Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography

Nanoscale Channel Gate-Tunable Diodes Obtained by Asymmetric Contact and Adhesion Lithography on Fluoropolymers

Adhesion lithography offers to fabrication of coplanar asymmetric nanogap electrodes with a low-cost and facile process. In this study, a gate-tunable diode with coplanar asymmetric nanogap is fabricated using adhesion lithography. A fluoropolymer material is introduced to the adhesion lithography process to ensure a manufacturing patterning process yield as high as 96.7%. The asymmetric electrodes formed a built-in potential, leading to rectifying behavior. The coplanar electrode structure allowed the use of a gate electrode in vertical contact with the channel, resulting in gate-tunable diode characteristics. The nanoscale channel induced a high current density (3.38 × 10-7  A∙cm-1 ), providing a high rectification ratio (1.67 × 105  A∙A-1 ). This rectifier diode is confirmed to operate with pulsed input signals and suggests the gate-tunability of nanogap diodes.

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.

Characteristics of collection and inactivation of virus in air flowing inside a winding conduit equipped with 280 nm deep UV-LEDs

A general-purpose virus inactivation unit that can inactivate viruses was developed using deep ultraviolet (DUV) LEDs that emit DUV rays with a wavelength of 280 nm. The inside of the virus inactivation unit is a rectangular conduit with a sharp turn of 180° (sharp-turned rectangular conduit). Virus inactivation is attempted by directly irradiating the air passing through the conduit with DUV rays. The flow characteristics of air and virus particles inside the virus inactivation unit were investigated using numerical simulations. The air was locally accelerated at the sharp turn parts and flowed along the partition plate in the sharp-turned rectangular conduit. The aerosol particles moving in the sharp-turned rectangular conduit were greatly bent in orbit at the sharp turn parts, and then rapidly approached the partition plate at the lower part of the conduit. Consequently, many particles collided with the partition plates behind the sharp-turn parts. SARS-CoV-2 virus was nebulized in the virus inactivation unit, and the RNA concentration and virus inactivation rate with and without the emission of DUV-LEDs were measured in the experiment. The concentration of SARS-CoV-2 RNA was reduced to 60% through DUV-LED irradiation. In addition, SARS-CoV-2 passing through the virus inactivation unit was inactivated below the detection limit by the emission of DUV-LEDs. The virus inactivation rate and the value of the detection limit corresponded to 99.38% and 35.36 TCID₅₀/mL, respectively.

Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN)

Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities of existing p-type semiconducting materials that are compatible with low-temperature, flexible, substrate-friendly processes. Herein, we report on CuSCN Schottky diodes, where the semiconductor is processed from solution, featuring coplanar Al-Au nanogap electrodes (<15 nm), patterned via adhesion lithography. The abundant CuSCN material is doped with the molecular p-type dopant fluorofullerene C₆₀F₄₈ to improve the diode's operating characteristics. Rectifier circuits fabricated with the doped CuSCN/C₆₀F₄₈ diodes exhibit a 30-fold increase in the cutoff frequency as compared to pristine CuSCN diodes (from 140 kHz to 4 MHz), while they are able to deliver output voltages of >100 mV for a V_IN = ±5 V at the commercially relevant frequency of 13.56 MHz. The enhanced diode and circuit performance is attributed to the improved charge transport across CuSCN induced by C₆₀F₄₈. The ensuing diode technology can be used in flexible complementary circuits targeting low-energy-budget applications for the emerging internet of things device ecosystem.

Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors

Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 10¹⁸ cm^-3. The p-type CuSCN layer was then deposited onto an n-type gallium nitride (GaN) layer to form a prototypical ultraviolet-based photodetector. X-ray photoelectron spectroscopy further demonstrated the interface electronic structures of the heterojunction, confirming a favorable alignment for holes and electrons transport. The ensuing p-CuSCN/n-GaN heterojunction photodetector exhibited a turn-on voltage of 2.3 V, a responsivity of 1.35 A/W at -1 V, and an external quantum efficiency of 5.14 × 10²% under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.

Scalable Fabrication of Metallic Nanogaps at the Sub-10 nm Level

Metallic nanogaps with metal-metal separations of less than 10 nm have many applications in nanoscale photonics and electronics. However, their fabrication remains a considerable challenge, especially for applications that require patterning of nanoscale features over macroscopic length-scales. Here, some of the most promising techniques for nanogap fabrication are evaluated, covering established technologies such as photolithography, electron-beam lithography (EBL), and focused ion beam (FIB) milling, plus a number of newer methods that use novel electrochemical and mechanical means to effect the patterning. The physical principles behind each method are reviewed and their strengths and limitations for nanogap patterning in terms of resolution, fidelity, speed, ease of implementation, versatility, and scalability to large substrate sizes are discussed.

Sub-Picosecond Nanodiodes for Low-Power Ultrafast Electronics

The tradeoff between ultrahigh speed and low power is a dominant challenge in continuously improving modern electronics. Fundamental electronic devices with ultrafast response are highly desired in low-power electronics. However, conventional semiconductor electronic devices now near the speed limit from the physical roadblocks including short-channel effect, restricted carrier velocity, and heat death. Currently emerging electronic devices also face formidable difficulties to achieve high-speed performance at low operating voltage without heat disturbance. Here, a novel fabricated coplanar tip-to-edge semiconductor-free nanostructure with asymmetric sub-10 nm air channel is reported, stimulating electric-field accelerated scattering-free transport of electrons and resulting in ultrafast response of record sub-picoseconds at a low turn-on voltage around 0.7 V. Simulation results show a typical electrical response down to 64 fs, which is ≈10³ times faster than that of conventional semiconductor electronic devices. The coplanar asymmetric nanostructure allows a high rectifying ratio up to 10⁶ which is superior to that of the most promising 2D semiconducting nanodiodes. In addition, heat death is overcome due to the inherent advantages from the novel nanostructure and underlying working mechanism. The intriguing nanodiodes will attract broadly interests in electronics due to their potential as rudimentary building blocks in ultrafast electronic integrated circuits.

Massively Parallel Arrays of Size-Controlled Metallic Nanogaps with Gap-Widths Down to the Sub-3-nm Level

Metallic nanogaps (MNGs) are fundamental components of nanoscale photonic and electronic devices. However, the lack of reproducible, high-yield fabrication methods with nanometric control over the gap-size has hindered practical applications. A patterning technique based on molecular self-assembly and physical peeling is reported here that allows the gap-width to be tuned from more than 30 nm to less than 3 nm. The ability of the technique to define sub-3-nm gaps between dissimilar metals permits the easy fabrication of molecular rectifiers, in which conductive molecules bridge metals with differing work functions. A method is further described for fabricating massively parallel nanogap arrays containing hundreds of millions of ring-shaped nanogaps, in which nanometric size control is maintained over large patterning areas of up to a square centimeter. The arrays exhibit strong plasmonic resonances under visible light illumination and act as high-performance substrates for surface-enhanced Raman spectroscopy, with high enhancement factors of up to 3 × 10⁸ relative to thin gold films. The methods described here extend the range of metallic nanostructures that can be fabricated over large areas, and are likely to find many applications in molecular electronics, plasmonics, and biosensing.

Enhanced performance of ZnO nanorod array/CuSCN ultraviolet photodetectors with functionalized graphene layers

Facile, convenient and low-cost processes, including a chemical hydrothermal method and impregnation technique, were demonstrated to fabricate a self-powered ZnO nanorod array/CuSCN/reduced graphene oxide (rGO) ultraviolet photodetector. ZnO nanorods (NRs) were fully filled and encased by the CuSCN layer, in which CuSCN acts as the primary hole-transport layer and an electron reflection layer, blocking the electron transfer towards the Au electrode and reducing the electron-hole pair recombination. After annealing, this encapsulated structure further reduces the surface state defects of ZnO NRs, which can isolate the electron exchange with oxygen in the air, dramatically reducing the rise and fall time; it also forms a p-n junction, providing a built-in electric field to improve the photoresponse without applying external power. The rGO layer was coated on the surface of CuSCN as the secondary hole-transport layer and then annealed, which could effectively block Au from entering CuSCN and contacting ZnO along cracks and holes during vapor deposition, avoiding the formation of leakage channels. Furthermore, due to the ultra-high carrier mobility and the increase in work function after Au doping, the functionalized graphene could reduce the valence band shift, which is beneficial to enhance hole transport. Meanwhile, rGO obstructs the undesired barrier formed by electrical potential-induced reaction of Au with thiocyanate anions. Finally, the ZnO NR/CuSCN/rGO ultraviolet photodetector exhibits a significant enhancement in device performance (responsivity: 18.65 mA W^-1 at 375 nm under 65 mW cm^-2 illumination, rectification ratio: 5690 at ±1 V), which is better that of than ZnO NR/CuSCN structure (10.88 mA W^-1, 10.22 at ±1 V) and maintains the 100 ms response time.

Study of aerodynamic focusing lens stacks (ALS) for long focal length aerosol-assisted focused chemical vapor deposition (AAFCVD)

Mask-free direct printing can alleviate the high cost and high consumption involved in photo-lithography for chip processing. Most of their technical routes are based on the traditional short focal length nozzles, which is suffered from higher probability of nozzle retardation or clogging as well as the higher mechanical burdens. While aerosol-assisted chemical vapor deposition (AACVD) has better deposition adaptability but usually lack of focused printing. In this study, a system that combines of long focal length ALS with AACVD, so called AAFCVD printing system has been developed. The single-point printing capability and aerosol precursor adaptability were verified, and the relationship between the single spot printing performance and the chemical reaction mechanisms were studied. Furthermore, a unique carbon injection effect brought by ALS was discovered. Finally, the linear graphics printing performances of the system were evaluated. This system is expected to become a new generation of high-performance mask-free printing system for chip manufacturing.

A new generation system so called AAFCVD printing system has been developed. It is a mask-free printing system with longer focal length and compatibility for AACVD.

Electronic Structure and Surface Properties of Copper Thiocyanate: A Promising Hole Transport Material for Organic Photovoltaic Cells

Considering the significance of hexagonal copper thiocyanate (β-CuSCN) in several optoelectronic technologies and applications, it is essential to investigate its electronic structure and surface properties. Herein, we have employed density functional theory (DFT) calculations to characterise the band structure, density of states, and the energy-dependent X-ray photoelectron (XPS) valence band spectra at variable excitation energies of β-CuSCN. The surface properties in the absence and presence of dimethyl sulfoxide (DMSO), a solvent additive for improving perovskite solar cells' power conversion efficiency, have also been systematically characterised. β-CuSCN is shown to be an indirect band gap material (Eg = 3.68 eV) with the valence band edge demonstrated to change from being dominated by Cu-3d at soft X-ray ionisation photon energies to Cu-3p at hard X-ray ionisation photon energies. The adsorption energy of dimethyl sulfoxide (DMSO) on the (100) and (110) β-CuSCN surfaces is calculated at -1.12 and -0.91 eV, respectively. The presence of DMSO on the surface is shown to have a stabilisation effect, lowering the surface energy and tuning the work function of the β-CuSCN surfaces, which is desirable for organic solar cells to achieve high power conversion efficiencies.

Ultrasensitive, Superhigh Signal-to-Noise Ratio, Self-Powered Solar-Blind Photodetector Based on n-Ga2O3/p-CuSCN Core-Shell Microwire Heterojunction

Solar-blind photodetectors have captured intense attention due to their high significance in ultraviolet astronomy and biological detection. However, most of the solar-blind photodetectors have not shown extraordinary advantages in weak light signal detection because the forewarning of low-dose deep-ultraviolet radiation is so important for the human immune system. In this study, a high-performance solar-blind photodetector is constructed based on the n-Ga₂O₃/p-CuSCN core-shell microwire heterojunction by a simple immersion method. In comparison with the single device of the Ga₂O₃ and CuSCN, the heterojunction photodetector demonstrates an enhanced photoelectric performance with an ultralow dark current of 1.03 pA, high photo-to-dark current ratio of 4.14 × 10⁴, and high rejection ratio (R₂₅₄/R₃₆₅) of 1.15 × 10⁴ under a bias of 5 V. Excitingly, the heterostructure photodetector shows high sensitivity to the weak signal (1.5 μW/cm²) of deep ultraviolet and high-resolution detection to the subtle change of signal intensity (1.0 μW/cm²). Under the illumination with 254 nm light at 5 V, the photodetector shows a large responsivity of 13.3 mA/W, superb detectivity of 9.43 × 10¹¹ Jones, and fast response speed with a rise time of 62 ms and decay time of 35 ms. Additionally, the photodetector can work without an external power supply and has specific solar-blind spectrum selectivity as well as excellent stability even through 1 month of storage. Such prominent photodetection, profited by the novel geometric construction and the built-in electric field originating from the p-n heterojunction, meets greatly well the "5S" requirements of the photodetector for practical application.

Digital image analysis for measuring nanogap distance produced by adhesion lithography

A simple digital image analysis for measuring nanogap distance produced by adhesion lithography is proposed. Adhesion lithography produces metal electrodes with sub-15 nm undulated space and μm to mm scale width without using electron beam lithography. Although the process has been rapidly improved in recent years, there has been no generalized procedure to evaluate the nanogap distance. In this study, we propose a procedure to evaluate a nanogap electrode with large width/gap distance ratios (>1000). The procedure is to determine the average distance of nanogap space from the area and the perimeter of the space by the analysis of the grayscale image. This procedure excludes any arbitrariness of the estimation and gives quantitative comparison of nanogap electrodes produced by different processes.

Chemical Control of Electronic Coupling between a Ruthenium Complex and Gold Electrode for Resonant Tunneling Conduction

Current-voltage (I-V) nonlinearity is essential for information processing in molecular electronics. We used a nanoparticle bridge junction to investigate the effect of electronic coupling between a Ru complex and electrodes on nonlinear electrical properties. Two types of molecular layers, in which the Ru complex forms different chemical bondings to the electrode, were used for electrical measurements. The chemical bond and the surface potential of the Ru complex on Au electrodes were examined by X-ray photoelectron spectroscopy, infrared ray reflection absorbance spectroscopy and Kelvin probe force microscopy, respectively. The device, in which the Ru complex is directly bound to the Au electrode, indicated the nonlinear I-V characteristics with zero-bias conductance because of the direct tunneling conduction. Another device fabricated by inserting a spacer molecule between the Ru complex and the Au electrode realized nonlinear I-V characteristics with a clear threshold voltage and little zero-bias conductance. The I-V curves were well fitted by the resonant tunneling conduction model. The present results show the significance of controlling the electronic coupling for nonlinear I-V characteristics.

Isovalent bismuth ion-induced growth of highly-disperse Sb2S3 nanorods and their composite with p-CuSCN for self-powered photodetectors

Trace amounts of Bi ions are able to cause the growth of highly-disperse, thin Sb₂S₃ nanorods, which exhibit potential in UV-visible self-powered photodetectors when coupled with p-CuSCN crystal clusters.

UV Photodetectors Based on BiOCl Nanosheet Arrays: The Effects of Morphologies and Electrode Configurations

A facile chemical bath method is adopted to grow bismuth oxychloride (BiOCl) nanosheet arrays on a piece of Cu foil (denoted as BiOCl-Cu) and isolated BiOCl nanosheets are collected by ultrasonication. A self-supporting BiOCl film is obtained by the removal of Cu foil. Photodetectors (PDs) based on these BiOCl materials are assembled and the effects of morphologies and electrode configurations on the photoelectric performance of these PDs are examined. The BiOCl nanosheet PD achieves high responsivities in the spectral range from 250 to 350 nm, while it presents quite a small photocurrent and slow response speed. The BiOCl film PD yields low photocurrents and near-unity on-off ratios, demonstrating poor photoelectric performance. The photocurrent of the BiOCl-Cu PD with both electrodes on the BiOCl film is much higher than those of these above-mentioned PDs, and the response times are fast. Meanwhile, the BiOCl-Cu PD with separate electrodes on the BiOCl film and Cu foil achieves even higher photocurrents and presents a self-powering characteristic, depicting the improved photodetecting performances induced by the specific morphology and distinct electrode configuration. These results would promote the applications of BiOCl nanostructures in the photoelectric devices.