); (Z.L.); (Y.Y.); (L.Y.); (X.W.); (H.H.); (J.J.); (P.C.); (Y.L.)
| | - Zhineng Lan
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China; (S.D.); (S.Q.); (Z.L.); (Y.Y.); (L.Y.); (X.W.); (H.H.); (J.J.); (P.C.); (Y.L.)
| | - Tiange Sun
- China Three Gorges Corporation, Institute of Science and Technology, Beijing 100038, China; (J.Y.); (T.S.); (Y.D.); (Z.S.); (D.L.)
| | - Yixin Dong
- China Three Gorges Corporation, Institute of Science and Technology, Beijing 100038, China; (J.Y.); (T.S.); (Y.D.); (Z.S.); (D.L.)
| | - Ziya Shang
- China Three Gorges Corporation, Institute of Science and Technology, Beijing 100038, China; (J.Y.); (T.S.); (Y.D.); (Z.S.); (D.L.)
| | - Dongxue Liu
- China Three Gorges Corporation, Institute of Science and Technology, Beijing 100038, China; (J.Y.); (T.S.); (Y.D.); (Z.S.); (D.L.)
| | - Yingying Yang
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China; (S.D.); (S.Q.); (Z.L.); (Y.Y.); (L.Y.); (X.W.); (H.H.); (J.J.); (P.C.); (Y.L.)
| | - Luyao Yan
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China; (S.D.); (S.Q.); (Z.L.); (Y.Y.); (L.Y.); (X.W.); (H.H.); (J.J.); (P.C.); (Y.L.)
| | - Xinxin Wang
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China; (S.D.); (S.Q.); (Z.L.); (Y.Y.); (L.Y.); (X.W.); (H.H.); (J.J.); (P.C.); (Y.L.)
| | - Hao Huang
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China; (S.D.); (S.Q.); (Z.L.); (Y.Y.); (L.Y.); (X.W.); (H.H.); (J.J.); (P.C.); (Y.L.)
| | - Jun Ji
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China; (S.D.); (S.Q.); (Z.L.); (Y.Y.); (L.Y.); (X.W.); (H.H.); (J.J.); (P.C.); (Y.L.)
| | - Peng Cui
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China; (S.D.); (S.Q.); (Z.L.); (Y.Y.); (L.Y.); (X.W.); (H.H.); (J.J.); (P.C.); (Y.L.)
| | - Yingfeng Li
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China; (S.D.); (S.Q.); (Z.L.); (Y.Y.); (L.Y.); (X.W.); (H.H.); (J.J.); (P.C.); (Y.L.)
| | - Meicheng Li
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing 102206, China; (S.D.); (S.Q.); (Z.L.); (Y.Y.); (L.Y.); (X.W.); (H.H.); (J.J.); (P.C.); (Y.L.)
- Correspondence:
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4
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Kumar M, Pawar V, Jha PK, Jha PA, Singh P. Compositional degradation with Br content in Cesium lead halide CsPbBrxI3-x. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.122893] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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Zhang Y, Chen Q, Yang HS, Kim D, Shin I, Lee BR, Kim JH, Moon DK, Kim KH, Park SH. Water-Repellent Perovskites Induced by a Blend of Organic Halide Salts for Efficient and Stable Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2021; 13:33172-33181. [PMID: 34237941 DOI: 10.1021/acsami.1c09093] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Despite tremendous progress in the power conversion efficiency (PCE) of perovskite solar cells (PeSCs), the long-term stability issue remains a significant challenge for commercialization. In this study, by blending organic halide salts, phenylethylammonium halide (PEAX, X = I, Br), with CH3NH3PbI3 (MAPbI3), we achieved remarkable enhancements in the water-repellency of perovskite films and long-term stability of PeSCs, together with enhanced PCE. The hydrophobic aromatic PEA+ group in PEAX protects the perovskite film from destruction by water. In addition, the smaller halide Br- in PEABr restructures MAPbI3 to form MAPbI3-xBrx during post-annealing, leading to lattice contraction with beneficial crystallization quality. The perovskite films modified by PEAX exhibited excellent water resistance. When the perovskite films were directly immersed in water, no obvious decompositions were observed, even after 60 s. The PEAX-decorated PeSCs exhibited considerable long-term stability. Under high-humidity conditions (60 ± 5%), the PEAX-decorated PeSCs held 80.5% for PEAI and 85.2% for PEABr of their original PCE after exposure for 100 h, whereas the pristine PeSC device lost more than 99% of its initial PCE after exposure for 60 h under the same conditions. Moreover, compared to the pristine device with a PCE of 13.28%, the PEAX-decorated PeSCs exhibited enhanced PCEs of 17.33% for the PEAI device and 17.18% for the PEABr device.
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Affiliation(s)
- Yuanyuan Zhang
- Department of Physics, Pukyong National University, Busan 48513, Republic of Korea
- Hybrid Interface Materials Global Frontier Research Group, Pusan National University, Busan 608-737, Republic of Korea
| | - Qiao Chen
- Department of Chemistry and Pharmaceutical Science, Qingdao Agricultural University, Qingdao 266109, PR China
| | - Hyun-Seock Yang
- Department of Physics, Pukyong National University, Busan 48513, Republic of Korea
- Hybrid Interface Materials Global Frontier Research Group, Pusan National University, Busan 608-737, Republic of Korea
| | - Danbi Kim
- Department of Physics, Pukyong National University, Busan 48513, Republic of Korea
- Hybrid Interface Materials Global Frontier Research Group, Pusan National University, Busan 608-737, Republic of Korea
| | - Insoo Shin
- Department of Physics, Pukyong National University, Busan 48513, Republic of Korea
| | - Bo Ram Lee
- Department of Physics, Pukyong National University, Busan 48513, Republic of Korea
| | - Joo Hyun Kim
- Department of Polymer Engineering, Pukyong National University, Busan 48513, Republic of Korea
| | - Doo Kyung Moon
- Department of Chemical Engineering, Konkuk University, Seoul 05029, Republic of Korea
| | - Kwang Ho Kim
- Hybrid Interface Materials Global Frontier Research Group, Pusan National University, Busan 608-737, Republic of Korea
| | - Sung Heum Park
- Department of Physics, Pukyong National University, Busan 48513, Republic of Korea
- Hybrid Interface Materials Global Frontier Research Group, Pusan National University, Busan 608-737, Republic of Korea
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Wen F, Tian L, Zhang W, Zhou X, Lin P, Zhou S, Du L, Hou T, Yu W, Yu L, Duan G, Peng C, Ma Z, Zhang M, Li H, Huang Y. High-temperature inverted annealing for efficient perovskite photovoltaics. CrystEngComm 2021. [DOI: 10.1039/d1ce00914a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
High-quality perovskite films with large grains and reduced surface defects were obtained via an inverted annealing process. Corresponding photovoltaic devices achieved a highest efficiency of 20.4% with a stabilized power conversion efficiency (PCE) of 19.8%.
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Affiliation(s)
- Fang Wen
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Liuwen Tian
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Wenfeng Zhang
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Xiangqing Zhou
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Puan Lin
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Shenghou Zhou
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Lin Du
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Tian Hou
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Wenjing Yu
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Lang Yu
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Gongtao Duan
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Changtao Peng
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Zhu Ma
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Meng Zhang
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Haijin Li
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Yuelong Huang
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
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7
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Fathi A, Jokar E, Lee Y, Diau EW. A Direct Mapping Approach to Understand Carrier Relaxation Dynamics in Varied Regions of a Polycrystalline Perovskite Film. Angew Chem Int Ed Engl 2020. [DOI: 10.1002/ange.202008305] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Amir Fathi
- Department of Applied Chemistry and Institute of Molecular Science National Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu 30010 Taiwan
| | - Efat Jokar
- Center for Emergent Functional Matter Science National Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu 30010 Taiwan
| | - Yuan‐Pern Lee
- Department of Applied Chemistry and Institute of Molecular Science National Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu 30010 Taiwan
- Center for Emergent Functional Matter Science National Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu 30010 Taiwan
| | - Eric Wei‐Guang Diau
- Department of Applied Chemistry and Institute of Molecular Science National Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu 30010 Taiwan
- Center for Emergent Functional Matter Science National Chiao Tung University 1001 Ta-Hsueh Rd. Hsinchu 30010 Taiwan
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8
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Fathi A, Jokar E, Lee YP, Diau EWG. A Direct Mapping Approach to Understand Carrier Relaxation Dynamics in Varied Regions of a Polycrystalline Perovskite Film. Angew Chem Int Ed Engl 2020; 59:19001-19005. [PMID: 32681616 DOI: 10.1002/anie.202008305] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/11/2020] [Indexed: 11/11/2022]
Abstract
We developed a direct mapping approach to overlay the image of a polycrystalline perovskite film obtained from the transient absorption microscope (TAM) with that from the scanning electron microscope (SEM). By mapping these imaging data pixel by pixel, we are able to observe the relaxation dynamics of the photo-generated charge carriers on varied regions of the film. The carrier relaxation dynamics contain a dominated single-exponential decay component owing to the recombination of charge carriers. The lifetime distribution of charge recombination shows a bimodal feature, for which the rapid and slow distributions are assigned as free and trapped carriers, respectively. The charge recombination was slower in the grain boundary (GB) region than in the grain interior (GI) region. The small grains have longer lifetimes than the large grains for the crystal size smaller than 500 nm. Therefore, GB with retarded charge recombination might play a positive role in a perovskite solar cell.
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Affiliation(s)
- Amir Fathi
- Department of Applied Chemistry and Institute of Molecular Science, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu, 30010, Taiwan
| | - Efat Jokar
- Center for Emergent Functional Matter Science, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu, 30010, Taiwan
| | - Yuan-Pern Lee
- Department of Applied Chemistry and Institute of Molecular Science, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu, 30010, Taiwan.,Center for Emergent Functional Matter Science, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu, 30010, Taiwan
| | - Eric Wei-Guang Diau
- Department of Applied Chemistry and Institute of Molecular Science, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu, 30010, Taiwan.,Center for Emergent Functional Matter Science, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu, 30010, Taiwan
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9
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Wang T, Lian G, Huang L, Zhu F, Cui D, Wang Q, Meng Q, Wong CP. MAPbI 3 Quasi-Single-Crystal Films Composed of Large-Sized Grains with Deep Boundary Fusion for Sensitive Vis-NIR Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:38314-38324. [PMID: 32805909 DOI: 10.1021/acsami.0c08674] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Perovskite single-crystal (SC) or quasi-single-crystal (QSC) films are promising candidates for excellent performance of photoelectric devices. However, it is still a great challenge to fabricate large-area continuous SC or QSC films with proper thickness. Herein, we propose a pressure-assisted high-temperature solvent-engineer (PTS) strategy to grow large-area continuous MAPbI3 QSC films with uniformly thin thickness and orientation. Dramatic grain growth (∼100 μm in the lateral dimension) and adequate boundary fusion are realized in them, vastly eliminating the grain boundaries. Thus, remarkable diminution of the trap density (ntrap: 7.43 × 1011 cm-3) determines a long carrier lifetime (τ2: 1.7 μs) and superior photoelectric performance of MAPbI3-based lateral photodetectors; for instance, an ultrahigh on/off ratio (>2.4 × 106, 2 V), great stability, fast response (283/306 μs), and high detectivity (1.41 × 1013) are achieved. The combination properties and performance of the QSC films surpass most of the reported MAPbI3. This effective approach in growing perovskite QSC films points out a novel way for perovskite-based optoelectronic devices with superior performance.
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Affiliation(s)
- Tao Wang
- State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Gang Lian
- State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Liping Huang
- State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Fei Zhu
- State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Deliang Cui
- State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Qilong Wang
- Key Laboratory for Special Functional Aggregated Materials of Education Ministry, School of Chemistry & Chemical Engineering, Shandong University, Jinan 250100, P. R. China
| | - Qingbo Meng
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Ching-Ping Wong
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
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Liao K, Yang JA, Li C, Li T, Hao F. Off-Stoichiometric Methylammonium Iodide Passivated Large-Grain Perovskite Film in Ambient Air for Efficient Inverted Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2019; 11:39882-39889. [PMID: 31577113 DOI: 10.1021/acsami.9b12829] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Hot-casting is a promising technique of depositing high-quality organic-inorganic hybrid perovskite thin films with large crystal grain size. Here, we reported the that the crystallinity and grain size of perovskite films could be systematically tailored by modulating the stoichiometry of the precursor solution in the hot-casting process under ambient condition with a relative humidity of 40%. It was found that a slight excess of methylammonium iodide (MAI) in the precursor solution could effectively compensate the MAI loss due to the high substrate temperature. A significant increase in the grain size and crystallinity of the perovskite film was observed together with a decrease in defect density and a carrier concentration enhancement in MAI-rich samples. The corresponding devices exhibited a notable increase in fill factor (up to 80.70%) and short-circuit current density. In addition, in MAI-deficient samples, an enrichment of PbI2 at the grain boundaries was directly observed by optical microscopy and laser confocal microscopy. Time-resolved photoluminescence spectroscopy revealed an increase in the charge carrier lifetime in the MAI-deficient samples, which was in line with the previous results with a small amount of excess PbI2 in the perovskite film. This work highlights a new strategy to prepare high-quality perovskite thin films with excellent crystal quality under ambient condition.
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Affiliation(s)
- Kejun Liao
- School of Materials and Energy , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
- Center for Applied Chemistry , University of Electronic Science and Technology of China , Chengdu 611731 , P. R. China
| | - Jin-An Yang
- School of Materials and Energy , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
- Center for Applied Chemistry , University of Electronic Science and Technology of China , Chengdu 611731 , P. R. China
| | - Chengbo Li
- School of Materials and Energy , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
- Center for Applied Chemistry , University of Electronic Science and Technology of China , Chengdu 611731 , P. R. China
| | - Tingshuai Li
- School of Materials and Energy , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
- Center for Applied Chemistry , University of Electronic Science and Technology of China , Chengdu 611731 , P. R. China
| | - Feng Hao
- School of Materials and Energy , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
- Center for Applied Chemistry , University of Electronic Science and Technology of China , Chengdu 611731 , P. R. China
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11
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Wang G, Liao L, Niu L, Chen L, Li W, Xu C, Mbeng E, Yao Y, Liu D, Song Q. Nuclei position-control and crystal growth-guidance on frozen substrates for high-performance perovskite solar cells. NANOSCALE 2019; 11:12108-12115. [PMID: 31165840 DOI: 10.1039/c9nr02777g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Nucleation and crystal growth are key stages for high-quality perovskite films that dominate the performance of perovskite solar cells. However, the position of nuclei in the films and the orientation of the crystal growth have not yet been intendedly controlled during their fabrication. In this study, we developed a method of spin-coating perovskite films on frozen substrates to control the position of the nuclei and the direction of the crystal growth at the same time. In this way, the position of the crystal nuclei and the growth orientation of the perovskite crystals in the perovskite films can be simultaneously controlled. A high-quality perovskite film with grains spanning vertically the entire film thickness has been obtained using this new method. And an efficient inverted planar solar cell (ITO/PEDOT:PSS/CH3NH3PbI3/PC61BM/BCP/Ag) with the highest power conversion efficiency of 17.14% and open-circuit voltage of 1.14 V has been achieved by using this technique.
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Affiliation(s)
- Gang Wang
- Institute for Clean Energy and Advanced Materials, School of Materials and Energy, Southwest University, Chongqing 400715, P. R. China. and Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, P. R. China
| | - Liping Liao
- Institute for Clean Energy and Advanced Materials, School of Materials and Energy, Southwest University, Chongqing 400715, P. R. China. and Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, P. R. China
| | - Lianbin Niu
- College of Physics and Electronics Engineering, Chongqing Normal University, Chongqing 401331, P. R. China
| | - Lijia Chen
- College of Physics and Electronics Engineering, Chongqing Normal University, Chongqing 401331, P. R. China
| | - Wenjun Li
- Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, P. R. China
| | - Cunyun Xu
- Institute for Clean Energy and Advanced Materials, School of Materials and Energy, Southwest University, Chongqing 400715, P. R. China. and Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, P. R. China
| | - Elisabeth Mbeng
- Institute for Clean Energy and Advanced Materials, School of Materials and Energy, Southwest University, Chongqing 400715, P. R. China. and Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, P. R. China
| | - Yanqing Yao
- Institute for Clean Energy and Advanced Materials, School of Materials and Energy, Southwest University, Chongqing 400715, P. R. China. and Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, P. R. China
| | - Debei Liu
- Institute for Clean Energy and Advanced Materials, School of Materials and Energy, Southwest University, Chongqing 400715, P. R. China. and Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, P. R. China
| | - Qunliang Song
- Institute for Clean Energy and Advanced Materials, School of Materials and Energy, Southwest University, Chongqing 400715, P. R. China. and Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, P. R. China
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12
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An efficient guanidinium isothiocyanate additive for improving the photovoltaic performances and thermal stability of perovskite solar cells. Electrochim Acta 2018. [DOI: 10.1016/j.electacta.2018.08.117] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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13
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Ma Y, Lee J, Liu Y, Hangoma PM, Park WI, Lim JH, Jung YK, Jeong JH, Park SH, Kim K. Synchronized-pressing fabrication of cost-efficient crystalline perovskite solar cells via intermediate engineering. NANOSCALE 2018; 10:9628-9633. [PMID: 29756134 DOI: 10.1039/c8nr01717d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A cost-effective fabrication method that can produce a remarkable enhancement in the device efficiency along with a reduction in the fabrication cost is one of the crucial requirements for the commercialization of perovskite-based solar cells. Here, we report a low-cost, printable, and highly effective synchronized-pressing annealing (SPA) method for inverted planar perovskite solar cells. In this method, two films are combined face-to-face for annealing, and separated as in a roll-to-roll process. Consequently, the SPA method provides two homogeneous highly crystalline MAPbI3 films with monolithic millimeter-scale crystalline grains by intermediate-induced crystallization engineering. The grains present a tendency of oriented growth along the <110> direction, parallel to the substrate, which leads to efficient charge transport. The IPSCs fabricated by the SPA method demonstrate a high efficiency of ∼17% with significantly enhanced photocurrents and fill factors. Moreover, the characteristics of both top and bottom devices are very similar, with nearly identical J-V curves and photoresponse spectra. As the SPA method is compatible with the printing technology for mass production, and as it can produce twin devices of high quality via one fabrication process, it can provide a remarkable reduction in the fabrication cost.
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Affiliation(s)
- Yongchao Ma
- Department of Physics, Pukyong National University, Busan, 608-737, South Korea.
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14
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Yang F, Kapil G, Zhang P, Hu Z, Kamarudin MA, Ma T, Hayase S. Dependence of Acetate-Based Antisolvents for High Humidity Fabrication of CH 3NH 3PbI 3 Perovskite Devices in Ambient Atmosphere. ACS APPLIED MATERIALS & INTERFACES 2018; 10:16482-16489. [PMID: 29733567 DOI: 10.1021/acsami.8b02554] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
High-efficiency perovskite solar cells (PSCs) need to be fabricated in the nitrogen-filled glovebox by the atmosphere-controlled crystallization process. However, the use of the glovebox process is of great concern for mass level production of PSCs. In this work, notable efficient CH3NH3PbI3 solar cells can be obtained in high humidity ambient atmosphere (60-70% relative humidity) by using acetate as the antisolvent, in which dependence of methyl, ethyl, propyl, and butyl acetate on the crystal growth mechanism is discussed. It is explored that acetate screens the sensitive perovskite intermediate phases from water molecules during perovskite film formation and annealing. It is revealed that relatively high vapor pressure and high water solubility of methyl acetate (MA) leads to the formation of highly dense and pinhole free perovskite films guiding to the best power conversion efficiency (PCE) of 16.3% with a reduced hysteresis. The devices prepared using MA showed remarkable shelf life stability of more than 80% for 360 h in ambient air condition, when compared to the devices fabricated using other antisolvents with low vapor pressure and low water solubility. Moreover, the PCE was still kept at 15.6% even though 2 vol % deionized water was added in the MA for preparing the perovskite layer.
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Affiliation(s)
- Fu Yang
- Kyushu Institute of Technology , 204 Hibikino Wakamatsu-ku , Kitakyushu 808-0196 , Japan
| | - Gaurav Kapil
- Kyushu Institute of Technology , 204 Hibikino Wakamatsu-ku , Kitakyushu 808-0196 , Japan
| | - Putao Zhang
- Kyushu Institute of Technology , 204 Hibikino Wakamatsu-ku , Kitakyushu 808-0196 , Japan
| | - Zhaosheng Hu
- Kyushu Institute of Technology , 204 Hibikino Wakamatsu-ku , Kitakyushu 808-0196 , Japan
| | | | - Tingli Ma
- Kyushu Institute of Technology , 204 Hibikino Wakamatsu-ku , Kitakyushu 808-0196 , Japan
| | - Shuzi Hayase
- Kyushu Institute of Technology , 204 Hibikino Wakamatsu-ku , Kitakyushu 808-0196 , Japan
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15
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Dong N, Fu X, Lian G, Lv S, Wang Q, Cui D, Wong CP. Solvent-Assisted Thermal-Pressure Strategy for Constructing High-Quality CH 3NH 3PbI 3- xCl x Films as High-Performance Perovskite Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:8393-8398. [PMID: 29488378 DOI: 10.1021/acsami.8b00425] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
High-quality CH3NH3PbI3-xCl x films have attracted research interests in photoelectric devices because of their improved carrier diffusion length and charge mobility. Herein, a solvent-assisted thermal-pressure strategy is developed to promote the secondary growth of perovskite grains in the films. Highly oriented perovskite films are then obtained with large-sized grains (5-10 μm). As a consequence, the photodetectors based on the high-quality CH3NH3PbI3- xCl x films exhibit enhanced ophtoelectrical performance, including high on/off ratio (>2.1 × 104), fast response time (54/63 μs), and high detectivity (∼1.3 × 1012). This work suggests an effective approach for high-quality perovskite films, which will be promising candidates for other high-efficiency photoelectric devices.
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Affiliation(s)
- Ning Dong
- State Key Lab of Crystal Materials, Shandong University , Jinan 250100 , P.R. China
| | - Xianwei Fu
- State Key Lab of Crystal Materials, Shandong University , Jinan 250100 , P.R. China
| | - Gang Lian
- State Key Lab of Crystal Materials, Shandong University , Jinan 250100 , P.R. China
- School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
| | - Song Lv
- State Key Lab of Crystal Materials, Shandong University , Jinan 250100 , P.R. China
| | - Qilong Wang
- Key Laboratory for Special Functional Aggregated Materials of Education Ministry, School of Chemistry & Chemical Engineering , Shandong University , Jinan 250100 , P.R. China
| | - Deliang Cui
- State Key Lab of Crystal Materials, Shandong University , Jinan 250100 , P.R. China
| | - Ching-Ping Wong
- School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
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16
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Fu X, Dong N, Lian G, Lv S, Zhao T, Wang Q, Cui D, Wong CP. High-Quality CH 3NH 3PbI 3 Films Obtained via a Pressure-Assisted Space-Confined Solvent-Engineering Strategy for Ultrasensitive Photodetectors. NANO LETTERS 2018; 18:1213-1220. [PMID: 29389136 DOI: 10.1021/acs.nanolett.7b04809] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
High-quality organic-inorganic hybrid perovskite films are crucial for excellent performance of photoelectric devices. Herein, we demonstrate a pressure-assisted space-confined solvent-engineering strategy to grow highly oriented, pinhole-free thin films of CH3NH3PbI3 with large-scale crystalline grains, high smoothness, and crystalline fusion on grain boundaries. These single-crystalline grains vertically span the entire film thickness. Such a film feature dramatically reduces recombination loss and then improves the transport property of charge carriers in the films. Consequently, the photodetector devices, based on the high-quality CH3NH3PbI3 films, exhibit high photocurrent (105 μA under 671 nm laser with a power density of 20.6 mW/cm2 at 10 V), good stability, and, especially, an ultrahigh on/off ratio (Ilight/Idark > 2.2 × 104 under an incident light of 20.6 mW/cm2). These excellent performances indicate that the high-quality films will be potential candidates in other CH3NH3PbI3-based photoelectric devices.
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Affiliation(s)
| | | | - Gang Lian
- School of Materials Science and Enigneering, Georgia Institute of Technology , Atlanta, Georgia 30332, United States
| | | | | | | | | | - Ching-Ping Wong
- School of Materials Science and Enigneering, Georgia Institute of Technology , Atlanta, Georgia 30332, United States
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