Balancing the Electron and Hole Transfer for Efficient Quantum Dot Light-Emitting Diodes by Employing a Versatile Organic Electron-Blocking Layer

Recent Progress on Quantum Dot Patterning Technologies for Commercialization of QD-LEDs: Current Status, Future Prospects, and Exploratory Approaches

Colloidal quantum dots (QDs) are widely regarded as advanced emissive materials with significant potential for display applications owing to their excellent optical properties such as high color purity, near-unity photoluminescence quantum yield, and size-tunable emission color. Building upon these attractive attributes, QDs have successfully garnered attention in the display market as down-conversion luminophores and now venturing into the realm of self-emissive displays, exemplified by QD light-emitting diodes (QD-LEDs). However, despite these advancements, there remains a relatively limited body of research on QD patterning technologies, which are crucial prerequisites for the successful commercialization of QD-LEDs. Thus, in this review, an overview of the current status and prospects of QD patterning technologies to accelerate the commercialization of QD-LEDs is provided. Within this review, a comprehensive investigation of three prevailing patterning methods: optical lithography, transfer printing, and inkjet printing are conducted. Furthermore, several exploratory QD patterning techniques that offer distinct advantages are introduced. This study not only paves the way for successful commercialization but also extends the potential application of QD-LEDs into uncharted frontiers.

Negative corona discharge strategy for efficient quantum dot light-emitting diodes

In colloid quantum dot light-emitting diodes (QLEDs), the control of interface states between ZnO and quantum dots (QDs) plays a vital role. We present a straightforward and efficient method using a negative corona discharge to modify the QD film, creating a dipole moment at the interface of QDs and magnesium-doped ZnO (ZnMgO) for balanced charge carrier distribution within the QDs. This process boosts external quantum efficiencies in red, green, and blue QLEDs to 17.71%, 14.53%, and 9.04% respectively. Notably, optimized devices exhibit significant enhancements, especially at lower brightness levels (1000 to 10,000 cd·m-2), vital for applications in mobile displays, TV screens, and indoor lighting.

Well-type thick-shell quantum dots combined with double hole transport layers device structure assisted realization of high-performance quantum dot light-emitting diodes

Quantum dot (QD) light-emitting diodes (QLEDs) are promising for next-generation lighting and displays. Considering the optimization design of both the QD and device structure is expected to improve the QLED's performance significantly but has rarely been reported. Here, we use the thick-shell QDs combined with a dual-hole transport layer device structure to construct a high-efficiency QLED. The optimized thick-shell QDs with CdS/CdSe/CdS/ZnS seed/spherical quantum well/shell/shell geometry exhibit a high photoluminescence quantum yield of 96% at a shell thickness of 5.9 nm. The intermediate emissive CdSe layer with coherent strain ensures defect-free growth of the thick CdS and ZnS outer shells. Based on the orthogonal solvents assisted Poly-TPD&PVK dual-hole transport layer device architecture, the champion QLED achieved a maximum external quantum efficiency of 22.5% and a maximum luminance of 259955 cd m-2, which are 1.6 and 3.7 times that of thin-shell QDs based devices with single hole transport layer, respectively. Our study provides a feasible idea for further improving the performance of QLED devices.

Stable and efficient pure blue quantum-dot LEDs enabled by inserting an anti-oxidation layer

The efficiency and stability of red and green quantum-dot light-emitting diodes have already met the requirements for commercialization in displays. However, the poor stability of the blue ones, particularly pure blue color, is hindering the commercialization of full-color quantum-dot light-emitting diode technology. Severe hole accumulation at the blue quantum-dot/hole-transport layer interface makes the hole-transport layer prone to oxidation, limiting the device operational lifetime. Here, we propose inserting an anti-oxidation layer (poly(p-phenylene benzobisoxazole)) between this interface to take in some holes from the hole-transport layer, which mitigates the oxidation-induced device degradation, enabling a T50 (time for the luminance decreasing by 50%) of more than 41,000 h with an initial brightness of 100 cd m-2 in pure blue devices. Meanwhile, the inserted transition layer facilitates hole injection and helps reduce electron leakage, leading to a peak external quantum efficiency of 23%.

Enhanced Performance and High Resistance to Efficiency Degradation of Blue Quantum-Dot Light-Emitting Diodes Using the Lewis Base Blended Hole-Transporting Layers

The distinctive characteristics of blue quantum dots (QDs) such as their deep valence band and large bandgap give rise to an elevated hole injection barrier between the hole transport layers (HTLs) and the QD active layer. This results in an imbalance of carrier transport and injection across the device, leading to a degrading performance in QD light-emitting diodes (QLEDs). In this paper, high-efficiency and low-efficiency degradation blue CdSe/CdS/ZnS QLEDs were fabricated by using the Lewis base, 1,2-bis(diphenylphosphino)ethane (DPPE), blended with poly(9-vinylcarbazole) (PVK) (DPPE:PVK) as HTLs. The device performance of blue QLEDs can be finely adjusted by manipulating the blending ratio between DPPE and PVK. When 4 wt % DPPE was blended with PVK (4 wt % DPPE:PVK) as the HTL, the device achieved its optimal performance. Compared to the device with neat PVK as the HTL, the turn-on voltage of blue QLEDs with the 4 wt % DPPE:PVK HTL is reduced from 3.21 to 2.9 V. The maximum current efficiency (CE) and external quantum efficiency (EQE) of blue QLEDs increase from 2.92 cd A-1 and 5.89% in neat PVK to 5.75 cd A-1 and 11.75% for the 4 wt % DPPE:PVK HTL. Furthermore, the QLEDs incorporating DPPE:PVK HTLs exhibited exceptional resistance to efficiency degradation (EQE = 8.83%@L = 12,000 cd m-2 for 4 wt % DPPE:PVK as the HTL and EQE = 2.80%@L = 12,000 cd m-2 for neat PVK as the HTL). A more in-depth analysis reveals that enhanced device performance results from the chelating and bridging effect of the bidentate ligand Lewis base DPPE. These effects strengthen the binding of free metal ions in the blue QDs, reduce the charge barriers, enhance the contact between the HTLs and the QD active layer, and ultimately improve hole injection.

Efficient and bright green InP quantum dot light-emitting diodes enabled by a self-assembled dipole interface monolayer

The interfacial state between the hole transport layer (HTL) and quantum dots (QDs) plays a crucial role in the optoelectronic performance of light-emitting diodes. Herein, we reported an efficient and bright green indium phosphide (InP) QD-based light-emitting diode (LED) by introducing a self-assembled monolayer of 4-bromo-2-fluorothiophenol (SAM-BFTP) molecule to improve interfacial charge transport in LED devices. The molecular dipole layer at the interface of the QD layer and HTL not only reduces the energy barrier of holes injected into QDs through vacuum energy level shift but also inhibits the fluorescence quenching of QDs caused by the HTL. Moreover, copper ions doped into phosphomolybdic acid (Cu:PMA) is selected as the hole injection layer (HIL) into the device system based on the SAM-BFTP molecule, and as a result, a green InP QD LED (QLED) with a maximum external quantum efficiency (EQE) of 8.46% and a luminance of 18 356 cd m^-2 was realized. This work can inform and underpin the future development of InP-based QLEDs with concurrent high efficiency and brightness.

Spatial Control of the Hole Accumulation Zone for Hole-Dominated Perovskite Light-Emitting Diodes by Inserting a CsAc Layer

Perovskites show efficient electroluminescence and are expected to have wide applications in light-emitting diodes (LEDs). However, owing to the unbalanced electron-hole transport properties of some highly luminescent perovskites, a fundamental challenge is that the exciton recombination zone of perovskite LEDs (PeLEDs) typically overlaps with an accumulation of the major carrier. It is known to reduce the performances of PeLEDs, leading to a reduction of efficiency and operation stability due to Auger recombination. To address this issue in a hole-dominated blue PeLED, we propose to insert a cesium acetate (CsAc) layer between the hole transport layer (HTL) and the hole-dominant perovskite layer. Electronic properties indicate that the hole accumulation zone of the device with the CsAc layer shifts away from the perovskite/ETL interface, i.e., the recombination zone, to the HTL/CsAc interface. Separation of the hole accumulation region and the exciton recombination zones substantially suppresses exciton quenching. Moreover, the CsAc layer can also improve the photophysical properties of the perovskite film by providing an extra Cs source to interact with the defect site of unreacted PbBr₂ in the perovskite film and enhance the crystallinity of the perovskite with an enlarged crystal grain size. As a result, the external quantum efficiency (EQE) of the sky-blue PeLEDs shows considerable improvement from 5.3 to 9.2% upon inserting the CsAc layer.

Improving the Performance of Solution-Processed Quantum Dot Light-Emitting Diodes via a HfOx Interfacial Layer

One of the major obstacles in the way of high-performance quantum dot light-emitting diodes (QLEDs) is the charge imbalance arising from more efficient electron injection into the emission layer than the hole injection. In previous studies, a balanced charge injection was often achieved by lowering the electron injection efficiency; however, high performance next-generation QLEDs require the hole injection efficiency to be enhanced to the level of electron injection efficiency. Here, we introduce a solution-processed HfO_x layer for the enhanced hole injection efficiency. A large amount of oxygen vacancies in the HfO_x films creates gap states that lower the hole injection barrier between the anode and the emission layer, resulting in enhanced light-emitting characteristics. The insertion of the HfO_x layer increased the luminance of the device to 166,600 cd/m², and the current efficiency and external quantum efficiency to 16.6 cd/A and 3.68%, respectively, compared with the values of 63,673 cd/m², 7.37 cd/A, and 1.64% for the device without HfO_x layer. The enhanced light-emitting characteristics of the device were elucidated by X-ray photoelectron, ultra-violet photoelectron, and UV-visible spectroscopy. Our results suggest that the insertion of the HfO_x layer is a useful method for improving the light-emitting properties of QLEDs.

All-Inorganic Perovskite Quantum Dot-Based Blue Light-Emitting Diodes: Recent Advances and Strategies

Light-emitting diodes (LEDs) based on all-inorganic lead halide perovskite quantum dots (PQDs) have undergone rapid development especially in the past five years, and external quantum efficiencies (EQEs) of the corresponding green- and red-emitting devices have exceeded 23%. However, the blue-emitting devices are facing greater challenges than their counterparts, and their poor luminous efficiency has hindered the display application of PQD-based LEDs (PeQLEDs). This review focuses on the key challenges of blue-emitting PeQLEDs including low EQEs, short operating lifetime, and spectral instability, and discusses the essential mechanism by referring to the latest research. We then systematically summarize the development of preparation methods of blue emission PQDs, as well as the current strategies on alleviating the poor device performance involved in composition engineering, ligand engineering, surface/interface engineering, and device structural engineering. Ultimately, suggestions and outlooks are proposed around the major challenges and future research direction of blue PeQLEDs.

Electroluminescent white light-emitting diodes with cadimum-free Cu-In-Zn-S nanocrystals sandwiched between two TFB layers

A high color rendering index (CRI) and stable spectra under different voltages are important parameters for large-area planar light sources. However, the spectrum of most electroluminescent white light-emitting diodes (el-WLEDs) with a single emissive layer (EML) varies with a changing voltage. Herein, an el-WLED is fabricated based on Cd-free Cu-In-Zn-S (CIZS)/ZnS nanocrystals (NCs) and poly [(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)] (TFB) as double EMLs, which exhibit white-light emission with a high CRI value of 91 and commission internationale de l'éclairage (CIE) color coordinates of (0.33, 0.33). Meanwhile, it has a stable spectrum under voltage up to 7 V and a maximum luminance up to 679 cd/m² with a low turn-on voltage of 2.2 V. This work provides a foundation for Cd-free el-WLEDs with high CRI and stable spectra.

Optimizing the PMMA Electron-Blocking Layer of Quantum Dot Light-Emitting Diodes

Quantum dots (QDs) are promising candidates for producing bright, color-pure, cost-efficient, and long-lasting QD-based light-emitting diodes (QDLEDs). However, one of the significant problems in achieving high efficiency of QDLEDs is the imbalance between the rates of charge-carrier injection into the emissive QD layer and their transport through the device components. Here we investigated the effect of the parameters of the deposition of a poly (methyl methacrylate) (PMMA) electron-blocking layer (EBL), such as PMMA solution concentration, on the characteristics of EBL-enhanced QDLEDs. A series of devices was fabricated with the PMMA layer formed from acetone solutions with concentrations ranging from 0.05 to 1.2 mg/mL. The addition of the PMMA layer allowed for an increase of the maximum luminance of QDLED by a factor of four compared to the control device without EBL, that is, to 18,671 cd/m2, with the current efficiency increased by an order of magnitude and the turn-on voltage decreased by ~1 V. At the same time, we have demonstrated that each particular QDLED characteristic has a maximum at a specific PMMA layer thickness; therefore, variation of the EBL deposition conditions could serve as an additional parameter space when other QDLED optimization approaches are being developed or implied in future solid-state lighting and display devices.

Utilization of Nanoporous Nickel Oxide as the Hole Injection Layer for Quantum Dot Light-Emitting Diodes

Nickel oxide (NiOx) has been extensively investigated as the hole injection layer (HIL) for many optoelectronic devices because of its excellent hole mobility, high environmental stability, and low-cost fabrication. In this research, a NiOx thin film and nanoporous layers (NPLs) have been utilized as the HIL for the fabrication of quantum dot light-emitting diodes (QLEDs). The obtained NiOx NPLs have spongelike nanostructures that possess a larger surface area to enhance carrier injection and to lower the turn-on voltage as compared with the NiOx thin film. The energy levels of NiOx were slightly downshifted by incorporating the nanoporous structure. The amount of Ni2O3 species is higher than that of NiO in the NiOx NPL, confirming its good hole transport ability. The best QLED was achieved with a 30 nm thick NiOx NPL, exhibiting a maximum brightness of 68 646 cd m-2, a current efficiency of 7.60 cd A-1, and a low turn-on voltage of 3.4 V. More balanced carrier transport from the NiOx NPL and ZnO NPs/polyethylenimine ethoxylated (PEIE) is responsible for the improved device performance.

Enhancing the efficiency of solution-processed inverted quantum dot light-emitting diodes via ligand modification with 6-mercaptohexanol

In this Letter, the surface hydrophilicity of the quantum dot (QD) emitting layer (EML) was modified via a ligand exchange to prevent QD EML damage upon hole transport layer (HTL) deposition for all-solution-processed inverted QD-light-emitting diodes (QLEDs). The conventional hydrophobic oleic acid ligand (OA-QDs) was partially replaced with a hydrophilic 6-mercaptohexanol (OH-QDs) through a one-pot ligand exchange. Owing to this replacement, the contact angle of a water droplet on the OH-QD films was reduced to 71.7° from 89.5° on the OA-QD films, indicating the conversion to hydrophilic hydroxyl ligands. The OH-QD EML maintained its integrity without any noticeable damage, even after HTL deposition, enabling all-solution processing for inverted QLEDs with well-organized multilayers. Inverted QLEDs with the OH-QD EMLs were compared with those with OA-QD EMLs; the maximum current efficiency of the device with the OH-QD EML significantly improved to 39.0 cd A^-1 from 5.3 cd A^-1, and the peak external quantum efficiency improved to 9.3% from 1.2%, which is a seven-fold increase over the OA-QD device. This approach is believed to be effective for forming solid QD films with resistance to chlorobenzene, a representative HTL solvent, and consequently contributes to high-efficiency all-solution-processed inverted QLEDs.

High-efficiency quantum dot light-emitting diodes based on Li-doped TiO2 nanoparticles as an alternative electron transport layer

We report high-efficiency quantum dot light-emitting diodes (QLEDs) with Li-doped TiO₂ nanoparticles (NPs) as an alternative electron transport layer (ETL). Colloidally stable TiO₂ NPs are applied as ETLs of inverted structured QLEDs and the effect of the addition of lithium (Li) to TiO₂ NPs on device characteristics is studied in detail. Compared to pristine TiO₂ NPs, Li-doped ones are found to be beneficial for the charge balance in the emitting layer of QLEDs mainly by means of their upshifted conduction band minimum, which in turn limits electron injection. A green QLED with 5% Li-doped TiO₂ NPs produces a maximum luminance of 169 790 cd m^-2, an EQE of 10.27%, and a current efficiency of 40.97 cd A^-1, which indicate the best device performances to date among QLEDs with non-ZnO inorganic ETLs. These results indicate that Li-doped TiO₂ NPs show great promise for use as a solution-based inorganic ETL for future QLEDs.

Effect of Time-Dependent Characteristics of ZnO Nanoparticles Electron Transport Layer Improved by Intense-Pulsed Light Post-Treatment on Hole-Electron Injection Balance of Quantum-Dot Light-Emitting Diodes

We investigated the effect of intense-pulsed light (IPL) post-treatment on the time-dependent characteristics of ZnO nanoparticles (NPs) used as an electron transport layer (ETL) of quantum-dot light-emitting diodes (QLEDs). The time-dependent characteristics of the charge injection balance in QLEDs was observed by fabrication and analysis of single carrier devices (SCDs), and it was confirmed that the time-dependent characteristics of the ZnO NPs affect the device characteristics of QLEDs. Stabilization of the ZnO NPs film properties for improvement of the charge injection balance in QLEDs was achieved by controlling the current density characteristics via filling of the oxygen vacancies by IPL post-treatment.

Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap

InP is currently being used in various (opto)electronic and energy device applications. However, the high cost of InP substrates and associated epitaxial growth techniques has been huge impediments for its widespread use. Here, large-area monocrystalline InP thin films are demonstrated via a convenient cracking method, and the InP thin films show material properties identical to their bulk counterparts. Furthermore, the same substrate can be reused for the production of additional InP thin films. This cracking technique is also shown to be a versatile tool to form an ultrasmooth surface or a microscale periodic triangular grating structure on the surface, depending on the orientation of the donor substrate used. Strain-induced band gap energy shift is also observed in localized regions of the thin film with a grating structure. The simplicity of this technique, which does not require any sophisticated equipment and complex fabrication process, is promising to reduce the cost of InP thin-film devices.

Material and device engineering for high-performance blue quantum dot light-emitting diodes

Colloidal quantum dots (QDs) have attracted extensive attention due to their excellent optoelectronic properties, such as high quantum efficiency, narrow emission peaks, high color saturation, high stability and solution processability. Compared with the traditional display technology, QD based light-emitting diodes (QLEDs) show broad application prospects in the field of flat-panel displays and solid-state lighting. However, for full-color displays, the efficiency and lifetime of blue QLEDs are inferior to those of their green and red counterparts. Therefore, it is urgent for us to deeply understand the device physics and improve the performance of blue QLEDs through material and device engineering. An in-depth understanding of the optoelectronic properties (such as the structure of electronic states, electron-phonon interactions, Auger processes, etc.) and material engineering (such as size distribution control, composition control, and surface engineering) of blue emission QDs is greatly helpful for their applications in other fields. Herein, we review the key progress in the area of blue QLEDs, including the compositions and nanostructures of blue quantum dots, advances in the device architectures and the improvement of the device lifetime of blue QLEDs. The key factors that influence the blue device performance, including the nanostructure design and surface modification of QDs, interface engineering and architecture design of devices are discussed, aiming to propose possible solutions for these challenges, which will help to promote the commercialization process of QLEDs.

Al-, Ga-, Mg-, or Li-doped zinc oxide nanoparticles as electron transport layers for quantum dot light-emitting diodes

Colloidal quantum dots and other semiconductor nanocrystals are essential components of next-generation lighting and display devices. Due to their easily tunable and narrow emission band and near-unity fluorescence quantum yield, they allow cost-efficient fabrication of bright, pure-color and wide-gamut light emitting diodes (LEDs) and displays. A critical improvement in the quantum dot LED (QLED) technology was achieved when zinc oxide nanoparticles (NPs) were first introduced as an electron transport layer (ETL) material, which tremendously enhanced the device brightness and current efficiency due to the high mobility of electrons in ZnO and favorable alignment of its energy bands. During the next decade, the strategy of ZnO NP doping allowed the fabrication of QLEDs with a brightness of about 200 000 cd/m2 and current efficiency over 60 cd/A. On the other hand, the known ZnO doping approaches rely on a very fine tuning of the energy levels of the ZnO NP conduction band minimum; hence, selection of the appropriate dopant that would ensure the best device characteristics is often ambiguous. Here we address this problem via detailed comparison of QLEDs whose ETLs are formed by a set of ZnO NPs doped with Al, Ga, Mg, or Li. Although magnesium-doped ZnO NPs are the most common ETL material used in recently designed QLEDs, our experiments have shown that their aluminum-doped counterparts ensure better device performance in terms of brightness, current efficiency and turn-on voltage. These findings allow us to suggest ZnO NPs doped with Al as the best ETL material to be used in future QLEDs.

4 Mb/s under a 3 m transmission distance using a quantum dot light-emitting diode and NRZ-OOK modulation

We realize signal transmission with a miniature light source fabricated by a $4\; {\rm mm}^2 $4mm² red-emissive CdSe/ZnS quantum-dot light-emitting diode (QLED) in visible light communication (VLC). The light emitted from the 60°-designed QLED transmits in free space with a data rate of 4 Mb/s at a 3 m transmission distance by using a simple modulation scheme of non-return-to-zero on-off keying. The maximum data rate of 2.5 Mb/s with a bit error rate below the forward-error-correction (FEC) limit is achieved with the optical angles of ${\rm \pm 20}^\circ $±20^∘. The influences caused by the voltage, distance, and optical angle of emitting light are taken into consideration during communication. The performance of the QLED-based light source compares favorably with other solution-processed devices in efficiency, luminance, bandwidth, transmission speed, and distance. Additionally, to the best of our knowledge, this is the first report of an investigation on the application of QLED in VLC. Our results should be instructive for further investigation on QLED communication.

Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

In this research, we demonstrate a novel approach to improve the device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, for the first time, polyethylenimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transport layer were applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139 909 cd m^-2 and current efficiency of 27.2 cd A^-1 were obtained for the optimized device with the configuration of ITO/PEDOT:PSS + BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al that shows promising use in light-emitting applications.

Composition-tailored ZnMgO nanoparticles for electron transport layers of highly efficient and bright InP-based quantum dot light emitting diodes

Tailored-ZnMgO layers result in green-emitting InP based quantum dot light emitting diodes (QLEDs) with a maximum luminance of 13 900 cd m-2 and an external quantum efficiency (EQE) of 13.6%. This is the first report of green-emitting InP based QLEDs that exceed an EQE of 10% and a luminance of 13 000 cd m-2.

"Positive Incentive" Approach To Enhance the Operational Stability of Quantum Dot-Based Light-Emitting Diodes

Balanced charge injection promises high efficiency of quantum dot-based light-emitting diodes (QD-LEDs). The most widely used approach to realize charge injection balance impedes the injection rate of the dominant charge carrier with energetic barriers. However, these approaches often accompany unwanted outcomes (e.g., the increase in operation voltage) that sacrifice the operational stability of devices. Herein, a "positive incentive" approach is proposed to enhance the efficiency and the operational stability of QD-LEDs. Specifically, the supply of hole, an inferior carrier than its counterpart, is facilitated by adopting a thin fullerene (C₆₀) interlayer at the interface between the hole injection layer (MoO_X) and hole transport layer (4,4'-bis(9-carbazolyl)-1,1'-biphenyl). The C₆₀ interlayer boosts the hole current by eliminating the universal energy barrier, lowers the operation voltage of QD-LEDs, and enhances the charge balance in the QD emissive layer within the working device. Consequently, QD-LEDs benefitting from the adoption of the C₆₀ interlayer exhibit significantly enhanced device efficiency and operation stability. Grounded on the quantitative assessment of the charge injection imbalance within the QD emissive layer, the impact of electrical parameters of QD-LEDs on their optoelectronic performance and operational stability is also discussed.

Exploring Electronic and Excitonic Processes toward Efficient Deep-Red CuInS2/ZnS Quantum-Dot Light-Emitting Diodes

The electroluminescence mechanisms in the Cd-free CuInS₂/ZnS quantum dot-based light-emitting diodes (QLEDs) are systematically investigated through transient electroluminescence measurements. The results demonstrate that the characteristics of hole transporting layers (HTLs) determine the QLEDs to be activated by the direct charge injection or the energy transfer. Moreover, both the energy level alignment between the HTL and quantum dot and the carrier mobility properties of the HTLs are critical factors to affect the device performance. By choosing the suitable HTL, such as 4,4'-bis(9-carbazolyl)-2,2'-biphenyl, highly efficient deep-red (emission peak at ∼650 nm) CuInS₂/ZnS QLEDs based on the single HTL can be obtained with a peak current efficiency and luminance of ∼2.0 cd/A and nearby 3000 cd/m², respectively.

High-Performance Quantum-Dot Light-Emitting Transistors Based on Vertical Organic Thin-Film Transistors

In this work, a novel vertical quantum-dot light-emitting transistor (VQLET) based on a vertical organic thin-film transistor is successfully fabricated. Benefiting from the new vertical architecture, the VQLET is able to afford an extremely high current density, which allows most of the organic thin film transistors (OTFT) even with low mobility (for instance, poly(3-hexylthiophene)) to drive a quantum-dot light-emitting diode (QLED), which was previously unavailable. Moreover, the hole injection barrier could be modulated by the additional gate electrode, which precisely optimizes the charge balance in the device, a critical issue in QLED, resulting in the precise control of current density and brightness of the VQLET. The VQLET shows a high performance with a maximum current efficiency of 37 cd/A. Furthermore, integrating OTFT and QLED into a single device, the VQLET features drastic advantages by realizing active matrix quantum-dot light-emitting diodes (AMQLEDs), which significantly reduces the number of transistors and frees the large area fraction occupied by transistors. Hence, these results indicate that the VQLET provides a new strategy for realizing a low-cost, solution-processed, high-performance OTFT-AMQLED for the flat panel display technology. Moreover, the novel design offers a unique method to exquisitely control the charge balance and maximize the efficiency the QLED.

Stability of Quantum Dots, Quantum Dot Films, and Quantum Dot Light-Emitting Diodes for Display Applications

Quantum dots (QDs) are being highlighted in display applications for their excellent optical properties, including tunable bandgaps, narrow emission bandwidth, and high efficiency. However, issues with their stability must be overcome to achieve the next level of development. QDs are utilized in display applications for their photoluminescence (PL) and electroluminescence. The PL characteristics of QDs are applied to display or lighting applications in the form of color-conversion QD films, and the electroluminescence of QDs is utilized in quantum dot light-emitting diodes (QLEDs). Studies on the stability of QDs and QD devices in display applications are reviewed herein. QDs can be degraded by oxygen, water, thermal heating, and UV exposure. Various approaches have been developed to protect QDs from degradation by controlling the composition of their shells and ligands. Phosphorescent QDs have been protected by bulky ligands, physical incorporation in polymer matrices, and covalent bonding with polymer matrices. The stability of electroluminescent QLEDs can be enhanced by using inorganic charge transport layers and by improving charge balance. As understanding of the degradation mechanisms of QDs increases and more stable QDs and display devices are developed, QDs are expected to play critical roles in advanced display applications.

Blue quantum dot light-emitting diodes with high luminance by improving the charge transfer balance

The development of blue quantum dot light-emitting diodes (QLEDs) lags far behind that of the red and green ones, which hinders the practical commercialization of QLEDs. Balancing the charge transfer still remains a challenging task, because blue QD emitters have a deeper valence band (VB) that creates a great injection barrier impeding the hole transfer. Herein, we demonstrate that the charge transfer balance can be improved by using a tert-butyldimethylsilyl chloride-modified poly(p-phenylene benzobisoxazole) (TBS-PBO) blocking layer. The TBS-PBO acts well in blocking excess electron injection and preserving the emission efficiency of the QD emitter. Compared to the insulating blocking layers, TBS-PBO has good conductivity, thus keeping the current density at a high level. Our device delivers a notable luminance of 4635 cd m-2 at an external quantum efficiency (EQE) maximum of 17.4%. To the best of our knowledge, the luminance with EQE > 17% is the highest one to be reported for blue QLEDs.

Beyond OLED: Efficient Quantum Dot Light-Emitting Diodes for Display and Lighting Application

The unique features of solution-processed quantum dots (QDs) including emission tunability in the visible range, high-quality saturated color and outstanding intrinsic stability in environment are highly desired in various application fields. Especially, for the preparation of wide color gamut displays, QDs with high photoluminescence quantum yield are deemed as the optimal fluorescent emitter that has been utilized in the backlight for liquid crystal display. Nevertheless, the commercialization of electrically driven self-emissive quantum dot light-emitting diode (QLED) display is the ultimate target due to its merits of high contrast, slim configuration and compatibility with flexible substrate. Through the great efforts devoted to material engineering and device configuration, astonishing progresses have been made in device performance, giving the QLED technology a great chance to compete with other counterparts for next-generation displays. In this review, we retrospect the development roadmap of QLED technology and introduce the essential principles in the QLED devices. Moreover, we discuss the key factors that affect the QLED efficiency and lifetime. Finally, the advances in device architectures and pixel patterning are also summarized.