One-Step Co-Evaporation of All-Inorganic Perovskite Thin Films with Room-Temperature Ultralow Amplified Spontaneous Emission Threshold and Air Stability

Facet-selective growth of halide perovskite/2D semiconductor van der Waals heterostructures for improved optical gain and lasing

The tunable properties of halide perovskite/two dimensional (2D) semiconductor mixed-dimensional van der Waals heterostructures offer high flexibility for innovating optoelectronic and photonic devices. However, the general and robust growth of high-quality monocrystalline halide perovskite/2D semiconductor heterostructures with attractive optical properties has remained challenging. Here, we demonstrate a universal van der Waals heteroepitaxy strategy to synthesize a library of facet-specific single-crystalline halide perovskite/2D semiconductor (multi)heterostructures. The obtained heterostructures can be broadly tailored by selecting the coupling layer of interest, and can include perovskites varying from all-inorganic to organic-inorganic hybrid counterparts, individual transition metal dichalcogenides or 2D heterojunctions. The CsPbI2Br/WSe2 heterostructures demonstrate ultrahigh optical gain coefficient, reduced gain threshold and prolonged gain lifetime, which are attributed to the reduced energetic disorder. Accordingly, the self-organized halide perovskite/2D semiconductor heterostructure lasers show highly reproducible single-mode lasing with largely reduced lasing threshold and improved stability. Our findings provide a high-quality and versatile material platform for probing unique optoelectronic and photonic physics and developing further electrically driven on-chip lasers, nanophotonic devices and electronic-photonic integrated systems.

Thermally Evaporated Metal Halide Perovskites and Their Analogues: Film Fabrication, Applications and Beyond

Metal halide perovskites emerge as promising semiconductors for optoelectronic devices due to ease of fabrication, attractive photophysical properties, their low cost, highly tunable material properties, and high performance. High-quality thin films of metal halide perovskites are the basis of most of these applications including solar cells, light-emitting diodes, photodetectors, and electronic memristors. A typical fabrication method for perovskite thin films is the solution method, which has several limitations in device reproducibility, adverse environmental impact, and utilization of raw materials. Thermal evaporation holds great promise in addressing these bottlenecks in fabricating high-quality halide perovskite thin films. It also has high compatibility with mass-production platforms that are well-established in industries. This review first introduces the basics of the thermal evaporation method with a particular focus on the critical parameters influencing the thin film deposition. The research progress of the fabrication of metal halide perovskite thin films is further summarized by different thermal evaporation approaches and their applications in solar cells and other optoelectronic devices. Finally, research challenges and future opportunities for both fundamental research and commercialization are discussed.

Water-Resistant Subwavelength Perovskite Lasing from Transparent Silica-Based Nanocavity

Great research efforts are devoted to exploring the miniaturization of chip-scale coherent light sources possessing excellent lasing performance. Despite the indispensable role in Si photonics, SiO2 is generally considered not contributing to the starting up and operation of integrated lasers. Here, this work demonstrates an extraordinary-performance subwavelength-scale perovskite vertical cavity laser with all-transparent SiO2 cavity, whose cavity is ultra-simple and composed of only two parallel SiO2 plates. By introducing a ligand-assisted thermally co-evaporation strategy, highly luminescent perovskite film with high reproducibility and excellent optical gain is grown directly on SiO2 . Benefitting from their high-refractive-index contrast, low-threshold, high-quality factor, and single-mode lasing is achieved in subwavelength range of ≈120 nm, and verified by long-range coherence distance (115.6 µm) and high linear polarization degree (82%). More importantly, the subwavelength perovskite laser device could operate in water for 20 days without any observable degradation, exhibiting ultra-stable water-resistant performance. These findings would provide a simple but robust and reliable strategy for the miniaturized on-chip lasers compatible with Si photonics.

Amplified spontaneous emission from inclusions containing cesium lead bromide in glasses

Cesium lead halide (CsPbX3, X = Cl, Br and I) perovskite nanocrystals embedded glasses exhibit good optical properties and have potential as gain media. However, origins of the amplified spontaneous emission (ASE) from CsPbX3 nanocrystals are controversial. Here, it is found that ASE is from CsPbX3 nanocrystals in inclusions instead of CsPbX3 nanocrystals dispersed in the glass matrix. Inclusions with various sizes are capable of generating ASE, and ASE of the inclusions can sustain at energy densities as high as several tens of mJ/cm2. Thresholds of the fs laser energy densities increase with the increase in fs laser wavelength, and high net optical gain coefficient is obtained.

Room-Temperature Continuous-Wave Microcavity Lasers from Solution-Processed Smooth Quasi-2D Perovskite Films with Low Thresholds

Continuous-wave (CW) lasing in quasi-two-dimensional (2D) perovskite-based distributed feedback cavities has been achieved at room temperature; however, CW microcavity lasers comprising distributed Bragg reflectors (DBRs) have rarely been prepared using solution-processed quasi-2D perovskite films because the roughness of perovskite films significantly increases intersurface scattering loss in the microcavity. Herein, high-quality spin-coated quasi-2D perovskite gain films were prepared using an antisolvent to reduce roughness. The highly reflective top DBR mirrors were deposited via room-temperature e-beam evaporation to protect the perovskite gain layer. Lasing emission of the prepared quasi-2D perovskite microcavity lasers under CW optical pumping was clearly observed at room temperature, featuring a low threshold of ∼1.4 W cm^-2 and beam divergence of ∼3.5°. It was concluded that these lasers originated from weakly coupled excitons. These results elucidate the importance of controlling the roughness of quasi-2D films to achieve CW lasing, thus facilitating the design of electrically pumped perovskite microcavity lasers.

Flexible Microspectrometers Based on Printed Perovskite Pixels with Graded Bandgaps

Miniaturized spectrometers have attracted much attention due to their capability to detect spectral information within a small size. However, such technology still faces challenges including large-scale preparation and performance repeatability. In this work, we overcome these challenges by demonstrating a microspectrometer constructed with a series of pixelized graded-bandgap perovskite photodetectors fabricated with inkjet printing. High-quality perovskite films with minimal pinholes and large grains are deposited by optimizing printing conditions including substrate temperature and surface modification. The resulting perovskite photodetectors show decent photosensing performance, and the different photodetectors based on perovskite films with different bandgaps exhibit various spectral responsivities with different cutoff wavelength edges. Microspectrometers are then constructed with the array of the pixelized graded-bandgap perovskite photodetectors, and incident spectra are algorithmically reconstructed by combining their output currents. The reconstruction performance of the miniaturized spectrometer is evaluated by comparing the results to the spectral curve measured with a commercial bulky spectrometer, indicating a reliable spectral reconstruction with a resolution of around 10 nm. More significantly, the miniaturized spectrometers are successfully fabricated on polymer substrates, and they demonstrate excellent mechanical flexibility. Therefore, this work provides a flexible miniaturized spectrometer with large-scale fabricability, which is promising for emerging applications including wearable devices, hyperspectral imaging, and internet of things.

Investigation of Two Photon Absorption of Ligand-Modified CsPbBr3 Quantum Dots

The characteristics and application of nonlinear absorption from CsPbBr₃ QDs film with the ligand-modified strategy have been investigated in this work. By means of a near-infrared fs Ti:sapphire laser as a light source, the up-conversion emission of CsPbBr₃ QDs film of around 518 nm revealed a quadratic increase with the pump intensity. Through the temperature-dependent up-conversion emission, we obtained the binding energy and longitudinal optical (LO) phonon energy of CsPbBr₃ QDs film of around 58.1 and 61.2 meV, respectively. Due to more active thermal coupling between the excited electron or hot phonon effect, the photon decay trace under two-photon excitation was prolonged at higher temperatures. The ligand-modified CsPbBr₃ QDs film exhibits a relatively large TPA coefficient of around 28.6 cm/GW by the open aperture Z-scan measurement, and it has been demonstrated as a promising nonlinear medium to obtain the pulsewidth of ultrafast lasers.

Vacuum-Vapor-Deposited 0D/3D All-Inorganic Perovskite Composite Films toward Low-Threshold Amplified Spontaneous Emission and Lasing

Vacuum vapor deposition (VVD) is a promising way to advancing the commercialization of perovskite light sources owing to its convenience for wafer-scale mass production and compatibility with silicon photonics manufacturing infrastructure. However, the light emission performance of VVD-grown perovskites still lags far behind that of the conventional solution-processed counterparts due to their inferior luminescence properties. Here, a 0D/3D cesium-lead-bromide perovskite composite film is prepared on Si/SiO₂ substrates through composition modulation with the VVD method, which exhibits an ultralow amplified spontaneous emission (ASE) threshold down to 14.3 µJ cm^-2 in the optimal films, which is on par with that of the solution-processed counterparts. Meanwhile, they also display intriguing operational stability with negligible emission intensity decay under continuous excitation above ASE threshold for 4 h in the air. The outstanding ASE performance mainly originates from the reduced trap density and weakened electron-phonon coupling in the 3D CsPbBr₃ phase enabled by the incorporation of the 0D Cs₄ PbBr₆ phase. Finally, by integrating the composite film with the distributed feedback (DFB) cavity, DFB lasing is achieved with a low threshold of 18.2 µJ cm^-2 under nanosecond-pulsed laser pumping, which highlights the potential of VVD-processed perovskites for developing high-performance lasers.

Amplified Spontaneous Emission from Thermally Evaporated High-Quality Thin Films of CsPb(Br1-xYx)3 (Y = I, Cl) Perovskites

As a wavelength-tunable lasing material, perovskites are now generating a lot of scientific attention. Conventional solution-processed CsPbX₃ perovskite films sometimes suffer unavoidable pinhole defects and poor surface morphology, severely limiting their performance on amplified spontaneous emission (ASE) and lasing application. Herein, a thermal evaporation approach is explored in our work to achieve a uniform and high-coverage CsPb(Br_1-xY_x)₃ (Y = I, Cl) perovskites polycrystalline thin film. The ASE of these films was studied using a picosecond laser system. The ASE profile increases rapidly over the narrow peak in relation to the laser pump intensity, confirming the development of stimulated emission. ASE began when the energy density threshold was reached and ranged between 25 and 170 μJ/cm² per pulse for perovskite materials when replacing I with Br and then Cl. This work emphasizes the notable optical properties of high-quality perovskite thin films, leading to possible accessible uses in optoelectronic applications.

Amplified spontaneous emission from all-inorganic perovskite on a flexible substrate with silk fibroin

Stretchable microcavity lasers reveal potential application in flexible displays, biomedicine, and wearable devices in the near future. In this work, we investigated the characteristic of amplified spontaneous emission (ASE) from all inorganic CsPbBr₃ QDs on a flexible PET substrate with the assistance of biocompatible silk fibroin (SF) film. In comparison with the sample on PET directly, the ASE of all-inorganic perovskite film revealed a lower threshold of 32.7 μJ/cm², higher slope efficiency, and a larger gain coefficient of around 100.0 cm⁻¹ owing to the better stack and good arrangement of the CsPbBr₃ QDs on top of the SF film. For the temperature-dependent ASE measurement, the larger characteristic temperature of around 277 K is obtained from CsPbBr₃ QD/SF film, and the emission peak reveals a slight shift with temperature variation, which indicates its temperature-insensitive property. As the curvature of flexible substrate increases under the mechanical bending, the lasing threshold of CsPbBr₃ QD/SF film was reduced along with the increase in slope efficiency owing to the enhancement in the index guiding effect.

All Optical Switching through Anistropic Gain of CsPbBr3 Single Crystal Microplatelet

Perovskite micro/nanostructures have recently emerged as a highly attractive gain material for nanolasers. To explore their applications and further improve performance, it is essential to understand the optical gain and the anisotropic properties. Herein, we obtained high quality CsPbBr₃ microplatelets (MP) with anisotropic orthorhombic phase. Optical gain of CsPbBr₃ single crystal MP was investigated via microscale variable stripe-length measurement. A polarization-dependent optical gain was observed, and the gain along [002] was larger than that of [1-10]. The behavior was attributed to the lowest energy transition dipole moment of [002] induced by the smaller deviation of Br-Pb-Br bond from the perfect lattice. Along the [002] direction, we obtained the optical gain value up to 5077 cm^-1, which is the record value ever reported. Moreover, all optical switching of lasing is realized by periodical polarized excitation. Our results provide new perceptions in the design of novel functional anisotropic devices based on perovskite micro/nanostructures.

Effect of a Rubidium Chloride Carrier Confinement Layer on the Characteristics of CsPbBr3 Perovskite Light-Emitting Diodes

This work describes the effect of a rubidium chloride (RbCl) interlayer in CsPbBr3 perovskite light-emitting diode (LED) structures. RbCl crystallites exhibited polyhedral structures and lattice parameters similar to those of CsPbBr3 perovskite crystallites. The lattice mismatch between the RbCl interlayer and CsPbBr3 active layer was only approximately 2%. The devices exhibited the best quality and performance when RbCl was used as the nucleation and carrier confinement layer. The crystallite sizes of CsPbBr3 with 0.2-, 0.5-, and 1-nm-thick RbCl bottom layers were 55.1, 65.4, and 55.1 nm, respectively. The full width at half maximum (FWHM) of the photoluminescence (PL) emission peak for CsPbBr3 with the RbCl bottom layer was 0.096 eV.

Pulsed Laser Deposition of CsPbBr3 Films: Impact of the Composition of the Target and Mass Distribution in the Plasma Plume

All-inorganic cesium lead bromine (CsPbBr3) perovskites have gained a tremendous potential in optoelectronics due to interesting photophysical properties and much better stability than the hybrid counterparts. Although pulsed laser deposition (PLD) is a promising alternative to solvent-based and/or thermal deposition approaches due to its versatility in depositing multi-elemental materials, deep understanding of the implications of both target composition and PLD mechanisms on the properties of CsPbBr3 films is still missing. In this paper, we deal with thermally assisted preparation of mechano-chemically synthesized CsPbBr3 ablation targets to grow CsPbBr3 films by PLD at the fluence 2 J/cm2. We study both Cs rich- and stoichiometric PbBr2-CsBr mixture-based ablation targets and point out compositional deviations of the associated films resulting from the mass distribution of the PLD-generated plasma plume. Contrary to the conventional meaning that PLD guarantees congruent elemental transfer from the target to the substrate, our study demonstrates cation off-stoichiometry of PLD-grown CsPbBr3 films depending on composition and thermal treatment of the ablation target. The implications of the observed enrichment in the heavier element (Pb) and deficiency in the lighter element (Br) of the PLD-grown films are discussed in terms of optical response and with the perspective of providing operative guidelines and future PLD-deposition strategies of inorganic perovskites.

Pina J, Zhu T, H. Parmar D, Chang H, Yu J, Yuan F, Bappi G, Hou Y, Zheng X, Abed J, Chen H, Zhang J, Gao Y, Chen B, Wang Y, Chen H, Zhang T, Hoogland S, Saidaminov MI, Sun L, Bakr OM, Dong H, Zhang L, H. Sargent E. Quantum Dot Self-Assembly Enables Low-Threshold Lasing

Perovskite quantum dots (QDs) are of interest for solution-processed lasers; however, their short Auger lifetime has limited lasing operation principally to the femtosecond temporal regime the photoexcitation levels to achieve optical gain threshold are up to two orders of magnitude higher in the nanosecond regime than in the femtosecond. Here the authors report QD superlattices in which the gain medium facilitates excitonic delocalization to decrease Auger recombination and in which the macroscopic dimensions of the structures provide the optical feedback required for lasing. The authors develope a self-assembly strategy that relies on sodiumd-an assembly director that passivates the surface of the QDs and induces self-assembly to form ordered three-dimensional cubic structures. A density functional theory model that accounts for the attraction forces between QDs allows to explain self-assembly and superlattice formation. Compared to conventional organic-ligand-passivated QDs, sodium enables higher attractive forces, ultimately leading to the formation of micron-length scale structures and the optical faceting required for feedback. Simultaneously, the decreased inter-dot distance enabled by the new ligand enhances exciton delocalization among QDs, as demonstrated by the dynamically red-shifted photoluminescence. These structures function as the lasing cavity and the gain medium, enabling nanosecond-sustained lasing with a threshold of 25 µJ cm-2 .

Exploiting a Multiphase Pure Formamidinium Lead Perovskite for Efficient Green-Light-Emitting Diodes

Formamidinium (FA)-based perovskites have demonstrated excellent advances in optoelectronics recently, but in terms of perovskite compounds, the optimal condition of their composition optimization remains controversial. Herein, we boosted the performance of perovskite light-emitting diodes (PeLEDs) in both efficiency and stability through composition and phase engineering. The low-dimensional FA₂PbBr₄ particles emerged and mixed with the FAPbBr₃ composites when the FABr content is excessive. By regulating the phase composition in multiphase FAPbBr₃ perovskites, the maximum external quantum efficiency (EQE_max) of optimal PeLEDs (5.14%) is 2.7-fold higher than that of pure FAPbBr₃-based PeLEDs (1.90%), and device stability is improved. Further optimizing the film quality and emission efficiency with Rb⁺ ions, the EQE_max of PeLEDs can be increased to 6.01%, with a half-lifetime of about 185 s under the high current density. This strategy of phase composition optimization in FA-based perovskites provides an effective way to process high-efficiency and stable PeLEDs.

Trioctylphosphine-Assisted Pre-protection Low-Temperature Solvothermal Synthesis of Highly Stable CsPbBr3/TiO2 Nanocomposites

Lead halide perovskite quantum dots (PQDs) are reported as a promising branch of perovskites, which have recently emerged as a field in luminescent materials research. However, before the practical applications of PQDs can be realized, the problem of poor stability has not yet been solved. Herein, we propose a trioctylphosphine (TOP)-assisted pre-protection low-temperature solvothermal synthesis of highly stable CsPbBr₃/TiO₂ nanocomposites. Due to the protection of branched ligands and the lower temperature of shell formation, these TOP-modified CsPbBr₃ PQDs are successfully incorporated into a TiO₂ monolith without a loss of fluorescence intensity. Because the excellent nature of both parent materials is preserved in CsPbBr₃/TiO₂ nanocomposites, it is found that the as-prepared CsPbBr₃/TiO₂ nanocomposites not only display excellent photocatalytic activity but also yield improved PL stability, enabling us to build highly stable white light-emitting diodes and to photodegrade rhodamine B.

Crystal Engineering Approach for Fabrication of Inverted Perovskite Solar Cell in Ambient Conditions

In this paper, we demonstrate the high potentialities of pristine single-cation and mixed cation/anion perovskite solar cells (PSC) fabricated by sequential method deposition in p-i-n planar architecture (ITO/NiOX/Perovskite/PCBM/BCP/Ag) in ambient conditions. We applied the crystal engineering approach for perovskite deposition to control the quality and crystallinity of the light-harvesting film. The formation of a full converted and uniform perovskite absorber layer from poriferous pre-film on a planar hole transporting layer (HTL) is one of the crucial factors for the fabrication of high-performance PSCs. We show that the in-air sequential deposited MAPbI3-based PSCs on planar nickel oxide (NiOX) permitted to obtain a Power Conversion Efficiency (PCE) exceeding 14% while the (FA,MA,Cs)Pb(I,Br)3-based PSC achieved 15.6%. In this paper we also compared the influence of transporting layers on the cell performance by testing material depositions quantity and thickness (for hole transporting layer), and conditions of deposition processes (for electron transporting layer). Moreover, we optimized second step of perovskite deposition by varying the dipping time of substrates into the MA(I,Br) solution. We have shown that the layer by layer deposition of the NiOx is the key point to improve the efficiency for inverted perovskite solar cell out of glove-box using sequential deposition method, increasing the relative efficiency of +26% with respect to reference cells.

Achieving Optical Gain of the CsPbBr3 Perovskite Quantum Dots and Influence of the Variable Stripe Length Method

High-quality inorganic cesium lead halide perovskite quantum dot (CsPbBr₃ PQD) thin films were successfully deposited directly from a powdered source and used as an active laser medium following the examination of their distinctive surface and structural properties. To determine the suitability of the CsPbBr₃ PQDs as an active laser medium, amplified spontaneous emission (ASE) and optical gain properties were investigated under picosecond pulse excitation using the variable stripe length (VSL) method. The thin film of CsPbBr₃ PQDs has exhibited a sufficient value of the optical absorption coefficient of ∼0.86 × 10⁵ cm^-1 near the band edge and a direct band gap energy E _g ∼2.38 eV. The samples showed enhanced emission, and ASE was successfully recorded at a low threshold. The light emitted from the edge was observed near 2.40 and 2.33 eV for the stimulated emission (SE) and ASE regimes, respectively. The nonradiative decay contributes excitons dominant over biexcitons in the sample edge emission above the ASE threshold, making it practical for CsPbBr₃ PQDs to be used as optical gain media without undergoing repeated SE processes above the threshold over long periods. A high value of the optical gain coefficient was recorded at 346 cm^-1.

Achieving Optical Gain of the CsPbBr3 Perovskite Quantum Dots and Influence of the Variable Stripe Length Method

High-quality inorganic cesium lead halide perovskite quantum dot (CsPbBr₃ PQD) thin films were successfully deposited directly from a powdered source and used as an active laser medium following the examination of their distinctive surface and structural properties. To determine the suitability of the CsPbBr₃ PQDs as an active laser medium, amplified spontaneous emission (ASE) and optical gain properties were investigated under picosecond pulse excitation using the variable stripe length (VSL) method. The thin film of CsPbBr₃ PQDs has exhibited a sufficient value of the optical absorption coefficient of ∼0.86 × 10⁵ cm^-1 near the band edge and a direct band gap energy E _g ∼2.38 eV. The samples showed enhanced emission, and ASE was successfully recorded at a low threshold. The light emitted from the edge was observed near 2.40 and 2.33 eV for the stimulated emission (SE) and ASE regimes, respectively. The nonradiative decay contributes excitons dominant over biexcitons in the sample edge emission above the ASE threshold, making it practical for CsPbBr₃ PQDs to be used as optical gain media without undergoing repeated SE processes above the threshold over long periods. A high value of the optical gain coefficient was recorded at 346 cm^-1.

Investigation of random lasing from all-inorganic halide perovskite quantum dots prepared under ambient conditions

Random lasing from CsPbBr3 quantum dots (QDs) prepared by the hot injection method under ambient conditions has been investigated. The lasing characteristics and performance were related to the thickness and aggregation of the QDs film on a glass substrate. The perovskite emitted linear polarized ASE from the edge of the prepared sample as pump energy above a certain threshold, owing to the gain guiding effect. In comparison to the Q-switched Nd:YAG laser, the prepared perovskite random lasers produced a speckle reduced image with a lower contrast of around 0.051. Through temperature-dependent measurements under a surface normal emission configuration, the photon energy of ASE revealed a red shift as the temperature increased and showed a larger characteristic temperature of around 230 K. This result illustrates that the perovskite prepared under ambient conditions can be a promising material for a microcavity laser in the near future.

A versatile approach for shape-controlled synthesis of ultrathin perovskite nanostructures

We demonstrate that ultrathin CsPbBr₃ nanostructures can be obtained by a simple mixing of precursor–ligand complexes under ambient conditions.

Vacuum Dual-Source Thermal-Deposited Lead-Free Cs3Cu2I5 Films with High Photoluminescence Quantum Yield for Deep-Blue Light-Emitting Diodes

Deep-blue emitters are greatly desirable for preparing white light-emitting diodes and enhancing the color gamut of full-color display. The deep-blue lead halide perovskite light-emitting diodes (PeLEDs) exhibit far inferior performance compared to green and red counterparts and suffer from lead toxicity, hampering their applications. Nontoxic, stable, and wide band gap zero-dimensional (0D) Cs₃Cu₂I₅ with relatively high exciton binding energy has great potential as deep-blue emitters. However, the development of PeLEDs remains a huge challenge due to the difficulties in preparing a high-quality Cs₃Cu₂I₅ film and device design, arising from an inherent wide band gap together with deep ionization potential. Here, a continuous and pin-hole-free Cs₃Cu₂I₅ thin film with deep-blue emission centered at 440 nm was prepared by the dual-source thermal evaporation approach, and a high photoluminescence quantum yield of 58% was achieved, corresponding to significant enhancement of 61% compared with that of the Cs₃Cu₂I₅ thin film synthesized by solution processes. Furthermore, saturated deep-blue PeLEDs at the Commission Internationale de L'Eclairage (CIE) coordinates (0.15, 0.08) were obtained by employing an electron-transfer layer composed of a 1,4,5,8,9,11-hexa-azatriphenylene hexacarboni-trile (HAT-CN) and N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine (NPB) organic heterojunction to realize the effective hole blocking, rendering an external quantum efficiency of approximately 0.1%. These results will be extensively beneficial to wide band gap material and device preparation.

Pressure-Driven Transformation of CsPbBrI2 Nanoparticles into Stable Nanosheets in Solution through Self-Assembly

Very recently, two-dimensional (2D) perovskite nanosheets (PNSs), taking the advantages of perovskite as well as the 2D structure properties, have received an enormous level of interest throughout the scientific community. In spite of this incredible success in perovskite nanocrystals (NCs), self-assembly of many nanostructures in metal halide perovskites has not yet been realized, and producing highly efficient red-emitting PNSs remains challenging. In this Letter, we show that by using CsPbBrI₂ perovskite nanoparticles (NPs) as a building block, PNSs can emerge spontaneously under high ambient pressure via template-free self-assembly without additional complicated operation. It is found that the formation of PNSs is ascribed to the high pressure that provides the driving force for the alignment of NPs in solution. Because of the disappearance of the grain boundaries between the adjacent NPs and increased crystallinity, these PNSs self-assembled from NPs exhibit enhanced properties compared to the initial NPs, including higher PL intensity and remarkable chemical stability toward light and water.

Controlling and Optimizing Amplified Spontaneous Emission in Perovskites

Perovskites are currently attracting extensive research interest as a wavelength-tunable lasing material. As a first step toward electrically pumped lasers, numerous investigations have recently reported amplified spontaneous emission (ASE) of optically pumped perovskites with remarkably low thresholds. Here, we investigate the optical aspects of perovskite ASE, to establish the design principle of materials and devices. We show that compared to solution-processed CsPbBr₃, vacuum deposition yields superior ASE characteristics with a threshold of 35 μJ/cm². The optical loss (R_loss) during lateral photon propagation in the waveguide mode is identified as a key parameter to determine the ASE quality. With spatially resolved photoluminescence, we determine R_loss as 40 and >1000 cm^-1 for vacuum and solution-processed perovskites, respectively. We present a comprehensive model that relates ASE, gain length, optical loss, temperature, and density of states. Finally, we succeed in demonstrating ASE in perovskite samples with metal electrodes, mimicking a diode architecture for electrical pumping. Optical spacer layers are shown to play a crucial role in preventing metal absorption loss in waveguide modes.

All-Inorganic CsPbBr3 Perovskite Films Prepared by Single Source Thermal Ablation

Hybrid organo-lead halide perovskites are becoming the benchmark material for next generation photovoltaics and a very important player for other applications such as photodetectors and light emitting diodes. Nevertheless, the most important issue hindering the large-scale application of these materials remains their intrinsic instability due to the organic cation. Although the substitution with inorganic cesium (Cs) enhances stability, in most cases solution deposition methods of fully inorganic perovskites result in high surface roughness and poor surface coverage. This work reports on the evaporation of the CsPbBr₃ precursor by Single Source Thermal Ablation, showing that just after deposition films consist of a mixture of CsPbBr₃, CsPb₂Br₅, and Cs₄PbBr₆ due to a vertical composition gradient. We point out that mild post deposition treatments lead to the conversion of CsPb₂Br₅ and Cs₄PbBr₆ into CsPbBr₃ due to its higher thermodynamic stability. Conversion results into smooth and pinhole-free CsPbBr₃ films with good light absorption and emission properties. We demonstrate the suitability of obtained films for planar devices by preparing perovskite-based pure-green light emitting diodes, thus promoting Single Source Thermal Ablation as a promising alternative deposition technique for all-inorganic perovskite-based devices.

Highly stable Na: CsPb(Br,I)3@Al2O3 nanocomposites prepared by a pre-protection strategy

Among the leading energy materials, metal tri-halide perovskite quantum dots (PQDs) with outstanding optoelectronic properties are at the forefront of current research. However, enormous challenges remain to be addressed, including hazardous components and poor stability, before achieving practical applications of PQDs. Although there are diverse methods to improve the stability of PQDs, it is of central importance to avoid damage during operation. Herein, we develop a pre-protected strategy in which the coating combines the advantages of doping with sodium ions to jointly improve stability. Because the stable Na-rich surface acts as a defence, it protects the PQDs from damage during the coating process; therefore, they retain their initial fluorescence. When employing these Na-rich PQDs as core materials of a coating, the highly fluorescent Na: CsPb(Br,I)3@Al2O3 nanocomposites can maintain good stability even when directly immersed in water or exposed to illumination. Clearly, the combination of these features sheds light on the stabilization and applications of PQDs.

Amplified Spontaneous Emission and Lasing in Lead Halide Perovskites: State of the Art and Perspectives

Lead halide perovskites are currently receiving increasing attention due to their potential to combine easy active layers fabrication, tunable electronic and optical properties with promising performance of optoelectronic and photonic device prototypes. In this paper, we review the main development steps and the current state of the art of the research on lead halide perovskites amplified spontaneous emission and on optically pumped lasers exploiting them as active materials.

Achieving long carrier lifetime and high optical gain in all-inorganic CsPbBr3 perovskite films via top and bottom surface modification

Solution-processed all-inorganic CsPbX3(X = Br, I, and Cl) perovskites are proven to be promising materials for various optoelectronic applications. However, CsPbX3 films as optical gain media were confronted with unsatisfactory surface coverage and inferior photoluminescence performance when compared with their colloidal nanocrystal counterparts. Herein, we demonstrate a strategy for improving the optical properties via modification of both top and bottom surfaces of CsPbBr3 films. The treated perovskite films show ultra-smooth morphology and a carrier lifetime of 44 ns, more than one order of magnitude longer than the untreated one. Meanwhile, a mixed polymer layer on the top of the perovskite film could combine surface passivation with symmetric waveguide effects, leading to an outstanding net gain coefficient of 694 cm-1. These merits predict the great potential of all-inorganic perovskite films to support high efficiency charge transport or stimulated emission.

Growth modes and quantum confinement in ultrathin vapour-deposited MAPbI3 films

Vapour deposition of metal halide perovskite by co-evaporation of precursors has the potential to achieve large-area high-efficiency solar cells on an industrial scale, yet little is known about the growth of metal halide perovskites by this method at the current time. Here, we report the fabrication of MAPbI3 films with average thicknesses from 2-320 nm by co-evaporation. We analyze the film properties using X-ray diffraction, optical absorption and photoluminescence (PL) to provide insights into the nucleation and growth of MAPbI3 films on quartz substrates. We find that the perovskite initially forms crystallite islands of around 8 nm in height, which may be the cause of the persistent small grain sizes reported for evaporated metal halide perovskites that hinder device efficiency and stability. As more material is added, islands coalesce until full coverage of the substrate is reached at around 10 nm average thickness. We also find that quantum confinement induces substantial shifts to the PL wavelength when the average thickness is below 40 nm, offering dual-source vapour deposition as an alternative method of fabricating nanoscale structures for LEDs and other devices.

Intermediate Phase Halide Exchange Strategy toward a High-Quality, Thick CsPbBr3 Film for Optoelectronic Applications

Inorganic halide perovskite CsPbBr₃ is emerging as one of the promising alternatives to the hybrid counterparts for optoelectronic applications owing to its upgraded stability. Yet, the inherently low solubility of a CsBr precursor material restricts the quality and especially the thickness of a solution-processed CsPbBr₃ film, thus hindering the further optimization of device performance. Herein, we report a facile intermediate phase halide exchange reaction that can break the thickness limit of a solution-processed CsPbBr₃ film, since it avoids the use of low-solubility CsBr. Furthermore, the CH₃NH₃I byproduct after halide exchange could trigger a beneficial Ostwald ripening process to promote grain coarsening in the film. Hence, the uniformly flat, pure-phase, and compact CsPbBr₃ film composed of [100] preferential, microsized grains can be achieved. As a demonstration of its excellent optoelectronic features, the carbon-based, all-inorganic photodetector with such a favorable film yields a maximum photoresponsivity of 0.35 A W^-1 and a specific detectivity of 1.94 × 10¹³ Jones coupled with a response time of 0.58 μs.

Reversible transformation between CsPbBr3 nanowires and nanoparticles

We show that CsPbBr₃ nanowires (NWs) are formed by the hierarchical arrangement of individual nanoparticles (NPs), and reversible transformation from NWs to NPs is also achieved by anion exchange.