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Rong C, Su T, Li Z, Chu T, Zhu M, Yan Y, Zhang B, Xuan FZ. Elastic properties and tensile strength of 2D Ti 3C 2T x MXene monolayers. Nat Commun 2024; 15:1566. [PMID: 38378699 PMCID: PMC10879101 DOI: 10.1038/s41467-024-45657-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Accepted: 01/29/2024] [Indexed: 02/22/2024] Open
Abstract
Two-dimensional (2D) transition metal nitrides and carbides (MXenes), represented by Ti3C2Tx, have broad applications in flexible electronics, electromechanical devices, and structural membranes due to their unique physical and chemical properties. Despite the Young's modulus of 2D Ti3C2Tx has been theoretically predicted to be 0.502 TPa, which has not been experimentally confirmed so far due to the measurement is extremely restricted. Here, by optimizing the sample preparation, cutting, and transfer protocols, we perform the direct in-situ tensile tests on monolayer Ti3C2Tx nanosheets using nanomechanical push-to-pull equipment under a scanning electron microscope. The effective Young's modulus is 0.484 ± 0.013 TPa, which is much closer to the theoretical value of 0.502 TPa than the previously reported 0.33 TPa by the disputed nanoindentation method, and the measured elastic stiffness is ~948 N/m. Moreover, during the process of tensile loading, the monolayer Ti3C2Tx shows an average elastic strain of ~3.2% and a tensile strength as large as ~15.4 GPa. This work corrects the previous reports by nanoindentation method and demonstrates that the Ti3C2Tx indeed keeps immense potential for broad range of applications.
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Affiliation(s)
- Chao Rong
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Ting Su
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Zhenkai Li
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Tianshu Chu
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Mingliang Zhu
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China
| | - Yabin Yan
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China.
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China.
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China.
| | - Bowei Zhang
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China.
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China.
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China.
| | - Fu-Zhen Xuan
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai, 200237, P. R. China.
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai, 200237, P. R. China.
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, 200237, P. R. China.
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Jo E, Kang Y, Sim S, Lee H, Kim J. High-Temperature-Operable Electromechanical Computing Units Enabled by Aligned Carbon Nanotube Arrays. ACS NANO 2023. [PMID: 37418328 DOI: 10.1021/acsnano.3c01304] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/09/2023]
Abstract
Nano/micro-electromechanical (NEM/MEM) contact switches have great potential as energy-efficient and high-temperature-operable computing units to surmount those limitations of transistors. However, despite recent advances, the high-temperature operation of the mechanical switch is not fully stable nor repetitive due to the melting and softening of the contact material in the mechanical switch. Herein, MEM switches with carbon nanotube (CNT) arrays capable of operating at high temperatures are presented. In addition to the excellent thermal stability of CNT arrays, the absence of a melting point of CNTs allows the proposed switches to operate successfully at up to 550 °C, surpassing the maximum operating temperatures of state-of-the-art mechanical switches. The switches with CNTs also show a highly reliable contact lifetime of over 1 million cycles, even at a high temperature of 550 °C. Moreover, symmetrical pairs of normally open and normally closed MEM switches, whose interfaces are initially in contact and separated, respectively, are introduced. Consequently, the complementary inverters and logic gates operating at high temperatures can be easily configured such as NOT, NOR, and NAND gates. These switches and logic gates reveal the possibility for developing low-power, high-performance integrated circuits for high-temperature operations.
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Affiliation(s)
- Eunhwan Jo
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Yunsung Kang
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Sangjun Sim
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Hojoon Lee
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Jongbaeg Kim
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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Cai T, Fang Y, Fang Y, Li R, Yu Y, Huang M. Electrostatic pull-in application in flexible devices: A review. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2022; 13:390-403. [PMID: 35529805 PMCID: PMC9039526 DOI: 10.3762/bjnano.13.32] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Accepted: 03/30/2022] [Indexed: 05/03/2023]
Abstract
The electrostatic pull-in effect is a common phenomenon and a key parameter in the design of microscale and nanoscale devices. Flexible electronic devices based on the pull-in effect have attracted increasing attention due to their unique ductility. This review summarizes nanoelectromechanical switches made by flexible materials and classifies and discusses their applications in, among others, radio frequency systems, microfluidic systems, and electrostatic discharge protection. It is supposed to give researchers a more comprehensive understanding of the pull-in phenomenon and the development of its applications. Also, the review is meant to provide a reference for engineers to design and optimize devices.
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Affiliation(s)
- Teng Cai
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China
- National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing University of Posts and Telecommunications, Nanjing, China
| | - Yuming Fang
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China
- National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing University of Posts and Telecommunications, Nanjing, China
| | - Yingli Fang
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China
- National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing University of Posts and Telecommunications, Nanjing, China
| | - Ruozhou Li
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China
- National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing University of Posts and Telecommunications, Nanjing, China
| | - Ying Yu
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China
- National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing University of Posts and Telecommunications, Nanjing, China
| | - Mingyang Huang
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China
- National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing University of Posts and Telecommunications, Nanjing, China
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Jo E, Lee YB, Jung Y, Kim SB, Kang Y, Seo MH, Yoon JB, Kim J. Integration of Gold Nanoparticle-Carbon Nanotube Composite for Enhanced Contact Lifetime of Microelectromechanical Switches with Very Low Contact Resistance. ACS APPLIED MATERIALS & INTERFACES 2021; 13:16959-16967. [PMID: 33797217 DOI: 10.1021/acsami.0c22084] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Electrical circuits require ideal switches with low power consumption for future electronic applications. However, transistors, the most developed electrical switches available currently, have certain fundamental limitations such as increased leakage current and limited subthreshold swing. To overcome these limitations, micromechanical switches have been extensively studied; however, it is challenging to develop micromechanical switches with high endurance and low contact resistance. This study demonstrates highly reliable microelectromechanical switches using nanocomposites. Nanocomposites consisting of gold nanoparticles (Au NPs) and carbon nanotubes (CNTs) are coated on contact electrodes as contact surfaces through a scalable and solution-based fabrication process. While deformable CNTs in the nanocomposite increase the effective contact area under mechanical loads, highly conductive Au NPs provide current paths with low contact resistance between CNTs. Given these advantages, the switches exhibit robust switching operations over 5 × 106 cycles under hot-switching conditions in air. The switches also show low contact resistance without subthreshold region, an extremely small leakage current, and a high on/off ratio.
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Affiliation(s)
- Eunhwan Jo
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Yong-Bok Lee
- School of Electrical Engineering, Korea Advanced Institute of Science Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Yohan Jung
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Su-Bon Kim
- School of Electrical Engineering, Korea Advanced Institute of Science Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Yunsung Kang
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Min-Ho Seo
- School of Biomedical Convergence Engineering, College of Information & Biomedical Engineering, Pusan National University, 49 Busandaehak-ro, Yangsan-si, Gyeongsangnam-do 50612, Republic of Korea
| | - Jun-Bo Yoon
- School of Electrical Engineering, Korea Advanced Institute of Science Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jongbaeg Kim
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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Seo MH, Yoo JY, Jo MS, Yoon JB. Geometrically Structured Nanomaterials for Nanosensors, NEMS, and Nanosieves. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907082. [PMID: 32253800 DOI: 10.1002/adma.201907082] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2019] [Revised: 12/18/2019] [Indexed: 06/11/2023]
Abstract
Recently, geometrically structured nanomaterials have received great attention due to their unique physical and chemical properties, which originate from the geometric variation in such materials. Indeed, the use of various geometrically structured nanomaterials has been actively reported in enhanced-performance devices in a wide range of applications. Recent significant progress in the development of geometrically structured nanomaterials and associated devices is summarized. First, a brief introduction of advanced nanofabrication methods that enable the fabrication of various geometrically structured nanomaterials is given, and then the performance enhancements achieved in devices utilizing these nanomaterials, namely, i) physical and gas nanosensors, ii) nanoelectromechanical devices, and iii) nanosieves are described. For the device applications, a systematic summary of their structures, working mechanisms, fabrication methods, and output performance is provided. Particular focus is given to how device performance can be enhanced through the geometric structures of the nanomaterials. Finally, perspectives on the development of novel nanomaterial structures and associated devices are presented.
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Affiliation(s)
- Min-Ho Seo
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
- Center for Bio-Integrated Electronics, Northwestern University, Evanston, IL, 60208, USA
| | - Jae-Young Yoo
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Min-Seung Jo
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jun-Bo Yoon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
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