1
|
Zhang Q, Zhang D, Liao Z, Cao YB, Kumar M, Poddar S, Han J, Hu Y, Lv H, Mo X, Srivastava AK, Fan Z. Perovskite Light-Emitting Diodes with Quantum Wires and Nanorods. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405418. [PMID: 39183527 DOI: 10.1002/adma.202405418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2024] [Revised: 06/22/2024] [Indexed: 08/27/2024]
Abstract
Perovskite materials, celebrated for their exceptional optoelectronic properties, have seen extensive application in the field of light-emitting diodes (LEDs), where research is as abundant as the proverbial "carloads of books." In this review, the research of perovskite materials is delved into from a dimensional perspective, with a focus on the exemplary performance of low-dimensional perovskite materials in LEDs. This discussion predominantly revolves around perovskite quantum wires and perovskite nanorods. Perovskite quantum wires are versatile in their growth, compatible with both solution-based and vapor-phase growth, and can be deposited over large areas-even on spherical substrates-to achieve commendable electroluminescence (EL). Perovskite nanorods, on the other hand, boast a suite of superior characteristics, such as polarization properties and tunability of the transition dipole moment, endowing them with the great potential to enhance light extraction efficiency. Furthermore, zero-dimensional (0D) perovskite materials like nanocrystals (NCs) are also the subject of widespread research and application. This review reflects on and synthesizes the unique qualities of the aforementioned materials while exploring their vital roles in the development of high-efficiency perovskite LEDs (PeLEDs).
Collapse
Affiliation(s)
- Qianpeng Zhang
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Daquan Zhang
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Zebing Liao
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Yang Bryan Cao
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Mallem Kumar
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Swapnadeep Poddar
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Junchao Han
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Ying Hu
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Hualiang Lv
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoliang Mo
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Abhishek Kumar Srivastava
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Zhiyong Fan
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| |
Collapse
|
2
|
Purcell-Milton F, Kuznetsova VA, Bai X, Coogan Á, Martínez-Carmona M, Garcia JA, Bradley AL, Gun'ko YK. Chiroptically active quantum nanonails. NANOSCALE HORIZONS 2024; 9:1013-1022. [PMID: 38597212 DOI: 10.1039/d4nh00015c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
In recent years, extensive research efforts have been dedicated to the investigation of CdSe/CdS-based quantum-confined nanostructures, driven by their distinctive properties. The morphologies of these nanostructures have been shown to directly affect their properties, an area which has proven to be an important field of study. Herein, we report a new morphology of CdSe/CdS core-shell heterostructures in the form of a 'nanonail' - a modified nanorod-like morphology, in which a distinctive triangular head can be observed at one end of the structure. In-depth studies of this morphology reveal a material with tuneable rod length and width, as well as exceptional photoluminescent properties. Following this, we have demonstrated the ability to induce chiroptical activity via ligand exchange, revealing the important role of the specific morphology, shell thickness and chiral ligand concentration in the effect of ligand induced chirality. In addition, the cellular uptake and cytotoxicity of obtained chiral nanostructures were evaluated on human lung-derived A549 cancer cells, revealing a significant enantioselectivity in biological activity. Finally, analysis on monolayers of the material demonstrate the complete absence of FRET processes. Overall, this CdSe/CdS heterostructure is another tuneable morphology of a very important nanomaterial, one which shows great advantages and a range of potential applications.
Collapse
Affiliation(s)
- Finn Purcell-Milton
- School of Chemistry, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin, Ireland.
- School of Chemical & BioPharmaceutical Sciences, Technological University Dublin, Grangegorman, Dublin, Ireland
| | - Vera A Kuznetsova
- School of Chemistry, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin, Ireland.
| | - Xue Bai
- School of Chemistry, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin, Ireland.
| | - Áine Coogan
- School of Chemistry, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin, Ireland.
| | - Marina Martínez-Carmona
- Departamento de Didáctica de las Ciencias Experimentales, Universidad de Murcia, 30100 Murcia, Spain
| | - Jorge A Garcia
- School of Physics, Trinity College Dublin, Dublin 2, Ireland
| | | | - Yurii K Gun'ko
- School of Chemistry, CRANN and AMBER Research Centres, Trinity College Dublin, Dublin, Ireland.
| |
Collapse
|
3
|
Zeng Y, Liu X, Liu Y, Chen W, Liu F, Li H. 22% Record Efficiency in Nanorod Light-Emitting Diodes Achieved by Gradient Shells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310705. [PMID: 38377984 DOI: 10.1002/adma.202310705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2023] [Revised: 01/08/2024] [Indexed: 02/22/2024]
Abstract
The external quantum efficiency (EQE) in light-emitting diodes (LEDs) based on isotropic quantum dots has approached the theoretical limit of close to 20%. Anisotropic nanorods can break this limit by taking advantage of their directional emission. However, the progress towards higher EQE by using CdSe/CdS nanorods (NRs) faces several challenges, primarily involving the low quantum yield and unbalanced charge injection in devices. Herein, the seeded growth method is modified and anisotropic nanorods are obtained with photoluminescence quantum yield up to 98% by coating a gradient alloyed CdZnSe shell around conventional spherical CdSe seeds. This intermediate alloyed CdZnSe shell combined with a subsequent rod-shaped CdZnS/ZnS shell can effectively suppress the electron delocalization in the typical CdSe/CdS nanorods due to their small conduction bandgap offset. Additionally, this alloyed shell can reduce the hole-injection barrier and create a larger barrier for electron injection, both effects promoting a balanced injection of electrons and holes in LEDs. Hence, LEDs are reached with high brightness (160341 cd m-2) and high efficiency (EQE = 22%, current efficiency = 23.19 cd A-1), which are the highest values to date for nanorod LEDs.
Collapse
Affiliation(s)
- Yicheng Zeng
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Xiaonan Liu
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Yuan Liu
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
| | - Weiwei Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Fangze Liu
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing, 100081, China
| | - Hongbo Li
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| |
Collapse
|
4
|
Dalui A, Ariga K, Acharya S. Colloidal semiconductor nanocrystals: from bottom-up nanoarchitectonics to energy harvesting applications. Chem Commun (Camb) 2023; 59:10835-10865. [PMID: 37608724 DOI: 10.1039/d3cc02605a] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
Colloidal semiconductor nanocrystals (NCs) have been extensively investigated owing to their unique properties induced by the quantum confinement effect. The advent of colloidal synthesis routes led to the design of stable colloidal NCs with uniform size, shape, and composition. Metal oxides, phosphides, and chalcogenides (ZnE, CdE, PbE, where E = S, Se, or Te) are few of the most important monocomponent semiconductor NCs, which show excellent optoelectronic properties. The ability to build quantum confined heterostructures comprising two or more semiconductor NCs offer greater customization and tunability of properties compared to their monocomponent counterparts. More recently, the halide perovskite NCs showed exceptional optoelectronic properties for energy generation and harvesting applications. Numerous applications including photovoltaic, photodetectors, light emitting devices, catalysis, photochemical devices, and solar driven fuel cells have demonstrated using these NCs in the recent past. Overall, semiconductor NCs prepared via the colloidal synthesis route offer immense potential to become an alternative to the presently available device applications. This feature article will explore the progress of NCs syntheses with outstanding potential to control the shape and spatial dimensionality required for photovoltaic, light emitting diode, and photocatalytic applications. We also attempt to address the challenges associated with achieving high efficiency devices with the NCs and possible solutions including interface engineering, packing control, encapsulation chemistry, and device architecture engineering.
Collapse
Affiliation(s)
- Amit Dalui
- Department of Chemistry, Jogamaya Devi College, Kolkata-700026, India
| | - Katsuhiko Ariga
- Graduate School of Frontier Sciences, The University of Tokyo Kashiwa, Chiba 277-8561, Japan
- International Research Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
| | - Somobrata Acharya
- School of Applied and Interdisciplinary Sciences, Indian Association for the Cultivation of Science, Kolkata-700032, India.
| |
Collapse
|
5
|
Mallem K, Prodanov MF, Dezhang C, Marus M, Kang C, Shivarudraiah SB, Vashchenko VV, Halpert JE, Srivastava AK. Solution-Processed Red, Green, and Blue Quantum Rod Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2022; 14:18723-18735. [PMID: 35417119 DOI: 10.1021/acsami.2c04466] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Solution-processed semiconductor nanocrystals are evolving as potential candidates for future display and lighting applications owing to their size-tunable emission, ultrasaturated colors, and compatibility with large-area flexible substrates. Among them, quantum rods (QRs) are emerging materials for optoelectronic applications, offering polarized emission, high light outcoupling efficiency, color purity, and better stability in solid films. However, synthesizing QRs covering the full visible wavelength region has been a big challenge, particularly in the blue range. Herein, we report for the first time the synthesis of red CdSe/CdS, green CdSe/ZnxCd1-xS/ZnS, and blue CdSe/ZnxCd1-xS/ZnS QRs and their application in red, green, and blue QR-based light-emitting diodes (QR-LEDs). We have improved the charge injection balance into the QRs through embedding a poly(methyl methacrylate) (PMMA) layer between the emissive and electron transport layers. The thin PMMA electron-blocking layer (EBL) suppresses the excessive electron flux and thus promotes charge injection balance and pushes the recombination zone back to the QR layer, resulting in 1.35×, 1.2×, and 1.7× peak external quantum efficiency improvement for red, green, and blue QR-LEDs, respectively. The efficiency roll-off of green and blue QR-LEDs with an EBL is less than 50% at maximum current density. The proposed red, green, and blue QR-LEDs open up an avenue toward further improving the light source efficiency and stability focusing on real device applications.
Collapse
Affiliation(s)
- Kumar Mallem
- State Key Laboratory on Advanced Displays and Optoelectronics Technologies and Centre for Display Research, Department of Electronics and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, China
| | - Maksym F Prodanov
- State Key Laboratory on Advanced Displays and Optoelectronics Technologies and Centre for Display Research, Department of Electronics and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, China
| | - Chen Dezhang
- Department of Chemistry, Hong Kong University of Science and Technology (HKUST), Clear Water Bay Road, Kowloon, Hong Kong 999077, China
| | - Mikita Marus
- State Key Laboratory on Advanced Displays and Optoelectronics Technologies and Centre for Display Research, Department of Electronics and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, China
| | - Chengbin Kang
- State Key Laboratory on Advanced Displays and Optoelectronics Technologies and Centre for Display Research, Department of Electronics and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, China
| | - Sunil B Shivarudraiah
- Department of Chemistry, Hong Kong University of Science and Technology (HKUST), Clear Water Bay Road, Kowloon, Hong Kong 999077, China
| | - Valeri V Vashchenko
- State Key Laboratory on Advanced Displays and Optoelectronics Technologies and Centre for Display Research, Department of Electronics and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, China
| | - Jonathan E Halpert
- Department of Chemistry, Hong Kong University of Science and Technology (HKUST), Clear Water Bay Road, Kowloon, Hong Kong 999077, China
| | - Abhishek K Srivastava
- State Key Laboratory on Advanced Displays and Optoelectronics Technologies and Centre for Display Research, Department of Electronics and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, China
| |
Collapse
|
6
|
Song Y, Liu R, Wang Z, Xu H, Ma Y, Fan F, Voznyy O, Du J. Enhanced emission directivity from asymmetrically strained colloidal quantum dots. SCIENCE ADVANCES 2022; 8:eabl8219. [PMID: 35196093 PMCID: PMC8865764 DOI: 10.1126/sciadv.abl8219] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/07/2021] [Accepted: 12/28/2021] [Indexed: 06/14/2023]
Abstract
Current state-of-the-art quantum dot light-emitting diodes have reached close to unity internal quantum efficiency. Further improvement in external quantum efficiency requires more efficient photon out-coupling. Improving the directivity of the photon emission is considered to be the most feasible approach. Here, we report improved emission directivity from colloidal quantum dot films. By growing an asymmetric compressive shell, we are able to lift their band-edge state degeneracy, which leads to an overwhelming population of exciton with in-plane dipole moment, as desired for high-efficiency photon out-coupling. The in-plane dipole proportion determined by back-focal plane imaging method is 88%, remarkably higher than 70% obtained from conventional hydrostatically strained colloidal quantum dots. Enhanced emission directivity obtained here opens a path to increasing the external quantum efficiencies notably.
Collapse
Affiliation(s)
- Yang Song
- Hefei National Laboratory for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Microscale Magnetic Resonance, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Ruixiang Liu
- Hefei National Laboratory for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Microscale Magnetic Resonance, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhibo Wang
- Department of Physical and Environmental Sciences, University of Toronto Scarborough, Toronto, Ontario M1C 1A4, Canada
| | - Huaiyu Xu
- CAS Key Laboratory of Microscale Magnetic Resonance, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Yong Ma
- College of Photoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha 410082, China
| | - Fengjia Fan
- Hefei National Laboratory for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Microscale Magnetic Resonance, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Oleksandr Voznyy
- Department of Physical and Environmental Sciences, University of Toronto Scarborough, Toronto, Ontario M1C 1A4, Canada
| | - Jiangfeng Du
- Hefei National Laboratory for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Microscale Magnetic Resonance, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| |
Collapse
|
7
|
Zhang X, Zhang Z, Liu Y, Shi S, Zhang Y, Cao Y, Li L, Geng C, Xia Y, Zhu J, Xu S. Nonradiative Energy Transfer from CsPbBr 3 Nanocrystals to CdSe/CdS Nanocrystals for Efficient Light Down Conversion. J Phys Chem Lett 2021; 12:11710-11716. [PMID: 34846910 DOI: 10.1021/acs.jpclett.1c03656] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Semiconductor nanocrystals (NCs) are emerging luminescent materials with superior optical properties. However, the light-conversion application of NCs is restricted by reabsorption-induced fluorescent quenching. Here, a NC-NC Förster resonance energy transfer (FRET) system is developed by employing large CsPbBr3 NCs as donors and CdSe/CdS NCs as acceptors. The FRET systems using toluene and octadecene as solvents show decreases of 10% and 14%, respectively, in the integrated photoluminescence (PL) intensity, far below the reabsorption loss observed in concentrated CdSe/CdS NCs (>30%) at the same color purity. Notably, we demonstrate by transient absorption measurements that the styrene-mediated FRET system involves a Dexter energy transfer process, which enables the harvesting of triplet excitons and leads to an additional PL enhancement at system level by a maximum of 40% instead of fluorescence quenching. The remarkably improved light-conversion efficiency and antiquenching property make the proposed NC-NC system superior in light down-conversion applications.
Collapse
Affiliation(s)
- Xinsu Zhang
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - Zhibin Zhang
- National Key Laboratory of Science and Technology on Tunable Laser, School of Astronautics, Harbin Institute of Technology, 92 Xidazhi Road, Harbin 150080, P. R. China
| | - Yixuan Liu
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - ShuangShuang Shi
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - Yuan Zhang
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - Yue Cao
- State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, 163 Xianlin Road, Nanjing 210023, P. R. China
| | - Lingling Li
- State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, 163 Xianlin Road, Nanjing 210023, P. R. China
| | - Chong Geng
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - Yuanqin Xia
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - JunJie Zhu
- State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, 163 Xianlin Road, Nanjing 210023, P. R. China
| | - Shu Xu
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| |
Collapse
|
8
|
Li Y, Shen L, Pun EYB, Lin H. All-inorganic perovskite quantum dots-based electrospun polyacrylonitrile fiber for ultra-sensitive trace-recording. NANOTECHNOLOGY 2021; 33:095708. [PMID: 34798625 DOI: 10.1088/1361-6528/ac3b83] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2021] [Accepted: 11/19/2021] [Indexed: 06/13/2023]
Abstract
All-inorganic dual-phase CsPbBr3-Cs4PbBr6quantum dots (CPB QDs)-based polyacrylonitrile (PAN) fiber synthesized by supersaturated recrystallization and electrospinning technique possesses characteristics of homogeneous morphology, high crystallinity and solution sensitivity. Under 365 nm laser excitation, CPB@PAN fiber exhibits surprising trace-recording capability attributing to the splash-enhanced fluorescence (FL) performance with a narrow-band emission at 477-515 nm. In the process of ethanol anhydrous (EA) and water splashing, the CPB@PAN fiber presents conspicuous blue and green emission when contacting with EA and water, and maintains intense blue and green FL for more than 4 months. These experimental and theoretical findings provide a facile technology for the development of biological protection display, biotic detection and moisture-proof forewarning based on the trace-recording performance of CPB@PAN fiber.
Collapse
Affiliation(s)
- Yanyan Li
- School of Textile and Material Engineering, Dalian Polytechnic University, Dalian 116034, People's Republic of China
| | - Lifan Shen
- School of Textile and Material Engineering, Dalian Polytechnic University, Dalian 116034, People's Republic of China
- College of Microelectronics and Key Laboratory of Optoelectronics Technology, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, People's Republic of China
| | - Edwin Yue Bun Pun
- Department of Electrical Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong Special Administrative Region, People's Republic of China
| | - Hai Lin
- School of Textile and Material Engineering, Dalian Polytechnic University, Dalian 116034, People's Republic of China
- Department of Electrical Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong Special Administrative Region, People's Republic of China
| |
Collapse
|
9
|
Photonic Cavity Effects for Enhanced Efficiency in Layered Perovskite-Based Light-Emitting Diodes. NANOMATERIALS 2021; 11:nano11112947. [PMID: 34835709 PMCID: PMC8622141 DOI: 10.3390/nano11112947] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/03/2021] [Revised: 10/25/2021] [Accepted: 11/01/2021] [Indexed: 12/13/2022]
Abstract
Layered architectures for light-emitting diodes (LEDs) are the standard approach for solution-processable materials such as metal-halide perovskites. Upon designing the composition and thicknesses of the layers forming the LED, the primary focus is typically on the optimization of charge injection and balance. However, this approach only considers the process until electrons and holes recombine to generate photons, while for achieving optimized LED performance, the generated light must also be efficiently outcoupled. Our work focuses on the latter aspect. We assume efficient photon generation and analyze the effects of the geometrical configuration together with the dipole orientation, mimicking the light emission, on the main characteristics defining the LED, such as the Purcell effect and the outcoupling efficiency. We find that in-plane dipoles result in significantly increased outcoupling efficiency. Furthermore, the mismatch in refractive index among the layers and their different thicknesses can be tuned to maximize the Purcell effect and minimize internal losses. The combined optimization of dipole orientation and layer thicknesses can improve the efficiency of the LED up to a factor 10, hence highlighting the importance of considering also the photonic properties of the LED structures if the objective is to maximize the LED performance.
Collapse
|
10
|
Cui J, Liu Y, Deng Y, Lin C, Fang Z, Xiang C, Bai P, Du K, Zuo X, Wen K, Gong S, He H, Ye Z, Gao Y, Tian H, Zhao B, Wang J, Jin Y. Efficient light-emitting diodes based on oriented perovskite nanoplatelets. SCIENCE ADVANCES 2021; 7:eabg8458. [PMID: 34623917 PMCID: PMC8500509 DOI: 10.1126/sciadv.abg8458] [Citation(s) in RCA: 44] [Impact Index Per Article: 14.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Solution-processed planar perovskite light-emitting diodes (LEDs) promise high-performance and cost-effective electroluminescent devices ideal for large-area display and lighting applications. Exploiting emission layers with high ratios of horizontal transition dipole moments (TDMs) is expected to boost the photon outcoupling of planar LEDs. However, LEDs based on anisotropic perovskite nanoemitters remain to be inefficient (external quantum efficiency, EQE <5%) due to the difficulties of simultaneously controlling the orientations of TDMs, achieving high photoluminescence quantum yields (PLQYs) and realizing charge balance in the films of assembled nanostructures. Here, we demonstrate efficient electroluminescence from an in situ grown perovskite film composed of a monolayer of face-on oriented nanoplatelets. The ratio of horizontal TDMs of the perovskite nanoplatelet film is ~84%, which leads to a light-outcoupling efficiency of ~31%, substantially higher than that of isotropic emitters (~23%). In consequence, LEDs with a peak EQE of 23.6% are achieved, representing highly efficient planar perovskite LEDs.
Collapse
Affiliation(s)
- Jieyuan Cui
- Zhejiang Key Laboratory for Excited-State Materials, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Yang Liu
- Zhejiang Key Laboratory for Excited-State Materials, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yunzhou Deng
- Zhejiang Key Laboratory for Excited-State Materials, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Chen Lin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zhishan Fang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Chensheng Xiang
- Centre of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Peng Bai
- China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Kai Du
- Centre of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xiaobing Zuo
- X-Ray Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439, USA
| | - Kaichuan Wen
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Centre for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Shaolong Gong
- Department of Chemistry, Hubei Key Lab on Organic and Polymeric Optoelectronic Materials, Wuhan University, Wuhan 430072, China
| | - Haiping He
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zhizhen Ye
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- ZJU-WZ Novel Materials Science & Technology Innovation Center, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Corresponding author. (Z.Y.); (Y.J.)
| | - Yunan Gao
- China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - He Tian
- Centre of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Baodan Zhao
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Centre for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yizheng Jin
- Zhejiang Key Laboratory for Excited-State Materials, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
- Corresponding author. (Z.Y.); (Y.J.)
| |
Collapse
|
11
|
Rhee S, Jung D, Kim D, Lee DC, Lee C, Roh J. Polarized Electroluminescence Emission in High-Performance Quantum Rod Light-Emitting Diodes via the Langmuir-Blodgett Technique. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2101204. [PMID: 34242488 DOI: 10.1002/smll.202101204] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2021] [Revised: 05/30/2021] [Indexed: 06/13/2023]
Abstract
Due to their anisotropic structure, quantum rods (QRs) feature unique properties that differ from quantum dots, such as suppression of non-radiative Auger recombination and linearly polarized light emission. Despite many potential advantages, the progress of QR-based light-emitting diodes (QR-LEDs) is left behind due to the difficulty in aligning QRs. In this study, polarized electroluminescence emission is reported in high-performance QR-LEDs by employing the Langmuir-Blodgett (LB) technique. The adoption of the LB technique successfully produces a highly dense and smooth QR film with a high degree of alignment. As a result, the aligned QR films exhibit polarized photoluminescence emission with a degree of linear polarization of 2.1. Advantageous features of the LB technique, such as nondestructiveness, precise thickness control, and the nonnecessity of an additional matrix material, allow to fabricate QR-LEDs with the same procedure as the standard spin coating-based scheme. The device is fabricated via the LB technique, which shows excellent device performance, such as the low turn-on voltage of 1.8 V, peak luminance of 56 287 cd m-2 , and peak external quantum efficiency (EQE) of 10.33%. Furthermore, these devices clearly exhibit an indication of polarized electroluminescence emission, which opens new opportunities for QRs in display technologies.
Collapse
Affiliation(s)
- Seunghyun Rhee
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Republic of Korea
| | - Dongju Jung
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Dahin Kim
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Changhee Lee
- Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Republic of Korea
| | - Jeongkyun Roh
- Department of Electrical Engineering, Pusan National University, Busan, 46241, Republic of Korea
| |
Collapse
|
12
|
Lesiak A, Banski M, Halicka K, Cabaj J, Żak A, Podhorodecki A. pH-dependent fluorescence of thiol-coated CdSe/CdS quantum dots in an aqueous phase. NANOTECHNOLOGY 2021; 32:075705. [PMID: 33105119 DOI: 10.1088/1361-6528/abc4a0] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The results presented in this paper show how the optical properties and colloidal stability of quantum dots (QDs) vary depending on pH conditions. For this investigation, as-synthesized hydrophobic CdSe/CdS QDs were transferred to an aqueous medium by surface modification with 3-mercaptopropionic acid. The ligand exchange procedure was applied under three different pH conditions: acidic, neutral and alkaline, to obtain three kinds of hydrophilic QDs dispersed in phosphate buffer. The efficiency of the functionalization of QDs was estimated based on the changes in ABS and the highest value was obtained under acidic conditions (45%). The efficiency of photoluminescence (PL) was also best preserved under these conditions, although it was 30 times less than the PL of hydrophobic QDs. Then, all three kinds of hydrophilic QDs were dispersed in solutions with a wide range of pH (2-12) and investigated by absorbance and PL measurements. The results show that QDs subjected to a ligand exchange procedure are characterized by intensive PL at the selected pH values, which correspond to pKa of the ligand. This phenomenon is independent of the pH at which the ligand exchange procedure is conducted. Moreover, it was found that the PL intensity is preserved during the experiment for QDs functionalized under neutral conditions, whereas it decreases for acidic and increases for alkaline conditions.
Collapse
Affiliation(s)
- Anna Lesiak
- Wroclaw University of Science and Technology, Faculty of Chemistry and Faculty of Fundamental Problems of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
| | - Mateusz Banski
- Wroclaw University of Science and Technology, Faculty of Fundamental Problems of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
| | - Kinga Halicka
- Wroclaw University of Science and Technology, Faculty of Chemistry, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
| | - Joanna Cabaj
- Wroclaw University of Science and Technology, Faculty of Chemistry, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
| | - Andrzej Żak
- Wroclaw University of Science and Technology, Faculty of Mechanical Engineering, Electron Microscopy Laboratory, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
| | - Artur Podhorodecki
- Wroclaw University of Science and Technology, Faculty of Fundamental Problems of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
| |
Collapse
|
13
|
Chen M, Xu L, Wang J, Liu B, Wang K, Qi Q, Zhu Y, Yang X, Chai W, Yang P, Zhang W, Liu J, Jia G, Zhang S, Du J. Fe-Ion-Catalyzed Synthesis of CdSe/Cu Core/Shell Nanowires. Inorg Chem 2021; 60:2614-2622. [DOI: 10.1021/acs.inorgchem.0c03488] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Affiliation(s)
- Mao Chen
- Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, PR China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China
| | - Lekai Xu
- State Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, No. 1 Beiertiao, Zhongguancun, Beijing, 100109, PR China
| | - Jiao Wang
- Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, PR China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China
| | - Baokun Liu
- Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, PR China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China
| | - Kun Wang
- Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, PR China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China
| | - Qi Qi
- Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, PR China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China
| | - Yaqiong Zhu
- Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, PR China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China
| | - Xin Yang
- Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, PR China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China
| | - Wencui Chai
- School of Chemical Engineering and Energy, Zhengzhou University, Zhengzhou 450001, PR China
| | - Peixu Yang
- Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, PR China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China
| | - Weidong Zhang
- Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, PR China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China
| | - Jinhui Liu
- Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, PR China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China
| | - Guanwei Jia
- School of Physics and Electronics, Henan University, Kaifeng 475004, PR China
| | - Shaojun Zhang
- Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, PR China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China
| | - Jiang Du
- Henan Province Industrial Technology Research Institute of Resources and Materials, Zhengzhou University, Zhengzhou 450001, PR China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, PR China
| |
Collapse
|
14
|
Pokhriyal S, Biswas S. Photoresponse of CdSe-PVA nanocomposite films at low magnetic fields. NANOTECHNOLOGY 2020; 31:495205. [PMID: 32990266 DOI: 10.1088/1361-6528/abb0b7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A set of nanocomposite films of poly-vinyl alcohol (PVA) and 0.1-0.4 wt% CdSe nanoparticles (NPs) were developed by spin coating and their surface resistance (R) was measured as a function of light illumination intensity (IL ) and applied magnetic field (H). The ferromagnetic CdSe NPs were synthesized by a facile chemical method which ensured in situ surface stabilization with a skinny layer of graphitic carbon. The CdSe NPs were uniformly dispersed in an aqueous solution of 2.0 wt% PVA and spin-coated on fluorine-doped tin oxide coated glass substrates. The photoresponse of the nanocomposite films at low H exhibits their efficacy for pertinent applications in optoelectronics.
Collapse
Affiliation(s)
- S Pokhriyal
- Department of Physics, Poornima University, Jaipur 303905, India
- Department of Physics, The LNM Institute of Information Technology, Jaipur 302031, India
| | - S Biswas
- Department of Physics, The LNM Institute of Information Technology, Jaipur 302031, India
| |
Collapse
|
15
|
Highly Hydrophobic and Self-Cleaning Heat-Treated Larix spp. Prepared by TiO2 and ZnO Particles onto Wood Surface. COATINGS 2020. [DOI: 10.3390/coatings10100986] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The deposition of TiO2/ZnO on heat-treated wood was prepared by a hydrothermal reaction and sol-gel method. Highly hydrophobic wood was successfully prepared with low surface free energy. The surface-modified wood samples were characterized by 3D-laser shape measurement microscopy, scanning electron microscopy, energy-dispersive spectroscopy, and Fourier transform infrared spectroscopy for the microstructure and chemical composition investigation. The deposited TiO2 or ZnO markedly made the wood surface brighter, which was demonstrated by visual observation and spectrophotometer. The TiO2/ZnO particles were successfully loaded onto the surface of the wood, proven by SEM-EDS and FTIR analyses. The contact angle of TiO2 and ZnO-modified wood reached 123.9° and 134.1° respectively, which is obviously higher than that of the control at 88.9°. The hydrophobic properties of the TiO2/ZnO modified wood samples were directly related to the shapes of clusters and spheres of particles, which increased the roughness of the wood surface. This study shows the hydrophobic properties of the TiO2/ZnO-modified wood and provides the color and roughness changes for the painting process of heat-treated wood.
Collapse
|
16
|
Luo D, Wang L, Qiu Y, Huang R, Liu B. Emergence of Impurity-Doped Nanocrystal Light-Emitting Diodes. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E1226. [PMID: 32599722 PMCID: PMC7353084 DOI: 10.3390/nano10061226] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/26/2020] [Revised: 06/17/2020] [Accepted: 06/17/2020] [Indexed: 11/16/2022]
Abstract
In recent years, impurity-doped nanocrystal light-emitting diodes (LEDs) have aroused both academic and industrial interest since they are highly promising to satisfy the increasing demand of display, lighting, and signaling technologies. Compared with undoped counterparts, impurity-doped nanocrystal LEDs have been demonstrated to possess many extraordinary characteristics including enhanced efficiency, increased luminance, reduced voltage, and prolonged stability. In this review, recent state-of-the-art concepts to achieve high-performance impurity-doped nanocrystal LEDs are summarized. Firstly, the fundamental concepts of impurity-doped nanocrystal LEDs are presented. Then, the strategies to enhance the performance of impurity-doped nanocrystal LEDs via both material design and device engineering are introduced. In particular, the emergence of three types of impurity-doped nanocrystal LEDs is comprehensively highlighted, namely impurity-doped colloidal quantum dot LEDs, impurity-doped perovskite LEDs, and impurity-doped colloidal quantum well LEDs. At last, the challenges and the opportunities to further improve the performance of impurity-doped nanocrystal LEDs are described.
Collapse
Affiliation(s)
- Dongxiang Luo
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, China;
| | - Lin Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore;
| | - Ying Qiu
- Guangdong R&D Center for Technological Economy, Guangzhou 510000, China
| | - Runda Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China;
| | - Baiquan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| |
Collapse
|
17
|
Luo D, Chen Q, Qiu Y, Zhang M, Liu B. Device Engineering for All-Inorganic Perovskite Light-Emitting Diodes. NANOMATERIALS (BASEL, SWITZERLAND) 2019; 9:E1007. [PMID: 31336905 PMCID: PMC6669542 DOI: 10.3390/nano9071007] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/10/2019] [Revised: 07/04/2019] [Accepted: 07/10/2019] [Indexed: 01/12/2023]
Abstract
Recently, all-inorganic perovskite light-emitting diodes (PeLEDs) have attracted both academic and industrial interest thanks to their outstanding properties, such as high efficiency, bright luminance, excellent color purity, low cost and potentially good operational stability. Apart from the design and treatment of all-inorganic emitters, the device engineering is another significant factor to guarantee the high performance. In this review, we have summarized the state-of-the-art concepts for device engineering in all-inorganic PeLEDs, where the charge injection, transport, balance and leakage play a critical role in the performance. First, we have described the fundamental concepts of all-inorganic PeLEDs. Then, we have introduced the enhancement of device engineering in all-inorganic PeLEDs. Particularly, we have comprehensively highlighted the emergence of all-inorganic PeLEDs, strategies to improve the hole injection, approaches to enhance the electron injection, schemes to increase the charge balance and methods to decrease the charge leakage. Finally, we have clarified the issues and ways to further enhance the performance of all-inorganic PeLEDs.
Collapse
Affiliation(s)
- Dongxiang Luo
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
| | - Qizan Chen
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
| | - Ying Qiu
- Guangdong R&D Center for Technological Economy, Guangzhou 510000, China.
| | - Menglong Zhang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
- Institute of Semiconductors, South China Normal University, Guangzhou 510000, China
| | - Baiquan Liu
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.
- LUMINOUS! Centre of Excellent for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore.
| |
Collapse
|
18
|
Efficient White LEDs Using Liquid-state Magic-sized CdSe Quantum Dots. Sci Rep 2019; 9:10061. [PMID: 31296920 PMCID: PMC6624196 DOI: 10.1038/s41598-019-46581-2] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2019] [Accepted: 06/27/2019] [Indexed: 12/05/2022] Open
Abstract
Magic clusters have attracted significant interest to explore the dynamics of quantum dot (QD) nucleation and growth. At the same time, CdSe magic-sized QDs reveal broadband emission in the visible wavelength region, which advantageously offer simple integration of a single-type of nanomaterial and high color rendering ability for white light-emitting diodes (LEDs). Here, we optimized the quantum yield of magic-sized CdSe QDs up to 22% via controlling the synthesis parameters without any shelling or post-treatment process and integrated them in liquid-state on blue LED to prevent the efficiency drop due to host-material effect. The fabricated white LEDs showed color-rendering index and luminous efficiency up to 89 and 11.7 lm/W, respectively.
Collapse
|
19
|
Jia J, Xue P, Hu X, Wang Y, Liu E, Fan J. Electron-transfer cascade from CdSe@ZnSe core-shell quantum dot accelerates photoelectrochemical H2 evolution on TiO2 nanotube arrays. J Catal 2019. [DOI: 10.1016/j.jcat.2019.05.028] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
|
20
|
Lin ML, Miscuglio M, Polovitsyn A, Leng YC, Martín-García B, Moreels I, Tan PH, Krahne R. Giant-Shell CdSe/CdS Nanocrystals: Exciton Coupling to Shell Phonons Investigated by Resonant Raman Spectroscopy. J Phys Chem Lett 2019; 10:399-405. [PMID: 30626187 DOI: 10.1021/acs.jpclett.8b03211] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The interaction between excitons and phonons in semiconductor nanocrystals plays a crucial role in the exciton energy spectrum and dynamics, and thus in their optical properties. We investigate the exciton-phonon coupling in giant-shell CdSe/CdS core-shell nanocrystals via resonant Raman spectroscopy. The Huang-Rhys parameter is evaluated by the intensity ratio of the longitudinal-optical (LO) phonon of CdS with its first multiscattering (2LO) replica. We used four different excitation wavelengths in the range from the onset of the CdS shell absorption to well above the CdS shell band edge to get insight into resonance effects of the CdS LO phonon with high-energy excitonic transitions. The isotropic spherical giant-shell nanocrystals show consistently stronger exciton-phonon coupling as compared to the anisotropic rod-shaped dot-in-rod (DiR) architecture, and the 2LO/LO intensity ratio decreases for excitation wavelengths approaching the CdS band edge. The strong exciton-phonon coupling in the spherical giant-shell nanocrystals can be related to the delocalization of the electronic wave functions. Furthermore, we observe the radial breathing modes of the GS nanocrystals and their overtones by ultralow frequency Raman spectroscopy with nonresonant excitation, using laser energies well below the band gap of the heteronanocrystals, and highlight the differences between higher-order optical and acoustic phonon modes.
Collapse
Affiliation(s)
- Miao-Ling Lin
- State Key Laboratory of Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Mario Miscuglio
- Istituto Italiano di Tecnologia (IIT) , Via Morego 30 , 16163 Genoa , Italy
| | - Anatolii Polovitsyn
- Department of Chemistry , Ghent University , Krijgslaan 281-S3 , 9000 Gent , Belgium
| | - Yu-Chen Leng
- State Key Laboratory of Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation , University of Chinese Academy of Sciences , Beijing 100190 , China
| | | | - Iwan Moreels
- Department of Chemistry , Ghent University , Krijgslaan 281-S3 , 9000 Gent , Belgium
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Roman Krahne
- Istituto Italiano di Tecnologia (IIT) , Via Morego 30 , 16163 Genoa , Italy
| |
Collapse
|
21
|
Jin H, Moon H, Lee W, Hwangbo H, Yong SH, Chung HK, Chae H. Charge balance control of quantum dot light emitting diodes with atomic layer deposited aluminum oxide interlayers. RSC Adv 2019; 9:11634-11640. [PMID: 35517031 PMCID: PMC9063432 DOI: 10.1039/c9ra00145j] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2019] [Accepted: 04/03/2019] [Indexed: 12/01/2022] Open
Abstract
We developed a 1.0 nm thick aluminum oxide (Al2O3) interlayer as an electron blocking layer to reduce leakage current and suppress exciton quenching induced by charge imbalance in inverted quantum dot light emitting diodes (QLEDs). The Al2O3 interlayer was deposited by an atomic layer deposition (ALD) process that allows precise thickness control. The Al2O3 interlayer lowers the mobility of electrons and reduces Auger recombination which causes the degradation of device performance. A maximum current efficiency of 51.2 cd A−1 and an external quantum efficiency (EQE) of 12.2% were achieved in the inverted QLEDs with the Al2O3 interlayer. The Al2O3 interlayer increased device efficiency by 1.1 times, increased device lifetime by 6 times, and contributed to reducing efficiency roll-off from 38.6% to 19.6% at a current density up to 150 mA cm−2. The improvement of device performance by the Al2O3 interlayer is attributed to the reduction of electron injection and exciton quenching induced by zinc oxide (ZnO) nanoparticles (NPs). This work demonstrates that the Al2O3 interlayer is a promising solution for charge control in QLEDs and that the ALD process is a reliable approach for atomic scale thickness control for QLEDs. We developed a 1.0 nm thick aluminum oxide (Al2O3) interlayer as an electron blocking layer to reduce leakage current and suppress exciton quenching induced by charge imbalance in inverted quantum dot light emitting diodes (QLEDs).![]()
Collapse
Affiliation(s)
- Hoseok Jin
- School of Chemical Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Hyungseok Moon
- School of Chemical Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Woosuk Lee
- School of Chemical Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Hyeok Hwangbo
- School of Chemical Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Sang Heon Yong
- School of Chemical Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Ho Kyoon Chung
- SKKU Advanced Institute of Nanotechnology
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Heeyeop Chae
- School of Chemical Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
- SKKU Advanced Institute of Nanotechnology
| |
Collapse
|
22
|
Qiao S, Ogata AF, Jha G, Chattopadhyay A, Penner RM. Rapid, Wet Chemical Fabrication of Radial Junction Electroluminescent Wires. ACS APPLIED MATERIALS & INTERFACES 2018; 10:35344-35353. [PMID: 30231613 DOI: 10.1021/acsami.8b10855] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A wet chemical process involving two electrodeposition steps followed by a solution casting step, the "EESC" process, is described for the fabrication of electroluminescent, radial junction wires. EESC is demonstrated by assembling three well-studied nanocrystalline (or amorphous) materials: Au, CdSe, and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). The tri-layered device architecture produced by EESC minimizes the influence of an electrically resistive CdSe emitter layer by using a highly conductive gold nanowire that serves as both a current collector and a negative electrode. Hole injection, at a high barrier CdSe-PEDOT:PSS interface (ϕh ≈ 1.1 V), is facilitated by a contact area that is 1.9-4.7-fold larger than the complimentary gold-CdSe electron-injecting contact (ϕe ≈ 0.6 V), contributing to low-voltage thresholds (1.4-1.7 V) for electroluminescence (EL) emission. Au@CdSe@PEDOT:PSS wire EL emitters are 25 μm in length, amongst the longest so far demonstrated to our knowledge, but the EESC process is scalable to nanowires of any length, limited only by the length of the central gold nanowire that serves as a template for the fabrication process. Radial carrier transport within these multishell wires conforms to the back-to-back diode model.
Collapse
Affiliation(s)
| | | | | | - Aurnov Chattopadhyay
- University High School , 4771 Campus Dr , Irvine , California 92612 , United States
| | | |
Collapse
|
23
|
Chen H, Ding K, Fan L, Liu W, Zhang R, Xiang S, Zhang Q, Wang L. All-Solution-Processed Quantum Dot Light Emitting Diodes Based on Double Hole Transport Layers by Hot Spin-Coating with Highly Efficient and Low Turn-On Voltage. ACS APPLIED MATERIALS & INTERFACES 2018; 10:29076-29082. [PMID: 30080378 DOI: 10.1021/acsami.8b06917] [Citation(s) in RCA: 30] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Poly( N, N'-bis(4-butylphenyl) N, N'-bis(phenyl)benzidine) (poly-TPD) and poly(9-vinylcarbazole) (PVK) are both traditional hole transport layers (HTLs) in quantum dot light emitting diodes (QLEDs). Nevertheless, the low highest occupied molecular orbital of poly-TPD and poor hole mobility of PVK always result in poor performance of QLEDs when individually used as HTLs. Unfortunately, fabricating stepwise HTLs with poly-TPD and PVK faces technical problems until now. We demonstrate an effective method to construct the stepwise poly-TPD and PVK HTLs by utilizing the technique of hot spin-coating PVK in m-xylene on poly-TPD film. During this hot spin-coating process, the underlying poly-TPD remains unwashed and undamaged, benefiting the all-solution-processed QLED fabrication. The optimized all-solution-processed QLED with stepwise poly-TPD and PVK HTLs shows a maximum external quantum efficiency (EQE) of 15.3% and a maximum luminance of 17 110 cd/m2 with a low turn-on voltage ( Von) of 1.75 V. The maximum EQE is about 6.6 times higher than that of the reference QLED using a cold spin-coating process. The enhancement of the QLED performance can be attributed to the improvement of surface morphology and charge injection balance for the hot spin-coating stepwise co-HTLs based QLEDs. This work manifests the positive effect on performance boost by a hot spin-coating strategy toward stepwise co-HTLs formation and paves the way to fabricate highly efficient all-solution-processed light emitting diodes.
Collapse
Affiliation(s)
- Hongting Chen
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Ke Ding
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Lianwei Fan
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Wei Liu
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Rui Zhang
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Songpo Xiang
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Qing Zhang
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Lei Wang
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| |
Collapse
|
24
|
Xiao P, Huang J, Yan D, Luo D, Yuan J, Liu B, Liang D. Emergence of Nanoplatelet Light-Emitting Diodes. MATERIALS (BASEL, SWITZERLAND) 2018; 11:E1376. [PMID: 30096754 PMCID: PMC6119858 DOI: 10.3390/ma11081376] [Citation(s) in RCA: 30] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/06/2018] [Revised: 07/19/2018] [Accepted: 07/27/2018] [Indexed: 12/20/2022]
Abstract
Since 2014, nanoplatelet light-emitting diodes (NPL-LEDs) have been emerged as a new kind of LEDs. At first, NPL-LEDs are mainly realized by CdSe based NPLs. Since 2016, hybrid organic-inorganic perovskite NPLs are found to be effective to develop NPL-LEDs. In 2017, all-inorganic perovskite NPLs are also demonstrated for NPL-LEDs. Therefore, the development of NPL-LEDs is flourishing. In this review, the fundamental concepts of NPL-LEDs are first introduced, then the main approaches to realize NPL-LEDs are summarized and the recent progress of representative NPL-LEDs is highlighted, finally the challenges and opportunities for NPL-LEDs are presented.
Collapse
Affiliation(s)
- Peng Xiao
- School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China.
| | - Junhua Huang
- School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China.
| | - Dong Yan
- School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China.
| | - Dongxiang Luo
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China.
| | - Jian Yuan
- School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China.
| | - Baiquan Liu
- LUMINOUS, Center of Excellent for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore.
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.
| | - Dong Liang
- LUMINOUS, Center of Excellent for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore.
| |
Collapse
|
25
|
Palei M, Caligiuri V, Kudera S, Krahne R. Robust and Bright Photoluminescence from Colloidal Nanocrystal/Al 2O 3 Composite Films Fabricated by Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES 2018; 10:22356-22362. [PMID: 29893110 DOI: 10.1021/acsami.8b03769] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
Colloidal nanocrystals are a promising fluorescent class of materials whose spontaneous emission features can be tuned over a broad spectral range via their composition, geometry, and size. However, toward embedding nanocrystal films in elaborated device geometries, one significant drawback is the sensitivity of their emission properties on further fabrication processes like lithography, metal or oxide deposition, etc. In this work, we demonstrate how bright-emitting and robust thin films can be obtained by combining nanocrystal deposition from solutions via spin coating with subsequent atomic layer deposition of alumina. For the resulting composite films, the layer thickness can be controlled on the nanoscale and their refractive index can be finely tuned by the amount of deposited alumina. Ellipsometry is used to measure the real and imaginary part of the dielectric permittivity, which gives direct access to the wavelength dependent refractive index and absorbance of the film. Detailed analysis of the photophysics of thin films of core-shell nanocrystals with different shapes and different shell thicknesses allows to correlate the behavior of the photoluminescence and of the decay lifetime to the changes in the nonradiative rate that are induced by the alumina deposition. We show that the photoemission properties of such composite films are stable in wavelength and intensity over several months and that the photoluminescence completely recovers from heating processes up to 240 °C. The latter is particularly interesting since it demonstrates robustness to the typical heat treatment that is needed in several process steps like resist-based lithography and deposition by thermal or electron beam evaporation of metals or oxides.
Collapse
Affiliation(s)
- Milan Palei
- Nanochemistry Department , Istituto Italiano di Tecnologia , 16163 Genova , Italy
- Dipartimento di Chimica e Chimica Industriale , Universita di Genova , 16146 Genova , Italy
| | - Vincenzo Caligiuri
- Nanochemistry Department , Istituto Italiano di Tecnologia , 16163 Genova , Italy
| | - Stefan Kudera
- Nanochemistry Department , Istituto Italiano di Tecnologia , 16163 Genova , Italy
| | - Roman Krahne
- Nanochemistry Department , Istituto Italiano di Tecnologia , 16163 Genova , Italy
| |
Collapse
|
26
|
Volk S, Yazdani N, Sanusoglu E, Yarema O, Yarema M, Wood V. Measuring the Electronic Structure of Nanocrystal Thin Films Using Energy-Resolved Electrochemical Impedance Spectroscopy. J Phys Chem Lett 2018; 9:1384-1392. [PMID: 29485880 DOI: 10.1021/acs.jpclett.8b00109] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Use of nanocrystal thin films as active layers in optoelectronic devices requires tailoring of their electronic band structure. Here, we demonstrate energy-resolved electrochemical impedance spectroscopy (ER-EIS) as a method to quantify the electronic structure in nanocrystal thin films. This technique is particularly well-suited for nanocrystal-based thin films as it allows for in situ assessment of electronic structure during solution-based deposition of the thin film. Using well-studied lead sulfide nanocrystals as an example, we show that ER-EIS can be used to probe the energy position and number density of defect or dopant states as well as the modification of energy levels in nanocrystal solids that results through the exchange of surface ligands. This work highlights that ER-EIS is a sensitive and fast method to measure the electronic structure of nanocrystal thin films and enables their optimization in optoelectronic devices.
Collapse
Affiliation(s)
- Sebastian Volk
- Department of Information Technology and Electrical Engineering , ETH Zurich , Gloriastrasse 35 , 8092 Zurich , Switzerland
| | - Nuri Yazdani
- Department of Information Technology and Electrical Engineering , ETH Zurich , Gloriastrasse 35 , 8092 Zurich , Switzerland
| | - Emir Sanusoglu
- Department of Information Technology and Electrical Engineering , ETH Zurich , Gloriastrasse 35 , 8092 Zurich , Switzerland
| | - Olesya Yarema
- Department of Information Technology and Electrical Engineering , ETH Zurich , Gloriastrasse 35 , 8092 Zurich , Switzerland
| | - Maksym Yarema
- Department of Information Technology and Electrical Engineering , ETH Zurich , Gloriastrasse 35 , 8092 Zurich , Switzerland
| | - Vanessa Wood
- Department of Information Technology and Electrical Engineering , ETH Zurich , Gloriastrasse 35 , 8092 Zurich , Switzerland
| |
Collapse
|