Self-Powered Visible-Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes

Self-Powering Sensory Device with Multi-Spectrum Image Realization for Smart Indoor Environments

The development of organic-based optoelectronic technologies for the indoor Internet of Things market, which relies on ambient energy sources, has increased, with organic photovoltaics (OPVs) and photodetectors (OPDs) considered promising candidates for sustainable indoor electronic devices. However, the manufacturing processes of standalone OPVs and OPDs can be complex and costly, resulting in high production costs and limited scalability, thus limiting their use in a wide range of indoor applications. This study uses a multi-component photoactive structure to develop a self-powering dual-functional sensory device with effective energy harvesting and sensing capabilities. The optimized device demonstrates improved free-charge generation yield by quantifying charge carrier dynamics, with a high output power density of over 81 and 76 µW cm-2 for rigid and flexible OPVs under indoor conditions (LED 1000 lx (5200 K)). Furthermore, a single-pixel image sensor is demonstrated as a feasible prototype for practical indoor operating in commercial settings by leveraging the excellent OPD performance with a linear dynamic range of over 130 dB in photovoltaic mode (no external bias). This apparatus with high-performance OPV-OPD characteristics provides a roadmap for further exploration of the potential, which can lead to synergistic effects for practical multifunctional applications in the real world by their mutual relevance.

Negative Photoresponse Switching via Electron-Hole Recombination at The Type III Junction of MoTe2 Channel/SnS2 Top Layer

Extensive study on 2D van der Waals (vdW) heterojunctions has primarily focused on PN diodes for fast-switching photodetection, while achieving the same from 2D channel phototransistors is rare despite their other advantages. Here, a high-speed phototransistor featuring a type III junction between p-MoTe2 channel and n-SnS2 top layer is designed. The photodetecting device operates with a basis of negative photoresponse (NPR), which originates from the recombination of photoexcited electrons in n-SnS2 and accumulated holes in the p-MoTe2 channel. For the NPR to occur, high-energy photons capable of exciting SnS2 (band gap ≈2.2 eV) are found to be effective because lower-energy photons simply penetrate the SnS2 top layer only to excite MoTe2 , leading to normal positive photoresponse (PPR) which is known to be slow due to the photogating effects. The NPR transistor showcases 0.5 ms fast photoresponses and a high responsivity over 5000 A W-1 . More essentially, such carrier recombination mechanism is clarified with three experimental evidences. The phototransistor is finally modified with Au contact on n-SnS2 , to be a more practical device displaying voltage output. Three different photo-logic states under blue, near infrared (NIR), and blue-NIR mixed photons are demonstrated using the voltage signals.

Photo-assisted Zn-air battery-driven self-powered aptasensor based on the 2D/2D Schottky heterojunction of cadmium-doped molybdenum disulfide and Ti3C2Tx nanosheets for the sensitive detection of penicillin G

A novel photocatalyzed Zn-air battery-driven (ZAB)-based aptasensor has been manufactured using the two dimensional (2D)/2D Schottky heterojunction as photocathode and Zn plate as photoanode. It was then employed to sensitively and selectively detect penicillin G (PG) in the complex environment. The 2D/2D Schottky heterojunction was established by the in situ growth of cadmium-doped molybdenum disulfide nanosheets (Cd-MoS₂ NSs) around Ti₃C₂T_x NSs (denoted as Cd-MoS₂@Ti₃C₂T_x) by using phosphomolybdic acid (PMo₁₂) as precursor, thioacetamide as sulfur source, and Cd(NO₃)₂ as a doping agent through the hydrothermal method. The gained Cd-MoS₂@Ti₃C₂T_x heterojunction possessed contact interface, hierarchical structure, and plenty of sulfur and oxygen vacancies, thus showing the enhanced separation ability of photocarriers and electron transfer. Due to the enhanced UV-vis light adsorption ability, high photoelectric conversion efficiency, and exposed catalytic active sites, the constructed photocatalyzed ZAB displayed a boosted output voltage of 1.43 V under UV-vis light irradiation. The developed ZAB-driven self-powered aptasensor demonstrated an ultralow detection limit of 0.06 fg mL^-1 within a PG concentration ranged from 1.0 fg mL^-1 to 0.1 ng mL^-1, as deduced from the power density-current curves, along with high specificity, good stability and promising reproducibility, as well as excellent regeneration ability and wide applicability. The present work provided an alternative analysis method for the sensitive analysis of antibiotics based on the portable photocatalyzed ZAB-driven self-powered aptasensor.

Boosting internal quantum efficiency via ultrafast triplet transfer to 2H-MoTe2 film

Organic systems often allow to create two triplet spin states (triplet excitons) by converting an initially excited singlet spin state (a singlet exciton). An ideally designed organic/inorganic heterostructure could reach the photovoltaic energy harvest over the Shockley-Queisser (S-Q) limit because of the efficient conversion of triplet excitons into charge carriers. Here, we demonstrate the molybdenum ditelluride (MoTe₂)/pentacene heterostructure to boost the carrier density via efficient triplet transfer from pentacene to MoTe₂ using ultrafast transient absorption spectroscopy. We observe carrier multiplication by nearly four times by doubling carriers in MoTe₂ via the inverse Auger process and subsequently doubling carriers via triplet extraction from pentacene. We also verify efficient energy conversion by doubling the photocurrent in the MoTe₂/pentacene film. This puts a step forward to enhancing photovoltaic conversion efficiency beyond the S-Q limit in the organic/inorganic heterostructures.

Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance

In recent years, two-dimensional (2D) nonlayered Bi₂O₂Se-based electronics and optoelectronics have drawn enormous attention owing to their high electron mobility, facile synthetic process, stability to the atmosphere, and moderate narrow band gaps. However, 2D Bi₂O₂Se-based photodetectors typically present large dark current, relatively slow response speed, and persistent photoconductivity effect, limiting further improvement in fast-response imaging sensors and low-consumption broadband detection. Herein, a Bi₂O₂Se/2H-MoTe₂ van der Waals (vdWs) heterostructure obtained from the chemical vapor deposition (CVD) approach and vertical stacking is reported. The proposed type-II staggered band alignment desirable for suppression of dark current and separation of photoinduced carriers is confirmed by density functional theory (DFT) calculations, accompanied by strong interlayer coupling and efficient built-in potential at the junction. Consequently, a stable visible (405 nm) to near-infrared (1310 nm) response capability, a self-driven prominent responsivity (R) of 1.24 A·W^-1, and a high specific detectivity (D*) of 3.73 × 10¹¹ Jones under 405 nm are achieved. In particular, R, D*, fill factor, and photoelectrical conversion efficiency (PCE) can be enhanced to 4.96 A·W^-1, 3.84 × 10¹² Jones, 0.52, and 7.21% at V_g = -60 V through a large band offset originated from the n⁺-p junction. It is suggested that the present vdWs heterostructure is a promising candidate for logical integrated circuits, image sensors, and low-power consumption detection.

Organic photodiode with dual functions of indoor photovoltaic and high-speed photodetector

Energy harvesting and light detection are key technologies in various emerging optoelectronic applications. The high absorption capability and bandgap tunability of organic semiconductors make them promising candidates for such applications. Herein, a poly(3-hexylthiophene-2,5-diyl) (P3HT):indene-C60 bisadduct (ICBA) bulk heterojunction-based organic photodiode (OPD) was reported, demonstrating dual functionality as an indoor photovoltaic (PV) and as a high-speed photodetector. This OPD demonstrated decent indoor PV performance with a power conversion efficiency (PCE) of (11.6 ± 0.5)% under a light emitting diode (LED) lamp with a luminance of 1000 lx. As a photodetector, this device exhibited a decent photoresponsivity of 0.15 A/W (green light) with an excellent linear dynamic range (LDR) of over 127 dB within the optical power range of 3.74 × 10^-7 to 9.6 × 10^-2 W/cm². Furthermore, fast photoswitching behaviors could be observed with the rising/falling times of 14.5/10.4 μs and a cutoff (3 dB) frequency of 37 kHz. These results might pave the way for further development of organic optoelectronic applications.

Vertical 1D/2D Heterojunction Architectures for Self-Powered Photodetection Application: GaN Nanorods Grown on Transition Metal Dichalcogenides

Van der Waals (vdW) heterojunctions based on two-dimensional (2D) transition metal dichalcogenide (TMD) materials have attracted the attention of researchers to conduct fundamental investigations on emerging physical phenomena and expanding diverse nano-optoelectronic devices. Herein, the quasi-van der Waals epitaxial (QvdWE) growth of vertically aligned one-dimensional (1D) GaN nanorod arrays (NRAs) on TMDs/Si substrates is reported, and their vdW heterojunctions in the applications of high-performance self-powered photodetection are demonstrated accordingly. Such 1D/2D hybrid systems fully combine the advantages of the strong light absorption of 1D GaN nanoarrays and the excellent electrical properties of 2D TMD materials, boosting the photogenerated current density, which demonstrates a light on/off ratio above 10⁵. The device exhibits a competitive photovoltaic photoresponsivity over 10 A W^-1 under a weak detectable light signal without any external bias, which is attributed to the efficient photogenerated charge separation under the strong built-in potential from the type-II band alignment of GaN NRAs/TMDs. This work presents a QvdWE route to prepare 1D/2D heterostructures for the fabrication of self-powered photodetectors, which shows promising potentials for practical applications of space communications, sensing networks, and environmental monitoring.

Integral imaging using a MoS2 Schottky diode

We report the performance of a MoS₂ Schottky diode on three-dimensional (3D) integral imaging. The MoS₂ Schottky diode has asymmetric Pt electrodes for the Schottky contact and Ti/Au electrodes for the ohmic contact. Such a Schottky diode exhibits an excellent rectification ratio of 10³, a broad spectral photoresponse in the 450-700 nm range, an almost ideal linearity of 1, and a wide linear dynamic range of 106 dB. We successfully conduct object pickup experiments using integral imaging and validate the feasibility of a single-pixel imager as a 3D image sensor.

Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids

Exploration of van der Waals heterostructures in the field of optoelectronics has produced photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate engineering of these heterostructures allows us to exploit multiple light-to-electricity conversion mechanisms, ranging from photovoltaic, photoconductive to photogating processes. These mechanisms manifest in different sensitivity and speed of photoresponse. In addition, integrating graphene-based hybrid structures with photonic platforms provides a high gain-bandwidth product, with bandwidths ≫1 GHz. In this review, we discuss the progression in the field of photodetection in 2D hybrids. We emphasize the physical mechanisms at play in diverse architectures and discuss the origin of enhanced photoresponse in hybrids. Recent developments in 2D photodetectors based on room temperature detection, photon-counting ability, integration with Si and other pressing issues, that need to be addressed for these materials to be integrated with industrial standards have been discussed.

Enhanced Photoresponse and Wavelength Selectivity by SILAR-Coated Quantum Dots on Two-Dimensional WSe2 Crystals

High-performance photodetectors play crucial roles as an essential tool in many fields of science and technology, such as photonics, imaging, spectroscopy, and data communications. Demands for desired efficiency and low-cost new photodetectors through facile manufacturing methods have become a long-standing challenge. We used a simple successive ionic layer adsorption and reaction (SILAR) method to synthesize CdS, CdSe, and PbS nanoparticles directly grown on WSe2 crystalline flakes. In addition to the excellent wavelength selectivity for (30 nm) CdS, (30 nm) CdSe, and (6 nm) PbS/WSe2 heterostructures, the hybrid devices presented an efficient photodetector with a photoresponsivity of 48.72 A/W, a quantum efficiency of 71%, and a response time of 2.5-3.5 ms. Considering the energy band bending structure and numerical simulation data, the electric field distribution at interfaces and photocarrier generation/recombination rates have been studied. The introduced fabrication strategy is fully compatible with the semiconductor industry process, and it can be used as a novel method for fabricating wavelength-tunable and high-performance photodetectors toward innovative optoelectronic applications.

GaS:WS2 Heterojunctions for Ultrathin Two-Dimensional Photodetectors with Large Linear Dynamic Range across Broad Wavelengths

Two-dimensional (2D) photodetectors based on photovoltaic effect or photogating effect can hardly achieve both high photoresponsivity and large linear dynamic range at the same time, which greatly limits many practical applications such as imaging sensors. Here, the conductive-sensitizer strategy, a general design for improving photoresponsivity and linear dynamic range in 2D photodetectors is provided and experimentally demonstrated on vertically stacked bilayer WS₂/GaS_0.87 under a parallel circuit mode. Owing to successful band alignment engineering, the isotype type-II heterojunction enables efficient charge carrier transfer from WS₂, the high-mobility sensitizer, to GaS_0.87, the low-mobility channel, under illumination from a broad visible spectrum. The transferred electron charges introduce a reverse electric field which efficiently lowers the band offset between the two materials, facilitating a transition from low-mobility photocarrier transport to high-mobility photocarrier transport with increasing illumination power. We achieved a large linear dynamic range of 73 dB as well as a high and constant photoresponsivity of 13 A/W under green light. X-ray photoelectron spectroscopy, cathodoluminescence, and Kelvin probe force microscopy further identify the key role of defects in monolayer GaS_0.87 in engineering the band alignment with monolayer WS₂. This work proposes a design route based on band and interface modulation for improving performance of 2D photodetectors and provides deep insights into the important role of strong interlayer coupling in offering heterostructures with desired properties and functions.

Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe2/ReSe2 van der Waals Heterostructure

Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III-V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a self-powered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe₂/ReSe₂ van der Waals heterostructure. The WSe₂/ReSe₂ heterojunction photodiode with semivertical geometry exhibits excellent performance: an ideality factor of 1.67, a broad spectral photoresponse of 405-980 nm with a significant photovoltaic effect, outstanding linearity with a linear dynamic range wider than 100 dB, and rapid photoswitching behavior with a cutoff frequency up to 100 kHz. Strongly polarized excitonic transitions around the band edge in ReSe₂ lead to significant 980 nm NIR linear-polarization-dependent photocurrent. This linear polarization sensitivity remains stable even after exposure to air for longer than five months. Furthermore, by leveraging the NIR (980 nm)-selective linear polarization detection of this photodiode under photovoltaic operation, we demonstrate digital incoherent holographic 3D imaging.

Vertically stacked Bi2Se3/MoTe2 heterostructure with large band offsets for nanoelectronics

In recent years, two-dimensional material-based tunneling heterojunctions are emerging as a multi-functional architecture for logic circuits and photodetection owing to the flexible stacking, optical sensitivity, tunable detection band, and highly controllable conductivity behaviors. However, the existing structures are mainly focused on transition or post-transition metal chalcogenides and have been rarely investigated as topological insulator (such as Bi₂Se₃ or Bi₂Te₃)-based tunneling heterostructures. Meanwhile, it is challenging to mechanically exfoliate the topological insulator thin nanoflakes because of the strong layer-by-layer interaction with shorter interlayer spacing. Herein, we report Au-assisted exfoliation and non-destructive transfer method to fabricate large-scale Bi₂Se₃ thin nanosheets. Furthermore, a novel broken-gap tunneling heterostructure is designed by combing 2H-MoTe₂ and Bi₂Se₃via the dry-transfer method. Thanks to the realized band alignment, this ambipolar-n device shows a clear rectifying behavior at V_ds of 1 V. A built-in potential exceeding ∼0.7 eV is verified owing to the large band offsets by comparing the numerical solution of Poisson's equation and the experimental data. Carrier transport is governed by the majority carrier including thermionic emission and the tunneling process through the barrier height. At last, the device shows an ultralow dark current of ∼0.2 pA and a superior optoelectrical performance of I_light/I_dark ratio ≈10⁶, a fast response time of 21 ms, and a specific detectivity of 7.2 × 10¹¹ Jones for a visible light of 405 nm under zero-bias. Our work demonstrates a new universal method to fabricate a topological insulator and paves a new strategy for the construction of novel van der Waals tunneling structures.

Unprecedentedly Uniform, Reliable, and Centimeter-Scale Molybdenum Disulfide Negative Differential Resistance Photodetectors

Negative differential resistance (NDR) can be applied to various devices such as reflection amplifiers, relaxation oscillators, and neuromorphic devices. However, the development of NDR photodetectors with uniformity, stability, and reproducibility for use in practical applications is still lacking. Herein, we demonstrate highly reliable NDR photodetectors by constructing a MoS₂/p-Si heterostructure. Owing to the formation of a MoS₂ layer with uniform thickness by the plasma-enhanced sulfurization process, a 100% yield with high uniformity (peak-to-valley ratio = 1.195 ± 0.065) was achieved for 120 devices. Furthermore, the proposed NDR photodetectors exhibit unprecedented high cycle-to-cycle endurance, which maintains their NDR characteristics through 100 000 consecutive sweeps without operational failure. This work paves the way for the development of a reliable NDR device and reports unprecedented results of high uniformity, reproducibility, and robustness for practical applications.

Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel

Very recently, stacked two-dimensional materials have been studied, focusing on the van der Waals interaction at their stack junction interface. Here, we report field effect transistors (FETs) with stacked transition metal dichalcogenide (TMD) channels, where the heterojunction interface between two TMDs appears useful for nonvolatile or neuromorphic memory FETs. A few nanometer-thin WSe₂ and MoTe₂ flakes are vertically stacked on the gate dielectric, and bottom p-MoTe₂ performs as a channel for hole transport. Interestingly, the WSe₂/MoTe₂ stack interface functions as a hole trapping site where traps behave in a nonvolatile manner, although trapping/detrapping can be controlled by gate voltage (V_GS). Memory retention after high V_GS pulse appears longer than 10000 s, and the Program/Erase ratio in a drain current is higher than 200. Moreover, the traps are delicately controllable even with small V_GS, which indicates that a neuromorphic memory is also possible with our heterojunction stack FETs. Our stack channel FET demonstrates neuromorphic memory behavior of ∼94% recognition accuracy.

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.

All 2D WSe2/MoS2 heterojunction photodiode and its image sensor application

Two-dimensional (2D) layered van der Waals atomic crystals exhibit many fascinating properties. In particular, their dangling-bond-free nature enables different 2D materials to be stacked on the top of each other without restraint, thereby forming a heterostructure. In this study, a high-performance all 2D WSe₂/MoS₂ heterojunction photodiode with a graphene contact as an electrode is demonstrated. It exhibits an excellent electrical performance (ideality factor of 1.2 and rectification ratio of 10⁴), a broad spectral photoresponse (from 450 to 980 nm), and a remarkable linearity with a linear dynamic range of 113 dB. Finally, a self-powered single pixel imager is demonstrated as a feasible optoelectronic application.