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Husremović S, Goodge BH, Erodici MP, Inzani K, Mier A, Ribet SM, Bustillo KC, Taniguchi T, Watanabe K, Ophus C, Griffin SM, Bediako DK. Encoding multistate charge order and chirality in endotaxial heterostructures. Nat Commun 2023; 14:6031. [PMID: 37758701 PMCID: PMC10533556 DOI: 10.1038/s41467-023-41780-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 09/16/2023] [Indexed: 09/29/2023] Open
Abstract
High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1T-TaS2 due to charge density wave (CDW) phase transitions. However, the metastability responsible for this behavior makes the presence of multistate switching unpredictable in TaS2 devices. Here, we demonstrate the fabrication of nanothick verti-lateral H-TaS2/1T-TaS2 heterostructures in which the number of endotaxial metallic H-TaS2 monolayers dictates the number of resistance transitions in 1T-TaS2 lamellae near room temperature. Further, we also observe optically active heterochirality in the CDW superlattice structure, which is modulated in concert with the resistivity steps, and we show how strain engineering can be used to nucleate these polytype conversions. This work positions the principle of endotaxial heterostructures as a promising conceptual framework for reliable, non-volatile, and multi-level switching of structure, chirality, and resistance.
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Affiliation(s)
- Samra Husremović
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA
| | - Berit H Goodge
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA
- Max-Planck-Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany
| | - Matthew P Erodici
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA
| | - Katherine Inzani
- School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
| | - Alberto Mier
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA
| | - Stephanie M Ribet
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- International Institute of Nanotechnology, Northwestern University, Evanston, IL, 60208, USA
| | - Karen C Bustillo
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Takashi Taniguchi
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Colin Ophus
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Sinéad M Griffin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - D Kwabena Bediako
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA.
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
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Scanning Probe Microscopy Investigation of Topological Defects. Symmetry (Basel) 2022. [DOI: 10.3390/sym14061098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023] Open
Abstract
Symmetry lowering phase transitions in ferroelectrics, magnets, and materials with various other forms of inherent order lead to the formation of topological defects. Their non-trivial real-space topology is characterized by a topological charge, which represents the topological invariant. The study of topological defects in such materials has seen increased interest over the last decade. Among the methods used for their study, scanning probe microscopy (SPM) with its many variants has provided valuable new insight into these structures at the nanoscale. In this perspective, various approaches are discussed, and different techniques are compared with regard to their ability to investigate topological defect properties.
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Huang Z, Song X, Chen Y, Yang H, Yuan P, Ma H, Qiao J, Zhang Y, Sun J, Zhang T, Huang Y, Liu L, Gao HJ, Wang Y. Size Dependence of Charge-Density-Wave Orders in Single-Layer NbSe 2 Hetero/Homophase Junctions. J Phys Chem Lett 2022; 13:1901-1907. [PMID: 35179388 DOI: 10.1021/acs.jpclett.1c04138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Controlling charge-density-wave (CDW) orders in two-dimensional (2D) crystals has attracted a great deal of interest because of their fundamental physics and their demand inse in miniaturized devices. In this work, we systematically studied the size-dependent CDW orders in single-layer hetero/homo-NbSe2 stacking junctions. We found that the CDW orders in the top 1T-NbSe2 layer of the junctions are highly dependent on its lateral size. For the 1T/2H-NbSe2 heterojunction, the critical lateral size of 1T-NbSe2 islands for the formation of well-defined CDW orders is ∼26 nm, whereas below 15 nm, the CDW orders melt. However, for the 1T/1T-NbSe2 homojunction, the CDW orders in the islands can persist even with a lateral size of <11 nm. Our findings illuminate the fresh phenomenon of size-dependent CDW orders existing in 2D van der Waals hetero/homojunctions and provide useful information for the control of CDW orders.
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Affiliation(s)
- Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Xuan Song
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Han Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Peiwen Yuan
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Hang Ma
- School of Automation, Beijing Information Science and Technology University, Beijing 100085, China
| | - Jingsi Qiao
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
- Centre for Advanced 2D Materials, National University of Singapore, 117546 Singapore
| | - Yu Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Jiatao Sun
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Teng Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yuan Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
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4
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Quantum billiards with correlated electrons confined in triangular transition metal dichalcogenide monolayer nanostructures. Nat Commun 2021; 12:3793. [PMID: 34145280 PMCID: PMC8213767 DOI: 10.1038/s41467-021-24073-0] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2021] [Accepted: 06/01/2021] [Indexed: 11/23/2022] Open
Abstract
Forcing systems through fast non-equilibrium phase transitions offers the opportunity to study new states of quantum matter that self-assemble in their wake. Here we study the quantum interference effects of correlated electrons confined in monolayer quantum nanostructures, created by femtosecond laser-induced quench through a first-order polytype structural transition in a layered transition-metal dichalcogenide material. Scanning tunnelling microscopy of the electrons confined within equilateral triangles, whose dimensions are a few crystal unit cells on the side, reveals that the trajectories are strongly modified from free-electron states both by electronic correlations and confinement. Comparison of experiments with theoretical predictions of strongly correlated electron behaviour reveals that the confining geometry destabilizes the Wigner/Mott crystal ground state, resulting in mixed itinerant and correlation-localized states intertwined on a length scale of 1 nm. The work opens the path toward understanding the quantum transport of electrons confined in atomic-scale monolayer structures based on correlated-electron-materials. Atomically precise nanostructures resulting from a laser-induced phase change offer a rich playground to study the interplay between confinement and correlations. Here, the authors report on quantum interference effects in equilateral triangles created by a laser-induced polytype phase transition in TaS2.
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Ravnik J, Diego M, Gerasimenko Y, Vaskivskyi Y, Vaskivskyi I, Mertelj T, Vodeb J, Mihailovic D. A time-domain phase diagram of metastable states in a charge ordered quantum material. Nat Commun 2021; 12:2323. [PMID: 33875669 PMCID: PMC8055663 DOI: 10.1038/s41467-021-22646-7] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/02/2020] [Accepted: 03/17/2021] [Indexed: 11/11/2022] Open
Abstract
Metastable self-organized electronic states in quantum materials are of fundamental importance, displaying emergent dynamical properties that may be used in new generations of sensors and memory devices. Such states are typically formed through phase transitions under non-equilibrium conditions and the final state is reached through processes that span a large range of timescales. Conventionally, phase diagrams of materials are thought of as static, without temporal evolution. However, many functional properties of materials arise as a result of complex temporal changes in the material occurring on different timescales. Hitherto, such properties were not considered within the context of a temporally-evolving phase diagram, even though, under non-equilibrium conditions, different phases typically evolve on different timescales. Here, by using time-resolved optical techniques and femtosecond-pulse-excited scanning tunneling microscopy (STM), we track the evolution of the metastable states in a material that has been of wide recent interest, the quasi-two-dimensional dichalcogenide 1T-TaS2. We map out its temporal phase diagram using the photon density and temperature as control parameters on timescales ranging from 10−12 to 103 s. The introduction of a time-domain axis in the phase diagram enables us to follow the evolution of metastable emergent states created by different phase transition mechanisms on different timescales, thus enabling comparison with theoretical predictions of the phase diagram, and opening the way to understanding of the complex ordering processes in metastable materials. Tracking the evolution of non-equilibrium phases requires measurements over a wide range of timescales. Here, using a combination of femtosecond spectroscopy and scanning tunneling microscopy, the authors map out a temporal phase diagram of metastable states in a charge-ordered material 1T-TaS2.
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Affiliation(s)
- Jan Ravnik
- Complex Matter Department, Jozef Stefan Institute, Ljubljana, Slovenia.,Laboratory for Micro and Nanotechnology, Paul Scherrer Institut, Villigen PSI, Switzerland
| | - Michele Diego
- Complex Matter Department, Jozef Stefan Institute, Ljubljana, Slovenia
| | - Yaroslav Gerasimenko
- Complex Matter Department, Jozef Stefan Institute, Ljubljana, Slovenia.,Center of Excellence on Nanoscience and Nanotechnology-Nanocenter (CENN Nanocenter), Ljubljana, Slovenia
| | | | - Igor Vaskivskyi
- Complex Matter Department, Jozef Stefan Institute, Ljubljana, Slovenia.,Center of Excellence on Nanoscience and Nanotechnology-Nanocenter (CENN Nanocenter), Ljubljana, Slovenia
| | - Tomaz Mertelj
- Complex Matter Department, Jozef Stefan Institute, Ljubljana, Slovenia.,Center of Excellence on Nanoscience and Nanotechnology-Nanocenter (CENN Nanocenter), Ljubljana, Slovenia
| | - Jaka Vodeb
- Complex Matter Department, Jozef Stefan Institute, Ljubljana, Slovenia
| | - Dragan Mihailovic
- Complex Matter Department, Jozef Stefan Institute, Ljubljana, Slovenia. .,Center of Excellence on Nanoscience and Nanotechnology-Nanocenter (CENN Nanocenter), Ljubljana, Slovenia. .,Department of Physics, Faculty of Mathematics and Physics, University of Ljubljana, Ljubljana, Slovenia.
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6
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Shen S, Shao B, Wen C, Yuan X, Gao J, Nie Z, Luo X, Huang B, Sun Y, Meng S, Yan S. Single-water-dipole-layer-driven Reversible Charge Order Transition in 1 T-TaS 2. NANO LETTERS 2020; 20:8854-8860. [PMID: 33170704 DOI: 10.1021/acs.nanolett.0c03857] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Water-solid interactions are crucial for many fundamental phenomena and technological processes. Here, we report a scanning tunneling microscopy study about the charge density wave (CDW) transition in 1T-TaS2 driven by a single water dipole layer. At low temperature, pristine 1T-TaS2 is a prototypical CDW compound with 13 × 13 charge order. After growing a highly ordered water adlayer, a new charge order with 3 × 3 periodicity emerges on water-covered 1T-TaS2. After water desorption, the entire 1T-TaS2 surface appears as localized 13 × 13 CDW domains that are separated by residual-water-cluster-pinned CDW domain walls. First-principles calculations show that the electric dipole moments in the water adlayer attract electrons to the top layer of 1T-TaS2, which shifts the phonon softening mode and induces the 13 × 13 to 3 × 3 charge order transition. Our results pave the way for creating new collective quantum states of matter with a molecular dipole layer.
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Affiliation(s)
- Shiwei Shen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Bin Shao
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518109, China
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Chenhaoping Wen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Xiaoqiu Yuan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Jingjing Gao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - Zhengwei Nie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xuan Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Yuping Sun
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shichao Yan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
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