High-Performance Photovoltaic Readable Ferroelectric Nonvolatile Memory Based on La-Doped BiFeO3 Films

Silicon based Bi0.9La0.1FeO3 ferroelectric tunnel junction memristor for convolutional neural network application

Computing in memory (CIM) based on memristors is expected to completely solve the dilemma caused by von Neumann architecture. However, the performance of memristors based on traditional conductive filament mechanism is unstable. In this study, we report a nonvolatile high-performance memristor based on ferroelectric tunnel junction (FTJ) Pd/Bi0.9La0.1FeO3 (6.9 nm) (BLFO)/La0.67Sr0.33MnO3 (LSMO) on a silicon substrate. The conductance of this device was adjusted by different pulse stimulation parameter to achieve various synaptic functions because of ferroelectric polarization reversal. Based on the multiple conductance characteristics of the devices and the high linearity and symmetry of weight updating, image processing and VGG8 convolutional neural network (CNN) simulation based on the devices were realized. Excellent results of the image processing are demonstrated. The recognition accuracy of CNN offline learning reached an astonishing 92.07% based on Cifar-10 dataset. This provides a more feasible solution to break through the bottleneck of von Neumann architecture.

Mechanism and efficiency of photocatalytic triclosan degradation by TiO2/BiFeO3 nanomaterials

Hierarchical porous TiO₂ photocatalytic nanomaterials were fabricated by impregnation and calcination using a peanut shell biotemplate, and TiO₂/BiFeO₃ composite nanomaterials with different doping amounts were fabricated using hydrothermal synthesis. The micromorphology, structure, element composition and valence state of the photocatalyst were analyzed using a series of characterization methods, including X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), BET surface area (BET), X-ray photoelectron spectroscopy (XPS), UV-visible diffuse reflectance (UV-vis), fluorescence spectroscopy (PL) and other technological means. Finally, the degradation mechanism and efficiency of BiFeO₃ composite photocatalyst on the target pollutant triclosan were analyzed using a xenon lamp to simulate sunlight. The results showed that TiO₂/BiFeO₃ catalyst fabricated using a peanut shell biotemplate has a specific surface area of 153.64 m²/g, a band gap of 1.92 eV, and forms heterostructures. The optimum doping amount of TiO₂/BiFeO₃ catalyst was 1 mol/mol, and the degradation rate was 81.2%. The main active substances degraded were ·O₂^-and ·OH. The degradation process measured is consistent with the pseudo-first-order kinetic model.

Dynamically controllable terahertz metamaterial based on annealed and unannealed BiFeO3 thin film on Si

We theoretically and experimentally study a terahertz metamaterial based on a hybrid metamaterial/BFO/Si structure, where the BFO thin films are annealed and unannealed, respectively. Due to the interaction or hybridization of two resonators, an obvious plasma-induced transparency effect can be obtained in the transmission spectra. With increasing the external optical pumping power, the transparency peak modulation depth of the annealed hybrid sample is about 45% while the unannealed hybrid sample is almost zero. The annealing treatment has a significant effect on the modulation through investigating the photoconductivity of the BFO thin films. The photogenerated carriers suppress the resonances of the two bright modes, thus the transparency peak of the metamaterial is disappeared. This work is a further step forward in practical applications of BFO-based terahertz functional devices and a path for exploration of multiferroic material BiFeO₃ in the terahertz range.

Ferroelectric resistance switching in Pt/Fe/BiFeO3/SrRuO3/SrTiO3 heterostructures

BiFeO3 (BFO)-based heterostructures have been widely studied to develop high-speed, high-density and low-consumption nonvolatile memory. In this study, the resistive switching (RS) behavior in metal/BFO/SrRuO3 (SRO) heterostructures was investigated. The I-V curves of Pt/Fe/BFO/SRO and Pt/BFO/SRO heterostructures demonstrate that the RS behavior in the Pt/Fe/BFO/SRO heterostructures results from the fact that ferroelectric polarization modulated the depletion layer width around the BFO/SRO interface. According to the fitting results of the I-V curves, the conductivity mechanisms are the interface-limited Fowler-Nordheim tunneling mechanism in the negative bias and the space-charge-limited conduction mechanism in the positive bias. Compared with the memory performance in the Pt/BFO/SRO heterostructures, the memory performance in the Pt/Fe/BFO/SRO heterostructures evidently improved. The Fe layer with a work function similar to that of the BFO layer can decrease the barrier height and reduce the accumulation of the injected charges at the top-electrode/BFO interface, which further improves the ferroelectric performance of the BFO layer.

Progress in BiFeO3-based heterostructures: materials, properties and applications

BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.

High-performance ferroelectric non-volatile memory based on La-doped BiFeO3 thin films

An ultrathin (6.2 nm) ferroelectric La_0.1Bi_0.9FeO₃ (LBFO) film was epitaxially grown on a 0.7 wt% Nb-doped SrTiO₃ (001) single-crystal substrate by carrying out pulsed laser deposition to form a Pt/La_0.1Bi_0.9FeO₃/Nb-doped SrTiO₃ heterostructure. The LBFO film exhibited strong ferroelectricity and a low coercive field. By optimizing the thickness of the LBFO film, a resistance OFF/ON ratio of the Pt/LBFO (∼6.2 nm)/NSTO heterostructure of as large as 2.8 × 10⁵ was achieved. The heterostructure displayed multi-level storage and excellent retention characteristics, and showed stable bipolar resistance switching behavior, which can be well applied to ferroelectric memristors. The resistance switching behavior was shown to be due to the modulating effect of the ferroelectric polarization reversal on the width of the depletion region and the height of the potential barrier of the LaBiFeO₃/Nb-doped SrTiO₃ interface.

An ultrathin (6.2 nm) ferroelectric La_0.1Bi_0.9FeO₃ (LBFO) film was epitaxially grown on a 0.7 wt% Nb-doped SrTiO₃ (001) single-crystal substrate by carrying out pulsed laser deposition to form a Pt/La_0.1Bi_0.9FeO₃/Nb-doped SrTiO₃ heterostructure.

Resistive Switching Behavior in Ferroelectric Heterostructures

Resistive random-access memory (RRAM) is a promising candidate for next-generation nonvolatile random-access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization-dominated and defect-dominated mechanisms. Under certain conditions, these two mechanisms can have synergistic effects on RS behavior. Therefore, RS performance can be effectively improved by optimizing ferroelectricity, conductivity, and interfacial structures. Many methods have been studied to improve the RS performance of ferroelectric heterostructures. Typical approaches include doping elements into the ferroelectric layer, controlling the oxygen vacancy concentration and optimizing the thickness of the ferroelectric layer, and constructing an insertion layer at the interface. Here, the mechanism of RS behavior in ferroelectric heterostructures is briefly introduced, and the methods used to improve RS performance in recent years are summarized. Finally, existing problems in this field are identified, and future development trends are highlighted.