Interface State-Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory

Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology

Organic material-based bioelectronic nonvolatile memory devices have recently received a lot of attention due to their environmental compatibility, simple fabrication recipe, preferred scalability, low cost, low power consumption, and numerous additional advantages. Resistive random-access memory (RRAM) devices work on the principle of resistive switching, which has the potential for applications in memory storage and neuromorphic computing. Here, natural organically grown orange peel was used to extract biocompatible pectin to design a resistive switching-based memory device of the structure Ag/Pectin/Indium tin oxide (ITO), and the behavior was studied between a temperature range of 10K and 300K. The microscopic characterization revealed the texture of the surface and thickness of the layers. The memristive current-voltage characteristics performed over 1000 consecutive cycles of repeated switching revealed sustainable bipolar resistive switching behavior with a high ON/OFF ratio. The underlying principle of Resistive Switching behavior is based on the formation of conductive filaments between the electrodes, which is explained in this work. Further, we have also designed a 2 × 2 crossbar array of RRAM devices to demonstrate various logic circuit operations useful for neuromorphic computing. The robust switching characteristics suggest possible uses of such devices for the design of ecofriendly bioelectronic memory applications and in-memory computing.

Piezo-Acoustic Resistive Switching Behaviors in High-Performance Organic-Inorganic Hybrid Perovskite Memristors

Memristors are regarded as promising candidates for breaking the problems including high off-chip memory access delays and the hash rate cost of frequent data moving induced by algorithms for data-intensive applications of existing computational systems. Recently, organic-inorganic halide perovskites (OIHPs) have been recognized as exceptionally favorable materials for memristors due to ease of preparation, excellent electrical conductivity, and structural flexibility. However, research on OIHP-based memristors focuses on modulating resistive switching (RS) performance through electric fields, resulting in difficulties in moving away from complex external circuits and wire connections. Here, a multilayer memristor has been constructed with eutectic gallium and indium (EGaIn)/ MAPbI3 /poly(3,4-ethylenedioxythiophene): poly(4-styrenesulphonate) (PEDOT: PSS)/indium tin oxide (ITO) structure, which exhibits reproducible and reliable bipolar RS with low SET/RESET voltages, stable endurance, ultrahigh average ON/OFF ratio, and excellent retention. Importantly, based on ion migration activated by sound-driven piezoelectric effects, the device exhibits a stable acoustic response with an average ON/OFF ratio greater than 103 , thus realizing non-contact, multi-signal, and far-field control in RS modulation. This study provides a single-structure multifunctional memristor as an integrated architecture for sensing, data storage, and computing.

Polyacrylonitrile Passivation for Enhancing the Optoelectronic Switching Performance of Halide Perovskite Memristor for Image Boolean Logic Applications

For the CH3NH3PbI3-based optoelectronic memristor, the high ion-migration randomness induces high fluctuation in the resistive switching (RS) parameters. Grain boundaries (GBs) are well known as the ion-migration sites due to their low energy barrier. Herein, a polyacrylonitrile (PAN) passivation method is developed to reduce GBs of the CH3NH3PbI3 film and improve the switching uniformity of the memristor. The crystal grain size of CH3NH3PbI3 increases with the addition of PAN, and the corresponding number of GBs is consequently reduced. The fluctuations of the RS parameters of the memristor device are significantly reduced. With the memristor, nonvolatile image sensing, image memory, and image Boolean operations are demonstrated. This work proposes a strategy for developing high-performance CH3NH3PbI3 optoelectronic memristors.

A magnetic field controlled memristor towards the design of an implantable detector

Memristors, which combine the behaviors of memory and resistive switching (RS), have a wide application prospect in information processing and artificial neural networks. The RS memory behaviors of memristors are primarily determined by the functional layer materials, device structure, and working conditions. Herein, a CuMnO₂ nanomaterial with the manganese copper ore structure was prepared on a Ti substrate by hydrothermal method, and a memristor with the Ag/CuMnO₂/Ti sandwich structure was developed. The RS memory behavior of the as-prepared memristor can be regulated through a low magnetic field (MF), and thus the resistance value of device shows a multi-level resistance states. Compared with other regulation factors, the MF can remotely adjust and control the RS characteristics of memristor, which is a non-invasive and non-destructive regulatory means. The MF regulated memristor can not only be used for multi-level high-density information storage, but also it can protect the health of special populations by identifying the MF intensity of the surrounding environment. When the device is operated in an MF environment, the change of resistance value of the device in both high resistance state (HRS) and low resistance state (LRS) is mainly attributed to the influence of Loren magnetic force on conductive ions.

Metal Halide Perovskite/Electrode Contacts in Charge-Transporting-Layer-Free Devices

Metal halide perovskites have drawn substantial interest in optoelectronic devices in the past decade. Perovskite/electrode contacts are crucial for constructing high-performance charge-transporting-layer-free perovskite devices, such as solar cells, field-effect transistors, artificial synapses, memories, etc. Many studies have evidenced that the perovskite layer can directly contact the electrodes, showing abundant physicochemical, electronic, and photoelectric properties in charge-transporting-layer-free perovskite devices. Meanwhile, for perovskite/metal contacts, some critical interfacial physical and chemical processes are reported, including band bending, interface dipoles, metal halogenation, and perovskite decomposition induced by metal electrodes. Thus, a systematic summary of the role of metal halide perovskite/electrode contacts on device performance is essential. This review summarizes and discusses charge carrier dynamics, electronic band engineering, electrode corrosion, electrochemical metallization and dissolution, perovskite decomposition, and interface engineering in perovskite/electrode contacts-based electronic devices for a comprehensive understanding of the contacts. The physicochemical, electronic, and morphological properties of various perovskite/electrode contacts, as well as relevant engineering techniques, are presented. Finally, the current challenges are analyzed, and appropriate recommendations are put forward. It can be expected that further research will lead to significant breakthroughs in their application and promote reforms and innovations in future solid-state physics and materials science.

Enhanced resistive switching performance in yttrium-doped CH3NH3PbI3 perovskite devices

In this study, yttrium-doped CH₃NH₃PbI₃ (Y-MAPbI₃) and pure CH₃NH₃PbI₃ (MAPbI₃) perovskite films have been fabricated using a one-step solution spin coating method in a glove box. X-ray diffractometry and field-emission scanning electron microscopy were used to characterize the crystal structures and morphologies of perovskite films, respectively. It was found that the orientation of the crystal changed and the grains became more uniform in Y-MAPbI₃ film, compared with the pure MAPbI₃ perovskite film. The films were used to prepare the resistive switching memory devices with the device structure of Al/Y-MAPbI₃ (MAPbI₃)/ITO-glass. The memory performance of both devices was studied and showed a bipolar resistive switching behavior. The Al/MAPbI₃/ITO device had an endurance of about 328 cycles. In contrast, the Al/Y-MAPbI₃/ITO device exhibited an enhanced performance with a long endurance up to 3000 cycles. Moreover, the Al/Y-MAPbI₃/ITO device also showed a higher ON/OFF ratio of over 10³, long retention time (≥10⁴ s), lower operation voltage (±0.5 V) and outstanding reproducibility. Additionally, the conduction mechanism of the high resistance state transformed from space-charge limited current for a Y free device to the Schottky emission after Y doping. The present results indicate that the Al/Y-MAPbI₃/ITO device has a great potential to be used in high-performance memory devices.

Halide Perovskites: A New Era of Solution-Processed Electronics

Organic-inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light-emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up-to-date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite-based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite-based electronics as a competitive and feasible technology are highlighted.

Impact of Hydroiodic Acid on Resistive Switching Performance of Lead-Free Cs3Cu2I5 Perovskite Memory

Herein, we employed lead-free Cs₃Cu₂I₅ perovskite films as the functional layers to construct Al/Cs₃Cu₂I₅/ITO memory devices and systematically investigated the impact on the corresponding resistive switching (RS) performance via adding different amounts of hydroiodic acid (HI) in Cs₃Cu₂I₅ precursor solution. The results demonstrated that the crystallinity and morphology of the Cs₃Cu₂I₅ films can be improved and the resistive switching performance can be modulated by adding an appropriate amount of HI. The obtained Cs₃Cu₂I₅ films by adding 5 μL HI exhibit the fewest lattice defects and flattest surface (RMS = 13.3 nm). Besides, the memory device, utilizing the optimized films, has a low electroforming voltage (1.44 V), a large on/off ratio (∼65), and a long retention time (10⁴ s). The RS performance impacted by adding HI, providing a scientific strategy for improving the RS performance of iodine halide perovskite-based memories.

Long-lived electrets and lack of ferroelectricity in methylammonium lead bromide CH3NH3PbBr3 ferroelastic single crystals

Hybrid lead halides CH₃NH₃PbX₃ (X = I, Br, and Cl) have emerged as a new class of semiconductors for low-cost optoelectronic devices with superior performance. Since their perovskite crystal structure may have lattice instabilities against polar distortions, they are also being considered as potential photo-ferroelectrics. However, so far, research on their ferroelectricity has yielded inconclusive results and the subject is far from being settled. Here, we investigate, using a combined experimental and theoretical approach, the possible presence of electric polarization in tetragonal and orthorhombic CH₃NH₃PbBr₃ (T-MAPB and O-MAPB). We found that T-MAPB does not sustain spontaneous polarization but, under an external electric field, it is projected into a metastable, ionic space-charge electret state. The electret can be frozen on cooling, producing a large and long-lasting polarization in O-MAPB. Molecular dynamics simulations show that the ferroelastic domain boundaries are able to trap charges and segregate ionic point defects, thus playing a favorable role in the stabilization of the electret. At lower temperatures, the lack of ferroelectric behavior is explained using first principles calculations as the result of the tight competition among many metastable states with randomly oriented polarization; this large configurational entropy does not allow a single polar state to dominate at any significant temperature range.

Interface-Driven Multifunctionality in Two-Dimensional TiO2 Nanosheet/Poly(Dimercaptothiadiazole-Triazine) Hybrid Resistive Random Access Memory Device

Interface-driven multifunctional facets are gearing up in the field of science and technology. Here, we present the interface-activated resistive switching (RS), negative differential resistance, diode behavior, and ultraviolet (UV) light sensing in nanosheet-based hybrid devices. A hybrid device i.e., titanium dioxide nanosheet (TiO₂-NS)/poly(dimercaptothiadiazole-triazine)[Poly(DMcT-CC)] is fabricated by spin coating Poly(DMcT-CC) polymer on hydrothermally as-grown TiO₂-NS. The pristine devices of both materials show either small or no magnitude of RS, but the hybrid device shows highly enhanced RS of nearly four orders due to the formation of a p-n junction at the NS/polymer interface. The resistive random access memory feature appears to be more prominent in the hybrid device i.e., high and low current states are found to be stable in repetitive cycles since the interface acts as a trapping center for the carriers. The UV sensing ability of the hybrid device has been demonstrated by a threefold increment in a current at 60 mV. The impedance spectroscopy has been employed to show that the multifunctional features are directly associated to the NS/polymer interface, which deduce that the manipulation of such interfaces can pave the way for developing the hybrid structures.

Crystal Size Effect on Carrier Transport of Microscale Perovskite Junctions via Soft Contact

To reduce the size of optoelectronic devices, it is essential to understand the crystal size effect on the carrier transport through microscale materials. Here, we show a soft contact method to probe the properties of irregularly shaped microscale perovskite crystals by employing a movable liquid metal electrode to form a self-adaptative deformable electrode-perovskite-electrode junction. Accordingly, we demonstrate that (1) the photocurrents of perovskite quantum dot films and microplatelets show profound differences regarding both the on/off ratio and the response time upon light illumination; and (2) small-size perovskite (<50 μm) junctions may show negative differential resistance (NDR) behavior, whereas the NDR phenomenon is absent in large-size perovskite junctions within the same bias regime. Our studies provide a method for studying arbitrary-shaped crystals without mechanical damage, assisting the understanding of the photogenerated carriers transport through microscale crystals.

Extremely Low Program Current Memory Based on Self-Assembled All-Inorganic Perovskite Single Crystals

Memory devices based on lead halide perovskite have attracted great interests because of their unique current-voltage hysteresis. However, current memory devices based on polycrystalline perovskites usually suffer from large intrinsic electronic current and parasitic leakage current due to the existence of grain boundaries, which further leads to high power consumption. Here, a low-power resistance switching random-access memory device is demonstrated by assembling single-crystalline CsPbBr₃ on Ag electrodes. The assembled structure serves as a bipolar nonvolatile resistance switching memory device with a low program current (∼10 nA), good endurance, long data retention (>10³ S), and big on/off ratio of ∼10³. The low program current results in a power of ∼3 × 10^-8 W, which is much lower than that of polycrystalline perovskite-based devices (10^-1-10^-6 W). It is found that the formation and annihilation of Ag and bromide vacancy conductive filaments contribute to the significant resistive switching effect. At a low resistive state, the conductive filaments originate from the accumulation of Br^- ions at the drain. Furthermore, the conductive filaments are proved to be a cone shape, shrinking from the drain to the source.

Negative differential resistance effect in resistive switching devices based on h-LuFeO3/CoFe2O4 heterojunctions

The negative differential resistance (NDR) effect enables multilevel storage and gradual resistance modulation in resistive switching (RS) devices to be achieved. However, the poor reproducibility of NDR is the obstacle that restricts their application because the appearance of the NDR effect in RS devices is usually accidental or unstable at room temperature. In this report, we demonstrate a polarization and interfacial defect modulated NDR effect in h-LuFeO₃/CoFe₂O₄ heterojunction-based RS devices; especially, the NDR is reproducible after hundreds of cycles at room temperature. This research provides an effective way for realizing the reproducible NDR effect in ferroelectric RS devices, and it may promote the development and application of RS devices with the NDR effect.

Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-volatile Memories

Ion migration, one origin of current-voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen-Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/OFF ratio of RPP-based devices is strongly dependent on the layers and peaks at n̅ = 5, demonstrating the highest ON/OFF ratio of ∼10⁴ and minimal operation voltage in 1.0 mm² devices. Long data retention even in 60% relative humidity and stable write/erase capabilities exemplify their potential for memory applications. Impedance spectroscopy reveals a chemical reaction between migrating ions and the external contacts to modify the charge transfer barrier at the interface to control the resistive states. Our findings explore a new family of facile materials and the necessity of ionic population, migration, and their reactivity with external contacts in devices for switching and memory applications.

Current Oscillations and Intermittent Emission Near an Electrode Interface in a Hybrid Organic-Inorganic Perovskite Single Crystal

Hybrid organic-inorganic lead perovskites have a great potential in optoelectronic device applications because of their high stability, narrow band emission, and strong luminescence. Single crystals with few defects are the best candidates to disclose a variety of interesting and important properties for light-emitting devices. Here, we investigate a single-crystalline CH₃NH₃PbBr₃ perovskite for its transport and electroluminescence properties. A simple fabrication method was used to obtain a 10 ± 2 μm channel between two gold wire electrodes, which showed bright intermittent electroluminescence near the interface of one wire after cooling down with a constant biasing voltage. The active region of the perovskite single crystal was pristine, well isolated from surroundings through fabrication to the characterization process. Our presented sample provided an ideal condition to study bulk ionic-electronic properties of hybrid halide perovskites. At constant 6 V bias, the current through the sample shows temperature-dependent oscillation with Arrhenius behavior, suggesting a thermally activated process. The light emission from the sample experiences an intermittent emission rate once every 26 ± 6 min. Here, we envisage that the current oscillations and intermittent emission are caused by ion-mediated negative differential resistance and conductive filament formation, respectively. The latter observation inspires future applications of the material from neuromorphic computing to the development of electroluminescence devices.

In-plane rotation and transition from rectification to bipolar resistive switching in ZnO/SrTiO3:Nb heterojunctions by substrate pretreatment

The growth behavior and electrical transport properties of ZnO films was found to be strongly dependent on the deionized water soaking treatment of 0.7 wt% (111) SrTiO3:Nb substrates. Comparing the ZnO films on soaked SrTiO3:Nb substrates with those on unsoaked ones, the out-of-plane orientation of ZnO films are both along the c-axis, while there is an in-plane rotation of ZnO thin films. According to the variable frequency capacitance-voltage measurements, a much higher interface state density is found in the ZnO/soaked-SrTiO3:Nb heterojunction than that in the ZnO/unsoaked-SrTiO3:Nb heterojunction. Moreover, a rectification and bipolar resistive switching effect were observed in the ZnO/unsoaked-SrTiO3:Nb and ZnO/soaked-SrTiO3:Nb heterojunctions, respectively. The transition from rectification to a bipolar resistive switching effect can be ascribed to an increase of oxygen vacancies, the migration of which plays an important part in the resistive switching.

Enhanced Switching Ratio and Long-Term Stability of Flexible RRAM by Anchoring Polyvinylammonium on Perovskite Grains

The ON/OFF ratio and long-term stability are two important issues for flexible organic-inorganic hybrid perovskite (OHP) resistive random access memory (RRAM) for practical applications. In this work, polyvinylammonium (PVAm) is applied to partially replace methylamine ions (MA⁺) to fabricate the stable and flexible polymeric OHP RRAM devices, wherein PVAm acts as nucleation sites and the template for crystalline growth of MAPbI₃ to tune the microscopic perovskite structure. Simultaneously, the multiple perovskite grain interfaces are strengthened through the long-carbochain polymeric backbone, hence producing a continuous and compact perovskite film. As a result, the PVAm-modified OHP RRAM device shows remarkable enhancement of the ON/OFF ratio, long-term stability, and flexibility compared with the unmodified OHP device. Specifically, the polymeric OHP device exhibits fast and stable nonvolatile resistive switching (RS) characteristics with an ON/OFF ratio of ∼10⁵ and a set voltage of -0.45 V under ambient conditions. Also, the distinct multilevel RS behavior can be realized in this device by controlling the compliance current in the SET process. Additionally, the unsealed polymeric OHP device manifests the striking long-term stability, which can still maintain the stable memory performance after 1 year exposure to the humid and thermal ambient environment. Furthermore, the flexible polymeric OHP device was also fabricated and affords the excellent bending endurance behavior by showing a reproducible RS property over 100-cycle bending experiments. This work provides a new perovskite-based material design strategy of polymeric OHP for stable and flexible RRAM devices with the high ON/OFF ratio.

Two-Dimensional WSe2/Organic Acceptor Hybrid Nonvolatile Memory Devices Based on Interface Charge Trapping

Two-dimensional (2D) materials, with atomic thickness and unique electronic structure, hold great potentials in electronic device applications. Charge transfer at the interface of 2D materials further provides a versatile platform for applications in electronics. Here, we report nonvolatile memory devices based on interface charge trapping between 2D WSe₂ and organic electron acceptors. The 2D WSe₂-organic acceptor hybrid structure exhibits a high storage performance, such as large gate memory windows, high on/off ratios (>10³), and long retention time (>1000 s). Further analysis revealed that organic acceptors with a stronger electron affinity (i.e., higher redox potential) have a larger electron-trapping ability and hence a better memory performance.

High-Performance Nanofloating Gate Memory Based on Lead Halide Perovskite Nanocrystals

Lead halide perovskites have been extensively investigated in a host of optoelectronic devices, such as solar cells, light-emitting diodes, and photodetectors. The halogen vacancy defects arising from the halogen-poor growth environment are normally regarded as an unfavorable factor to restrict the device performance. Here, for the first time, we demonstrate the utilization of the vacancy defects in lead halide perovskite nanostructures for achieving high-performance nanofloating gate memories (NFGMs). CH₃NH₃PbBr₃ nanocrystals (NCs) were uniformly decorated on the CdS nanoribbon (NR) surface via a facile dip-coating process, forming a CdS NR/CH₃NH₃PbBr₃ NC core-shell structure. Significantly, owing to the existence of sufficient carrier trapping states in CH₃NH₃PbBr₃ NCs, the hybrid device possessed an ultralarge memory window up to 77.4 V, a long retention time of 12 000 s, a high current ON/OFF ratio of 7 × 10⁷, and a long-term air stability for 50 days. The memory window of the device is among the highest for the low-dimensional nanostructure-based NFGMs. Also, this strategy shows good universality and can be extended to other perovskite nanostructures for the construction of high-performance NFGMs. This work paves the way toward the fabrication of new-generation, high-capacity nonvolatile memories using lead halide perovskite nanostructures.

Origins of Negative Differential Resistance in N-doped ZnO Nano-ribbons: Ab-initio Investigation

The electronic transport in low-dimensional materials is controlled by quantum coherence and non-equilibrium statistics. The scope of the present investigation is to search for the origins of negative-differential resistance (NDR) behavior in N-doped ultra-narrow zigzag-edge ZnO nano-ribbons (ZnO-NRs). A state-of-the-art technique, based on a combination of density-functional theory (DFT) and non-equilibrium Green's function (NEGF) formalism, is employed to probe the electronic and transport properties. The effect of location of N dopant, with respect to the NR edges, on IV-curve and NDR is tested and three different positions for N-atom are considered: (i) at the oxygen-rich edge; (ii) at the center; and (iii) at the Zn-rich edge. The results show that both resistance and top-to-valley current ratio (TVCR) reduce when N-atom is displaced from O-rich edge to center to Zn-rich edge, respectively. After an analysis based on the calculations of transmission coefficient versus bias, band structures, and charge-density plots of HOMO/LUMO states, one is able to draw a conclusion about the origins of NDR. The unpaired electron of N dopant is causing the curdling/localization of wave-function, which in turn causes strong back-scattering and suppression of conductive channels. These effects manifest themselves in the drawback of electric current (or so called NDR). The relevance of NDR for applications in nano-electronic devices (e.g., switches, rectifiers, amplifiers, gas sensing) is further discussed.

Tunable hysteresis behaviour related to trap filling dependence of surface barrier in an individual CH3NH3PbI3 micro/nanowire

Hybrid organic-inorganic perovskite (HOIP) materials have remarkable potential in solar cells owing to their high power conversion efficiency and inexpensive preparation. However, their current-voltage (I-V) curves often exhibit hysteresis characteristics, which not only strongly affect the accuracy of measurements but also seriously impair device performance, and, moreover, their actual origin is still the subject of debate. Here, a single HOIP micro/nanowire-based two-terminal device was constructed. Not only can its hysteresis properties be accurately modulated, but also their origin can clearly be identified as variations in the surface barrier related to trap filling. Under illumination of the entire device with visible (VIS) light, two anticlockwise hysteresis loops appear symmetrically in cyclic I-V curves. Interestingly, the cyclic I-V curves can be switchably changed into asymmetrical "8"-shaped hysteresis loops with bipolar resistive switching (RS) features when only the vicinity of one electrode is illuminated. The traps located in the surface space charge region play a crucial role in the tunable hysteresis behaviour. Owing to the presence of abundant surface states, two back-to-back connected diodes related to the surface barrier can be formed in the two-terminal device. With the synergistic assistance of illumination and bias, moreover, the injection and extraction of holes in the surface space charge region can effectively modulate the surface barrier, which triggers the formation of a bipolar RS device. Accordingly, two switchable back-to-back connected bipolar RS devices were built. Regarding the tunable hysteresis with nonvolatile memory properties controlled by the synergistic action of bias and illumination, our results provide a valuable insight into the identification of its origin and, furthermore, also indicate that the HOIP materials have significant potential in nonvolatile memory applications.