Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device

Modified Donor End Caps for Binary-to-Ternary WORM Memory Conversion in N-Heteroaromatic Systems

A series of novel D-π-A type organic small molecules have been designed, synthesized, and demonstrated for non-volatile resistive switching WORM memory application. The electron-deficient phenazine and quinoxaline units were coupled with various functionalized triphenylamine end caps to explore the structure-property correlations. The photophysical investigations displayed considerable intramolecular charge transfer, and the electrochemical analysis revealed an optimum band gap of 2.44 to 2.83 eV. These factors and the thin film morphological studies suggest the feasibility of the compounds as better resistive memory devices. All the compounds indicated potent non-volatile resistive switching memory capabilities with ON/OFF ratios ranging from 103 to 104, and the lowest threshold voltage recorded stands at -0.74 V. A longer retention time of 103 s marks the substantial stability of the devices. The phenazine-based compounds outperformed the others in terms of memory performance. Exceptionally, the compound with -CHO substituted triphenylamine exhibited ternary memory performance owing to its multiple traps. The resistive switching mechanism for the devices was validated using density functional theory calculations, which revealed that the integrated effect of charge transfer and charge trapping contributes significantly to the resistive switching phenomena.

Nonvolatile Ternary Memristor Based on Fluorene-Benzimidazole Copolymer/Au NP Composites

A donor-acceptor type polymer of poly [2,7-(9,9-dioctyl)-fluorene-alt-7H-benzimidazo-[2,1-a]benzo[de]isoquinolin-7-one] (PF-BBO) based on benzimidazole groups was synthesized. This material was incorporated into data storage devices that exhibited good data storage characteristics. In order to improve the storage properties of the device, Au NPs were compounded in this material. We observed an increase in the ratio of switching current for the device with the PF-BBO/Au NP composite as the active layer. The device comprising 8 wt% Au NPs demonstrated optimal storage performance with a switching current ratio of 1:3.4 × 10²:1.0 × 10⁵ and a threshold voltage of -0.40 V/-0.85 V, respectively. The number of cycle times of this device was over 3000, which indicates excellent stability. Thus, the devices containing PF-BBO/Au NP composite as active materials offer a new dimension for future application prospects of high-density data storage.

Molecular-Shape-Controlled Binary to Ternary Resistive Random-Access Memory Switching of N-Containing Heteroaromatic Semiconductors

In organic resistive random-access memory (ReRAM) devices, deeply understanding how to control the performance of π-conjugated semiconductors through molecular-shape-engineering is important and highly desirable. Herein, we design a family of N-containing heteroaromatic semiconductors with molecular shapes moving from mono-branched 1Q to di-branched 2Q and tri-branched 3Q. We find that this molecular-shape engineering can induce reliable binary to ternary ReRAM switching, affording a highly enhanced device yield that satisfies the practical requirement. The density functional theory calculation and experimental evidence suggest that the increased multiple paired electroactive nitrogen sites from mono-branched 1Q to tri-branched 3Q are responsible for the multilevel resistance switching, offering stable bidentate coordination with the active metal atoms. This study sheds light on the prospect of N-containing heteroaromatic semiconductors for promising ultrahigh-density data-storage ReRAM application.

Ternary Electrical Memory Devices Based on Polycarbazole: SnO2 Nanoparticles Composite Material

In this paper, a D–A polymer (PIB) containing carbazole as the donor group in the main chain and benzimidazole benzisoindolinone as the acceptor group was synthesized by Suzuki reaction. The Suzuki reaction, also known as the Suzuki coupling reaction, is a relatively new organic coupling reaction in which aryl or alkenyl boronic acids or boronic acid esters react with chlorine, bromine, iodoaromatic hydrocarbons or alkenes under the catalysis of zerovalent palladium complexes cross-coupling. A series of devices were fabricated by a spin-coating approach, and the devices all exhibited ternary resistance switching storage behavior. Among them, the composite device with the mass fraction of SnO₂ NPs of 5 wt% has the best storage performance, with a threshold voltage of −0.4 V and a switching current ratio of 1:10^1.5:10^4.5. At the same time, the current of the device remained stable after a 3-h test. Furthermore, after 10³ cycles, the current has no obvious attenuation. The device has good stability and continuity. Moreover, the conduction mechanism is further revealed. Inorganic nanoparticle composite devices have splendid memory performances and exhibit underlying application significance in storing data.

Recent Advances in Heterocyclic Nanographenes and Other Polycyclic Heteroaromatic Compounds

This review surveys recent progress in the chemistry of polycyclic heteroaromatic molecules with a focus on structural diversity and synthetic methodology. The article covers literature published during the period of 2016-2020, providing an update to our first review of this topic (Chem. Rev. 2017, 117 (4), 3479-3716).

Non-volatile ternary memristors based on a polymer containing a carbazole donor with CuO NPs embedded

A D–A-type polymer PCz–BMBI was synthesized and non-volatile ternary memory devices of ITO/PCz–BMBI:CuO/Al were fabricated with an ON2/ON1/OFF ratio of 105.3 : 102.3 : 1.

Natural vs. Synthetic Phosphate as Efficient Heterogeneous Compounds for Synthesis of Quinoxalines

Natural phosphate (NP) and synthetic fluorapatite phosphate (SFAP) were proposed as stable, inexpensive, readily available and recyclable catalysts for the condensation of 1,2-diamines with 1,2-dicarbonyls in methanol to afford quinoxaline at room temperature. NP provided as high as 92-99% yield for quinoxalines in short reaction times (i.e., 1-45 min), while SFAP created quinoxalines with 87-97% yield in 60-120 min. From the chemical analyses, X-ray fluoresecency, X-ray diffraction, energy dispersive X-ray and Fourier-transform infrared spectroscopy methods, two main phases (CaO, P2O5) appeared in NP together with other low content phases (SiO2, Fe2O3). Compared to other phases, apatite (CaO and P2O5 as Ca10(PO4)6) played a major role in the catalytic activity of NP. SFAP with similar Ca/P atomic ratio showed a relatively lower catalytic activity than NP for the condensation of 1,2-diamine with 1,2-dicarbonyl in methanol at ambient temperature. To investigate the recyclability of catalysts, the surface properties of NP and 6-recycled NP were investigated using scanning electron microscopy, energy dispersive X-ray and Brunauer-Emmett-Teller and Barrett-Joyner-Halenda methods. Some differences were observed in NP and 6-recycled NP's particle size, surface area, the volume and size of pores, and the content of elements; nevertheless, the use-reuse process did not noticeably change the catalytic property of NP.

Layer-by-Layer Assembly of Monolayer Films Precisely Controlled by LB Technology to Realize Low-Energy Consumption and High-Stability Ternary Data-Storage Devices

Organic semiconductor devices with low energy consumption and excellent stability are highly desirable. Controlling the intermolecular alignment orientation by designing the molecular structure or optimization of the film preparation process is an alternative way to achieve this goal. In this paper, a new idea was proposed to realize the formation of an aligned monomolecular layer and multimolecular layer thin films on the electrode substrate by controlling the surface pressure of molecular layer on the liquid surface by LB technology. An amphiphilic π-conjugated D-A molecule was synthesized, and the influence of spin coating and LB technology on intermolecular ordered stacking in the film and the electrical memory performance were investigated. The results demonstrated that the film fabricated by LB technology has some advantages compared with that fabricated by spin-coating method, such as higher crystallinity, lower surface roughness and better-organized monomolecular and multimolecular layer, which significantly promoted the performance of the electrical memory device with lower power consumption and longer stability.

Tailoring an HSO4- anion hybrid receptor based on a phenazine derivative

A catechol-functionalized phenazine imidazole (PD) was tailored with 2,3-diaminophenazine and 3,4-dihydroxy benzaldehyde, and it served as a hybrid acceptor for capturing HSO₄^- anions. The selectivity and sensitivity of the PD receptor for anion sensing were studied. It was found that the PD receptor could not only display a preferable sensitivity to HSO₄^- ions with a "turn-off" fluorescence response, but also have a strong anti-interference ability toward other common anions, especially basic anions such as CH₃COO^-, HPO₄^2-, and H₂PO₄^-. The anion recognition mechanism of PD towards HSO₄^- is based on multiple hydrogen bond interactions. Finally, the strips for anion detection were prepared, which were verified to be a convenient and high-efficiency test kit for detecting HSO₄^- ions with the naked eye.

Rational Modification of Small Molecules with High Device Reproducibility Induced by Improved Interfacial Contact through Intermolecular Hydrogen Bonds

The interfacial contact between the semiconductor and the electrode can effectively affect the device performance through the penetration of metal atoms in semiconductors from the grain boundaries. Thus, how to design a novel molecule with few grain boundaries, namely, large grain size, in solid state is an important task to achieve excellent memory device with high reproducibility. Intermolecular hydrogen-bonding interaction has been proved to be a powerful driving force for molecules assembling into large crystalline aggregates. In this work, the molecular terminals with different numbers of electron-deficient imine (C═N) nitrogen atoms are designed to investigate the effect of hydrogen-bonding interaction on molecular crystalline grains and interfacial contact. X-ray diffraction and grazing-incidence small-angle X-ray scattering measurements verified the superior molecular aggregates and grain boundaries of the molecule with two hydrogen-bonding sites in solid state, donating the corresponding devices showing optimized ternary data-storage performance with lower threshold voltages and higher device reproducibility.

Bis[1]benzothieno[1,4]thiazines: Planarity, Enhanced Redox Activity and Luminescence by Thieno-Expansion of Phenothiazine

Twofold Buchwald-Hartwig aminations selectively furnish three regioisomers of bis[1]benzothieno[1,4]thiazines; X-ray structure analyses and DFT calculations were corroborated for correlation of their electronic properties. All regioisomers outscore the parent compound phenothiazine with respect to a low-lying oxidation potential and reversible redox activity. The anti-anti bis[1]benzothieno[3,2-b:2',3'-e][1,4]thiazines possess the lowest oxidation potentials in this series and displayed pronounced green luminescence in solution (Φ_F ≈20 %) and in the solid state. Syn-anti regioisomers were only weakly luminescent in solution, but showed aggregation-induced emission enhancement and solid-state luminescence. Most interestingly, X-ray structure analyses revealed that anti-anti derivatives have an amazingly coplanar structure of the pentacyclic anellated 1,4-thiazine system, emphasizing a structural similarity to heteroacenes. The calculated theoretical nucleus-independent chemical shifts additionally suggested that these 8π-electron core systems can be considered as the first electronically unbiased anellated 1,4-thiazines with antiaromatic character.

Infrared-Sensitive Memory Based on Direct-Grown MoS2 -Upconversion-Nanoparticle Heterostructure

Photonic memories as an emerging optoelectronic technology have attracted tremendous attention in the past few years due to their great potential to overcome the von Neumann bottleneck and to improve the performance of serial computers. Nowadays, the decryption technology for visible light is mature in photonic memories. Nevertheless, near-infrared (NIR) photonic memristors are less progressed. Herein, an NIR photonic memristor based on MoS₂ -NaYF₄ :Yb³⁺ , Er³⁺ upconversion nanoparticles (UCNPs) nanocomposites is designed. Under excitation by 980 nm NIR light, the UCNPs show emissions well overlapping with the absorption band of the MoS₂ nanosheets. The heterostructure between the MoS₂ and the UCNPs acting as excitons generation/separation centers remarkably improves the NIR-light-controlled memristor performance. Furthermore, in situ conductive atomic force microscopy is employed to elucidate the photo-modulated memristor mechanism. This work provides novel opportunities for NIR photonic memory that holds promise in future multifunctional robotics and electronic eyes.