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Xu X, Wang Y, Ji Y, Chen Z, Lu C, Xu X, Hua D. High-Performance Flexible Broadband Photoelectrochemical Photodetector Based on Molybdenum Telluride. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308590. [PMID: 38295096 DOI: 10.1002/smll.202308590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Revised: 12/28/2023] [Indexed: 02/02/2024]
Abstract
Flexible broadband photodetectors are desired but challenging to be fabricated for next-generation wearable intelligent optoelectronic devices. Considering the narrow bandgap and strong light absorption, molybdenum telluride (MoTe2) based photoelectrochemical photodetectors are successfully assembled by liquid phase exfoliation accompanied with the electrophoretic deposited method. This MoTe2-based photodetector shows a broadband detection in ultraviolet-near-infrared band, long-term stability within 18000 s, and fast response in millisecond-level (response time≈19 ms, recovery time≈26 ms). More importantly, even though the MoTe2 photodetector is bent and twisted at a high degree for several hundred times, it still shows excellent flexibility with stable on-off switching characteristics. Additionally, this photodetector displays a good response for rotation angles in the range from 0° to 360°, and the extracted Iph maintain almost the same value approximately 0.97 µA cm-2, suggesting an omnidirectional detection capability. This work demonstrates the proposed flexible photoanode shows a great potential in future broadband omnidirectional detection systems.
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Affiliation(s)
- Xiang Xu
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an, 710048, China
| | - Ying Wang
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an, 710048, China
| | - Yeqin Ji
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an, 710048, China
| | - Zhijian Chen
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an, 710048, China
| | - Chunhui Lu
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics and Photon Technology, Northwest University, Xi'an, 710069, China
| | - Xinlong Xu
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics and Photon Technology, Northwest University, Xi'an, 710069, China
| | - Dengxin Hua
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an, 710048, China
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2
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Ribeiro TC, Fonseca DHS, Barreto RR, Pereira-Andrade E, Miquita DR, Malachias A, Magalhaes-Paniago R. Scanning Tunneling Spectroscopy Method for the Prediction of Semiconductor Heterojunction Performance as a Prequel for Device Development. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1650-1658. [PMID: 38117664 DOI: 10.1021/acsami.3c11876] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/22/2023]
Abstract
The prediction of semiconductor device performance is a persistent challenge in materials science, and the ability to anticipate useful specifications prior to construction is crucial for enhancing the overall efficiency. In this study, we investigate the constituents of a solar cell by employing scanning tunneling microscopy (STM) and spectroscopy (STS). Through our observations, we identify a spatial distribution of the dopant type in thin films of materials that were designed to present major p-doping for germanium sulfide (GeS) and dominant n-doping for tin disulfide (SnS2). By generating separate STS maps for each semiconductor film and conducting a statistical analysis of the gap and doping distribution, we determine intrinsic limitations for the solar cell efficiency that must be understood prior to processing. Subsequently, we fabricate a solar cell utilizing these materials (GeS and SnS2) via vapor phase deposition and carry out a characterization using standard J-V curves under both dark/illuminated irradiance conditions. Our devices corroborate the expected reduced efficiency due to doping fluctuation but exhibit stable photocurrent responses. As originally planned, quantum efficiency measurements reveal that the peak efficiency of our solar cell coincides with the range where the standard silicon solar cells sharply decline. Our STS method is suggested as a prequel to device development in novel material junctions or deposition processes where fluctuations of doping levels are retrieved due to intrinsic material characteristics such as the occurrence of defects, roughness, local chemical segregation, and faceting or step bunching.
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Affiliation(s)
- Thiago C Ribeiro
- Departament of Physics, Federal University of Minas Gerais, Belo Horizonte, MG 30123-970, Brazil
| | - Daniel H S Fonseca
- Departament of Physics, Federal University of Minas Gerais, Belo Horizonte, MG 30123-970, Brazil
| | - Rafael Reis Barreto
- Departament of Physics, Federal University of Minas Gerais, Belo Horizonte, MG 30123-970, Brazil
| | - Everton Pereira-Andrade
- Departament of Physics, Federal University of Minas Gerais, Belo Horizonte, MG 30123-970, Brazil
| | - Douglas R Miquita
- Microscopy Center, Federal University of Minas Gerais, Belo Horizonte, MG 30123-970, Brazil
| | - Angelo Malachias
- Departament of Physics, Federal University of Minas Gerais, Belo Horizonte, MG 30123-970, Brazil
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3
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Yu S, Wang P, Ye H, Tang H, Wang S, Wu Z, Pei C, Lu J, Li H. Transition Metal Dichalcogenides Nanoscrolls: Preparation and Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2433. [PMID: 37686941 PMCID: PMC10490124 DOI: 10.3390/nano13172433] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 08/21/2023] [Accepted: 08/25/2023] [Indexed: 09/10/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) nanosheets have shown extensive applications due to their excellent physical and chemical properties. However, the low light absorption efficiency limits their application in optoelectronics. By rolling up 2D TMDCs nanosheets, the one-dimensional (1D) TMDCs nanoscrolls are formed with spiral tubular structure, tunable interlayer spacing, and opening ends. Due to the increased thickness of the scroll structure, the light absorption is enhanced. Meanwhile, the rapid electron transportation is confined along the 1D structure. Therefore, the TMDCs nanoscrolls show improved optoelectronic performance compared to 2D nanosheets. In addition, the high specific surface area and active edge site from the bending strain of the basal plane make them promising materials for catalytic reaction. Thus, the TMDCs nanoscrolls have attracted intensive attention in recent years. In this review, the structure of TMDCs nanoscrolls is first demonstrated and followed by various preparation methods of the TMDCs nanoscrolls. Afterwards, the applications of TMDCs nanoscrolls in the fields of photodetection, hydrogen evolution reaction, and gas sensing are discussed.
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Affiliation(s)
| | | | | | | | | | | | | | | | - Hai Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, China
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4
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Xing C, Li Z, Bang J, Wei S, Peng Z. One-dimensional TeSe nano-heterojunction: formation, calculations, carrier dynamics, and application in broad-spectrum photodetectors. NANOSCALE 2023; 15:8800-8813. [PMID: 37102599 DOI: 10.1039/d3nr00593c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
Seawater contains many electrolytes, is abundant in nature, environmentally friendly, and chemically stable, and exhibits substantial potential for replacement of traditional inorganic electrolytes in photoelectrochemical-type photodetectors (PDs). Herein, one-dimensional semiconductor TeSe nanorods (NRs) with core-shell nanostructures were reported, and their morphology, optical behavior, electronic structure, and photoinduced carrier dynamics were systematically investigated. As photosensitizers, the as-resultant TeSe NRs were assembled into PDs, and the influence of the bias potential, light wavelength and intensity, and the concentration of seawater on the photo-response of TeSe NR-based PDs was evaluated. These PDs exhibited favorable photo-response performance upon illumination with light in the ultraviolet-visible-near-infrared (UV-Vis-NIR) range and even simulated sunlight. Moreover, the TeSe NR-based PDs also exhibited a long duration and cycling stability of its on-off switching and might be useful in marine monitoring.
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Affiliation(s)
- Chenyang Xing
- Center for Stretchable Electronics and NanoSensors, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Zihao Li
- Center for Stretchable Electronics and NanoSensors, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Jian Bang
- Center for Stretchable Electronics and NanoSensors, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Songrui Wei
- Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Zhengchun Peng
- Center for Stretchable Electronics and NanoSensors, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
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5
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Mohammadzadeh MR, Hasani A, Jaferzadeh K, Fawzy M, De Silva T, Abnavi A, Ahmadi R, Ghanbari H, Askar A, Kabir F, Rajapakse R, Adachi MM. Unique Photoactivated Time-Resolved Response in 2D GeS for Selective Detection of Volatile Organic Compounds. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205458. [PMID: 36658730 PMCID: PMC10074048 DOI: 10.1002/advs.202205458] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Revised: 12/19/2022] [Indexed: 06/17/2023]
Abstract
Volatile organic compounds (VOCs) sensors have a broad range of applications including healthcare, process control, and air quality analysis. There are a variety of techniques for detecting VOCs such as optical, acoustic, electrochemical, and chemiresistive sensors. However, existing commercial VOC detectors have drawbacks such as high cost, large size, or lack of selectivity. Herein, a new sensing mechanism is demonstrated based on surface interactions between VOC and UV-excited 2D germanium sulfide (GeS), which provides an effective solution to distinguish VOCs. The GeS sensor shows a unique time-resolved electrical response to different VOC species, facilitating identification and qualitative measurement of VOCs. Moreover, machine learning is utilized to distinguish VOC species from their dynamic response via visualization with high accuracy. The proposed approach demonstrates the potential of 2D GeS as a promising candidate for selective miniature VOCs sensors in critical applications such as non-invasive diagnosis of diseases and health monitoring.
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Affiliation(s)
| | - Amirhossein Hasani
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Keyvan Jaferzadeh
- Department of Computer Science and Software EngineeringConcordia UniversityMontrealQuebecH3G 1M8Canada
| | - Mirette Fawzy
- Department of PhysicsSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Thushani De Silva
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Amin Abnavi
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Ribwar Ahmadi
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Hamidreza Ghanbari
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Abdelrahman Askar
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Fahmid Kabir
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - R.K.N.D. Rajapakse
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Michael M. Adachi
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
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6
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Tuan VV, Lavrentyev AA, Khyzhun OY, Binh NTT, Hieu NV, Kartamyshev AI, Hieu NN. Mexican-hat dispersions and high carrier mobility of γ-SnX (X = O, S, Se, Te) single-layers: a first-principles investigation. Phys Chem Chem Phys 2022; 24:29064-29073. [PMID: 36437803 DOI: 10.1039/d2cp04265g] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Abstract
The shape of energy dispersions near the band-edges plays a decisive role in the transport properties, especially the carrier mobility, of semiconductors. In this work, we design and investigate the γ phase of tin monoxide and monochalcogenides γ-SnX (X = O, S, Se, and Te) through first-principles simulations. γ-SnX is found to be dynamically stable with phonon dispersions containing only positive phonon frequencies. Due to the hexagonal atomic lattice, the mechanical properties of γ-SnX single-layers are directionally isotropic and their elastic constants meet Born's criterion for mechanical stability. Our calculation results indicate that all four single-layers of γ-SnX are semiconductors with the Mexican-hat dispersions. The biaxial strain not only greatly changes the electronic structures of the γ-SnX single-layers, but also can cause a phase transition from semiconductor to metal. Meanwhile, the effects of an electric field on the electron states of γ-SnX single-layers are insignificant. γ-SnX structures have high electron mobility and their electron mobility is highly directional isotropic along the two transport directions x and y. The findings not only initially introduce the γ phase of group IV-VI compounds, but also serve as a premise for further studies on this material family with potential applications in the future, both theoretically and experimentally.
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Affiliation(s)
- Vu V Tuan
- Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City, Vietnam.
- Faculty of Mechanical - Electrical and Computer Engineering, Van Lang University, Ho Chi Minh City, Vietnam
| | - A A Lavrentyev
- Department of Electrical Engineering and Electronics, Don State Technical University, 1 Gagarin Square, 344010 Rostov-on-Don, Russian Federation
| | - O Y Khyzhun
- Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanovsky Street, UA-03142 Kyiv, Ukraine
| | - Nguyen T T Binh
- Faculty of Basic Sciences, Quang Binh University, Quang Binh 510000, Vietnam
| | - Nguyen V Hieu
- Department of Physics, The University of Da Nang, University of Science and Education, Da Nang 550000, Vietnam
| | - A I Kartamyshev
- Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City, Vietnam.
- Faculty of Mechanical - Electrical and Computer Engineering, Van Lang University, Ho Chi Minh City, Vietnam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam.
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
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7
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Sensitivity Improvement of Surface Plasmon Resonance Biosensors with GeS-Metal Layers. ELECTRONICS 2022. [DOI: 10.3390/electronics11030332] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
Surface plasmon resonance (SPR) biosensors, with germanium sulfide (GeS) as a sensitive medium and Al/Ag/Au as the metal layers, are reported as we aim to improve the sensitivities of the biosensors. The sensitivities in conventional SPR biosensors, consisting of only metal Al, Ag, and Au layers, are 111°/RIU, 117°/RIU, 139°/RIU, respectively. Additionally, these sensitivities of the SPR biosensors based on the GeS-Al, GeS-Ag, and GeS-Au layers have an obvious improvement, resultant of 320°/RIU, 295°/RIU, and 260°/RIU, respectively. We also discuss the changing sensing medium GeS thickness using layer number to describe the scenario which brought about the diversification on the figure of merit (FOM) and optical absorption (OA) performance of the biosensors. These biosensors show obvious improvement of sensitivity and have strong SPR excitation to analytes; we believe that these kind biosensors could find potential applications in biological detection, chemical examination, and medical diagnosis.
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8
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Yu Q, Guo K, Dai Y, Deng H, Wang T, Wu H, Xu Y, Shi X, Wu J, Zhang K, Zhou P. Black phosphorus for near-infrared ultrafast lasers in the spatial/temporal domain. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:503001. [PMID: 34544055 DOI: 10.1088/1361-648x/ac2862] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2021] [Accepted: 09/20/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted extensive interests due to their wide range of electronic and optical properties. After continuous and extensive research, black phosphorus (BP), a novel member of 2D layered semiconductor material, benefit for the unique in-plane anisotropic structure, controllable direct bandgap characteristic, and high charge carrier mobility, has attracted tremendous attention and successfully applied in ultrafast pulse generation. This article, which focuses on near-infrared ultrafast laser demonstration of BP, present discussion of preparation methods for high quality BP nanosheet, various BP based ultrafast lasers in the spatial/temporal domain, and the future research needs.
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Affiliation(s)
- Qiang Yu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Kun Guo
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Yongping Dai
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China
| | - Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Tao Wang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Hanshuo Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Yijun Xu
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Xinyao Shi
- Institute of Quantum Sensing of Wuxi, Wuxi, People's Republic of China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Kai Zhang
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Pu Zhou
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
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9
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Feng M, Liu SC, Hu L, Wu J, Liu X, Xue DJ, Hu JS, Wan LJ. Interfacial Strain Engineering in Wide-Bandgap GeS Thin Films for Photovoltaics. J Am Chem Soc 2021; 143:9664-9671. [PMID: 34133156 DOI: 10.1021/jacs.1c04734] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
Abstract
Wide-bandgap semiconductors exhibiting a bandgap of ∼1.7-1.9 eV have generated great interest recently due to their important applications in tandem solar cells as top cells and emerging indoor photovoltaics. However, concerns about the stability and toxicity especially in indoor application limit the choice of these materials. Here we report a new member of this family, germanium monosulfide (GeS); this material displays a wide bandgap of 1.7 eV, nontoxic and earth-abundant constituents, and high stability. We find that the little success of GeS solar cells to date is primarily attributed to the challenge in fabricating high-quality polycrystalline GeS films, wherein the high thermal expansion coefficient (α = 3.1 × 10-5 K-1) combined with high crystallization temperature (375 °C) of GeS induces large tensile strain in the GeS film that peels off GeS from the substrate. By introducing a high-α buffer layer between GeS and substrate, we achieve a high-quality polycrystalline GeS thin film that compactly adheres to substrate with no voids. Solar cells fabricated by these GeS films show a power conversion efficiency of 1.36% under AM 1.5G illumination (100 mW cm-2). The unencapsulated devices are stable when stored in ambient atmosphere for 1500 h. Their efficiencies further increase to 3.6% under indoor illumination of 1000 lux.
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Affiliation(s)
- Mingjie Feng
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou 450002, China
| | - Shun-Chang Liu
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liyan Hu
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Jinpeng Wu
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xianhu Liu
- National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou 450002, China
| | - Ding-Jiang Xue
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jin-Song Hu
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Li-Jun Wan
- Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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10
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Sarkar AS, Stratakis E. Dispersion behaviour of two dimensional monochalcogenides. J Colloid Interface Sci 2021; 594:334-341. [PMID: 33773385 DOI: 10.1016/j.jcis.2021.02.081] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2020] [Revised: 02/03/2021] [Accepted: 02/18/2021] [Indexed: 11/15/2022]
Abstract
Solution processable two-dimensional (2D) materials have provided an ideal platform for both fundamental studies and wearable electronic applications. Apart from graphene and 2D dichalcogenides, IVA-VI metal monochalcogenides (MMCs) has emerged recently as a promising candidate for next generation electronic applications. However, the dispersion behavior, which is crucial for the quality, solubility and stability of MMCs, has been quite unexplored. Here, the exfoliation and the dispersion behavior of Germanium (II) monosulfide (GeS) and Tin (II) monosulfide (SnS) nanosheets has been investigated in a wide range of organic solvents. Nine different organic solvents were examined and analyzed, considering the solvent polarity, surface tension, and Hansen solubility parameters. A significant yield of isolated GeS and SnS flakes, namely ~16.4 and ~23.08 μg/ml in 2-propanol and N-Methyl-2-pyrrolidone respectively were attained. The isolated flakes are few-layers nanosheets with lateral sizes over a few hundreds of nanometers. The MMC colloids exhibit long-term stability, suggesting the MMCs applicability for scalable solution processable printed electronic device applications.
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Affiliation(s)
- Abdus Salam Sarkar
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, Heraklion, 700 13 Crete, Greece.
| | - Emmanuel Stratakis
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, Heraklion, 700 13 Crete, Greece; Physics Department, University of Crete, Heraklion, 710 03 Crete, Greece.
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11
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Zhou S, Chen K, Xu L, Yu B, Jiang T, Li J. Ultrathin two-dimensional Fe-doped cobaltous oxide as a piezoelectric enhancement mechanism in quartz crystal tuning fork (QCTF) photodetectors. OPTICS LETTERS 2021; 46:496-499. [PMID: 33528393 DOI: 10.1364/ol.406103] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2020] [Accepted: 12/15/2020] [Indexed: 06/12/2023]
Abstract
An innovative ultrathin two-dimensional (2D) Fe-doped cobaltous oxide (Fe-CoO) coated quartz crystal tuning fork (QCTF) was introduced for the purpose of developing a low-cost photoelectric detector with a simple configuration. The enhancement mechanism of the piezoelectric signal in the ultrathin 2D Fe-CoO-coated QCTF detector is assumed to be the synergetic photocarrier transfer and photothermal effect of ultrathin 2D Fe-CoO. The ultrathin 2D nanosheet structure of Fe-CoO with a large specific surface area can efficiently absorb and convert light into heat in the QCTF, and the photocarrier transfer from the Fe-CoO nanosheet to the electrode of the QCTF contributes to the enhancement in electricity given the shortened diffusion distance of carriers to the surfaces of the 2D nanosheet. Finite element modeling was adopted to simulate the thermoelastic expansion and mechanical resonance of the QCTF with 2D Fe-CoO coating to support experimental results and analyses. Moreover, the effects of 2D Fe-CoO on the performance of QCTF-based photoelectric detectors were investigated. This Letter demonstrates that ultrathin 2D materials have great potential in applications such as costly and tiny QCTF detectors, light sensing, biomedical imaging, and spectroscopy.
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12
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Chen G, Zhang J, Wang H, Yuan H, Sui X, Zhou H, Zhong D. Fast colloidal synthesis of SnSe 2 nanosheets for flexible broad-band photodetection. CrystEngComm 2021. [DOI: 10.1039/d0ce01774d] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
A new rapid bottom-up colloidal synthetic route has been developed to synthesize SnSe2 nanosheets within 5 min. A SnSe2 nanosheet-based flexible photodetector is fabricated for the first time and the resulting device displays a wide photodetection range and high flexibility.
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Affiliation(s)
- Guihuan Chen
- College of Materials Science and Engineering
- Qingdao University
- Qingdao 266071
- China
| | - Jinhui Zhang
- Hefei National Laboratory for Physical Sciences at Microscale
- Department of Chemistry
- Laboratory of Nanomaterials for Energy Conversion
- University of Science and Technology of China (USTC)
- Hefei
| | - Hongrui Wang
- Hefei National Laboratory for Physical Sciences at Microscale
- Department of Chemistry
- Laboratory of Nanomaterials for Energy Conversion
- University of Science and Technology of China (USTC)
- Hefei
| | - Hua Yuan
- College of Materials Science and Engineering
- Qingdao University
- Qingdao 266071
- China
| | - Xin Sui
- College of Materials Science and Engineering
- Qingdao University
- Qingdao 266071
- China
| | - Hao Zhou
- College of Materials Science and Engineering
- Qingdao University
- Qingdao 266071
- China
| | - Degao Zhong
- College of Physical Sciences
- Qingdao University
- Qingdao 266071
- China
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Yang Y, Liu SC, Li Z, Xue DJ, Hu JS. In-plane anisotropic 2D Ge-based binary materials for optoelectronic applications. Chem Commun (Camb) 2021; 57:565-575. [DOI: 10.1039/d0cc04476h] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
In-plane anisotropic two-dimensional (2D) materials possess unique in-plane anisotropic physical properties arising from their low crystal lattice symmetry.
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Affiliation(s)
- Yusi Yang
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Shun-Chang Liu
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Zongbao Li
- School of Material and Chemical Engineering
- Tongren University
- Tongren 554300
- China
- National Engineering Research Center for Advanced Polymer Processing Technology
| | - Ding-Jiang Xue
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Jin-Song Hu
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
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14
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He T, Wang Z, Cao R, Li Q, Peng M, Xie R, Huang Y, Wang Y, Ye J, Wu P, Zhong F, Xu T, Wang H, Cui Z, Zhang Q, Gu L, Deng HX, Zhu H, Shan C, Wei Z, Hu W. Extrinsic Photoconduction Induced Short-Wavelength Infrared Photodetectors Based on Ge-Based Chalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2006765. [PMID: 33345467 DOI: 10.1002/smll.202006765] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2020] [Revised: 12/03/2020] [Indexed: 06/12/2023]
Abstract
2D layered photodetectors have been widely researched for intriguing optoelectronic properties but their application fields are limited by the bandgap. Extending the detection waveband can significantly enrich functionalities and applications of photodetectors. For example, after breaking through bandgap limitation, extrinsic Si photodetectors are used for short-wavelength infrared or even long-wavelength infrared detection. Utilizing extrinsic photoconduction to extend the detection waveband of 2D layered photodetectors is attractive and desirable. However, extrinsic photoconduction has yet not been observed in 2D layered materials. Here, extrinsic photoconduction-induced short-wavelength infrared photodetectors based on Ge-based chalcogenides are reported for the first time and the effectiveness of intrinsic point defects are demonstrated. The detection waveband of room-temperature extrinsic GeSe photodetectors with the assistance of Ge vacancies is broadened to 1.6 µm. Extrinsic GeSe photodetectors have an excellent external quantum efficiency (0.5%) at the communication band of 1.31 µm and polarization-resolved capability to subwaveband radiation. Moreover, room-temperature extrinsic GeS photodetectors with a detection waveband to the communication band of 1.55 µm further verify the versatility of intrinsic point defects. This approach provides design strategies to enrich the functionalities of 2D layered photodetectors.
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Affiliation(s)
- Ting He
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ruyue Cao
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qing Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yan Huang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Jiafu Ye
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peisong Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhuangzhuang Cui
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - He Zhu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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15
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Bafekry A, Karbasizadeh S, Stampfl C, Faraji M, Hoat DM, Sarsari IA, Feghhi SAH, Ghergherehchi M. Two-dimensional Janus semiconductor BiTeCl and BiTeBr monolayers: a first-principles study on their tunable electronic properties via an electric field and mechanical strain. Phys Chem Chem Phys 2021; 23:15216-15223. [PMID: 34235514 DOI: 10.1039/d1cp01368h] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Motivated by the recent successful synthesis of highly crystalline ultrathin BiTeCl and BiTeBr layered sheets [Debarati Hajra et al., ACS Nano, 2020, 14, 15626], herein for the first time, we carry out a comprehensive study on the structural and electronic properties of BiTeCl and BiTeBr Janus monolayers using density functional theory (DFT) calculations. Different structural and electronic parameters including the lattice constant, bond lengths, layer thickness in the z-direction, different interatomic angles, work function, charge density difference, cohesive energy and Rashba coefficients are determined to acquire a deep understanding of these monolayers. The calculations show good stability of the studied single layers. BiTeCl and BiTeBr monolayers are semiconductors with electronic bandgaps of 0.83 and 0.80 eV, respectively. The results also show that the semiconductor-metal transformation can be induced by increasing the number of layers. In addition, the engineering of the electronic structure is also studied by applying an electric field, and mechanical uniaxial and biaxial strain. The results show a significant change of the bandgaps and that an indirect-direct band-gap transition can be induced. This study highlights the positive prospect for the application of BiTeCl and BiTeBr layered sheets in novel electronic and energy conversion systems.
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Affiliation(s)
- A Bafekry
- Department of Radiation Application, Shahid Beheshti University, Tehran, Iran. and Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - S Karbasizadeh
- Department of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran
| | - C Stampfl
- School of Physics, The University of Sydney, New South Wales 2006, Australia
| | - M Faraji
- Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, Sogutozu Caddesi No. 43, Sogutozu, 06560, Ankara, Turkey
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam and Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | | | - S A H Feghhi
- Department of Radiation Application, Shahid Beheshti University, Tehran, Iran.
| | - M Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Korea.
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16
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Meng X, Fan C, An X, Yuan S, Jing Y, Liu Z, Sun C, Zhang Y, Zhang Z, Wang M, Zheng H, Li E. Aluminum doping effects on photoresponse characteristics of hydrothermal tin disulfide nanosheets. CrystEngComm 2021. [DOI: 10.1039/d1ce00588j] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Photoresponse characteristics of Al-doped SnS2 nanosheets have been improved significantly by aluminum doping, compared to pristine SnS2. The response time was reduced by two orders of magnitude and the responsivity was increased one hundredfold.
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17
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Sarkar AS, Stratakis E. Recent Advances in 2D Metal Monochalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001655. [PMID: 33173730 PMCID: PMC7610304 DOI: 10.1002/advs.202001655] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/04/2020] [Revised: 07/24/2020] [Indexed: 06/11/2023]
Abstract
The family of emerging low-symmetry and structural in-plane anisotropic two-dimensional (2D) materials has been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene analog group IVA-VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in-plane anisotropic electronic and optical response, earth abundance, and environmentally friendly characteristics. In this article, the recent research advancements in the field of anisotropic 2D MMCs are reviewed. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The Review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics, and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this Review also delineates the existing limitations and discusses emerging possibilities and future prospects.
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Affiliation(s)
- Abdus Salam Sarkar
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
| | - Emmanuel Stratakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
- Physics DepartmentUniversity of CreteHeraklionCrete710 03Greece
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18
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Gong Y, Lin Z, Chen YX, Khan Q, Wang C, Zhang B, Nie G, Xie N, Li D. Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges. NANO-MICRO LETTERS 2020; 12:174. [PMID: 34138169 PMCID: PMC7770737 DOI: 10.1007/s40820-020-00515-0] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Accepted: 08/04/2020] [Indexed: 05/25/2023]
Abstract
In recent years, emerging two-dimensional (2D) platinum diselenide (PtSe2) has quickly attracted the attention of the research community due to its novel physical and chemical properties. For the past few years, increasing research achievements on 2D PtSe2 have been reported toward the fundamental science and various potential applications of PtSe2. In this review, the properties and structure characteristics of 2D PtSe2 are discussed at first. Then, the recent advances in synthesis of PtSe2 as well as their applications are reviewed. At last, potential perspectives in exploring the application of 2D PtSe2 are reviewed.
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Affiliation(s)
- Youning Gong
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Zhitao Lin
- Faculty of Information Technology, Macau University of Science and Technology, Macau, 519020, People's Republic of China
| | - Yue-Xing Chen
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Qasim Khan
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada
| | - Cong Wang
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Bin Zhang
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Guohui Nie
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Ni Xie
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Delong Li
- Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
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