Hydrogen-Assisted Growth of Large-Area Continuous Films of MoS2 on Monolayer Graphene

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Excitonic Rydberg States in a Trilayer to Monolayer H2-Aided CVD-Grown Large-Area MoS2 Film with Excellent UV to Visible Broad Band Photodetection Applications

The diverse nature of optoelectronic properties of few-layer or monolayer MoS2 is generally dominated by A and B excitons. Occasionally, strong Coulombic interactions within the 2D monolayer led to the creation of hydrogen-like Rydberg states of excitons in MoS2 similar to other 2D monolayers. In this paper, a simple process is used to convert trilayer MoS2 films to a monolayer by introducing H2 gas during chemical vapor deposition. Remarkably, alongside the usual A, B excitons, and A- trion, the appearance of the Rydberg states is evidenced by photoluminescence spectra even at room temperature; also, there is an increase in their areal percentage with an increase in H2 content. The s-type excited Rydberg states up to the fourth order (n = 5) and third order (n = 4) of A and B excitons, respectively, have been probed from the photoluminescence spectra at 93 K. Unprecedentedly, the first-order derivative of room-temperature photocurrent spectrum reveals the Rydberg states concurrently and elaboratively. Furthermore, the large-area MoS2 films exhibit photoresponse in a broad UV to visible region with excellent photosensitivity (∼102) toward both UV and visible lights. Not only does this provide a profound understanding of the excitonic Rydberg states but also highlights the considerable potential of large-area monolayer MoS2 overcoming the difficulty of tiny flake-related 2D device endeavors.

MoS2 Nanoflowers Grown on Plasma-Induced W-Anchored Graphene for Efficient and Stable H2 Production Through Seawater Electrolysis

Herein, it is found that 3D transition metal dichalcogenide (TMD)-MoS2 nanoflowers-grown on 2D tungsten oxide-anchored graphene nanosheets (MoS2 @W-G) functions as a superior catalyst for the hydrogen evolution reaction (HER) under both acidic and alkaline conditions. The optimized weight ratio of MoS2 @W-G (MoS2 :W-G/1.5:1) in 0.5 M H2 SO4 achieves a low overpotential of 78 mV at 10 mA cm-2 , a small Tafel slope of 48 mV dec-1 , and a high exchange current density (0.321 mA cm⁻2 ). Furthermore, the same MoS2 @W-G composite exhibits stable HER performance when using real seawater, with Faradaic efficiencies of 96 and 94% in acidic and alkaline media, respectively. Density functional theory calculations based on the hybrid MoS2 @W-G structure model confirm that suitable hybridization of 3D MoS2 and 2D W-G nanosheets can lower the hydrogen adsorption: Gibbs free energy (∆GH* ) from 1.89 eV for MoS2 to -0.13 eV for the MoS2 @W-G composite. The excellent HER activity of the 3D/2D hybridized MoS2 @W-G composite arises from abundance of active heterostructure interfaces, optimizing the electrical configuration, thereby accelerating the adsorption and dissociation of H2 O. These findings suggest a new approach for the rational development of alternative 3D/2D TMD/graphene electrocatalysts for HER applications using seawater.

Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective

Researchers have found various families of two-dimensional (2D) materials and associated heterostructures through detailed theoretical work and experimental efforts. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from micro to nano and pico scale. Two-dimensional van der Waals (vdW) materials and their heterostructures can be obtained to enable high-frequency broadband through a sophisticated combination of stacking order, orientation, and interlayer interactions. These heterostructures have been the focus of much recent research due to their potential applications in optoelectronics. Growing the layers of one kind of 2D material over the other, controlling absorption spectra via external bias, and external doping proposes an additional degree of freedom to modulate the properties of such materials. This mini review focuses on current state-of-the-art material design, manufacturing techniques, and strategies to design novel heterostructures. In addition to a discussion of fabrication techniques, it includes a comprehensive analysis of the electrical and optical properties of vdW heterostructures (vdWHs), particularly emphasizing the energy-band alignment. In the following sections, we discuss specific optoelectronic devices, such as light-emitting diodes (LEDs), photovoltaics, acoustic cavities, and biomedical photodetectors. Furthermore, this also includes a discussion of four different 2D-based photodetector configurations according to their stacking order. Moreover, we discuss the challenges that remain to be addressed in order to realize the full potential of these materials for optoelectronics applications. Finally, as future perspectives, we present some key directions and express our subjective assessment of upcoming trends in the field.

Space-Confined One-Step Growth of 2D MoO2 /MoS2 Vertical Heterostructures for Superior Hydrogen Evolution in Alkaline Electrolytes

2D material-based heterostructures are constructed by stacking or spicing individual 2D layers to create an interface between them, which have exotic properties. Here, a new strategy for the in situ growth of large numbers of 2D heterostructures on the centimeter-scale substrate is developed. In the method, large numbers of 2D MoS₂ , MoO₂ , or their heterostructures of MoO₂ /MoS₂ are controllably grown in the same setup by simply tuning the gap distance between metal precursor and growth substrate, which changes the concentration of metal precursors feed. A lateral force microscope is used first to identify the locations of each material in the heterostructures, which have MoO₂ on the top of MoS₂ . Noteworthy, the creation of a clean interface between atomic thin MoO₂ (metallic) and MoS₂ (semiconducting) results in a different electronic structure compared with pure MoO₂ and MoS₂ . Theoretical calculations show that the charge redistribution at such an interface results in an improved HER performance on the MoO₂ /MoS₂ heterostructures, showing an overpotential of 60 mV at 10 mA cm^-2 and a Tafel slope of 47 mV dec^-1 . This work reports a new strategy for the in situ growth of heterostructures on large-scale substrates and provides platforms to exploit their applications.

Developing Graphene-Based Moiré Heterostructures for Twistronics

Graphene-based moiré heterostructures are strongly correlated materials, and they are considered to be an effective platform to investigate the challenges of condensed matter physics. This is due to the distinct electronic properties that are unique to moiré superlattices and peculiar band structures. The increasing research on strongly correlated physics via graphene-based moiré heterostructures, especially unconventional superconductors, greatly promotes the development of condensed matter physics. Herein, the preparation methods of graphene-based moiré heterostructures on both in situ growth and assembling monolayer 2D materials are discussed. Methods to improve the quality of graphene and optimize the transfer process are presented to mitigate the limitations of low-quality graphene and damage caused by the transfer process during the fabrication of graphene-based moiré heterostructures. Then, the topological properties in various graphene-based moiré heterostructures are reviewed. Furthermore, recent advances regarding the factors that influence physical performances via a changing twist angle, the exertion of strain, and regulation of the dielectric environment are presented. Moreover, various unique physical properties in graphene-based moiré heterostructures are demonstrated. Finally, the challenges faced during the preparation and characterization of graphene-based moiré heterostructures are discussed. An outlook for the further development of moiré heterostructures is also presented.

Development of a novel theory of pressure-induced nucleation in supercritical carbon dioxide

Nucleation was the basis of the fabrication of two-dimensional materials in the bottom-up methods such as chemical vapor deposition and atomic layer deposition etc. Supercritical fluid deposition (SCFD) might provide...

A Review on Chemical Vapour Deposition of Two-Dimensional MoS2 Flakes

Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.

Time-Resolved Observation of Hole Tunneling in van der Waals Multilayer Heterostructures

We reported a time-resolved study of quantum-mechanical tunneling of holes between two MoSe₂ monolayers that are separated by a monolayer WS₂ energy barrier. Four-layer heterostructures of MoSe₂/WS₂/MoSe₂/graphene, as well as control samples, were fabricated by mechanical exfoliation and dry transfer techniques. To time-resolve the hole tunneling process, an ultrashort laser pulse was used to excite electrons and holes in both MoSe₂ layers. By utilization of the graphene layer to eliminate carriers in the third MoSe₂ layer, the first MoSe₂ layer is selectively populated with the holes, which then tunnel to the third MoSe₂ layer. By monitoring decay of the hole population with an ultrashort probe pulse, we measure a hole tunneling time of about 20 ps, which is found to slightly increase with the injected carrier density. Besides the fundamental interests of real-time observation of the quantum-mechanical tunneling effect across a nanometer barrier, these results provide quantitative understanding on tunneling mechanisms of charge transfer in van der Waals heterostructures, which is useful for designing sophisticated van der Waals multilayer heterostructures.

Substrate-Induced Variances in Morphological and Structural Properties of MoS2 Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO2

In this work, we report the impact of substrate type on the morphological and structural properties of molybdenum disulfide (MoS₂) grown by chemical vapor deposition (CVD). MoS₂ synthesized on a three-dimensional (3D) substrate, that is, SiO₂, in response to the change of the thermodynamic conditions yielded different grain morphologies, including triangles, truncated triangles, and circles. Simultaneously, MoS₂ on graphene is highly immune to the modifications of the growth conditions, forming triangular crystals only. We explain the differences between MoS₂ on SiO₂ and graphene by the different surface diffusion mechanisms, namely, hopping and gas-molecule-collision-like mechanisms, respectively. As a result, we observe the formation of thermodynamically favorable nuclei shapes on graphene, while on SiO₂, a full spectrum of domain shapes can be achieved. Additionally, graphene withstands the growth process well, with only slight changes in strain and doping. Furthermore, by the application of graphene as a growth substrate, we realize van der Waals epitaxy and achieve strain-free growth, as suggested by the photoluminescence (PL) studies. We indicate that PL, contrary to Raman spectroscopy, enables us to arbitrarily determine the strain levels in MoS₂.

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.

Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications

Large-area and high-quality two-dimensional crystals are the basis for the development of the next-generation electronic and optical devices. The synthesis of two-dimensional materials in wafer scales is the first critical step for future technology uptake by the industries; however, currently presented as a significant challenge. Substantial efforts have been devoted to producing atomically thin two-dimensional materials with large lateral dimensions, controllable and uniform thicknesses, large crystal domains and minimum defects. In this review, recent advances in synthetic routes to obtain high-quality two-dimensional crystals with lateral sizes exceeding a hundred micrometres are outlined. Applications of the achieved large-area two-dimensional crystals in electronics and optoelectronics are summarised, and advantages and disadvantages of each approach considering ease of the synthesis, defects, grain sizes and uniformity are discussed.

Direct Growth of Continuous and Uniform MoS2 Film on SiO2/Si Substrate Catalyzed by Sodium Sulfate

Because of its unique electronic band structure, molybdenum disulfide (MoS₂) has been regarded as a star semiconducting material. However, direct growth of continuous and high-quality MoS₂ films on SiO₂/Si substrates is still very challenging. Here, we report a facile chemical vapor deposition (CVD) method based on synergistic modulation of precursor and Na₂SO₄ catalysis, realizing the centimeter scale growth of a continuous MoS₂ film on SiO₂/Si substrates. The as-grown MoS₂ film had an excellent spatial homogeneity and crystal quality, with an edge length of the composite domain as large as 632 μm. Both experimental and theoretical results proved that Na tended to bond with SiO₂ substrates rather than to interfere with as-grown MoS₂. Thus, they showed decent and uniform electrical performance, with electron mobilities as high as 5.9 cm² V^-1 s^-1_. We believe our method will pave a new way for MoS₂ toward real application in modern electronics.

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS₂) is grown on the SiO₂/Si substrate by atmospheric pressure chemical vapor deposition (APCVD), and the MoS₂ is systematically characterized by the high-resolution optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, and the field emission scanning electron microscopy, which can confirm that the MoS₂ is a monolayer. Then, the monolayer MoS₂ is selected as the channel material to complete the fabrication process of the back-gate field effect transistor (FET). Finally, the electrical characteristics of the monolayer MoS₂-based FET are tested to obtain the electrical performance. The switching ratio is 10³, the field effect mobility is about 0.86 cm²/Vs, the saturation current is 2.75 × 10^-7 A/μm, and the lowest gate leakage current is 10^-12 A. Besides, the monolayer MoS₂ can form the ohmic contact with the Ti/Au metal electrode. Therefore, the electrical performances of monolayer MoS₂-based FET are relatively poor, which requires the further optimization of the monolayer MoS₂ growth process. Meanwhile, it can provide the guidance for the application of monolayer MoS₂-based FETs in the future low-power optoelectronic integrated circuits.

Postgrowth Substitutional Tin Doping of 2D WS2 Crystals Using Chemical Vapor Deposition

Doping of two-dimensional materials provides them tunable physical properties and widens their applications. Here, we demonstrate the postgrowth doping strategy in monolayer and bilayer tungsten disulfide (WS₂) crystals, which utilizes a metal exchange mechanism, whereby Sn atoms become substitutional dopants in the W sites by energetically favorable replacement. We achieve this using chemical vapor deposition techniques, where high-quality grown WS₂ single crystals are first grown and then subsequently reacted with a SnS precursor. Thermal control of the exchange doping mechanism is revealed, indicating that a sufficiently high enough temperature is required to create the S vacancies that are the initial binding sites for the SnS precursor and metal exchange occurrence. This results in a better control of dopant distribution compared to the tradition all-in-one approach, where dopants are added during the growth phase. The Sn dopants exhibit an n-type doping behavior in the WS₂ layers based on the decreased threshold voltage obtained from transistor device measurements. Annular dark-field scanning transmission electron microscopy shows that in bilayer WS₂ the Sn doping occurs only in the top layer, creating vertical heterostructures with atomic layer doping precision. This postgrowth modification opens up ways to selectively dope one layer at a time and construct mixed stoichiometry vertical heterojunctions in bilayer crystals.

High Photoresponsivity in Ultrathin 2D Lateral Graphene:WS2:Graphene Photodetectors Using Direct CVD Growth

We show that reducing the degree of van der Waals overlapping in all 2D ultrathin lateral devices composed of graphene:WS₂:graphene leads to significant increase in photodetector responsivity. This is achieved by directly growing WS₂ using chemical vapor deposition (CVD) in prepatterned graphene gaps to create epitaxial interfaces. Direct-CVD-grown graphene:WS₂:graphene lateral photodetecting transistors exhibit high photoresponsivities reaching 121 A/W under 2.7 × 10⁵ mW/cm² 532 nm illumination, which is around 2 orders of magnitude higher than similar devices made by the layer-by-layer transfer method. The photoresponsivity of our direct-CVD-grown device shows negative correlation with illumination power under different gate voltages, which is different from similar devices made by the transfer method. We show that the high photoresponsivity is due to the lowering of effective Schottky barrier height by improving the contact between graphene and WS₂. Furthermore, the direct CVD growth reduces overlapping sections of WS₂:Gr and leads to more uniform lateral systems. This approach provides insights into scalable manufacturing of high-quality 2D lateral electronic and optoelectronic devices.