One-Step Growth of Amorphous/Crystalline Ga2O3 Phase Junctions for High-Performance Solar-Blind Photodetection

Deep-ultraviolet n-ZnGa2O4/p-GaN heterojunction photodetector fabricated by pulsed laser deposition

Zinc gallium oxide (ZnGa2O4) has attracted considerable interest in deep-ultraviolet photodetectors, due to the ultrawide bandgap, high transmittance in the ultraviolet (UV) region, and excellent environmental stability. In this study, ZnGa2O4 thin films were deposited on p-GaN epi-layers using pulsed laser deposition, resulting in improved crystalline quality. The ZnGa2O4 film exhibited a bandgap of 4.93 eV, calculated through absorption spectra. A heterojunction photodetector (PD) was constructed, demonstrating a rectification effect, an on/off ratio of 12,697 at -5.87 V, a peak responsivity of 14.5 mA/W, and a peak detectivity of 1.14 × 1012 Jones (262 nm, -6 V). The PD exhibited a fast response time (39 ms) and recovery time (30 ms) under 262 nm illumination. The band diagram based on the Anderson model elucidates the photoresponse and carrier transport mechanism. This work paves the way for advancing next-generation optoelectronics.

Self-powered Pt/a-Ga2O3/ITO vertical Schottky junction solar-blind photodetector with excellent detection performance

Self-powered solar-blind photodetectors (PDs) are promising for military and civilian applications owing to convenient operation, easy preparation, and weak-light sensitivity. In the present study, the solar-blind deep-ultraviolet (DUV) photodetector based on amorphous Ga2O3 (a-Ga2O3) and with a simple vertical stack structure is proposed by applying the low-cost magnetron sputtering technology. By tuning the thickness of the amorphous Ga2O3 layer, the device exhibits excellent detection performance. Under 3 V reverse bias, the photodetector achieves a high responsivity of 671A/W, a high detectivity of 2.21 × 1015 Jones, and a fast response time of 27/11 ms. More extraordinary, with the help of the built-in electric field at the interface, the device achieves an excellent performance in detection when self-powered, with an ultrahigh responsivity of 3.69 A/W and a fast response time of 2.6/6.6 ms under 254 nm light illumination. These results demonstrate its superior performance to most of the self-powered Schottky junction UV photodetectors reported to date. Finally, the Pt/a-Ga2O3/ITO Schottky junction photodiode detector is verified as a good performer in imaging, indicating its applicability in such fields as artificial intelligence, machine vision, and solar-blind imaging.

Directional Carrier Transport in Micrometer-Thick Gallium Oxide Films for High-Performance Deep-Ultraviolet Photodetection

Incorporating emerging ultrawide bandgap semiconductors with a metal-semiconductor-metal (MSM) architecture is highly desired for deep-ultraviolet (DUV) photodetection. However, synthesis-induced defects in semiconductors complicate the rational design of MSM DUV photodetectors due to their dual role as carrier donors and trap centers, leading to a commonly observed trade-off between responsivity and response time. Here, we demonstrate a simultaneous improvement of these two parameters in ε-Ga₂O₃ MSM photodetectors by establishing a low-defect diffusion barrier for directional carrier transport. Specifically, using a micrometer thickness far exceeding its effective light absorption depth, the ε-Ga₂O₃ MSM photodetector achieves over 18-fold enhancement of responsivity and simultaneous reduction of the response time, which exhibits a state-of-the-art photo-to-dark current ratio near 10⁸, a superior responsivity of >1300 A/W, an ultrahigh detectivity of >10¹⁶ Jones, and a decay time of 123 ms. Combined depth-profile spectroscopic and microscopic analysis reveals the existence of a broad defective region near the lattice-mismatched interface followed by a more defect-free dark region, while the latter one serves as a diffusion barrier to assist frontward carrier transport for substantially enhancing the photodetector performance. This work reveals the critical role of the semiconductor defect profile in tuning carrier transport for fabricating high-performance MSM DUV photodetectors.

A High-Performance ε-Ga2O3-Based Deep-Ultraviolet Photodetector Array for Solar-Blind Imaging

One of the most important applications of photodetectors is as sensing units in imaging systems. In practical applications, a photodetector array with high uniformity and high performance is an indispensable part of the imaging system. Herein, a photodetector array (5 × 4) consisting of 20 photodetector units, in which the photosensitive layer involves preprocessing commercial ε-Ga₂O₃ films with high temperature annealing, have been constructed by low-cost magnetron sputtering and mask processes. The ε-Ga₂O₃ ultraviolet photodetector unit shows excellent responsivity and detectivity of 6.18 A/W and 5 × 10¹³ Jones, respectively, an ultra-high light-to-dark ratio of 1.45 × 10⁵, and a fast photoresponse speed (0.14/0.09 s). At the same time, the device also shows good solar-blind characteristics and stability. Based on this, we demonstrate an ε-Ga₂O₃-thin-film-based solar-blind ultraviolet detector array with high uniformity and high performance for solar-blind imaging in optoelectronic integration applications.

High-Performance Harsh-Environment-Resistant GaOX Solar-Blind Photodetectors via Defect and Doping Engineering

Gallium oxide (Ga₂ O₃ ), with an ultrawide bandgap, is currently regarded as one of the most promising materials for solar-blind photodetectors (SBPDs), which are greatly demanded in harsh environment, such as space exploration and flame prewarning. However, realization of high-performance SBPDs with high tolerance toward harsh environments based on low-cost Ga₂ O₃ material faces great challenges. Here, defect and doping (DD) engineering towards amorphous GaO_X (a-GaO_X ) has been proposed to obtain ultrasensitive SBPDs for harsh condition application. Serious oxygen deficiency and doping compensation of the engineered a-GaO_X film ensure the high response currents and low dark currents, respectively. Annealing item in nitrogen of DD engineering also incurs the recrystallization of material, formation of nanopores by oxygen escape, and suppression of sub-bandgap defect states. As a result, the tailored GaO_X SBPD based on DD engineering not only harvests a record-high responsivity rejection ratio (R_{254 nm} /R_{365 nm} ) of 1.8 × 10⁷ , 10² times higher detectivity, and 2 × 10² times faster decay speed than the control device, but also keeps a high responsivity, high photo-to-dark current ratio, and sharp imaging capability even at high temperature (280 °C) or high bias (100 V). The proposed DD engineering provides an effective strategy towards highly harsh-environment-resistant GaO_X SBPDs.

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3-Based Heterojunction

Solar blind photodetectors with a cutoff wavelength within the 200-280 nm region is attracting much attention due to their potential civilian and military applications. The avalanche photodetectors (APDs) formed based on wide-bandgap semiconductor Ga₂O₃ are expected to meet emerging technological demands. These devices, however, suffer from limitations associated with the quality of as-grown Ga₂O₃ or the difficulty in alleviating the defects and dislocations. Herein, high-performance APDs incorporating amorphous Ga₂O₃ (a-Ga₂O₃)/ITO heterojunction as the central element have been reliably fabricated at room temperature. The a-Ga₂O₃-based APDs exhibits an ultrahigh responsivity of 5.9 × 10⁴ A/W, specific detectivity of 1.8 × 10¹⁴ Jones, and an external quantum efficiency up to 2.9 × 10⁷% under 254 nm light irradiation at 40 V reverse bias. Notably, the gain could reach 6.8 × 10⁴, indicating the outstanding capability for ultraweak signals detection. The comprehensive superior capabilities of the a-Ga₂O₃-based APDs can be ascribed to the intrinsic carrier transport manners in a-Ga₂O₃ as well as the modified band alignment at the heterojunctions. The trade-off between low processing temperature and superior characteristics of a-Ga₂O₃ promises greater design freedom for realization of wide applications of emerging semiconductor Ga₂O₃ with even better performance since relieving the burden on the integration progress.

Ultra-High Performance Amorphous Ga2 O3 Photodetector Arrays for Solar-Blind Imaging

The growing demand for scalable solar-blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar-blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh-performance metal-semiconductor-metal (MSM) SBPDs based on amorphous (a-) Ga2 O3 via a post-annealing process. The post-annealed MSM a-Ga2 O3 SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain-bandwidth product over 104 at 5 V. The SBPDs also show ultrahigh photo-to-dark current ratio of 3.9 × 107 . Additionally, the PDs demonstrate super-high specific detectivity of 3.9 × 1016 Jones owing to the extremely low noise down to 3.5 fW Hz-1/2 , suggesting high signal-to-noise ratio. Underlying mechanism for such superior photoelectric properties is revealed by Kelvin probe force microscopy and first principles calculation. Furthermore, for the first time, a large-scale, high-uniformity 32 × 32 image sensor array based on the post-annealed a-Ga2 O3 SBPDs is fabricated. Clear image of target object with high contrast can be obtained thanks to the high sensitivity and uniformity of the array. These results demonstrate the feasibility and practicality of the Ga2 O3 PDs for applications in solar-blind imaging, environmental monitoring, artificial intelligence and machine vision.

GaOx@GaN Nanowire Arrays on Flexible Graphite Paper with Tunable Persistent Photoconductivity

Flexible optoelectronic synaptic devices that functionally imitate the neural behavior with tunable optoelectronic characteristics are crucial to the development of advanced bioinspired neural networks. In this work, amorphous oxide-decorated GaN nanowire arrays (GaO_x@GaN NWAs) are prepared on flexible graphite paper. A GaO_x@GaN NWA-based flexible device has tunable persistent photoconductivity (PPC) and shows a conversible fast/slow decay process (SDP). Photoconductivity can be modulated by single or double light pulses with different illumination powers and biases. PPC gives rise to the high-performance SDP such as a long decay time of 2.3 × 10⁵ s. The modulation mechanism is proposed and discussed. Our results reveal an innovative and efficient strategy to produce decorated NWAs on a flexible substrate with tunable optoelectronic properties and exhibit potential for flexible neuromorphic system applications.

Constructing a Z-Scheme Heterojunction Photocatalyst of GaPO4/α-MoC/Ga2O3 without Mingling Type-II Heterojunction for CO2 Reduction to CO

Constructing Z-scheme heterojunction photocatalysts is a prevalent strategy to prolong the lifetime of photoinduced charge carriers without reducing their redox potentials. Nevertheless, these photocatalysts were usually mingled with type-II heterojunction, leading to a decrease in the redox potentials of photoinduced charge carriers. Herein, based on the absolute electronegativity of semiconductors, a Z-scheme heterojunction photocatalyst of GaPO₄/α-MoC/Ga₂O₃ was designed and successfully constructed, in which the formation of type-II heterojunction was prevented between GaPO₄ and Ga₂O₃. In the GaPO₄/α-MoC/Ga₂O₃ photocatalyst, the conduction band (CB) and valance band (VB) potentials and the Fermi level of Ga₂O₃ are higher than those of GaPO₄, respectively. Under irradiation, photoinduced electrons on the CB of GaPO₄ migrate to the electron mediator α-MoC and subsequently recombine with the photoinduced holes of Ga₂O₃, thereby retaining the photoinduced charge carriers with higher redox potentials. As a result, GaPO₄/α-MoC/Ga₂O₃ exhibits a 4-fold enhancement of activity for CO₂ photoreduction, compared to Ga₂O₃. Photocatalytic mechanism studies indicate that superoxide radicals might be an important intermediate for CO₂ reduction to CO. The present work supplies a paradigm to construct a Z-scheme heterostructure without mingling type-II heterojunction via energy band engineering.

Ultrasensitive Flexible Solar-Blind Photodetectors Based on Graphene/Amorphous Ga2O3 van der Waals Heterojunctions

Flexible photodetectors (PDs) have become the latest research interest owing to their potential applications in future implantable sensors and foldable/wearable optoelectronics. Ga₂O₃, an emerging ultrawide band gap semiconductor, is considered as the native photosensitive material for solar-blind PDs. The reported fabrication temperature of Ga₂O₃ films is usually above 600 °C, which hinders its practical application for flexible devices. In this work, flexible PDs based on graphene/amorphous Ga₂O₃ van der Waals heterojunctions are fabricated, which demonstrate promising photoresponse to solar-blind ultraviolet light. The device yields a high photo-to-dark current ratio (∼10⁵) and large responsivity (22.75 A/W) under 254 nm light illumination, which could be ascribed to the efficient photogenerated electron-hole pair separation by the strong built-in field. Moreover, flexible PDs also show long-term environmental stability and outstanding mechanical flexibility without any encapsulation. Our work provides a new potential candidate for realizing cost-effective high-performance flexible optoelectronic applications.