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Deng Z. Angle-Dependent Raman Spectra of Crystal Polymorphs of GaO: A Computational Study. Chemphyschem 2024; 25:e202300129. [PMID: 38095211 DOI: 10.1002/cphc.202300129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 12/13/2023] [Indexed: 01/25/2024]
Abstract
Two crystal polymorphs of GaO consisting of GaO-H and GaO-T monolayers are proposed in this study. Based on the density functional theory calculations, the phonon dispersion demonstrates that both GaO-H and GaO-T monolayers could be stable. The band gaps of GaO-H and GaO-T monolayers are 1.51 and 1.43 eV, respectively. When an external electric field is applied, the band gaps of GaO monolayers are reduced dramatically, down to 0.13 eV with the field of 0.7 V/Å. Because of the decreased symmetry of C3v under an external electric field, more peaks of Raman spectra can be obtained. The angle-dependent Raman spectra ofA ' 1 1 ${{\rm{A}}{{^\prime}}_1^1 }$ andA ' 1 2 ${{\rm{A}}{{^\prime}}_1^2 }$ of GaO-H monolayer, andA 1 g 1 ${{\rm{A}}_{1{\rm{g}}}^1 }$ andA 1 g 2 ${{\rm{A}}_{1{\rm{g}}}^2 }$ of GaO-T monolayer are discussed seperately, with the incident lasers of 488 and 532 nm. Additionally, the Raman intensity distribution shows that the incident light should be parallel to the plane of the GaO monolayer to obtain more comparable Raman spectra. These investigations of the crystal polymorphs of GaO monolayers may guide the experimental investigations of GaO monolayers and potential optoelectronic applications.
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Affiliation(s)
- Zexiang Deng
- School of Science, Guilin University of Aerospace Technology, Guilin, 541004, China
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2
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Guo F, Hu F, Chen L, Tao X, Gao Z. High-Quality Acousto-Optic Modulators with High Diffraction Efficiency, Polarization Extinction Ratio, and Small Insertion Loss Based on a Novel BaO-TeO 2 -WO 3 Glass. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308079. [PMID: 37814538 DOI: 10.1002/adma.202308079] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2023] [Revised: 09/28/2023] [Indexed: 10/11/2023]
Abstract
The Q-switched material and device have attracted extensive attention due to their irreplaceable role in pulsed lasers. In this paper, BaO-TeO2 -WO3 glass (BTW glass) with sound velocity and sound attenuation coefficient of 3422 m-1 s and 0.653 dB cm-1 is successfully selected and fabricated as acousto-optic material. Both free-spaced and fiber-coupled acousto-optic modulation devices based on BTW glass are designed and fabricated. The primary parameters such as diffraction efficiency, polarization extinction ratio, and insertion loss are comparable to or even surpassed that of commercial devices. A 1064 nm pulsed laser is successfully realized with a BTW glass free-spaced acousto-optic modulator. The maximum optical conversion efficiency, the narrowest pulse width, and the maximum single pulse energy of the 1064 nm pulsed laser are 32%, 54 ns, and 242.6 µJ, respectively. Both the device and laser performance indicate that the BTW glass is a remarkable acousto-optic material.
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Affiliation(s)
- Feifei Guo
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Fuai Hu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Lijuan Chen
- School of Physics and Technology, University of Jinan, Jinan, 250022, China
| | - Xutang Tao
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Zeliang Gao
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
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3
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Wang K, Xie Z, Ji J, Song Y, Zhang B, Wang Z. Novel Optical Kerr Switching Photonic Device Based on Nonlinear Carbon Material. MICROMACHINES 2023; 14:2216. [PMID: 38138385 PMCID: PMC10745753 DOI: 10.3390/mi14122216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Revised: 12/01/2023] [Accepted: 12/07/2023] [Indexed: 12/24/2023]
Abstract
In the context of current communication systems, there is an urgent demand for more efficient and higher-speed optical signal processing technologies. Researchers are actively exploring new materials and devices to harness nonlinear optical phenomena, seeking advancements in this field. Nonlinear carbon materials, especially promising 2D materials, have garnered attention for their potential interaction with light and have become integral to the development of all-optical signal processing devices. This study focuses on utilizing a photonic device based on a nonlinear Au/CB composite material for optical Kerr switching. The application of Au/CB as a nonlinear material in the Kerr switch represents a noteworthy advancement, demonstrating its capability to modulate optical signals. By appropriately applying a pump light, the study achieves optical Kerr switching with an extinction ratio of approximately 15 dB in the fully off state of the signal light carrying a 10 GHz analog signal, marking a pioneering achievement in the field to the best of our knowledge. The experimental results, encompassing extinction ratios, signal control, and stability, not only validate the feasibility of this technology but also underscore its potential applicability within optical communication systems. The successful modulation and control of a 10 GHz analog signal showcase the practicality and effectiveness of the Au/CB-based optical Kerr switch. This progress contributes to the continuous evolution of optical Kerr switching, a crucial component in modern optical communication systems. Therefore, we believe that the Au/CB-based optical Kerr switch is an exceptionally promising and stable all-optical signal processing device. As the contemporary communication landscape evolves, the integration of this technology holds the potential to enhance the efficiency and speed of optical signal processing.
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Affiliation(s)
| | | | | | | | | | - Zhenhong Wang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China; (K.W.); (Z.X.); (J.J.); (Y.S.); (B.Z.)
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4
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Zhang W, Liang Y, Gan Y, Huang H, Liang G, Kang Q, Leng X, Jing Q, Wen Q. VTe 2: Broadband Saturable Absorber for Passively Q-Switched Lasers in the Near- and Mid-Infrared Regions. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38038267 DOI: 10.1021/acsami.3c10790] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/02/2023]
Abstract
In this study, we demonstrate the fabrication of a novel 2D transition metal dichalcogenide, VTe2, into a saturable absorber (SA) by using the liquid phase exfoliation method. Furthermore, the first-principles calculations were conducted to elucidate the electronic band structures and absorption spectrum. The nonlinear optical absorption properties of VTe2 at 1.0, 2.0, and 3.0 μm were measured using open-aperture Z-scan and P-scan methods, which showed saturation intensities and modulation depths of 95.57 GW/cm2 and 9.24%, 3.11 GW/cm2 and 7.26%, and 15.8 MW/cm2 and 17.1%, respectively. Furthermore, in the realm of practical implementation, the achievement of stable passively Q-switched (PQS) lasers employing SA composed of few-layered VTe2 nanosheets has manifested itself with broadband operating wavelengths from 1.0 to ∼3.0 μm. Specifically, PQS laser operations from near-infrared to mid-infrared with pulse durations of 195 and 563 ns for 1.0 and 2.0 μm solid-state lasers, respectively, and 749 ns for an Er3+-doped fluoride fiber laser at 3.0 μm were obtained. Our experimental results demonstrate that VTe2 is a potential broadband SA device for achieving PQS lasers. To the best of our knowledge, this is the first demonstration of using VTe2 as an SA in PQS lasers in the near- and mid-infrared regions, which highlights the potential of VTe2 for future research and applications in optoelectronic devices.
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Affiliation(s)
- Wenyao Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yuxian Liang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yiyu Gan
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Hongfu Huang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Guowen Liang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Qi Kang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Xudong Leng
- Xinjiang Key for Laboratory of Solid state Physics and Devices, Xinjiang University, 777 Huarui Street, Urumqi 830017, China
| | - Qun Jing
- Xinjiang Key for Laboratory of Solid state Physics and Devices, Xinjiang University, 777 Huarui Street, Urumqi 830017, China
| | - Qiao Wen
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
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5
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Fan W, Han Y, Chen S, Sun S, Zhao X, Bai C, Wang G, Lu C, Zhang W, Fu S, Zhang H. Nanosized indium selenide saturable absorber for multiple solitons operation in Er 3+-doped fiber laser. OPTICS EXPRESS 2023; 31:10176-10190. [PMID: 37157571 DOI: 10.1364/oe.484219] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
With the advances in the field of ultrafast photonics occurring so fast, the demand for optical modulation devices with high performance and soliton lasers which can realize the evolution of multiple soliton pulses is gradually increasing. Nevertheless, saturable absorbers (SAs) with appropriate parameters and pulsed fiber lasers which can output abundant mode-locking states still need to be further explored. Due to the special band gap energy values of few-layer indium selenide (InSe) nanosheets, we have prepared a SA based on InSe on a microfiber by optical deposition. In addition, we demonstrate that our prepared SA possesses a modulation depth and saturable absorption intensity about 6.87% and 15.83 MW/cm2, respectively. Then, multiple soliton states are obtained by dispersion management techniques, including regular solitons, and second-order harmonic mode-locking solitons. Meanwhile, we have obtained multi-pulse bound state solitons. We also provide theoretical basis for the existence of these solitons. The results of the experiment show that the InSe has the potential to be an excellent optical modulator because of its excellent saturable absorption properties. This work also is important for improving the understanding and knowledge of InSe and the output performance of fiber lasers.
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Li J, Wang L, Chen Y, Li Y, Zhu H, Li L, Tong L. Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:147. [PMID: 36616059 PMCID: PMC9824543 DOI: 10.3390/nano13010147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Revised: 12/25/2022] [Accepted: 12/26/2022] [Indexed: 06/17/2023]
Abstract
Interface interactions in 2D vertically stacked heterostructures play an important role in optoelectronic applications, and photodetectors based on graphene/InSe heterostructures show promising performance nowadays. However, nonlinear optical property studies based on the graphene/InSe heterostructure are insufficient. Here, we fabricated a graphene/InSe heterostructure by mechanical exfoliation and investigated the optically induced charge transfer between graphene/InSe heterostructures by taking photoluminescence and pump-probe measurements. The large built-in electric field at the interface was confirmed by Kelvin probe force microscopy. Furthermore, due to the efficient interfacial carrier transfer driven by the built-in electric potential (~286 meV) and broadband nonlinear absorption, the application of the graphene/InSe heterostructure in a mode-locked laser was realized. Our work not only provides a deeper understanding of the dipole orientation-related interface interactions on the photoexcited charge transfer of graphene/InSe heterostructures, but also enriches the saturable absorber family for ultrafast photonics application.
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Affiliation(s)
- Jialin Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Lizhen Wang
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Yuzhong Chen
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Yujie Li
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Haiming Zhu
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Linjun Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute, Zhejiang University, Jiaxing 314000, China
| | - Limin Tong
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute, Zhejiang University, Jiaxing 314000, China
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7
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Sun S, Tang Q, Yu T, Gao Y, Zhang W, Zhou L, Elhegazy H, He K. Fabrication of g-C 3N 4@Bi 2MoO 6@AgI floating sponge for photocatalytic inactivation of Microcystis aeruginosa under visible light. ENVIRONMENTAL RESEARCH 2022; 215:114216. [PMID: 36057334 DOI: 10.1016/j.envres.2022.114216] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2022] [Revised: 08/07/2022] [Accepted: 08/23/2022] [Indexed: 06/15/2023]
Abstract
In this work, a floating photocatalyst was constructed by loading g-C3N4@Bi2MoO6@AgI (GBA) nanocomposite on a modified polyurethane sponge via a simple dip-coating method and applied for the inactivation of Microcystis aeruginosa under visible light. GBA ternary photocatalyst was fabricated successfully and the morphology, structure, chemical state, and optical properties were characterized systematically. The floating catalyst achieved near 100% removal efficiency of algae cells under 6 h visible light irradiation and also could be retrieved and used at least three times repeatedly. The influences of various conditions on photocatalytic performance such as loading content of nanoparticles, algae density, and concentration of natural organic matters were also studied, which revealed that the GBA floating catalyst exhibited excellent photocatalytic performance of algae removal under different conditions. Furthermore, the physiological characteristics of algae cells during the photocatalytic process, including cell morphology, membrane permeability, Zeta potential, photosynthetic system, antioxidant system, and the metabolic activity were investigated. Results confirmed that the algae cells were severely damaged during the photocatalytic inactivation and the normal physiological functions were significantly affected, which resulted in the death of algae cells at last. Finally, a possible photocatalytic inactivation mechanism of algae cells was proposed. In summary, GBA floating catalyst can effectively inactivate Microcystis aeruginosa under visible light, which confirmed the high efficiency of the novel photocatalytic algae removal technology. Meanwhile, the recyclable floating material also makes the practical application in eutrophic waters of the algae removal technology possible.
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Affiliation(s)
- Shiquan Sun
- School of Hydraulic and Environmental Engineering, Changsha University of Science & Technology, Changsha 410114, China; Key Laboratory of Dongting Lake Aquatic Eco-Environmental Control and Restoration of Hunan Province, Changsha 410114, China.
| | - Qingxin Tang
- School of Hydraulic and Environmental Engineering, Changsha University of Science & Technology, Changsha 410114, China; Key Laboratory of Dongting Lake Aquatic Eco-Environmental Control and Restoration of Hunan Province, Changsha 410114, China
| | - Taiping Yu
- Yangtze Ecology and Environment Co. Ltd., Wuhan 430062, China
| | - Yang Gao
- School of Hydraulic and Environmental Engineering, Changsha University of Science & Technology, Changsha 410114, China; Key Laboratory of Dongting Lake Aquatic Eco-Environmental Control and Restoration of Hunan Province, Changsha 410114, China
| | - Wei Zhang
- School of Hydraulic and Environmental Engineering, Changsha University of Science & Technology, Changsha 410114, China; Key Laboratory of Dongting Lake Aquatic Eco-Environmental Control and Restoration of Hunan Province, Changsha 410114, China
| | - Lean Zhou
- School of Hydraulic and Environmental Engineering, Changsha University of Science & Technology, Changsha 410114, China; Key Laboratory of Dongting Lake Aquatic Eco-Environmental Control and Restoration of Hunan Province, Changsha 410114, China
| | - Hosam Elhegazy
- Department of Structural Engineering and Construction Management, Faculty of Engineering and Technology, Future University in Egypt, Egypt
| | - Kai He
- School of Hydraulic and Environmental Engineering, Changsha University of Science & Technology, Changsha 410114, China; Key Laboratory of Dongting Lake Aquatic Eco-Environmental Control and Restoration of Hunan Province, Changsha 410114, China
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8
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Liu F, Yu Q, Xue J, Shu B, Zheng C, Deng H, Zhang X, Gong P, Chen M, Lin H, Wang J, Zhu S, Wu J. Bimetallic Alloys b-As xP 1-x at High Concentration Differences: Ideal for Photonic Devices. J Phys Chem Lett 2022; 13:9501-9509. [PMID: 36200790 DOI: 10.1021/acs.jpclett.2c01973] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Black arsenic phosphorus (b-AsxP1-x) is expected to be one of the primary materials for future photonic devices. However, the x-factor is randomly estimated and applied in photonic devices in current studies, rather than systematically analyzing it for a comprehensive understanding. Herein, AsxP1-x switches from a direct band gap semiconductor to an indirect band gap one at x = 0.75. AsxP1-x at x ≤ 0.25 is capable of broadband absorption, while b-AsxP1-x at x ≥ 0.75 can only absorb at specific wavelengths in the perspective of the electron energy transition. Additionally, the optoelectronic response of the integral field-effect transistor configurations constructed with b-AsxP1-x is investigated systematically as a photodetector device. The photonic response characteristics show high polarization sensitivity at x ≥ 0.75, but a typical circuit system signal at x ≤ 0.25. These results suggest that b-AsxP1-x with high concentration differences is a perfect candidate for photonic material.
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Affiliation(s)
- Fangqi Liu
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, College of Science, The State Key Laboratory for Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Qiang Yu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
- Key Laboratory of Nanodevices and Applications and Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Junfei Xue
- Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Fudan University, Shanghai 200433, China
| | - Bowang Shu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Cangdong Zheng
- Key Laboratory of Metallurgical Equipment and Control Technology, Key Laboratory of Mechanical Transmission and Manufacturing Engineering, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Xiaolin Zhang
- Key Laboratory of Metallurgical Equipment and Control Technology, Key Laboratory of Mechanical Transmission and Manufacturing Engineering, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Pengwei Gong
- Key Laboratory of Metallurgical Equipment and Control Technology, Key Laboratory of Mechanical Transmission and Manufacturing Engineering, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Mingyan Chen
- Hongzhiwei Technology (Shanghai) Co. Ltd., 1599 Xinjinqiao Road, Pudong, Shanghai 201206, China
| | - Hai Lin
- College of Physical Science & Technology, Central China Normal University, Wuhan 430079, China
| | - Jian Wang
- Helmholtz Institute Ulm, Ulm D89081, Germany
| | - Sicong Zhu
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, College of Science, The State Key Laboratory for Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China
- Key Laboratory of Metallurgical Equipment and Control Technology, Key Laboratory of Mechanical Transmission and Manufacturing Engineering, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
- Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Fudan University, Shanghai 200433, China
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Lv H, Chu L, Wang S, Sun S, Sun X, Jia Y, Chen F. Layer-dependent nonlinear optical properties of two-dimensional InSe and its applications in waveguide lasers. OPTICS EXPRESS 2022; 30:23986-23999. [PMID: 36225069 DOI: 10.1364/oe.462811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2022] [Accepted: 06/06/2022] [Indexed: 06/16/2023]
Abstract
The thickness-dependent third-order nonlinear optical properties of two-dimensional β-InSe and its potential applications as a saturable absorber in pulsed laser generation are investigated. InSe sheets with different layers are prepared by the chemical vapor deposition. Using open-aperture femtosecond Z-scan technique at 1030 nm, the modulation depth and nonlinear absorption coefficient are obtained to be 36% and -1.6 × 104 cm·GW-1, respectively. The intrinsic mechanism of the layer-dependent energy band structure evolution is analyzed based on density functional theory, and the theoretical analysis is consistent with the experimental results. Based on a waveguide cavity, a Q-switched mode-locked laser at 1 µm with a repetition frequency of 8.51 GHz and a pulse duration of 28 ps is achieved by utilizing the layered InSe as a saturable absorber. This work provides an in-depth understanding of layer-dependent properties of InSe and extends its applications in laser technology for compact light devices.
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10
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Synthesis of Hexagonal Structured GaS Nanosheets for Robust Femtosecond Pulse Generation. NANOMATERIALS 2022; 12:nano12030378. [PMID: 35159722 PMCID: PMC8839219 DOI: 10.3390/nano12030378] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2021] [Revised: 01/04/2022] [Accepted: 01/21/2022] [Indexed: 02/04/2023]
Abstract
Gallium sulfide (GaS), with a hexagonal structure, has received extensive attention due to its graphene-like structure and derived optical properties. Here, high-quality GaS was obtained via chemical vapor synthesis and then prepared as a saturable absorber by the stamp-assisted localization-transfer technique onto fiber end face. The stability of the material and the laser damage threshold are maintained due to the optimized thickness and the cavity integration form. The potential of the GaS for nonlinear optics is explored by constructing a GaS-based Erbium-doped mode-locked fiber laser. Stable femtosecond (~448 fs) mode-locking operation of the single pulse train is achieved, and the robust mode-locked operation (>30 days) was recorded. Experimental results show the potential of GaS for multi-functional ultrafast high-power lasers and promote continuous research on graphene-like materials in nonlinear optics and photonics.
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Chen J, Wang J, Yu Q, Wang T, Zhang Y, Chen C, Li C, Wang Z, Zhu S, Ding X, Wang L, Wu J, Zhang K, Zhou P, Jiang Z. Sub-Band Gap Absorption and Optical Nonlinear Response of MnPSe 3 Nanosheets for Pulse Generation in the L-Band. ACS APPLIED MATERIALS & INTERFACES 2021; 13:13524-13533. [PMID: 33706518 DOI: 10.1021/acsami.0c21411] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) materials have attracted extensive attention for use in fiber lasers for pulse generation due to their unique nonlinear optical properties. While 2D materials with tunable band gaps hold promise as versatile saturable absorber materials, their L-band (long-band) pulse generation capability remains challenging. Metal phosphorus trichalcogenides (MPX3) have recently attracted the attention of researchers and shown potential for sub-band gap saturable absorption in the L-band due to their high diversity of chemical components and band structural complexity. Herein, high-quality MnPSe3 is synthesized and exhibits broad-band linear and nonlinear absorption with the modulation depth and saturation intensity of 5.4% and 0.295 MW/cm2, respectively. Moreover, a stable passive pulse generation in the L-band is demonstrated in a fiber laser. The wavelengths of the passively pulsed laser at different pump powers are recorded, featuring a fixed central wavelength located at around 1602 nm with a maximum output power of 19.54 mW. This research promotes the realization of L-band pulsed lasers based on 2D materials, inspiring further exploration of the unique properties of the MPX3 family.
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Affiliation(s)
- Jie Chen
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Jin Wang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Qiang Yu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Tao Wang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Cheng Chen
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Chang Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Zhiqiang Wang
- Advanced Photonic Technology Lab, College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Sicong Zhu
- College of Science and Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Xianguang Ding
- Centre for Advanced 2D Materials, Graphene Research Centre, National University of Singapore, 117576 Singapore
| | - Linjun Wang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Pu Zhou
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Zongfu Jiang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
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12
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Hao Z, Jiang B, Hou Y, Li C, Yi R, Ji Y, Li J, Li A, Gan X, Zhao J. Continuous-wave pumped frequency upconversions in an InSe-integrated microfiber. OPTICS LETTERS 2021; 46:733-736. [PMID: 33577501 DOI: 10.1364/ol.413451] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2020] [Accepted: 01/07/2021] [Indexed: 06/12/2023]
Abstract
We report the achievement of continuous-wave (CW)-pumped second-harmonic generation (SHG) and sum frequency generation (SFG) in a layered indium selenide (InSe)-integrated microfiber. As a result of the strong interaction between the InSe nanosheets and the evanescent field, the second-order nonlinear processes are greatly enhanced in the InSe-integrated microfiber pumped by a few milliwatt CW lasers. The experimental results reveal that the intensities of SHG and SFG are quadratic and linear dependencies with the incident pump power, respectively, which is consistent with theoretical predictions. Additionally, the SHG intensity is strongly polarization-dependent on the nonaxisymmetrical distribution of the InSe nanosheets around the microfiber, providing the possibility of the SHG-polarized manipulation. The proposed device has the potential to be integrable into all-fiber systems for nonlinear applications.
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Cao L, Chu H, Pan H, Wang R, Li Y, Zhao S, Li D, Zhang H, Li D. Nonlinear optical absorption features in few-layered hybrid Ti 3C 2(OH) 2/Ti 3C 2F 2 MXene for optical pulse generation in the NIR region. OPTICS EXPRESS 2020; 28:31499-31509. [PMID: 33115122 DOI: 10.1364/oe.406035] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2020] [Accepted: 09/28/2020] [Indexed: 06/11/2023]
Abstract
In the present work, we report the structural properties of the two dimensional (2D) few-layered Ti3C2(OH)2/Ti3C2F2 hybrid MXene synthesized via the HF acid etching method. Various characterizations were exploited to demonstrate the 2D layered structural properties of the hybrid MXene membranes. The density functional theory (DFT) simulation indicated the hybrid MXene possessed the small enough band gap, which could benefit the nonlinear optical applications in the infrared region. By the conventional open-aperture Z-scan technique, typical nonlinear saturable features were measured. Consequently, the hybrid MXene membranes exhibited the excellent saturable absorption properties at 1 and 1.3 µm. As a saturable absorber, passively Q-switched Nd:YVO4 lasers with the prepared hybrid MXene membranes were realized at 1 and 1.3 µm, respectively, producing the stable Q-switching pulse train with a shortest duration of 130 ns.
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Chu H, Pan Z, Wang X, Zhao S, Li G, Cai H, Li D. Passively Q-switched Tm:CaLu 0.1Gd 0.9AlO 4 laser at 2 µm with hematite nanosheets as the saturable absorber. OPTICS EXPRESS 2020; 28:16893-16899. [PMID: 32549502 DOI: 10.1364/oe.395312] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2020] [Accepted: 05/15/2020] [Indexed: 06/11/2023]
Abstract
We report the first passive Q-switching operation at 1.95 µm utilizing the disordered Tm:CaLu0.1Gd0.9AlO4 (Tm:CLGA) crystal and the hematite (α-Fe2O3) nanosheets as the saturable absorber. The nonlinear saturable absorption properties of the hematite nanosheets were investigated by the conventional Z-scan technology. The modulation depth of 14.3% with the low saturation intensity of 205 kW/cm2 was obtained, indicating that the hematite could be a suitable saturable absorber for the mid-infrared pulse generation. Using the disordered Tm:CLGA crystal as the gain medium, the passive Q-switching operation could be realized with the hematite nanosheets as the saturable absorber, producing the shortest pulse duration of 402 ns with a repetition rate of 76 kHz. The experimental results convinced us that the hematite nanosheets could be of great interest in the optical pulse generation in the mid-infrared region.
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