Synthesis of Cyclopentadithiophene-Diketopyrrolopyrrole Donor-Acceptor Copolymers for High-Performance Nonvolatile Floating-Gate Memory Transistors with Long Retention Time

A floating-gate field-effect transistor memory device based on organic crystals with a built-in tunneling dielectric by a one-step growth strategy

A floating-gate organic field-effect transistor (FG-OFET) memory device is becoming a promising candidate for emerging non-volatile memory applications due to the advantages of its sophisticated data-storage mechanism and reliable long-term data retention capacity. However, a conventional FG-OFET memory device suffers from complex fabrication technologies and poor mechanical flexibility, which limits its practical applications. Here, we propose a facile one-step liquid-surface drag coating strategy to fabricate a layered stack of 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (Dif-TES-ADT) crystals and high-quality insulating polymer polystyrene (PS). The liquid surface enhances the spreading area of an organic solution and facilitates the unidirectional growth of organic crystals. In the bilayer-structured blend, the bottom PS polymer and the top Dif-TES-ADT semiconductor serve as a tunneling dielectric and an active memory layer of an FG-OFET memory device, respectively. Consequently, a flexible FG-OFET memory device with a large memory window of 41.4 V, a long retention time of 5000 s, and a high current ON/OFF ratio of 105 could be achieved, showing the best performance ever reported for organic thin film-based FG-OFET memory devices. In addition, multi-level data storage (3 bits per cell) can be achieved by tuning the gate voltage magnitude. Our work not only provides a general strategy for the growth of high-quality organic crystals, but also paves the way towards high-performance flexible memory devices.

Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics

The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

Electrohydrodynamic-Jet-Printed Phthalimide-Derived Conjugated Polymers for Organic Field-Effect Transistors and Logic Gates

A π-conjugated polymer semiconductor, PBDTTTffPI, was synthesized for use as an organic semiconductor suitable for electrohydrodynamic (EHD) jet printing technology. Bulky alkylation of the polymer gave PBDTTTffPI good solubility in several organic solvents. EHD jet printing using PBDTTTffPI ink produced direct patterns of polymer semiconductors while maintaining smooth surface morphologies and crystal structures similar to those of spin-coated PBDTTTffPI films. EHD-jet-printed PBDTTTffPI was appropriate for use as a semiconductor layer in organic field-effect transistors (OFETs) and logic gates. OFETs that used EHD-jet-printed PBDTTTffPI had better electrical characteristics than devices that used spin-coated semiconductor films. When a dielectric material (Al₂O₃) with a high dielectric constant was introduced, the jet-printed PBDTTTffPI operated well at low voltages. Integrated devices such as inverters, NAND gates, and NOR gates were fabricated by printing PBDTTTffPI patterns and showed good switching behaviors. Therefore, the use of printable PBDTTTffPI provides an advance toward fabrication of practical integrated arrays in next-generation devices.

Controlling Energy Gaps of π-Conjugated Polymers by Multi-Fluorinated Boron-Fused Azobenzene Acceptors for Highly Efficient Near-Infrared Emission

We demonstrate that multi-fluorinated boron-fused azobenzene (BAz) complexes can work as a strong electron acceptor in electron donor-acceptor (D-A) type π-conjugated polymers. Position-dependent substitution effects were revealed, and the energy level of the lowest unoccupied molecular orbital (LUMO) was critically decreased by fluorination. As a result, the obtained polymers showed near-infrared (NIR) emission (λ_PL =758-847 nm) with high absolute photoluminescence quantum yield (Φ_PL =7-23%) originating from low-lying LUMO energy levels of the BAz moieties (-3.94 to -4.25 eV). Owing to inherent solid-state emissive properties of the BAz units, deeper NIR emission (λ_PL =852980 nm) was detected in film state. Clear solvent effects prove that the NIR emission is from a charge transfer state originating from a strong D-A interaction. The effects of fluorination on the frontier orbitals are well understandable and predictable by theoretical calculation with density functional theory. This study demonstrates the effectiveness of fluorination to the BAz units for producing a strong electron-accepting unit through fine-tuning of energy gaps, which can be the promising strategy for designing NIR absorptive and emissive materials.

Keep glowing and going: recent progress in diketopyrrolopyrrole synthesis towards organic optoelectronic materials

Recent progress in the syntheses of DPP derivatives is summarized as well as the structure–property relationships of the derivatives, including the syntheses of DPP cores, N-functionalization reactions, and π-extensions on and along the DPP cores.