Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films

Investigation of Mode-Induced Spin Wave Transmission Blockage by In Situ Nanoscale Grooves

In the pursuit of advancing spin-wave optics, the propagation of magnetostatic surface spin-waves is investigated in a uniform permalloy waveguide with in-situ nanopatterned grooves created through Atomic Force Microscopy nanolithography and Focused Ion Beam etching. The study unveils that the introduction of narrow constrictions and grooves leads to a non-monotonic reduction of the transmitted spin-wave signal intensity as the spin-wave pathway is shrinked. The remarkable feature that a stronger signal extinction is obtained for a narrow groove compared to a spin-waveguide interrupted by a full gap, where only inefficient transport through dipolar coupling is allowed, is highlighted. Combining experimental and numerical analyses, the intricate interplay between spin-wave diffraction and reflection at the waveguide edges is unraveled, being at the origin of a transverse-mode variation responsible for the signal extinction when detected using coplanar antennas. The findings offer insights into the controllable manipulation of detected spin-wave intensity, thereby opening promising avenues for the improvement of spin-wave switches and interferometers, and for the nanopatterning of graded index magnonics.

Electrochemically driven physical properties of solid-state materials: action mechanisms and control schemes

The various physical properties recently induced by solid-state electrochemical reactions must be comprehensively understood, and their mechanisms of action should be elucidated. Reversible changes in conductivity, magnetism, and colour have been achieved by combining the redox reactions of d metal ions and organic materials, as well as the molecular and crystal structures of solids. This review describes the electrochemically driven physical properties of conductors, magnetic materials, and electrochromic materials using various electrochemical devices.

Tuning the superconducting performance of YBa2Cu3O7-δ films through field-induced oxygen doping

The exploration of metal-insulator transitions to produce field-induced reversible resistive switching effects has been a longstanding pursuit in materials science. Although the resistive switching effect in strongly correlated oxides is often associated with the creation or annihilation of oxygen vacancies, the underlying mechanisms behind this phenomenon are complex and, in many cases, still not clear. This study focuses on the analysis of the superconducting performance of cuprate YBa2Cu3O7-δ (YBCO) devices switched to different resistive states through gate voltage pulses. The goal is to evaluate the effect of field-induced oxygen diffusion on the magnetic field and angular dependence of the critical current density and identify the role of induced defects in the switching performance. Transition electron microscopy measurements indicate that field-induced transition to high resistance states occurs through the generation of YBa2Cu4O7 (Y124) intergrowths with a large amount of oxygen vacancies, in agreement with the obtained critical current density dependences. These results have significant implications for better understanding the mechanisms of field-induced oxygen doping in cuprate superconductors and their role on the superconducting performance.

Direct Visualization of Current-Stimulated Oxygen Migration in YBa2Cu3O7-δ Thin Films

The past years have witnessed major advancements in all-electrical doping control on cuprates. In the vast majority of cases, the tuning of charge carrier density has been achieved via electric field effect by means of either a ferroelectric polarization or using a dielectric or electrolyte gating. Unfortunately, these approaches are constrained to rather thin superconducting layers and require large electric fields in order to ensure sizable carrier modulations. In this work, we focus on the investigation of oxygen doping in an extended region through current-stimulated oxygen migration in YBa₂Cu₃O_7-δ superconducting bridges. The underlying methodology is rather simple and avoids sophisticated nanofabrication process steps and complex electronics. A patterned multiterminal transport bridge configuration allows us to electrically assess the directional counterflow of oxygen atoms and vacancies. Importantly, the emerging propagating front of current-dependent doping δ is probed in situ by optical microscopy and scanning electron microscopy. The resulting imaging techniques, together with photoinduced conductivity and Raman scattering investigations, reveal an inhomogeneous oxygen vacancy distribution with a controllable propagation speed permitting us to estimate the oxygen diffusivity. These findings provide direct evidence that the microscopic mechanism at play in electrical doping of cuprates involves diffusion of oxygen atoms with the applied current. The resulting fine control of the oxygen content would permit a systematic study of complex phase diagrams and the design of electrically addressable devices.

Nanoscale Correlations between Metal-Insulator Transition and Resistive Switching Effect in Metallic Perovskite Oxides

Strongly correlated perovskite oxides are a class of materials with fascinating intrinsic physical functionalities due to the interplay of charge, spin, orbital ordering, and lattice degrees of freedom. Among the exotic phenomena arising from such an interplay, metal-insulator transitions (MITs) are fundamentally still not fully understood and are of large interest for novel nanoelectronics applications, such as resistive switching-based memories and neuromorphic computing devices. In particular, rare-earth nickelates and lanthanum strontium manganites are archetypical examples of bandwidth-controlled and band-filling-controlled MIT, respectively, which are used in this work as a playground to correlate the switching characteristics of the oxides and their MIT properties by means of local probe techniques in a systematic manner. These findings suggest that an electric-field-induced MIT can be triggered in these strongly correlated systems upon generation of oxygen vacancies and establish that lower operational voltages and larger resistance ratios are obtained in those films where the MIT lies closer to room temperature. This work demonstrates the potential of using MITs in the next generation of nanoelectronics devices.

Electrical conduction mechanisms of metal / high-T c superconductor (YBCO) interfaces

Current-voltage characteristics of Au/YBa₂Cu₃O[Formula: see text] interfaces (Au/YBCO), built on optimally-doped YBCO thin films, grown by pulsed laser deposition, were measured as a function of temperature in the 50 K to 270 K range, for two different resistance states. A non-trivial equivalent circuit model is proposed, which reveals the existence of a highly inhomogeneous scenario composed by two complex layers: one presenting both a non-linear Poole-Frenkel conduction as well as variable range hopping localization effects (probably associated with YBa₂Cu₃O₆) mixed with a minor metallic phase, while the other is also composed by a mixture of YBCO with different oxygen contents, where a metallic ohmic phase still percolates. A microscopic description of the effects produced by the resistance switching is given, showing the evolution of carrier traps, localization effects and dielectric behavior for each state. The dielectric behavior is interpreted in terms of a Maxwell-Wagner scenario.

Multi-terminal Transistor-like Devices Based on Strongly Correlated Metallic Oxides for Neuromorphic Applications

Memristive devices are attracting a great attention for memory, logic, neural networks, and sensing applications due to their simple structure, high density integration, low-power consumption, and fast operation. In particular, multi-terminal structures controlled by active gates, able to process and manipulate information in parallel, would certainly provide novel concepts for neuromorphic systems. In this way, transistor-based synaptic devices may be designed, where the synaptic weight in the postsynaptic membrane is encoded in a source-drain channel and modified by presynaptic terminals (gates). In this work, we show the potential of reversible field-induced metal-insulator transition (MIT) in strongly correlated metallic oxides for the design of robust and flexible multi-terminal memristive transistor-like devices. We have studied different structures patterned on YBa2Cu3O7-δ films, which are able to display gate modulable non-volatile volume MIT, driven by field-induced oxygen diffusion within the system. The key advantage of these materials is the possibility to homogeneously tune the oxygen diffusion not only in a confined filament or interface, as observed in widely explored binary and complex oxides, but also in the whole material volume. Another important advantage of correlated oxides with respect to devices based on conducting filaments is the significant reduction of cycle-to-cycle and device-to-device variations. In this work, we show several device configurations in which the lateral conduction between a drain-source channel (synaptic weight) is effectively controlled by active gate-tunable volume resistance changes, thus providing the basis for the design of robust and flexible transistor-based artificial synapses.