1
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Gao H, Wang Z, Cao J, Lin YC, Ling X. Advancing Nanoelectronics Applications: Progress in Non-van der Waals 2D Materials. ACS NANO 2024; 18:16343-16358. [PMID: 38899467 DOI: 10.1021/acsnano.4c01177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
Extending the inventory of two-dimensional (2D) materials remains highly desirable, given their excellent properties and wide applications. Current studies on 2D materials mainly focus on the van der Waals (vdW) materials since the discovery of graphene, where properties of atomically thin layers have been found to be distinct from their bulk counterparts. Beyond vdW materials, there are abundant non-vdW materials that can also be thinned down to 2D forms, which are still in their early stage of exploration. In this review, we focus on the downscaling of non-vdW materials into 2D forms to enrich the 2D materials family. This underexplored group of 2D materials could show potential promise in many areas such as electronics, optics, and magnetics, as has happened in the vdW 2D materials. Hereby, we will focus our discussion on their electronic properties and applications of them. We aim to motivate and inspire fellow researchers in the 2D materials community to contribute to the development of 2D materials beyond the widely studied vdW layered materials for electronic device applications. We also give our insights into the challenges and opportunities to guide researchers who are desirous of working in this promising research area.
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Affiliation(s)
- Hongze Gao
- Department of Chemistry, Boston University 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
| | - Zifan Wang
- Department of Chemistry, Boston University 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
| | - Jun Cao
- Department of Chemistry, Boston University 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
| | - Yuxuan Cosmi Lin
- Department of Materials Science and Engineering, Texas A&M University 575 Ross Street, College Station, Texas 77843, United States
| | - Xi Ling
- Department of Chemistry, Boston University 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
- Division of Materials Science and Engineering, Boston University 15 St Mary's Street, Boston, Massachusetts 02215, United States
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2
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Zheng T, Pan Y, Yang M, Li Z, Zheng Z, Li L, Sun Y, He Y, Wang Q, Cao T, Huo N, Chen Z, Gao W, Xu H, Li J. 2D Free-Standing GeS 1-xSe x with Composition-Tunable Bandgap for Tailored Polarimetric Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313721. [PMID: 38669677 DOI: 10.1002/adma.202313721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2023] [Revised: 03/30/2024] [Indexed: 04/28/2024]
Abstract
Germanium-based monochalcogenides (i.e., GeS and GeSe) with desirable properties are promising candidates for the development of next-generation optoelectronic devices. However, they are still stuck with challenges, such as relatively fixed electronic band structure, unconfigurable optoelectronic characteristics, and difficulty in achieving free-standing growth. Herein, it is demonstrated that two-dimensional (2D) free-standing GeS1-xSex (0 ≤ x ≤ 1) nanoplates can be grown by low-pressure rapid physical vapor deposition (LPRPVD), fulfilling a continuously composition-tunable optical bandgap and electronic band structure. By leveraging the synergistic effect of composition-dependent modulation and free-standing growth, GeS1-xSex-based optoelectronic devices exhibit significantly configurable hole mobility from 6.22 × 10-4 to 1.24 cm2V-1s⁻1 and tunable responsivity from 8.6 to 311 A W-1 (635 nm), as x varies from 0 to 1. Furthermore, the polarimetric sensitivity can be tailored from 4.3 (GeS0.29Se0.71) to 1.8 (GeSe) benefiting from alloy engineering. Finally, the tailored imaging capability is also demonstrated to show the application potential of GeS1-xSex alloy nanoplates. This work broadens the functionality of conventional binary materials and motivates the development of tailored polarimetric optoelectronic devices.
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Affiliation(s)
- Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yuan Pan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zhongming Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zhaoqiang Zheng
- College of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Ling Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yiming Sun
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yingbo He
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Quanhao Wang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Tangbiao Cao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zuxin Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Hua Xu
- School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Jingbo Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
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3
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Liu Q, Zhang Z, Zhang F, Yang Y. The Influence of Temperature on the Photoelectric Properties of GeSe Nanowires. Molecules 2024; 29:2860. [PMID: 38930927 PMCID: PMC11206861 DOI: 10.3390/molecules29122860] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/20/2024] [Revised: 06/07/2024] [Accepted: 06/11/2024] [Indexed: 06/28/2024] Open
Abstract
Using physical vapor deposition (PVD) technology, GeSe nanowires were successfully fabricated by heating GeSe powder at temperatures of 500 °C, 530 °C, 560 °C, 590 °C, and 620 °C. The microstructure, crystal morphology, and chemical composition of the resulting materials were thoroughly analyzed employing methods like Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), plus Raman Spectroscopy. Through a series of photoelectric performance tests, it was discovered that the GeSe nanowires prepared at 560 °C exhibited superior properties. These nanowires not only possessed high crystalline quality but also featured uniform diameters, demonstrating excellent consistency. Under illumination at 780 nm, the GeSe nanowires prepared at this temperature showed higher dark current, photocurrent, and photoresponsivity compared to samples prepared at other temperatures. These results indicate that GeSe nanomaterials hold substantial potential in the field of photodetection. Particularly in the visible light spectrum, GeSe nanomaterials exhibit outstanding light absorption capabilities and photoresponse.
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Affiliation(s)
- Qiaoping Liu
- School of Information Science and Technology, Northwest University, Xi’an 710127, China;
- School of Physics and Electronic Information, Yan’an University, Yan’an 716000, China; (F.Z.); (Y.Y.)
| | - Zhiyong Zhang
- School of Information Science and Technology, Northwest University, Xi’an 710127, China;
| | - Fuchun Zhang
- School of Physics and Electronic Information, Yan’an University, Yan’an 716000, China; (F.Z.); (Y.Y.)
| | - Yanning Yang
- School of Physics and Electronic Information, Yan’an University, Yan’an 716000, China; (F.Z.); (Y.Y.)
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4
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Dewan S, Khanikar PD, Mudgal R, Singh A, Muduli PK, Singh R, Das S. Large-Area GeSe Realized Using Pulsed Laser Deposition for Ultralow-Noise and Ultrafast Broadband Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37216628 DOI: 10.1021/acsami.3c02522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Here, we report on the comprehensive growth, characterization, and optoelectronic application of large-area, two-dimensional germanium selenide (GeSe) layers prepared using the pulsed laser deposition (PLD) technique. Back-gated phototransistors based on few-layered 2D GeSe have been fabricated on a SiO2/Si substrate for ultrafast, low noise, and broadband light detection, showing spectral functionalities over a broad wavelength range of 0.4-1.5 μm. The broadband detection capabilities of the device have been attributed to the self-assembled GeOx/GeSe heterostructure and sub-bandgap absorption in GeSe. Besides a high photoresponsivity of 25 AW-1, the GeSe phototransistor displayed a high external quantum efficiency of the order of 6.14 × 103%, a maximum specific detectivity of 4.16 × 1010 Jones, and an ultralow noise equivalent power of 0.09 pW/Hz1/2. The detector has an ultrafast response/recovery time of 3.2/14.9 μs and can show photoresponse up to a high cut-off frequency of 150 kHz. These promising device parameters exhibited by PLD-grown GeSe layers-based detectors make it a favorable choice against present-day mainstream van der Waals semiconductors with limited scalability and optoelectronic compatibility in the visible-to-infrared spectral range.
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Affiliation(s)
- Sheetal Dewan
- School of Interdisciplinary Research, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Prabal Dweep Khanikar
- University of Queensland-IIT Delhi Academy of Research (UQIDAR), Hauz Khas, New Delhi 110016, India
- Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Richa Mudgal
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Avneet Singh
- Department of Physics, Shivaji College, University of Delhi, New Delhi 110027, India
| | - Pranaba Kishor Muduli
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Rajendra Singh
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
- Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Samaresh Das
- Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
- Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
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5
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Qu J, Liu C, Zubair M, Zeng Z, Liu B, Yang X, Luo Z, Yi X, Chen Y, Chen S, Pan A. A universal growth method for high-quality phase-engineered germanium chalcogenide nanosheets. NANOSCALE 2023; 15:4438-4447. [PMID: 36752096 DOI: 10.1039/d2nr05657g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Low-dimensional group IV-VI metal chalcogenide-based semiconductors hold great promise for opto-electronic device applications owing to their diverse crystalline phases and intriguing properties related to thermoelectric and ferroelectric effects. Herein, we demonstrate a universal chemical vapor deposition (CVD) growth method to synthesize stable germanium chalcogenide-based (GeS, GeS2, GeSe, GeSe2) nanosheets, which increases the library of the p-type semiconductor. The phase transition between different crystalline polytypes can be deterministically controlled by hydrogen concentration in the reaction chamber. Structural characterization and synthesis experiments identify the behavior, where the higher hydrogen concentration promotes the transiton from germanium dichalcogenides to germanium monochalcogenides. The angle-polarized and temperature-dependent Raman spectra demonstrate the strong interlayer coupling and lattice orientation. Based on the optimized growth scheme and systematic comparison of electrical properties, GeSe nanosheet photodetectors were demonstrated, which exhibit superior device performance on SiO2/Si and HfO2/Si substrate with a high photoresponsivity up to 104 A W-1, fast response time less than 15 ms, and high mobility of 3.2 cm2 V-1 s-1, which is comparable to the mechanically exfoliated crystals. Our results manifest the hydrogen-mediated deposition strategy as a facile control knob to engineer crystalline phases of germanium chalcogenides for high performance optoelectronic devices.
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Affiliation(s)
- Junyu Qu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Chenxi Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Muhammad Zubair
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Zhouxiaosong Zeng
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Bo Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Xiao Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
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6
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Noh G, Song H, Choi H, Kim M, Jeong JH, Lee Y, Choi MY, Oh S, Jo MK, Woo DY, Jo Y, Park E, Moon E, Kim TS, Chai HJ, Huh W, Lee CH, Kim CJ, Yang H, Song S, Jeong HY, Kim YS, Lee GH, Lim J, Kim CG, Chung TM, Kwak JY, Kang K. Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge 4 Se 9. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204982. [PMID: 36000232 DOI: 10.1002/adma.202204982] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2022] [Revised: 08/12/2022] [Indexed: 06/15/2023]
Abstract
Van der Waals (vdW) heterostructures have drawn much interest over the last decade owing to their absence of dangling bonds and their intriguing low-dimensional properties. The emergence of 2D materials has enabled the achievement of significant progress in both the discovery of physical phenomena and the realization of superior devices. In this work, the group IV metal chalcogenide 2D-layered Ge4 Se9 is introduced as a new selection of insulating vdW material. 2D-layered Ge4 Se9 is synthesized with a rectangular shape using the metalcorganic chemical vapor deposition system using a liquid germanium precursor at 240 °C. By stacking the Ge4 Se9 and MoS2 , vdW heterostructure devices are fabricated with a giant memory window of 129 V by sweeping back gate range of ±80 V. The gate-independent decay time reveals that the large hysteresis is induced by the interfacial charge transfer, which originates from the low band offset. Moreover, repeatable conductance changes are observed over the 2250 pulses with low non-linearity values of 0.26 and 0.95 for potentiation and depression curves, respectively. The energy consumption of the MoS2 /Ge4 Se9 device is about 15 fJ for operating energy and the learning accuracy of image classification reaches 88.3%, which further proves the great potential of artificial synapses.
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Affiliation(s)
- Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
- Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Heenang Choi
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea
| | - Mingyu Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Jae Hwan Jeong
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Korea
| | - Yongjoon Lee
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Min-Yeong Choi
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Saeyoung Oh
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
- Operando Methodology and Measurement Team, Korea Research Institute of Standards & Science (KRISS), Daejeon, 34113, Korea
| | - Dong Yeon Woo
- Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea
| | - Yooyeon Jo
- Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea
| | - Eunpyo Park
- Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea
| | - Eoram Moon
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Woong Huh
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Korea
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Korea
- Advanced Materials Research Division, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea
| | - Cheol-Joo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Senugwoo Song
- Operando Methodology and Measurement Team, Korea Research Institute of Standards & Science (KRISS), Daejeon, 34113, Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Korea
| | - Yong-Sung Kim
- Low-Dimensional Material Team, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea
| | - Jongsun Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea
| | - Chang Gyoun Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea
| | - Taek-Mo Chung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea
| | - Joon Young Kwak
- Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea
- Division of Nanoscience and Technology, Korea University of Science and Technology (UST), Daejeon, 34113, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
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7
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Wu Q, Fang Z, Zhu Y, Song H, Liu Y, Su X, Pan D, Gao Y, Wang P, Yan S, Fei Z, Yao J, Shi Y. Controllable Edge Epitaxy of Helical GeSe/GeS Heterostructures. NANO LETTERS 2022; 22:5086-5093. [PMID: 35613359 DOI: 10.1021/acs.nanolett.2c00395] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Emerging twistronics based on van der Waals (vdWs) materials has attracted great interest in condensed matter physics. Recently, more neoteric three-dimensional (3D) architectures with interlayer twist are realized in germanium sulfide (GeS) crystals. Here, we further demonstrate a convenient way for tailoring the twist rate of helical GeS crystals via tuning of the growth temperature. Under higher growth temperatures, the twist angles between successive nanoplates of the GeS mesowires (MWs) are statistically smaller, which can be understood by the dynamics of the catalyst during the growth. Moreover, we fabricate self-assembled helical heterostructures by introducing germanium selenide (GeSe) onto helical GeS crystals via edge epitaxy. Besides the helical architecture, the moiré superlattices at the twisted interfaces are also inherited. Compared with GeS MWs, helical GeSe/GeS heterostructures exhibit improved electrical conductivity and photoresponse. These results manifest new opportunities in future electronics and optoelectronics by harnessing 3D twistronics based on vdWs materials.
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Affiliation(s)
- Qi Wu
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Zixuan Fang
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China
| | - Yuelei Zhu
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
| | - Haizeng Song
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Yin Liu
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Xin Su
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Danfeng Pan
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Yuan Gao
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Peng Wang
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
| | - Shancheng Yan
- School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China
| | - Zaiyao Fei
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Jie Yao
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Yi Shi
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
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8
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Roy MMD, Omaña AA, Wilson ASS, Hill MS, Aldridge S, Rivard E. Molecular Main Group Metal Hydrides. Chem Rev 2021; 121:12784-12965. [PMID: 34450005 DOI: 10.1021/acs.chemrev.1c00278] [Citation(s) in RCA: 122] [Impact Index Per Article: 40.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
This review serves to document advances in the synthesis, versatile bonding, and reactivity of molecular main group metal hydrides within Groups 1, 2, and 12-16. Particular attention will be given to the emerging use of said hydrides in the rapidly expanding field of Main Group element-mediated catalysis. While this review is comprehensive in nature, focus will be given to research appearing in the open literature since 2001.
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Affiliation(s)
- Matthew M D Roy
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford OX1 3QR, United Kingdom
| | - Alvaro A Omaña
- Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada
| | - Andrew S S Wilson
- Department of Chemistry, University of Bath, Avon BA2 7AY, United Kingdom
| | - Michael S Hill
- Department of Chemistry, University of Bath, Avon BA2 7AY, United Kingdom
| | - Simon Aldridge
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford OX1 3QR, United Kingdom
| | - Eric Rivard
- Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada
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9
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Lee S, Jung JE, Kim HG, Lee Y, Park JM, Jang J, Yoon S, Ghosh A, Kim M, Kim J, Na W, Kim J, Choi HJ, Cheong H, Kim K. γ-GeSe: A New Hexagonal Polymorph from Group IV-VI Monochalcogenides. NANO LETTERS 2021; 21:4305-4313. [PMID: 33970636 DOI: 10.1021/acs.nanolett.1c00714] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The family of group IV-VI monochalcogenides has an atomically puckered layered structure, and their atomic bond configuration suggests the possibility for the realization of various polymorphs. Here, we report the synthesis of the first hexagonal polymorph from the family of group IV-VI monochalcogenides, which is conventionally orthorhombic. Recently predicted four-atomic-thick hexagonal GeSe, so-called γ-GeSe, is synthesized and clearly identified by complementary structural characterizations, including elemental analysis, electron diffraction, high-resolution transmission electron microscopy imaging, and polarized Raman spectroscopy. The electrical and optical measurements indicate that synthesized γ-GeSe exhibits high electrical conductivity of 3 × 105 S/m, which is comparable to those of other two-dimensional layered semimetallic crystals. Moreover, γ-GeSe can be directly grown on h-BN substrates, demonstrating a bottom-up approach for constructing vertical van der Waals heterostructures incorporating γ-GeSe. The newly identified crystal symmetry of γ-GeSe warrants further studies on various physical properties of γ-GeSe.
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Affiliation(s)
- Sol Lee
- Department of Physics, Yonsei University, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
| | - Joong-Eon Jung
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Han-Gyu Kim
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Yangjin Lee
- Department of Physics, Yonsei University, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
| | - Je Myoung Park
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Jeongsu Jang
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Sangho Yoon
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
| | - Arnab Ghosh
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Minseol Kim
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Joonho Kim
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Woongki Na
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Jonghwan Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
| | | | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
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10
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Zuo N, Nie A, Hu C, Shen W, Jin B, Hu X, Liu Z, Zhou X, Zhai T. Synergistic Additive-Assisted Growth of 2D Ternary In 2 SnS 4 with Giant Gate-Tunable Polarization-Sensitive Photoresponse. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2008078. [PMID: 33760364 DOI: 10.1002/smll.202008078] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2020] [Revised: 02/01/2021] [Indexed: 06/12/2023]
Abstract
2D ternary materials exhibit great promise in the field of polarization-sensitive photodetectors due to the low-symmetry crystal structure. However, the realization of ternary material growth is still a huge challenge because of the complex reaction process. Here, for the first time, 2D ternary In2 SnS4 flakes are obtained via synergistic additive of salt and molecular sieve-assisted chemical vapor deposition. Raman vibration mode of In2 SnS4 flakes exhibits polarization-dependent properties. The polarization-resolved absorption spectroscopy and azimuth-dependent reflectance difference microscopy further confirm its anisotropy of in-plane optical absorption and reflection. Besides, the In2 SnS4 flake based device on mica shows ultrafast rising and decay rates of ≈20 and 20 µs. Impressively, In2 SnS4 flake based phototransistor demonstrates giant gate-tunable polarization-sensitive photoresponse: the dichroic ratio can be adjusted in the range of 1.13-1.70 with gate voltage varying from -35-35 V. This work provides an effective means for modulating the polarization-sensitive photoresponse, which may significantly promote the research progress of polarization-sensitive photodetectors.
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Affiliation(s)
- Nian Zuo
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Anmin Nie
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Chunguang Hu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, P. R. China
| | - Wanfu Shen
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, P. R. China
| | - Bao Jin
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Xiaozong Hu
- Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Zhongyuan Liu
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
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11
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Huang TA, Zacharias M, Lewis DK, Giustino F, Sharifzadeh S. Exciton-Phonon Interactions in Monolayer Germanium Selenide from First Principles. J Phys Chem Lett 2021; 12:3802-3808. [PMID: 33848154 DOI: 10.1021/acs.jpclett.1c00264] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We investigate from first principles exciton-phonon interactions in monolayer germanium selenide, a direct gap two-dimensional semiconductor. By combining the Bethe-Salpeter approach and the special displacement method, we explore the phonon-induced renormalization of the exciton wave functions, excitation energies, and oscillator strengths. We determine a renormalization of the optical gap of 0.1 eV at room temperature, which results from the coupling of the exciton with both acoustic and optical phonons, with the strongest coupling to optical phonons at ∼100 cm-1. We also find that the exciton-phonon interaction is similar between monolayer and bulk GeSe. Overall, we demonstrate that the combination of many-body perturbation theory and special displacements offers a new route to investigate electron-phonon couplings in excitonic spectra, the resulting band gap renormalization, and the nature of phonons that couple to the exciton.
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Affiliation(s)
- Tianlun Allan Huang
- Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States
| | - Marios Zacharias
- Department of Mechanical and Materials Science Engineering, Cyprus University of Technology, P.O. Box 50329, 3603 Limassol, Cyprus
| | - D Kirk Lewis
- Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215, United States
| | - Feliciano Giustino
- Oden Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, Texas 78712, United States
- Department of Physics, The University of Texas at Austin, Austin, Texas78712, United States
| | - Sahar Sharifzadeh
- Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States
- Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215, United States
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12
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Yang Y, Liu SC, Li Z, Xue DJ, Hu JS. In-plane anisotropic 2D Ge-based binary materials for optoelectronic applications. Chem Commun (Camb) 2021; 57:565-575. [DOI: 10.1039/d0cc04476h] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
In-plane anisotropic two-dimensional (2D) materials possess unique in-plane anisotropic physical properties arising from their low crystal lattice symmetry.
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Affiliation(s)
- Yusi Yang
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Shun-Chang Liu
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Zongbao Li
- School of Material and Chemical Engineering
- Tongren University
- Tongren 554300
- China
- National Engineering Research Center for Advanced Polymer Processing Technology
| | - Ding-Jiang Xue
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Jin-Song Hu
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
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13
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Song C, Noh G, Kim TS, Kang M, Song H, Ham A, Jo MK, Cho S, Chai HJ, Cho SR, Cho K, Park J, Song S, Song I, Bang S, Kwak JY, Kang K. Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics. ACS NANO 2020; 14:16266-16300. [PMID: 33301290 DOI: 10.1021/acsnano.0c06607] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
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Affiliation(s)
- Chanwoo Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seorin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Kiwon Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Intek Song
- Department of Applied Chemistry, Andong National University, Andong 36728, Korea
| | - Sunghwan Bang
- Materials & Production Engineering Research Institute, LG Electronics, Pyeongtaek-si 17709, Korea
| | - Joon Young Kwak
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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14
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Sarkar AS, Stratakis E. Recent Advances in 2D Metal Monochalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001655. [PMID: 33173730 PMCID: PMC7610304 DOI: 10.1002/advs.202001655] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/04/2020] [Revised: 07/24/2020] [Indexed: 06/11/2023]
Abstract
The family of emerging low-symmetry and structural in-plane anisotropic two-dimensional (2D) materials has been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene analog group IVA-VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in-plane anisotropic electronic and optical response, earth abundance, and environmentally friendly characteristics. In this article, the recent research advancements in the field of anisotropic 2D MMCs are reviewed. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The Review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics, and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this Review also delineates the existing limitations and discusses emerging possibilities and future prospects.
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Affiliation(s)
- Abdus Salam Sarkar
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
| | - Emmanuel Stratakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
- Physics DepartmentUniversity of CreteHeraklionCrete710 03Greece
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15
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Bianca G, Zappia MI, Bellani S, Sofer Z, Serri M, Najafi L, Oropesa-Nuñez R, Martín-García B, Hartman T, Leoncino L, Sedmidubský D, Pellegrini V, Chiarello G, Bonaccorso F. Liquid-Phase Exfoliated GeSe Nanoflakes for Photoelectrochemical-Type Photodetectors and Photoelectrochemical Water Splitting. ACS APPLIED MATERIALS & INTERFACES 2020; 12:48598-48613. [PMID: 32960559 PMCID: PMC8011798 DOI: 10.1021/acsami.0c14201] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2020] [Accepted: 09/22/2020] [Indexed: 05/29/2023]
Abstract
Photoelectrochemical (PEC) systems represent powerful tools to convert electromagnetic radiation into chemical fuels and electricity. In this context, two-dimensional (2D) materials are attracting enormous interest as potential advanced photo(electro)catalysts and, recently, 2D group-IVA metal monochalcogenides have been theoretically predicted to be water splitting photocatalysts. In this work, we use density functional theory calculations to theoretically investigate the photocatalytic activity of single-/few-layer GeSe nanoflakes for both the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) in pH conditions ranging from 0 to 14. Our simulations show that GeSe nanoflakes with different thickness can be mixed in the form of nanoporous films to act as nanoscale tandem systems, in which the flakes, depending on their thickness, can operate as HER- and/or OER photocatalysts. On the basis of theoretical predictions, we report the first experimental characterization of the photo(electro)catalytic activity of single-/few-layer GeSe flakes in different aqueous media, ranging from acidic to alkaline solutions: 0.5 M H2SO4 (pH 0.3), 1 M KCl (pH 6.5), and 1 M KOH (pH 14). The films of the GeSe nanoflakes are fabricated by spray coating GeSe nanoflakes dispersion in 2-propanol obtained through liquid-phase exfoliation of synthesized orthorhombic (Pnma) GeSe bulk crystals. The PEC properties of the GeSe nanoflakes are used to design PEC-type photodetectors, reaching a responsivity of up to 0.32 AW-1 (external quantum efficiency of 86.3%) under 455 nm excitation wavelength in acidic electrolyte. The obtained performances are superior to those of several self-powered and low-voltage solution-processed photodetectors, approaching that of self-powered commercial UV-Vis photodetectors. The obtained results inspire the use of 2D GeSe in proof-of-concept water photoelectrolysis cells.
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Affiliation(s)
- Gabriele Bianca
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, via Dodecaneso 31, 16146 Genoa, Italy
| | - Marilena I. Zappia
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C 87036 Rende, Cosenza, Italy
| | | | - Zdeněk Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Michele Serri
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Leyla Najafi
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
| | - Reinier Oropesa-Nuñez
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
- Department
of Materials Science and Engineering, Uppsala
University, Box 534, 75121 Uppsala, Sweden
| | - Beatriz Martín-García
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- CIC
nanoGUNE, 20018 Donostia-San Sebastian, Spain
| | - Tomáš Hartman
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Luca Leoncino
- Electron
Microscopy Facility, Istituto Italiano di
Tecnologia, via Morego 30, 16163 Genova, Italy
| | - David Sedmidubský
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Vittorio Pellegrini
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
| | - Gennaro Chiarello
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C 87036 Rende, Cosenza, Italy
| | - Francesco Bonaccorso
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
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16
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Yumigeta K, Brayfield C, Cai H, Hajra D, Blei M, Yang S, Shen Y, Tongay S. The synthesis of competing phase GeSe and GeSe 2 2D layered materials. RSC Adv 2020; 10:38227-38232. [PMID: 35517551 PMCID: PMC9057377 DOI: 10.1039/d0ra07539f] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/24/2020] [Accepted: 09/25/2020] [Indexed: 11/21/2022] Open
Abstract
We demonstrate the synthesis of layered anisotropic semiconductor GeSe and GeSe2 nanomaterials through low temperature (∼400 °C) and atmospheric pressure chemical vapor deposition using halide based precursors. Results show that GeI2 and H2Se precursors successfully react in the gas-phase and nucleate on a variety of target substrates including sapphire, Ge, GaAs, or HOPG. Layer-by-layer growth takes place after nucleation to form layered anisotropic materials. Detailed SEM, EDS, XRD, and Raman spectroscopy measurements together with systematic CVD studies reveal that the substrate temperature, selenium partial pressure, and the substrate type ultimately dictate the resulting stoichiometry and phase of these materials. Results from this work introduce the phase control of Ge and Se based nanomaterials (GeSe and GeSe2) using halide based CVD precursors at ATM pressures and low temperatures. Overall findings also extend our fundamental understanding of their growth by making the first attempt to correlate growth parameters to resulting competing phases of Ge–Se based materials. We report the synthesis of layered anisotropic semiconductor GeSe and GeSe2 nanomaterials through low temperature and atmospheric pressure chemical vapor deposition using halide based precursors. The crystal phase is controlled by simply changing selenium vapor pressure.![]()
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Affiliation(s)
- Kentaro Yumigeta
- Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University Tempe AZ 85287 USA
| | - Cassondra Brayfield
- Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University Tempe AZ 85287 USA
| | - Hui Cai
- Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University Tempe AZ 85287 USA
| | - Debarati Hajra
- Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University Tempe AZ 85287 USA
| | - Mark Blei
- Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University Tempe AZ 85287 USA
| | - Sijie Yang
- Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University Tempe AZ 85287 USA
| | - Yuxia Shen
- Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University Tempe AZ 85287 USA
| | - S Tongay
- Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University Tempe AZ 85287 USA
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17
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Li G, Wang X, Han B, Zhang W, Qi S, Zhang Y, Qiu J, Gao P, Guo S, Long R, Tan Z, Song XZ, Liu N. Direct Growth of Continuous and Uniform MoS 2 Film on SiO 2/Si Substrate Catalyzed by Sodium Sulfate. J Phys Chem Lett 2020; 11:1570-1577. [PMID: 32013437 DOI: 10.1021/acs.jpclett.9b03879] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Because of its unique electronic band structure, molybdenum disulfide (MoS2) has been regarded as a star semiconducting material. However, direct growth of continuous and high-quality MoS2 films on SiO2/Si substrates is still very challenging. Here, we report a facile chemical vapor deposition (CVD) method based on synergistic modulation of precursor and Na2SO4 catalysis, realizing the centimeter scale growth of a continuous MoS2 film on SiO2/Si substrates. The as-grown MoS2 film had an excellent spatial homogeneity and crystal quality, with an edge length of the composite domain as large as 632 μm. Both experimental and theoretical results proved that Na tended to bond with SiO2 substrates rather than to interfere with as-grown MoS2. Thus, they showed decent and uniform electrical performance, with electron mobilities as high as 5.9 cm2 V-1 s-1. We believe our method will pave a new way for MoS2 toward real application in modern electronics.
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Affiliation(s)
- Guanmeng Li
- State Key Laboratory of Fine Chemicals, Panjin Branch of School of Chemical Engineering , Dalian University of Technology , 2 Dagong Road , Liaodongwan New District, Panjin 124221 , Liaoning , China
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Xiaoli Wang
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education , Beijing Normal University , Beijing 100875 , China
| | - Bo Han
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics , Peking University , Beijing 100871 , China
| | - Weifeng Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Shuyan Qi
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Yan Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Jiakang Qiu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Peng Gao
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics , Peking University , Beijing 100871 , China
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , China
| | - Shaoshi Guo
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education , Beijing Normal University , Beijing 100875 , China
| | - Zhenquan Tan
- State Key Laboratory of Fine Chemicals, Panjin Branch of School of Chemical Engineering , Dalian University of Technology , 2 Dagong Road , Liaodongwan New District, Panjin 124221 , Liaoning , China
| | - Xue-Zhi Song
- State Key Laboratory of Fine Chemicals, Panjin Branch of School of Chemical Engineering , Dalian University of Technology , 2 Dagong Road , Liaodongwan New District, Panjin 124221 , Liaoning , China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , China
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