Tailoring Nanoporous Structures in Bi2Te3 Thin Films for Improved Thermoelectric Performance

Principles and Methods for Improving the Thermoelectric Performance of SiC: A Potential High-Temperature Thermoelectric Material

Thermoelectric materials that can convert thermal energy to electrical energy are stable and long-lasting and do not emit greenhouse gases; these properties render them useful in novel power generation devices that can conserve and utilize lost heat. SiC exhibits good mechanical properties, excellent corrosion resistance, high-temperature stability, non-toxicity, and environmental friendliness. It can withstand elevated temperatures and thermal shock and is well suited for thermoelectric conversions in high-temperature and harsh environments, such as supersonic vehicles and rockets. This paper reviews the potential of SiC as a high-temperature thermoelectric and third-generation wide-bandgap semiconductor material. Recent research on SiC thermoelectric materials is reviewed, and the principles and methods for optimizing the thermoelectric properties of SiC are discussed. Thus, this paper may contribute to increasing the application potential of SiC for thermoelectric energy conversion at high temperatures.

Into the Void: Single Nanopore in Colloidally Synthesized Bi2Te3 Nanoplates with Ultralow Lattice Thermal Conductivity

Bi2Te3 is a well-known thermoelectric material that was first investigated in the 1960s, optimized over decades, and is now one of the highest performing room-temperature thermoelectric materials to-date. Herein, we report on the colloidal synthesis, growth mechanism, and thermoelectric properties of Bi2Te3 nanoplates with a single nanopore in the center. Analysis of the reaction products during the colloidal synthesis reveals that the reaction progresses via a two-step nucleation and epitaxial growth: first of elemental Te nanorods and then the binary Bi2Te3 nanoplate growth. The rates of epitaxial growth can be controlled during the reaction, thus allowing the formation of a single nanopore in the center of the Bi2Te3 nanoplates. The size of the nanopore can be controlled by changing the pH of the reaction solution, where larger pores with diameter of ∼50 nm are formed at higher pH and smaller pores with diameter of ∼16 nm are formed at lower pH. We propose that the formation of the single nanopore is mediated by the Kirkendall effect and thus the reaction conditions allow for the selective control over pore size. Nanoplates have well-defined hexagonal facets as seen in the scanning and transmission electron microscopy images. The single nanopores have a thin amorphous layer at the edge, revealed by transmission electron microscopy. Thermoelectric properties of the pristine and single-nanopore Bi2Te3 nanoplates were measured in the parallel and perpendicular directions. These properties reveal strong anisotropy with a significant reduction to thermal conductivity and increased electrical resistivity in the perpendicular direction due to the higher number of nanoplate and nanopore interfaces. Furthermore, Bi2Te3 nanoplates with a single nanopore exhibit ultralow lattice thermal conductivity values, reaching ∼0.21 Wm-1K-1 in the perpendicular direction. The lattice thermal conductivity was found to be systematically lowered with pore size, allowing for the realization of a thermoelectric figure of merit, zT of 0.75 at 425 K for the largest pore size.

Thermoelectric Performance of Tetrahedrite (Cu12Sb4S13) Thin Films: The Influence of the Substrate and Interlayer

In the present work, tetrahedrite Cu12Sb4S13 thin films were deposited on various substrates via aerosol-assisted chemical vapor deposition (AACVD) using diethyldithiocarbamate complexes as precursors. A buffer layer of Sb2O3 with a small lattice mismatch to Cu12Sb4S13 was applied to one of the glass substrates to improve the quality of the deposited thin film. The buffer layer increased the coverage of the Cu12Sb4S13 thin film, resulting in improved electrical transport properties. The growth of the Cu12Sb4S13 thin films on the other substrates, including ITO-coated glass, a SiO2-coated Si wafer, and mica, was also investigated. Compared to the films grown on the other substrates, the Cu12Sb4S13 thin film deposited on the SiO2-coated Si wafer showed a dense and compact microstructure and a larger grain size (qualities that are beneficial for carrier transport), yielding a champion power factor (PF) of ∼362 μW cm-1 K-2 at 625 K. The choice of substrate strongly influenced the composition, microstructure, and electrical transport properties of the deposited Cu12Sb4S13 thin film. At 460 K, the highest zT value that was obtained for the thin films was ∼0.18. This is comparable to values reported for Cu-Sb-S bulk materials at the same temperature. Cu12Sb4S13 thin films deposited using AACVD are promising for thermoelectric applications. To the best of our knowledge, the first full thermoelectric characterization of the Cu12Sb4S13 thin film is performed in this work.

High-Performance Thermoelectric Flexible Ag2Se-Based Films with Wave-Shaped Buckling via a Thermal Diffusion Method

Herein, an n-type Ag2Se thermoelectric flexible thin film has been fabricated on a polyimide (PI) substrate via a novel thermal diffusion method, and the thermoelectric performance is well-optimized by adjusting the pressure and temperature of thermal diffusion. All of the Ag2Se films are beneficial to grow (013) preferred orientations, which is conducive to performing a high Seebeck coefficient. By increasing the thermal diffusion temperature, the electrical conductivity can be rationally regulated while maintaining the independence of the Seebeck coefficient, which is mainly attributed to the increased electric mobility. As a result, the fabricated Ag2Se thin film achieves a high power factor of 18.25 μW cm-1 K-2 at room temperature and a maximum value of 21.7 μW cm-1 K-2 at 393 K. Additionally, the thermal diffusion method has resulted in a wave-shaped buckling, which is further verified as a promising structure to realize a larger temperature difference by the simulation results of finite element analysis (FEA). Additionally, this unique surface morphology of the Ag2Se thin film also exhibits outstanding mechanical properties, for which the elasticity modulus is only 0.42 GPa. Finally, a flexible round-shaped module assembled with Sb2Te3 has demonstrated an output power of 166 nW at a temperature difference of 50 K. This work not only introduces a new method of preparing Ag2Se thin films but also offers a convincing strategy of optimizing the microstructure to enhance low-grade heat utilization efficiency.

Large-area 2D bismuth antimonide with enhanced thermoelectric properties via multiscale electron-phonon decoupling

It is a challenge to obtain high thermoelectric efficiency owing to the conflicting parameters of the materials that are required. In this work, the composition-adjustable 2D bismuth antimonide (Bi_100-xSb_x) is synthesized using an e-beam evaporation system with homemade targets. Engineering multiscale defects is done to optimize the thermoelectric performance in the compound. Sb alloying introduces atomic defects, lattice distortion and increased grain boundary. They drastically decrease the thermal conductivity, with an ultralow value of ∼0.23 W m^-1 K^-1 obtained for the composition with x = 18. It is noticed that the atomic and nanoscale defects do not deteriorate the electrical conductivity (10⁵ S m^-1), and the value is even comparable to the bulk counterpart over a wide composition range (0 ≤ x ≤ 35). Annealing induces pore structure with microscale defects, which increase the Seebeck coefficient by 84% due to the energy barrier. The resultant ZT of 0.13 is enhanced by 420% in the annealed Bi₈₂Sb₁₈ when compared with the as-grown Bi. This work demonstrates a cost-effective and controllable way to decouple electrons and phonons in the thermoelectric field.

Nanostructured Thermoelectric Films Synthesised by Spark Ablation and Their Oxidation Behaviour

Reducing the thermal conductivity of thermoelectric materials has been a field of intense research to improve the efficiency of thermoelectric devices. One approach is to create a nanostructured thermoelectric material that has a low thermal conductivity due to its high number of grain boundaries or voids, which scatter phonons. Here, we present a new method based on spark ablation nanoparticle generation to create nanostructured thermoelectric materials, demonstrated using Bi₂Te₃. The lowest achieved thermal conductivity was <0.1 W m-1 K-1 at room temperature with a mean nanoparticle size of 8±2 nm and a porosity of 44%. This is comparable to the best published nanostructured Bi₂Te₃ films. Oxidation is also shown to be a major issue for nanoporous materials such as the one here, illustrating the importance of immediate, air-tight packaging of such materials after synthesis and deposition.

Selective Dissolution-Derived Nanoporous Design of Impurity-Free Bi2 Te3 Alloys with High Thermoelectric Performance

Thermoelectric technology, which has been receiving attention as a sustainable energy source, has limited applications because of its relatively low conversion efficiency. To broaden their application scope, thermoelectric materials require a high dimensionless figure of merit (ZT). Porous structuring of a thermoelectric material is a promising approach to enhance ZT by reducing its thermal conductivity. However, nanopores do not form in thermoelectric materials in a straightforward manner; impurities are also likely to be present in thermoelectric materials. Here, a simple but effective way to synthesize impurity-free nanoporous Bi_0.4 Sb_1.6 Te₃ via the use of nanoporous raw powder, which is scalably formed by the selective dissolution of KCl after collision between Bi_0.4 Sb_1.6 Te₃ and KCl powders, is proposed. This approach creates abundant nanopores, which effectively scatter phonons, thereby reducing the lattice thermal conductivity by 33% from 0.55 to 0.37 W m^-1 K^-1 . Benefitting from the optimized porous structure, porous Bi_0.4 Sb_1.6 Te₃ achieves a high ZT of 1.41 in the temperature range of 333-373 K, and an excellent average ZT of 1.34 over a wide temperature range of 298-473 K. This study provides a facile and scalable method for developing high thermoelectric performance Bi₂ Te₃ -based alloys that can be further applied to other thermoelectric materials.

Porous charged polymer nanosheets formed via microplastic removal from frozen ice for virus filtration and detection

We developed a method for producing porous charged polymer nanosheets using frozen ice containing microplastics. Upon assessing SARS-CoV-2 filtration using nanosheets with 100 nm-sized pores, a high rejection rate of 96% was achieved. The charged surfaces of nanosheets further enabled the electrophoretic capture of the virus using a portable battery with additional real-time sensing capability.

Novel Thermal Diffusion Temperature Engineering Leading to High Thermoelectric Performance in Bi2 Te3 -Based Flexible Thin-Films

Flexible Bi₂ Te₃ -based thermoelectric devices can function as power generators for powering wearable electronics or chip-sensors for internet-of-things. However, the unsatisfied performance of n-type Bi₂ Te₃ flexible thin films significantly limits their wide application. In this study, a novel thermal diffusion method is employed to fabricate n-type Te-embedded Bi₂ Te₃ flexible thin films on flexible polyimide substrates, where Te embeddings can be achieved by tuning the thermal diffusion temperature and correspondingly result in an energy filtering effect at the Bi₂ Te₃ /Te interfaces. The energy filtering effect can lead to a high Seebeck coefficient ≈160 µV K^-1 as well as high carrier mobility of ≈200 cm² V^-1 s^-1 at room-temperature. Consequently, an ultrahigh room-temperature power factor of 14.65 µW cm^-1 K^-2 can be observed in the Te-embedded Bi₂ Te₃ flexible thin films prepared at the diffusion temperature of 623 K. A thermoelectric sensor is also assembled through integrating the n-type Bi₂ Te₃ flexible thin films with p-type Sb₂ Te₃ counterparts, which can fast reflect finger-touch status and demonstrate the applicability of as-prepared Te-embedded Bi₂ Te₃ flexible thin films. This study indicates that the thermal diffusion method is an effective way to fabricate high-performance and applicable flexible Te-embedded Bi₂ Te₃ -based thin films.

Seebeck-driven transverse thermoelectric generation

When a temperature gradient is applied to a closed circuit comprising two different conductors, a charge current is generated via the Seebeck effect¹. Here, we utilize the Seebeck-effect-induced charge current to drive 'transverse' thermoelectric generation, which has great potential for energy harvesting and heat sensing applications owing to the orthogonal geometry of the heat-to-charge-current conversion^2-9. We found that, in a closed circuit comprising thermoelectric and magnetic materials, artificial hybridization of the Seebeck effect into the anomalous Hall effect¹⁰ enables transverse thermoelectric generation with a similar symmetry to the anomalous Nernst effect^11-27. Surprisingly, the Seebeck-effect-driven transverse thermopower can be several orders of magnitude larger than the anomalous-Nernst-effect-driven thermopower, which is clearly demonstrated by our experiments using Co₂MnGa/Si hybrid materials. The unconventional approach could be a breakthrough in developing applications of transverse thermoelectric generation.

Modifying the Thermoelectric Transport of Sb2Te3 Thin Films via the Carrier Filtering Effect by Incorporating Size-Selected Gold Nanoparticles

Hot energy carrier filtering as a means to improve the thermoelectric (TE) property in Sb₂Te₃ thin film samples having size-selected Au nanoparticles (NPs) is investigated in the present study. Nonagglomerated Au NPs with a very narrow size distribution grown by an integrated gas-phase synthesis setup are incorporated into the Sb₂Te₃ thin film synthesized by RF magnetron sputtering. TE properties have been investigated as a function of size-selected Au NP concentrations and compared with that of a nanocomposite sample having non-size-selected Au NPs. An increase in the Seebeck coefficient and power factor, along with a slight decrease in electrical conductivity, is observed for samples with a NP size of minimum variance. Further, the Kelvin probe force microscopy and conducting atomic force microscopy techniques were employed to understand the nature of the interface and charge transport across the Sb₂Te₃ matrix and Au NPs. The study provides an opportunity to modulate the TE properties in Sb₂Te₃ thin films by constructing a metal-semiconductor heterostructure through controlling the concentration and randomness to achieve a high TE performance.

Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

N-type bismuth telluride (Bi₂Te₃) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K² for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

Evaluation of Thermoelectric Performance of Bi2Te3 Films as a Function of Temperature Increase Rate during Heat Treatment

Thin film thermoelectric generators are expected to be applied as power supplies for various Internet of Thing devices owing to their small size and flexible structure. However, the primary challenges of thin film thermoelectric generators are to improve their thermoelectric performance and reduce their manufacturing cost. Hence, Bi2Te3 thin films were deposited using direct current magnetron sputtering, followed by heat treatment at 573 K with different temperature increase rates ranging from 4 to 16 K/min. The in-plane Seebeck coefficient and electrical conductivity were measured at approximately 293 K. The in-plane thermal conductivity was calculated using the models to determine the power factor (PF) and dimensionless figure of merit (ZT). The temperature increase rate clearly affected the atomic composition, crystal orientation, and lattice strains, but not the crystallite size. The PF and dimensionless ZT increased as the temperature increase rate increased. The highest PF of 17.5 µW/(cm·K2) and ZT of 0.48 were achieved at a temperature increase rate of 16 K/min, while the unannealed thin film exhibited the lowest PF of 0.7 µW/(cm·K2) and ZT of 0.05. Therefore, this study demonstrated a method to enhance the thermoelectric performance of Bi2Te3 thin films by heat treatment at the appropriate temperature increase rate.

Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

When there is a choice of materials for an application, particular emphasis should be given to the development of those that are low-cost, nontoxic, and Earth-abundant. Chalcostibite CuSbSe2 has gained attention as a potential absorber material for thin-film solar cells, since it exhibits a high absorption coefficient. In this study, CuSbSe2 thin films were deposited by radio frequency magnetron cosputtering with CuSe2 and Sb targets. A series of CuSbxSe2 thin films were prepared with different Sb contents adjusted by sputtering power, followed by rapid thermal annealing. Impurity phases and surface morphology of Cu–Sb–Se systems were directly affected by the Sb sputtering power, with the formation of volatile components. The crystallinity of the CuSbSe2 thin films was also enhanced in the near-stoichiometric system at an Sb sputtering power of 15 W, and considerable degradation in crystallinity occurred with a slight increase over 19 W. Resistivity, carrier mobility, and carrier concentration of the near-stoichiometric thin film were 14.4 Ω-cm, 3.27 cm2/V∙s, and 1.33 × 1017 cm−3, respectively. The optical band gap and absorption coefficient under the same conditions were 1.7 eV and 1.75 × 105 cm−1, which are acceptable for highly efficient thin-film solar cells.