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Perveen A, Movsesyan A, Abubakar SM, Saeed F, Hussain S, Raza A, Xu Y, Subramanian A, Khan Q, Lei W. In-situ Fabricated and Plasmonic Enhanced MACsPbBr3-Polymer Composite Perovskite Film Based UV Photodetector. J Mol Struct 2023. [DOI: 10.1016/j.molstruc.2023.134962] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
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2
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Zhang Z, Lamers N, Sun C, Hetherington C, Scheblykin IG, Wallentin J. Free-Standing Metal Halide Perovskite Nanowire Arrays with Blue-Green Heterostructures. NANO LETTERS 2022; 22:2941-2947. [PMID: 35325539 PMCID: PMC9011394 DOI: 10.1021/acs.nanolett.2c00137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/12/2022] [Revised: 03/18/2022] [Indexed: 06/14/2023]
Abstract
Vertically aligned metal halide perovskite (MHP) nanowires are promising for various optoelectronic applications, which can be further enhanced by heterostructures. However, present methods to obtain free-standing vertically aligned MHP nanowire arrays and heterostructures lack the scalability needed for applications. We use a low-temperature solution process to prepare free-standing vertically aligned green-emitting CsPbBr3 nanowires from anodized aluminum oxide templates. The length is controlled from 1 to 20 μm by the precursor amount. The nanowires are single-crystalline and exhibit excellent photoluminescence, clear light guiding and high photoconductivity with a responsivity of 1.9 A/W. We demonstrate blue-green heterostructured nanowire arrays by converting the free-standing part of the nanowires to CsPbCl1.1Br1.9 in an anion exchange process. Our results demonstrate a scalable, self-aligned, and lithography-free approach to achieve high quality free-standing MHP nanowires arrays and heterostructures, offering new possibilities for optoelectronic applications.
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Affiliation(s)
- Zhaojun Zhang
- Synchrotron
Radiation Research and NanoLund, Department of Physics, Lund University, Box 124, Lund 22100, Sweden
| | - Nils Lamers
- Synchrotron
Radiation Research and NanoLund, Department of Physics, Lund University, Box 124, Lund 22100, Sweden
| | - Chen Sun
- Chemical
Physics and NanoLund, Department of Chemistry, Lund University, Box 124, Lund 22100, Sweden
| | - Crispin Hetherington
- Centre
for Analysis and Synthesis and NanoLund, Department of Chemistry, Lund University, Box 124, Lund 22100, Sweden
| | - Ivan G. Scheblykin
- Chemical
Physics and NanoLund, Department of Chemistry, Lund University, Box 124, Lund 22100, Sweden
| | - Jesper Wallentin
- Synchrotron
Radiation Research and NanoLund, Department of Physics, Lund University, Box 124, Lund 22100, Sweden
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Solution processed and highly efficient UV-photodetector based on CsPbBr3 perovskite-polymer composite film. J Photochem Photobiol A Chem 2022. [DOI: 10.1016/j.jphotochem.2021.113764] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
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Lu Y, Dong J, Huo X, Wei D, Qiao B, Zhao S, Song D, Xu Z. Device performance improvements in all-inorganic perovskite light-emitting diodes: the role of binary ammonium cation terminals. Phys Chem Chem Phys 2022; 24:6208-6214. [PMID: 35229093 DOI: 10.1039/d2cp00035k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
All-inorganic perovskites, like CsPbBr3, have gained particular concern due to their excellent material stability. However, aside from the general defect issue in perovskite materials, all-inorganic perovskites also suffer from poor film quality, leading to low device efficiency, especially of perovskite light-emitting diodes (PeLEDs) employing a thin perovskite film as the emission layer. Herein, 1,4-phenyldimethylammonium dibromide (phDMADBr), which has ammonium cations (NH3+) on both terminals, is introduced as the additive in the precursor solution. It is proved that phDMADBr can improve the film coverage; meanwhile, it also presents a more intense passivation effect on point defects than a similar additive with a single NH3+ terminal. As demonstrated by density functional theory (DFT) calculations, phDMADBr tends to anchor onto the Br-dangling bond with both NH3+ tails and enhances the adhesion to the perovskite grain surface. The exposed hydrophobic aryl also protects the perovskite from detrimental environmental factors. Correspondingly, the maximum luminance (Lmax), current efficiency (CE), and device stability of the PeLEDs are enhanced. This work offers special guidance for screening passivation additives for inorganic perovskites.
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Affiliation(s)
- Yao Lu
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China. .,Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Jie Dong
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China. .,Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Xiaomin Huo
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China. .,Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Dong Wei
- College of Physics and Energy, Fujian Normal University, Fuzhou, 350117, China
| | - Bo Qiao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China. .,Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Suling Zhao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China. .,Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Dandan Song
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China. .,Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Zheng Xu
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China. .,Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China.
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Zhu W, Deng M, Chen D, Zhang Z, Chai W, Chen D, Xi H, Zhang J, Zhang C, Hao Y. Dual-Phase CsPbCl 3-Cs 4PbCl 6 Perovskite Films for Self-Powered, Visible-Blind UV Photodetectors with Fast Response. ACS APPLIED MATERIALS & INTERFACES 2020; 12:32961-32969. [PMID: 32610900 DOI: 10.1021/acsami.0c09910] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
All-inorganic, Cl-based perovskites are promising for visible-blind UV photodetectors (PDs), particularly the self-powered ones. However, the devices are rarely reported until now since the low solubility of raw materials hinders significantly the thickness and electronic quality of solution-processed Cl-based perovskite films. Herein, we demonstrate a simple intermediate phase halide exchange method to prepare desired dual-phase CsPbCl3-Cs4PbCl6 films. It is achieved by spin-coating of a certain dose of CH3NH3Cl/CsCl solution onto a CsI-PbBr2-dimethyl sulfoxide (DMSO) intermediate phase film, followed by thermal annealing. The inclusion of CsCl species in the solution is crucial to a stable dual-phase CsPbCl3-Cs4PbCl6 film, while a high annealing temperature contributes to improving its quality. Therefore, the dual-phase CsPbCl3-Cs4PbCl6 film with an absorption onset of ∼420 nm, microsized grains, a few defects, and a proper work function is obtained by optimizing the annealing temperature. The final self-powered, visible-blind UV PD exhibits the superior performance, including a favored response range of 310-420 nm, a high responsivity (R) peak value of 61.8 mA W-1, an exceptional specific detectivity (D*) maximum of 1.35 × 1012 Jones, and a particularly fast response speed of 2.1/5.3 μs, together with amazing operational stability. This work represents the first demonstration of solution-processed, self-powered, visible-blind UV PDs with all-inorganic, Cl-based perovskite films.
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Affiliation(s)
- Weidong Zhu
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - Minyu Deng
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - Dandan Chen
- College of Science, Xi'an Shiyou University, Xi'an, Shaanxi 710065, China
| | - Zeyang Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - Wenming Chai
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - Dazheng Chen
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - He Xi
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - Jincheng Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - Chunfu Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
| | - Yue Hao
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
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Zhang Z, Zhang W, Jiang Q, Wei Z, Deng M, Chen D, Zhu W, Zhang J, You H. Toward High-Performance Electron/Hole-Transporting-Layer-Free, Self-Powered CsPbIBr 2 Photodetectors via Interfacial Engineering. ACS APPLIED MATERIALS & INTERFACES 2020; 12:6607-6614. [PMID: 31927909 DOI: 10.1021/acsami.9b19075] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Self-powered photodetectors (PDs) with inorganic lead halide perovskites hold multiple traits of high sensitivity, fast response, independence from external power supply, and excellent sustainability and stability, thus holding a great promise for practical applications. However, they generally contain high-temperature-processed electron-transporting layers (ETLs) and high-cost, unstable hole-transporting layers (HTLs) coupled with noble metal electrodes, which bring significant obstacles of production cost and stability for their potential commercialization. Herein, we demonstrate the building of high-performance HTL/ETL-free, self-powered CsPbIBr2 PD with simplified architecture of fluorine-doped tin oxide (FTO)/CsPbIBr2/carbon upon interfacial modification by polyethyleneimine (PEI). The optimized PD yields a dark current of 2.03 × 10-9 A, peak responsivity (R) of 0.32 A/W, maximum specific detectivity (D*) of 3.74 × 1012 Jones, and response time of 1.21 μs. These figures of merit are far beyond those of the one prepared without PEI modification and even the PD containing TiO2 ETL. Hence, our work suggests a highly feasible route to develop self-powered PDs with significantly simplified fabrication and a reduced production cost.
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Affiliation(s)
- Zeyulin Zhang
- Guangxi Key Laboratory of Optoelectronic Information Processing, School of Electronic Engineering and Automation , Guilin University of Electronic Technology , Guilin , Guangxi 541004 , China
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics , Xidian University , Xi'an , Shanxi 710071 , China
| | - Wentao Zhang
- Guangxi Key Laboratory of Optoelectronic Information Processing, School of Electronic Engineering and Automation , Guilin University of Electronic Technology , Guilin , Guangxi 541004 , China
| | - Qubo Jiang
- Guangxi Key Laboratory of Optoelectronic Information Processing, School of Electronic Engineering and Automation , Guilin University of Electronic Technology , Guilin , Guangxi 541004 , China
| | - Ziming Wei
- Guangxi Key Laboratory of Optoelectronic Information Processing, School of Electronic Engineering and Automation , Guilin University of Electronic Technology , Guilin , Guangxi 541004 , China
| | - Mingyu Deng
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics , Xidian University , Xi'an , Shanxi 710071 , China
| | - Dandan Chen
- College of Science , Xi'an Shiyou University , Xi'an , Shaanxi 710065 , China
| | - Weidong Zhu
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics , Xidian University , Xi'an , Shanxi 710071 , China
| | - Jincheng Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics , Xidian University , Xi'an , Shanxi 710071 , China
| | - Hailong You
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics , Xidian University , Xi'an , Shanxi 710071 , China
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Flux-mediated growth strategy enables low-temperature fabrication of high-efficiency all-inorganic CsPbIBr2 perovskite solar cells. Electrochim Acta 2020. [DOI: 10.1016/j.electacta.2019.135325] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
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