1
|
Zhang L, Wang Y, Chu A, Zhang Z, Liu M, Shen X, Li B, Li X, Yi C, Song R, Liu Y, Zhuang X, Duan X. Facet-selective growth of halide perovskite/2D semiconductor van der Waals heterostructures for improved optical gain and lasing. Nat Commun 2024; 15:5484. [PMID: 38942769 PMCID: PMC11213932 DOI: 10.1038/s41467-024-49364-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2024] [Accepted: 06/03/2024] [Indexed: 06/30/2024] Open
Abstract
The tunable properties of halide perovskite/two dimensional (2D) semiconductor mixed-dimensional van der Waals heterostructures offer high flexibility for innovating optoelectronic and photonic devices. However, the general and robust growth of high-quality monocrystalline halide perovskite/2D semiconductor heterostructures with attractive optical properties has remained challenging. Here, we demonstrate a universal van der Waals heteroepitaxy strategy to synthesize a library of facet-specific single-crystalline halide perovskite/2D semiconductor (multi)heterostructures. The obtained heterostructures can be broadly tailored by selecting the coupling layer of interest, and can include perovskites varying from all-inorganic to organic-inorganic hybrid counterparts, individual transition metal dichalcogenides or 2D heterojunctions. The CsPbI2Br/WSe2 heterostructures demonstrate ultrahigh optical gain coefficient, reduced gain threshold and prolonged gain lifetime, which are attributed to the reduced energetic disorder. Accordingly, the self-organized halide perovskite/2D semiconductor heterostructure lasers show highly reproducible single-mode lasing with largely reduced lasing threshold and improved stability. Our findings provide a high-quality and versatile material platform for probing unique optoelectronic and photonic physics and developing further electrically driven on-chip lasers, nanophotonic devices and electronic-photonic integrated systems.
Collapse
Affiliation(s)
- Liqiang Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Anshi Chu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan, P. R. China
| | - Miaomiao Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xiaohua Shen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xu Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Chen Yi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Rong Song
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Yingying Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xiujuan Zhuang
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, Hunan, P. R. China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China.
| |
Collapse
|
2
|
Wang Z, Lyu M, Zhang BW, Xiao M, Zhang C, Han EQ, Wang L. Thermally Evaporated Metal Halide Perovskites and Their Analogues: Film Fabrication, Applications and Beyond. SMALL METHODS 2024:e2301633. [PMID: 38682581 DOI: 10.1002/smtd.202301633] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2023] [Revised: 04/06/2024] [Indexed: 05/01/2024]
Abstract
Metal halide perovskites emerge as promising semiconductors for optoelectronic devices due to ease of fabrication, attractive photophysical properties, their low cost, highly tunable material properties, and high performance. High-quality thin films of metal halide perovskites are the basis of most of these applications including solar cells, light-emitting diodes, photodetectors, and electronic memristors. A typical fabrication method for perovskite thin films is the solution method, which has several limitations in device reproducibility, adverse environmental impact, and utilization of raw materials. Thermal evaporation holds great promise in addressing these bottlenecks in fabricating high-quality halide perovskite thin films. It also has high compatibility with mass-production platforms that are well-established in industries. This review first introduces the basics of the thermal evaporation method with a particular focus on the critical parameters influencing the thin film deposition. The research progress of the fabrication of metal halide perovskite thin films is further summarized by different thermal evaporation approaches and their applications in solar cells and other optoelectronic devices. Finally, research challenges and future opportunities for both fundamental research and commercialization are discussed.
Collapse
Affiliation(s)
- Zitong Wang
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Miaoqiang Lyu
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Bo Wei Zhang
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Mu Xiao
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Chengxi Zhang
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - E Q Han
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Lianzhou Wang
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| |
Collapse
|
3
|
Huang S, Shen Z, Liao Y, Liu Z, Hu Z, Li Q, Zhang Z, Dong S, Luo J, Du J, Tang J, Leng Y. Water-Resistant Subwavelength Perovskite Lasing from Transparent Silica-Based Nanocavity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306102. [PMID: 37669761 DOI: 10.1002/adma.202306102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2023] [Revised: 08/05/2023] [Indexed: 09/07/2023]
Abstract
Great research efforts are devoted to exploring the miniaturization of chip-scale coherent light sources possessing excellent lasing performance. Despite the indispensable role in Si photonics, SiO2 is generally considered not contributing to the starting up and operation of integrated lasers. Here, this work demonstrates an extraordinary-performance subwavelength-scale perovskite vertical cavity laser with all-transparent SiO2 cavity, whose cavity is ultra-simple and composed of only two parallel SiO2 plates. By introducing a ligand-assisted thermally co-evaporation strategy, highly luminescent perovskite film with high reproducibility and excellent optical gain is grown directly on SiO2 . Benefitting from their high-refractive-index contrast, low-threshold, high-quality factor, and single-mode lasing is achieved in subwavelength range of ≈120 nm, and verified by long-range coherence distance (115.6 µm) and high linear polarization degree (82%). More importantly, the subwavelength perovskite laser device could operate in water for 20 days without any observable degradation, exhibiting ultra-stable water-resistant performance. These findings would provide a simple but robust and reliable strategy for the miniaturized on-chip lasers compatible with Si photonics.
Collapse
Affiliation(s)
- Sihao Huang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zixi Shen
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yang Liao
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Zhengzheng Liu
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhiping Hu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Qian Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Zeyu Zhang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Siyu Dong
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiajun Luo
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Juan Du
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuxin Leng
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
4
|
Zhou Y, Hu Y, Zhang W, Liu C. Amplified spontaneous emission from inclusions containing cesium lead bromide in glasses. OPTICS EXPRESS 2023; 31:27192-27202. [PMID: 37710799 DOI: 10.1364/oe.495694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2023] [Accepted: 07/17/2023] [Indexed: 09/16/2023]
Abstract
Cesium lead halide (CsPbX3, X = Cl, Br and I) perovskite nanocrystals embedded glasses exhibit good optical properties and have potential as gain media. However, origins of the amplified spontaneous emission (ASE) from CsPbX3 nanocrystals are controversial. Here, it is found that ASE is from CsPbX3 nanocrystals in inclusions instead of CsPbX3 nanocrystals dispersed in the glass matrix. Inclusions with various sizes are capable of generating ASE, and ASE of the inclusions can sustain at energy densities as high as several tens of mJ/cm2. Thresholds of the fs laser energy densities increase with the increase in fs laser wavelength, and high net optical gain coefficient is obtained.
Collapse
|
5
|
Gao X, Lin J, Guo X, He G, Zou D, Ishii T, Zhang D, Zhao C, Zhan H, Huang JS, Liu X, Adachi C, Qin C, Wang L. Room-Temperature Continuous-Wave Microcavity Lasers from Solution-Processed Smooth Quasi-2D Perovskite Films with Low Thresholds. J Phys Chem Lett 2023; 14:2493-2500. [PMID: 36867762 DOI: 10.1021/acs.jpclett.3c00279] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Continuous-wave (CW) lasing in quasi-two-dimensional (2D) perovskite-based distributed feedback cavities has been achieved at room temperature; however, CW microcavity lasers comprising distributed Bragg reflectors (DBRs) have rarely been prepared using solution-processed quasi-2D perovskite films because the roughness of perovskite films significantly increases intersurface scattering loss in the microcavity. Herein, high-quality spin-coated quasi-2D perovskite gain films were prepared using an antisolvent to reduce roughness. The highly reflective top DBR mirrors were deposited via room-temperature e-beam evaporation to protect the perovskite gain layer. Lasing emission of the prepared quasi-2D perovskite microcavity lasers under CW optical pumping was clearly observed at room temperature, featuring a low threshold of ∼1.4 W cm-2 and beam divergence of ∼3.5°. It was concluded that these lasers originated from weakly coupled excitons. These results elucidate the importance of controlling the roughness of quasi-2D films to achieve CW lasing, thus facilitating the design of electrically pumped perovskite microcavity lasers.
Collapse
Affiliation(s)
- Xiang Gao
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China
| | - Jie Lin
- Oxford Suzhou Centre for Advanced Research (OSCAR), University of Oxford, Suzhou 215123, P. R. China
| | - Xiaoyang Guo
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, P. R. China
| | - Geng He
- Oxford Suzhou Centre for Advanced Research (OSCAR), University of Oxford, Suzhou 215123, P. R. China
| | - Deyue Zou
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, P. R. China
| | - Tomohiro Ishii
- Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan
| | - Dezhong Zhang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China
| | - Chenyang Zhao
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China
| | - Hongmei Zhan
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China
| | - Jing Song Huang
- Oxford Suzhou Centre for Advanced Research (OSCAR), University of Oxford, Suzhou 215123, P. R. China
| | - Xingyuan Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, P. R. China
| | - Chihaya Adachi
- Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan
| | - Chuanjiang Qin
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China
| | - Lixiang Wang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China
| |
Collapse
|
6
|
Huang C, Chen Y, Wang XL, Zhu B, Liu WJ, Ding SJ, Wu X. Flexible Microspectrometers Based on Printed Perovskite Pixels with Graded Bandgaps. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7129-7136. [PMID: 36710447 DOI: 10.1021/acsami.2c20752] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Miniaturized spectrometers have attracted much attention due to their capability to detect spectral information within a small size. However, such technology still faces challenges including large-scale preparation and performance repeatability. In this work, we overcome these challenges by demonstrating a microspectrometer constructed with a series of pixelized graded-bandgap perovskite photodetectors fabricated with inkjet printing. High-quality perovskite films with minimal pinholes and large grains are deposited by optimizing printing conditions including substrate temperature and surface modification. The resulting perovskite photodetectors show decent photosensing performance, and the different photodetectors based on perovskite films with different bandgaps exhibit various spectral responsivities with different cutoff wavelength edges. Microspectrometers are then constructed with the array of the pixelized graded-bandgap perovskite photodetectors, and incident spectra are algorithmically reconstructed by combining their output currents. The reconstruction performance of the miniaturized spectrometer is evaluated by comparing the results to the spectral curve measured with a commercial bulky spectrometer, indicating a reliable spectral reconstruction with a resolution of around 10 nm. More significantly, the miniaturized spectrometers are successfully fabricated on polymer substrates, and they demonstrate excellent mechanical flexibility. Therefore, this work provides a flexible miniaturized spectrometer with large-scale fabricability, which is promising for emerging applications including wearable devices, hyperspectral imaging, and internet of things.
Collapse
Affiliation(s)
- Chunming Huang
- School of Microelectronics, Fudan University, Shanghai200433, China
| | - Yantao Chen
- School of Microelectronics, Fudan University, Shanghai200433, China
| | - Xiao-Lin Wang
- School of Microelectronics, Fudan University, Shanghai200433, China
| | - Bao Zhu
- School of Microelectronics, Fudan University, Shanghai200433, China
| | - Wen-Jun Liu
- School of Microelectronics, Fudan University, Shanghai200433, China
| | - Shi-Jin Ding
- School of Microelectronics, Fudan University, Shanghai200433, China
- Jiashan Fudan Institute, Jiaxing, Zhejiang Province314100, China
| | - Xiaohan Wu
- School of Microelectronics, Fudan University, Shanghai200433, China
- Hubei Yangtze Memory Laboratories, Wuhan430205, China
| |
Collapse
|
7
|
Lin WH, Pan SC, Hsu JF, Tseng ZL, Jyu SS, Lin JH. Investigation of Two Photon Absorption of Ligand-Modified CsPbBr 3 Quantum Dots. J Phys Chem Lett 2022; 13:11245-11252. [PMID: 36448820 DOI: 10.1021/acs.jpclett.2c02615] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The characteristics and application of nonlinear absorption from CsPbBr3 QDs film with the ligand-modified strategy have been investigated in this work. By means of a near-infrared fs Ti:sapphire laser as a light source, the up-conversion emission of CsPbBr3 QDs film of around 518 nm revealed a quadratic increase with the pump intensity. Through the temperature-dependent up-conversion emission, we obtained the binding energy and longitudinal optical (LO) phonon energy of CsPbBr3 QDs film of around 58.1 and 61.2 meV, respectively. Due to more active thermal coupling between the excited electron or hot phonon effect, the photon decay trace under two-photon excitation was prolonged at higher temperatures. The ligand-modified CsPbBr3 QDs film exhibits a relatively large TPA coefficient of around 28.6 cm/GW by the open aperture Z-scan measurement, and it has been demonstrated as a promising nonlinear medium to obtain the pulsewidth of ultrafast lasers.
Collapse
Affiliation(s)
- Wan-Hsuan Lin
- Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei10608, Taiwan
| | - Shao-Chien Pan
- Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei10608, Taiwan
| | - Jen-Feng Hsu
- Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei10608, Taiwan
| | - Zong-Liang Tseng
- Organic Electronics Research Center and Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City243303, Taiwan
| | - Siao-Shan Jyu
- Taiwan O-Film Technology Company Limited, New Taipei City22101, Taiwan
| | - Ja-Hon Lin
- Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei10608, Taiwan
| |
Collapse
|
8
|
Tian H, Jiang X, Li T, Yan M, Xu L, Lu G, Zhang Y, Zhu H, He H, Yang D, Fang Y. Vacuum-Vapor-Deposited 0D/3D All-Inorganic Perovskite Composite Films toward Low-Threshold Amplified Spontaneous Emission and Lasing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204752. [PMID: 36156416 DOI: 10.1002/smll.202204752] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Revised: 09/10/2022] [Indexed: 06/16/2023]
Abstract
Vacuum vapor deposition (VVD) is a promising way to advancing the commercialization of perovskite light sources owing to its convenience for wafer-scale mass production and compatibility with silicon photonics manufacturing infrastructure. However, the light emission performance of VVD-grown perovskites still lags far behind that of the conventional solution-processed counterparts due to their inferior luminescence properties. Here, a 0D/3D cesium-lead-bromide perovskite composite film is prepared on Si/SiO2 substrates through composition modulation with the VVD method, which exhibits an ultralow amplified spontaneous emission (ASE) threshold down to 14.3 µJ cm-2 in the optimal films, which is on par with that of the solution-processed counterparts. Meanwhile, they also display intriguing operational stability with negligible emission intensity decay under continuous excitation above ASE threshold for 4 h in the air. The outstanding ASE performance mainly originates from the reduced trap density and weakened electron-phonon coupling in the 3D CsPbBr3 phase enabled by the incorporation of the 0D Cs4 PbBr6 phase. Finally, by integrating the composite film with the distributed feedback (DFB) cavity, DFB lasing is achieved with a low threshold of 18.2 µJ cm-2 under nanosecond-pulsed laser pumping, which highlights the potential of VVD-processed perovskites for developing high-performance lasers.
Collapse
Affiliation(s)
- Hongjun Tian
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Xinyi Jiang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Tianjing Li
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Minxing Yan
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Li Xu
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Guochao Lu
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yao Zhang
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Haiming Zhu
- State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Haiping He
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Deren Yang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yanjun Fang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| |
Collapse
|
9
|
Ghaithan HM, Qaid SMH, AlHarbi KK, Bin Ajaj AF, Al-Asbahi BA, Aldwayyan AS. Amplified Spontaneous Emission from Thermally Evaporated High-Quality Thin Films of CsPb(Br 1-xY x) 3 (Y = I, Cl) Perovskites. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:8607-8613. [PMID: 35777070 DOI: 10.1021/acs.langmuir.2c00861] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
As a wavelength-tunable lasing material, perovskites are now generating a lot of scientific attention. Conventional solution-processed CsPbX3 perovskite films sometimes suffer unavoidable pinhole defects and poor surface morphology, severely limiting their performance on amplified spontaneous emission (ASE) and lasing application. Herein, a thermal evaporation approach is explored in our work to achieve a uniform and high-coverage CsPb(Br1-xYx)3 (Y = I, Cl) perovskites polycrystalline thin film. The ASE of these films was studied using a picosecond laser system. The ASE profile increases rapidly over the narrow peak in relation to the laser pump intensity, confirming the development of stimulated emission. ASE began when the energy density threshold was reached and ranged between 25 and 170 μJ/cm2 per pulse for perovskite materials when replacing I with Br and then Cl. This work emphasizes the notable optical properties of high-quality perovskite thin films, leading to possible accessible uses in optoelectronic applications.
Collapse
Affiliation(s)
- Hamid M Ghaithan
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Saif M H Qaid
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
- Department of Physics, Faculty of Science, Ibb University, Ibb 70270, Yemen
| | - Khulod K AlHarbi
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Abrar F Bin Ajaj
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Bandar Ali Al-Asbahi
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
- Department of Physics, Faculty of Science, Sana'a University, Sana'a 12544, Yemen
| | - Abdullah S Aldwayyan
- Physics and Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
- K. A. CARE Energy Research and Innovation Center, King Saud University, Riyadh 11451, Saudi Arabia
| |
Collapse
|
10
|
Yang CY, Jian LY, Lee YT, Tseng ZL, Lin JH. Amplified spontaneous emission from all-inorganic perovskite on a flexible substrate with silk fibroin. Sci Rep 2022; 12:10102. [PMID: 35710555 PMCID: PMC9203528 DOI: 10.1038/s41598-022-12313-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2022] [Accepted: 04/27/2022] [Indexed: 11/25/2022] Open
Abstract
Stretchable microcavity lasers reveal potential application in flexible displays, biomedicine, and wearable devices in the near future. In this work, we investigated the characteristic of amplified spontaneous emission (ASE) from all inorganic CsPbBr3 QDs on a flexible PET substrate with the assistance of biocompatible silk fibroin (SF) film. In comparison with the sample on PET directly, the ASE of all-inorganic perovskite film revealed a lower threshold of 32.7 μJ/cm2, higher slope efficiency, and a larger gain coefficient of around 100.0 cm−1 owing to the better stack and good arrangement of the CsPbBr3 QDs on top of the SF film. For the temperature-dependent ASE measurement, the larger characteristic temperature of around 277 K is obtained from CsPbBr3 QD/SF film, and the emission peak reveals a slight shift with temperature variation, which indicates its temperature-insensitive property. As the curvature of flexible substrate increases under the mechanical bending, the lasing threshold of CsPbBr3 QD/SF film was reduced along with the increase in slope efficiency owing to the enhancement in the index guiding effect.
Collapse
Affiliation(s)
- Chin-Yi Yang
- Department of Dermatology, Chang Gung Memorial Hospital, Linkou Branch, Taoyuan, Taiwan.,Department of Dermatology, New Taipei Municipal TuCheng Hospital, New Taipei City, Taiwan
| | - Liang-Yu Jian
- Department of Electro-optical Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Yi-Ting Lee
- Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, Fukuoka, 819-0395, Japan
| | - Zong-Liang Tseng
- Department of Electronic Engineering and Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City, 243303, Taiwan.
| | - Ja-Hon Lin
- Department of Electro-optical Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan.
| |
Collapse
|
11
|
Du W, Wu X, Zhang S, Sui X, Jiang C, Zhu Z, Shang Q, Shi J, Yue S, Zhang Q, Zhang J, Liu X. All Optical Switching through Anistropic Gain of CsPbBr 3 Single Crystal Microplatelet. NANO LETTERS 2022; 22:4049-4057. [PMID: 35522976 DOI: 10.1021/acs.nanolett.2c00712] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Perovskite micro/nanostructures have recently emerged as a highly attractive gain material for nanolasers. To explore their applications and further improve performance, it is essential to understand the optical gain and the anisotropic properties. Herein, we obtained high quality CsPbBr3 microplatelets (MP) with anisotropic orthorhombic phase. Optical gain of CsPbBr3 single crystal MP was investigated via microscale variable stripe-length measurement. A polarization-dependent optical gain was observed, and the gain along [002] was larger than that of [1-10]. The behavior was attributed to the lowest energy transition dipole moment of [002] induced by the smaller deviation of Br-Pb-Br bond from the perfect lattice. Along the [002] direction, we obtained the optical gain value up to 5077 cm-1, which is the record value ever reported. Moreover, all optical switching of lasing is realized by periodical polarized excitation. Our results provide new perceptions in the design of novel functional anisotropic devices based on perovskite micro/nanostructures.
Collapse
Affiliation(s)
- Wenna Du
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xianxin Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shuai Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinyu Sui
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chuanxiu Jiang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhuoya Zhu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiuyu Shang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shuai Yue
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qing Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, & Center of Materials Science and Optoelectronics Engineering, Chinese Academy of Sciences, Beijing 100083, China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Dalian National Laboratory for Clean Energy, Dalian 116023, China
| |
Collapse
|
12
|
Li CT, Lee KL, Wang SF, Chen LC. Effect of a Rubidium Chloride Carrier Confinement Layer on the Characteristics of CsPbBr 3 Perovskite Light-Emitting Diodes. NANOSCALE RESEARCH LETTERS 2022; 17:2. [PMID: 34978612 PMCID: PMC8724480 DOI: 10.1186/s11671-021-03641-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2021] [Accepted: 12/16/2021] [Indexed: 06/14/2023]
Abstract
This work describes the effect of a rubidium chloride (RbCl) interlayer in CsPbBr3 perovskite light-emitting diode (LED) structures. RbCl crystallites exhibited polyhedral structures and lattice parameters similar to those of CsPbBr3 perovskite crystallites. The lattice mismatch between the RbCl interlayer and CsPbBr3 active layer was only approximately 2%. The devices exhibited the best quality and performance when RbCl was used as the nucleation and carrier confinement layer. The crystallite sizes of CsPbBr3 with 0.2-, 0.5-, and 1-nm-thick RbCl bottom layers were 55.1, 65.4, and 55.1 nm, respectively. The full width at half maximum (FWHM) of the photoluminescence (PL) emission peak for CsPbBr3 with the RbCl bottom layer was 0.096 eV.
Collapse
Affiliation(s)
- Chi-Ta Li
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei, 106 Taiwan
| | - Kuan-Lin Lee
- Department of Electro-optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei, 106 Taiwan
| | - Sea-Fue Wang
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei, 106 Taiwan
| | - Lung-Chien Chen
- Department of Electro-optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei, 106 Taiwan
| |
Collapse
|
13
|
Cesaria M, Mazzeo M, Quarta G, Aziz MR, Nobile C, Carallo S, Martino M, Calcagnile L, Caricato AP. Pulsed Laser Deposition of CsPbBr 3 Films: Impact of the Composition of the Target and Mass Distribution in the Plasma Plume. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:3210. [PMID: 34947561 PMCID: PMC8708087 DOI: 10.3390/nano11123210] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/23/2021] [Revised: 11/19/2021] [Accepted: 11/20/2021] [Indexed: 11/18/2022]
Abstract
All-inorganic cesium lead bromine (CsPbBr3) perovskites have gained a tremendous potential in optoelectronics due to interesting photophysical properties and much better stability than the hybrid counterparts. Although pulsed laser deposition (PLD) is a promising alternative to solvent-based and/or thermal deposition approaches due to its versatility in depositing multi-elemental materials, deep understanding of the implications of both target composition and PLD mechanisms on the properties of CsPbBr3 films is still missing. In this paper, we deal with thermally assisted preparation of mechano-chemically synthesized CsPbBr3 ablation targets to grow CsPbBr3 films by PLD at the fluence 2 J/cm2. We study both Cs rich- and stoichiometric PbBr2-CsBr mixture-based ablation targets and point out compositional deviations of the associated films resulting from the mass distribution of the PLD-generated plasma plume. Contrary to the conventional meaning that PLD guarantees congruent elemental transfer from the target to the substrate, our study demonstrates cation off-stoichiometry of PLD-grown CsPbBr3 films depending on composition and thermal treatment of the ablation target. The implications of the observed enrichment in the heavier element (Pb) and deficiency in the lighter element (Br) of the PLD-grown films are discussed in terms of optical response and with the perspective of providing operative guidelines and future PLD-deposition strategies of inorganic perovskites.
Collapse
Affiliation(s)
- Maura Cesaria
- Department of Mathematics and Physics “Ennio De Giorgi”, University of Salento, 73100 Lecce, Italy; (M.M.); (M.R.A.); (M.M.); (A.P.C.)
| | - Marco Mazzeo
- Department of Mathematics and Physics “Ennio De Giorgi”, University of Salento, 73100 Lecce, Italy; (M.M.); (M.R.A.); (M.M.); (A.P.C.)
- CNR NANOTEC-Institute of Nanotechnology, c/o Campus Ecotekne, via Monteroni, 73100 Lecce, Italy; (C.N.); (S.C.)
| | - Gianluca Quarta
- National Institute of Nuclear Physics (INFN), 73100 Lecce, Italy; (G.Q.); (L.C.)
- CEDAD (Center of Applied Physics, Dating and Diagnostics), University of Salento-Cittadella della Ricerca SS.7, Km 7300, 72100 Brindisi, Italy
| | - Muhammad Rizwan Aziz
- Department of Mathematics and Physics “Ennio De Giorgi”, University of Salento, 73100 Lecce, Italy; (M.M.); (M.R.A.); (M.M.); (A.P.C.)
| | - Concetta Nobile
- CNR NANOTEC-Institute of Nanotechnology, c/o Campus Ecotekne, via Monteroni, 73100 Lecce, Italy; (C.N.); (S.C.)
| | - Sonia Carallo
- CNR NANOTEC-Institute of Nanotechnology, c/o Campus Ecotekne, via Monteroni, 73100 Lecce, Italy; (C.N.); (S.C.)
| | - Maurizio Martino
- Department of Mathematics and Physics “Ennio De Giorgi”, University of Salento, 73100 Lecce, Italy; (M.M.); (M.R.A.); (M.M.); (A.P.C.)
| | - Lucio Calcagnile
- National Institute of Nuclear Physics (INFN), 73100 Lecce, Italy; (G.Q.); (L.C.)
- CEDAD (Center of Applied Physics, Dating and Diagnostics), University of Salento-Cittadella della Ricerca SS.7, Km 7300, 72100 Brindisi, Italy
| | - Anna Paola Caricato
- Department of Mathematics and Physics “Ennio De Giorgi”, University of Salento, 73100 Lecce, Italy; (M.M.); (M.R.A.); (M.M.); (A.P.C.)
- National Institute of Nuclear Physics (INFN), 73100 Lecce, Italy; (G.Q.); (L.C.)
| |
Collapse
|
14
|
Zhou C, M. Pina J, Zhu T, H. Parmar D, Chang H, Yu J, Yuan F, Bappi G, Hou Y, Zheng X, Abed J, Chen H, Zhang J, Gao Y, Chen B, Wang Y, Chen H, Zhang T, Hoogland S, Saidaminov MI, Sun L, Bakr OM, Dong H, Zhang L, H. Sargent E. Quantum Dot Self-Assembly Enables Low-Threshold Lasing. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2101125. [PMID: 34449133 PMCID: PMC8529423 DOI: 10.1002/advs.202101125] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2021] [Revised: 06/23/2021] [Indexed: 05/19/2023]
Abstract
Perovskite quantum dots (QDs) are of interest for solution-processed lasers; however, their short Auger lifetime has limited lasing operation principally to the femtosecond temporal regime the photoexcitation levels to achieve optical gain threshold are up to two orders of magnitude higher in the nanosecond regime than in the femtosecond. Here the authors report QD superlattices in which the gain medium facilitates excitonic delocalization to decrease Auger recombination and in which the macroscopic dimensions of the structures provide the optical feedback required for lasing. The authors develope a self-assembly strategy that relies on sodiumd-an assembly director that passivates the surface of the QDs and induces self-assembly to form ordered three-dimensional cubic structures. A density functional theory model that accounts for the attraction forces between QDs allows to explain self-assembly and superlattice formation. Compared to conventional organic-ligand-passivated QDs, sodium enables higher attractive forces, ultimately leading to the formation of micron-length scale structures and the optical faceting required for feedback. Simultaneously, the decreased inter-dot distance enabled by the new ligand enhances exciton delocalization among QDs, as demonstrated by the dynamically red-shifted photoluminescence. These structures function as the lasing cavity and the gain medium, enabling nanosecond-sustained lasing with a threshold of 25 µJ cm-2 .
Collapse
Affiliation(s)
- Chun Zhou
- Key Laboratory of Materials for High‐Power LaserShanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai201800China
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
- University of Chinese Academy of SciencesNo.19(A) Yuquan Road, Shijingshan DistrictBeijing100049China
| | - Joao M. Pina
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Tong Zhu
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Darshan H. Parmar
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Hao Chang
- Key Laboratory of Materials for High‐Power LaserShanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai201800China
- University of Chinese Academy of SciencesNo.19(A) Yuquan Road, Shijingshan DistrictBeijing100049China
| | - Jie Yu
- Key Laboratory of Materials for High‐Power LaserShanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai201800China
- University of Chinese Academy of SciencesNo.19(A) Yuquan Road, Shijingshan DistrictBeijing100049China
| | - Fanglong Yuan
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Golam Bappi
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Yi Hou
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Xiaopeng Zheng
- Division of Physical Sciences and Engineering (PSE)King Abdullah University of Science and Technology (KAUST)Thuwal23955‐6900Kingdom of Saudi Arabia
| | - Jehad Abed
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Hao Chen
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Jian Zhang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Yuan Gao
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Bin Chen
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Ya‐Kun Wang
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Haijie Chen
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Tianju Zhang
- Key Laboratory of Materials for High‐Power LaserShanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai201800China
| | - Sjoerd Hoogland
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Makhsud I. Saidaminov
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
- Department of Chemistry and Electrical & Computer EngineeringCentre for Advanced Materials and Related Technologies (CAMTEC)University of VictoriaVictoriaBritish ColumbiaV8P 5C2Canada
| | - Liaoxin Sun
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Osman M. Bakr
- Division of Physical Sciences and Engineering (PSE)King Abdullah University of Science and Technology (KAUST)Thuwal23955‐6900Kingdom of Saudi Arabia
| | - Hongxing Dong
- Key Laboratory of Materials for High‐Power LaserShanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai201800China
| | - Long Zhang
- Key Laboratory of Materials for High‐Power LaserShanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai201800China
| | - Edward H. Sargent
- The Edward S. Rogers Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| |
Collapse
|
15
|
Zhang L, Yuan F, Jiao B, Dong H, Li J, Wu Z. Exploiting a Multiphase Pure Formamidinium Lead Perovskite for Efficient Green-Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2021; 13:23067-23073. [PMID: 33970596 DOI: 10.1021/acsami.1c00116] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Formamidinium (FA)-based perovskites have demonstrated excellent advances in optoelectronics recently, but in terms of perovskite compounds, the optimal condition of their composition optimization remains controversial. Herein, we boosted the performance of perovskite light-emitting diodes (PeLEDs) in both efficiency and stability through composition and phase engineering. The low-dimensional FA2PbBr4 particles emerged and mixed with the FAPbBr3 composites when the FABr content is excessive. By regulating the phase composition in multiphase FAPbBr3 perovskites, the maximum external quantum efficiency (EQEmax) of optimal PeLEDs (5.14%) is 2.7-fold higher than that of pure FAPbBr3-based PeLEDs (1.90%), and device stability is improved. Further optimizing the film quality and emission efficiency with Rb+ ions, the EQEmax of PeLEDs can be increased to 6.01%, with a half-lifetime of about 185 s under the high current density. This strategy of phase composition optimization in FA-based perovskites provides an effective way to process high-efficiency and stable PeLEDs.
Collapse
Affiliation(s)
- Lin Zhang
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Fang Yuan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Bo Jiao
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hua Dong
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jingrui Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhaoxin Wu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| |
Collapse
|
16
|
Ji Y, Wang M, Yang Z, Qiu H, Padhiar MA, Zhou Y, Wang H, Dang J, Gaponenko NV, Bhatti AS. Trioctylphosphine-Assisted Pre-protection Low-Temperature Solvothermal Synthesis of Highly Stable CsPbBr 3/TiO 2 Nanocomposites. J Phys Chem Lett 2021; 12:3786-3794. [PMID: 33847498 DOI: 10.1021/acs.jpclett.1c00693] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Lead halide perovskite quantum dots (PQDs) are reported as a promising branch of perovskites, which have recently emerged as a field in luminescent materials research. However, before the practical applications of PQDs can be realized, the problem of poor stability has not yet been solved. Herein, we propose a trioctylphosphine (TOP)-assisted pre-protection low-temperature solvothermal synthesis of highly stable CsPbBr3/TiO2 nanocomposites. Due to the protection of branched ligands and the lower temperature of shell formation, these TOP-modified CsPbBr3 PQDs are successfully incorporated into a TiO2 monolith without a loss of fluorescence intensity. Because the excellent nature of both parent materials is preserved in CsPbBr3/TiO2 nanocomposites, it is found that the as-prepared CsPbBr3/TiO2 nanocomposites not only display excellent photocatalytic activity but also yield improved PL stability, enabling us to build highly stable white light-emitting diodes and to photodegrade rhodamine B.
Collapse
Affiliation(s)
- Yongqiang Ji
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Minqiang Wang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhi Yang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hengwei Qiu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
- Department of Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology, Tsinghua University, Beijing 100084, China
| | - Muhammad Amin Padhiar
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yun Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hui Wang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jialin Dang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Nikolai V Gaponenko
- Belarusian State University of Informatics and Radioelectronics, P. Browki St.6, 220013 Minsk, Belarus
| | - Arshad Saleem Bhatti
- Centre for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Islamabad 44500, Pakistan
| |
Collapse
|
17
|
Crystal Engineering Approach for Fabrication of Inverted Perovskite Solar Cell in Ambient Conditions. ENERGIES 2021. [DOI: 10.3390/en14061751] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
In this paper, we demonstrate the high potentialities of pristine single-cation and mixed cation/anion perovskite solar cells (PSC) fabricated by sequential method deposition in p-i-n planar architecture (ITO/NiOX/Perovskite/PCBM/BCP/Ag) in ambient conditions. We applied the crystal engineering approach for perovskite deposition to control the quality and crystallinity of the light-harvesting film. The formation of a full converted and uniform perovskite absorber layer from poriferous pre-film on a planar hole transporting layer (HTL) is one of the crucial factors for the fabrication of high-performance PSCs. We show that the in-air sequential deposited MAPbI3-based PSCs on planar nickel oxide (NiOX) permitted to obtain a Power Conversion Efficiency (PCE) exceeding 14% while the (FA,MA,Cs)Pb(I,Br)3-based PSC achieved 15.6%. In this paper we also compared the influence of transporting layers on the cell performance by testing material depositions quantity and thickness (for hole transporting layer), and conditions of deposition processes (for electron transporting layer). Moreover, we optimized second step of perovskite deposition by varying the dipping time of substrates into the MA(I,Br) solution. We have shown that the layer by layer deposition of the NiOx is the key point to improve the efficiency for inverted perovskite solar cell out of glove-box using sequential deposition method, increasing the relative efficiency of +26% with respect to reference cells.
Collapse
|
18
|
Qaid SMH, Ghaithan HM, Al-Asbahi BA, Aldwayyan AS. Achieving Optical Gain of the CsPbBr 3 Perovskite Quantum Dots and Influence of the Variable Stripe Length Method. ACS OMEGA 2021; 6:5297-5309. [PMID: 33681570 PMCID: PMC7931209 DOI: 10.1021/acsomega.0c05414] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2020] [Accepted: 02/05/2021] [Indexed: 05/27/2023]
Abstract
High-quality inorganic cesium lead halide perovskite quantum dot (CsPbBr3 PQD) thin films were successfully deposited directly from a powdered source and used as an active laser medium following the examination of their distinctive surface and structural properties. To determine the suitability of the CsPbBr3 PQDs as an active laser medium, amplified spontaneous emission (ASE) and optical gain properties were investigated under picosecond pulse excitation using the variable stripe length (VSL) method. The thin film of CsPbBr3 PQDs has exhibited a sufficient value of the optical absorption coefficient of ∼0.86 × 105 cm-1 near the band edge and a direct band gap energy E g ∼2.38 eV. The samples showed enhanced emission, and ASE was successfully recorded at a low threshold. The light emitted from the edge was observed near 2.40 and 2.33 eV for the stimulated emission (SE) and ASE regimes, respectively. The nonradiative decay contributes excitons dominant over biexcitons in the sample edge emission above the ASE threshold, making it practical for CsPbBr3 PQDs to be used as optical gain media without undergoing repeated SE processes above the threshold over long periods. A high value of the optical gain coefficient was recorded at 346 cm-1.
Collapse
Affiliation(s)
- Saif M. H. Qaid
- Department
of Physics & Astronomy, Faculty of Science, King Saud University, Riyadh 11451, Saudi Arabia
- Department
of Physics, Faculty of Science, Ibb University, Ibb 70270, Yemen
| | - Hamid M. Ghaithan
- Department
of Physics & Astronomy, Faculty of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Bandar Ali Al-Asbahi
- Department
of Physics & Astronomy, Faculty of Science, King Saud University, Riyadh 11451, Saudi Arabia
- Department
of Physics, Faculty of Science, Sana’a
University, Sana’a 12544, Yemen
| | - Abdullah S. Aldwayyan
- Department
of Physics & Astronomy, Faculty of Science, King Saud University, Riyadh 11451, Saudi Arabia
- King
Abdullah Institute for Nanotechnology, King
Saud University, Riyadh 11451, Saudi Arabia
- K.A.
CARE Energy Research and Innovation Center at Riyadh, Riyadh 11451, Saudi Arabia
| |
Collapse
|
19
|
Qaid SMH, Ghaithan HM, Al-Asbahi BA, Aldwayyan AS. Achieving Optical Gain of the CsPbBr 3 Perovskite Quantum Dots and Influence of the Variable Stripe Length Method. ACS OMEGA 2021; 6:5297-5309. [PMID: 33681570 DOI: 10.1021/acsomega.0c05414/suppl_file/ao0c05414_si_001.pdf] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Subscribe] [Scholar Register] [Received: 11/06/2020] [Accepted: 02/05/2021] [Indexed: 05/20/2023]
Abstract
High-quality inorganic cesium lead halide perovskite quantum dot (CsPbBr3 PQD) thin films were successfully deposited directly from a powdered source and used as an active laser medium following the examination of their distinctive surface and structural properties. To determine the suitability of the CsPbBr3 PQDs as an active laser medium, amplified spontaneous emission (ASE) and optical gain properties were investigated under picosecond pulse excitation using the variable stripe length (VSL) method. The thin film of CsPbBr3 PQDs has exhibited a sufficient value of the optical absorption coefficient of ∼0.86 × 105 cm-1 near the band edge and a direct band gap energy E g ∼2.38 eV. The samples showed enhanced emission, and ASE was successfully recorded at a low threshold. The light emitted from the edge was observed near 2.40 and 2.33 eV for the stimulated emission (SE) and ASE regimes, respectively. The nonradiative decay contributes excitons dominant over biexcitons in the sample edge emission above the ASE threshold, making it practical for CsPbBr3 PQDs to be used as optical gain media without undergoing repeated SE processes above the threshold over long periods. A high value of the optical gain coefficient was recorded at 346 cm-1.
Collapse
Affiliation(s)
- Saif M H Qaid
- Department of Physics & Astronomy, Faculty of Science, King Saud University, Riyadh 11451, Saudi Arabia
- Department of Physics, Faculty of Science, Ibb University, Ibb 70270, Yemen
| | - Hamid M Ghaithan
- Department of Physics & Astronomy, Faculty of Science, King Saud University, Riyadh 11451, Saudi Arabia
| | - Bandar Ali Al-Asbahi
- Department of Physics & Astronomy, Faculty of Science, King Saud University, Riyadh 11451, Saudi Arabia
- Department of Physics, Faculty of Science, Sana'a University, Sana'a 12544, Yemen
| | - Abdullah S Aldwayyan
- Department of Physics & Astronomy, Faculty of Science, King Saud University, Riyadh 11451, Saudi Arabia
- King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451, Saudi Arabia
- K.A. CARE Energy Research and Innovation Center at Riyadh, Riyadh 11451, Saudi Arabia
| |
Collapse
|
20
|
Zhang DG, Jian LY, Tseng ZL, Cheng HM, Lin JH. Investigation of random lasing from all-inorganic halide perovskite quantum dots prepared under ambient conditions. NANOSCALE 2021; 13:3246-3251. [PMID: 33533393 DOI: 10.1039/d0nr08326g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Random lasing from CsPbBr3 quantum dots (QDs) prepared by the hot injection method under ambient conditions has been investigated. The lasing characteristics and performance were related to the thickness and aggregation of the QDs film on a glass substrate. The perovskite emitted linear polarized ASE from the edge of the prepared sample as pump energy above a certain threshold, owing to the gain guiding effect. In comparison to the Q-switched Nd:YAG laser, the prepared perovskite random lasers produced a speckle reduced image with a lower contrast of around 0.051. Through temperature-dependent measurements under a surface normal emission configuration, the photon energy of ASE revealed a red shift as the temperature increased and showed a larger characteristic temperature of around 230 K. This result illustrates that the perovskite prepared under ambient conditions can be a promising material for a microcavity laser in the near future.
Collapse
Affiliation(s)
- Deng-Gui Zhang
- Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan.
| | - Liang-Yu Jian
- Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan.
| | - Zong-Liang Tseng
- Department of Electronic Engineering and Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan.
| | - Hsin-Ming Cheng
- Department of Electronic Engineering and Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan.
| | - Ja-Hon Lin
- Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan.
| |
Collapse
|
21
|
Liu X, Shao G, Zhang Y, Liang X, Li C, Xiang W. CsPbCl1.5Br1.5 perovskite nanocrystals glasses powder optimized by Zn2+ for photocatalytic hydrogen production. MOLECULAR CATALYSIS 2021. [DOI: 10.1016/j.mcat.2020.111305] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
|
22
|
Ji Y, Wang M, Yang Z, Qiu H, Wang H, Padhiar MA, Zhou Y, Dang J, Gaponenko NV, Bhatti AS. A versatile approach for shape-controlled synthesis of ultrathin perovskite nanostructures. Dalton Trans 2021; 50:3308-3314. [DOI: 10.1039/d0dt04203j] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We demonstrate that ultrathin CsPbBr3 nanostructures can be obtained by a simple mixing of precursor–ligand complexes under ambient conditions.
Collapse
|
23
|
Liu X, Yu Y, Yuan F, Zhao C, Dong H, Jiao B, Wu Z. Vacuum Dual-Source Thermal-Deposited Lead-Free Cs 3Cu 2I 5 Films with High Photoluminescence Quantum Yield for Deep-Blue Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2020; 12:52967-52975. [PMID: 33175517 DOI: 10.1021/acsami.0c17029] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Deep-blue emitters are greatly desirable for preparing white light-emitting diodes and enhancing the color gamut of full-color display. The deep-blue lead halide perovskite light-emitting diodes (PeLEDs) exhibit far inferior performance compared to green and red counterparts and suffer from lead toxicity, hampering their applications. Nontoxic, stable, and wide band gap zero-dimensional (0D) Cs3Cu2I5 with relatively high exciton binding energy has great potential as deep-blue emitters. However, the development of PeLEDs remains a huge challenge due to the difficulties in preparing a high-quality Cs3Cu2I5 film and device design, arising from an inherent wide band gap together with deep ionization potential. Here, a continuous and pin-hole-free Cs3Cu2I5 thin film with deep-blue emission centered at 440 nm was prepared by the dual-source thermal evaporation approach, and a high photoluminescence quantum yield of 58% was achieved, corresponding to significant enhancement of 61% compared with that of the Cs3Cu2I5 thin film synthesized by solution processes. Furthermore, saturated deep-blue PeLEDs at the Commission Internationale de L'Eclairage (CIE) coordinates (0.15, 0.08) were obtained by employing an electron-transfer layer composed of a 1,4,5,8,9,11-hexa-azatriphenylene hexacarboni-trile (HAT-CN) and N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine (NPB) organic heterojunction to realize the effective hole blocking, rendering an external quantum efficiency of approximately 0.1%. These results will be extensively beneficial to wide band gap material and device preparation.
Collapse
Affiliation(s)
- Xiaoyun Liu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, China
| | - Yue Yu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, China
- School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China
| | - Fang Yuan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, China
| | - Chenjing Zhao
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, China
| | - Hua Dong
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, China
- Collaborative Innovation Center of Extreme Optics, Shaanxi University, Taiyuan 030006, China
| | - Bo Jiao
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, China
- Collaborative Innovation Center of Extreme Optics, Shaanxi University, Taiyuan 030006, China
| | - Zhaoxin Wu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, China
- Collaborative Innovation Center of Extreme Optics, Shaanxi University, Taiyuan 030006, China
| |
Collapse
|
24
|
Ji Y, Wang M, Yang Z, Qiu H, Kou S, Padhiar MA, Bhatti AS, Gaponenko NV. Pressure-Driven Transformation of CsPbBrI 2 Nanoparticles into Stable Nanosheets in Solution through Self-Assembly. J Phys Chem Lett 2020; 11:9862-9868. [PMID: 33170699 DOI: 10.1021/acs.jpclett.0c02747] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Very recently, two-dimensional (2D) perovskite nanosheets (PNSs), taking the advantages of perovskite as well as the 2D structure properties, have received an enormous level of interest throughout the scientific community. In spite of this incredible success in perovskite nanocrystals (NCs), self-assembly of many nanostructures in metal halide perovskites has not yet been realized, and producing highly efficient red-emitting PNSs remains challenging. In this Letter, we show that by using CsPbBrI2 perovskite nanoparticles (NPs) as a building block, PNSs can emerge spontaneously under high ambient pressure via template-free self-assembly without additional complicated operation. It is found that the formation of PNSs is ascribed to the high pressure that provides the driving force for the alignment of NPs in solution. Because of the disappearance of the grain boundaries between the adjacent NPs and increased crystallinity, these PNSs self-assembled from NPs exhibit enhanced properties compared to the initial NPs, including higher PL intensity and remarkable chemical stability toward light and water.
Collapse
Affiliation(s)
- Yongqiang Ji
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research, Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, 710049 Xi'an, China
| | - Minqiang Wang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research, Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, 710049 Xi'an, China
| | - Zhi Yang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research, Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, 710049 Xi'an, China
| | - Hengwei Qiu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research, Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, 710049 Xi'an, China
| | - Song Kou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research, Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, 710049 Xi'an, China
| | - Muhammad Amin Padhiar
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research, Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, 710049 Xi'an, China
| | - Arshad Saleem Bhatti
- Centre for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Islamabad 44500, Pakistan
| | - Nikolai V Gaponenko
- Belarusian State University of Informatics and Radioelectronics, P. Browki St. 6, 220013 Minsk, Belarus
| |
Collapse
|
25
|
Cho C, Palatnik A, Sudzius M, Grodofzig R, Nehm F, Leo K. Controlling and Optimizing Amplified Spontaneous Emission in Perovskites. ACS APPLIED MATERIALS & INTERFACES 2020; 12:35242-35249. [PMID: 32658443 DOI: 10.1021/acsami.0c08870] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Perovskites are currently attracting extensive research interest as a wavelength-tunable lasing material. As a first step toward electrically pumped lasers, numerous investigations have recently reported amplified spontaneous emission (ASE) of optically pumped perovskites with remarkably low thresholds. Here, we investigate the optical aspects of perovskite ASE, to establish the design principle of materials and devices. We show that compared to solution-processed CsPbBr3, vacuum deposition yields superior ASE characteristics with a threshold of 35 μJ/cm2. The optical loss (Rloss) during lateral photon propagation in the waveguide mode is identified as a key parameter to determine the ASE quality. With spatially resolved photoluminescence, we determine Rloss as 40 and >1000 cm-1 for vacuum and solution-processed perovskites, respectively. We present a comprehensive model that relates ASE, gain length, optical loss, temperature, and density of states. Finally, we succeed in demonstrating ASE in perovskite samples with metal electrodes, mimicking a diode architecture for electrical pumping. Optical spacer layers are shown to play a crucial role in preventing metal absorption loss in waveguide modes.
Collapse
Affiliation(s)
- Changsoon Cho
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden 01187, Germany
| | - Alexander Palatnik
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden 01187, Germany
| | - Markas Sudzius
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden 01187, Germany
| | - Raphael Grodofzig
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden 01187, Germany
| | - Frederik Nehm
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden 01187, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden 01187, Germany
| |
Collapse
|
26
|
Nasi L, Calestani D, Mezzadri F, Mariano F, Listorti A, Ferro P, Mazzeo M, Mosca R. All-Inorganic CsPbBr 3 Perovskite Films Prepared by Single Source Thermal Ablation. Front Chem 2020; 8:313. [PMID: 32373592 PMCID: PMC7186377 DOI: 10.3389/fchem.2020.00313] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/11/2019] [Accepted: 03/30/2020] [Indexed: 11/18/2022] Open
Abstract
Hybrid organo-lead halide perovskites are becoming the benchmark material for next generation photovoltaics and a very important player for other applications such as photodetectors and light emitting diodes. Nevertheless, the most important issue hindering the large-scale application of these materials remains their intrinsic instability due to the organic cation. Although the substitution with inorganic cesium (Cs) enhances stability, in most cases solution deposition methods of fully inorganic perovskites result in high surface roughness and poor surface coverage. This work reports on the evaporation of the CsPbBr3 precursor by Single Source Thermal Ablation, showing that just after deposition films consist of a mixture of CsPbBr3, CsPb2Br5, and Cs4PbBr6 due to a vertical composition gradient. We point out that mild post deposition treatments lead to the conversion of CsPb2Br5 and Cs4PbBr6 into CsPbBr3 due to its higher thermodynamic stability. Conversion results into smooth and pinhole-free CsPbBr3 films with good light absorption and emission properties. We demonstrate the suitability of obtained films for planar devices by preparing perovskite-based pure-green light emitting diodes, thus promoting Single Source Thermal Ablation as a promising alternative deposition technique for all-inorganic perovskite-based devices.
Collapse
Affiliation(s)
- Lucia Nasi
- IMEM - CNR Institute of Materials for Electronics and Magnetism, Parma, Italy
| | - Davide Calestani
- IMEM - CNR Institute of Materials for Electronics and Magnetism, Parma, Italy
| | - Francesco Mezzadri
- Department of Chemistry, Life Sciences and Environmental Sustainability, University of Parma, Parma, Italy
| | - Fabrizio Mariano
- CNR NANOTEC, Institute of Nanotechnology, Lecce, Italy.,Dipartimento di Matematica e Fisica "Ennio De Giorgi", Università del Salento, Lecce, Italy
| | - Andrea Listorti
- CNR NANOTEC, Institute of Nanotechnology, Lecce, Italy.,Department of Chemistry, University of Bari "Aldo Moro", Bari, Italy
| | - Patrizia Ferro
- IMEM - CNR Institute of Materials for Electronics and Magnetism, Parma, Italy
| | - Marco Mazzeo
- CNR NANOTEC, Institute of Nanotechnology, Lecce, Italy.,Dipartimento di Matematica e Fisica "Ennio De Giorgi", Università del Salento, Lecce, Italy
| | - Roberto Mosca
- IMEM - CNR Institute of Materials for Electronics and Magnetism, Parma, Italy
| |
Collapse
|
27
|
Ji Y, Wang M, Yang Z, Qiu H, Ji S, Dou J, Gaponenko NV. Highly stable Na: CsPb(Br,I) 3@Al 2O 3 nanocomposites prepared by a pre-protection strategy. NANOSCALE 2020; 12:6403-6410. [PMID: 32141464 DOI: 10.1039/d0nr00069h] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Among the leading energy materials, metal tri-halide perovskite quantum dots (PQDs) with outstanding optoelectronic properties are at the forefront of current research. However, enormous challenges remain to be addressed, including hazardous components and poor stability, before achieving practical applications of PQDs. Although there are diverse methods to improve the stability of PQDs, it is of central importance to avoid damage during operation. Herein, we develop a pre-protected strategy in which the coating combines the advantages of doping with sodium ions to jointly improve stability. Because the stable Na-rich surface acts as a defence, it protects the PQDs from damage during the coating process; therefore, they retain their initial fluorescence. When employing these Na-rich PQDs as core materials of a coating, the highly fluorescent Na: CsPb(Br,I)3@Al2O3 nanocomposites can maintain good stability even when directly immersed in water or exposed to illumination. Clearly, the combination of these features sheds light on the stabilization and applications of PQDs.
Collapse
Affiliation(s)
- Yongqiang Ji
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shannxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
| | - Minqiang Wang
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shannxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
| | - Zhi Yang
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shannxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
| | - Hengwei Qiu
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shannxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
| | - Shangdong Ji
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shannxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
| | - Jinjuan Dou
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shannxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
| | - Nikolai V Gaponenko
- Belarusian State University of Informatics and Radioelectronics, P. Browki St. 6, 220013 Minsk, Belarus
| |
Collapse
|
28
|
Amplified Spontaneous Emission and Lasing in Lead Halide Perovskites: State of the Art and Perspectives. APPLIED SCIENCES-BASEL 2019. [DOI: 10.3390/app9214591] [Citation(s) in RCA: 37] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
Lead halide perovskites are currently receiving increasing attention due to their potential to combine easy active layers fabrication, tunable electronic and optical properties with promising performance of optoelectronic and photonic device prototypes. In this paper, we review the main development steps and the current state of the art of the research on lead halide perovskites amplified spontaneous emission and on optically pumped lasers exploiting them as active materials.
Collapse
|
29
|
Jiang L, Fang Z, Lou H, Lin C, Chen Z, Li J, He H, Ye Z. Achieving long carrier lifetime and high optical gain in all-inorganic CsPbBr 3 perovskite films via top and bottom surface modification. Phys Chem Chem Phys 2019; 21:21996-22001. [PMID: 31553029 DOI: 10.1039/c9cp04033a] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Solution-processed all-inorganic CsPbX3(X = Br, I, and Cl) perovskites are proven to be promising materials for various optoelectronic applications. However, CsPbX3 films as optical gain media were confronted with unsatisfactory surface coverage and inferior photoluminescence performance when compared with their colloidal nanocrystal counterparts. Herein, we demonstrate a strategy for improving the optical properties via modification of both top and bottom surfaces of CsPbBr3 films. The treated perovskite films show ultra-smooth morphology and a carrier lifetime of 44 ns, more than one order of magnitude longer than the untreated one. Meanwhile, a mixed polymer layer on the top of the perovskite film could combine surface passivation with symmetric waveguide effects, leading to an outstanding net gain coefficient of 694 cm-1. These merits predict the great potential of all-inorganic perovskite films to support high efficiency charge transport or stimulated emission.
Collapse
Affiliation(s)
- Li Jiang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.
| | | | | | | | | | | | | | | |
Collapse
|
30
|
Parrott ES, Patel JB, Haghighirad AA, Snaith HJ, Johnston MB, Herz LM. Growth modes and quantum confinement in ultrathin vapour-deposited MAPbI 3 films. NANOSCALE 2019; 11:14276-14284. [PMID: 31317998 DOI: 10.1039/c9nr04104d] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Vapour deposition of metal halide perovskite by co-evaporation of precursors has the potential to achieve large-area high-efficiency solar cells on an industrial scale, yet little is known about the growth of metal halide perovskites by this method at the current time. Here, we report the fabrication of MAPbI3 films with average thicknesses from 2-320 nm by co-evaporation. We analyze the film properties using X-ray diffraction, optical absorption and photoluminescence (PL) to provide insights into the nucleation and growth of MAPbI3 films on quartz substrates. We find that the perovskite initially forms crystallite islands of around 8 nm in height, which may be the cause of the persistent small grain sizes reported for evaporated metal halide perovskites that hinder device efficiency and stability. As more material is added, islands coalesce until full coverage of the substrate is reached at around 10 nm average thickness. We also find that quantum confinement induces substantial shifts to the PL wavelength when the average thickness is below 40 nm, offering dual-source vapour deposition as an alternative method of fabricating nanoscale structures for LEDs and other devices.
Collapse
Affiliation(s)
- Elizabeth S Parrott
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, UK.
| | - Jay B Patel
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, UK.
| | | | - Henry J Snaith
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, UK.
| | - Michael B Johnston
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, UK.
| | - Laura M Herz
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, UK.
| |
Collapse
|
31
|
Zhu W, Deng M, Zhang Z, Chen D, Xi H, Chang J, Zhang J, Zhang C, Hao Y. Intermediate Phase Halide Exchange Strategy toward a High-Quality, Thick CsPbBr 3 Film for Optoelectronic Applications. ACS APPLIED MATERIALS & INTERFACES 2019; 11:22543-22549. [PMID: 31150206 DOI: 10.1021/acsami.9b06427] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Inorganic halide perovskite CsPbBr3 is emerging as one of the promising alternatives to the hybrid counterparts for optoelectronic applications owing to its upgraded stability. Yet, the inherently low solubility of a CsBr precursor material restricts the quality and especially the thickness of a solution-processed CsPbBr3 film, thus hindering the further optimization of device performance. Herein, we report a facile intermediate phase halide exchange reaction that can break the thickness limit of a solution-processed CsPbBr3 film, since it avoids the use of low-solubility CsBr. Furthermore, the CH3NH3I byproduct after halide exchange could trigger a beneficial Ostwald ripening process to promote grain coarsening in the film. Hence, the uniformly flat, pure-phase, and compact CsPbBr3 film composed of [100] preferential, microsized grains can be achieved. As a demonstration of its excellent optoelectronic features, the carbon-based, all-inorganic photodetector with such a favorable film yields a maximum photoresponsivity of 0.35 A W-1 and a specific detectivity of 1.94 × 1013 Jones coupled with a response time of 0.58 μs.
Collapse
Affiliation(s)
- Weidong Zhu
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics , Xidian University , Xi'an 710071 , China
| | - Minyu Deng
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics , Xidian University , Xi'an 710071 , China
| | - Zeyang Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics , Xidian University , Xi'an 710071 , China
| | - Dazheng Chen
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics , Xidian University , Xi'an 710071 , China
| | - He Xi
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics , Xidian University , Xi'an 710071 , China
- State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Jingjing Chang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics , Xidian University , Xi'an 710071 , China
| | - Jincheng Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics , Xidian University , Xi'an 710071 , China
| | - Chunfu Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics , Xidian University , Xi'an 710071 , China
| | - Yue Hao
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics , Xidian University , Xi'an 710071 , China
| |
Collapse
|
32
|
Ji Y, Wang M, Yang Z, Ji S, Qiu H, Dou J, Gaponenko NV. Reversible transformation between CsPbBr3 nanowires and nanoparticles. Chem Commun (Camb) 2019; 55:12809-12812. [DOI: 10.1039/c9cc06123a] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We show that CsPbBr3 nanowires (NWs) are formed by the hierarchical arrangement of individual nanoparticles (NPs), and reversible transformation from NWs to NPs is also achieved by anion exchange.
Collapse
Affiliation(s)
- Yongqiang Ji
- Electronic Materials Research Laboratory (EMRL)
- Key Laboratory of Education Ministry
- International Center for Dielectric Research (ICDR)
- Shanxi Engineering Research Center of Advanced Energy Materials and Devices
- School of Electronic and Information Engineering
| | - Minqiang Wang
- Electronic Materials Research Laboratory (EMRL)
- Key Laboratory of Education Ministry
- International Center for Dielectric Research (ICDR)
- Shanxi Engineering Research Center of Advanced Energy Materials and Devices
- School of Electronic and Information Engineering
| | - Zhi Yang
- Electronic Materials Research Laboratory (EMRL)
- Key Laboratory of Education Ministry
- International Center for Dielectric Research (ICDR)
- Shanxi Engineering Research Center of Advanced Energy Materials and Devices
- School of Electronic and Information Engineering
| | - Shangdong Ji
- Electronic Materials Research Laboratory (EMRL)
- Key Laboratory of Education Ministry
- International Center for Dielectric Research (ICDR)
- Shanxi Engineering Research Center of Advanced Energy Materials and Devices
- School of Electronic and Information Engineering
| | - Hengwei Qiu
- Electronic Materials Research Laboratory (EMRL)
- Key Laboratory of Education Ministry
- International Center for Dielectric Research (ICDR)
- Shanxi Engineering Research Center of Advanced Energy Materials and Devices
- School of Electronic and Information Engineering
| | - Jinjuan Dou
- Electronic Materials Research Laboratory (EMRL)
- Key Laboratory of Education Ministry
- International Center for Dielectric Research (ICDR)
- Shanxi Engineering Research Center of Advanced Energy Materials and Devices
- School of Electronic and Information Engineering
| | - Nikolai V. Gaponenko
- Belarusian State University of Informatics and Radioelectronics
- 220013 Minsk
- Belarus
| |
Collapse
|