Large-Area and Strain-Reduced Two-Dimensional Molybdenum Disulfide Monolayer Emitters on a Three-Dimensional Substrate

Tailored Synthesis of Heterogenous 2D TMDs and Their Spectroscopic Characterization

Two-dimensional (2D) vertical van der Waals heterostructures (vdWHs) show great potential across various applications. However, synthesizing large-scale structures poses challenges owing to the intricate growth parameters, forming unexpected hybrid film structures. Thus, precision in synthesis and thorough structural analysis are essential aspects. In this study, we successfully synthesized large-scale structured 2D transition metal dichalcogenides (TMDs) via chemical vapor deposition using metal oxide (WO3 and MoO3) thin films and a diluted H2S precursor, individual MoS2, WS2 films and various MoS2/WS2 hybrid films (Type I: MoxW1-xS2 alloy; Type II: MoS2/WS2 vdWH; Type III: MoS2 dots/WS2). Structural analyses, including optical microscopy, Raman spectroscopy, transmission electron microscopy (TEM) with energy-dispersive X-ray spectroscopy, and cross-sectional imaging revealed that the A1g and E2g modes of WS2 and MoS2 were sensitive to structural variations, enabling hybrid structure differentiation. Type II showed minimal changes in the MoS2's A1g mode, while Types I and III exhibited a ~2.8 cm-1 blue shift. Furthermore, the A1g mode of WS2 in Type I displayed a 1.4 cm-1 red shift. These variations agreed with the TEM-observed microstructural features, demonstrating strain effects on the MoS2-WS2 interfaces. Our study provides insights into the structural features of diverse hybrid TMD materials, facilitating their differentiation through Raman spectroscopy.

Toward Planar Iodine 2D Crystal Materials

Usually, the octet rule determines whether an elemental 2D material can only be set by one of the elements in groups IIIA-VA, whose outmost electrons can form hybridized orbits from an s-wave and a p-wave. The hybridized orbits can accommodate all of the outermost electrons and form robust σ bonds. As for the elements in VIA-VIIA, the outermost electrons seem too abundant to be accommodated in hybridized orbits. Here, we show a spd² hybridization rule, accommodating all of the outermost electrons of halogen elements. Each atom can be connected to a contiguous atom by a robust σ bond and carries one dangling unpaired electron, implying that the formation of a π bond is possible. One iodine atomic layer can be robustly locked by the σ bond, forming an iodiene sheet by spd² hybridized orbits. With application of compression strain, the π bond forms, and further compression drives the band inversion successively at the valence band and the conduction band. The appearance of Dirac points (arc or hoop) suggests that the transformation of a normal semimetal into a Dirac semimetal occurs.