Investigations on Optical Absorption and the Pyro-phototronic Effect with Selectively Patterned Black Silicon for Advanced Photodetection

A novel property existing in the stain-etching technique that eliminates the need for expensive etchant masks in the texturization process of silicon wafers was identified. Through the combination of grayscale lithography and stain-etching methodologies, selective patterning of silicon with AR-P 3510 T, a positive-photoresist mask, was carried out. The etch area ratio was varied in nine different patterns of various feature sizes ranging from 400 to 1500 μm. The optical characteristics of the patterned substrates were determined from diffuse reflectance spectroscopy analysis, and the results were supported with finite-difference time-domain simulations. Complimenting the improvement in optical properties, the electrical losses in microwell-patterned photodetector devices have been reduced with an electro-optic optimum value of the surface enhancement factor, γ. The photodetecting efficiency of a selectively patterned microwell photodetector device exceeded the planar and black silicon photodetector devices with a considerable improvement in the pyro-phototronic effect. This work suggests an alternative for black silicon optoelectronic devices providing a new route to fabricate selectively patterned substrates with an achieved detectivity 16- and 20-fold higher than black and planar silicon photodetector devices, respectively.

Evaluating the Field Emission Properties of N-Type Black Silicon Cold Cathodes Based on a Three-Dimensional Model

Black silicon (BS), a nanostructured silicon surface containing highly roughened surface morphology, has recently emerged as a promising candidate for field emission (FE) cathodes in novel electron sources due to its huge number of sharp tips with ease of large-scale fabrication and controllable geometrical shapes. However, evaluating the FE performance of BS-based nanostructures with high accuracy is still a challenge due to the increasing complexity in the surface morphology. Here, we demonstrate a 3D modeling methodology to fully characterize highly disordered BS-based field emitters randomly distributed on a roughened nonflat surface. We fabricated BS cathode samples with different morphological features to demonstrate the validity of this method. We utilize parametrized scanning electron microscopy images that provide high-precision morphology details, successfully describing the electric field distribution in field emitters and linking the theoretical analysis with the measured FE property of the complex nanostructures with high precision. The 3D model developed here reveals a relationship between the field emission performance and the density of the cones, successfully reproducing the classical relationship between current density J and electric field E (J-E curve). The proposed modeling approach is expected to offer a powerful tool to accurately describe the field emission properties of large-scale, disordered nano cold cathodes, thus serving as a guide for the design and application of BS as a field electron emission material.

Black Silicon as Anti-Reflective Structure for Infrared Imaging Applications

For uncooled infrared cameras based on microbolometers, silicon caps are often utilized to maintain a vacuum inside the packaged bolometer array. To reduce Fresnel reflection losses, anti-reflection coatings are typically applied on both sides of the silicon caps.This work investigates whether black silicon may be used as an alternative to conventional anti-reflective coatings. Reactive ion etching was used to etch the black silicon layer and deep cavities in silicon. The effects of the processed surfaces on optical transmission and image quality were investigated in detail by Fourier transform infrared spectroscopy and with modulated transfer function measurements. The results show that the etched surfaces enable similar transmission to the state-of-the-artanti-reflection coatings in the 8-12 µm range and possibly obtain wider bandwidth transmission up to 24 µm. No degradation in image quality was found when using the processed wafers as windows. These results show that black silicon can be used as an effective anti-reflection layer on silicon caps used in the vacuum packaging of microbolometer arrays.

CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency

Even though the recent progress made in complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) has enabled numerous applications affecting our daily lives, the technology still relies on conventional methods such as antireflective coatings and ion-implanted back-surface field to reduce optical and electrical losses resulting in limited device performance. In this work, these methods are replaced with nanostructured surfaces and atomic layer deposited surface passivation. The results show that such surface nanoengineering applied to a commercial backside illuminated CIS significantly extends its spectral range and enhances its photosensitivity as demonstrated by >90% quantum efficiency in the 300-700 nm wavelength range. The surface nanoengineering also reduces the dark current by a factor of three. While the photoresponse uniformity of the sensor is seen to be slightly better, possible scattering from the nanostructures can lead to increased optical crosstalk between the pixels. The results demonstrate the vast potential of surface nanoengineering in improving the performance of CIS for a wide range of applications.

Black silicon spacing effect on bactericidal efficacy against gram-positive bacteria

The morphology of regular and uniform arrays of black silicon structures was evaluated for bactericidal efficacy against gram-positive, non-motileStaphylococcusepidermidis(S.epidermidis). In this study, uniform and regular arrays of black silicon structures were fabricated using nanosphere lithography and deep reactive ion etching. The effects of nanomorphology on bacterial killing were systematically evaluated using silicon nanostructures with pitches ranging from 300 to 1400 nm pitch on spherical cocci approximately 500 to 1000 nm in diameter. Our results show that nanostructure morphology factors such as height and roughness do not directly determine bactericidal efficacy. Instead, the spacing between nanostructures plays a crucial role in determining how bacteria are stretched and lysed. Nanostructures with smaller pitches are more effective at killing bacteria, and an 82 ± 3% enhancement in bactericidal efficacy was observed for 300 nm pitch nanoneedles surface compared to the flat control substrates.

Hierarchical Structuring of Black Silicon Wafers by Ion-Flow-Stimulated Roughening Transition: Fundamentals and Applications for Photovoltaics

Ion-flow-stimulated roughening transition is a phenomenon that may prove useful in the hierarchical structuring of nanostructures. In this work, we have investigated theoretically and experimentally the surface texturing of single-crystal and multi-crystalline silicon wafers irradiated using ion-beam flows. In contrast to previous studies, ions had relatively low energies, whereas flow densities were high enough to induce a quasi-liquid state in the upper silicon layers. The resulting surface modifications reduced the wafer light reflectance to values characteristic of black silicon, widely used in solar energetics. Features of nanostructures on different faces of silicon single crystals were studied numerically based on the mesoscopic Monte Carlo model. We established that the formation of nano-pyramids, ridges, and twisting dune-like structures is due to the stimulated roughening transition effect. The aforementioned variety of modified surface morphologies arises due to the fact that the effects of stimulated surface diffusion of atoms and re-deposition of free atoms on the wafer surface from the near-surface region are manifested to different degrees on different Si faces. It is these two factors that determine the selection of the allowable "trajectories" (evolution paths) of the thermodynamic system along which its Helmholtz free energy, F, decreases, concomitant with an increase in the surface area of the wafer and the corresponding changes in its internal energy, U (dU>0), and entropy, S (dS>0), so that dF=dU - TdS<0, where T is the absolute temperature. The basic theoretical concepts developed were confirmed in experimental studies, the results of which showed that our method could produce, abundantly, black silicon wafers in an environmentally friendly manner compared to traditional chemical etching.

Dewetting-Assisted Patterning: A Lithography-Free Route to Synthesize Black and Colored Silicon

We report the use of thermal dewetting to structure gold-based catalytic etching masks for metal-assisted chemical etching (MACE). The approach involves low-temperature dewetting of metal films to generate metal holey meshes with tunable morphologies. Combined with MACE, dewetting-assisted patterning is a simple, benchtop route to synthesize Si nanotubes, Si nanowalls, and Si nanowires with defined dimensions and optical properties. The approach is compatible with the synthesis of both black and colored nanostructured silicon substrates. In particular, we report the lithography-free fabrication of silicon nanowires with diameters down to 40 nm that support leaky wave-guiding modes, giving rise to vibrant colors. Additionally, micrometer-sized areas with tunable film composition and thickness were patterned via shadow masking. After dewetting and MACE, such patterned metal films produced regions with distinct nanostructured silicon morphologies and colors. To-date, the fabrication of colored silicon has relied on complicated nanoscale patterning processes. Dewetting-assisted patterning provides a simpler alternative that eliminates this requirement. Finally, the simple transfer of resonant SiNWs into ethanolic solutions with well-defined light absorption properties is reported. Such solution-dispersible SiNWs could open new avenues for the fabrication of ultrathin optoelectronic devices with enhanced and tunable light absorption.

Black Ultra-Thin Crystalline Silicon Wafers Reach the 4n2 Absorption Limit-Application to IBC Solar Cells

Cutting costs by progressively decreasing substrate thickness is a common theme in the crystalline silicon photovoltaic  industry for the last decades, since drastically thinner wafers would significantly reduce the substrate-related costs. In addition to the technological challenges concerning wafering and handling of razor-thin flexible wafers, a major bottleneck is to maintain high absorption in those thin wafers. For the latter, advanced light-trapping techniques become of paramount importance. Here we demonstrate that by applying state-of-the-art black-Si nanotexture produced by DRIE on thin uncommitted wafers, the maximum theoretical absorption (Yablonovitch's 4n2 absorption limit), that is, ideal light trapping, is reached with wafer thicknesses as low as 40, 20, and 10 µm when paired with a back reflector. Due to the achieved promising optical properties the results are implemented into an actual thin interdigitated back contacted solar cell. The proof-of-concept cell, encapsulated in glass, achieved a 16.4% efficiency with an JSC  = 35 mA cm- 2 , representing a 43% improvement in output power with respect to the reference polished cell. These results demonstrate the vast potential of black silicon nanotexture in future extremely-thin silicon photovoltaics.

Boron-Implanted Black Silicon Photodiode with Close-to-Ideal Responsivity from 200 to 1000 nm

Detection of UV light has traditionally been a major challenge for Si photodiodes due to reflectance losses and junction recombination. Here we overcome these problems by combining a nanostructured surface with an optimized implanted junction and compare the obtained performance to state-of-the-art commercial counterparts. We achieve a significant improvement in responsivity, reaching near ideal values at wavelengths all the way from 200 to 1000 nm. Dark current, detectivity, and rise time are in turn shown to be on a similar level. The presented detector design allows a highly sensitive operation over a wide wavelength range without making major compromises regarding the simplicity of the fabrication or other figures of merit relevant to photodiodes.

Increasing the Stability of Isolated and Dense High-Aspect-Ratio Nanopillars Fabricated Using UV-Nanoimprint Lithography

Structural anti-reflective coating and bactericidal surfaces, as well as many other effects, rely on high-aspect-ratio (HAR) micro- and nanostructures, and thus, are of great interest for a wide range of applications. To date, there is no widespread fabrication of dense or isolated HAR nanopillars based on UV nanoimprint lithography (UV-NIL). In addition, little research on fabricating isolated HAR nanopillars via UV-NIL exists. In this work, we investigated the mastering and replication of HAR nanopillars with the smallest possible diameters for dense and isolated arrangements. For this purpose, a UV-based nanoimprint lithography process was developed. Stability investigations with capillary forces were performed and compared with simulations. Finally, strategies were developed in order to increase the stability of imprinted nanopillars or to convert them into nanoelectrodes. We present UV-NIL replication of pillars with aspect ratios reaching up to 15 with tip diameters down to 35 nm for the first time. We show that the stability could be increased by a factor of 58 when coating them with a 20 nm gold layer and by a factor of 164 when adding an additional 20 nm thick layer of SiN. The coating of the imprints significantly improved the stability of the nanopillars, thus making them interesting for a wide range of applications.

Fabrication of Black Silicon Microneedle Arrays for High Drug Loading

Silicon microneedle (Si-MN) systems are a promising strategy for transdermal drug delivery due to their minimal invasiveness and ease of processing and application. Traditional Si-MN arrays are usually fabricated by using micro-electro-mechanical system (MEMS) processes, which are expensive and not suitable for large-scale manufacturing and applications. In addition, Si-MNs have a smooth surface, making it difficult for them to achieve high-dose drug delivery. Herein, we demonstrate a solid strategy to prepare a novel black silicon microneedle (BSi-MN) patch with ultra-hydrophilic surfaces for high drug loading. The proposed strategy consists of a simple fabrication of plain Si-MNs and a subsequent fabrication of black silicon nanowires. First, plain Si-MNs were prepared via a simple method consisting of laser patterning and alkaline etching. The nanowire structures were then prepared on the surfaces of the plain Si-MNs to form the BSi-MNs through Ag-catalyzed chemical etching. The effects of preparation parameters, including Ag⁺ and HF concentrations during Ag nanoparticle deposition and [HF/(HF + H₂O₂)] ratio during Ag-catalyzed chemical etching, on the morphology and properties of the BSi-MNs were investigated in detail. The results show that the final prepared BSi-MN patches exhibit an excellent drug loading capability, more than twice that of plain Si-MN patches with the same area, while maintaining comparable mechanical properties for practical skin piercing applications. Moreover, the BSi-MNs exhibit a certain antimicrobial activity that is expected to prevent bacterial growth and disinfect the affected area when applied to the skin.

Stable and Reusable Lace-like Black Silicon Nanostructures Coated with Nanometer-Thick Gold Films for SERS-Based Sensing

We propose a simple, fast, and low-cost method for producing Au-coated black Si-based SERS-active substrates with a proven enhancement factor of 10⁶. Room temperature reactive ion etching of silicon wafer followed by nanometer-thin gold sputtering allows the formation of a highly developed lace-type Si surface covered with homogeneously distributed gold islands. The mosaic structure of deposited gold allows the use of Au-uncovered Si domains for Raman peak intensity normalization. The fabricated SERS substrates have prominent uniformity (with less than 6% SERS signal variations over large areas, 100 × 100 μm²). It has been found that the storage of SERS-active substrates in an ambient environment reduces the SERS signal by less than 3% in 1 month and not more than 40% in 20 months. We showed that Au-coated black Si-based SERS-active substrates can be reused after oxygen plasma cleaning and developed relevant protocols for removing covalently bonded and electrostatically attached molecules. Experiments revealed that the Raman signal of 4-MBA molecules covalently bonded to the Au coating measured after the 10th cycle was just 4 times lower than that observed for the virgin substrate. A case study of the reusability of the black Si-based substrate was conducted for the subsequent detection of 10^-5 M doxorubicin, a widely used anticancer drug, after the reuse cycle. The obtained SERS spectra of doxorubicin were highly reproducible. We demonstrated that the fabricated substrate permits not only qualitative but also quantitative monitoring of analytes and is suitable for the determination of concentrations of doxorubicin in the range of 10^-9-10^-4 M. Reusable, stable, reliable, durable, low-cost Au-coated black Si-based SERS-active substrates are promising tools for routine laboratory research in different areas of science and healthcare.

Effectivity Trade-Off for SERS Substrates

Black silicon (bSi) is a highly absorptive material in the UV-vis and NIR spectral range. Photon trapping ability makes noble metal plated bSi attractive for fabrication of surface enhanced Raman spectroscopy (SERS) substrates. By using a cost-effective room temperature reactive ion etching method, we designed and fabricated the bSi surface profile, which provides the maximum Raman signal enhancement under NIR excitation when a nanometrically-thin gold layer is deposited. The proposed bSi substrates are reliable, uniform, low cost and effective for SERS-based detection of analytes, making these materials essential for medicine, forensics and environmental monitoring. Numerical simulation revealed that painting bSi with a defected gold layer resulted in an increase in the plasmonic hot spots, and a substantial increase in the absorption cross-section in the NIR range.

Optical properties of black silicon structures ALD-coated with Al2O3

Atomic layer deposited (ALD) Al₂O₃coatings were applied on black silicon (b-Si) structures. The coated nanostructures were investigated regarding their reflective and transmissive behaviour. For a systematic study of the influence of the Al₂O₃coating, ALD coatings with a varying layer thickness were deposited on three b-Si structures with different morphologies. With a scanning electron microscope the morphological evolution of the coating process on the structures was examined. The optical characteristics of the different structures were investigated by spectral transmission and reflection measurements. The usability of the structures for highly efficient absorbers and antireflection (AR) functionalities in the different spectral regions is discussed.

Evaluating the Optical Response of Heavily Decorated Black Silicon Based on a Realistic 3D Modeling Methodology

Combining black silicon (BS), a nanostructured silicon containing highly roughened surface morphology with plasmonic materials, is becoming an attractive approach for greatly enhancing light-matter interactions with promising applications of sensing and light harvesting. However, precisely describing the optical response of a heavily decorated BS structure is still challenging due to the increasing complexity in surface morphology and plasmon hybridization. Here, we propose and fully characterize BS-based multistacked nanostructures with randomly distributed nanoparticles on the highly roughened nonflat surface. We demonstrate a realistic 3D modeling methodology based on parametrized scanning electron microscopy images that provides high-precision morphology details, successfully linking the theoretical analysis with experimental optical response of the complex nanostructures. Far-field calculations very nicely reproduce experimental reflectance spectra, revealing the dependency of light trapping on the thickness of the conformal reflector and the atop nanoparticle size. Near-field analysis clearly identifies three types of stochastic "hotspots". Their contribution to the overall field enhancement is shown to be very much sensitive to the nanoscale surface morphology. The simulated near-field property is then used to examine the measured surface-enhanced Raman scattering (SERS) response on the multistacked structures. The present modeling approach combined with spectroscopic characterizations is expected to offer a powerful tool for the precise description of the optical response of other large-scale highly disordered realistic 3D systems.

Recent Progress of Black Silicon: From Fabrications to Applications

Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a photodetector, photovoltaic cell, photo-electrocatalysis, antibacterial surfaces, and sensors. With the development of fabrication technology, black silicon has expanded in more and more applications and has become a research hotspot. Herein, this review systematically summarizes the fabricating method of black silicon, including nanosecond or femtosecond laser irradiation, metal-assisted chemical etching (MACE), reactive ion etching (RIE), wet chemical etching, electrochemical method, and plasma immersion ion implantation (PIII) methods. In addition, this review focuses on the progress in multiple black silicon applications in the past 10 years. Finally, the prospect of black silicon fabricating and various applications are outlined.

On the Formation of Black Silicon Features by Plasma-Less Etching of Silicon in Molecular Fluorine Gas

In this paper, we study the plasma-less etching of crystalline silicon (c-Si) by F₂/N₂ gas mixture at moderately elevated temperatures. The etching is performed in an inline etching tool, which is specifically developed to lower costs for products needing a high volume manufacturing etching platform such as silicon photovoltaics. Specifically, the current study focuses on developing an effective front-side texturing process on Si(100) wafers. Statistical variation of the tool parameters is performed to achieve high etching rates and low surface reflection of the textured silicon surface. It is observed that the rate and anisotropy of the etching process are strongly defined by the interaction effects between process parameters such as substrate temperature, F₂ concentration, and process duration. The etching forms features of sub-micron dimensions on c-Si surface. By maintaining the anisotropic nature of etching, weighted surface reflection (R_w) as low as R_w < 2% in Si(100) is achievable. The lowering of R_w is mainly due to the formation of deep, density grade nanostructures, so-called black silicon, with lateral dimensions that are smaller to the major wavelength ranges of interest in silicon photovoltaics.

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

The wafer-level integration of high aspect ratio silicon nanostructures is an essential part of the fabrication of nanodevices. Metal-assisted chemical etching (MACE) is a promising low-cost and high-volume technique for the generation of vertically aligned silicon nanowires. Noble metal nanoparticles were used to locally etch the silicon substrate. This work demonstrates a bottom-up self-assembly approach for noble metal nanoparticle formation and the subsequent silicon wet etching. The macroscopic wafer patterning has been done by using a poly(methyl methacrylate) masking layer. Different metals (Au, Pt, Pd, Cu, and Ir) were investigated to derive a set of technologies as platform for specific applications. Especially, the shape of the 3D structures and the resulting reflectance have been investigated. The Si nanostructures fabricated using Au nanoparticles show a perfect light absorption with a reflectance below 0.3%. The demonstrated technology can be integrated into common fabrication processes for microelectromechanical systems.

Macro-, Micro- and Nano-Roughness of Carbon-Based Interface with the Living Cells: Towards a Versatile Bio-Sensing Platform

Integration of living cells with nonbiological surfaces (substrates) of sensors, scaffolds, and implants implies severe restrictions on the interface quality and properties, which broadly cover all elements of the interaction between the living and artificial systems (materials, surface modifications, drug-eluting coatings, etc.). Substrate materials must support cellular viability, preserve sterility, and at the same time allow real-time analysis and control of cellular activity. We have compared new substrates based on graphene and pyrolytic carbon (PyC) for the cultivation of living cells. These are PyC films of nanometer thickness deposited on SiO2 and black silicon and graphene nanowall films composed of graphene flakes oriented perpendicular to the Si substrate. The structure, morphology, and interface properties of these substrates are analyzed in terms of their biocompatibility. The PyC demonstrates interface biocompatibility, promising for controlling cell proliferation and directional intercellular contact formation while as-grown graphene walls possess high hydrophobicity and poor biocompatibility. By performing experiments with C6 glioma cells we discovered that PyC is a cell-friendly coating that can be used without poly-l-lysine or other biopolymers for controlling cell adhesion. Thus, the opportunity to easily control the physical/chemical properties and nanotopography makes the PyC films a perfect candidate for the development of biosensors and 3D bioscaffolds.

Mesopore Formation and Silicon Surface Nanostructuration by Metal-Assisted Chemical Etching With Silver Nanoparticles

This article presents a study on Metal-Assisted Chemical Etching (MACE) of silicon in HF-H₂O₂ using silver nanoparticles as catalysts. Our aim is a better understanding of the process to elaborate new 3D submicrometric surface structures useful for light management. We investigated MACE over the whole range of silicon doping, i.e., p⁺⁺, p⁺, p, p^-, n, n⁺, and n⁺⁺. We discovered that, instead of the well-defined and straight mesopores obtained in p and n-type silicon, in p⁺⁺ and n⁺⁺ silicon MACE leads to the formation of cone-shaped macropores filled with porous silicon. We account for the transition between these two pore-formation regimes (straight and cone-shaped pores) by modeling (at equilibrium and under polarization) the Ag/Si/electrolyte (HF) system. The model simulates the system as two nanodiodes in series. We show that delocalized MACE is explained by a large tunnel current contribution for the p-Si/Ag and n-Si/HF diodes under reverse polarization, which increases with the doping level and when the size of the nanocontacts (Ag, HF) decreases. By analogy with the results obtained on heavily doped silicon, we finally present a method to form size-controlled cone-shaped macropores in p silicon with silver nanoparticles. This shape, instead of the usual straight mesopores, is obtained by applying an external anodic polarization during MACE. Two methods are shown to be effective for the control of the macropore cone angle: one by adjusting the potential applied during MACE, the other by changing the H₂O₂ concentration. Under appropriate etching conditions, the obtained macropores exhibit optical properties (reflectivity ~3 %) similar to that of black silicon.

Gold Nanoparticle-Assisted Black Silicon Substrates for Mass Spectrometry Imaging Applications

Mass spectrometry imaging (MSI) based on matrix-assisted laser desorption ionization (MALDI) is widely used in proteomics. However, matrix-free technologies are gaining popularity for detecting low molecular mass compounds. Small molecules were analyzed with nanostructured materials as ionization promoters, which produce low-to-no background signal, and facilitate enhanced specificity and sensitivity through functionalization. We investigated the fabrication and the use of black silicon and gold-coated black silicon substrates for surface-assisted laser desorption/ionization mass spectrometry imaging (SALDI-MSI) of animal tissues and human fingerprints. Black silicon was created using dry etching, while gold nanoparticles were deposited by sputtering. Both methods are safe for the user. Physicochemical characterization and MSI measurements revealed the optimal properties of the substrates for SALDI applications. The gold-coated black silicon worked considerably better than black silicon as the LDI-MSI substrate. The substrate was also compatible with imprinting, as a sample-simplification method that allows efficient transference of metabolites from the tissues to the substrate surface, without compound delocalization. Moreover, by modifying the surface with hydrophilic and hydrophobic groups, specific interactions were stimulated between surface and sample, leading to a selective analysis of molecules. Thus, our substrate facilitates targeted and/or untargeted in situ metabolomics studies for various fields such as clinical, environmental, forensics, and pharmaceutical research.

Designing Photocatalytic Nanostructured Antibacterial Surfaces: Why Is Black Silica Better than Black Silicon?

The efficiency of photocatalytic antibacterial surfaces is limited by the absorption of light in it. Light absorption in photocatalytic surfaces can be enhanced by structuring it, leading to increased generation of reactive oxygen species (ROS) and hence improved bactericidal efficacy. A second, more passive methodology to kill bacteria involves the use of sharp nanostructures that mechanically disrupt the bacterial membrane. Recently, these two mechanisms were combined to form photoactive nanostructured surfaces with better antibacterial efficacy. However, the design rules for fabricating the optimal photoactive nanostructured surfaces have not been articulated. Here we show that for optimal performance it is very important to account for optoelectrical properties and geometry of the photoactive coating and the underlying pillar. We show that TiO₂-coated nanopillars arrays made of SiO₂, a material with a low extinction coefficient, have 73% higher bactericidal efficacies than those made of Si, a material with a high extinction coefficient. The finite element method (FEM) shows that despite the higher absorption in higher aspect ratio nanopillars, their performance is not always better. The concentration of bulk ROS saturates around 5 μm. For taller pillars, the improvement in surface ROS concentration is minimal due to the diffusion bottleneck. Simulation results corroborate with the experimentally observed methylene blue degradation and bacterial count measurements and provide an explanation of the observed phenomenon. The guidelines for designing these optically activated photocatalyst nanopillars can be extended to other photocatalytic material after adjusting for their respective properties.

Highly Efficient Photoelectrochemical Synthesis of Ammonia Using Plasmon-Enhanced Black Silicon under Ambient Conditions

Although photoelectrochemical synthesis of NH₃ is considered as an eco-friendly and sustainable process under ambient conditions, stable and highly efficient catalysts for the N₂ reduction reaction are still lacking because of the chemically inert nature of the triple bonds in elemental nitrogen and the competitive reaction of water reduction. In this paper, a photoelectrochemical N₂ reduction reaction route is proposed through combining black silicon and Ag nanoparticles using a simple deposition method. The synergetic effect of Ag nanoparticles and black Si significantly enhances the activity for the ammonia evolution reaction. The obtained Ag/bSi photocathode reaches a high Faraday efficiency of 40.6% and an NH₃ yield of 2.87 μmol h^-1 cm^-2 at -0.2 V versus the reversible hydrogen electrode in 0.1 M Na₂SO₄.

In Situ Formation of Nanoporous Silicon on a Silicon Wafer via the Magnesiothermic Reduction Reaction (MRR) of Diatomaceous Earth

Successful direct route production of silicon nanostructures from diatomaceous earth (DE) on a single crystalline silicon wafer via the magnesiothermic reduction reaction is reported. The formed porous coating of 6 µm overall thickness contains silicon as the majority phase along with minor traces of Mg, as evident from SEM-EDS and the Focused Ion Beam (FIB) analysis. Raman peaks of silicon at 519 cm^-1 and 925 cm^-1 were found in both the film and wafer substrate, and significant intensity variation was observed, consistent with the SEM observation of the directly formed silicon nanoflake layer. Microstructural analysis of the flakes reveals the presence of pores and cavities partially retained from the precursor diatomite powder. A considerable reduction in surface reflectivity was observed for the silicon nanoflakes, from 45% for silicon wafer to below 15%. The results open possibilities for producing nanostructured silicon with a vast range of functionalities.

Ultratrace Nitroaromatic Vapor Detection via Surface-Enhanced Fluorescence on Carbazole-Terminated Black Silicon

Detection of nitroaromatic compounds (NACs) is an important applied task for environmental monitoring, medical diagnostics, and forensic analysis. However, detection of NAC vapors is challenging owing to their low vapor pressure and relatively weak sensitivity of the existing detection techniques. Here, we propose a novel concept to design fluorescence (FL) detection platforms based on chemical functionalization of nanotextured dielectric surfaces exhibiting resonant light absorption, trapping, and localization effects. We demonstrate highly-efficient NAC vapor sensor with selective FL-quenching response from monolayers of carbazole moieties covalently bonded to a spiky silicon surface, "black" silicon, produced over the centimeter-scale area using simple reactive ion etching. The sensor is shown to provide unprecedented ppt (10^-12) range limits of detection for several NAC vapors. Easy-to-implement scalable fabrication procedure combined with simple and versatile functionalization techniques applicable to all-dielectric surfaces make the suggested concept promising for realization of various gas sensing systems for social and environmental safety applications.

High-Performance Free-Standing Flexible Photodetectors Based on Sulfur-Hyperdoped Ultrathin Silicon

Flexible photodetectors (PDs) prepared with silicon-based materials have received considerable attention for their use in a wide range of portable and wearable applications. In this study, we present the first free-standing flexible PD based on sulfur-hyperdoped ultrathin silicon, which was fabricated using a femtosecond laser in a SF₆ atmosphere. It is found that the fabricated device exhibits excellent performance of broadband photoresponse from 400 to 1200 nm, with a peak responsivity of 63.79 A/W @ 870 nm at a low bias voltage of -2 V, corresponding to an external quantum efficiency reaching 9092%, which surpasses most values reported for silicon-based flexible PDs. In addition, the device shows a fast response speed (rise time τ_r = 68 μs) and stable detection performance with good mechanical flexibility. The high-performance PD described here suggests a promising way in flexible applications for sensors, imaging systems, and optical communication systems.

Light Confinement Effect Induced Highly Sensitive, Self-Driven Near-Infrared Photodetector and Image Sensor Based on Multilayer PdSe2 /Pyramid Si Heterojunction

In this study, a highly sensitive and self-driven near-infrared (NIR) light photodetector based on PdSe₂ /pyramid Si heterojunction arrays, which are fabricated through simple selenization of predeposited Pd nanofilm on black Si, is demonstrated. The as-fabricated hybrid device exhibits excellent photoresponse performance in terms of a large on/off ratio of 1.6 × 10⁵ , a responsivity of 456 mA W^-1 , and a high specific detectivity of up to 9.97 × 10¹³ Jones under 980 nm illumination at zero bias. Such a relatively high sensitivity can be ascribed to the light trapping effect of the pyramid microstructure, which is confirmed by numerical modeling based on finite-difference time domain. On the other hand, thanks to the broad optical absorption properties of PdSe₂ , the as-fabricated device also exhibits obvious sensitivity to other NIR illuminations with wavelengths of 1300, 1550, and 1650 nm, which is beyond the photoresponse range of Si-based devices. It is also found that the PdSe₂ /pyramid Si heterojunction device can also function as an NIR light sensor, which can readily record both "tree" and "house" images produced by 980 and 1300 nm illumination, respectively.

Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells

In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiN_x) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al₂O₃) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiN_x/Al₂O₃ layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiN_x layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices.

Fabrication of Micro- and Nanopillars from Pyrolytic Carbon and Tetrahedral Amorphous Carbon

Pattern formation of pyrolyzed carbon (PyC) and tetrahedral amorphous carbon (ta-C) thin films were investigated at micro- and nanoscale. Micro- and nanopillars were fabricated from both materials, and their biocompatibility was studied with cell viability tests. Carbon materials are known to be very challenging to pattern. Here we demonstrate two approaches to create biocompatible carbon features. The microtopographies were 2 μ m or 20 μ m pillars (1:1 aspect ratio) with three different pillar layouts (square-grid, hexa-grid, or random-grid orientation). The nanoscale topography consisted of random nanopillars fabricated by maskless anisotropic etching. The PyC structures were fabricated with photolithography and embossing techniques in SU-8 photopolymer which was pyrolyzed in an inert atmosphere. The ta-C is a thin film coating, and the structures for it were fabricated on silicon substrates. Despite different fabrication methods, both materials were formed into comparable micro- and nanostructures. Mouse neural stem cells were cultured on the samples (without any coatings) and their viability was evaluated with colorimetric viability assay. All samples expressed good biocompatibility, but the topography has only a minor effect on viability. Two μ m pillars in ta-C shows increased cell count and aggregation compared to planar ta-C reference sample. The presented materials and fabrication techniques are well suited for applications that require carbon chemistry and benefit from large surface area and topography, such as electrophysiological and -chemical sensors for in vivo and in vitro measurements.

Silicon Nanocanyon: One-Step Bottom-Up Fabrication of Black Silicon via in-Lasing Hydrophobic Self-Clustering of Silicon Nanocrystals for Sustainable Optoelectronics

We report a novel one-step bottom-up fabrication method for multiscale-structured black Si, which is characterized by randomly distributed microscale Si layers covered with sub-100 nm protrusions with submicron boundary grooves. The unique multiscale structure, suggested as a "nanocanyon," effectively minimizes light reflection over a broad spectrum by diversifying the scattering routes from the nanotextured surface to the wide distributed boundary micronanoscale grooves. This structure was achieved by hydrophobic clustering and local aggregation of instantaneously melted Si nanocrystals on a glass substrate under laser irradiation. This method can replace the complicated conventional silicon processes, such as patterning for selective Si formation, texturing for improved absorption, and doping for modifying the electrical properties, because the proposed method obviates the need for photolithography, chemical etching, vacuum processes, and expensive wafers. Finally, black Si photosensor arrays were successfully demonstrated by a low-cost solution process and a laser growth sintering technique for microchannel fabrication. The results show the great potential of the proposed fabrication method for low-cost and sustainable production of highly sensitive optoelectronics and as an alternative to conventional wafer-based photosensor manufacturing techniques.

Anti-Reflectance Optimization of Secondary Nanostructured Black Silicon Grown on Micro-Structured Arrays

Owing to its extremely low light absorption, black silicon has been widely investigated and reported in recent years, and simultaneously applied to various disciplines. Black silicon is, in general, fabricated on flat surfaces based on the silicon substrate. However, with three normal fabrication methods-plasma dry etching, metal-assisted wet etching, and femtosecond laser pulse etching-black silicon cannot perform easily due to its lowest absorption and thus some studies remained in the laboratory stage. This paper puts forward a novel secondary nanostructured black silicon, which uses the dry-wet hybrid fabrication method to achieve secondary nanostructures. In consideration of the influence of the structure's size, this paper fabricated different sizes of secondary nanostructured black silicon and compared their absorptions with each other. A total of 0.5% reflectance and 98% absorption efficiency of the pit sample were achieved with a diameter of 117.1 μm and a depth of 72.6 μm. In addition, the variation tendency of the absorption efficiency is not solely monotone increasing or monotone decreasing, but firstly increasing and then decreasing. By using a statistical image processing method, nanostructures with diameters between 20 and 30 nm are the majority and nanostructures with a diameter between 10 and 40 nm account for 81% of the diameters.

Conformal Antireflective Surface Formed onto 3-D Silicon Structure

This letter reports on the fabrication, simulation and characterization of conformal antireflective black-silicon (BSi) nanowires on a 3D silicon structure. The BSi nanostructures were formed on various facets of a 3D Si structure including sharp tips and sidewalls using a metal-assisted chemical (MAC) etching process. The conformal BSi design was simulated using FDTD Lumerical software. The antireflection capability was indicated by the quantified reduction in normalized intensity after image processing of diffraction patterns. An optical iris of 1.00-mm circular aperture with conformal BSi nanowires was fabricated and characterized to demonstrate the anti-reflectivity capability at two visible wavelengths of 532 and 633 nm. The iris showed a significant reduction in glare around its Airy disc, up to 3× smaller than the same one but without the BSi nanostructures.

Protected Light-Trapping Silicon by a Simple Structuring Process for Sunlight-Assisted Water Splitting

Macroporous layers are grown onto n-type silicon by successive photoelectrochemical etching in HF-containing solution and chemical etching in KOH. This specific latter treatment gives highly antireflective properties of the Si surface. The duration of the chemical etching is optimized to render the surface as absorbent as possible, and the morphology of the as-grown layer is characterized by scanning electron microscopy. Further functionalization of such structured Si surface is carried out by atomic layer deposition of a thin conformal and homogeneous TiO2 layer that is crystallized by an annealing at 450 °C. This process allows using such surfaces as photoanodes for water oxidation. The 40 nm thick TiO2 film acts indeed as an efficient protective layer against the photocorrosion of the porous Si in KOH, enhances its wettability, and improves the light absorption of the photoelectrode. The macroporous dual-absorber TiO2/Si has a beneficial effect on water oxidation in 1 M KOH and leads to a considerable negative shift of the onset potential of ∼400 mV as well as a 50% increase in photocurrent at 1 V vs SCE.

Proton Reduction Using a Hydrogenase-Modified Nanoporous Black Silicon Photoelectrode

Metalloenzymes featuring earth-abundant metal-based cores exhibit rates for catalytic processes such as hydrogen evolution comparable to those of noble metals. Realizing these superb catalytic properties in artificial systems is challenging owing to the difficulty of effectively interfacing metalloenzymes with an electrode surface in a manner that supports efficient charge-transfer. Here, we demonstrate that a nanoporous "black" silicon (b-Si) photocathode provides a unique interface for binding an adsorbed [FeFe]-hydrogenase enzyme ([FeFe]-H2ase). The resulting [FeFe]-H2ase/b-Si photoelectrode displays a 280 mV more positive onset potential for hydrogen generation than bare b-Si without hydrogenase, similar to that observed for a b-Si/Pt photoelectrode at the same light intensity. Additionally, we show that this H2ase/b-Si electrode exhibits a turnover frequency of ≥1300 s(-1) and a turnover number above 10(7) and sustains current densities of at least 1 mA/cm(2) based on the actual surface area of the electrode (not the smaller projected geometric area), orders of magnitude greater than that observed for previous enzyme-catalyzed electrodes. While the long-term stability of hydrogenase on the b-Si surface remains too low for practical applications, this work extends the proof-of-concept that biologically derived metalloenzymes can be interfaced with inorganic substrates to support technologically relevant current densities.

Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices

Silicon nanowires (Si NWs) are widely investigated nowadays for implementation in advanced energy conversion and storage devices, as well as many other possible applications. Black silicon (BSi)-NWs are dry etched NWs that merge the advantages related to low-dimensionality with the special industrial appeal connected to deep reactive ion etching (RIE). In fact, RIE is a well established technique in microelectronics manufacturing. However, RIE processing could affect the electrical properties of BSi-NWs by introducing deep states into their forbidden gap. This work applies deep level transient spectroscopy (DLTS) to identify electrically active deep levels and the associated defects in dry etched Si NW arrays. Besides, the successful fitting of DLTS spectra of BSi-NWs-based Schottky barrier diodes is an experimental confirmation that the same theoretical framework of dynamic electronic behavior of deep levels applies in bulk as well as in low dimensional structures like NWs, when quantum confinement conditions do not occur. This has been validated for deep levels associated with simple pointlike defects as well as for deep levels associated with defects with richer structures, whose dynamic electronic behavior implies a more complex picture.

In-Situ Fabrication of a Self-Aligned Selective Emitter Silicon Solar Cell Using the Gold Top Contacts To Facilitate the Synthesis of a Nanostructured Black Silicon Antireflective Layer Instead of an External Metal Nanoparticle Catalyst

Silicon solar cells with nanopore-type black silicon (b-Si) antireflection (AR) layers and self-aligned selective emitter (SE) are reported in which the b-Si structure is prepared without the traditional addition of a nanoparticle (NP) catalyst. The contact-assisted chemical etching (CACE) method is reported here for the first time, in which the metal top contacts on silicon solar cell surfaces function as the catalysts for b-Si fabrication and the whole etching process can be done in minutes at room temperature. The CACE method is based on the metal-assisted chemical etching (MACE) solution but without or metal precursor in the Si etchant (HF:H2O2:H2O), and the Au top contacts, or catalysts, are not removed from the solar cell surface after the etching. The effects of etching time, HF and H2O2 concentration, and the HF:H2O2 ratio on the b-Si morphology, surface reflectivity, and solar cell efficiency have been investigated. Higher [HF] and [H2O2] with longer etching time cause collapse of the b-Si nanoporous structure and penetration of the p-n junctions, which are detrimental to the solar cell efficiency. The b-Si solar cell fabricated with the HF:H2O2:H2O volume ratio of 3:3:20 and a 3 min etch time shows the highest efficiency 8.99% along with a decrease of reflectivity from 36.1% to 12.6% compared to that of the nonetched Si solar cell.

Black silicon with self-cleaning surface prepared by wetting processes

This paper reports on a simple method to prepare a hydrophobic surface on black silicon, which is fabricated by metal-assisted wet etching. To increase the reaction rate, the reaction device was placed in a heat collection-constant temperature type magnetic stirrer and set at room temperature. It was demonstrated that the micro- and nanoscale spikes on the black silicon made the surface become hydrophobic. As the reaction rate increases, the surface hydrophobicity becomes more outstanding and presents self-cleaning until the very end. The reflectance of the black silicon is drastically suppressed over a broad spectral range due to the unique geometry, which is effective for the enhancement of absorption.

Conductive black silicon surface made by silver nanonetwork assisted etching

Conductive black silicon surfaces (CBSSs) are fabricated by Ag network-assisted catalytic etching, with the Ag network buried in silicon for low reflectance. The CBSSs present a high light absorbance of 97% and good electrical conductivity of less than 10 Ω/□. The CBSSs might be used as anti-reflection-coating free light-harvesting devices.

Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: evidences for light localization effect

We study the structure and optical properties of arrays of silicon nanowires (SiNWs) with a mean diameter of approximately 100 nm and length of about 1-25 μm formed on crystalline silicon (c-Si) substrates by using metal-assisted chemical etching in hydrofluoric acid solutions. In the middle infrared spectral region, the reflectance and transmittance of the formed SiNW arrays can be described in the framework of an effective medium with the effective refractive index of about 1.3 (porosity, approximately 75%), while a strong light scattering for wavelength of 0.3 ÷ 1 μm results in a decrease of the total reflectance of 1%-5%, which cannot be described in the effective medium approximation. The Raman scattering intensity under excitation at approximately 1 μm increases strongly in the sample with SiNWs in comparison with that in c-Si substrate. This effect is related to an increase of the light-matter interaction time due to the strong scattering of the excitation light in SiNW array. The prepared SiNWs are discussed as a kind of 'black silicon', which can be formed in a large scale and can be used for photonic applications as well as in molecular sensing.