Enhancing Photovoltaic Performance of Inverted Planar Perovskite Solar Cells by Cobalt-Doped Nickel Oxide Hole Transport Layer

Exploration and Optimization of the Polymer-Modified NiOx Hole Transport Layer for Fabricating Inverted Perovskite Solar Cells

The recombination of charge carriers at the interface between carrier transport layers such as nickel oxide (NiOx) and the perovskite absorber has long been a challenge in perovskite solar cells (PSCs). To address this issue, we introduced a polymer additive poly(vinyl butyral) into NiOx and subjected it to high-temperature annealing to form a void-containing structure. The formation of voids is confirmed to increase light transmittance and surface area of NiOx, which is beneficial for light absorption and carrier separation within PSCs. Experimental results demonstrate that the incorporation of the polymer additive helped to enhance the hole conductivity and carrier extraction of NiOx with a higher Ni3+/Ni2+ ratio. This also optimized the energy levels of NiOx to match with the perovskite to raise the open-circuit voltage to 1.01 V. By incorporating an additional NiOx layer beneath the polymer-modified NiOx, the device efficiency was further increased as verified from the dark current measurement of devices.

Highly efficient emerging Ag2BaTiSe4 solar cells using a new class of alkaline earth metal-based chalcogenide buffers alternative to CdS

Cu2ZnSn(S,Se)4 is a non-toxic, earth-abundant photovoltaic absorber. However, its efficiency is limited by a large open circuit voltage (VOC) deficit occurring due to its antisite defects and improper band alignment with toxic CdS buffer. Therefore, finding an absorber and non-toxic buffers that reduce VOC deficit is crucial. Herein, for the first time, Ag2BaTiSe4 is proposed as an alternative absorber using SCAPS-1D wherein a new class of alkaline earth metal chalcogenide such as MgS, CaS, SrS, and BaS is applied as buffers, and their characteristics are compared with CdS to identify their potential and suitability. The buffer and absorber properties are elucidated by tuning their thickness, carrier concentration, and defect density. Interestingly, optimization of the buffer's carrier concentration suppressed the barrier height and accumulation of charge carriers at the absorber/buffer interface, leading to efficiencies of 18.81%, 17.17%, 20.6%, 20.85%, 20.08% in MgS, CaS, SrS, BaS, and CdS-based solar cells respectively. Upon optimizing Ag2BaTiSe4, MoSe2, and interface defects maximum efficiency of > 28% is achieved with less VOC loss (~ 0.3 V) in all solar cells at absorber's thickness, carrier concentration, and defect density of 1 µm, 1018 cm-3, 1015 cm-3 respectively, underscoring the promising nature of Ag2BaTiSe4 absorber and new alkaline earth metal chalcogenide buffers in photovoltaics.

Nanocrystalline Flash Annealed Nickel Oxide for Large Area Perovskite Solar Cells

The industrialization of perovskite solar cells requires adequate materials and processes to make them economically viable and environmentally sustainable. Despite promising results in terms of power conversion efficiency and operational stability, several hole-transport layers currently in use still need to prove their industrial feasibility. This work demonstrates the use of nanocrystalline nickel oxide produced through flash infrared annealing (FIRA), considerably reducing the materials cost, production time, energy, and the amount of solvents required for the hole transport layer. X-ray photoelectron spectroscopy reveals a better conversion to nickel oxide and a higher oxygen-to-nickel ratio for the FIRA films as compared to control annealing methods, resulting in higher device efficiency and operational stability. Planar inverted solar cells produced with triple cation perovskite absorber result in 16.7% power conversion efficiency for 1 cm2 devices, and 15.9% averaged over an area of 17 cm2 .

Halide anions engineered ionic liquids passivation layer for highly stable inverted perovskite solar cells

Long-term stability remains a great challenge for metal halide perovskite solar cells (PSCs). The utilization of ionic liquids (ILs) is a promising strategy to solve the stability problem. However, few studies have focused on controlling the halide anions of ILs, in which different organic cations can modulate the melting point of ILs and film crystal growth. Here, ILs with a 1-ethyl-3-methylimidazolium (EMIM⁺) cation and different halide anions (X = Cl, Br, and I) are employed in inverted PSCs. The results show that EMIMX can form a 1D passivation layer by the in situ growth technique and influence the surface morphology of the perovskite film. These EMIMX-treated layers simultaneously suppress the surface defects and nonradiative energy losses and improve the hydrophobic properties. As a result, a power conversion efficiency (PCE) of 20.0% is obtained for the EMIMBr-modified PSCs compared to 18.06% for the control device. Moreover, the unencapsulated devices maintain more than 90% of their initial PCE over 3000 h under ambient air, which is among the best long-term stabilities reported for NiO_x-based inverted PSCs. It also retains 74.2% and 49.5% of the initial PCE value after aging under harsher conditions, such as an 85 ± 5% relative humidity (RH) environment and at 85 °C for 48 h, respectively.

Enhanced p-Type Conductivity of NiOx Films with Divalent Cd Ion Doping for Efficient Inverted Perovskite Solar Cells

The effect of substitutional metal dopants in NiO_x on the structural and electronic structures is of great interest, particularly for increasing the p-type conductivities as a hole transport layer (HTL) applied in perovskite solar cells (PSCs). In this paper, experimental fabrications and density functional theory calculations have been carried out on Cd-doped NiO_x films to examine the effect of divalent doping on the electronic and geometric structures of NiO_x. The results indicate that divalent Cd dopants reduced the formation energy of the Ni vacancy (V_Ni) and created more V_Ni in the films, which enhanced the p-type conductivity of the NiO_x films. In addition, Cd doping also deepened the valence band edge, reduced the monomolecular Shockley-Read-Hall (SRH) recombination losses, and promoted hole extraction and transport. Hence, the PSCs with Cd:NiO_x HTLs manifest a high efficiency of 20.47%, a high photocurrent density of 23.00 mA cm^-2, and a high fill factor of 79.62%, as well as negligible hysteresis and excellent stability. This work illustrates that divalent elements such as Cd, Zn, Co, etc. may be potential dopants to improve the p-type conductivity of the NiO_x films for applications in highly efficient and stabilized PSCs.

Facile Synthesis of Highly Conductive Vanadium-Doped NiO Film for Transparent Conductive Oxide

Metal-oxide-based electrodes play a crucial role in various transparent conductive oxide (TCO) applications. Among the p-type materials, nickel oxide is a promising electrically conductive material due to its good stability, large bandgap, and deep valence band. Here, we display pristine and 3 at.%V-doped NiO synthesized by the solvothermal decomposition method. The properties of both the pristine and 3 at.%V:NiO nanoparticles were characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffractometry (XRD), Raman spectroscopy, ultraviolet–visible spectroscopy (UV–vis), and X-ray photoelectron spectroscopy (XPS). The film properties were characterized by atomic force microscopy (AFM) and a source meter. Our results suggest that incorporation of vanadium into the NiO lattice significantly improves both electrical conductivity and hole extraction. Also, 3 at.%V:NiO exhibits a lower crystalline size when compared to pristine nickel oxide, which maintains the reduction of surface roughness. These results indicate that vanadium is an excellent dopant for NiO.

Boosting the Conversion Efficiency Over 20% in MAPbI3 Perovskite Planar Solar Cells by Employing a Solution-Processed Aluminum-Doped Nickel Oxide Hole Collector

Recently, nickel oxide (NiO_x) thin films have been used as an efficient and robust hole transport layer (HTL) in inverted planar perovskite solar cells (IP-PSCs) to replace costly and unstable organic transport materials. However, the power conversion efficiency (PCE) of most IP-PSCs using NiO_x HTLs is rather limited below 20% due to insufficient electronic conductivity of the NiO_x. In this work, solution-processed Al-doped NiO_x (ANO) films are suggested as HTLs for low-cost and stable IP-PSCs. The electrical conductivity of the NiO_x film is significantly enhanced by Al doping, which effectively reduces the nonradiative recombination losses at the HTL-perovskite interfaces and boosts hole extraction/transportation. The device with undoped NiO_x shows the best PCE of 16.56%, whereas ANO HTL (5% doping) contributes to achieving a PCE of 20.84%, which outperforms other CH₃NH₃PbI₃ IP-PSCs with NiO_x-based HTLs reported to date. Moreover, a reliability test (1728 h storage) shows that the performance stability is enhanced by approximately 11% by employing ANO HTLs. This investigation into ANO HTLs provides a new guideline for the further development of highly efficient and reliable IP-PSCs using low-cost and robust metal oxide HTLs.

Structural and Electrical Investigation of Cobalt-Doped NiOx/Perovskite Interface for Efficient Inverted Solar Cells

Inorganic hole-transporting materials (HTMs) for stable and cheap inverted perovskite-based solar cells are highly desired. In this context, NiO_x, with low synthesis temperature, has been employed. However, the low conductivity and the large number of defects limit the boost of the efficiency. An approach to improve the conductivity is metal doping. In this work, we have synthesized cobalt-doped NiO_x nanoparticles containing 0.75, 1, 1.25, 2.5, and 5 mol% cobalt (Co) ions to be used for the inverted planar perovskite solar cells. The best efficiency of the devices utilizing the low temperature-deposited Co-doped NiO_x HTM obtained a champion photoconversion efficiency of 16.42%, with 0.75 mol% of doping. Interestingly, we demonstrated that the improvement is not from an increase of the conductivity of the NiO_x film, but due to the improvement of the perovskite layer morphology. We observe that the Co-doping raises the interfacial recombination of the device but more importantly improves the perovskite morphology, enlarging grain size and reducing the density of bulk defects and the bulk recombination. In the case of 0.75 mol% of doping, the beneficial effects do not just compensate for the deleterious one but increase performance further. Therefore, 0.75 mol% Co doping results in a significant improvement in the performance of NiO_x-based inverted planar perovskite solar cells, and represents a good compromise to synthesize, and deposit, the inorganic material at low temperature, without losing the performance, due to the strong impact on the structural properties of the perovskite. This work highlights the importance of the interface from two different points of view, electrical and structural, recognizing the role of a low doping Co concentration, as a key to improve the inverted perovskite-based solar cells’ performance.

Self-doping synthesis of trivalent Ni2O3 as a hole transport layer for high fill factor and efficient inverted perovskite solar cells

We present a novel self-doping method to obtain trivalent nickel oxide (Ni₂O₃) as an HTL, and its excellent optical transmittance and hole extraction efficiencies lead to a PCE of 17.89% and high FF of 82.66%.

Lithium and Silver Co-Doped Nickel Oxide Hole-Transporting Layer Boosting the Efficiency and Stability of Inverted Planar Perovskite Solar Cells

In this work, a lithium and silver co-doping strategy has been successfully implied to prepare NiO _x films for high performance inverted planar perovskite solar cells (PSCs). Compared to the pristine and single-doped NiO _x, the Li and Ag co-doping approach exhibits the synergistic effect and can endow NiO _x films with higher electrical conductivity, higher hole mobility and better interface energy band alignment with perovskite active layers. Moreover, the perovskite film with enhanced crystallinity can be obtained induced by the Li,Ag:NiO _x film. The PSC with Li,Ag:NiO _x HTL shows a high power conversion efficiency (PCE) up to 19.24% and less hysteresis effect, which outperforms the devices with the pristine NiO _x or single-doped NiO _x HTLs. Meanwhile, the Li,Ag:NiO _x device can retain 95% of its initial PCE after storage at the relative humidity of 30 ± 2% in 30 days without encapsulation. Our work demonstrates that lithium and silver co-doping is a promising route for realizing efficient p-type NiO _x HTL, which provides a simple way to boost the efficient and stable of inverted planar PSCs.