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Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
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Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
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Noh S, Shin J, Lee J, Oh HM, Yu YT, Kim JS. Improvement in Photoelectrochemical Water Splitting Performance of GaN-nanowire Photoanode Using MXene. ACS APPLIED MATERIALS & INTERFACES 2024; 16:8016-8023. [PMID: 38294420 DOI: 10.1021/acsami.3c15698] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
The photoelectrochemical water splitting (PEC-WS) performance of a photoanode consisting of GaN nanowires (NWs) is significantly improved using a Ti3C2-MXene coating as an intermediate layer to promote carrier transfer toward the electrolyte. The maximum current density and applied-bias photon-to-current efficiency of the photoanode comprising GaN NWs coated with Ti3C2-MXene (MGNWs) are measured to be 34.24 mA/cm2 and 14.47% at 1.2 and 0.4 V versus a reversible hydrogen electrode (RHE), respectively. These values are much higher than those of the GaN-NW photoanode without Ti3C2-MXene (4.04 mA/cm2 and 1.95%) and also markedly exceed those of previously reported photoanodes. After 8 days of PEC-WS, the current density was measured to be 31.07 mA/cm2, which corresponds to 97.58% of that measured immediately after the reaction started. Based on the time dependence of the current density, the hydrogen evolution rate over the reaction time is calculated to be 0.58 mmol/cm2·h. The results confirm that the PEC-WS performance of the optimized MGNW photoanode is superior to and more stable than those of previously reported photoanodes.
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Affiliation(s)
- Siyun Noh
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Jaehyeok Shin
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Jinseong Lee
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Hye Min Oh
- Department of Physics, Kunsan National University, Gunsan 54150, South Korea
| | - Yeon-Tae Yu
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Jin Soo Kim
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
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Meng Y, Zhong H, Xu Z, He T, Kim JS, Han S, Kim S, Park S, Shen Y, Gong M, Xiao Q, Bae SH. Functionalizing nanophotonic structures with 2D van der Waals materials. NANOSCALE HORIZONS 2023; 8:1345-1365. [PMID: 37608742 DOI: 10.1039/d3nh00246b] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.
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Affiliation(s)
- Yuan Meng
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Hongkun Zhong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Zhihao Xu
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Tiantian He
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Justin S Kim
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Sangmoon Han
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Sunok Kim
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Seoungwoong Park
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Yijie Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- Optoelectronics Research Centre, University of Southampton, Southampton, UK
| | - Mali Gong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Qirong Xiao
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
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Noh S, Shin J, Yu YT, Ryu MY, Kim JS. Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13020358. [PMID: 36678111 PMCID: PMC9861914 DOI: 10.3390/nano13020358] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Revised: 01/11/2023] [Accepted: 01/13/2023] [Indexed: 06/01/2023]
Abstract
We report the improvement in photoelectrochemical water splitting (PEC-WS) by controlling migration kinetics of photo-generated carriers using InGaN/GaN hetero-structure nanowires (HSNWs) as a photocathode (PC) material. The InGaN/GaN HSNWs were formed by first growing GaN nanowires (NWs) on an Si substrate and then forming InGaN NWs thereon. The InGaN/GaN HSNWs can cause the accumulation of photo-generated carriers in InGaN due to the potential barrier formed at the hetero-interface between InGaN and GaN, to increase directional migration towards electrolyte rather than the Si substrate, and consequently to contribute more to the PEC-WS reaction with electrolyte. The PEC-WS using the InGaN/GaN-HSNW PC shows the current density of 12.6 mA/cm2 at -1 V versus reversible hydrogen electrode (RHE) and applied-bias photon-to-current conversion efficiency of 3.3% at -0.9 V versus RHE. The high-performance PEC-WS using the InGaN/GaN HSNWs can be explained by the increase in the reaction probability of carriers at the interface between InGaN NWs and electrolyte, which was analyzed by electrical resistance and capacitance values defined therein.
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Affiliation(s)
- Siyun Noh
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Jaehyeok Shin
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Yeon-Tae Yu
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Mee-Yi Ryu
- Department of Physics, Kangwon National University, Chuncheon 24341, Republic of Korea
| | - Jin Soo Kim
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
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Shin J, Yang H, Noh S, Han S, Kim JS. Flexible 1.3 μm photodetector fabricated with InN nanowires and graphene on overhead projector transparency sheet. NANOSCALE 2022; 14:10793-10800. [PMID: 35838175 DOI: 10.1039/d2nr01802k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We report the first demonstration of flexible photodetectors, operating at the wavelength window of 1.3 μm, fabricated with InN nanowires (NWs) and graphene on an overhead projector transparency (OHP) sheet. The InN NWs, used as an absorption medium for the device, were formed on a Si substrate and exhibited strong emission with a peak wavelength of 1.3 μm at room temperature. They were randomly and horizontally embedded in the graphene sandwich structure functioned as a carrier channel. The photocurrent and photoresponsivity of the flexible photodetector were found to be 1.17 mA and 0.48 A W-1, respectively, at a voltage of 1 V and a light intensity of 60 mW cm-2 of a xenon lamp. The photocurrent measured when the photodetector was bent under a strain of 3% was 1.15 mA, which corresponds to 98.3% compared to that before bending. Moreover, the photocurrent and photoresponsivity of the flexible photodetector measured after the 200 cyclic-bending tests are comparable to those measured before bending.
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Affiliation(s)
- Jaehyeok Shin
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea.
| | - Hohyun Yang
- Smart Electronics Research Center, Korea Electronics Technology Institute, Iksan 54596, Republic of Korea
| | - Siyun Noh
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea.
| | - Sangmoon Han
- Precision Biology Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Mechanical Engineering & Materials Science, Washington University in Saint Louis, MO 66130, USA
| | - Jin Soo Kim
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea.
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Shin J, Han S, Noh S, Yu YT, Kim JS. Room-temperature operation of light-assisted NO 2gas sensor based on GaN nanowires and graphene. NANOTECHNOLOGY 2021; 32:505201. [PMID: 34490848 DOI: 10.1088/1361-6528/ac2427] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2021] [Accepted: 09/03/2021] [Indexed: 06/13/2023]
Abstract
We report the successful demonstration of a light-assisted NO2gas sensor that operates at room temperature with high response. The gas sensor was fabricated with high-crystalline undoped-GaN nanowires (NWs) and graphene functioning as the light-absorbing medium and carrier channel, respectively. Exposure of the gas sensor to the NO2concentration of 100 ppm at a light intensity of 1 mW cm-2of a xenon lamp delivered a response of 16% at room temperature, which increased to 23% when the light intensity increased to 100 mW cm-2. This value is higher than those previously reported for GaN-based NO2gas sensors operating at room temperature. The room-temperature response of the gas sensor measured after six months was calculated to be 21.9%, which corresponds to 95% compared to the value obtained immediately after fabricating the devices. The response of the gas sensor after independently injecting NO2, H2S, H2, CO, and CH3CHO gases were measured to be 23, 5, 2.6, 2.2, and 1.7%, respectively. These results indicate that the gas sensor using GaN NWs and graphene provides high response, long-term stability, and good selectivity to NO2gas at room temperature. In addition, the use of undoped-GaN NWs without using additional catalysts makes it possible to fabricate gas sensors that operate at room temperature simpler and better than conventional technologies.
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Affiliation(s)
- Jaehyeok Shin
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Sangmoon Han
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Siyun Noh
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Yeon-Tae Yu
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Jin Soo Kim
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea
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Ji YH, Gao Q, Huang AP, Yang MQ, Liu YQ, Geng XL, Zhang JJ, Wang RZ, Wang M, Xiao ZS, Chu PK. GaO x@GaN Nanowire Arrays on Flexible Graphite Paper with Tunable Persistent Photoconductivity. ACS APPLIED MATERIALS & INTERFACES 2021; 13:41916-41925. [PMID: 34448583 DOI: 10.1021/acsami.1c13355] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Flexible optoelectronic synaptic devices that functionally imitate the neural behavior with tunable optoelectronic characteristics are crucial to the development of advanced bioinspired neural networks. In this work, amorphous oxide-decorated GaN nanowire arrays (GaOx@GaN NWAs) are prepared on flexible graphite paper. A GaOx@GaN NWA-based flexible device has tunable persistent photoconductivity (PPC) and shows a conversible fast/slow decay process (SDP). Photoconductivity can be modulated by single or double light pulses with different illumination powers and biases. PPC gives rise to the high-performance SDP such as a long decay time of 2.3 × 105 s. The modulation mechanism is proposed and discussed. Our results reveal an innovative and efficient strategy to produce decorated NWAs on a flexible substrate with tunable optoelectronic properties and exhibit potential for flexible neuromorphic system applications.
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Affiliation(s)
- Yu-Hang Ji
- School of Physics, Beihang University, Beijing 100191, China
| | - Qin Gao
- School of Physics, Beihang University, Beijing 100191, China
| | - An-Ping Huang
- School of Physics, Beihang University, Beijing 100191, China
| | - Meng-Qi Yang
- Institute of New Energy Materials and Devices, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Yan-Qi Liu
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 999077, China
| | - Xue-Li Geng
- School of Physics, Beihang University, Beijing 100191, China
| | - Jing-Jing Zhang
- School of Physics, Beihang University, Beijing 100191, China
| | - Ru-Zhi Wang
- Institute of New Energy Materials and Devices, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Mei Wang
- School of Physics, Beihang University, Beijing 100191, China
| | - Zhi-Song Xiao
- School of Physics, Beihang University, Beijing 100191, China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon 518057, Hong Kong, China
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Han S, Noh S, Kim JW, Lee CR, Lee SK, Kim JS. Stretchable Inorganic GaN-Nanowire Photosensor with High Photocurrent and Photoresponsivity. ACS APPLIED MATERIALS & INTERFACES 2021; 13:22728-22737. [PMID: 33969979 DOI: 10.1021/acsami.1c03023] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
To effectively implement wearable systems, their constituent components should be made stretchable. We successfully fabricated highly efficient stretchable photosensors made of inorganic GaN nanowires (NWs) as light-absorbing media and graphene as a carrier channel on polyurethane substrates using the pre-strain method. When a GaN-NW photosensor was stretched at a strain level of 50%, the photocurrent was measured to be 0.91 mA, corresponding to 87.5% of that (1.04 mA) obtained in the released state, and the photoresponsivity was calculated to be 11.38 A/W. These photosensors showed photocurrent and photoresponsivity levels much higher than those previously reported for any stretchable semiconductor-containing photosensor. To explain the superior performances of the stretchable GaN-NW photosensor, it was approximated as an equivalent circuit with resistances and capacitances, and in this way, we analyzed the behavior of the photogenerated carriers, particularly at the NW-graphene interface. In addition, the buckling phenomenon typically observed in organic-based stretchable devices fabricated using the pre-strain method was not observed in our photosensors. After a 1000-cycle stretching test with a strain level of 50%, the photocurrent and photoresponsivity of the GaN-NW photosensor were measured to be 0.96 mA and 11.96 A/W, respectively, comparable to those measured before the stretching test. To evaluate the potential of our stretchable devices in practical applications, the GaN-NW photosensors were attached to the proximal interphalangeal joint of the index finger and to the back of the wrist. Photocurrents of these photosensors were monitored during movements made about these joints.
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Affiliation(s)
- Sangmoon Han
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Siyun Noh
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Jong-Woong Kim
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Cheul-Ro Lee
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Seoung-Ki Lee
- School of Materials Science and Engineering, Pusan National University, Busan 46241, South Korea
| | - Jin Soo Kim
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
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Han S, Noh S, Yu YT, Lee CR, Lee SK, Kim JS. Highly Efficient Photoelectrochemical Water Splitting Using GaN-Nanowire Photoanode with Tungsten Sulfides. ACS APPLIED MATERIALS & INTERFACES 2020; 12:58028-58037. [PMID: 33337852 DOI: 10.1021/acsami.0c17811] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In the present study, we have achieved high-performance photoelectrochemical water splitting (PEC-WS) using GaN nanowires (NWs) coated with tungsten sulfide (WxS1-x) (GaN-NW-WxS1-x) as a photoanode. The measured current density and applied-bias photon-to-current efficiency were 20.38 mA/cm2 and 13.76%, respectively. These values were much higher than those reported previously for photoanodes with any kind of III-nitride nanostructure. The amount of hydrogen gas formed was 1.01 mmol/cm2 from 7 h PEC-WS, which was also much higher than the previously reported values. The drastic improvement in the PEC-WS performance using the GaN-NW-WxS1-x photoanode was attributed to an increase in the number of photogenerated carriers due to the highly crystalline GaN NWs, and acceleration of separation of photogenerated carriers and consequent suppression of charge recombination because of nitrogen-terminated surfaces of NWs, sulfur vacancies in WxS1-x, and type-II band alignment between NW and WxS1-x. The degree of impedance matching, evaluated from Nyquist plots, was considered to analyze charge transfer characteristics at the interface between the GaN-NW-WxS1-x photoanode and 0.5-M H2SO4 electrolyte. Considering the material system and scheme for the PEC-WS, our approach provides an efficient way to improve hydrogen evolution reaction.
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Affiliation(s)
- Sangmoon Han
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Siyun Noh
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Yeon-Tae Yu
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Cheul-Ro Lee
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Seoung-Ki Lee
- Applied Quantum Composites Research Center, Korea Institute of Science and Technology, Wanju 55324, South Korea
| | - Jin Soo Kim
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
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Han S, Choi I, Lee CR, Jeong KU, Lee SK, Kim JS. Fast Response Characteristics of Flexible Ultraviolet Photosensors with GaN Nanowires and Graphene. ACS APPLIED MATERIALS & INTERFACES 2020; 12:970-979. [PMID: 31840489 DOI: 10.1021/acsami.9b13109] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report the fast response characteristics of flexible ultraviolet photosensors with GaN nanowires (NWs) and a graphene channel. The GaN NWs used as light-absorbing media are horizontally and randomly embedded in a graphene sandwich structure in which the number of bottom graphene layers is varied from zero to three and the top is a fixed single layer of graphene. In the response curve of the photosensor with a double-layer bottom graphene, as obtained under pulsed illumination with a pulse width of 50 ms and a duty cycle of 50%, the rise and decay times were measured as 24.1 ± 0.1 and 28.2 ± 0.1 ms, respectively. The eye-crossing percentage was evaluated as 52.1%, indicating no substantial distortion of the duty cycle and no pulse symmetry problem. The rise and decay times estimated from an equivalent circuit analysis represented by resistances and capacitances agree well with the measured values. When the device was under the bending condition, the rise and decay times of the photosensor were comparable to those in the unbent state.
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Affiliation(s)
| | | | | | | | - Seoung-Ki Lee
- Applied Quantum Composites Research Center , Korea Institute of Science and Technology , Wanju 55324 , South Korea
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Zheng Y, Wang W, Li Y, Lan J, Xia Y, Yang Z, He X, Li G. Self-Integrated Hybrid Ultraviolet Photodetectors Based on the Vertically Aligned InGaN Nanorod Array Assembly on Graphene. ACS APPLIED MATERIALS & INTERFACES 2019; 11:13589-13597. [PMID: 30892870 DOI: 10.1021/acsami.9b00940] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Integration of one-dimensional (1D) semiconductors with two-dimensional (2D) materials into hybrid systems is identified as promising applications for new optoelectronic and photodetection devices. Herein, a self-integrated hybrid ultraviolet (UV) photodetector based on InGaN nanorod arrays (NRAs) sandwiched between transparent top and back graphene contacts forming a Schottky junction has been demonstrated for the first time. The controlled van der Waals epitaxy of the vertically aligned InGaN NRA assembly on graphene-on-Si substrates is achieved by plasma-assisted molecular beam epitaxy. Moreover, the self-assembly formation mechanisms of InGaN NRAs on graphene are clarified by theoretical calculations with first-principles calculations based on density functional theory. The peculiar 1D/2D heterostructure hybrid system-based integrated UV photodetector simultaneously exhibits ultrafast response time (∼50 μs) and superhigh photosensitivity (∼105 A/W). It is highly believed that the concept proposed in this work has a great potential and can be widely applied for the next-generation integrated 1D/2D nano-based optoelectronic and photodetection devices.
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Affiliation(s)
- Yulin Zheng
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
| | - Wenliang Wang
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
- Guangdong Choicore Optoelectronics Co. Ltd. , Heyuan 517003 , China
| | - Yuan Li
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
| | - Jianyu Lan
- State Key Laboratory of Space Technology , Shanghai Institute of Space Power Sources , Shanghai 200245 , China
| | - Yu Xia
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
| | - Zhichao Yang
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
| | - Xiaobin He
- State Key Laboratory of Space Technology , Shanghai Institute of Space Power Sources , Shanghai 200245 , China
| | - Guoqiang Li
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
- Guangdong Choicore Optoelectronics Co. Ltd. , Heyuan 517003 , China
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