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Ogunfowora LA, Singh I, Arellano N, Pattison TG, Magbitang T, Nguyen K, Ransom B, Lionti K, Nguyen S, Topura T, Delenia E, Sherwood M, Savoie BM, Wojtecki R. Reactive Vapor-Phase Inhibitors for Area-Selective Depositions at Tunable Critical Dimensions. ACS APPLIED MATERIALS & INTERFACES 2024; 16:5268-5277. [PMID: 38206307 DOI: 10.1021/acsami.3c14821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Area-selective depositions (ASD) take advantage of the chemical contrast between material surfaces in device fabrication, where a film can be selectively grown by chemical vapor deposition on metal versus a dielectric, for instance, and can provide a path to nontraditional device architectures as well as the potential to improve existing device fabrication schemes. While ASD can be accessed through a variety of methods, the incorporation of reactive moieties in inhibitors presents several advantages, such as increasing thermal stability and limiting precursor diffusion into the blocking layer. Alkyne-terminated small molecule inhibitors (SMIs)─propargyl, dipropargyl, and tripropargylamine─were evaluated as metal-selective inhibitors. Modeling these SMIs provided insight into the binding mechanism, influence of sterics, and complex polymer network formed from the reaction between inhibitors consisting of alkene, aromatic, and network branchpoints. While a significant contrast in the binding of the SMIs on copper versus a dielectric was observed, residual amounts were detected on the dielectric surfaces, leading to variable ALD growth rates dependent on pattern-critical dimensions. This behavior can be controlled and utilized to direct film growth on patterns only above a critical threshold dimension; below this threshold, both the dielectric and metal features are protected. This method provides another design parameter for ASD processes and may extend its application to broader-ranging device fabrication schemes.
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Affiliation(s)
- Lawal Adewale Ogunfowora
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Ishwar Singh
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Noel Arellano
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Thomas G Pattison
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Teddie Magbitang
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Khanh Nguyen
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Brandi Ransom
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Krystelle Lionti
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Son Nguyen
- International Business Machines─Semiconductor Technology Research, Albany, New York 12203, United States
| | - Teya Topura
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Eugene Delenia
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Mark Sherwood
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Brett M Savoie
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Rudy Wojtecki
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
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Chou YW, Chang SY, Keng PY. Thermal Stability and Orthogonal Functionalization of Organophosphonate Self-Assembled Monolayers as Potential Liners for Cu Interconnect. ACS OMEGA 2023; 8:39699-39708. [PMID: 37901487 PMCID: PMC10601072 DOI: 10.1021/acsomega.3c05629] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Accepted: 09/29/2023] [Indexed: 10/31/2023]
Abstract
In this study, we investigated the thermal stabilities of butylphosphonic acid (BPA) and aminopropyltriethoxysilane (APTES) self-assembled monolayers (SAM) on a Si substrate. The thermal desorption and the thermal cleavage of the BPA and APTES SAM film on the Si substrate were studied by X-ray photoelectron spectroscopy (XPS) upon thermal treatment from 50 to 550 °C. XPS analyses show that the onset of the thermal desorption of the APTES monolayer occurs at 250 °C and the APTES SAM completely decomposed at 400 °C. Conversely, BPA SAM on Si shows that the onset of thermal desorption occurs at 350 °C, and the BPA SAM completely desorbed at approximately 500 °C. Our study revealed that the organophosphonate SAM is a more stable SAM in modifying the dielectric sidewalls of a Cu interconnect when compared to organosilane SAM. To overcome the spontaneous reaction of the organophosphonate film on the metal substrate, a simple orthogonal functionalization method using thiolate SAM as a sacrificial layer was also demonstrated in this study.
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Affiliation(s)
- Yu-Wei Chou
- Department of Materials Science
and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
| | - Shou-Yi Chang
- Department of Materials Science
and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
| | - Pei Yuin Keng
- Department of Materials Science
and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
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3
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Pasquali M, Brady-Boyd A, Leśniewska A, Carolan P, Conard T, O'Connor R, De Gendt S, Armini S. Area-Selective Deposition of AlO x and Al-Silicate for Fully Self-Aligned Via Integration. ACS APPLIED MATERIALS & INTERFACES 2023; 15:6079-6091. [PMID: 36649199 DOI: 10.1021/acsami.2c18014] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The rush for better-performing electronics, and manufacturing processes that heavily rely on "top-down" patterning techniques, is making the integration of "self-aligned" fabrication methods, such as area-selective deposition (ASD), a critical objective for continued device scaling. The fully self-aligned via (FSAV) scheme is broadly proposed as a "killer application" to determine whether ASD can shift from an R&D process to high-volume manufacturing. Nevertheless, the lack of a suitable low-κ deposition process has prevented the realization of FSAV by dielectric-on-dielectric ASD. This is primarily due to the high temperature and/or strong oxidizers employed during low-κ dielectric deposition and their unsuitability in the presence of organic masks, such as self-assembled monolayers (SAMs), used to prevent material nucleation during ASD. In this work, AlOx and Al-silicate atomic layer deposition (ALD) processes are studied to provide suitable materials for ASD-enabled FSAV. Dimethylaluminum isopropoxide and H2O are utilized to deposit the metal oxide, whereas Al-silicate is grown by adding 2,2-dimethoxy-1,6-diaza-2-silacyclooctane (DMDAcO) pulses to the AlOx ALD cycle. The selectivity of such processes is demonstrated on 50 nm Cu/SiO2 structures, using octadecanethiol-derived SAMs to inhibit material nucleation on the metal lines. Scanning and transmission electron microscopies are employed to assess the quality of the ASD processes and investigate the mechanisms behind defect generation on a nongrowth surface. X-ray photoelectron spectroscopy measurements show the high purity of the AlOx film, whereas DMDAcO-ligand incorporation into the Al-silicate matrix is observed. Planar capacitor structures are used to assess the electrical properties of both ASD films, revealing that the silicate film exhibits a relatively low κ-value (5.3 ± 0.2), with a high acceleration field factor (32.4 ± 1.4) and a dielectric breakdown voltage of 6.0 ± 0.3 V at 100 °C.
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Affiliation(s)
- Mattia Pasquali
- Department of Chemistry, Faculty of Science, KU Leuven, B-3001Leuven, Belgium
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
| | - Anita Brady-Boyd
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
- School of Physical Sciences, Dublin City University, Glasnevin, DublinDublin 9, Ireland
| | - Alicja Leśniewska
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
| | - Patrick Carolan
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
| | - Thierry Conard
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
| | - Robert O'Connor
- School of Physical Sciences, Dublin City University, Glasnevin, DublinDublin 9, Ireland
| | - Stefan De Gendt
- Department of Chemistry, Faculty of Science, KU Leuven, B-3001Leuven, Belgium
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
| | - Silvia Armini
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
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Wojtecki R, Ma J, Cordova I, Arellano N, Lionti K, Magbitang T, Pattison TG, Zhao X, Delenia E, Lanzillo N, Hess AE, Nathel NF, Bui H, Rettner C, Wallraff G, Naulleau P. Additive Lithography-Organic Monolayer Patterning Coupled with an Area-Selective Deposition. ACS APPLIED MATERIALS & INTERFACES 2021; 13:9081-9090. [PMID: 33471496 DOI: 10.1021/acsami.0c16817] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The combination of area-selective deposition (ASD) with a patternable organic monolayer provides a versatile additive lithography platform, enabling the generation of a variety of nanoscale feature geometries. Stearate hydroxamic acid self-assembled monolayers (SAMs) were patterned with extreme ultraviolet (λ = 13.5 nm) or electron beam irradiation and developed with ASD to achieve line space patterns as small as 50 nm. Density functional theory was employed to aid in the synthesis of hydroxamic acid derivatives with optimized packing density to enhance the imaging contrast and improve dose sensitivity. Near-edge X-ray absorption fine structure spectroscopy and infrared spectroscopy reveal that the imaging mechanism is based on improved deposition inhibition provided by the cross-linking of the SAM to produce a more effective barrier during a subsequent deposition step. With patterned substrates composed of coplanar copper lines and silicon spacers, hydroxamic acids selectively formed monolayers on the metal portions and could undergo a pattern-wise exposure followed by ASD in the first combination of a patternable monolayer with ASD. This material system presents an additional capability compared to traditional ASD approaches that generally reflect a starting patterned surface. Furthermore, this bottoms-up additive approach to lithography may be a viable alternative to subtractive nanoscale feature generation.
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Affiliation(s)
- Rudy Wojtecki
- International Business Machines-Almaden Research Center, 650 Harry Road, San Jose, California 95110, United States
| | - Jonathan Ma
- Center for X-ray Optics, Materials Science Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., Berkeley, California 94720, United States
| | - Isvar Cordova
- Center for X-ray Optics, Materials Science Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., Berkeley, California 94720, United States
| | - Noel Arellano
- International Business Machines-Almaden Research Center, 650 Harry Road, San Jose, California 95110, United States
| | - Krystelle Lionti
- International Business Machines-Almaden Research Center, 650 Harry Road, San Jose, California 95110, United States
| | - Teddie Magbitang
- International Business Machines-Almaden Research Center, 650 Harry Road, San Jose, California 95110, United States
| | - Thomas G Pattison
- Polymer Science Group, Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia
| | - Xiao Zhao
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, California 94720, United States
| | - Eugene Delenia
- International Business Machines-Almaden Research Center, 650 Harry Road, San Jose, California 95110, United States
| | - Nicholas Lanzillo
- International Business Machines-Semiconductor Technology Research, 257 Fuller Road, Albany, New York 12203, United States
| | - Alexander E Hess
- International Business Machines-Almaden Research Center, 650 Harry Road, San Jose, California 95110, United States
| | - Noah Fine Nathel
- International Business Machines-Almaden Research Center, 650 Harry Road, San Jose, California 95110, United States
| | - Holt Bui
- International Business Machines-Almaden Research Center, 650 Harry Road, San Jose, California 95110, United States
| | - Charles Rettner
- International Business Machines-Almaden Research Center, 650 Harry Road, San Jose, California 95110, United States
| | - Gregory Wallraff
- International Business Machines-Almaden Research Center, 650 Harry Road, San Jose, California 95110, United States
| | - Patrick Naulleau
- Center for X-ray Optics, Materials Science Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., Berkeley, California 94720, United States
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Lee S, Baek G, Kim HM, Kim YH, Park JS. Facile rearrangement of molecular layer deposited metalcone thin films by electron beam irradiation for area selective atomic layer deposition. Dalton Trans 2021; 50:9958-9967. [PMID: 34226906 DOI: 10.1039/d1dt01380g] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
Abstract
Area selective atomic layer deposition (AS-ALD) is a promising future technology for the realization of a 5 nm scale Si complementary field effect transistor (FET) and its application in industry. AS-ALD is one of the "bottom-up" technologies, which is a key process that can reduce the cost of fabrication and decrease positional error as an alternative to the conventional "top down" technology. We researched an inhibitor for AS-ALD using molecular layer deposited (MLD) films annealed by electron beam irradiation (EBI). We studied the effect of EBI on an indicone film that was fabricated by using bis(trimethylsilyl)amidodiethyl indium (INCA-1), hydroquinone (HQ), an alucone film fabricated by using trimethylaluminum (TMA) and 4-mercaptophenol (4MP). The EBI effect on MLD films was evaluated by investigating the changes in thickness, composition and structure. In order to observe the selectivity of the annealed indicone film, atomic layer deposition of ZnO was performed on the annealed indicone/silicon line pattern, and it was found that the surface of annealed indicone can inhibit ALD of ZnO for 20 cycles as compared to a Si surface.
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Affiliation(s)
- Seunghwan Lee
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
| | - GeonHo Baek
- Division of Nano-Scale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Hye-Mi Kim
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
| | - Yong-Hwan Kim
- Infovion Inc., 71 Gyeongin-ro, Yeoungdeungpo-gu, Seoul 07286, Republic of Korea
| | - Jin-Seong Park
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea. and Division of Nano-Scale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
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6
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Zheng L, He W, Spampinato V, Franquet A, Sergeant S, Gendt SD, Armini S. Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2020; 36:13144-13154. [PMID: 33104359 DOI: 10.1021/acs.langmuir.0c00741] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Area-selective deposition (ASD) offers tremendous advantages when compared with conventional patterning processes, such as the possibility of achieving three-dimensional features in a bottom-up additive fashion. Recently, ASD is gaining more and more attention from IC manufacturers and equipment and material suppliers. Through combination of self-assembled monolayer (SAM) surface passivation of the nongrowth substrate area and atomic layer deposition (ALD) on the growth area, ASD selective to the growth area can be achieved. With the purpose of screening SAM precursors to provide optimal passivation performance on SiO2, various siloxane precursors with different terminal groups and alkyl chains were investigated. Additionally, the surface dependence and growth inhibition of TiN ALD on -NH2, -CF3, and -CH3 terminations is investigated. We demonstrated the methyl termination of the SAM precursor combined with a C18 alkyl chain plays an important role in broadening the ALD selectivity window by suppressing precursor adsorption. Owing to the high surface coverage, excellent thermal stability and longer carbon chain length, an optimized trimethoxy(octadecyl)silane (TMODS) film deposited from liquid phase was able to provide a selectivity higher than 0.99 up to 20 nm ALD film deposited on hydroxyl-terminated Si oxide. The approach followed in this work can allow extending the ASD process window, and it is relevant for a wide variety of applications.
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Affiliation(s)
- Li Zheng
- Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven, Belgium
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Wei He
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | | | - Alexis Franquet
- Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven, Belgium
| | - Stefanie Sergeant
- Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven, Belgium
| | - Stefan De Gendt
- Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven, Belgium
| | - Silvia Armini
- Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven, Belgium
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7
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Bobb-Semple D, Zeng L, Cordova I, Bergsman DS, Nordlund D, Bent SF. Substrate-Dependent Study of Chain Orientation and Order in Alkylphosphonic Acid Self-Assembled Monolayers for ALD Blocking. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2020; 36:12849-12857. [PMID: 33079543 DOI: 10.1021/acs.langmuir.0c01974] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
For years, many efforts in area selective atomic layer deposition (AS-ALD) have focused on trying to achieve high-quality self-assembled monolayers (SAMs), which have been shown by a number of studies to be effective for blocking deposition. Herein, we show that in some cases where a densely packed SAM is not formed, significant ALD inhibition may still be realized. The formation of octadecylphosphonic acid (ODPA) SAMs was evaluated on four metal substrates: Cu, Co, W, and Ru. The molecular orientation, chain packing, and relative surface coverage were evaluated using near-edge X-ray absorption fine structure (NEXAFS), Fourier transform infrared (FTIR) spectroscopy, and electrochemical impedance spectroscopy (EIS). ODPA SAMs formed on Co, Cu, and W showed strong angular dependence of the NEXAFS signal whereas ODPA on Ru did not, suggesting a disordered layer was formed on Ru. Additionally, EIS and FTIR spectroscopy confirmed that Co and Cu form densely packed, "crystal-like" SAMs whereas Ru and W form less dense monolayers, a surprising result since W-ODPA was previously shown to inhibit the ALD of ZnO and Al2O3 best among all the substrates. This work suggests that multiple factors play a role in SAM-based AS-ALD, not just the SAM quality. Therefore, metrological averaging techniques (e.g., WCA and FTIR spectroscopy) commonly used for evaluating SAMs to predict their suitability for ALD inhibition should be supplemented by more atomically sensitive methods. Finally, it highlights important considerations for describing the mechanism of SAM-based selective ALD.
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Affiliation(s)
- Dara Bobb-Semple
- Department of Chemical Engineering, Stanford University, Stanford, California 94305-5025, United States
| | - Li Zeng
- Department of Chemical Engineering, Stanford University, Stanford, California 94305-5025, United States
| | - Isvar Cordova
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - David S Bergsman
- Department of Material Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Dennis Nordlund
- Stanford Linear Accelerator Center, Menlo Park, California 94025, United States
| | - Stacey F Bent
- Department of Chemical Engineering, Stanford University, Stanford, California 94305-5025, United States
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8
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Lee S, Kim M, Baek G, Kim HM, Van TTN, Gwak D, Heo K, Shong B, Park JS. Thermal Annealing of Molecular Layer-Deposited Indicone Toward Area-Selective Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES 2020; 12:43212-43221. [PMID: 32841556 DOI: 10.1021/acsami.0c10322] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Area-selective atomic layer deposition (AS-ALD) is a promising technique for fine nanoscale patterning, which may overcome the drawbacks of conventional top-down approaches for the fabrication of future electronic devices. However, conventional materials and processes often employed for AS-ALD are inadequate for conformal and rapid processing. We introduce a new strategy for AS-ALD based on molecular layer deposition (MLD) that is compatible with large-scale manufacturing. Conformal thin films of "indicone" (indium alkoxide polymer) are fabricated by MLD using INCA-1 (bis(trimethylsily)amidodiethylindium) and HQ (hydroquinone). Then, the MLD indicone films are annealed by a thermal heat treatment under vacuum. The properties of the indicone thin films with different annealing temperatures were measured with multiple optical, physical, and chemical techniques. Interestingly, a nearly complete removal of indium from the film was observed upon annealing to ca. 450 °C and above. The chemical mechanism of the thermal transformation of the indicone film was investigated by density functional theory calculations. Then, the annealed indicone thin films were applied as an inhibiting layer for the subsequent ALD of ZnO, where the deposition of approximately 20 ALD cycles (equivalent to a thickness of approximately 4 nm) of ZnO was successfully inhibited. Finally, patterns of annealed MLD indicone/Si substrates were created on which the area-selective deposition of ZnO was demonstrated.
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Affiliation(s)
- Seunghwan Lee
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Miso Kim
- Department of Chemical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
| | - GeonHo Baek
- Division of Nano-Scale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Hye-Mi Kim
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Tran Thi Ngoc Van
- Department of Chemical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
| | - Dham Gwak
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
| | - Kwang Heo
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
| | - Bonggeun Shong
- Department of Chemical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
| | - Jin-Seong Park
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
- Division of Nano-Scale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
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9
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Liu TL, Nardi KL, Draeger N, Hausmann DM, Bent SF. Effect of Multilayer versus Monolayer Dodecanethiol on Selectivity and Pattern Integrity in Area-Selective Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES 2020; 12:42226-42235. [PMID: 32805867 DOI: 10.1021/acsami.0c08873] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Monolayer and multilayer dodecanethiols (DDT) can be assembled onto a copper surface from the vapor phase depending on the initial oxidation state of the copper. The ability of the copper-bound dodecanethiolates to block atomic layer deposition (ALD) and the resulting behavior at the interfaces of Cu/SiO2 patterns during area-selective ALD (AS-ALD) are compared between mono- and multilayers. We show that multilayer DDT is ∼7 times more effective at blocking ZnO ALD from diethylzinc and water than is monolayer DDT. Conversely, monolayer DDT exhibits better performance than does multilayer DDT in blocking of Al2O3 ALD from trimethylaluminum and water. Investigation into interfacial effects at the interface between Cu and SiO2 on Cu/SiO2 patterns reveals both a gap at the SiO2 edges and a pitch size-dependent nucleation delay of ZnO ALD on SiO2 regions of multilayer DDT-coated patterns. In contrast, no impact on ZnO ALD is observed on the SiO2 regions of monolayer DDT-coated patterns. We also show that these interfacial effects depend on the ALD chemistry. Whereas an Al2O3 film grows on the TaN diffusion barrier of a DDT-treated Cu/SiO2 pattern, the ZnO film does not. These results indicate that the structure of the DDT layer and the ALD precursor chemistry both play an important role in achieving AS-ALD.
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Affiliation(s)
| | - Katie L Nardi
- Lam Research Corporation, Fremont, California 94538, United States
| | - Nerissa Draeger
- Lam Research Corporation, Fremont, California 94538, United States
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Pattison TG, Hess AE, Arellano N, Lanzillo N, Nguyen S, Bui H, Rettner C, Truong H, Friz A, Topuria T, Fong A, Hughes B, Tek AT, DeSilva A, Miller RD, Qiao GG, Wojtecki RJ. Surface Initiated Polymer Thin Films for the Area Selective Deposition and Etching of Metal Oxides. ACS NANO 2020; 14:4276-4288. [PMID: 32167284 DOI: 10.1021/acsnano.9b09637] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The area selective growth of polymers and their use as inhibiting layers for inorganic film depositions may provide a valuable self-aligned process for fabrication. Polynorbornene (PNB) thin films were grown from surface-bound initiators and show inhibitory properties against the atomic layer deposition (ALD) of ZnO and TiO2. Area selective control of the polymerization was achieved through the synthesis of initiators that incorporate surface-binding ligands, enabling their selective attachment to metal oxide features versus silicon dielectrics, which were then used to initiate surface polymerizations. The subsequent use of these films in an ALD process enabled the area selective deposition (ASD) of up to 39 nm of ZnO. In addition, polymer thickness was found to play a key role, where films that underwent longer polymerization times were more effective at inhibiting higher numbers of ALD cycles. Finally, while the ASD of a TiO2 film was not achieved despite blanket studies showing inhibition, the ALD deposition on polymer regions of a patterned film produced a different quality metal oxide and therefore altered its etch resistance. This property was exploited in the area selective etch of a metal feature. This demonstration of an area selective surface-grown polymer to enable ASD and selective etch has implications for the fabrication of both micro- and nanoscale features and surfaces.
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Affiliation(s)
- Thomas G Pattison
- Polymer Science Group, Department of Chemical Engineering, The University of Melbourne, Parkville, VIC 3010, Australia
| | - Alexander E Hess
- International Business Machines - Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
| | - Noel Arellano
- International Business Machines - Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
| | - Nicholas Lanzillo
- IBM Research at Albany Nanotech, 257 Fuller Road, Albany, New York 12203, United States
| | - Son Nguyen
- International Business Machines - Semiconductor Technology Research, 257 Fuller Road, Albany, New York 12203, United States
| | - Holt Bui
- International Business Machines - Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
| | - Charles Rettner
- International Business Machines - Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
| | - Hoa Truong
- International Business Machines - Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
| | - Alexander Friz
- International Business Machines - Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
| | - Teya Topuria
- International Business Machines - Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
| | - Anthony Fong
- International Business Machines - Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
| | - Brian Hughes
- International Business Machines - Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
| | - Andy T Tek
- International Business Machines - Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
| | - Anuja DeSilva
- International Business Machines - Semiconductor Technology Research, 257 Fuller Road, Albany, New York 12203, United States
| | - Robert D Miller
- International Business Machines - Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
| | - Greg G Qiao
- Polymer Science Group, Department of Chemical Engineering, The University of Melbourne, Parkville, VIC 3010, Australia
| | - Rudy J Wojtecki
- International Business Machines - Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States
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Richey NE, de Paula C, Bent SF. Understanding chemical and physical mechanisms in atomic layer deposition. J Chem Phys 2020; 152:040902. [PMID: 32007080 DOI: 10.1063/1.5133390] [Citation(s) in RCA: 61] [Impact Index Per Article: 15.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022] Open
Abstract
Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the deposition of thin films. However, several physical and chemical phenomena can occur which cause deviation from "ideal" film growth during ALD. Understanding the underlying mechanisms that cause these deviations is important to achieving even better control over the growth of the deposited material. Herein, we review several precursor chemisorption mechanisms and the effect of chemisorption on ALD growth. We then follow with a discussion on diffusion and its impact on film growth during ALD. Together, these two fundamental processes of chemisorption and diffusion underlie the majority of mechanisms which contribute to material growth during a given ALD process, and the recognition of their role allows for more rational design of ALD parameters.
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Affiliation(s)
- Nathaniel E Richey
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
| | - Camila de Paula
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
| | - Stacey F Bent
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
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Zyulkov I, Madhiwala V, Voronina E, Snelgrove M, Bogan J, O'Connor R, De Gendt S, Armini S. Area-Selective ALD of Ru on Nanometer-Scale Cu Lines through Dimerization of Amino-Functionalized Alkoxy Silane Passivation Films. ACS APPLIED MATERIALS & INTERFACES 2020; 12:4678-4688. [PMID: 31913003 DOI: 10.1021/acsami.9b14596] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The selective deposition of materials on predefined areas on a substrate is of crucial importance for various applications, such as energy harvesting, microelectronic device fabrication, and catalysis. A representative example of area-confined deposition is the selective deposition of a metal film as the interconnect material in multilevel metallization schemes for CMOS technology. This allows the formation of multilevel structures with standard lithographical techniques while minimizing pattern misalignment and overlay and improving the uniformity of the structures across the wafer. In this work, area-selective deposition of Ru by atomic layer deposition (ALD) is investigated using alkoxy siloxane dielectric passivation layers. In this work, a comparison of several silane organic SAM precursors in terms of Ru ALD ASD performance is reported. The importance of the surface areal concentration of the passivation molecules is demonstrated. According to the in situ X-ray photoelectron spectroscopy film characterization, the ALD blocking layers derived from a (3-trimethoxysilylpropyl) diethylenetriamine (DETA) precursor have the ability to polymerize under ALD-compatible temperatures, such as 250 °C, which leads to a significant inhibition of Ru growth up to 400 ALD cycles. At the same time, the DETA layer can be selectively removed from the oxidized Cu surface by rinsing in acetic acid, which allows selective deposition of ca. 14 nm of Ru on Cu with no Ru detected on the DETA-coated surface by RBS. The approach is successfully tested on 50 nm half-pitch patterned SiO2/Cu lines.
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Affiliation(s)
- Ivan Zyulkov
- Department of Chemistry, Faculty of Science , KU Leuven , B-3001 Leuven , Belgium
- Imec , Kapeldreef 75 , B-3001 Leuven , Belgium
| | - Viraj Madhiwala
- Faculty of Electrical Engineering and Information Technology , TU Chemnitz , 09107 Chemnitz , Germany
| | - Ekaterina Voronina
- Faculty of Physics , Lomonosov Moscow State University , Leninskie Gory, GSP-1 , Moscow 119991 , Russian Federation
| | | | | | | | - Stefan De Gendt
- Department of Chemistry, Faculty of Science , KU Leuven , B-3001 Leuven , Belgium
- Imec , Kapeldreef 75 , B-3001 Leuven , Belgium
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