In Situ Optical Tracking of Electroablation in Two-Dimensional Transition-Metal Dichalcogenides

An In Situ Reflectance Spectroscopic Investigation to Monitor Two-Dimensional MoS2 Flakes on a Sapphire Substrate

In this work, we demonstrate the application of differential reflectance spectroscopy (DRS) to monitor the growth of molybdenum disulfide (MoS₂) using chemical vapor deposition (CVD). The growth process, optical properties, and structure evolution of MoS₂ were recorded by in-situ DRS. Indeed, blue shifts of the characteristic peak B were discussed with the decrease of temperature. We also obtained the imaginary part of the MoS₂ dielectric constant according to reflectance spectra. This method provides an approach for studying the change of two-dimensional (2D) materials’ dielectric constant with temperature. More importantly, our work emphasizes that the DRS technique is a non-destructive and effective method for in-situ monitoring the growth of 2D materials, which is helpful in guiding the preparation of 2D materials.

Investigating the Redox Properties of Two-Dimensional MoS2 Using Photoluminescence Spectroelectrochemistry and Scanning Electrochemical Cell Microscopy

Control over photophysical and chemical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs) is the key to advance their applications in next-generation optoelectronics. Although chemical doping and surface modification with plasmonic metals have been reported to tune the photophysical and catalytic properties of 2D TMDs, there have been few reports of tuning optical properties using dynamic electrochemical control of electrode potential. Herein, we report (1) the photoluminescence (PL) enhancement and red-shift in the PL spectrum of 2D MoS₂, synthesized by chemical vapor deposition and subsequent transfer onto an indium tin oxide electrode, upon electrochemical anodization and (2) spatial heterogeneities in its photoelectrochemical (PEC) activities. Spectroelectrochemistry shows that positive electrochemical bias causes an initial ten-fold increase in the PL intensity followed by a quick decrease in the enhancement. The PL enhancement and spectrum red-shift are associated with the decrease in nonradiative decay rates of excitons formed upon electrochemical anodization of 2D MoS₂. Additionally, scanning electrochemical cell microscopy (SECCM) study shows that the 2D MoS₂ crystal is spatially sensitive to PEC oxidation at positive potentials. SECCM also shows a photocurrent increase caused by spatially heterogeneous edge-type defect sites of the crystal.

Low Contact Barrier in 2H/1T' MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition

Metal-semiconductor contact has been a critical topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. In this study, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe₂) planarly contacted by its metallic phase (1T' MoTe₂). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe₂ films, including pure 2H phase or 1T' phase, and 2H/1T' in-plane heterostructure. Theoretical simulation shows a lower Schottky barrier in 2H/1T' junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal-semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.