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Wang Q, Gu Y, Chen C, Han L, Fayaz MU, Pan F, Song C. Strain-Induced Uphill Hydrogen Distribution in Perovskite Oxide Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3726-3734. [PMID: 38197268 DOI: 10.1021/acsami.3c17472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
Incorporating hydrogen into transition-metal oxides (TMOs) provides a facile and powerful way to manipulate the performances of TMOs, and thus numerous efforts have been invested in developing hydrogenation methods and exploring the property modulation via hydrogen doping. However, the distribution of hydrogen ions, which is a key factor in determining the physicochemical properties on a microscopic scale, has not been clearly illustrated. Here, focusing on prototypical perovskite oxide (NdNiO3 and La0.67Sr0.33MnO3) epitaxial films, we find that hydrogen distribution exhibits an anomalous "uphill" feature (against the concentration gradient) under tensile strain, namely, the proton concentration enhances upon getting farther from the hydrogen source. Distinctly, under a compressive strain state, hydrogen shows a normal distribution without uphill features. The epitaxial strain significantly influences the chemical lattice coupling and the energy profile as a function of the hydrogen doping position, thus dominating the hydrogen distribution. Furthermore, the strain-(H+) distribution relationship is maintained in different hydrogenation methods (metal-alkali treatment) which is first applied to perovskite oxides. The discovery of strain-dependent hydrogen distribution in oxides provides insights into tailoring the magnetoelectric and energy-conversion functionalities of TMOs via strain engineering.
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Affiliation(s)
- Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Youdi Gu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Chong Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Lei Han
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Muhammad Umer Fayaz
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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2
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Park Y, Sim H, Doh KY, Jo M, Lee D, Choi SY, Son J. Anionic Flow Valve Across Oxide Heterointerfaces by Remote Electron Doping. NANO LETTERS 2022; 22:9306-9312. [PMID: 36395459 DOI: 10.1021/acs.nanolett.2c02736] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
As an analogue of charged electron flows, the ionic flow could be controlled by the electronic band alignment due to the ambipolar nature of diffusion in the ionic crystal. Here, we demonstrate the active control of the anionic diffusion across heterointerfaces through remote electron doping in the capping layers. In contrast to the spontaneous ionic flux from the underlying VO2 layers to the undoped TiO2 capping layers, the activated Nb dopants in the TiO2 capping layers substantially restrict the ionic flux, despite identical growth conditions. The increase of Fermi level by Nb donors in TiO2 prevents electron flux from being generated across the interfaces by the heightening of a Schottky barrier; this electron shortage generates a kinetic close valve for the flow of negatively charged oxygen ions. Thus, these results demonstrate the importance of electron supply on charged ionic flow, thereby suggesting an unprecedented strategy for ionic-defect-induced emergent properties at interfaces.
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Affiliation(s)
- Yunkyu Park
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Hyeji Sim
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Kyung-Yeon Doh
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Minguk Jo
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Donghwa Lee
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Junwoo Son
- Department of Materials Science and Engineering (MSE), Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
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3
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Wang Q, Gu Y, Chen C, Pan F, Song C. Oxide Spintronics as a Knot of Physics and Chemistry: Recent Progress and Opportunities. J Phys Chem Lett 2022; 13:10065-10075. [PMID: 36264651 DOI: 10.1021/acs.jpclett.2c02634] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Transition-metal oxides (TMOs) constitute a key material family in spintronics because of mutually coupled degrees of freedom and tunable magneto-ionic properties. In this Perspective, we consider oxide spintronics as a knot of physics and chemistry and mainly discuss two current hot topics: spin-charge interconversion and magneto-ionics. First, spin-charge interconversion is focused on oxide films and heterostructures including 4d/5d heavy metal oxides (e.g., SrIrO3) and two-dimensional electron gases. Based on spin-charge interconversion, charge currents can be transformed to spin currents and generate spin-orbit torque in oxide/metal and all-oxide heterostructures. Additionally, the voltage control of magnetism in TMOs by the magneto-ionic pathway has rapidly accelerated during the past few years due to the versatile advantages of effective control, nonvolatile nature, low power cost, etc. Typical magneto-ionic oxide systems and corresponding physicochemical mechanisms will be discussed. Finally, further developments of oxide spintronics are envisioned, including material discovery, physics exploration, device design, and manipulation methods.
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Affiliation(s)
- Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Youdi Gu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Chong Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
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4
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Yin Z, Wang J, Wang J, Li J, Zhou H, Zhang C, Zhang H, Zhang J, Shen F, Hao J, Yu Z, Gao Y, Wang Y, Chen Y, Sun JR, Bai X, Wang JT, Hu F, Zhao TY, Shen B. Compressive-Strain-Facilitated Fast Oxygen Migration with Reversible Topotactic Transformation in La 0.5Sr 0.5CoO x via All-Solid-State Electrolyte Gating. ACS NANO 2022; 16:14632-14643. [PMID: 36107149 DOI: 10.1021/acsnano.2c05243] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Modifying the crystal structure and corresponding functional properties of complex oxides by regulating their oxygen content has promising applications in energy conversion and chemical looping, where controlling oxygen migration plays an important role. Therefore, finding an efficacious and feasible method to facilitate oxygen migration has become a critical requirement for practical applications. Here, we report a compressive-strain-facilitated oxygen migration with reversible topotactic phase transformation (RTPT) in La0.5Sr0.5CoOx films based on all-solid-state electrolyte gating modulation. With the lattice strain changing from tensile to compressive strain, significant reductions in modulation duration (∼72%) and threshold voltage (∼70%) for the RTPT were observed, indicating great promotion of RTPT by compressive strain. Density functional theory calculations verify that such compressive-strain-facilitated efficient RTPT comes from significant reduction of the oxygen migration barrier in compressive-strained films. Further, ac-STEM, EELS, and sXAS investigations reveal that varying strain from tensile to compressive enhances the Co 3d band filling, thereby suppressing the Co-O hybrid bond in oxygen vacancy channels, elucidating the micro-origin of such compressive-strain-facilitated oxygen migration. Our work suggests that controlling electronic orbital occupation of Co ions in oxygen vacancy channels may help facilitate oxygen migration, providing valuable insights and practical guidance for achieving highly efficient oxygen-migration-related chemical looping and energy conversion with complex oxides.
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Affiliation(s)
- Zhuo Yin
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People's Republic of China
| | - Jianlin Wang
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People's Republic of China
| | - Jing Wang
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People's Republic of China
- Fujian Innovation Academy, Chinese Academy of Sciences, Fuzhou, Fujian 350108, People's Republic of China
| | - Jia Li
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People's Republic of China
| | - Houbo Zhou
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People's Republic of China
| | - Cheng Zhang
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People's Republic of China
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, People's Republic of China
| | - Hui Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, People's Republic of China
| | - Jine Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, People's Republic of China
| | - Feiran Shen
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Spallation Neutron Source Science Center, Dongguan 523803, People's Republic of China
| | - Jiazheng Hao
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Spallation Neutron Source Science Center, Dongguan 523803, People's Republic of China
| | - Zibing Yu
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People's Republic of China
| | - Yihong Gao
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People's Republic of China
| | - Yangxin Wang
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Spallation Neutron Source Science Center, Dongguan 523803, People's Republic of China
| | - Yunzhong Chen
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Ji-Rong Sun
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Jian-Tao Wang
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Fengxia Hu
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Tong-Yun Zhao
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou, Jiangxi 341000, People's Republic of China
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People's Republic of China
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, People's Republic of China
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou, Jiangxi 341000, People's Republic of China
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5
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Wang Q, Gu Y, Yin S, Sun Y, Liu W, Zhang Z, Pan F, Song C. Facilitating room-temperature oxygen ion migration via Co-O bond activation in cobaltite films. NANOSCALE 2021; 13:18256-18266. [PMID: 34713881 DOI: 10.1039/d1nr03801j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Oxygen ion migration in strongly correlated oxides can cause dramatic changes in the crystal structure, chemical and magnetoelectric properties, which holds promising for a wide variety of applications in catalysis, energy conversion, and electronics. However, the high strength and stability of metal-oxygen (M-O) bonds cause a large thermodynamic barrier for oxygen migration. Here, we designed Co-O bond activation in cobaltite (SrCoOx) films by Au-nanodot-decoration. Charge transfer from Au to SrCoOx effectively weakens the Co-O bond, meanwhile Co-O-Au synergistic bonding remarkably decreases the migration barrier of oxygen ions. Fast oxygen evolution occurs at the perimeter of the Au/SrCoOx interface, and the chemical potential gradient of O2- drives inner ion diffusion to the surface. Consequently, bias-free topotactic phase reduction from perovskite SrCoO3-δ to brownmillerite SrCoO2.5 has been achieved at room temperature. Our finding explores a new dimension to accelerate oxygen ion kinetics in transition-metal oxides from the aspect of interfacial bond activation, which is significant for developing oxide/noble-metal interfaces for high-efficiency ion migration and redox catalysis at low temperature.
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Affiliation(s)
- Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
| | - Youdi Gu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
| | - Siqi Yin
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
| | - Yiming Sun
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
| | - Wei Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
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6
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Zhang C, Ding S, Qiao K, Li J, Li Z, Yin Z, Sun J, Wang J, Zhao T, Hu F, Shen B. Large Low-Field Magnetoresistance (LFMR) Effect in Free-Standing La 0.7Sr 0.3MnO 3 Films. ACS APPLIED MATERIALS & INTERFACES 2021; 13:28442-28450. [PMID: 34105344 DOI: 10.1021/acsami.1c03753] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The realization of a large low-field magnetoresistance (LFMR) effect in free-standing magnetic oxide films is a crucial goal toward promoting the development of flexible, low power consumption, and nonvolatile memory devices for information storage. La0.7Sr0.3MnO3 (LSMO) is an ideal material for spintronic devices due to its excellent magnetic and electronic properties. However, it is difficult to achieve both a large LFMR effect and high flexibility in LSMO films due to the lack of research on LFMR-related mechanisms and the strict LSMO growth conditions, which require rigid substrates. Here, we induced a large LFMR effect in an LSMO/mica heterostructure by utilizing a disorder-related spin-polarized tunneling effect and developed a simple transfer method to obtain free-standing LSMO films for the first time. Electrical and magnetic characterizations of these free-standing LSMO films revealed that all of the principal properties of LSMO were sustained under compressive and tensile conditions. Notably, the magnetoresistance of the processed LSMO film reached up to 16% under an ultrasmall magnetic field (0.1 T), which is 80 times that of a traditional LSMO film. As a demonstration, a stable nonvolatile multivalue storage function in flexible LSMO films was successfully achieved. Our work may pave the way for future wearable resistive memory device applications.
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Affiliation(s)
- Cheng Zhang
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Shuaishuai Ding
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Sciences, Tianjin University, Tianjin 300072, People's Republic of China
| | - Kaiming Qiao
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jia Li
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhe Li
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhuo Yin
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jirong Sun
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Jing Wang
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Fujian Institute of Innovation, Chinese Academy of Sciences, Fuzhou, Fujian 350108, People's Republic of China
| | - Tongyun Zhao
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou, Jiangxi 341000, People's Republic of China
| | - Fengxia Hu
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Baogen Shen
- Beijing National Laboratory of Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou, Jiangxi 341000, People's Republic of China
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Ji H, Zhou G, Wang X, Zhang J, Kang P, Xu X. Electric-Field Reversible Switching of the Exchange Spring and Exchange Bias Effect in SrCoO 3-x/La 0.7Sr 0.3MnO 3 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2021; 13:15774-15782. [PMID: 33769029 DOI: 10.1021/acsami.0c22254] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The technique of electrical field to manipulate physicochemical properties of oxide heterostructures has ample potential in electronic and ionitronic devices. SrCoO3-x is a famous "sponge" material displaying topotactic structural phase transition from perovskite (0 ≤ x ≤ 0.25) to brownmillerite (x = 0.5) accompanied by the magnetic phase transition from ferromagnetism to antiferromagnetism, which can be controlled reversibly by electric field via the ionic liquid gating method. Here, the exchange spring effect can be observed at the perovskite SrCoO3-x (P-SCO)/La0.7Sr0.3MnO3 (LSMO) bilayer, while the exchange bias effect is received at the brownmillerite SrCoO2.5 (B-SCO)/LSMO bilayer. The reversible and nonvolatile switching of the exchange spring and exchange bias effect can be achieved in these SCO3-x/LSMO bilayers by utilizing ionic liquid gating to control the annihilation or generation of oxygen vacancies. In addition, the variations in the stacking orders of these SCO3-x/LSMO bilayers are investigated because the previous SCO3-x layer always acts as the cover layer. It is worth noting that LSMO/SCO3-x bilayer magnetization is strongly suppressed when the SCO3-x layer is used as the bottom layer. Combined with the X-ray line dichroism measurements, it is suggested that the bottom SCO3-x layer would induce the spin arrangements in the LSMO layer to have the tendency toward the out-of-plane orientation. This is the reason for the sharp decrease in magnetization of LSMO/SCO3-x bilayers. Our investigations accomplish a reversible control of the exchange coupling transition in all-oxide bilayers and provide the foundation for further electric-field control of magnetic properties.
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Affiliation(s)
- Huihui Ji
- School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, P. R. China
| | - Guowei Zhou
- School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, P. R. China
- Research Institute of Materials Science of Shanxi Normal University & Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Techonology, Linfen 041004, China
| | - Xiaojiao Wang
- School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, P. R. China
| | - Jun Zhang
- School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, P. R. China
| | - Penghua Kang
- School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, P. R. China
| | - Xiaohong Xu
- School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, P. R. China
- Research Institute of Materials Science of Shanxi Normal University & Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Techonology, Linfen 041004, China
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8
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Tian J, Zhang Y, Fan Z, Wu H, Zhao L, Rao J, Chen Z, Guo H, Lu X, Zhou G, Pennycook SJ, Gao X, Liu JM. Nanoscale Phase Mixture and Multifield-Induced Topotactic Phase Transformation in SrFeO x. ACS APPLIED MATERIALS & INTERFACES 2020; 12:21883-21893. [PMID: 32314574 DOI: 10.1021/acsami.0c03684] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Nanoscale phase mixtures in transition-metal oxides (TMOs) often render these materials susceptible to external stimuli (electric field, mechanical stress, etc.), which can lead to rich functional properties and device applications. Here, direct observation and multifield manipulation of a nanoscale mixture of brownmillerite SrFeO2.5 (BM-SFO) and perovskite SrFeO3 (PV-SFO) phases in SrFeOx (SFO) epitaxial thin films are reported. The mixed-phase SFO film in its pristine state exhibits a nanoscaffold structure consisting of PV-SFO nanodomains embedded in the BM-SFO matrix. This nanoscaffold structure produces gridlike patterns in the current and electrochemical strain maps, owing to the strikingly different electrical and electrochemical properties of BM-SFO and PV-SFO. Moreover, electric field control of reversible topotactic phase transformation between BM-SFO and PV-SFO is demonstrated by electric-field-induced reversible changes in surface height, conductance, and electrochemical strain response. In addition, it is also shown that the BM-SFO → PV-SFO phase transformation can be enabled by applying mechanical stress. This study therefore not only identifies a strong nanometric structure-property correlation in the mixed-phase SFO but also offers a new paradigm for the multifield control of topotactic phase transformation.
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Affiliation(s)
- Junjiang Tian
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Yang Zhang
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- Instrumental Analysis Center of Xi'an Jiaotong University, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhen Fan
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Haijun Wu
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Lei Zhao
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Jingjing Rao
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China
| | - Haizhong Guo
- School of Physical Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Xubing Lu
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Stephen J Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Xingsen Gao
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Jun-Ming Liu
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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9
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Gu Y, Song C, Zhang Q, Li F, Tan H, Xu K, Li J, Saleem MS, Fayaz MU, Peng J, Hu F, Gu L, Liu W, Zhang Z, Pan F. Interfacial Control of Ferromagnetism in Ultrathin SrRuO 3 Films Sandwiched between Ferroelectric BaTiO 3 Layers. ACS APPLIED MATERIALS & INTERFACES 2020; 12:6707-6715. [PMID: 31927907 DOI: 10.1021/acsami.9b20941] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Interfaces between materials provide an intellectually rich arena for fundamental scientific discovery and device design. However, the frustration of magnetization and conductivity of perovskite oxide films under reduced dimensionality is detrimental to their device performance, preventing their active low-dimensional application. Herein, by inserting the ultrathin 4d ferromagnetic SrRuO3 layer between ferroelectric BaTiO3 layers to form a sandwich heterostructure, we observe enhanced physical properties in ultrathin SrRuO3 films, including longitudinal conductivity, Curie temperature, and saturated magnetic moment. Especially, the saturated magnetization can be enhanced to ∼3.12 μB/Ru in ultrathin BaTiO3/SrRuO3/BaTiO3 trilayers, which is beyond the theoretical limit of bulk value (2 μB/Ru). This observation is attributed to the synergistic ferroelectric proximity effect (SFPE) at upper and lower BaTiO3/SrRuO3 heterointerfaces, as revealed by the high-resolution lattice structure analysis. This SFPE in dual-ferroelectric interface cooperatively induces ferroelectric-like lattice distortions in RuO6 oxygen octahedra and subsequent spin-state crossover in SrRuO3, which in turn accounts for the observed enhanced magnetization. Besides the fundamental significance of interface-induced spin-lattice coupling, our findings also provide a viable route to the electrical control of magnetic ordering, taking a step toward low-power applications in all-oxide spintronics.
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Affiliation(s)
- Youdi Gu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Shenyang 110016 , China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Beijing 100190 , China
| | - Fan Li
- Max Planck Institute for Microstructure Physics , Halle (Saale) D-06120 , Germany
| | - Hengxin Tan
- Max Planck Institute for Microstructure Physics , Halle (Saale) D-06120 , Germany
| | - Kun Xu
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Jia Li
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Beijing 100190 , China
| | - Muhammad Shahrukh Saleem
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Muhammad Umer Fayaz
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Jingjing Peng
- Beijing Institute of Aeronautical Materials , Beijing 100095 , China
| | - Fengxia Hu
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Beijing 100190 , China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Beijing 100190 , China
| | - Wei Liu
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Shenyang 110016 , China
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Shenyang 110016 , China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
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