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Soni A, Ghosal S, Kundar M, Pati SK, Pal SK. Long-Lived Interlayer Excitons in WS 2/Ruddlesden-Popper Perovskite van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2024; 16:35841-35851. [PMID: 38935613 DOI: 10.1021/acsami.4c07346] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) and perovskites hold substantial promise for various optoelectronic applications such as light emission, photodetection, and energy harvesting. However, each of these materials possesses certain limitations that can be overcome by synergistically combining them to form heterostructures, thereby unveiling intriguing optical properties. In this study, we present an uncomplicated technique for crafting a van der Waals (vdW) heterojunction comprising monolayer WS2 and a Ruddlesden-Popper (RP) perovskite, namely (TEA)2PbI4. By utilizing ultrafast transient absorption (TA) spectroscopy, we explored the charge carrier dynamics within the WS2/(TEA)2PbI4 heterostructure. Our findings uncover a type-II band alignment in the heterostructure, facilitating rapid (within 260 fs) hole transfer from WS2 to the perovskite and leading to the formation of interlayer excitons (IXs) with a much longer lifetime (728 ps). This strategic approach has the potential to contribute to the development of hybrid systems aimed at achieving high-performance optoelectronic devices.
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Affiliation(s)
- Ashish Soni
- School of Physical Sciences, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India
- Advanced Materials Research Centre, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India
| | - Supriya Ghosal
- Theoretical Sciences Unit, School of Advanced Materials (SAMat), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Bangalore 560064, India
| | - Milon Kundar
- School of Physical Sciences, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India
- Advanced Materials Research Centre, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India
| | - Swapan K Pati
- Theoretical Sciences Unit, School of Advanced Materials (SAMat), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Bangalore 560064, India
| | - Suman Kalyan Pal
- School of Physical Sciences, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India
- Advanced Materials Research Centre, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India
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2
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Zhou H, Zhang C, Gao A, Shi E, Guo Y. Patterned growth of two-dimensional atomic layer semiconductors. Chem Commun (Camb) 2024; 60:943-955. [PMID: 38168791 DOI: 10.1039/d3cc04866g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Transition metal dichalcogenides (TMDCs), which are representative of two-dimensional (2D) semiconductors, have attracted tremendous attention over the last two decades. TMDCs are regarded as potential candidates in modern nano- and optoelectronic applications due to their unique crystal structures and outstanding electronic and optoelectronic properties. For practical use, 2D semiconductors need to be fabricated with diverse morphologies for integration into electronic devices and to perform different functionalities. Controlled patterning synthesis with programmable geometries is therefore highly desired. We review state-of-the-art strategies for the patterned growth of atomic layer TMDCs and their heterostructures, including additive manufacturing and subtractive manufacturing for patterning single TMDC materials and the introduction of other low-dimensional nanomaterials as growth templates or hetero-atoms for element conversion in patterning TMDC heterostructures. The optoelectronic and electronic applications of the as-grown monolayer TMDC patterns are introduced. Future challenges and the prospects for the patterned growth of 2D semiconductors are discussed based on present achievements.
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Affiliation(s)
- Hao Zhou
- Key Laboratory of Polar Materials and Devices(MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
| | - Chiyu Zhang
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
| | - Anran Gao
- Key Laboratory of Polar Materials and Devices(MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.
| | - Enzheng Shi
- School of Engineering, Westlake University, Hangzhou, 310030, China.
| | - Yunfan Guo
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
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3
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Li G, Stefanczyk O, Jia F, Nagashima S, Kumar K, Imoto K, Tokoro H, Ohkoshi SI. Mechanical Exfoliation of Multilayer Pseudohalogen-Bridged Nanosheets. J Phys Chem Lett 2023; 14:10420-10426. [PMID: 37955968 DOI: 10.1021/acs.jpclett.3c02257] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2023]
Abstract
The development of nanolayered materials is one of the greatest challenges in nanoscience. Until now, pseudohalogen-bridged nanosheets using the mechanical exfoliation method have not been reported. A state-of-the-art material, {[FeII(3-acetylpyridine)2][HgII(μ-SCN)4]}n (1), has been developed to achieve the goal. The compound forms a two-dimensional (2D) coordination polymer with weak out-of-plane van der Waals interactions and has an intrinsic tendency to form shear planes perpendicular to the crystallographic c-direction. These structural features predispose 1 to mechanical exfoliation realized by employing the "Scotch-tape method". As a result, nanosheets were fabricated and characterized by digital optical microscopy, scanning electron microscopy, and atomic force microscopy. The nanosheets were found to have a minimum thickness of ∼15 nm and a lateral size of several micrometers. As the first example of thiocyanato-bridged coordination nanosheets, these materials extend the scope of 2D materials and potentially pave the way toward developing nanolayered materials.
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Affiliation(s)
- Guanping Li
- Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
| | - Olaf Stefanczyk
- Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
| | - Fangda Jia
- Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
| | - Shuntaro Nagashima
- Department of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan
| | - Kunal Kumar
- Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
| | - Kenta Imoto
- Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
| | - Hiroko Tokoro
- Department of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan
| | - Shin-Ichi Ohkoshi
- Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
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4
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Shrestha S, Li M, Park S, Tong X, DiMarzio D, Cotlet M. Room temperature valley polarization via spin selective charge transfer. Nat Commun 2023; 14:5234. [PMID: 37633986 PMCID: PMC10460417 DOI: 10.1038/s41467-023-40967-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Accepted: 08/17/2023] [Indexed: 08/28/2023] Open
Abstract
The two degenerate valleys in transition metal dichalcogenides can be used to store and process information for quantum information science and technology. A major challenge is maintaining valley polarization at room temperature where phonon-induced intervalley scattering is prominent. Here we demonstrate room temperature valley polarization in heterostructures of monolayer MoS2 and naphthylethylammine based one-dimensional chiral lead halide perovskite. By optically exciting the heterostructures with linearly polarized light close to resonance and measuring the helicity resolved photoluminescence, we obtain a degree of polarization of up to -7% and 8% in MoS2/right-handed (R-(+)-) and left-handed (S-(-)-) 1-(1-naphthyl)ethylammonium lead iodide perovskite, respectively. We attribute this to spin selective charge transfer from MoS2 to the chiral perovskites, where the perovskites act as a spin filter due to their chiral nature. Our study provides a simple, yet robust route to obtain room temperature valley polarization, paving the way for practical valleytronics devices.
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Affiliation(s)
- Shreetu Shrestha
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA.
| | - Mingxing Li
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Suji Park
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Xiao Tong
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Donald DiMarzio
- Northrop Grumman Corporation, One Space Park, Redondo Beach, CA, 90278, USA
| | - Mircea Cotlet
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA.
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5
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Li X, Nie W, Ma X. Intersubband Transitions in Lead Halide Perovskite-Based Quantum Wells for Mid-Infrared Detectors. J Phys Chem Lett 2023; 14:4766-4774. [PMID: 37184992 DOI: 10.1021/acs.jpclett.3c00565] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Due to their excellent optical and electrical properties as well as versatile growth and fabrication processes, lead halide perovskites have been widely considered as promising candidates for green energy and applications related to optoelectronics. Here, we investigate their potential applications at infrared wavelengths by modeling the intersubband transitions in perovskite-based quantum well systems. Both single-well and double-well structures are studied, and their energy levels as well as the corresponding wave functions and intersubband transition energies are calculated by solving the one-dimensional Schrödinger equations. Via adjustment of the quantum well and barrier thicknesses, the intersubband transition energies can be tuned to cover a broad infrared wavelength range. We also find that the lead halide perovskite-based quantum wells possess high absorption coefficients. The widely tunable transition energies and high absorption coefficients of the perovskite-based quantum well systems, combined with their unique material and electrical properties, may enable an alternative material system for infrared photodetector applications.
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Affiliation(s)
- Xinxin Li
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Consortium for Advanced Science and Engineering, The University of Chicago, Chicago, Illinois 60637, United States
| | - Wanyi Nie
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Xuedan Ma
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Consortium for Advanced Science and Engineering, The University of Chicago, Chicago, Illinois 60637, United States
- Center for Molecular Quantum Transduction, Northwestern University, Evanston, Illinois 60208, United States
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6
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Liu F, Zhou H, Gu Y, Dong Z, Yang Y, Wang Z, Zhang T, Wu W. Solution Processed Photodetectors with PVK-WS 2 Nanotube/Nanofullerene Organic-Inorganic Hybrid Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:43612-43620. [PMID: 36099066 DOI: 10.1021/acsami.2c10745] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Organic-inorganic hybrid photodetectors have attracted increased interest due to their exceptional properties, such as flexibility, transparency, and low cost for many promising applications. Low-dimensional tungsten disulfide (WS2) nanostructures have outstanding electrical and optical properties, making them ideal candidates for ultrasensitive photodetector devices. In this paper, photodetectors were fabricated with hybrid thin films containing two different WS2 nanomaterials, one-dimensional (1D) WS2 nanotubes (WS2-NTs) and a zero-dimensional (0D) WS2 nanofullerene (WS2-FLs) hybrid with poly(N-vinyl carbazole) (PVK). The electrical responses of the devices under visible-light illuminations were studied. The photodetector devices with 0D WS2-FLs/PVK hybrid thin films have relatively higher sensitivity and stable voltage responses to visible light. Besides, the hybrid film shows a strong surface-enhanced Raman effect (SERS). These materials and new strategies enable the creation of a new class of processed photodetectors for practical applications.
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Affiliation(s)
- Fenghua Liu
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
| | - Huanli Zhou
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, People's Republic of China
| | - Yunjiao Gu
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
| | - Zhenbiao Dong
- School of Mechanical Engineering, Shanghai Institute of Technology, Shanghai, 201418, People's Republic of China
| | - Yi Yang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, People's Republic of China
| | - Zan Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
| | - Tong Zhang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, People's Republic of China
| | - Weiping Wu
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
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7
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Kang T, Tang TW, Pan B, Liu H, Zhang K, Luo Z. Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics. ACS MATERIALS AU 2022; 2:665-685. [PMID: 36855548 PMCID: PMC9928416 DOI: 10.1021/acsmaterialsau.2c00029] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
In recent years, transition metal dichalcogenide (TMD)-based electronics have experienced a prosperous stage of development, and some considerable applications include field-effect transistors, photodetectors, and light-emitting diodes. Chemical vapor deposition (CVD), a typical bottom-up approach for preparing 2D materials, is widely used to synthesize large-area 2D TMD films and is a promising method for mass production to implement them for practical applications. In this review, we investigate recent progress in controlled CVD growth of 2D TMDs, aiming for controlled nucleation and orientation, using various CVD strategies such as choice of precursors or substrates, process optimization, and system engineering. We then survey different patterning methods, such as surface patterning, metal precursor patterning, and postgrowth sulfurization/selenization/tellurization, to mass produce heterostructures for device applications. With these strategies, various well-designed architectures, such as wafer-scale single crystals, vertical and lateral heterostructures, patterned structures, and arrays, are achieved. In addition, we further discuss various electronics made from CVD-grown TMDs to demonstrate the diverse application scenarios. Finally, perspectives regarding the current challenges of controlled CVD growth of 2D TMDs are also suggested.
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Affiliation(s)
- Ting Kang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Tsz Wing Tang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Baojun Pan
- Macao
Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology, Taipa, Macau 999078, P.R. China
| | - Hongwei Liu
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Kenan Zhang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Zhengtang Luo
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China,
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8
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2D Material and Perovskite Heterostructure for Optoelectronic Applications. NANOMATERIALS 2022; 12:nano12122100. [PMID: 35745439 PMCID: PMC9228184 DOI: 10.3390/nano12122100] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/02/2022] [Revised: 06/06/2022] [Accepted: 06/16/2022] [Indexed: 02/06/2023]
Abstract
Optoelectronic devices are key building blocks for sustainable energy, imaging applications, and optical communications in modern society. Two-dimensional materials and perovskites have been considered promising candidates in this research area due to their fascinating material properties. Despite the significant progress achieved in the past decades, challenges still remain to further improve the performance of devices based on 2D materials or perovskites and to solve stability issues for their reliability. Recently, a novel concept of 2D material/perovskite heterostructure has demonstrated remarkable achievements by taking advantage of both materials. The diverse fabrication techniques and large families of 2D materials and perovskites open up great opportunities for structure modification, interface engineering, and composition tuning in state-of-the-art optoelectronics. In this review, we present comprehensive information on the synthesis methods, material properties of 2D materials and perovskites, and the research progress of optoelectronic devices, particularly solar cells and photodetectors which are based on 2D materials, perovskites, and 2D material/perovskite heterostructures with future perspectives.
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9
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Ago H, Okada S, Miyata Y, Matsuda K, Koshino M, Ueno K, Nagashio K. Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2022; 23:275-299. [PMID: 35557511 PMCID: PMC9090349 DOI: 10.1080/14686996.2022.2062576] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2022] [Revised: 03/29/2022] [Accepted: 03/30/2022] [Indexed: 05/22/2023]
Abstract
The past decades of materials science discoveries are the basis of our present society - from the foundation of semiconductor devices to the recent development of internet of things (IoT) technologies. These materials science developments have depended mainly on control of rigid chemical bonds, such as covalent and ionic bonds, in organic molecules and polymers, inorganic crystals and thin films. The recent discovery of graphene and other two-dimensional (2D) materials offers a novel approach to synthesizing materials by controlling their weak out-of-plane van der Waals (vdW) interactions. Artificial stacks of different types of 2D materials are a novel concept in materials synthesis, with the stacks not limited by rigid chemical bonds nor by lattice constants. This offers plenty of opportunities to explore new physics, chemistry, and engineering. An often-overlooked characteristic of vdW stacks is the well-defined 2D nanospace between the layers, which provides unique physical phenomena and a rich field for synthesis of novel materials. Applying the science of intercalation compounds to 2D materials provides new insights and expectations about the use of the vdW nanospace. We call this nascent field of science '2.5 dimensional (2.5D) materials,' to acknowledge the important extra degree of freedom beyond 2D materials. 2.5D materials not only offer a new field of scientific research, but also contribute to the development of practical applications, and will lead to future social innovation. In this paper, we introduce the new scientific concept of this science of '2.5D materials' and review recent research developments based on this new scientific concept.
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Affiliation(s)
- Hiroki Ago
- Global Innovation Center, Kyushu University, Fukuoka, Japan
- CONTACT Hiroki Ago Global Innovation Center, Kyushu University, Fukuoka816-8580, Japan
| | - Susumu Okada
- Graduate School of Pure and Applied Sciences, University of Tsukuba, Ibaraki, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, Japan
| | | | | | - Kosei Ueno
- Department of Chemistry, Faculty of Science, Hokkaido University, Hokkaido, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, University of Tokyo, Tokyo, Japan
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10
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Wang Q, Wee ATS. Upconversion Photovoltaic Effect of WS 2/2D Perovskite Heterostructures by Two-Photon Absorption. ACS NANO 2021; 15:10437-10443. [PMID: 34009945 DOI: 10.1021/acsnano.1c02782] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Photovoltaic devices work by converting sunlight energy into electric energy. The efficiency of current photovoltaic devices, however, is significantly limited by the transmission loss of photons with energies below the bandgap of channel semiconductors, which can be circumvented by photon energy upconversion. Energy upconversion has been widely employed to improve the efficiency of traditional solar cells. However, the employment of energy upconversion in two-dimensional (2D) heterostructure photovoltaic devices has not been investigated yet. Here, we report the upconversion photovoltaic effect of WS2 monolayer/(C6H5C2H4NH3)2PbI4 (PEPI) 2D perovskite heterostructures by below-bandgap two-photon absorption via a virtual intermediate state. An open circuit voltage of 0.37 V and short circuit current of 7.4 pA are obtained with a photoresponsivity of 771 pA/W and current on/off ratio of 130:1. This work demonstrates that upconversion by two-photon absorption may potentially be a strategy for boosting the efficiency of 2D material-based photovoltaic devices by virtue of the absorption of photons below the bandgap energy of channel semiconductors.
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Affiliation(s)
- Qixing Wang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Block S14, 6 Science Drive 2, Singapore 117546, Singapore
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11
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Wang Q, Zhang Q, Luo X, Wang J, Zhu R, Liang Q, Zhang L, Yong JZ, Yu Wong CP, Eda G, Smet JH, Wee ATS. Optoelectronic Properties of a van der Waals WS 2 Monolayer/2D Perovskite Vertical Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2020; 12:45235-45242. [PMID: 32924427 DOI: 10.1021/acsami.0c14398] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) Ruddlesden-Popper perovskites have been demonstrated to possess great potential for optical and optoelectronic devices. Because they exhibit better ambient stability than three-dimensional (3D) perovskites, they have been considered as potential substitutes for 3D perovskites as light absorbing layers to improve the photoresponsivity of monolayer transition metal dichalcogenide (TMDC)-based photodetectors. Investigation of the optoelectronic properties of TMDC monolayer/2D perovskite vertical heterostructures is however at an early stage. Here, we address the photovoltaic effect and the photodetection performance in tungsten disulfide (WS2) monolayer/2D perovskite (C6H5C2H4NH3)2PbI4 (PEPI) vertical heterostructures. A vertical device geometry with separate graphene contacts to both heterointerface constituents acted as a photovoltaic device and self-driven photodetector. The photovoltaic device exhibited an open circuit voltage of -0.57 V and a short circuit current of 41.6 nA. A photoresponsivity of 0.13 mA/W at the WS2/PEPI heterointerface was achieved, which was signified by a factor of 5 compared to that from the individual WS2 region. The current on/off ratio of the self-driven photodetector was approximately 1500. The photoresponsivity and external quantum efficiency of the self-driven photodetector were estimated to be 24.2 μA/W and 5.7 × 10-5, respectively. This work corroborates that 2D perovskites are promising light absorbing layers in optoelectronic devices with a TMDC-based heterointerface.
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Affiliation(s)
- Qixing Wang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- Max Planck Institute for Solid State Research, Stuttgart D-70569, Germany (current position)
| | - Qi Zhang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Xin Luo
- State Key Laboratory of Optoelectronic Materials and Technologies, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, P.R. China
| | - Junyong Wang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Rui Zhu
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Qijie Liang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Lei Zhang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Justin Zhou Yong
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Calvin Pei Yu Wong
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Goki Eda
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Block S14, 6 Science Drive 2, Singapore 117546, Singapore
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Jurgen H Smet
- Max Planck Institute for Solid State Research, Stuttgart D-70569, Germany (current position)
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Block S14, 6 Science Drive 2, Singapore 117546, Singapore
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12
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Erkılıç U, Ji HG, Nishibori E, Ago H. One-step vapour phase growth of two-dimensional formamidinium-based perovskite and its hot carrier dynamics. Phys Chem Chem Phys 2020; 22:21512-21519. [PMID: 32955052 DOI: 10.1039/d0cp02652b] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Formamidinum lead iodide perovskite is one of the most promising materials for application in solar cells due to its narrow band gap and higher thermal stability. In this work, we demonstrate the facile synthesis of square-shaped formamidinium lead iodide single crystals on indium tin oxide (ITO) substrates using a one-step vapour phase deposition method. Formamidinium lead iodide-based two-dimensional layered perovskite crystals were successfully synthesized by controlling the deposition conditions. These crystals exhibited a blue-shifted photoluminescence (PL) compared to the conventional formaminium lead iodide perovskite crystals. Power law fittings of the excitation power dependent PL spectra revealed that Auger heating becomes dominant at high excitation densities. In addition, we observed an asymmetric broadening of the PL peak tail at the high energy side, indicating light emission from hot carriers even under steady-state illumination conditions. Phonon-bottleneck effect and Auger heating were considered as the main mechanisms for retardation of hot carrier cooling. Further analysis of the high energy tails using Maxwell-Boltzmann fitting revealed hot-carrier temperatures as high as 690 K. Our findings provide an important aspect of the synthetic approach of perovskites for their potential application in hot carrier solar cells.
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Affiliation(s)
- Ufuk Erkılıç
- Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan
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13
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Al Ghaithi AO, Aravindh SA, Hedhili MN, Ng TK, Ooi BS, Najar A. Optical Properties and First-Principles Study of CH 3NH 3PbBr 3 Perovskite Structures. ACS OMEGA 2020; 5:12313-12319. [PMID: 32548414 PMCID: PMC7271361 DOI: 10.1021/acsomega.0c01044] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/08/2020] [Accepted: 05/11/2020] [Indexed: 06/11/2023]
Abstract
Solution-processed organic-inorganic hybrid perovskites have attracted attention as light-harvesting materials for solar cells and photonic applications. The present study focuses on cubic single crystals and microstructures of CH3NH3PbBr3 perovskite fabricated by a one-step solution-based self-assembly method. It is seen that, in addition to the nucleation from the precursor solution, crystallization occurs when the solution is supersaturated, followed by the formation of a small nucleus of CH3NH3PbBr3 that self-assembles into bigger hollow cubes. A three-dimensional (3D) fluorescence microscopy investigation of hollow cubes confirmed the formation of hollow plates on the bottom; then, the growth starts from the perimeter and propagates to the center of the cube. Furthermore, the growth in the (001) direction follows a layer-by-layer growth model to form a complete cube, confirmed by scanning electronic microscopy (SEM) observations. Two-dimensional (2D)-3D fluorescence microscopy and photoluminescence (PL) measurements confirm a peak emission at 535 nm. To get more insights into the structural and optical properties, density functional theory (DFT) simulations were conducted. The electronic and optical properties calculated by DFT are in agreement with the obtained experimental values. The density-of-state (DOS) calculations revealed that the valence band maximum (VBM) consists of states contributed by Br and Pb, which agrees with the X-ray photoelectron spectroscopy valence band (XPS VB) measurements.
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Affiliation(s)
- Asma O. Al Ghaithi
- Department
of Physics, College of Science, United Arab
Emirates University, Al Ain 15551, UAE
| | - S. Assa Aravindh
- Nano
and Molecular Systems Research Unit, University
of Oulu, P.O. Box 8000, FI-90014 Oulu, Finland
| | - Mohamed N. Hedhili
- King
Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Tien Khee Ng
- King
Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Boon S. Ooi
- King
Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Adel Najar
- Department
of Physics, College of Science, United Arab
Emirates University, Al Ain 15551, UAE
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