"Infinite Sensitivity" of Black Silicon Ammonia Sensor Achieved by Optical and Electric Dual Drives

Black Silicon Surface-Enhanced Raman Spectroscopy Biosensors: Current Advances and Prospects

Black silicon was discovered by accident and considered an undesirable by-product of the silicon industry. A highly modified surface, consisting of pyramids, needles, holes, pillars, etc., provides high light absorption from the UV to the NIR range and gives black silicon its color-matte black. Although black silicon has already attracted some interest as a promising material for sensitive sensors, the potential of this material has not yet been fully exploited. Over the past three decades, black silicon has been actively introduced as a substrate for surface-enhanced Raman spectroscopy (SERS)-a molecule-specific vibrational spectroscopy technique-and successful proof-of-concept experiments have been conducted. This review focuses on the current progress in black silicon SERS biosensor fabrication, the recent advances in the design of the surface morphology and an analysis of the relation of surface micro-structuring and SERS efficiency and sensitivity. Much attention is paid to problems of non-invasiveness of the technique and biocompatibility of black silicon, its advantages over other SERS biosensors, cost-effectiveness and reproducibility, as well as the expansion of black silicon applications. The question of existing limitations and ways to overcome them is also addressed.

Formation of Black Silicon in a Process of Plasma Etching with Passivation in a SF6/O2 Gas Mixture

This article discusses a method for forming black silicon using plasma etching at a sample temperature range from -20 °C to +20 °C in a mixture of oxygen and sulfur hexafluoride. The surface morphology of the resulting structures, the autocorrelation function of surface features, and reflectivity were studied depending on the process parameters-the composition of the plasma mixture, temperature and other discharge parameters (radical concentrations). The relationship between these parameters and the concentrations of oxygen and fluorine radicals in plasma is shown. A novel approach has been studied to reduce the reflectance using conformal bilayer dielectric coatings deposited by atomic layer deposition. The reflectivity of the resulting black silicon was studied in a wide spectral range from 400 to 900 nm. As a result of the research, technologies for creating black silicon on silicon wafers with a diameter of 200 mm have been proposed, and the structure formation process takes no more than 5 min. The resulting structures are an example of the self-formation of nanostructures due to anisotropic etching in a gas discharge plasma. This material has high mechanical, chemical and thermal stability and can be used as an antireflective coating, in structures requiring a developed surface-photovoltaics, supercapacitors, catalysts, and antibacterial surfaces.

Light and gas dual-function detection and mutual enhancement based on hyperdoped black silicon

We introduce a unique dual-function detector with an asymmetric light illumination based on the black silicon co-hyperdoped with sulfur and nitrogen for light and gas detection, and the properties in NO2 gas sensing and photoelectric detection are studied under various light and gas environments, respectively. Enhanced performance of the device under certain light and gas conditions is observed. When illuminated at the optimal wavelength, the gas sensors' responsivity to NO2 can be enhanced by approximately 5 to 200 times over 730 nm illumination, respectively. The photodetectors' photoresponsivity increases 15 to 200 times in a 300 ppm NO2 gas environment compared to air. Such mutual enhancement achieved through the clever combination of light and gas implies a novel approach to improve the performance of the black silicon detectors in both gas sensing and photoelectric detection.

Large-Scale Wideband Light-Trapping Black Silicon Textured by Laser Inducing Assisted with Laser Cleaning in Ambient Air

Black silicon, which is an attractive material due to its optical properties, is prepared mainly by laser inducing in an SF6 atmosphere. Considering the effect of SF6 gas on the environment and human health, here we propose an efficient, economical, and green approach to process large-scale black silicon. In the wavelength range of 0.3-2.5 µm, the role of air could replace SF6 gas to texture black silicon by laser inducing with appropriate processing parameters. Then, to extend the working window of its excellent light-trapping status, laser-plasma shockwave cleaning was introduced to eliminate the deposition and improve the structures and morphology. The results revealed that the micro-nano structures became higher, denser, and more uniform with increasing cleaning times and deteriorating cleaning velocity, which compensated for the role of S atoms from the ambient SF6. Moreover, absorptance above 85% in the wavelength range of 0.3-15 µm was realized using our method. The effect of scanning pitch between adjacent rows on large-scale black silicon was also discussed. Our method realized the ultrahigh absorptance of large-scale black silicon fabricated in air from visible to mid-infrared, which is of significance in the field of optoelectronic devices.

Study of Cryogenic Unmasked Etching of "Black Silicon" with Ar Gas Additives

The influence of Ar gas additives on ≪black silicon≫ formation is shown in this work. The way to achieve the conical shape of Si texture using low Ar dilution is demonstrated. Also, a possibility of silicon nanowire width reduction keeping a high density of array is shown. No damage to the Si structure caused by Ar plasma was detected. The introduction of Ar into the plasma also does not affect electrical properties. The lifetime value after cryogenic etching with 5 sccm Ar flow remains at the same level of 0.7 ms. The resulting black silicon has a low total reflectance of 1 ± 0.5% in the range of 450-1000 nm in the overall 100 mm Si wafer surface.

Recent Progress of Black Silicon: From Fabrications to Applications

Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a photodetector, photovoltaic cell, photo-electrocatalysis, antibacterial surfaces, and sensors. With the development of fabrication technology, black silicon has expanded in more and more applications and has become a research hotspot. Herein, this review systematically summarizes the fabricating method of black silicon, including nanosecond or femtosecond laser irradiation, metal-assisted chemical etching (MACE), reactive ion etching (RIE), wet chemical etching, electrochemical method, and plasma immersion ion implantation (PIII) methods. In addition, this review focuses on the progress in multiple black silicon applications in the past 10 years. Finally, the prospect of black silicon fabricating and various applications are outlined.

Surface-Enhanced Raman Spectroscopy of Organic Molecules and Living Cells with Gold-Plated Black Silicon

Black silicon (bSi) refers to an etched silicon surface comprising arrays of microcones that effectively suppress reflection from UV to near-infrared (NIR) while simultaneously enhancing the scattering and absorption of light. This makes bSi covered with a nm-thin layer of plasmonic metal, i.e., gold, an attractive substrate material for sensing of bio-macromolecules and living cells using surface-enhanced Raman spectroscopy (SERS). The performed Raman measurements accompanied with finite element numerical simulation and density functional theory analysis revealed that at the 785 nm excitation wavelength, the SERS enhancement factor of the bSi/Au substrate is as high as 10⁸ due to a combination of electromagnetic and chemical mechanisms. This finding makes the SERS-active bSi/Au substrate suitable for detecting trace amounts of organic molecules. We demonstrate the outstanding performance of this substrate by highly sensitive and specific detection of a small organic molecule of 4-mercaptobenzoic acid and living C6 rat glioma cell nucleic acids/proteins/lipids. Specifically, the bSi/Au SERS-active substrate offers a unique opportunity to investigate the living cells' malignant transformation using characteristic protein disulfide Raman bands as a marker. Our findings evidence that bSi/Au provides a pathway to the highly sensitive and selective, scalable, and low-cost substrate for lab-on-a-chip SERS biosensors that can be integrated into silicon-based photonics devices.

Light-enhanced room-temperature gas sensing performance of femtosecond-laser structured silicon after natural aging

Silicon has been studied as a room-temperature material for electrical-based gas sensing but the sensing performance after surface passivation or natural aging is unacceptable. In the present work, we report that for a gas sensor based on the femtosecond-laser structured silicon hyperdoped with sulfur, the gas sensing performance after long-term aging can be significantly enhanced by using a photovoltaic sensing mechanism. After sensor aging, the recorded response/recovery time is 478/2550 s in response to 50 ppm NH₃. In comparison, by using the new mechanism, the response/recovery time is much decreased and the shortest is recorded as 292/930 s. Moreover, the relative gas response could be increased by nearly 2 orders of magnitude. Even at a dryer environment where the gas adsorption/desorption process could take hours long, a much enhanced and rapid response is available in the same way. The enhanced sensing performance could be controlled by the bias voltage or by the light density. The results show that for the aged silicon surface, it can also be a potential gas sensing material through different working principles.

Rapid and Wide-Range Detection of NOx Gas by N-Hyperdoped Silicon with the Assistance of a Photovoltaic Self-Powered Sensing Mode

Wide-dynamic-range NO_x sensors are vital for the environment and health purposes, but few sensors could achieve wide-range detection with ultralow and ultrahigh concentrations at the same time. In this article, the microstructured and nitrogen-hyperdoped silicon (N-Si) for NO_x gas sensing is investigated systematically. Working by the change of surface conductivity, the sensor is ultrasensitive to low concentrations of NO_x down to 11 ppb and shows a rapid response/recovery time of 22/33 s for 80 ppb. When the NO_x concentration increases and exceeds a threshold value (10-50 ppm), an n-p conduction-type transition is observed due to the inversion of the conduction type of major carriers, which limits the dynamic range of the sensor at high concentration. However, when the sensor works in a photovoltaic self-powered mode under the asymmetric light illumination, the limitation can be successfully overcome. Therefore, with the combination of the two working principles, a wide dynamic range stretching over 6 orders of magnitude (∼0.011-4000 ppm) can be achieved.

Photoelectric and flexible poly(styrene-b-ethylene/butylene-b-styrene)-zinc porphyrin–graphene hybrid composite: synthesis, performance, and mechanism

Stretchable and flexible photoelectric materials are highly desirable for the development of artificial intelligence products.