Manipulation of Oxygen Vacancy for High Photovoltaic Output in Bismuth Ferrite Films

Photovoltaic Effect of La and Mn Co-Doped BiFeO3 Heterostructure with Charge Transport Layers

Bismuth ferrite BiFeO3 (BFO)-based ferroelectrics have great potential as inorganic perovskite-like oxides for future solar cells applications due to their unique physical properties. In this work, La and Mn co-doped BFO thin films with compositions Bi0.9La0.1(Fe1-xMnx)O3 (x = 0, 0.05, 0.1, 0.15) (denoted as BLF, BLFM5, BLFM10, BLFM15, respectively) were prepared via a sol-gel technique on indium tin oxide (ITO) glass. All the films are monophasic, showing good crystallinity. The optical bandgap Eg was found to decrease monotonously with an increase in the Mn doping amount. Compared with other compositions, the BLFM5 sample exhibits a better crystallinity and less oxygen vacancies as indicated by XRD and XPS measurements, thereby achieving a better J-V performance. Based on BLFM5 as the light absorbing layer, the ITO/ZnO/BLFM5/Pt and ITO/ZnO/BLFM5/NiO/Pt heterostructure devices were designed and characterized. It was found that the introduction of the ZnO layer increases both the open circuit voltage (Voc) and the short circuit current density (Jsc) with Voc = 90.2 mV and Jsc = 6.90 μA/cm2 for the Pt/ BLFM5/ZnO/ITO device. However, the insertion of the NiO layer reduces both Voc and Jsc, which is attributed to the weakened built-in electric field at the NiO/BLFM5 interface.

Polarization Alignment in Polycrystalline BiFeO3 Photoelectrodes for Tunable Band Bending

Polarization in a semiconductor can modulate the band bending via the depolarization electric field (EdP), subsequently tuning the charge separation and transfer (CST) process in photoelectrodes. However, the random orientation of dipole moments in many polycrystalline semiconductor photoelectrodes leads to negligible polarization effect. How to effectively align the dipole moments in polycrystalline photoelectrodes into the same direction to maximize the polarization is still to be developed. Herein, we report that the dipole moments in a ferroelectric BiFeO3 photoelectrode can be controlled under external poling, resulting in a tunable CST efficiency. A negative bias of -40 voltage (V) poling to the photoelectrode leads to an over 110% increase of the CST efficiency, while poling at +40 V, the CST efficiency is reduced to only 41% of the original value. Furthermore, a nearly linear relationship between the external poling voltage and surface potential is discovered. The findings here provide an effective method in tuning the band bending and charge transfer of the emerging ferroelectricity driven solar energy conversion.

Spinel ferrite nanoparticles as potential materials in chlorophenol removal from wastewater

Persistent organic pollutants (POPs) including chlorophenols (CPs) are increasing in water effluents, creating serious problems for both aquatic and terrestrial lives. Several research attempts have considered the removal of CPs by functionalised nanomaterials as adsorbents and catalysts. Besides the unique crystal structure, spinel ferrite nanomaterials (SFNs) own interesting optical and magnetic properties that give them the potential to be utilised in the removal of different types of CPs. In this review, we highlighted the recent research work that focused on the application of SFNs in the removal of different CP substances based on the number of chlorine atom attached to the phenolic compound. We have also discussed the structure and properties of SFN along with their numerous characterisation tools. We demonstrated the importance of identifying the structure, surface area, porosity, optical properties, etc. in the efficiency of the SFN during the CP removal process. The reviewed research efforts applied photocatalysis, wet peroxide oxidation (WPO), persulfate activated oxidation and adsorption. The studies presented different paths of enhancing the SFN ability to remove the CPs including doping (ion substitution), oxide composite structure and polymer composite structure. Experimental parameters such as temperature, dosage of CPs and SFN structure have shown to have a major effect in the CP removal efficiency. More attention is needed to investigate the different properties of SFN that can be tailored through different techniques and expected to have major role in the removal mechanism of CPs.

Spray pyrolysis-derived robust ferroelectric BiFeO3 thin films

Scalable and low-cost synthesis of high-quality ferroic films is critical for the development of advanced electronic devices and sensors. Here, we employ solution-based spray pyrolysis to fabricate bismuth ferrite thin films on glass substrates and explore the impact of annealing conditions to attain functional thin films of superior quality and switchable polarization. Optimised thin films display polycrystalline nanostructured grains with the highest X-ray diffraction intensity along the (110) orientation and a mixed Fe2+/3+ valence suggesting the presence of oxygen vacancies. The optimized films show a complex ferroelectric domain microstructure and exhibit robust nanoscale polarization switching in the range of several volts. Domains are found to scale with the sizes of nanocrystalline grains, which points to the role of surface-energy-related mechanisms affecting the domain patterns. Our results demonstrate the potential of spray pyrolysis for the fabrication of high-quality ferroelectric thin films and provide new opportunities for the development of low-cost scalable advanced electronic devices.

BiFeO3 photocathodes for efficient H2O2 production via charge carrier dynamics engineering

Metal oxide semiconductors are promising candidate photoelectrodes for photoelectrochemical H₂O₂ production if the issues of poor efficiency and selectivity can be resolved. An unfavorable charge transport barrier causes poor carrier collection and kinetics, limiting their efficiency and selectivity. Herein, BiFeO₃ was used as the model photocathode, and its interfacial charge transport barrier between fluorine-doped tin oxide substrates was modulated by introducing a LaNiO₃ layer as the charge collection layer. Our findings show the significantly enhanced photoelectrochemical activity of the composite photocathode with an improved photocurrent by three times (-0.9 mA cm^-2 at 0.6 V vs. RHE) and the H₂O₂ formation up to 278 μmol L^-1 with doubled faradaic efficiency. It is shown that these enhancements are due to the promoted charge carrier collection and kinetics. This work demonstrates the significant role of the charge collection layer in improving the collection and usage of photocarriers to accelerate the application of solar-to-fuel conversion.

XPS Study in BiFeO3 Surface Modified by Argon Etching

This paper reports an XPS surface study of pure phase BiFeO3 thin film produced and later etched by pure argon ions. Analysis of high-resolution spectra from Fe 2p, Bi 4f and 5d, O 1s, and the valence band, exhibited mainly Fe3+ and Bi3+ components, but also reveal Fe2+. High-energy argon etching induces the growth of Fe(0) and Bi(0) and an increment of Fe2+, as expected. The BiFeO3 semiconductor character is preserved despite the oxygen loss, an interesting aspect for the study of the photovoltaic effect through oxygen vacancies in some ceramic films. The metal-oxygen bonds in O 1s spectra are related only to one binding energy contrary to the split from bismuth and iron reported in other works. All these data evidence that the low-pressure argon atmosphere is proved to be efficient to produce pure phase BiFeO3, even after argon etching.

Integrating Band Engineering and the Flexoelectric Effect Induced by a Composition Gradient for High Photocurrent Density in Bismuth Ferrite Films

Photovoltaic energy as one of the important alternatives to traditional fossil fuels has always been a research hot spot in the field of renewable and clean solar energy. Very recently, the anomalous ferroelectric photovoltaic effect in multiferroic bismuth ferrite (BiFeO₃) has attracted much attention due to the above-bandgap photovoltage and switchable photocurrent. However, its photocurrent density mostly in the magnitudes of μA/cm² resulted in a poor power conversion efficiency, which severely hampered its practical application as a photovoltaic device. In this case, a novel approach was designed to improve the photocurrent density of BiFeO₃ through the cooperative effect of the gradient distribution of oxygen vacancies and consequently induced the flexoelectric effect realized in the (La, Co) gradient-doped BiFeO₃ multilayers. Subsequent results and analysis indicated that the photocurrent density of the gradient-doped multilayer BiFeO₃ sample was nearly 3 times as much as that of the conventional doped single-layer sample. Furthermore, a possible mechanism was proposed herein to demonstrate roles of band engineering and the flexoelectric effect on the photovoltaic performance of the gradient-doped BiFeO₃ film.

Controllable Distribution and Reversible Migration of Charges in BiFeO3-Based Films on Si Substrates

In ferroelectric-based integrated devices, there are usually buffer layers between ferroelectric films and semiconductor substrates. Here, Bi_x%FeO_3-δ (x = 95, 100, and 105) (BFOx) films are prepared directly on n-Si substrates by the sol-gel method, and the variation of the hysteresis loops with Bi content and heat treatment is investigated. With the help of the dielectric measurement and the composition analysis, a PN heterojunction is believed to exist at the BFOx/Si interface. The Bi/Fe ratio determines not only the type and concentration of charged defects in the films but also the height of the interface barrier and its binding effect on mobile charges. Furthermore, the distribution and the migration of charges can be regulated reversibly by heat treatment. This work reveals the interaction between ferroelectric films and semiconductor substrates, providing an important reference for the design and application of ferroelectric/semiconductor heterostructures.

Investigation of Local Conduction Mechanisms in Ca and Ti-Doped BiFeO3 Using Scanning Probe Microscopy Approach

In this work we demonstrate the role of grain boundaries and domain walls in the local transport properties of n- and p-doped bismuth ferrites, including the influence of these singularities on the space charge imbalance of the energy band structure. This is mainly due to the charge accumulation at domain walls, which is recognized as the main mechanism responsible for the electrical conductivity in polar thin films and single crystals, while there is an obvious gap in the understanding of the precise mechanism of conductivity in ferroelectric ceramics. The conductivity of the Bi_0.95Ca_0.05Fe_1−xTi_xO_3−δ (x = 0, 0.05, 0.1; δ = (0.05 − x)/2) samples was studied using a scanning probe microscopy approach at the nanoscale level as a function of bias voltage and chemical composition. The obtained results reveal a distinct correlation between electrical properties and the type of charged defects when the anion-deficient (x = 0) compound exhibits a three order of magnitude increase in conductivity as compared with the charge-balanced (x = 0.05) and cation-deficient (x = 0.1) samples, which is well described within the band diagram representation. The data provide an approach to control the transport properties of multiferroic bismuth ferrites through aliovalent chemical substitution.

Maximizing Short Circuit Current Density and Open Circuit Voltage in Oxygen Vacancy-Controlled Bi1-xCaxFe1-yTiyO3-δ Thin-Film Solar Cells

Designing solid-state perovskite oxide solar cells with large short circuit current (J_SC) and open circuit voltage (V_OC) has been a challenging problem. Epitaxial BiFeO₃ (BFO) films are known to exhibit large V_OC (>50 V). However, they exhibit low J_SC (≪μA/cm²) under 1 Sun illumination. In this work, taking polycrystalline BiFeO₃ thin films, we demonstrate that oxygen vacancies (V_O) present within the lattice and at grain boundary (GB) can explicitly be controlled to achieve high J_SC and V_OC simultaneously. While aliovalent substitution (Ca²⁺ at Bi³⁺ site) is used to control the lattice V_O, Ca and Ti cosubstitution is used to bring out only GB-V_O. Fluorine-doped tin oxide (FTO)/Bi_1-xCa_xFe_1-yTi_yO_3-δ/Au devices are tested for photovoltaic characteristics. Introducing V_O increases the photocurrent by four orders (J_SC ∼ 3 mA/cm²). On the contrary, V_OC is found to be <0.5 V, as against 0.5-3 V observed for the pristine BiFeO₃. Ca and Ti cosubstitution facilitate the formation of smaller crystallites, which in turn increase the GB area and thereby the GB-V_O. This creates defect bands occupying the bulk band gap, as inferred from the diffused reflection spectra and band structure calculations, leading to a three-order increase in J_SC. The cosubstitution, following a charge compensation mechanism, decreases the lattice V_O concentration significantly to retain the ferroelectric nature with enhanced polarization. It helps to achieve V_OC (3-8 V) much larger than that of BiFeO₃ (0.5-3 V). It is noteworthy that as Ca substitution maintains moderate crystallite size, the lattice V_O concentration dominates GB-V_O concentration. Notwithstanding, both lattice and GB-V_O contribute to the increase in J_SC; the former weakens ferroelectricity, and as a consequence, undesirably, V_OC is lowered well below 0.5 V. Using optimum J_SC and V_OC, we demonstrate that the efficiency ∼0.22% can be achieved in solid-state BFO solar cells under AM 1.5 one Sun illumination.