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Neilson KM, Hamtaei S, Nassiri Nazif K, Carr JM, Rahimisheikh S, Nitta FU, Brammertz G, Blackburn JL, Hadermann J, Saraswat KC, Reid OG, Vermang B, Daus A, Pop E. Toward Mass Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe 2 by Tungsten Selenization. ACS NANO 2024; 18:24819-24828. [PMID: 39177965 DOI: 10.1021/acsnano.4c03590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2024]
Abstract
Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to their desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite their potential, the majority of TMD solar cells to date are fabricated in a nonscalable fashion, with exfoliated materials, due to the lack of high-quality, large-area, multilayer TMDs. Here, we present the scalable, thickness-tunable synthesis of multilayer WSe2 films by selenizing prepatterned tungsten with either solid-source selenium at 900 °C or H2Se precursors at 650 °C. Both methods yield photovoltaic-grade, wafer-scale WSe2 films with a layered van der Waals structure and superior characteristics, including charge carrier lifetimes up to 144 ns, over 14× higher than those of any other large-area TMD films previously demonstrated. Simulations show that such carrier lifetimes correspond to ∼22% power conversion efficiency and ∼64 W g-1 specific power in a packaged solar cell, or ∼3 W g-1 in a fully packaged solar module. The results of this study could facilitate the mass production of high-efficiency multilayer WSe2 solar cells at low cost.
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Affiliation(s)
- Kathryn M Neilson
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Sarallah Hamtaei
- Hasselt University, Imo-imomec, Hasselt 3500, Belgium
- Imec, Imo-imomec, Genk 3600, Belgium
- EnergyVille, Imo-imomec, Genk 3600, Belgium
| | - Koosha Nassiri Nazif
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Joshua M Carr
- University of Colorado Boulder, Materials Science & Engineering Program, Boulder, Colorado 80303, United States
| | - Sepideh Rahimisheikh
- University of Antwerp, Electron Microscopy for Materials Science (EMAT), Antwerpen 2020, Belgium
| | - Frederick U Nitta
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Guy Brammertz
- Hasselt University, Imo-imomec, Hasselt 3500, Belgium
- Imec, Imo-imomec, Genk 3600, Belgium
- EnergyVille, Imo-imomec, Genk 3600, Belgium
| | - Jeffrey L Blackburn
- Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Joke Hadermann
- University of Antwerp, Electron Microscopy for Materials Science (EMAT), Antwerpen 2020, Belgium
| | - Krishna C Saraswat
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Obadiah G Reid
- Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Bart Vermang
- Hasselt University, Imo-imomec, Hasselt 3500, Belgium
- Imec, Imo-imomec, Genk 3600, Belgium
- EnergyVille, Imo-imomec, Genk 3600, Belgium
| | - Alwin Daus
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Sensors Laboratory, Department Microsystems Engineering (IMTEK), University Freiburg, Freiburg 79110, Germany
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States
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2
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Altvater M, Muratore C, Snure M, Glavin NR. Two-Step Conversion of Metal and Metal Oxide Precursor Films to 2D Transition Metal Dichalcogenides and Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400463. [PMID: 38733217 DOI: 10.1002/smll.202400463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Revised: 04/11/2024] [Indexed: 05/13/2024]
Abstract
The widely studied class of two-dimensional (2D) materials known as transition metal dichalcogenides (TMDs) are now well-poised to be employed in real-world applications ranging from electronic logic and memory devices to gas and biological sensors. Several scalable thin film synthesis techniques have demonstrated nanoscale control of TMD material thickness, morphology, structure, and chemistry and correlated these properties with high-performing, application-specific device metrics. In this review, the particularly versatile two-step conversion (2SC) method of TMD film synthesis is highlighted. The 2SC technique relies on deposition of a solid metal or metal oxide precursor material, followed by a reaction with a chalcogen vapor at an elevated temperature, converting the precursor film to a crystalline TMD. Herein, the variables at each step of the 2SC process including the impact of the precursor film material and deposition technique, the influence of gas composition and temperature during conversion, as well as other factors controlling high-quality 2D TMD synthesis are considered. The specific advantages of the 2SC approach including deposition on diverse substrates, low-temperature processing, orientation control, and heterostructure synthesis, among others, are featured. Finally, emergent opportunities that take advantage of the 2SC approach are discussed to include next-generation electronics, sensing, and optoelectronic devices, as well as catalysis for energy-related applications.
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Affiliation(s)
- Michael Altvater
- Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, 45433, USA
- UES Inc., Dayton, OH, 45432, USA
| | - Christopher Muratore
- Department of Chemical and Materials Engineering, University of Dayton, Dayton, 45469, OH, USA
| | - Michael Snure
- Air Force Research Laboratory, Sensors Directorate, WPAFB, OH, 45433, USA
| | - Nicholas R Glavin
- Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, 45433, USA
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3
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Jo HK, Kim J, Lim YR, Shin S, Song DS, Bae G, Kwon YM, Jang M, Yim S, Myung S, Lee SS, Kim CG, Kim KK, Lim J, Song W. Wafer-Scale Production of Two-Dimensional Tin Monoselenide: Expandable Synthetic Platform for van der Waals Semiconductor-Based Broadband Photodetectors. ACS NANO 2023; 17:1372-1380. [PMID: 36625593 DOI: 10.1021/acsnano.2c09854] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
A synthetic platform for industrially applicable two-dimensional (2D) semiconductors that addresses the paramount issues associated with large-scale production, wide-range photosensitive materials, and oxidative stability has not yet been developed. In this study, we attained the 6 in. scale production of 2D SnSe semiconductors with spatial homogeneity using a rational synthetic platform based on the thermal decomposition of solution-processed single-source precursors. The long-range structural and chemical homogeneities of the 2D SnSe layers are manifested using comprehensive spectroscopic analyses. Furthermore, the capability of the SnSe-based photodetectors for broadband photodetection is distinctly verified. The photoresponsivity and detectivity of the SnSe-based photodetectors are 5.89 A W-1 and 1.8 × 1011 Jones at 532 nm, 1.2 A W-1 and 3.7 × 1010 Jones at 1064 nm, and 0.14 A W-1 and 4.3 × 109 Jones at 1550 nm, respectively. The minimum rise times for the 532 and 1064 nm lasers are 62 and 374 μs, respectively. The photoelectrical analysis of the 5 × 5 SnSe-based photodetector array reveals 100% active devices with 95.06% photocurrent uniformity. We unequivocally validated that the air and thermal stabilities of the photocurrent yielded from the SnSe-based photodetector are determined to be >30 d in air and 160 °C, respectively, which are suitable for optoelectronic applications.
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Affiliation(s)
- Hyeong-Ku Jo
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jahee Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Yi Rang Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Sunyoung Shin
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Da Som Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Garam Bae
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Yeong Min Kwon
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Moonjeong Jang
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Soonmin Yim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Sung Myung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Sun Sook Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Chang Gyoun Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jongsun Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Wooseok Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
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4
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Lee L, Chiang CH, Shen YC, Wu SC, Shih YC, Yang TY, Hsu YC, Cyu RH, Yu YJ, Hsieh SH, Chen CH, Lebedev M, Chueh YL. Rational Design on Polymorphous Phase Switching in Molybdenum Diselenide-Based Memristor Assisted by All-Solid-State Reversible Intercalation toward Neuromorphic Application. ACS NANO 2023; 17:84-93. [PMID: 36575141 DOI: 10.1021/acsnano.2c04356] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
In this work, a low-power memristor based on vertically stacked two-dimensional (2D) layered materials, achieved by plasma-assisted vapor reaction, as the switching material, with which the copper and gold metals as electrodes featured by reversible polymorphous phase changes from a conducting 1T-phase to a semiconducting 2H-one once copper cations interacted between vertical lamellar layers and vice versa, was demonstrated. Here, molybdenum diselenide was chosen as the switching material, and the reversible polymorphous phase changes activated by the intercalation of Cu cations were confirmed by pseudo-operando Raman scattering, transmission electron microscopy, and scanning photoelectron microscopy under high and low resistance states, respectively. The switching can be activated at about ±1 V with critical currents less than 10 μA with an on/off ratio approaching 100 after 100 cycles and low power consumption of ∼0.1 microwatt as well as linear weight updates controlled by the amount of intercalation. The work provides alternative feasibility of reversible and all-solid-state metal interactions, which benefits monolithic integrations of 2D materials into operative electronic circuits.
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Affiliation(s)
- Ling Lee
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chun-Hsiu Chiang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ying-Chun Shen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shu-Chi Wu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Chuan Shih
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Tzu-Yi Yang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Chieh Hsu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ruei-Hong Cyu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yi-Jen Yu
- Instrument Center, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shang-Hsien Hsieh
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chia-Hao Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Mikhail Lebedev
- Laboratory of Functional Films and Coatings, Nikolaev Institute of inorganic chemistry SB RAS, Lavrent'ev ave. 3, Novosibirsk 630090, Russia
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
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5
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Xu X, Guo T, Kim H, Hota MK, Alsaadi RS, Lanza M, Zhang X, Alshareef HN. Growth of 2D Materials at the Wafer Scale. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108258. [PMID: 34860446 DOI: 10.1002/adma.202108258] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 11/29/2021] [Indexed: 06/13/2023]
Abstract
Wafer-scale growth has become a critical bottleneck for scaling up applications of van der Waal (vdW) layered 2D materials in high-end electronics and optoelectronics. Most vdW 2D materials are initially obtained through top-down synthesis methods, such as exfoliation, which can only prepare small flakes on a micrometer scale. Bottom-up growth can enable 2D flake growth over a large area. However, seamless merging of these flakes to form large-area continuous films with well-controlled layer thickness and lattice orientation is still a significant challenge. This review briefly introduces several vdW layered 2D materials covering their lattice structures, representative physical properties, and potential roles in large-scale applications. Then, several methods used to grow vdW layered 2D materials at the wafer scale are reviewed in depth. In particular, three strategies are summarized that enable 2D film growth with a single-crystalline structure over the whole wafer: growth of an isolated domain, growth of unidirectional domains, and conversion of oriented precursors. After that, the progress in using wafer-scale 2D materials in integrated devices and advanced epitaxy is reviewed. Finally, future directions in the growth and scaling of vdW layered 2D materials are discussed.
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Affiliation(s)
- Xiangming Xu
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tianchao Guo
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Hyunho Kim
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mrinal K Hota
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Rajeh S Alsaadi
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mario Lanza
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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6
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Hynek DJ, Singhania RM, Xu S, Davis B, Wang L, Yarali M, Pondick JV, Woods JM, Strandwitz NC, Cha JJ. cm 2-Scale Synthesis of MoTe 2 Thin Films with Large Grains and Layer Control. ACS NANO 2021; 15:410-418. [PMID: 33211473 DOI: 10.1021/acsnano.0c08069] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Owing to the small energy differences between its polymorphs, MoTe2 can access a full spectrum of electronic states from the 2H semiconducting state to the 1T' semimetallic state and from the Td Weyl semimetallic state to the superconducting state in the 1T' and Td phase at low temperature. Thus, it is a model system for phase transformation studies as well as quantum phenomena such as the quantum spin Hall effect and topological superconductivity. Careful studies of MoTe2 and its potential applications require large-area MoTe2 thin films with high crystallinity and thickness control. Here, we present cm2-scale synthesis of 2H-MoTe2 thin films with layer control and large grains that span several microns. Layer control is achieved by controlling the initial thickness of the precursor MoOx thin films, which are deposited on sapphire substrates by atomic layer deposition and subsequently tellurized. Despite the van der Waals epitaxy, the precursor-substrate interface is found to critically determine the uniformity in thickness and grain size of the resulting MoTe2 films: MoTe2 grown on sapphire show uniform films while MoTe2 grown on amorphous SiO2 substrates form islands. This synthesis strategy decouples the layer control from the variabilities of growth conditions for robust growth results and is applicable to growing other transition-metal dichalcogenides with layer control.
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Affiliation(s)
- David J Hynek
- Energy Sciences Institute, Department of Mechanical Engineering and Materials Science, Yale University, West Haven, Connecticut 06516, United States
| | - Raivat M Singhania
- Department of Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, United States
| | - Shiyu Xu
- Energy Sciences Institute, Department of Mechanical Engineering and Materials Science, Yale University, West Haven, Connecticut 06516, United States
| | - Benjamin Davis
- Department of Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, United States
| | - Leizhi Wang
- Energy Sciences Institute, Department of Mechanical Engineering and Materials Science, Yale University, West Haven, Connecticut 06516, United States
| | - Milad Yarali
- Energy Sciences Institute, Department of Mechanical Engineering and Materials Science, Yale University, West Haven, Connecticut 06516, United States
| | - Joshua V Pondick
- Energy Sciences Institute, Department of Mechanical Engineering and Materials Science, Yale University, West Haven, Connecticut 06516, United States
| | - John M Woods
- Energy Sciences Institute, Department of Mechanical Engineering and Materials Science, Yale University, West Haven, Connecticut 06516, United States
| | - Nicholas C Strandwitz
- Department of Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, United States
| | - Judy J Cha
- Energy Sciences Institute, Department of Mechanical Engineering and Materials Science, Yale University, West Haven, Connecticut 06516, United States
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7
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Zhao G, Zou J, Zhang T, Li C, Zhou S, Jiao F. Recent progress on removal of indoor air pollutants by catalytic oxidation. REVIEWS ON ENVIRONMENTAL HEALTH 2020; 35:311-321. [PMID: 32598323 DOI: 10.1515/reveh-2019-0102] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2019] [Accepted: 05/11/2020] [Indexed: 06/11/2023]
Abstract
Indoor air pollutant is a serious problem due to its wide diversity and variability. The harmful substances from construction materials and decorative materials may make the indoor air pollution become more and more serious and cause serious health problems. In this paper, the review summarizes the advanced technologies for the removal of indoor air pollutants and the development in the treatment of indoor air pollution by catalytic oxidation technologies. Meanwhile, some catalytic oxidation mechanisms of indoor air pollutants are proposed in detail, and suggestions for the indoor air pollution treatment are also presented, in order to provide some reference for subsequent research.
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Affiliation(s)
- Guoqing Zhao
- School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, People's Republic of China
| | - Jiao Zou
- School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, People's Republic of China
| | - Taiheng Zhang
- School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, People's Republic of China
| | - Caifeng Li
- School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, People's Republic of China
| | - Shu Zhou
- School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, People's Republic of China
| | - Feipeng Jiao
- School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, People's Republic of China
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8
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Shim GW, Hong W, Cha JH, Park JH, Lee KJ, Choi SY. TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907166. [PMID: 32176401 DOI: 10.1002/adma.201907166] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2019] [Revised: 12/16/2019] [Indexed: 06/10/2023]
Abstract
As the need for super-high-resolution displays with various form factors has increased, it has become necessary to produce high-performance thin-film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a-Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light-emitting diode displays, and also to overcome the performance and reliability issues of a-Si:H, low-temperature polycrystalline silicon and amorphous oxide semiconductors have partly replaced a-Si:H channel materials. Basic material properties and device structures of TFTs in commercial displays are explored, and then the potential of atomically thin layered transition metal dichalcogenides as next-generation channel materials is discussed.
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Affiliation(s)
- Gi Woong Shim
- Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Woonggi Hong
- Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Jun-Hwe Cha
- Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Jung Hwan Park
- Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA
| | - Keon Jae Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Sung-Yool Choi
- Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
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9
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Lim YR, Han JK, Yoon Y, Lee JB, Jeon C, Choi M, Chang H, Park N, Kim JH, Lee Z, Song W, Myung S, Lee SS, An KS, Ahn JH, Lim J. Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1901405. [PMID: 31157462 DOI: 10.1002/adma.201901405] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2019] [Revised: 05/13/2019] [Indexed: 06/09/2023]
Abstract
Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1- x ) Se2 x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62 Se0.38 , MoS1.37 Se0.63 , MoS1.15 Se0.85 , and MoS0.46 Se1.54 alloys, as well as MoS2 and MoSe2 . Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2 , are unambiguously achieved.
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Affiliation(s)
- Yi Rang Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Jin Kyu Han
- Department of Energy Conversion and Storage, Technical University of Denmark, Frederiksborgvej 399, 4000, Roskilde, Denmark
| | - Yeoheung Yoon
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Jae-Bok Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Cheolho Jeon
- Nano-Surface Research Group, Korea Basic Science Institute, Daejeon, 302-333, Republic of Korea
| | - Min Choi
- Center of Molecular Modeling and Simulation, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulsan, 44919, Republic of Korea
| | - Hyunju Chang
- Center of Molecular Modeling and Simulation, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Noejung Park
- Department of Physics, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulsan, 44919, Republic of Korea
| | - Jung Hwa Kim
- School of Material Science and Engineering, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulsan, 44919, Republic of Korea
| | - Zonghoon Lee
- School of Material Science and Engineering, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulsan, 44919, Republic of Korea
- Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulsan, 44919, Republic of Korea
| | - Wooseok Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Sung Myung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Sun Sook Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Ki-Seok An
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Jongsun Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
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Sumesh CK, Peter SC. Two-dimensional semiconductor transition metal based chalcogenide based heterostructures for water splitting applications. Dalton Trans 2019; 48:12772-12802. [DOI: 10.1039/c9dt01581g] [Citation(s) in RCA: 53] [Impact Index Per Article: 10.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Recent research and development is focused in an intensive manner to increase the efficiency of solar energy conversion into electrical energy via photovoltaics and photo-electrochemical reactions.
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Affiliation(s)
- C. K. Sumesh
- Department of Physical Sciences
- P. D. Patel Institute of Applied Sciences
- Charotar University of Science and Technology (CHARUSAT)
- Changa-388421
- India
| | - Sebastian C. Peter
- New Chemistry Unit
- Jawaharlal Nehru Centre for Advanced Scientific Research
- Bengaluru 560064
- India
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